JP2821239B2 - Method for forming metal multilayer film on glass substrate - Google Patents
Method for forming metal multilayer film on glass substrateInfo
- Publication number
- JP2821239B2 JP2821239B2 JP13768890A JP13768890A JP2821239B2 JP 2821239 B2 JP2821239 B2 JP 2821239B2 JP 13768890 A JP13768890 A JP 13768890A JP 13768890 A JP13768890 A JP 13768890A JP 2821239 B2 JP2821239 B2 JP 2821239B2
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- multilayer film
- metal multilayer
- layer
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明はガラス基板の金属多層膜形成方法に関し、よ
り具体的にはガラス基板上に半田付けを可能にするため
の金属多層膜の形成方法に関するものである。Description: TECHNICAL FIELD The present invention relates to a method for forming a metal multilayer film on a glass substrate, and more specifically, a method for forming a metal multilayer film for enabling soldering on a glass substrate. It is about.
［従来の技術］ 従来よりガラス基板は電子部品の分野において広く用
いられているが、近年ガラス基板に種々の機能を付加す
るために、半田付けが可能であることが要求されるよう
になってきており、そのためガラス基板表面に金属多層
膜を形成し、その膜を介して半田付けが行われている。[Prior Art] Conventionally, glass substrates have been widely used in the field of electronic components, but in recent years, it has been required to be able to be soldered in order to add various functions to the glass substrates. Therefore, a metal multilayer film is formed on the surface of a glass substrate, and soldering is performed via the film.
この半田付け用金属多層膜の一種に、ガラス基板表面
にガラスと密着性のよいCr、Ti、Mo、Ｗ等の金属から選
ばれる最下層、半田の拡散を防止するAl、Ni、Pd等の金
属から選ばれる中間層、半田濡れ性のよいAu、Ag、Cu等
の金属から選ばれる最上層をスパッタ、真空蒸着法等に
より順次成膜することにより作製されるものがある。こ
のようにして作製される金属多層膜は半田付けによる封
着やワイヤ接続を可能にするものであり、例えば液晶表
示素子と駆動回路との接続部分、蛍光表示管の電極ある
いは太陽電池用の電極等に用いられる。One kind of this metal multilayer film for soldering, the lowermost layer selected from metals such as Cr, Ti, Mo, W with good adhesion to glass on the glass substrate surface, Al, Ni, Pd etc. to prevent the diffusion of solder Some are manufactured by sequentially depositing an intermediate layer selected from metals and an uppermost layer selected from metals such as Au, Ag, and Cu having good solder wettability by sputtering, vacuum deposition, or the like. The metal multilayer film manufactured in this manner enables sealing or wire connection by soldering, for example, a connection portion between a liquid crystal display element and a driving circuit, an electrode of a fluorescent display tube, or an electrode for a solar cell. Used for etc.
［発明が解決しようとする問題点］ 一般にガラス基板に半田付けを可能にするためには、
金属膜表面に半田が拡散し得ることが重要であるが、そ
の一方で拡散し過ぎると半田がガラス基板表面まで到達
し、最下層の金属膜がこれに侵されて付着力が低下する
という問題が生じる。それゆえ半田付け用金属多層膜は
上記したように中間層を有する構造となっており、半田
の拡散の程度を調節するために半田拡散防止効果の大き
いAlと、前記効果の比較的小さいNiやPd等を組み合わせ
て用いられることが多い。[Problems to be solved by the invention] Generally, in order to enable soldering to a glass substrate,
It is important that the solder can diffuse to the surface of the metal film, but if it spreads too much, the solder reaches the surface of the glass substrate, and the lowermost metal film is attacked by this, reducing the adhesion. Occurs. Therefore, the metal multilayer film for soldering has a structure having an intermediate layer as described above, and in order to adjust the degree of solder diffusion, Al having a large effect of preventing solder diffusion, Ni having a relatively small effect described above, Often used in combination with Pd.
