JP2842710B2 - Circuit board - Google Patents
Circuit boardInfo
- Publication number
- JP2842710B2 JP2842710B2 JP3175624A JP17562491A JP2842710B2 JP 2842710 B2 JP2842710 B2 JP 2842710B2 JP 3175624 A JP3175624 A JP 3175624A JP 17562491 A JP17562491 A JP 17562491A JP 2842710 B2 JP2842710 B2 JP 2842710B2
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- metal layer
- circuit
- intermediate metal
- circuit conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は混成集積回路装置等に使
用される回路基板に関し、より詳細には内部にタングス
テン(W) 、モリブデン(Mo)、マンガン(Mn)等の高融点金
属粉末から成る配線導体を、外表面に銅(Cu)から成る回
路導体を有する回路基板の改良に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit board used for a hybrid integrated circuit device or the like, and more particularly to a circuit board containing a high melting point metal powder such as tungsten (W), molybdenum (Mo), and manganese (Mn). The present invention relates to an improvement of a circuit board having a wiring conductor made of copper (Cu) on the outer surface.
【０００２】[0002]
【従来の技術】従来、半導体素子等の能動部品や抵抗
器、コンデンサ等の受動部品を多数搭載し、所定の電子
回路を構成するようになした混成集積回路装置は、通
常、内部にタングステン(W) 、モリブデン(Mo)、マンガ
ン(Mn)等の高融点金属から成る配線導体を埋設した絶縁
基体の外表面に銅(Cu)から成る回路導体をその一部が前
記配線導体と接続するようにして被着させた構造の回路
基板を準備し、次に前記回路基板の表面に半導体素子や
コンデンサ、抵抗器等を載置させるとともに各々の電極
端子を回路導体に半田(Sn-Pb合金) 等を介し接合させる
ことによって形成されている。2. Description of the Related Art Conventionally, a hybrid integrated circuit device which mounts a large number of active components such as a semiconductor element and a plurality of passive components such as a resistor and a capacitor to form a predetermined electronic circuit usually has a tungsten (Tungsten) inside. W), a circuit conductor made of copper (Cu) is partially connected to the wiring conductor on the outer surface of an insulating base in which a wiring conductor made of a high melting point metal such as molybdenum (Mo) or manganese (Mn) is embedded. Prepare a circuit board having a structure adhered in the following manner, and then place a semiconductor element, a capacitor, a resistor, etc. on the surface of the circuit board and solder each electrode terminal to a circuit conductor (Sn-Pb alloy) It is formed by joining through such as.
【０００３】尚、かかる従来の混成集積回路装置等に使
用される回路基板は一般にセラミックスの積層技術及び
スクリーン印刷等の厚膜技術を採用することによって製
作されており、具体的には以下の方法によって製作され
る。A circuit board used in such a conventional hybrid integrated circuit device is generally manufactured by employing a ceramic laminating technique and a thick film technique such as screen printing. Produced by
【０００４】即ち、まず、アルミナ(Al 2 O 3 ) 、シ
リカ(SiO2 ) 、マグネシア(MgO) 、カルシア(CaO) 等の
電気絶縁性に優れたセラミックス原料粉末に有機溶剤、
溶媒を添加混合して複数枚のセラミック生シートを得る
とともに該各セラミック生シートの上下面にタングステ
ン、モリブデン、マンガン等の高融点金属粉末から成る
導電ペーストを従来周知のスクリーン印刷等の厚膜手法
を採用することによって所定パターンに印刷塗布する。[0004] First, an organic solvent is added to a ceramic raw material powder such as alumina (Al 2 O 3 ), silica (SiO 2 ), magnesia (MgO), and calcia (CaO) which has excellent electrical insulation properties.
A solvent is added and mixed to obtain a plurality of ceramic raw sheets, and a conductive paste made of a high melting point metal powder such as tungsten, molybdenum, manganese or the like is formed on the upper and lower surfaces of each ceramic raw sheet by a conventionally known thick film method such as screen printing. Is applied in a predetermined pattern by printing.
【０００５】次に前記各セラミック生シートを積層
し、積層体を得るとともにこれを約1500℃の温度で焼成
し、内部及び表面にタングステン、モリブデン、マンガ
ン等の高融点金属から成る配線導体を有する絶縁基体を
得る。Next, the respective ceramic green sheets are laminated to obtain a laminate, which is fired at a temperature of about 1500 ° C., and has a wiring conductor made of a refractory metal such as tungsten, molybdenum, manganese or the like inside and on the surface. Obtain an insulating substrate.
【０００６】そして最後に前記絶縁基体の外表面に、
銅(Cu)粉末に有機溶剤、溶媒を添加混合して得た銅ペー
ストを従来周知のスクリーン印刷法によりその一部が前
記配線導体と接続するようにして塗布させるとともにこ
れを中性雰囲気( 窒素雰囲気)中、約900 ℃の温度で焼
成し、銅粉末を絶縁基体及び配線導体上に被着させるこ
とによって製品としての回路基板となる。Finally, on the outer surface of the insulating substrate,
A copper paste obtained by adding and mixing an organic solvent and a solvent to copper (Cu) powder is applied by a well-known screen printing method so that a part of the copper paste is connected to the wiring conductor, and the paste is applied to a neutral atmosphere (nitrogen atmosphere). (Atmosphere) at a temperature of about 900 ° C., and a copper powder is deposited on the insulating substrate and the wiring conductor to obtain a circuit board as a product.
【０００７】しかしながら、この従来の回路基板は配線
導体を形成するタングステン、モリブデン、マンガン等
と回路導体を形成する銅との濡れ性( 反応性) が悪いこ
とから配線導体の一部に回路導体を被着させたとしても
両者の密着性は悪く、その結果、配線導体と回路導体と
の間の電気的導通が極めて悪いという欠点を有してい
た。However, the conventional circuit board has poor wettability (reactivity) between tungsten, molybdenum, manganese, etc. forming the wiring conductor and copper forming the circuit conductor. Even if they are applied, the adhesion between them is poor, and as a result, there is a drawback that the electrical conduction between the wiring conductor and the circuit conductor is extremely poor.
【０００８】そこで上記欠点に鑑み、配線導体の外表面
で回路導体が接触する部位にタングステン、モリブデ
ン、マンガン及び銅と濡れ性（反応性) の良いニッケル
を中間金属層として層着介在させ、配線導体と回路導体
との密着性を向上させることが提案されている( 特開昭
58 30194 号参照) 。In view of the above drawbacks, nickel, which has good wettability (reactivity) with tungsten, molybdenum, manganese, and copper, is interposed as an intermediate metal layer on the outer surface of the wiring conductor where the circuit conductor comes into contact. It has been proposed to improve the adhesion between the conductor and the circuit conductor (see
58 30194).
【０００９】[0009]
【発明が解決しようとする課題】しかしながら、上記回
路基板においては銅ペーストを約800 ℃の温度で焼成
し、回路導体を配線導体上に中間金属層を間に挟んで被
着させる際、回路導体を形成する銅と中間金属層を形成
するニッケルとの間に相互拡散が起こり、回路導体の銅
の一部が濡れ性( 反応性) の悪いタングステン、モリブ
デン等から成る配線導体に直接接触して配線導体と回路
導体の密着性が劣化し、同時に両者間の電気的導通が被
着後は良好なものの温度サイクル等の熱ストレスが印加
されると配線導体と回路導体の熱膨張係数の差に起因し
て大きく低下してしまうという欠点を有していた。However, in the above-mentioned circuit board, when the copper paste is fired at a temperature of about 800 ° C. and the circuit conductor is applied on the wiring conductor with an intermediate metal layer interposed therebetween, Inter-diffusion occurs between the copper that forms the metal and the nickel that forms the intermediate metal layer, and some of the copper in the circuit conductor directly contacts the wiring conductor made of tungsten, molybdenum, etc., which has poor wettability (reactivity). The adhesion between the wiring conductor and the circuit conductor deteriorates, and at the same time, the electrical conduction between the two is good, but when thermal stress such as a temperature cycle is applied, the difference in the thermal expansion coefficient between the wiring conductor and the circuit conductor is reduced. This has the drawback that it is greatly reduced.
【００１０】[0010]
【課題を解決するための手段】本発明はタングステン、
モリブデン、マンガンの少なくとも１種から成る配線導
体を設けた絶縁基体の外表面に、銅から成る回路導体を
その一部が前記配線導体と接触するようにして被着させ
た回路基板において、前記配線導体と回路導体との接触
部に、ニッケルに0.1 乃至30.0重量％のタングステンと
0.01乃至10.0重量％のコバルトと0.01乃至20.0重量％の
リンを含有させた中間金属層を介在することを特徴とす
るものである。SUMMARY OF THE INVENTION The present invention is directed to tungsten,
In a circuit board, a circuit conductor made of copper is adhered on an outer surface of an insulating base provided with a wiring conductor made of at least one of molybdenum and manganese so that a part of the circuit conductor comes into contact with the wiring conductor. 0.1 to 30.0% by weight of tungsten in nickel at the contact between the conductor and the circuit conductor
The present invention is characterized in that an intermediate metal layer containing 0.01 to 10.0% by weight of cobalt and 0.01 to 20.0% by weight of phosphorus is interposed.
【００１１】[0011]
【実施例】次に本発明を添付図面に基づき詳細に説明す
る。図１は本発明の回路基板を説明するための一部拡大
断面図であり、1 は電気絶縁性の材料から成る絶縁基体
である。BRIEF DESCRIPTION OF THE DRAWINGS FIG. FIG. 1 is a partially enlarged sectional view for explaining a circuit board of the present invention, and 1 is an insulating base made of an electrically insulating material.
【００１２】前記絶縁基体1 は、例えばアルミナセラミ
ックス等の電気絶縁材料から成り、アルミナ(Al 2 O
3 ) 、シリカ(SiO2 ) 、マグネシア(MgO) 、カルシア
(CaO) 等のセラミックス原料粉末に有機溶剤、溶媒を添
加混合して泥漿状となすとともにこれをドクターブレー
ド法を採用することによってセラミック生シートを得、
しかる後、前記セラミック生シートに適当な穴あけ加工
を施すとともに複数枚積層し、還元雰囲気中、約1500℃
の温度で焼成することによって製作される。[0012] The insulating substrate 1 is made of, for example, electrically insulating material alumina ceramics, alumina (Al 2 O
3 ), silica (SiO 2 ), magnesia (MgO), calcia
An organic solvent is added to a ceramic raw material powder such as (CaO), a solvent is added and mixed to form a slurry, and a ceramic raw sheet is obtained by employing a doctor blade method,
Thereafter, the ceramic green sheet is subjected to an appropriate drilling process and a plurality of the sheets are laminated, and in a reducing atmosphere, about 1500 ° C.
It is manufactured by firing at a temperature of
【００１３】また前記絶縁基体1 にはその内部から上面
に導出する配線導体2 が設けてあり、該配線導体2 はタ
ングステン、モリブデン、マンガンの少なくとも1 種よ
り形成されている。The insulating base 1 is provided with a wiring conductor 2 extending from the inside to the upper surface, and the wiring conductor 2 is formed of at least one of tungsten, molybdenum, and manganese.
【００１４】前記配線導体2 はタングテン、モリブデ
ン、マンガンの粉末に有機溶剤、溶媒を添加混合して導
体ペーストを作り、該導体ペーストを前記セラミック生
シートの上下面にスクリーン印刷等により所定パターン
に印刷塗布させておくことによって絶縁基体1 の内部及
び表面に被着形成される。The wiring conductor 2 is prepared by adding and mixing an organic solvent and a solvent to powder of tungsten, molybdenum, and manganese to form a conductor paste, and printing the conductor paste on the upper and lower surfaces of the ceramic green sheet in a predetermined pattern by screen printing or the like. By being applied, it is adhered to the inside and the surface of the insulating base 1.
【００１５】前記配線導体2 はその露出外表面で少なく
とも後述する回路導体4 が被着される部位に中間金属層
3 が被着形成されており、該中間金属層3 は配線導体2
の露出外表面に電解メッキ、無電解メッキ等のメッキ法
や従来周知の厚膜手法により被着形成される。The wiring conductor 2 has an intermediate metal layer on its exposed outer surface at least at a portion where a circuit conductor 4 to be described later is attached.
3 is formed, and the intermediate metal layer 3 is
Is formed on the exposed outer surface by a plating method such as electrolytic plating or electroless plating or a conventionally known thick film method.
【００１６】前記中間金属層3 はニッケルに0.1 乃至3
0.0重量％のタングステンと0.01乃至10.0重量％のコバ
ルトと0.01乃至20.0重量％のリンを含有させたものから
成り、且つ中間金属層3 は配線導体2 と回路導体４の両
方に濡れ性( 反応性) が良く、配線導体2 上に回路導体
4 を被着させた場合、両者は密着して両者間の電気的導
通を極めて優れたものとなす。The intermediate metal layer 3 has a thickness of 0.1 to 3 on nickel.
The intermediate metal layer 3 contains 0.0% by weight of tungsten, 0.01 to 10.0% by weight of cobalt, and 0.01 to 20.0% by weight of phosphorus, and the intermediate metal layer 3 has wettability (reactivity) for both the wiring conductor 2 and the circuit conductor 4. ) Is good, and the circuit conductor
When 4 is adhered, the two adhere to each other and make the electrical conduction between them extremely excellent.
【００１７】前記中間金属層3 を構成するニッケルに含
有されるタングステンはニッケルと銅の相互拡散を抑制
する材料であり、配線導体2 上に中間金属層3 を間に挟
んで回路導体4 を被着させたとしても回路導体4 の銅の
一部が中間金属層3 を拡散して配線導体2 に直接接触す
ることは一切なく、これによって配線導体2 と回路導体
4 との密着性を完全なものなし、両者の電気的導通を極
めて良いものとなすことができる。Tungsten contained in nickel constituting the intermediate metal layer 3 is a material for suppressing mutual diffusion of nickel and copper, and the circuit conductor 4 is covered on the wiring conductor 2 with the intermediate metal layer 3 interposed therebetween. Even if it is attached, a part of the copper of the circuit conductor 4 does not diffuse into the intermediate metal layer 3 and directly contact the wiring conductor 2 at all, so that the wiring conductor 2 and the circuit conductor
4 and the electrical conductivity between them can be made extremely good.
【００１８】尚、前記中間金属層3 を構成するニッケル
に含有されるタングステンはその含有量が0.1 重量％未
満であると銅の拡散の抑制効果が弱まり、回路導体4 を
構成する銅の一部が中間金属層3 内を拡散して配線導体
2 に直接接触し、配線導体2と回路導体4 との密着性を
劣化させてしまい、また含有量が30.0重量％を越えると
中間金属層3 と回路導体4 との濡れ性( 反応性) が悪く
なり、回路導体4 を配線導体2 に密着性良く被着させる
ことができなくなる。従って、中間金属層3 を構成する
ニッケルに含有されるタングステンはその含有量が0.1
乃至30.0重量％の範囲に特定される。If the content of tungsten contained in the nickel constituting the intermediate metal layer 3 is less than 0.1% by weight, the effect of suppressing the diffusion of copper is weakened, and a part of the copper constituting the circuit conductor 4 is reduced. Is diffused in the intermediate metal layer 3 and
2 and directly deteriorates the adhesion between the wiring conductor 2 and the circuit conductor 4. If the content exceeds 30.0% by weight, the wettability (reactivity) between the intermediate metal layer 3 and the circuit conductor 4 is reduced. As a result, the circuit conductor 4 cannot be adhered to the wiring conductor 2 with good adhesion. Therefore, the content of tungsten contained in the nickel constituting the intermediate metal layer 3 is 0.1%.
To 30.0% by weight.
【００１９】また前記中間金属層3 を構成するニッケル
に含有されるコバルトはニッケルと銅の相互拡散を抑制
するとともに中間金属層3 と回路導体4 と被着強度を向
上させるための材料であり、配線導体2 上に中間金属層
3 を間に挟んで回路導体4 を被着させた際、回路導体4
の銅の一部が中間金属層3 を拡散して配線導体2 に直接
接触することは一切なく、配線導体2 と回路導体4 との
密着性をより完全なものとして両者の電気的導通を極め
て良いものとなすことができる。Cobalt contained in nickel constituting the intermediate metal layer 3 is a material for suppressing mutual diffusion of nickel and copper and improving the adhesion strength between the intermediate metal layer 3 and the circuit conductor 4. Intermediate metal layer on wiring conductor 2
When the circuit conductor 4 is attached with the
Part of the copper does not diffuse into the intermediate metal layer 3 and does not directly contact the wiring conductor 2, so that the adhesion between the wiring conductor 2 and the circuit conductor 4 is made more complete and the electrical continuity between them is extremely high. It can be good.
【００２０】尚、前記中間金属層3 を構成するニッケル
に含有されるコバルトはその含有量が0.01重量％未満で
あると銅の拡散の抑制効果が弱まり、回路導体4 を構成
する銅の一部が中間金属層3 内を拡散して配線導体2 に
直接接触し、配線導体2 と回路導体4 との密着性を劣化
させてしまい、また含有量が10.0重量％を越えると中間
金属層3 が硬く、脆くなり、温度サイクル等の熱ストレ
スが印加されるとクラックを発生して配線導体2 と回路
導体4 との電気的導通が悪くなってしまう。従って、中
間金属層3 を構成するニッケルに含有されるコバルトは
その含有量が0.01乃至10.0重量％の範囲に特定される。If the content of cobalt contained in the nickel constituting the intermediate metal layer 3 is less than 0.01% by weight, the effect of suppressing the diffusion of copper is weakened, and a part of the copper constituting the circuit conductor 4 is reduced. Diffuses inside the intermediate metal layer 3 and directly contacts the wiring conductor 2, deteriorating the adhesion between the wiring conductor 2 and the circuit conductor 4, and if the content exceeds 10.0% by weight, the intermediate metal layer 3 When it becomes hard and brittle, and a thermal stress such as a temperature cycle is applied, a crack is generated, and electrical conduction between the wiring conductor 2 and the circuit conductor 4 is deteriorated. Therefore, the content of cobalt contained in the nickel constituting the intermediate metal layer 3 is specified in the range of 0.01 to 10.0% by weight.
【００２１】更に前記中間金属層3 を構成するニッケル
に含有されるリンは中間金属層3 表面に酸化物膜が形成
されるのを抑制する材料であり、配線導体2 上に中間金
属層3 を間に挟んで回路導体4 を被着させたとしても中
間金属層3 表面に酸化物膜が形成されて中間金属層3 と
回路導体4 の密着性が劣化することは一切なく、これに
よって配線導体2 と回路導体4 との密着性をより完全な
ものとなし、両者の電気的導通を極めて良いもとなすこ
とができる。Further, the phosphorus contained in the nickel constituting the intermediate metal layer 3 is a material that suppresses the formation of an oxide film on the surface of the intermediate metal layer 3, and the intermediate metal layer 3 is formed on the wiring conductor 2. Even if the circuit conductor 4 is adhered between them, an oxide film is not formed on the surface of the intermediate metal layer 3 and the adhesion between the intermediate metal layer 3 and the circuit conductor 4 does not deteriorate at all. The adhesion between the circuit conductor 2 and the circuit conductor 4 can be made more perfect, and the electrical continuity between the two can be made very good.
【００２２】尚、前記中間金属層3 を構成するニッケル
に含有されるリンはその含有量が0.01重量％未満である
と中間金属層3 表面に酸化物膜が形成されるのを抑制す
る効果が弱まり、中間金属層3 と回路導体4 との密着性
が悪くなって配線導体2 と回路導体4 との密着性を劣化
させてしまい、また含有量が20.0重量％を越えると中間
金属層3 が硬く、脆くなり、温度サイクル等の熱ストレ
スが印加されるとクラックを発生して配線導体2 と回路
導体4 との電気的導通が悪くなってしまう。従って、中
間金属層3 を構成するニッケルに含有されるリンはその
含有量が0.01乃至20.0重量％の範囲に特定される。If the content of phosphorus contained in the nickel constituting the intermediate metal layer 3 is less than 0.01% by weight, the effect of suppressing the formation of an oxide film on the surface of the intermediate metal layer 3 is reduced. When the content exceeds 20.0% by weight, the intermediate metal layer 3 may be weakened, and the adhesion between the intermediate metal layer 3 and the circuit conductor 4 may be deteriorated, thereby deteriorating the adhesion between the wiring conductor 2 and the circuit conductor 4. When it becomes hard and brittle, and a thermal stress such as a temperature cycle is applied, a crack is generated, and electrical conduction between the wiring conductor 2 and the circuit conductor 4 is deteriorated. Therefore, the content of phosphorus contained in nickel constituting the intermediate metal layer 3 is specified in the range of 0.01 to 20.0% by weight.
【００２３】更にまた前記中間金属層3 はその厚みが0.
1 μm未満であると回路導体4 を形成する銅の拡散を完
全に防止することができず、回路導体4 の一部が中間金
属層3 を拡散して配線導体2 に直接接触し、配線導体2
と回路導体4 との密着性が劣化する傾向にあり、また1
0.0μm を越えると中間金属層3 に内部応力によるクラ
ックが発生し、回路導体4 の一部が中間金属層3 のクラ
ックを介して配線導体2に直接接触し、配線導体2 と回
路導体4との密着性が劣化する傾向にあることから中間
金属層3 の厚みは0.1 乃至10.0μm の範囲としてくこと
が好ましい。Further, the intermediate metal layer 3 has a thickness of 0.1 mm.
If the thickness is less than 1 μm, the diffusion of copper forming the circuit conductor 4 cannot be completely prevented, and a part of the circuit conductor 4 diffuses through the intermediate metal layer 3 and directly contacts the wiring conductor 2 to form a wiring conductor. Two
And the circuit conductor 4 tends to deteriorate.
If the thickness exceeds 0.0 μm, a crack occurs due to internal stress in the intermediate metal layer 3, and a part of the circuit conductor 4 directly contacts the wiring conductor 2 via the crack in the intermediate metal layer 3, and the wiring conductor 2 and the circuit conductor 4 It is preferable that the thickness of the intermediate metal layer 3 be in the range of 0.1 to 10.0 μm because the adhesion of the intermediate metal layer tends to deteriorate.
【００２４】前記配線導体2 に被着させた中間金属層3
の外表面及び絶縁基体1 の外表面には銅から成る回路導
体4 が被着されており、該回路導体4 には半導体素子等
の能動部品や抵抗器、コンデンサ等の受動部品の各電極
端子が接続される。The intermediate metal layer 3 attached to the wiring conductor 2
A circuit conductor 4 made of copper is adhered to the outer surface of the substrate and the outer surface of the insulating base 1, and the circuit conductor 4 has electrode terminals of active components such as semiconductor elements and passive components such as resistors and capacitors. Is connected.
【００２５】前記回路導体4 は銅の粉末にガラス粉末と
有機溶剤、溶媒とを添加混合して金属ペーストを作り、
該金属ペーストをその一部が配線導体2 に被着させた中
間金属層3 と接触するようにして絶縁基体1 の外表面に
印刷塗布し、しかる後、これを中性雰囲気中、約800 ℃
の温度で焼成することによって絶縁基体1 の外表面に被
着される。The circuit conductor 4 is made by adding a glass powder, an organic solvent, and a solvent to copper powder and mixing them to form a metal paste.
The metal paste is applied on the outer surface of the insulating substrate 1 by printing so that a part of the metal paste comes into contact with the intermediate metal layer 3 adhered to the wiring conductor 2, and then the resultant is put in a neutral atmosphere at about 800 ° C.
By baking at the above temperature, the insulating substrate 1 is adhered to the outer surface.
【００２６】尚、この場合、配線導体2 の外表面には回
路導体4 が拡散し難く、回路導体4と濡れ性( 反応性)
の良い中間金属層3 が介在されているため配線導体2 に
回路導体4 を密着性よく、且つ両者の電気的導通を良好
として被着させることができる。In this case, it is difficult for the circuit conductor 4 to spread on the outer surface of the wiring conductor 2, so that the circuit conductor 4 is wettable (reactive) with the circuit conductor 4.
Since the good intermediate metal layer 3 is interposed, the circuit conductor 4 can be adhered to the wiring conductor 2 with good adhesion and good electrical continuity between them.
【００２７】また前記回路導体4 はそれに含まれるリン
が酸化を抑止する作用を有しているため焼成雰囲気中に
酸素が多量に含まれていても表面に酸化物膜が形成され
ることは殆どなく、その結果、回路導体4 に半導体素子
や抵抗器等を半田を介して強固に接合させることも可能
となる。Since the circuit conductor 4 has a function of suppressing oxidation of phosphorus contained in the circuit conductor 4, even if a large amount of oxygen is contained in the firing atmosphere, an oxide film is hardly formed on the surface. As a result, a semiconductor element, a resistor, and the like can be firmly joined to the circuit conductor 4 via solder.
【００２８】更に前記回路導体4 に含まれるガラスは、
例えばPbO 、B 2 O 3 、SiO 2 、Al2 O 3 、Na2 O 、K
2 O 、CaO 、ZnO 等から成り、その添加量が0.2 重量％
未満であると回路導体4 を絶縁基体1 に強固に被着させ
るのが困難となる傾向にあり、また8.0 重量％を越える
と回路導体4 の半田濡れ性( 反応性) が劣化し、回路導
体4 に半導体素子や抵抗器等を半田を介し強固に接合さ
せるのが困難となる傾向にある。従って、回路導体4 に
添加含有されるガラスはその添加量を0.2 乃至8.0 重量
％の範囲としておくことが好ましい。Further, the glass contained in the circuit conductor 4 is as follows:
For example PbO, B 2 O 3, SiO 2, Al 2 O 3, Na 2 O, K
2 O, CaO, ZnO, etc., the amount of addition is 0.2% by weight
If the amount is less than 10%, it tends to be difficult to firmly attach the circuit conductor 4 to the insulating base 1. If the amount exceeds 8.0% by weight, the solder wettability (reactivity) of the circuit conductor 4 deteriorates, and the circuit conductor 4 deteriorates. 4) It tends to be difficult to firmly join semiconductor elements, resistors, etc. via solder. Therefore, it is preferable that the amount of glass added to the circuit conductor 4 be in the range of 0.2 to 8.0% by weight.
【００２９】かくしてこの回路基板はその表面に半導体
素子や抵抗器、コンデンサ等が載置され、該半導体素子
等を回路導体に半田を介し接合させることによって混成
集積回路装置となる。Thus, the circuit board has a semiconductor element, a resistor, a capacitor, and the like mounted on the surface thereof, and the semiconductor element and the like are joined to circuit conductors via solder to form a hybrid integrated circuit device.
【００３０】尚、本発明は上述の実施例に限定されるも
のではなく、本発明の要旨を逸脱しない範囲であれば種
々の変更は可能であり、例えば回路導体4の外表面に金
(Au)から成る被覆層を0.1 乃至5.0 μm の厚みに層着さ
せておくと回路導体4 の酸化腐食を有効に防止するとと
もに半導体素子や抵抗器、コンデンサ等の電極端子を回
路導体4 により強固に接合させることができる。The present invention is not limited to the above-described embodiment, and various modifications are possible without departing from the scope of the present invention.
If a coating layer made of (Au) is applied to a thickness of 0.1 to 5.0 μm, oxidation corrosion of the circuit conductor 4 is effectively prevented, and the electrode terminals of semiconductor elements, resistors, capacitors, etc. are more firmly connected to the circuit conductor 4. Can be joined.
【００３１】また回路導体4 の外表面にニッケル(Ni)、
鉄(Fe)、マンガン(Mn)の少なくとも1 種を主成分とする
被覆層を0.2 乃至12.0μm の厚みに層着させておくと該
被覆層が回路導体4 に半導体素子やコンデンサ等の電極
端子を半田を介して接合させる際、回路導体4 と半田と
の濡れ性を改善し、回路導体4 に半導体素子やコンデン
サ等の電極端子を強固に接合させることができる。The outer surface of the circuit conductor 4 has nickel (Ni),
If a coating layer containing at least one of iron (Fe) and manganese (Mn) as a main component is applied to a thickness of 0.2 to 12.0 μm, the coating layer is applied to the circuit conductor 4 so that electrode terminals of a semiconductor element, a capacitor or the like can be formed. When soldering is performed via solder, the wettability between the circuit conductor 4 and the solder is improved, and electrode terminals such as semiconductor elements and capacitors can be firmly joined to the circuit conductor 4.
【００３２】(実験例)次に本発明の作用効果を以下に述
べる実験例に基づき説明する。(Experimental Example) Next, the operation and effect of the present invention will be described based on the following experimental examples.
【００３３】実験例１ まずアルミナ(Al 2 O 3 ) を主成分とするセラミック生
シートの上面にタングステンの粉末から成る金属ペース
トを印刷塗布し、幅1.0mm 、長さ10.0mmのパターンを一
対、その先端の間隔を5.0mm として20対被着させ、しか
る後、これを還元雰囲気中、約1500℃の温度で焼成し、
アルミナ質焼結体から成る絶縁基体に配線導体を形成す
る。次に前記絶縁基体の配線導体表面にニッケル99.4重
量％、タングステン0.5 重量％、コバルト0.05重量％、
リン0.05重量％から成る中間金属層をメッキにより２μ
m の厚みに被着させるとともに前記一対の配線導体間に
銅(Cu)ペーストを厚み約30μm に印刷するとともにこれ
を中性雰囲気中、約800 ℃の温度で焼成し、回路導体を
形成する。尚、銅ペーストの配線導体への接触は配線導
体の先端1.0mm に銅ペーストが接触するようにした。そ
して最後に前記一対の配線導体間の初期電気抵抗値及び
−65〜＋150 ℃の温度サイクルテストを100 サイクル実
施した後の電気抵抗値を測定し、その変化率( 増加率)
を求めるとともに平均値を算出して平均増加率の大きさ
を配線導体と回路導体の電気的導通の評価とした。その
結果、平均増加率は1.4%と小さく、配線導体と回路導体
の電気的導通が極めて良いことが判る。 EXPERIMENTAL EXAMPLE 1 First, a metal paste composed of tungsten powder was printed on the upper surface of a ceramic green sheet mainly composed of alumina (Al 2 O 3 ), and a pair of patterns having a width of 1.0 mm and a length of 10.0 mm was formed. The distance between the tips was 5.0 mm and 20 pairs were adhered. Thereafter, this was fired at a temperature of about 1500 ° C. in a reducing atmosphere,
A wiring conductor is formed on an insulating substrate made of an alumina sintered body. Next, 99.4% by weight of nickel, 0.5% by weight of tungsten, 0.05% by weight of cobalt,
Plating an intermediate metal layer consisting of 0.05% by weight of phosphorus
and a copper (Cu) paste is printed to a thickness of about 30 μm between the pair of wiring conductors and fired at a temperature of about 800 ° C. in a neutral atmosphere to form circuit conductors. The copper paste was brought into contact with the wiring conductor such that the copper paste was in contact with the tip 1.0 mm of the wiring conductor. Finally, the initial electrical resistance between the pair of wiring conductors and the electrical resistance after 100 cycles of a temperature cycle test at −65 to + 150 ° C. are measured, and the rate of change (increase rate) is measured.
And the average value was calculated, and the magnitude of the average increase rate was evaluated for the electrical continuity between the wiring conductor and the circuit conductor. As a result, the average increase rate was as small as 1.4%, indicating that the electrical conduction between the wiring conductor and the circuit conductor was extremely good.
【００３４】実験例２ 実験例１の中間金属層をニッケル70.0重量％、タングス
テン15.0重量％、コバルト5.0 重量％、リン10.0重量％
で形成するとともに厚みを３μm とし、実験例１と同様
の方法によって配線導体間の電気抵抗の平均増加率を測
定した。その結果、平均増加率は1.3%と小さく、配線導
体と回路導体の電気的導通が極めて良いことが判る。 EXPERIMENTAL EXAMPLE 2 The intermediate metal layer of Experimental Example 1 was composed of 70.0% by weight of nickel, 15.0% by weight of tungsten, 5.0% by weight of cobalt and 10.0% by weight of phosphorus.
The thickness was set to 3 μm, and the average increase rate of the electric resistance between the wiring conductors was measured in the same manner as in Experimental Example 1. As a result, the average increase rate was as small as 1.3%, indicating that the electrical conduction between the wiring conductor and the circuit conductor was extremely good.
【００３５】実験例３ 実験例１の中間金属層をニッケル52.0重量％、タングス
テン25.0重量％、コバルト8.0 重量％、リン15.0重量％
で形成するとともに厚みを３μm とし、実験例１と同様
の方法によって配線導体間の電気抵抗の平均増加率を測
定した。その結果、平均増加率は1.2%と小さく、配線導
体と回路導体の電気的導通が極めて良いことが判る。 EXPERIMENTAL EXAMPLE 3 The intermediate metal layer of Experimental Example 1 was composed of 52.0% by weight of nickel, 25.0% by weight of tungsten, 8.0% by weight of cobalt and 15.0% by weight of phosphorus.
The thickness was set to 3 μm, and the average increase rate of the electric resistance between the wiring conductors was measured in the same manner as in Experimental Example 1. As a result, the average rate of increase was as small as 1.2%, indicating that the electrical conduction between the wiring conductor and the circuit conductor was extremely good.
【００３６】比較例 実験例１の中間金属層を純ニッケルで形成するとともに
厚みを３μm とし、実験例１と同様の方法によって配線
導体間の電気抵抗の平均増加率を測定した。その結果、
平均増加率は10.0% と大きく、配線導体と回路導体の電
気的導通が悪いことが判る。[0036] The intermediate metal layer of Comparative Example Experimental Example 1 and 3μm thick while forming with pure nickel were measured an average increase rate of the electrical resistance between the wiring conductors by the same method as Experimental Example 1. as a result,
The average increase rate is as large as 10.0%, which indicates that the electrical conduction between the wiring conductor and the circuit conductor is poor.
【００３７】[0037]
【発明の効果】本発明の回路基板によれば配線導体と回
路導体との間に、ニッケルに0.1 乃至30.0重量％のタン
グステンと0.01乃至10.0重量％のコバルトと0.01乃至2
0.0重量％のリンを含有させた中間金属層を介在させた
ことから配線導体と回路導体とを両者間の電気的導通を
良好として密着性良く被着させることができ、混成集積
回路装置等に使用される回路基板として極めて有用であ
る。According to the circuit board of the present invention, 0.1 to 30.0% by weight of tungsten and 0.01 to 10.0% by weight of cobalt and 0.01 to 2% by weight of nickel are provided between the wiring conductor and the circuit conductor.
Since the intermediate metal layer containing 0.0% by weight of phosphorus is interposed, the wiring conductor and the circuit conductor have good electrical continuity between them, and can be adhered with good adhesion. It is extremely useful as a circuit board to be used.
【図１】本発明にかかる回路基板を説明するための一部
拡大断面図である。FIG. 1 is a partially enlarged cross-sectional view for explaining a circuit board according to the present invention.
１・・・絶縁基体 ２・・・配線導体 ３・・・中間金属層 ４・・・回路導体 DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Wiring conductor 3 ... Intermediate metal layer 4 ... Circuit conductor
フロントページの続き (56)参考文献 特開 昭59−117189（ＪＰ，Ａ) 特開 昭61−236192（ＪＰ，Ａ) 特開 昭63−144554（ＪＰ，Ａ) 特開 平１−209783（ＪＰ，Ａ) 特公 昭63−42879（ＪＰ，Ｂ２) (58)調査した分野(Int.Cl.6，ＤＢ名) H05K 1/09,3/10 - 3/26 H05K 3/38,3/46Continuation of the front page (56) References JP-A-59-117189 (JP, A) JP-A-61-236192 (JP, A) JP-A-63-144554 (JP, A) JP-A-1-209783 (JP) , A) JP-B 63-42879 (JP, B2) (58) Fields investigated (Int. Cl. 6 , DB name) H05K 1 / 09,3 / 10-3/26 H05K 3 / 38,3 / 46
Claims (1)
なくとも１種から成る配線導体を設けた絶縁基体の外表
面に、銅から成る回路導体をその一部が前記配線導体と
接触するようにして被着させた回路基板において、前記
配線導体と回路導体との接触部に、ニッケルに0.1 乃至
30.0重量％のタングステンと0.01乃至10.0重量％のコバ
ルトと0.01乃至20.0重量％のリンを含有させた中間金属
層を介在することを特徴とする回路基板。1. A circuit conductor made of copper is adhered to an outer surface of an insulating substrate provided with a wiring conductor made of at least one of tungsten, molybdenum, and manganese so that a part of the circuit conductor comes into contact with the wiring conductor. In the circuit board, the contact portion between the wiring conductor and the circuit conductor has a thickness of 0.1 to
A circuit board comprising an intermediate metal layer containing 30.0% by weight of tungsten, 0.01 to 10.0% by weight of cobalt, and 0.01 to 20.0% by weight of phosphorus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3175624A JP2842710B2 (en) | 1991-07-16 | 1991-07-16 | Circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3175624A JP2842710B2 (en) | 1991-07-16 | 1991-07-16 | Circuit board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0521920A JPH0521920A (en) | 1993-01-29 |
| JP2842710B2 true JP2842710B2 (en) | 1999-01-06 |
Family
ID=15999343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3175624A Expired - Fee Related JP2842710B2 (en) | 1991-07-16 | 1991-07-16 | Circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2842710B2 (en) |
-
1991
- 1991-07-16 JP JP3175624A patent/JP2842710B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0521920A (en) | 1993-01-29 |
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