JP2826409B2 - Dry etching equipment - Google Patents
Dry etching equipmentInfo
- Publication number
- JP2826409B2 JP2826409B2 JP4062914A JP6291492A JP2826409B2 JP 2826409 B2 JP2826409 B2 JP 2826409B2 JP 4062914 A JP4062914 A JP 4062914A JP 6291492 A JP6291492 A JP 6291492A JP 2826409 B2 JP2826409 B2 JP 2826409B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- vacuum chamber
- pressure gauge
- dry etching
- gauge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Drying Of Semiconductors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、反応性ガスを真空室に
導入し、一定の圧力で半導体基板をエッチングするドラ
イエッチング装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dry etching apparatus for introducing a reactive gas into a vacuum chamber and etching a semiconductor substrate at a constant pressure.
【０００２】[0002]
【従来の技術】図３は従来のドライエッチング装置の一
例における構成を示す図である。従来のドライエッチン
グ装置は、図３に示すように半導体基板を収納する真空
室４と、この真空室４を排気する真空ポンプ７と、真空
になった真空室４に流入する反応性ガスの流量を制御す
るガス流量制御器１、２及び３と、真空室４の圧力を検
出する圧力計８と、この圧力計８の圧力と設定した圧力
と比較して圧力調整器５の開口を調整する圧力制御部６
及び装置制御部１１とで構成されていた。2. Description of the Related Art FIG. 3 is a diagram showing a configuration of an example of a conventional dry etching apparatus. As shown in FIG. 3, a conventional dry etching apparatus includes a vacuum chamber 4 for accommodating a semiconductor substrate, a vacuum pump 7 for exhausting the vacuum chamber 4, and a flow rate of a reactive gas flowing into the vacuum chamber 4 that has been evacuated. , A pressure gauge 8 for detecting the pressure in the vacuum chamber 4, and an opening of the pressure regulator 5 which is adjusted by comparing the pressure of the pressure gauge 8 with the set pressure. Pressure controller 6
And the device control unit 11.
【０００３】このドライエッチング装置の動作は、ま
ず、真空ポンプ７で真空室４を真空排気し、高真空状態
にする。次に、ガス流量制御器１，２，３より反応性ガ
スを導入する。そして圧力計８で真空室４の圧力を測定
し、設定された圧力値と比較しながら圧力調整器５を調
節して真空室４の圧力を一定に保つ。The operation of this dry etching apparatus is as follows. First, the vacuum chamber 4 is evacuated to a high vacuum state by the vacuum pump 7. Next, a reactive gas is introduced from the gas flow controllers 1, 2, and 3. Then, the pressure in the vacuum chamber 4 is measured by the pressure gauge 8, and the pressure in the vacuum chamber 4 is kept constant by adjusting the pressure regulator 5 while comparing the pressure with the set pressure value.
【０００４】次に、高周波を印加し、プラズマ状態をつ
くり、半導体基板をエッチングする。このように圧力計
８で測定した真空室４の圧力を装置制御部１１に伝え、
設定した圧力になっているかどうかを判定していた。こ
のとき、もし圧力調整器５で圧力制御ができない場合
は、圧力計８で測定した圧力と設定された圧力が異なっ
ていることを装置制御部１１で異常と検知するようにな
っていた。Then, a high frequency is applied to create a plasma state, and the semiconductor substrate is etched. In this way, the pressure of the vacuum chamber 4 measured by the pressure gauge 8 is transmitted to the device control unit 11,
It was determined whether the pressure was the set pressure. At this time, if the pressure control cannot be performed by the pressure regulator 5, the device controller 11 detects that the pressure measured by the pressure gauge 8 is different from the set pressure as an abnormality.
【０００５】[0005]
【発明が解決しようとする課題】この従来のドライエッ
チング装置では、一つの圧力計で測定した真空室の圧力
を圧力制御部に伝え、圧力調整器で真空室の圧力を一定
に保つとともに、装置制御部にも真空室の圧力を伝え、
設定された圧力になっているかどうかを判定していた。
しかしながら半導体基板上の薄膜をエッチングすること
により発生する反応生成物や、反応性ガスにより、圧力
計が汚染され劣化し易い。このため、しばしば真空室の
圧力が正確に測定できなくなることがある。また、この
場合には実際の圧力は異なった圧力を伝えるようにな
る。一方、圧力制御部や装置制御部は、圧力計の劣化を
検知する機能はなく、半導体基板のエッチングに異常を
発見することにより、初めて圧力計の異常が発見される
ことになる。さらに、この圧力計が劣化する時期には一
定としないので、交換時期を決めることが困難であっ
た。In this conventional dry etching apparatus, the pressure of the vacuum chamber measured by one pressure gauge is transmitted to a pressure controller, and the pressure of the vacuum chamber is kept constant by a pressure regulator. The pressure of the vacuum chamber is also transmitted to the control unit,
It was determined whether the pressure was the set pressure.
However, a pressure gauge is easily contaminated and deteriorated by a reaction product or a reactive gas generated by etching a thin film on a semiconductor substrate. For this reason, the pressure in the vacuum chamber often cannot be measured accurately. Also, in this case, the actual pressure will transmit a different pressure. On the other hand, the pressure control unit and the device control unit do not have a function of detecting the deterioration of the pressure gauge, and the abnormality of the pressure gauge is first discovered by discovering the abnormality in the etching of the semiconductor substrate. Further, since the pressure gauge is not fixed when it deteriorates, it is difficult to determine the replacement time.
【０００６】本発明の目的は、圧力計の異常を速やかに
検知し、事前に処理出来るドライエッチング装置を提供
することである。SUMMARY OF THE INVENTION An object of the present invention is to provide a dry etching apparatus capable of promptly detecting an abnormality of a pressure gauge and preliminarily processing the pressure gauge.
【０００７】[0007]
【課題を解決するための手段】本発明の特徴は、半導体
基板を収納する真空室と、この真空室を真空排気する真
空ポンプと、反応ガスを前記真空室に導入する流量を制
御するガス流量制御器と、前記真空室の圧力を測定する
第１の圧力計および第２の圧力計と、前記第１の圧力計
の圧力値により前記ガス流量制御器を制御するとともに
前記第１の圧力計の圧力値と前記第２の圧力計の圧力値
との違いを検知し異常と判定する装置制御部とを備える
ドライエッチング装置である。 Feature of the present invention SUMMARY OF THE INVENTION A gas to control the vacuum chamber for accommodating a semiconductor substrate, a vacuum pump you evacuating the vacuum chamber, the flow rate of introducing the reaction gas into the vacuum chamber Flow controller and measure the pressure in the vacuum chamber
A first pressure gauge and a second pressure gauge, and the first pressure gauge
Controlling the gas flow controller by the pressure value of
Pressure value of the first pressure gauge and pressure value of the second pressure gauge
And a device control unit that detects a difference from the above and determines that the device is abnormal .
【０００８】また、前記真空室とバルブを介して接続さ
れる室に第３の圧力計を備えることが望ましい。 Further, the vacuum chamber is connected to the vacuum chamber via a valve.
It is desirable to provide a third pressure gauge in the chamber to be removed.
【０００９】[0009]
【実施例】次に本発明について、図面を参照して説明す
る。図１は、本発明のドライエッチング装置の一実施例
における構成を示す図である。このドライエッチング装
置は、図１に示すように、真空室４の圧力を検出する圧
力計８以外に圧力計８の圧力値が正しいか否かを監視す
る圧力計９を設けたことである。それ以外は従来例と同
じである。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing the configuration of a dry etching apparatus according to an embodiment of the present invention. In this dry etching apparatus, as shown in FIG. 1, a pressure gauge 9 for monitoring whether or not the pressure value of the pressure gauge 8 is correct is provided in addition to the pressure gauge 8 for detecting the pressure of the vacuum chamber 4. Otherwise, it is the same as the conventional example.
【００１０】次に、このドライエッチング装置の動作を
説明する。まず、従来例で説明したと同じように、真空
室４を真空排気した後に、それぞれ制御された反応性ガ
スを導入し、装置制御部１１で設定された圧力と圧力計
８で測定した圧力を圧力制御部６で比較し、圧力調整器
５で真空室４の圧力を一定に保つ。また、圧力計９で真
空室４の圧力を装置制御部１１に伝え、設定された圧力
になっているかどうかを判定する。もし、ここで圧力計
８が劣化した場合は、実際の圧力とは、異なった圧力に
真空室４の圧力が制御されるため、圧力計９から装置制
御部１１に伝えられる圧力は、設定された圧力とは、異
なった圧力になるので、装置制御部１１で異常が検知で
きる。また、圧力計９が劣化した場合は、真空室４の圧
力は、装置制御部１１で設定された圧力に制御されてい
るが、装置制御部１１に伝えられる圧力は、実際の圧力
とは、異なっているので、異常が検知できる。このよう
に同種の圧力計を少くとも２個取付け、比較して圧力値
に差があれば、ただちにいずれかの圧力計が異常である
ことが発見出来る。Next, the operation of the dry etching apparatus will be described. First, in the same manner as described in the conventional example, after evacuating the vacuum chamber 4, each controlled reactive gas is introduced, and the pressure set by the device control unit 11 and the pressure measured by the pressure gauge 8 are measured. The pressure controller 6 makes a comparison, and the pressure in the vacuum chamber 4 is kept constant by the pressure regulator 5. Further, the pressure in the vacuum chamber 4 is transmitted to the device control unit 11 by the pressure gauge 9 and it is determined whether or not the pressure is the set pressure. If the pressure gauge 8 deteriorates, the pressure transmitted from the pressure gauge 9 to the device control unit 11 is set because the pressure of the vacuum chamber 4 is controlled to a pressure different from the actual pressure. Since the pressure is different from the applied pressure, the device control unit 11 can detect an abnormality. When the pressure gauge 9 is deteriorated, the pressure in the vacuum chamber 4 is controlled to the pressure set by the device control unit 11, but the pressure transmitted to the device control unit 11 is the actual pressure. Since they are different, an abnormality can be detected. As described above, at least two pressure gauges of the same type are attached, and if there is a difference between the pressure values in comparison, it can be immediately found that one of the pressure gauges is abnormal.
【００１１】図２は本発明のドライエッチング装置の他
の実施例における構成を示す図である。このドライエッ
チング装置は、図２に示すように、二つの圧力計８及び
９以外に圧力計１０を追加して設け、この圧力計１０を
真空室４にバルブ１２を介して取付けたことである。FIG. 2 is a diagram showing the configuration of another embodiment of the dry etching apparatus of the present invention. In this dry etching apparatus, as shown in FIG. 2, a pressure gauge 10 is additionally provided in addition to the two pressure gauges 8 and 9, and this pressure gauge 10 is attached to the vacuum chamber 4 via a valve 12. .
【００１２】次に、このドライエッチング装置の動作に
ついて説明する。まずは反応ガスを真空室４に導入し、
装置制御部１１で設定された圧力と圧力計８で測定した
圧力を圧力制御部６で比較し、圧力調整器５で真空室４
の圧力を一定に保つ。また、圧力計で真空室４の圧力を
装置制御部１１に伝え、設定された圧力になっているか
どうかを判定する。さらに圧力計１０は、反応性ガスを
真空室４に導入している時は、バルブ１２を閉じ、導入
していない時は開けるようにし、反応性ガスや反応生成
物により劣化しないようにしておくことである。このこ
とは前述の実施例では圧力計が劣化した場合に、圧力計
８と圧力計９のどちらが劣化したかの判定ができなかっ
たが、圧力計１０を基準にすることにより、判定ができ
るという利点がある。Next, the operation of the dry etching apparatus will be described. First, the reaction gas is introduced into the vacuum chamber 4,
The pressure set by the device control unit 11 and the pressure measured by the pressure gauge 8 are compared by the pressure control unit 6, and the
Keep the pressure constant. Further, the pressure of the vacuum chamber 4 is transmitted to the device control unit 11 by a pressure gauge, and it is determined whether or not the pressure is the set pressure. Further, the pressure gauge 10 closes the valve 12 when the reactive gas is introduced into the vacuum chamber 4 and opens the valve 12 when the reactive gas is not introduced, so as not to be deteriorated by the reactive gas or the reaction product. That is. This means that in the above-described embodiment, when the pressure gauge was deteriorated, it was not possible to determine which of the pressure gauge 8 and the pressure gauge 9 was deteriorated, but it was possible to make a determination by using the pressure gauge 10 as a reference. There are advantages.
【００１３】[0013]
【発明の効果】以上説明したように本発明は、真空室の
圧力を監視するための圧力計と真空室の圧力を圧力制御
部に伝え、圧力調整器を動作させ圧力を制御するための
圧力計とを設け、２つの圧力計の測定した圧力を比較す
ることにより、いずれかの圧力計が劣化したことを検知
できるとともに半導体基板が異常にエッチングされる前
に交換し得るという効果がある。As described above, according to the present invention, the pressure gauge for monitoring the pressure in the vacuum chamber and the pressure in the vacuum chamber are transmitted to the pressure control unit, and the pressure for operating the pressure regulator to control the pressure is controlled. By providing a pressure gauge and comparing the pressures measured by the two pressure gauges, it is possible to detect that one of the pressure gauges has deteriorated and to replace the pressure gauge before the semiconductor substrate is abnormally etched.
【図１】本発明のドライエッチング装置の一実施例にお
ける構成を示す図である。FIG. 1 is a diagram showing a configuration of an embodiment of a dry etching apparatus of the present invention.
【図２】本発明のドライエッチング装置の他の実施例に
おける構成を示す図である。FIG. 2 is a diagram showing a configuration of another embodiment of the dry etching apparatus of the present invention.
【図３】従来のドライエッチング装置の一例における構
成を示す図である。FIG. 3 is a diagram showing a configuration of an example of a conventional dry etching apparatus.
１，２，３ ガス流量制御器 ５ 圧力調整器 ６ 圧力制御部 ７ 真空ポンプ ８，９，１０ 圧力計 １１ 装置制御部 １２ バルブ 1, 2, 3 Gas flow controller 5 Pressure regulator 6 Pressure controller 7 Vacuum pump 8, 9, 10 Pressure gauge 11 Device controller 12 Valve
Claims (2)
空室を真空排気する真空ポンプと、反応ガスを前記真空
室に導入する流量を制御するガス流量制御器と、前記真
空室の圧力を測定する第１の圧力計および第２の圧力計
と、前記第１の圧力計の圧力値により前記ガス流量制御
器を制御するとともに前記第１の圧力計の圧力値と前記
第２の圧力計の圧力値との違いを検知し異常と判定する
装置制御部とを備えることを特徴とするドライエッチン
グ装置。And 1. A vacuum chamber for accommodating a semiconductor substrate, a vacuum pump you evacuating the vacuum chamber, and a gas flow controller for controlling the flow rate of introducing the reaction gas into the vacuum chamber, the pressure of the vacuum chamber A first pressure gauge and a second pressure gauge for measuring pressure, and the gas flow rate control based on a pressure value of the first pressure gauge.
And a pressure value of the first pressure gauge and the pressure value of the first pressure gauge.
Detect the difference from the pressure value of the second pressure gauge and judge it as abnormal
A dry etching apparatus comprising: an apparatus control unit .
室に第３の圧力計を備えることを特徴とする請求項１記
載のドライエッチング装置。2. The apparatus is connected to the vacuum chamber via a valve.
The dry etching apparatus according to claim 1, wherein a third pressure gauge is provided in the chamber .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4062914A JP2826409B2 (en) | 1992-03-19 | 1992-03-19 | Dry etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4062914A JP2826409B2 (en) | 1992-03-19 | 1992-03-19 | Dry etching equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05267224A JPH05267224A (en) | 1993-10-15 |
| JP2826409B2 true JP2826409B2 (en) | 1998-11-18 |
Family
ID=13214002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4062914A Expired - Fee Related JP2826409B2 (en) | 1992-03-19 | 1992-03-19 | Dry etching equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2826409B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009540117A (en) * | 2006-06-08 | 2009-11-19 | シデル パーティシペイションズ | Plasma vessel processing machine with vacuum circuit |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4695238B2 (en) * | 1999-12-14 | 2011-06-08 | 東京エレクトロン株式会社 | Pressure control method |
| KR100467813B1 (en) * | 2002-05-02 | 2005-01-24 | 동부아남반도체 주식회사 | Apparatus of warming for unstriping of photoresist and method of manufacturing for semiconductor device using the same |
| JP6727871B2 (en) * | 2016-03-18 | 2020-07-22 | 東京エレクトロン株式会社 | Exhaust system and substrate processing apparatus using the same |
| WO2020066701A1 (en) * | 2018-09-26 | 2020-04-02 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Substrate processing apparatus, method for producing semiconductor device, and program |
| JP2020148473A (en) * | 2019-03-11 | 2020-09-17 | 東京エレクトロン株式会社 | Method for calibrating multiple chamber pressure sensors and substrate processing system |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6091642A (en) * | 1983-10-25 | 1985-05-23 | Toshiba Corp | Vacuum device for semiconductor manufacture |
| JPS61220332A (en) * | 1985-03-27 | 1986-09-30 | Hitachi Ltd | Etching end point judging equipment |
| JPS62169416A (en) * | 1986-01-22 | 1987-07-25 | Hitachi Ltd | Method and equipment for controlling pressure of vacuum apparatus |
| JPS6368790A (en) * | 1986-09-10 | 1988-03-28 | Hitachi Ltd | Vacuum exhauster |
-
1992
- 1992-03-19 JP JP4062914A patent/JP2826409B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009540117A (en) * | 2006-06-08 | 2009-11-19 | シデル パーティシペイションズ | Plasma vessel processing machine with vacuum circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05267224A (en) | 1993-10-15 |
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