JP2835329B2 - Semiconductor element sealing method - Google Patents
Semiconductor element sealing methodInfo
- Publication number
- JP2835329B2 JP2835329B2 JP25985890A JP25985890A JP2835329B2 JP 2835329 B2 JP2835329 B2 JP 2835329B2 JP 25985890 A JP25985890 A JP 25985890A JP 25985890 A JP25985890 A JP 25985890A JP 2835329 B2 JP2835329 B2 JP 2835329B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- application
- dispenser
- semiconductor element
- sealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、基板に実装された半導体素子の封止方法に
関するものである。Description: TECHNICAL FIELD The present invention relates to a method for sealing a semiconductor element mounted on a substrate.
［従来の技術］ 従来より、基板に半導体を取り付け封止を行なう場
合、基板のパターン面に半導体素子を実装し、この半導
体素子の周囲にシリコーン樹脂等のぬれ性の低い撥水性
樹脂からなる流出防止壁を形成し、この流出防止壁によ
り区画された封止領域内に封止材を注入して硬化させる
方法がある（特開平１−300531号公報に開示）。そし
て、流出防止壁を形成する際には、ディスペンサを基板
に近接するように下降させ低ぬれ性の樹脂の塗布を開始
すると同時にディスペンサと基板とが相対的な水平移動
を開始し、当該樹脂を塗布しながら水平移動を続け、封
止領域の外周を一周して塗布開始点に到達すると水平移
動を停止し、それと同時に樹脂の塗布の停止、ディスペ
ンサの上昇を行なう。[Prior art] Conventionally, when a semiconductor is mounted on a substrate and sealed, a semiconductor element is mounted on a pattern surface of the substrate, and an outflow made of a water-repellent resin having low wettability such as silicone resin around the semiconductor element. There is a method of forming a prevention wall, injecting a sealing material into a sealing region defined by the outflow prevention wall, and curing the sealing material (disclosed in Japanese Patent Application Laid-Open No. 1-300531). Then, when forming the outflow prevention wall, the dispenser is lowered so as to be close to the substrate to start application of the low wettability resin, and at the same time, the dispenser and the substrate start relative horizontal movement, and the resin is removed. The horizontal movement is continued while the coating is being performed, and the horizontal movement is stopped when the coating start point is reached around the periphery of the sealing area, and at the same time, the application of the resin is stopped and the dispenser is raised.
［解決しようとする課題］ 上記従来の方法では、基板とディスペンサとが相対的
に水平移動を開始すると同時に低ぬれ性樹脂の塗布を開
始しているが、移動開始直後は、移動速度が遅いため塗
布する樹脂が多くなり、この部分の流出防止壁の幅が広
くなってしまう。同様に、移動停止と同時に低ぬれ性樹
脂の塗布を停止するために、この時に塗布された樹脂の
幅も広くなってしまう。従って、移動開始点において樹
脂の継ぎ目が部分的に幅広になり、一定の幅の滑らかな
流出防止壁を形成することは困難である。また、低ぬれ
性樹脂の塗布の停止とほとんど同時にディスペンサを上
昇させているため、樹脂が上方へ糸を引くような形で形
成され、流出防止壁の高さが不均一になってしまう。[Problem to be Solved] In the above-described conventional method, the application of the low-wettability resin is started at the same time when the substrate and the dispenser start relatively moving horizontally. The amount of resin to be applied increases, and the width of the outflow prevention wall in this portion increases. Similarly, since the application of the low wettability resin is stopped at the same time as the movement is stopped, the width of the resin applied at this time is also increased. Therefore, the seam of the resin is partially widened at the movement start point, and it is difficult to form a smooth outflow prevention wall having a constant width. In addition, since the dispenser is raised almost simultaneously with the stoppage of the application of the low wettability resin, the resin is formed in such a manner as to draw a thread upward, and the height of the outflow prevention wall becomes uneven.
そこで本発明の目的は、幅および高さの均一な流出防
止壁を形成することが可能な半導体素子の封止方法を提
供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to provide a method for sealing a semiconductor element capable of forming an outflow prevention wall having a uniform width and height.