しかしながらスパッタや真空蒸着により形成される金
属多層膜の端面部は各層の端面が露出しているために、
該端面部に水分が存在すると、膜構成金属間の電極電位
差によって電解腐食を起こすことがある。特にAl層を含
む場合、最上層に用いられるAu等との電極電位差が大き
いため、洗浄中や保管中に電解腐食を起こし易く、これ
に起因してブリスターいわゆる表面フクレ等の欠陥が発
生するといった問題がある。However, since the end face of each layer is exposed at the end face of the metal multilayer film formed by sputtering or vacuum deposition,
If moisture is present at the end face, electrolytic corrosion may occur due to the potential difference between the electrodes constituting the film. In particular, when an Al layer is included, since the electrode potential difference with Au or the like used as the uppermost layer is large, electrolytic corrosion is likely to occur during cleaning or storage, and due to this, defects such as blisters, so-called surface blisters, are generated. There's a problem.
本発明は上記事情に鑑みなされたもので、Al層を有
し、膜形成後に電解腐食を起こすことのない半田付け用
金属多層膜をガラス基板上に形成する方法を提供するこ
とを目的とする。The present invention has been made in view of the above circumstances, and has an object to provide a method of forming a metal multilayer film for soldering having an Al layer and not causing electrolytic corrosion after film formation on a glass substrate. .
［問題点を解決するための手段］ 本発明のガラス基板の金属多層膜形成方法は、ガラス
基板表面に、中間層としてAl層を含む半田付け用金属多
層膜を成膜した後、Al層露出部を酸化処理することを特
徴とする。[Means for Solving the Problems] In the method for forming a metal multilayer film on a glass substrate of the present invention, a metal multilayer film for soldering including an Al layer as an intermediate layer is formed on the surface of a glass substrate, and then the Al layer is exposed. The part is oxidized.
［作用］ 本発明において、ガラス基板表面に金属多層膜を成膜
した後、Al層露出部を熱処理あるいは酸素プラズマ処理
等により酸化処理すると、金属膜端面部に水分が存在し
ても、Alがイオンとなって溶出しないために電解腐食が
起こらない。[Operation] In the present invention, after the metal multilayer film is formed on the glass substrate surface, the exposed portion of the Al layer is oxidized by heat treatment or oxygen plasma treatment. Electrolytic corrosion does not occur because it does not elute as ions.
なお熱処理により酸化処理する場合、Al層の露出部が
十分に酸化し得る適当な条件を設定して行われるが、特
に220〜250℃で４時間以上熱処理することが好ましい。
即ち220℃より熱処理温度が低いとAl層露出部を短時間
で十分に酸化させることができず、250℃より高いと膜
構成金属間で拡散が起こり易くなるためであり、また熱
処理時間が４時間より短い場合も先記した効果が十分に
得られない。In the case of performing the oxidizing treatment by heat treatment, appropriate conditions are set so that the exposed portion of the Al layer can be sufficiently oxidized. However, it is particularly preferable to perform the heat treatment at 220 to 250 ° C. for 4 hours or more.
That is, if the heat treatment temperature is lower than 220 ° C., the exposed portion of the Al layer cannot be sufficiently oxidized in a short time, and if the heat treatment temperature is higher than 250 ° C., diffusion between film constituent metals tends to occur. If the time is shorter than the time, the above-mentioned effect cannot be sufficiently obtained.
また酸素プラズマ処理は、酸素ラジカルだけを用いて
酸化反応を行うものである。この処理による場合、通常
プラズマ処理装置を使用し、その酸素圧力は0.2〜2.0to
rr、高周波電力は250〜500w、電子密度は1017〜1018/m3
であることが好ましい。In the oxygen plasma treatment, an oxidation reaction is performed using only oxygen radicals. In the case of this processing, a plasma processing apparatus is usually used, and the oxygen pressure is 0.2 to 2.0 to
rr, RF power 250～500W, electron density 10 17 ~10 18 / m 3
It is preferred that
［実施例］ 以下、実施例に基づいて本発明のガラス基板の金属多
層膜形成方法を説明する。EXAMPLES Hereinafter, a method for forming a metal multilayer film on a glass substrate of the present invention will be described based on examples.
（実施例１） 70℃に保持した40×20×1mmの大きさのガラス基板に
真空蒸着装置を用いてCr、Al、Ni、Auを膜厚がそれぞれ
0.05μｍ、0.15μｍ、0.3μｍ、0.05μｍとなるように
順次成膜した後、電気炉中で220℃の温度で４時間熱処
理して試料を得た。また比較のために、熱処理を行わ
ず、その他の条件はすべて上記と同様に処理した試料を
作製した。(Example 1) Cr, Al, Ni, and Au were each deposited on a glass substrate having a size of 40 x 20 x 1 mm and kept at 70 ° C using a vacuum evaporation apparatus.
After sequentially forming a film to have a thickness of 0.05 μm, 0.15 μm, 0.3 μm, and 0.05 μm, a sample was obtained by performing a heat treatment at a temperature of 220 ° C. for 4 hours in an electric furnace. For comparison, a sample was prepared in which the heat treatment was not performed and all other conditions were the same as described above.
このようにして作製した２つの試料について耐湿試験
を行ったところ、比較のために作製した試料には電解腐
食が認められたのに対して、熱処理を施した試料には電
解腐食が全く認められなかった。When a moisture resistance test was performed on the two samples prepared in this manner, electrolytic corrosion was observed in the sample prepared for comparison, whereas electrolytic corrosion was completely observed in the sample subjected to the heat treatment. Did not.
なお、耐湿試験は60℃、湿度98％の条件下に72時間試
料を保持した後、顕微鏡によりその表面を観察して評価
したものである。The moisture resistance test was performed by holding a sample under the conditions of 60 ° C. and a humidity of 98% for 72 hours, and then observing the surface with a microscope to evaluate.
（実施例２） 上記実施例と同様の条件でガラス基板上にCr、Al、N
i、Auを順次成膜した後、バレル型プラズマ処理装置を
用いて酸素圧力1torr、高周波電力300w、電子密度1017/
m3の条件で10分間酸素プラズマ処理を施し、試料を得
た。(Example 2) Cr, Al, N were formed on a glass substrate under the same conditions as in the above example.
After sequentially depositing i and Au, an oxygen pressure of 1 torr, a high frequency power of 300 w, an electron density of 10 17 /
Oxygen plasma treatment was performed for 10 minutes under the condition of m 3 to obtain a sample.
このようにして得られた試料について実施例１と同様
の耐湿試験を行ったところ、電解腐食は全く認められな
かった。When a moisture resistance test was performed on the sample thus obtained in the same manner as in Example 1, no electrolytic corrosion was observed.
［効果］ 以上説明したように本発明のガラス基板の金属多層膜
形成方法によれば、Al層を有する半田付け用金属膜の電
解腐食を防止することができ、これに起因するブリスタ
ー等の欠陥の発生を防ぐことが可能である。[Effects] As described above, according to the method for forming a metal multilayer film on a glass substrate of the present invention, electrolytic corrosion of a metal film for soldering having an Al layer can be prevented, and defects such as blisters caused by this can be prevented. Can be prevented from occurring.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｃ２３Ｃ 28/02 Ｃ２３Ｃ 28/02 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification code FI C23C 28/02 C23C 28/02
Claims (3)
む半田付け用金属多層膜を成膜した後、Al層露出部を酸
化処理することを特徴とするガラス基板の金属多層膜形
成方法。1. A method for forming a metal multilayer film on a glass substrate, comprising: forming a metal multilayer film for soldering containing an Al layer as an intermediate layer on the surface of the glass substrate; and oxidizing an exposed portion of the Al layer. .
特許請求の範囲第１項記載のガラス基板の金属多層膜形
成方法。2. The method according to claim 1, wherein the oxidation treatment is a heat treatment.
特徴とする特許請求の範囲第１項記載のガラス基板の金
属多層膜形成方法。3. The method for forming a metal multilayer film on a glass substrate according to claim 1, wherein the oxidation treatment is an oxygen plasma treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13768890A JP2821239B2 (en) | 1990-05-28 | 1990-05-28 | Method for forming metal multilayer film on glass substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13768890A JP2821239B2 (en) | 1990-05-28 | 1990-05-28 | Method for forming metal multilayer film on glass substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0431341A JPH0431341A (en) | 1992-02-03 |
| JP2821239B2 true JP2821239B2 (en) | 1998-11-05 |
Family
ID=15204485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13768890A Expired - Fee Related JP2821239B2 (en) | 1990-05-28 | 1990-05-28 | Method for forming metal multilayer film on glass substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2821239B2 (en) |
-
1990
- 1990-05-28 JP JP13768890A patent/JP2821239B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0431341A (en) | 1992-02-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |