JP2867390B2 - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JP2867390B2 JP2867390B2 JP63262059A JP26205988A JP2867390B2 JP 2867390 B2 JP2867390 B2 JP 2867390B2 JP 63262059 A JP63262059 A JP 63262059A JP 26205988 A JP26205988 A JP 26205988A JP 2867390 B2 JP2867390 B2 JP 2867390B2
- Authority
- JP
- Japan
- Prior art keywords
- recording
- erasing
- recording layer
- recording medium
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 title claims description 23
- 239000000203 mixture Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 11
- 229910052787 antimony Inorganic materials 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 229910052714 tellurium Inorganic materials 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 40
- 239000010409 thin film Substances 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 5
- 229910001370 Se alloy Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910004284 Te81Ge15Sb2S2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 231100000053 low toxicity Toxicity 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24308—Metals or metalloids transition metal elements of group 11 (Cu, Ag, Au)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25715—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B7/2572—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of organic materials
- G11B7/2575—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of organic materials resins
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、光情報記録媒体に関するものであり、さら
に詳しくは光によって情報の記録、再生、書き換えが可
能な光カード、光ディスクなどの光記録媒体に関するも
のである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical information recording medium, and more particularly, to an optical recording medium such as an optical card and an optical disk which can record, reproduce and rewrite information by light. It is about media.
従来、非晶状態と結晶状態の2つの状態間の可逆的な
転移により記録、消去を行なう光記録媒体としては、Te
を主成分とするTe81Ge15Sb2S2薄膜を記録層とたもの
(特開昭47−26897号公報)、Teを主成分とするTe80Sb1
0Se10膜を記録層としたもの(特開昭61−145737号公
報、SPIE Vol.529 p2)、Sb2Se等の組成のSb−Se合金を
記録層とするもの(特開昭60−155495号公報、Appl.Phy
s.lett.48(19),12 May 1986)、Te低酸化物を主成分
とする薄膜を記録層とするもの(特開昭59−185048号公
報)、またTeを主成分とするGe 2Sb 2Te 5合金を記録層
としたもの(Jpn.J,Appl.Phys.Vol.26(1987)Suppl.26
−4 p61−)がある。これらの記録層をディスク基板上
に形成した光ディスクが従来知られているが、最近、カ
ード状の光記録媒体(光カード)が携帯性に優れること
から、注目されている。Conventionally, as an optical recording medium that performs recording and erasing by reversible transition between two states of an amorphous state and a crystalline state, Te is used.
A recording layer made of a thin film of Te81Ge15Sb2S2 mainly composed of Te80Sb1 and a thin film of Te80Sb1 mainly composed of Te
0Se10 film what was the recording layer (JP 61-145737 discloses, SPIE Vol.529 p2), which the Sb-Se alloy compositions, such as Sb 2 Se and recording layer (JP-A-60-155495 Gazette, Appl.Phy
48 (19), 12 May 1986), a thin film mainly composed of a low oxide of Te as a recording layer (JP-A-59-185048), and Ge 2 Sb mainly composed of Te. Recording layer made of 2Te5 alloy (Jpn.J, Appl.Phys.Vol.26 (1987) Suppl.26
-4 p61-). An optical disk having these recording layers formed on a disk substrate has been conventionally known, but recently, a card-shaped optical recording medium (optical card) has attracted attention because of its excellent portability.
[発明が解決しようとする課題] しかしながら、上記従来技術の場合、次のような問題
があった。[Problems to be solved by the invention] However, in the case of the above-mentioned conventional technology, there are the following problems.
すなわち、Te81Ge15Sb2S2薄膜を記録層としたもの
は、光による熱的な記録、消去の繰返しを行なう場合、
繰返しにともない記録特性が著しく低下する欠点があっ
た。In other words, when the recording layer is a Te81Ge15Sb2S2 thin film, thermal recording by light, when repeating erasing,
There was a drawback that the recording characteristics were remarkably reduced with repetition.
また、Te80Sb10Se10膜を記録層としたもの、およびSb
2Se等の組成のSb−Se合金を記録層とするものでは、以
下の問題があった。すなわち、Te80Sb10Se10膜などのTe
−Sb−Se合金膜では、レーザービームによる記録消去に
20μsec程度の時間を要し、消去速度が遅く実用性に欠
けていた。一方、Sb2Se等の組成のSb−Se合金を記録層
とするものは、記録、消去を繰返すとノイズが急激に増
加し記録信号の品位が低下する問題があった。また毒性
の高いSeを含有するため光カードなどの民生用途では使
用上の危険をともなう欠点があった。Further, a recording layer of a Te80Sb10Se10 film, and Sb
A recording layer made of a Sb-Se alloy having a composition such as 2Se has the following problems. That is, a Te80Sb10Se10 film or the like
-For Sb-Se alloy film, recording and erasing by laser beam
A time of about 20 μsec was required, and the erasing speed was slow and lacked practicality. On the other hand, when the recording layer is made of an Sb—Se alloy having a composition such as Sb 2 Se, there is a problem that when recording and erasing are repeated, noise sharply increases and the quality of a recording signal deteriorates. In addition, since it contains highly toxic Se, it has a drawback in that there is a danger in use in consumer applications such as optical cards.
Te低酸化物を記録層とするものでは、記録、消去の繰
返しにともない熱的安定性が低下する欠点があった。さ
らにGe 2Sb 2Te 5を記録層としたものでは、記録時の光
ビーム走査速度が遅い場合に、記録層に変形が発生し易
いという欠点があり、光カードのような低速度で記録、
消去する媒体には適していなかった。In the case where the recording layer is made of a low oxide of Te, there is a disadvantage that the thermal stability is reduced as recording and erasing are repeated. Further, in the case of using Ge 2 Sb 2 Te 5 as a recording layer, when the light beam scanning speed at the time of recording is low, there is a disadvantage that the recording layer is easily deformed, and recording at a low speed like an optical card,
Not suitable for erasing media.
本発明はかかる問題点を改善し、低パワーの半導体レ
ーザで記録、消去の多数回の繰返しの後も劣化が少な
く、比較的低速の光ビーム走査速度でも安定に記録可能
であり、かつ熱的安定性も良好で毒性の低い光記録媒体
を提供することを目的とする。The present invention solves such a problem, and the recording and erasing with a low-power semiconductor laser are less likely to be deteriorated even after a large number of repetitions of erasing, recording can be performed stably even at a relatively low light beam scanning speed, and thermal An object of the present invention is to provide an optical recording medium having good stability and low toxicity.
かかる本発明の目的は、基板上に形成された記録層に
光を照射することによって、情報の記録、消去および再
生が可能であり、情報の記録および消去が、結晶状態と
非晶状態の間の相変化により行なわれる光記録媒体にお
いて、前記記録層が銅(Cu)、アンチモン(Sb)および
テルル(Te)の3元素を含有し、かつその組成が下記一
般式で表わされることを特徴とする光記録媒体により達
成される。An object of the present invention is to record, erase, and reproduce information by irradiating a recording layer formed on a substrate with light, and to record and erase information between a crystalline state and an amorphous state. Wherein the recording layer contains three elements of copper (Cu), antimony (Sb) and tellurium (Te), and the composition is represented by the following general formula: This is achieved by an optical recording medium.
CuxSbyTe(100-x-y) ただし、5≦x≦20 40≦y≦55 x、yおよび(100−x−y)は記録層中のそれぞれC
u、SbおよびTeの原子%を示す。Cu x Sby y Te (100-xy) where 5 ≦ x ≦ 20 40 ≦ y ≦ 55 x, y and (100-xy) are each C in the recording layer.
Indicates the atomic% of u, Sb and Te.
記録層の成分であるCuは、記録層の非晶状態の熱安定
化を高め、かつ非晶相の形成を容易にして比較的長い記
録パルスあるいは遅い光ビーム走査速度によっても非晶
化記録を可能にする効果を有する。Cu, a component of the recording layer, enhances the thermal stabilization of the amorphous state of the recording layer and facilitates the formation of the amorphous phase, enabling amorphous recording even with a relatively long recording pulse or a slow light beam scanning speed. Has the effect of enabling.
また、記録層の含有するSbとTeは、記録層の主成分で
あり、前記一般式で表わされる組成の範囲において、安
定な非晶質状態を形成可能とするとともに、非晶相と結
晶相の光の反射率、透過率の差を大きくし、再生信号の
コントラストを改善する効果を有する。これらCu、Sbお
よびSbの3元素からなる本発明の記録層は、前記一般式
の組成範囲において、多数回の記録、消去の繰返し動作
においても安定した記録、消去特性を示す。Further, Sb and Te contained in the recording layer are the main components of the recording layer, and can form a stable amorphous state within the range of the composition represented by the general formula, and have an amorphous phase and a crystalline phase. Has the effect of increasing the difference between the reflectance and the transmittance of the light and improving the contrast of the reproduced signal. The recording layer of the present invention composed of these three elements of Cu, Sb and Sb exhibits stable recording and erasing characteristics even in a repeated recording and erasing operation many times in the composition range of the general formula.
前記記録層の組成の一般式において、Cuの含有量xが
20原子%より大きい場合には、記録、消去の可逆性が悪
化する。また非晶化による記録も困難になる。一方、5
原子%より小さい場合には結晶化速度が低く、熱安定性
が悪化する。In the general formula of the composition of the recording layer, the content x of Cu is
If it exceeds 20 atomic%, the reversibility of recording and erasing deteriorates. In addition, recording by amorphization becomes difficult. 5
If it is less than atomic%, the crystallization rate is low, and the thermal stability is deteriorated.
前記記録層の組成の一般式において、Sbの含有量y
が、55原子%より大きい場合には、記録、消去の可逆性
が低下し実用的ではない。また40原子%より小さい場合
には結晶化温度が低くなり、熱安定性が低下するととも
に記録、消去の繰返しの可逆性も悪化する。In the general formula of the composition of the recording layer, the Sb content y
However, if it is more than 55 atomic%, the reversibility of recording and erasing is reduced, which is not practical. If it is less than 40 atomic%, the crystallization temperature is lowered, the thermal stability is reduced, and the reversibility of repeated recording and erasing is also deteriorated.
前記記録層の組成の一般式において、Teの含有量(10
0−x−y)が55原子%より大きい場合には、結晶化温
度が低下し、熱安定性が悪くなる。一方25原子%より小
さい場合には記録、消去動作の可逆性が悪化する。In the general formula of the composition of the recording layer, the content of Te (10
If 0-xy) is greater than 55 atomic%, the crystallization temperature decreases and the thermal stability deteriorates. On the other hand, if it is less than 25 atomic%, the reversibility of the recording and erasing operations is deteriorated.
本発明の記録層は、厚さ10nm〜150nm、特に高い感度
を得るためには、50nm以上120nm以下とすることが好ま
しい。The thickness of the recording layer of the present invention is preferably from 10 nm to 150 nm, and particularly preferably from 50 nm to 120 nm in order to obtain particularly high sensitivity.
また、本発明の記録層に隣接して、保護層を積層して
もよい。この場合には、記録時の記録層の変形が起りに
くく、記録の消去、書き換えの回数を改善することがで
きる。前記の保護層としては、SiO2などの無機薄膜、ポ
リイミド樹脂などの耐熱性高分子薄膜などが好ましい。
特に、Si、Ge、Ti、Zrなどの金属の酸化物薄膜およびZn
Sなどの亜鉛のカルコゲナイド薄膜が、耐熱性が高いこ
と、記録層の酸化を防止できることから好ましい。Further, a protective layer may be laminated adjacent to the recording layer of the present invention. In this case, the recording layer hardly deforms during recording, and the number of times of erasing and rewriting of the recording can be improved. As the protective layer, an inorganic thin film such as SiO 2 or a heat-resistant polymer thin film such as a polyimide resin is preferable.
In particular, oxide thin films of metals such as Si, Ge, Ti, and Zr and Zn
A chalcogenide thin film of zinc such as S is preferable because it has high heat resistance and can prevent oxidation of the recording layer.
本発明に用いられる基板としては、プラスチック、ガ
ラス、アルミニウムなど従来の記録媒体と同様なもので
よい。収束光により基板側から記録することによってご
みの影響を避ける目的からは、基板として透明材料を用
いることが好ましい。上記のような材料としては、ポリ
エチレンテレフタレート、ポリメチルメタクリレート、
ポリカーボネイト、エポキシ樹脂、ポリオレフィン樹
脂、ポリイミド樹脂およびガラス等が好ましい。さらに
好ましくは、複屈折が小さいこと、形成が容易であるこ
とから、ポリカーボネイト、エポキシ樹脂がよい。基板
の厚さは、特に限定するものではないが、10ミクロン以
上、5ミリメートル以下が実用的である。10ミクロン未
満では基板側から収束光で記録する場合でもごみの影響
を受けやすくなり、5ミリメートルを越える場合には、
収束光で記録する場合、対物レンズの開口数を大きくす
ることができなくなり、ピットサイズが大きくなるため
記録密度を上げることが困難になる。The substrate used in the present invention may be the same as a conventional recording medium such as plastic, glass, and aluminum. For the purpose of avoiding the influence of dust by recording from the substrate side with convergent light, it is preferable to use a transparent material for the substrate. Materials such as the above, polyethylene terephthalate, polymethyl methacrylate,
Polycarbonate, epoxy resin, polyolefin resin, polyimide resin, glass and the like are preferred. More preferably, polycarbonate and epoxy resin are preferable because of low birefringence and easy formation. Although the thickness of the substrate is not particularly limited, it is practically 10 μm or more and 5 mm or less. If it is less than 10 microns, it is easily affected by dust even when recording with convergent light from the substrate side.
When recording with convergent light, the numerical aperture of the objective lens cannot be increased and the pit size increases, making it difficult to increase the recording density.
基板はフレキシブルなものであってもよいし、リジッ
ドなものであっても良い。フレキシブルな基板は、テー
プ状、あるいはシート状で用いることができる。リジッ
トな基板は、カード状、あるいは円形ディスク状で用い
ることができる。また必要に応じて、2枚の基板を用い
てエアーサンドイッチ構造、エアーインシデント構造、
密着張り合わせ構造などとすることもできる。The substrate may be flexible or rigid. The flexible substrate can be used in a tape shape or a sheet shape. The rigid substrate can be used in the form of a card or a circular disk. In addition, if necessary, an air sandwich structure, an air incident structure using two substrates,
It is also possible to use a close bonding structure.
本発明の光記録媒体の記録に用いる光としては、レー
ザ光やストロボ光のごとき光であり、とりわけ、半導体
レーザを用いることは、光源が小型でかつ、消費電力が
小さく、変調が容易であることから好ましい。The light used for recording on the optical recording medium of the present invention is light such as laser light or strobe light. In particular, the use of a semiconductor laser has a small light source, low power consumption, and easy modulation. This is preferred.
記録層および保護層は、スパッタ法、抵抗加熱蒸着
法、電子ビーム加熱蒸着法およびイオンプレーティング
法などの真空中での薄膜形成法により形成することがで
きる。特に、スパッタ法は、欠陥の少ない記録層、保護
層を形成できることから好ましい。The recording layer and the protective layer can be formed by a thin film forming method in a vacuum such as a sputtering method, a resistance heating evaporation method, an electron beam heating evaporation method, and an ion plating method. In particular, a sputtering method is preferable because a recording layer and a protective layer with few defects can be formed.
記録は、結晶状態の記録層をレーザ光照射により非晶
化マークを形成して行なうことができる。また非晶質状
態の記録層にレーザ光照射により結晶化マークを形成し
て行なうこともできる。また、消去は記録と同様にレー
ザ光を照射することによって、非晶化マークを結晶化す
るか、結晶化マークを非晶化して行なうことができる。Recording can be performed by forming an amorphous mark on the crystalline recording layer by irradiating a laser beam. Alternatively, the crystallization mark may be formed by irradiating a laser beam on the amorphous recording layer. Erasing can be performed by irradiating a laser beam as in the case of recording to crystallize the amorphous mark or to amorphousize the crystallized mark.
結晶状態の記録層にレーザ光照射により非晶化マーク
を形成して記録を行ない、消去をレーザ光照射により非
晶化マークを結晶化して行なうことが、記録密度を高く
でき、記録層の変形が起こり難いことから好ましい。By forming an amorphous mark on a crystalline recording layer by irradiating a laser beam to perform recording and erasing by crystallization of the amorphous mark by irradiating the laser beam, the recording density can be increased, and the recording layer can be deformed. Is preferable because it hardly occurs.
[実施例] 以下、本発明を実施例に基づいて具体的に説明する
が、本発明はこれらに限定されない。EXAMPLES Hereinafter, the present invention will be specifically described based on Examples, but the present invention is not limited thereto.
なお実施例中の記録層の組成は、ICP発光分析(セイ
コー電子工業(株)製FTS−1100型)によって確認し
た。The composition of the recording layer in the examples was confirmed by ICP emission analysis (FTS-1100, manufactured by Seiko Instruments Inc.).
実施例1 スパッタ法により7×10-1PaのArガス雰囲気中で、厚
さ1.1mmのガラス基板上に100nmのSiO2保護膜を形成し、
さらにCu、SbおよびTeを水晶振動膜厚計でモニタしなが
ら同時スパッタしてCu9Sb50Te41の元素組成比の厚さ100
nmの記録層を形成した。さらに該記録層上に150nmのSiO
2保護層を形成し、本発明の光記録媒体を構成した。Example 1 A 100 nm SiO 2 protective film was formed on a 1.1 mm thick glass substrate in an Ar gas atmosphere of 7 × 10 -1 Pa by sputtering.
Further, Cu, Sb and Te are simultaneously sputtered while being monitored by a quartz vibrating film thickness meter, and the thickness of the element composition ratio of Cu9Sb50Te41 is 100
An nm recording layer was formed. Further, 150 nm of SiO
(2) Two protective layers were formed to constitute the optical recording medium of the present invention.
この光記録媒体を静止状態で、基板側から開口数0.5
の対物レンズで集光した波長830nmの半導体レーザビー
ムを照射し記録、消去を行なった。記録パルスは、膜面
13mW、1μsec、消去パルスは4.7mW、1.5μsec、再生光
は、0.5mWとした。With this optical recording medium stationary, a numerical aperture of 0.5 from the substrate side
Recording and erasing were performed by irradiating a semiconductor laser beam having a wavelength of 830 nm collected by an objective lens. The recording pulse is applied to the film surface
13 mW, 1 μsec, the erase pulse was 4.7 mW, 1.5 μsec, and the reproduction light was 0.5 mW.
非晶化記録後と消去後(結晶状態)の反射率差は、消
去状態の反射率の約20%と大きく、良好な記録状態が確
認できた。この条件で10万回の記録、消去サイクルを繰
返した後も記録状態と消去状態の反射率差は殆ど変化が
見られず、特性の劣化はなかった。The difference in reflectance between the non-crystallized recording and the erased (crystal state) was as large as about 20% of the reflectance in the erased state, and a favorable recording state was confirmed. Even after the recording and erasing cycles were repeated 100,000 times under these conditions, the difference in reflectance between the recorded state and the erased state hardly changed, and the characteristics did not deteriorate.
また、この記録層の結晶化温度を昇温時の直流電気抵
抗の変化から測定したところ、10゜/分の昇温条件で13
5℃であった。従って、常温での熱的安定性は良好であ
ると推定できる。When the crystallization temperature of this recording layer was measured from the change in DC electric resistance at the time of temperature rise, the crystallization temperature was 13 ° C./min.
5 ° C. Therefore, it can be estimated that the thermal stability at room temperature is good.
実施例2 実施例1の記録層の組成をCu16Sb43Te41とした他は、
実施例1と同様にして光記録媒体を製作し、同様な方法
で記録消去を行なった。その結果、実施例1とほぼ同様
に10万回の記録、消去繰返し後も安定に作動した。Example 2 Except that the composition of the recording layer of Example 1 was changed to Cu16Sb43Te41,
An optical recording medium was manufactured in the same manner as in Example 1, and recording and erasing were performed in the same manner. As a result, the operation was stable even after 100,000 times of recording and erasing were repeated, almost in the same manner as in Example 1.
比較例1 実施例1において、記録層の組成を下記(イ)、
(ロ)に変更した以外は実施例1と同様にして光記録媒
体をそれぞれ作製し、同様に評価した。Comparative Example 1 In Example 1, the composition of the recording layer was changed to the following (A)
Optical recording media were produced in the same manner as in Example 1 except for changing to (B), and evaluated in the same manner.
(イ)Cu22Sb33Te55 (ロ)Cu13Sb30Te57 (イ)の組成の場合には実施例1と同様の光学系で記
録、消去を試みたところ記録、消去の繰返しが困難であ
った。(ロ)の組成の場合には4000回程度の記録、消去
の繰返しの後、記録、消去動作が困難になった。In the case of (a) Cu22Sb33Te55 (b) Cu13Sb30Te57 (a), when recording and erasing were attempted using the same optical system as in Example 1, it was difficult to repeat recording and erasing. In the case of the composition (b), the recording and erasing operations became difficult after about 4,000 repetitions of recording and erasing.
[発明の効果] 本発明は、光記録媒体の記録層をCu、SbおよびTeから
なる特定の組成で構成したので、次のごとき優れた効果
を奏するものである。[Effects of the Invention] In the present invention, since the recording layer of the optical recording medium is constituted by a specific composition comprising Cu, Sb and Te, the following excellent effects can be obtained.
(1) 1μsec程度の長い記録光照射でも容易に非晶
化記録が可能であり、かつ2μsec程度の高速消去が可
能であるため、光カードなどの低速度移動媒体に適す
る。(1) Amorphous recording can be easily performed even with irradiation of recording light as long as about 1 μsec, and high-speed erasing can be performed at about 2 μsec. Therefore, it is suitable for a low-speed moving medium such as an optical card.
(2) 多数回の記録、消去を繰返しても動作が安定し
ており、記録感度の低下、再生信号強度の低下およびノ
イズの増大などの記録特性の劣化が少ない。(2) The operation is stable even when recording and erasing are repeated many times, and there is little deterioration in recording characteristics such as a decrease in recording sensitivity, a decrease in reproduction signal intensity, and an increase in noise.
(3) 転移温度が高く、熱安定性に優れる。(3) High transition temperature and excellent thermal stability.
(4) 低出力の半導体レーザにより記録、消去可能で
あり感度が高い。(4) Recording and erasing can be performed with a low-output semiconductor laser, and the sensitivity is high.
(5) SeおよびTlなどを含有していないため毒性が低
く、安全性が高い。(5) Since it does not contain Se and Tl, it has low toxicity and high safety.
フロントページの続き (58)調査した分野(Int.Cl.6,DB名) B41M 5/26Continuation of front page (58) Field surveyed (Int.Cl. 6 , DB name) B41M 5/26
Claims (1)
ことによって、情報の記録、消去および再生が可能であ
り、情報の記録および消去が、結晶状態と非晶状態の間
の相変化により行なわれる光記録媒体において、前記記
録層が銅(Cu)、アンチモン(Sb)およびテルル(Te)
の3元素を含有し、かつその組成が下記一般式で表わさ
れることを特徴とする光記録媒体。 CuxSbyTe(100-x-y) ただし、5≦x≦20 40≦y≦55 x、yおよび(100−x−y)は記録層中のそれぞれC
u、SbおよびTeの原子%を示す。An information recording, erasing and reproducing operation can be performed by irradiating a recording layer formed on a substrate with light, and information recording and erasing can be performed in a phase between a crystalline state and an amorphous state. In an optical recording medium performed by change, the recording layer is made of copper (Cu), antimony (Sb) and tellurium (Te).
An optical recording medium comprising the following three elements and having a composition represented by the following general formula: Cu x Sby y Te (100-xy) where 5 ≦ x ≦ 20 40 ≦ y ≦ 55 x, y and (100-xy) are each C in the recording layer.
Indicates the atomic% of u, Sb and Te.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63262059A JP2867390B2 (en) | 1988-10-18 | 1988-10-18 | Optical recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63262059A JP2867390B2 (en) | 1988-10-18 | 1988-10-18 | Optical recording medium |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02107478A JPH02107478A (en) | 1990-04-19 |
JP2867390B2 true JP2867390B2 (en) | 1999-03-08 |
Family
ID=17370459
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63262059A Expired - Lifetime JP2867390B2 (en) | 1988-10-18 | 1988-10-18 | Optical recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2867390B2 (en) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63154786A (en) * | 1986-12-19 | 1988-06-28 | Hitachi Ltd | Phosphor |
-
1988
- 1988-10-18 JP JP63262059A patent/JP2867390B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH02107478A (en) | 1990-04-19 |
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