［課題を解決するための手段］ 本発明に係る半導体素子の封止方法は、基板のパター
ン面に半導体素子を実装する第１工程と、基板に半導体
素子の封止領域を区画するようにぬれ性の低い樹脂を塗
布し、当該樹脂を硬化させることによって流出防止壁を
形成する第２工程と、流出防止壁によって区画された封
止領域内に封止材を注入し硬化させる第３工程とを含ん
でいる。そして、第２工程において、低ぬれ性樹脂の塗
布は、まず基板に近接するようにディスペンサが下降
し、次に基板とディスペンサとが相対的に水平移動を開
始し、水平移動が定常速度に到達した後低ぬれ性樹脂の
塗布を開始し、樹脂を塗布しながら水平移動を続け封止
領域の外周を一周して塗布開始点に戻ってから樹脂の塗
布を停止し、次いで塗布開始点を行き過ぎた後で水平移
動を停止し、ディスペンサを上昇させて行なうことを特
徴とするものである。[Means for Solving the Problems] In a method for sealing a semiconductor element according to the present invention, a first step of mounting a semiconductor element on a pattern surface of a substrate and wet so as to partition a sealing region of the semiconductor element on the substrate. A second step of forming an outflow prevention wall by applying a resin having low water resistance and curing the resin, and a third step of injecting and hardening a sealing material into a sealing region defined by the outflow prevention wall. Contains. In the second step, the low-wettability resin is applied by first lowering the dispenser so as to approach the substrate, and then starting the horizontal movement relatively between the substrate and the dispenser, and the horizontal movement reaches a steady speed. After that, start application of the low wettability resin, continue horizontal movement while applying the resin, return to the application start point after making a round of the outer periphery of the sealing area, stop applying the resin, and then go too far past the application start point After that, the horizontal movement is stopped and the dispenser is raised to perform the horizontal movement.
［作用］ 本発明の半導体素子の封止方法によると、ディスペン
サと基板とが相対的に水平移動開始し定常速度に到達し
た後に低ぬれ性樹脂の塗布を開始するため、塗布開始時
の樹脂の幅が広くなることがない。また、樹脂の塗布停
止後も水平移動を続けるため、塗布停止時の樹脂の幅が
広くなることもない。そして、塗布停止後しばらく水平
運動を行なってからディスペンサを上昇させるため、低
ぬれ性樹脂の上方への糸引きが少なくなる。[Operation] According to the method of sealing a semiconductor element of the present invention, the dispenser and the substrate start to move horizontally relative to each other and start application of the low-wettability resin after reaching a steady speed. It does not become wider. In addition, since the horizontal movement is continued even after the application of the resin is stopped, the width of the resin when the application is stopped does not increase. Then, since the dispenser is raised after performing horizontal movement for a while after the application is stopped, stringing upward of the low wettability resin is reduced.
［実施例］ 本発明に係る半導体素子の封止方法について図面を参
照して説明する。Example A method for sealing a semiconductor device according to the present invention will be described with reference to the drawings.
まず第１工程として、第１図に示すように、配線パタ
ーン1aが形成されているプリント基板１上に、半導体素
子（ICチップ）２を、ダイボンディングなどの方法で実
装する。そして、金線等のワイヤ３によりワイヤボンデ
ィングする。なお、プリント基板１は図示しないXYテー
ブル上に載置されており、基板１の上方の初期位置にデ
ィスペンサ４が位置している。First, as a first step, as shown in FIG. 1, a semiconductor element (IC chip) 2 is mounted on a printed board 1 on which a wiring pattern 1a is formed by a method such as die bonding. Then, wire bonding is performed with a wire 3 such as a gold wire. The printed board 1 is placed on an XY table (not shown), and a dispenser 4 is located at an initial position above the board 1.
次に第２〜７図により流出防止壁の形成工程（第２工
程）を説明する。まず、第２図に示すように、ディスペ
ンサ４を上記の初期位置からプリント基板１に近接する
ように下降させる。そして、XYテーブルによりプリント
基板１を移動させる。このとき、ディスペンサ４は相対
的に封止領域５の外周に沿って移動することになる。そ
して、プリント基板１は移動開始から次第に加速してい
き、所定の速度に到達するとその速度で定速移動する。
プリント基板１の移動が定速状態になり、所定の塗布開
始点5aにディスペンサ４が対向するまで移動すると、第
３図に示すように、ディスペンサ４からシリコーン樹脂
などのぬれ性の低い撥水性樹脂6aを塗布し始める。Next, the step of forming the outflow prevention wall (second step) will be described with reference to FIGS. First, as shown in FIG. 2, the dispenser 4 is lowered from the above initial position so as to approach the printed circuit board 1. Then, the printed circuit board 1 is moved by the XY table. At this time, the dispenser 4 relatively moves along the outer periphery of the sealing region 5. Then, the printed circuit board 1 gradually accelerates from the start of movement, and when it reaches a predetermined speed, moves at a constant speed at that speed.
When the movement of the printed circuit board 1 reaches a constant speed state and moves until the dispenser 4 is opposed to a predetermined application start point 5a, as shown in FIG. Start applying 6a.
このようにプリント基板１が定速移動状態に到達して
から樹脂の塗布を開始するので、従来のように塗布開始
点の樹脂量が多くならず、樹脂が幅広になることがな
い。むしろ、移動しながら塗布を開始するため、塗布開
始点においては部分的に樹脂がやや狭幅に形成される。As described above, the application of the resin is started after the printed board 1 reaches the constant-speed moving state, so that the amount of the resin at the application start point does not increase as in the related art, and the resin does not become wide. Rather, since the application is started while moving, the resin is partially formed to be slightly narrower at the application start point.
次に、第４図に示すように、ディスペンサ４より低ぬ
れ性樹脂6aを塗布しながら、プリント基板１は上記の定
速度で移動し続ける。そして、第５図に示すように、デ
ィスペンサ４が封止領域５の外周に沿って一周し、再び
塗布開始点5aに到達すると、ディスペンサ４からの樹脂
6aの塗布を停止する。その後もプリント基板１は定速度
で移動し続け、塗布開始点5aから一定距離オーバーラン
してからプリント基板１は停止する（第６図示）。そし
て、第７図に示すように、ディスペンサ４を上昇させ
る。Next, as shown in FIG. 4, the printed circuit board 1 continues to move at the constant speed while applying the low wettability resin 6a from the dispenser 4. Then, as shown in FIG. 5, when the dispenser 4 makes a round along the outer periphery of the sealing region 5 and reaches the application start point 5a again, the resin from the dispenser 4
Stop application of 6a. Thereafter, the printed circuit board 1 continues to move at a constant speed, and after a certain distance overrun from the coating start point 5a, the printed circuit board 1 stops (FIG. 6). Then, as shown in FIG. 7, the dispenser 4 is raised.
このように、樹脂の塗布を停止した後もプリント基板
１が定速移動を続けるので、従来のように移動停止点に
おいて樹脂が多量に塗布されることがなく（いわゆるぼ
た落ちを生じることなく）、この位置に塗布された樹脂
の幅が広くなることはない。むしろ、塗布停止点におい
ては部分的に樹脂はやや狭幅に形成される。As described above, since the printed circuit board 1 continues to move at a constant speed even after the application of the resin is stopped, a large amount of the resin is not applied at the movement stop point as in the related art (without causing so-called dropping). ), The width of the resin applied at this position does not increase. Rather, the resin is formed to be slightly narrower at the application stop point.
なお、低ぬれ性樹脂6aの塗布開始点と塗布停止点は同
一位置である。すなわち、塗布開始時に吐出された樹脂
と塗布停止時に吐出された樹脂とは互いに重なり合う。
このため、前述のように塗布開始時および塗布停止時に
樹脂が狭幅に形成されると、これら両狭幅部同士が重な
り合って接合されるため、この点5aにおける樹脂の幅は
他の部分の樹脂の幅とほぼ等しくなり、樹脂6aは封止領
域５の全周にわたって実質的に同一幅に形成される。The application start point and the application stop point of the low wettability resin 6a are at the same position. That is, the resin discharged at the start of application and the resin discharged at the stop of application overlap with each other.
For this reason, when the resin is formed to have a narrow width at the start of application and at the time of application stop as described above, these narrow portions overlap each other and are joined, so that the width of the resin at this point 5a is different from that of the other portions. The width is substantially equal to the width of the resin, and the resin 6a is formed to have substantially the same width over the entire circumference of the sealing region 5.
このようにして、低ぬれ性樹脂6aの塗布を完了した
後、樹脂6aを硬化させ、流出防止壁6bとする。After the application of the low wettability resin 6a is completed in this way, the resin 6a is cured to form the outflow prevention wall 6b.
最後に第３工程として、流出防止壁6b内に図示しない
注入手段によりエポキシ樹脂等の封止材７を注入し、そ
の上面が実質的に平坦になった状態で硬化させ、半導体
素子１を封止する（第８図示）。Finally, as a third step, a sealing material 7 such as an epoxy resin is injected into the outflow prevention wall 6b by an injection means (not shown), and cured while the upper surface thereof is substantially flat, thereby sealing the semiconductor element 1. Stop (8th illustration).
なお、半導体素子１の実装方法、流出防止壁形成用の
低ぬれ性樹脂6aや封止材７などについては上記実施例に
限定されるものではない。また、本実施例においては、
図示しないXYテーブルを用いてプリント基板１を移動さ
せるようにしたが、プリント基板１を固定させたままで
ディスペンサ４を移動させることも可能である。さらに
は、流出防止壁6bを形成した後で半導体素子２の実装す
る、すなわち第１工程と第２工程の順番を入れ換えるこ
とも可能である。The mounting method of the semiconductor element 1, the low wettability resin 6a for forming the outflow prevention wall, the sealing material 7, and the like are not limited to the above-described embodiment. In the present embodiment,
Although the printed circuit board 1 is moved using an XY table (not shown), the dispenser 4 can be moved while the printed circuit board 1 is fixed. Further, it is also possible to mount the semiconductor element 2 after forming the outflow prevention wall 6b, that is, to exchange the order of the first step and the second step.
［効果］ 以上のような本発明に係る方法によると、流出防止壁
の幅の広さおよび高さが極めて均一に形成できる。従っ
て、封止領域が正確に区画でき、封止材の高さも均一に
形成できる。[Effects] According to the method according to the present invention as described above, the width and the height of the outflow prevention wall can be formed extremely uniformly. Therefore, the sealing region can be accurately partitioned, and the height of the sealing material can be formed uniformly.
第１図は本発明に係る半導体封止方法の第１工程を示す
斜視図、第２〜７図は第２工程を順番に示す斜視図、第
８図は第３工程を示す斜視図である。 １……プリント基板、1a……配線パターン、 ２……半導体素子、４……ディスペンサ、 ５……封止領域、5a……塗布開始点、 6a……低ぬれ性樹脂、6b……流出防止壁、 ７……封止材。FIG. 1 is a perspective view showing a first step of the semiconductor sealing method according to the present invention, FIGS. 2 to 7 are perspective views showing a second step in order, and FIG. 8 is a perspective view showing a third step. . DESCRIPTION OF SYMBOLS 1 ... Printed circuit board, 1a ... Wiring pattern, 2 ... Semiconductor element, 4 ... Dispenser, 5 ... Sealing area, 5a ... Application start point, 6a ... Low wettability resin, 6b ... Outflow prevention Wall 7, sealing material.
Claims (1)
子を実装する第１工程と、上記基板に上記半導体素子の
封止領域を区画するようにぬれ性の低い樹脂を塗布し、
上記樹脂を硬化させることによって流出防止壁を形成す
る第２工程と、上記流出防止壁によって区画された上記
封止領域内に封止材を注入し硬化させる第３工程とを含
み、 上記第２工程において、上記樹脂の塗布は、まず上記基
板に近接するようにディスペンサが下降し、次に上記基
板と上記ディスペンサとが相対的に水平移動を開始し、
上記水平移動が定常速度に到達した後上記樹脂の塗布を
開始し、上記樹脂を塗布しながら水平移動を続け上記封
止領域の外周を一周して塗布開始点に戻ってから上記樹
脂の塗布を停止し、次いで塗布開始点を行き過ぎた後で
上記水平移動を停止し、上記ディスペンサを上昇させる
ことにより行なう ことを特徴とする半導体素子の封止方法。A first step of mounting a semiconductor element on a wiring pattern surface of a printed board; and applying a resin having low wettability to the substrate so as to define a sealing region of the semiconductor element.
A second step of forming the outflow prevention wall by curing the resin, and a third step of injecting and curing a sealing material into the sealing region defined by the outflow prevention wall, In the process, the application of the resin, first, the dispenser descends so as to be close to the substrate, then the substrate and the dispenser start relatively horizontal movement,
After the horizontal movement reaches a steady speed, the application of the resin is started, the horizontal movement is continued while the resin is being applied, the outer periphery of the sealing region is circled, and the application of the resin is started after returning to the application start point. A method for sealing a semiconductor device, comprising: stopping the horizontal movement after the application start point has been stopped, and then raising the dispenser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25985890A JP2835329B2 (en) | 1990-09-28 | 1990-09-28 | Semiconductor element sealing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25985890A JP2835329B2 (en) | 1990-09-28 | 1990-09-28 | Semiconductor element sealing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04137740A JPH04137740A (en) | 1992-05-12 |
| JP2835329B2 true JP2835329B2 (en) | 1998-12-14 |
Family
ID=17339951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25985890A Expired - Fee Related JP2835329B2 (en) | 1990-09-28 | 1990-09-28 | Semiconductor element sealing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2835329B2 (en) |
-
1990
- 1990-09-28 JP JP25985890A patent/JP2835329B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04137740A (en) | 1992-05-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR950704837A (en) | METHOD OF FORMING INTERFACE BETWEEN DIE AND CHIP CARRIER | |
| US5527742A (en) | Process for coated bonding wires in high lead count packages | |
| US6022583A (en) | Method of encapsulating a wire bonded die | |
| JPH01268137A (en) | Method and apparatus for sealing surface of circuit device | |
| JP2835329B2 (en) | Semiconductor element sealing method | |
| JP3874547B2 (en) | IC sealing agent coating method with bump and IC sealing agent coating apparatus with bump | |
| JPH03280554A (en) | Manufacture of semiconductor device | |
| JP2988986B2 (en) | Semiconductor device and manufacturing method thereof | |
| JP3185673B2 (en) | How to apply chip sealing resin | |
| JP2002368029A (en) | Method of manufacturing semiconductor device | |
| KR100214553B1 (en) | Method of making buttom lead package | |
| JPH0379044A (en) | Resin-sealing of semiconductor element | |
| JPS63141394A (en) | Manufacture of hybrid integrated circuit | |
| US20010048999A1 (en) | Reinforced flexible substrates and method therefor | |
| JPS6246536A (en) | Resin molding for electronic parts | |
| JP3309889B2 (en) | Resin sealing method for semiconductor element | |
| JPH0653264A (en) | Manufacture of semiconductor device | |
| JPH09283548A (en) | Electronic circuit board and manufacture thereof | |
| JPH0546270Y2 (en) | ||
| JP2002222821A (en) | Resin frame forming device and method therefor | |
| KR19980017403A (en) | Structure of die attach device for uniformity of adhesive | |
| JPS63318131A (en) | Resin sealing method using hardening resin | |
| JPH0289349A (en) | Film carrier tape for tab | |
| JPH04370940A (en) | Formation of chip-coat resin sealing frame | |
| JPH03123040A (en) | Manufacture of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |