JP2820400B2 - Drilling method for silicon single crystal - Google Patents
Drilling method for silicon single crystalInfo
- Publication number
- JP2820400B2 JP2820400B2 JP9008413A JP841397A JP2820400B2 JP 2820400 B2 JP2820400 B2 JP 2820400B2 JP 9008413 A JP9008413 A JP 9008413A JP 841397 A JP841397 A JP 841397A JP 2820400 B2 JP2820400 B2 JP 2820400B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon single
- drilling
- present
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/02—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by sawing
- B28D1/04—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by sawing with circular or cylindrical saw-blades or saw-discs
- B28D1/041—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by sawing with circular or cylindrical saw-blades or saw-discs with cylinder saws, e.g. trepanning; saw cylinders, e.g. having their cutting rim equipped with abrasive particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/021—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by drilling
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mining & Mineral Resources (AREA)
- Drilling And Boring (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ケイ素単結晶に微
小な穴あけ加工を高速で施す方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for high-speed drilling of fine holes in a silicon single crystal.
【０００２】[0002]
【従来の技術】これまで、シリコンウエーハのような脆
く硬い材料を穴あけ加工するには、ダイヤモンドコアド
リルを用いて行われているが、この方法では送り速度を
増大させた場合、１．５ｍｍ／分が限界であり、それ以
上にすると穴あけのエッジ部にチッピングを生じ、高品
位の製品を得ることができない。2. Description of the Related Art Heretofore, drilling of a fragile and hard material such as a silicon wafer has been performed by using a diamond core drill. However, if it is more than that, chipping occurs at the edge of the hole, and a high-quality product cannot be obtained.
【０００３】他方、アルミナセラミックスや窒化ケイ素
セラミックスのような破壊靭性値の高い難削性セラミッ
クスを穴あけする際に、４０ｋＨｚの高周波振動を付加
したダイヤモンドコアドリルを用い、振幅２４〜２８μ
ｍの条件下、回転周速度２〜７ｍ／分という低い回転速
度で加工することは知られている（平成７年１１月７日
発行，１９９５年度精密工学会九州支部鹿児島地方講演
会講演論文集，第５９ページ）。しかしながら、このよ
うな低速回転をケイ素単結晶に適用した場合、穴周縁の
損傷は避けられるかも知れないが、加工速度が遅く、と
うてい実用に供することはできない。On the other hand, when drilling hard-to-cut ceramics having a high fracture toughness value, such as alumina ceramics and silicon nitride ceramics, a diamond core drill to which a high-frequency vibration of 40 kHz is applied is used.
It is known that machining is performed at a rotational speed as low as 2 to 7 m / min under the condition of m (published on November 7, 1995, Proceedings of the Kagoshima Regional Lecture Meeting of the 1995 Society of Precision Engineering, Kyushu Branch, 1995). , Page 59). However, when such low-speed rotation is applied to a silicon single crystal, damage to the periphery of the hole may be avoided, but the processing speed is low, and it cannot be put to practical use.
【０００４】[0004]
【発明が解決しようとする課題】本発明は、ケイ素単結
晶に、エッジ部のチッピングを生じることなく、０．１
〜０．５ｍｍという微小な穴を高速であける方法を提供
するためになされたものである。SUMMARY OF THE INVENTION The present invention provides a silicon single crystal having an edge portion of 0.1% without chipping.
The purpose of the present invention is to provide a method for forming a small hole of about 0.5 mm at a high speed.
【０００５】[0005]
【課題を解決するための手段】本発明者らは、ケイ素単
結晶の穴あけ加工について種々研究を重ねた結果、これ
まで使用されていなかった６０ｋＨｚという大きい高周
波振動を付加したダイヤモンドコアドリルを用いると、
送り速度を１．５ｍｍ／分よりも増大させてもチッピン
グを生じることなく穴あけができることを見出し、この
知見に基づいて本発明をなすに至った。Means for Solving the Problems The inventors of the present invention have conducted various studies on drilling of a silicon single crystal, and as a result, using a diamond core drill to which a large high-frequency vibration of 60 kHz, which has not been used, has been used.
It has been found that drilling can be performed without chipping even when the feed speed is increased beyond 1.5 mm / min, and the present invention has been made based on this finding.
【０００６】すなわち、本発明は、高周波振動を付加し
たダイヤモンドコアドリルによりケイ素単結晶に穴あけ
加工を施すに当り、周波数６０±１ｋＨｚ、振幅１〜５
μｍの条件下、送り速度２．０〜６．０ｍｍ／分で行う
ことを特徴とする高速穴あけ加工方法を提供するもので
ある。That is, according to the present invention, when drilling a silicon single crystal with a diamond core drill to which high-frequency vibration is applied, the frequency is 60 ± 1 kHz and the amplitude is 1 to 5 kHz.
It is intended to provide a high-speed drilling method characterized in that the feed rate is 2.0 to 6.0 mm / min under the condition of μm.
【０００７】[0007]
【発明の実施の形態】次に、添付図面にしたがって本発
明を詳細に説明する。図１は、本発明方法を行うのに用
いられる加工装置の構造の１例を説明するための側面図
であって、回転しているダイヤモンドコアドリル１には
発振器２よりホーン３を介して高周波振動が付加され、
支持部４に支持されて試料６に接触している。高周波発
生装置５は、従来使用されている最高周波数４０ｋＨｚ
のものよりもはるかに高い６０ｋＨｚのものであり、こ
れは発振器２に直結している。このような構造の加工装
置におけるダイヤモンドコアドリル１をケイ素単結晶試
料６の表面に接触させると、ドリルの回転と上下振動に
より、穴あけ加工が施される。この加工装置の主体部分
１〜４は、通常ベルトを介して駆動されているが、これ
をモータに直結して駆動すると、回転精度を高くするこ
とができるし、さらに周波数を高くすることにより、設
計上ホーンが短かくなり、振幅も小さくすることができ
るので、小型、軽量化することができる上に、高精度、
微細な加工が可能になるので有利である。Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a side view for explaining an example of the structure of a processing apparatus used for performing the method of the present invention. Is added,
The sample is supported by the support unit 4 and is in contact with the sample 6. The high frequency generator 5 has a maximum frequency of 40 kHz conventionally used.
Which is much higher than that of 60 kHz, which is directly connected to the oscillator 2. When the diamond core drill 1 in the processing apparatus having such a structure is brought into contact with the surface of the silicon single crystal sample 6, drilling is performed by rotation of the drill and vertical vibration. The main parts 1 to 4 of this processing device are usually driven via a belt, but when this is directly connected to a motor and driven, the rotation accuracy can be increased, and by further increasing the frequency, The horn is shorter in design and the amplitude can be reduced, so that it can be smaller and lighter,
This is advantageous because fine processing becomes possible.
【０００８】本発明においては、このような装置を用
い、周波数６０±１ｋＨｚ、振幅１〜５μｍ、好ましく
は１．５〜３．０μｍで穴あけ加工する。この際のダイ
ヤモンドコアドリルの回転数としては通常のドリルによ
り穴あけの際に用いられる回転数１０００〜６０００ｒ
ｐｍの範囲で任意に選ぶことができる。このようにし
て、送り速度２．０〜６．０ｍｍ／分という高速で、ケ
イ素単結晶に穴あけ加工をすることができる。In the present invention, a hole is drilled at a frequency of 60 ± 1 kHz and an amplitude of 1 to 5 μm, preferably 1.5 to 3.0 μm, using such an apparatus. In this case, the number of rotations of the diamond core drill is 1000 to 6000 r which is used for drilling with a normal drill.
pm can be arbitrarily selected. In this manner, the silicon single crystal can be drilled at a high feed rate of 2.0 to 6.0 mm / min.
【０００９】[0009]
【発明の効果】本発明においては、ケイ素単結晶を高速
で穴あけ加工しうるとともに、高い周波数を用いること
により、高周波音が低下し、周囲環境に与える雑音を少
なくすることができる上に、ホーンが短くなるため、精
度、剛性を向上させることができるという利点がある。
さらに、作用する加工力が非常に小さいため、この方法
で加工した面は、加工による損傷が非常に少なく、高品
質の製品が得られる。また、通常の微細深穴加工では、
直径に対し、２倍以上の深い穴を加工することは非常に
困難であるが本発明によると直径の５倍以上の深い穴を
加工することができる。According to the present invention, the silicon single crystal can be drilled at a high speed, and by using a high frequency, the high-frequency sound can be reduced and the noise given to the surrounding environment can be reduced. Has the advantage that accuracy and rigidity can be improved.
Further, since the working force applied is very small, the surface machined by this method has very little damage due to machining, and a high quality product can be obtained. Also, in normal fine deep hole processing,
It is very difficult to machine a hole that is at least twice as large as the diameter, but according to the present invention, it is possible to machine a hole that is at least five times the diameter.
【００１０】[0010]
【実施例】次に、実施例により本発明をさらに詳細に説
明する。Next, the present invention will be described in more detail with reference to examples.
【００１１】参考例 図１に示す構造の高周波振動付加加工装置を用いた。こ
の装置における振動系に関する機能は、周波数６０±１
ｋＨｚ、振幅１〜５μｍ、発振器出力１００Ｗ、スピン
ドル系に関する機能は、モータ出力４００Ｗ、回転数０
〜６０００ｒｐｍであった。この装置に径３．０ｍｍの
ダイヤモンド電着インターナル軸付き砥石（＃１５０）
を工具ホルダーにより取り付け、ガラス板にワックスで
接着した直径１８０ｍｍ、厚さ０．７５ｍｍのシリコン
ウエーハに貫通穴をあけた。加工液としてはソリューブ
ルタイプを使用し、これを１．５リットル／分で側方か
ら加工部へ注入した。加工力は、工具動力計（キスラ
ー）を使用して軸方向分力と回転力を測定した。このよ
うにして、送り速度０．５ｍｍ／分で穴あけしたときの
軸方向加工力と回転力の変動状態を図２に示す。この図
においてＡ域（図の左側）は従来行われている高周波を
付加しない加工方法によるもの、Ｂ域（図の右側）は本
発明の加工方法によるものである。このように、従来の
加工方法では約４０Ｎの軸方向加工力が作用しているの
に対し、本発明の加工方法では約３Ｎ（従来方法の約８
％）と非常に小さく、しかも安定している。REFERENCE EXAMPLE A high-frequency vibration processing apparatus having the structure shown in FIG. 1 was used. The function of the vibration system in this device is 60 ± 1
kHz, amplitude 1-5 μm, oscillator output 100 W, functions related to spindle system, motor output 400 W, rotation speed 0
６6000 rpm. A grindstone with a 3.0 mm diameter electrodeposited diamond internal shaft (# 150)
Was attached with a tool holder, and a through hole was made in a silicon wafer having a diameter of 180 mm and a thickness of 0.75 mm, which was bonded to a glass plate with wax. A solution type was used as a working fluid, and the solution was injected into the working portion from the side at a rate of 1.5 L / min. The processing force was measured for axial component force and rotational force using a tool dynamometer (Kistler). FIG. 2 shows the fluctuation state of the axial working force and the rotational force when drilling at a feed rate of 0.5 mm / min. In this figure, the area A (left side in the figure) is based on the conventional processing method without adding a high frequency, and the area B (right side in the figure) is based on the processing method of the present invention. As described above, in the conventional processing method, an axial processing force of about 40 N is applied, whereas in the processing method of the present invention, about 3 N (about 8 N in the conventional method).
%) And very stable.
【００１２】実施例 参考例で用いたのと同じ加工装置を用い、直径１８０ｍ
ｍ、厚さ０．７５ｍｍのシリコンウエーハ試料に、それ
ぞれ送り速度を０．５〜６．０ｍｍ／分の範囲で変え、
他の条件は参考例と同様にして３．０ｍｍの穴あけを行
った。この結果をグラフとして図３に曲線Ｂとして示
す。なお、比較のために、高周波振動を付加しない場合
の結果を曲線Ａとして示す。この図から明らかなよう
に、高周波振動を付加しない場合は、送り速度１．５ｍ
ｍ／分が限界であるのに対し、本発明方法の場合は送り
速度６．０ｍｍ／分まで安定した加工が可能であった。
また、穴のエッジ部のチッピングを観察したところ、送
り速度０．５ｍｍ／分では両者の間に差は認められない
が、前者は送り速度１．５ｍｍ／分で著しいチッピング
を生じるのに対し、後者は送り速度６．０ｍｍ／分でも
ほとんどチッピングは認められなかった。Example Using the same processing apparatus as used in the reference example, the diameter was 180 m.
m, the feed rate was changed in a range of 0.5 to 6.0 mm / min for a silicon wafer sample having a thickness of 0.75 mm,
Other conditions were the same as in the reference example, and a hole of 3.0 mm was drilled. The result is shown as a curve B in FIG. For comparison, a result when no high-frequency vibration is added is shown as a curve A. As is clear from this figure, when no high-frequency vibration is applied, the feed speed is 1.5 m.
While m / min is the limit, in the case of the method of the present invention, stable processing was possible up to a feed rate of 6.0 mm / min.
When the chipping of the edge of the hole was observed, no difference was observed between the two at a feed rate of 0.5 mm / min, whereas the former caused significant chipping at a feed rate of 1.5 mm / min. In the latter, almost no chipping was observed even at a feed rate of 6.0 mm / min.
【図１】 本発明方法に用いる加工装置の構造の１例を
示す側面図。FIG. 1 is a side view showing an example of the structure of a processing apparatus used in the method of the present invention.
【図２】 従来方法と本発明方法における軸方向加工力
を示すグラフ。FIG. 2 is a graph showing the axial working force in the conventional method and the method of the present invention.
【図３】 従来方法と本発明方法における送り速度と軸
方向加工力との関係を示すグラフ。FIG. 3 is a graph showing a relationship between a feed rate and an axial processing force in the conventional method and the method of the present invention.
１ ダイヤモンドコアドリル ２ 発振器 ３ ホーン ４ 支持部 ５ 高周波発生装置 ６ 試料 DESCRIPTION OF SYMBOLS 1 Diamond core drill 2 Oscillator 3 Horn 4 Support part 5 High frequency generator 6 Sample
───────────────────────────────────────────────────── フロントページの続き (72)発明者 岳 義弘 福岡県春日市大谷１丁目36番地 株式会 社岳将内 (72)発明者 柳本 秀樹 福岡県浮羽郡田主丸町大字竹野210番地 ノリタケダイヤ株式会社内 審査官 大河原 裕 (56)参考文献 特開 平10−202647（ＪＰ，Ａ) 特開 平３−256658（ＪＰ，Ａ) 特開 平９−220716（ＪＰ，Ａ) 特開 平10−71612（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) B28D 1/14 B23B 35/00 B24B 1/04 B28D 5/02──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yoshihiro Take, 1-36 Otani, Kasuga-shi, Fukuoka Co., Ltd. Hideki Yanagimoto (72) Inventor Hideki Yanagimoto 210, Takeshi, Tanushimaru-cho, Ukiha-gun, Fukuoka Prefecture Examiner Hiroshi Okawara (56) References JP-A-10-202647 (JP, A) JP-A-3-256658 (JP, A) JP-A-9-220716 (JP, A) JP-A 10-71612 ( JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) B28D 1/14 B23B 35/00 B24B 1/04 B28D 5/02
Claims (1)
ドリルによりケイ素単結晶に穴あけ加工を施すに当り、
周波数６０±１ｋＨｚ、振幅１〜５μｍの条件下、送り
速度２．０〜６．０ｍｍ／分で行うことを特徴とする高
速穴あけ加工方法。1. When drilling a silicon single crystal with a diamond core drill to which high-frequency vibration is applied,
A high-speed drilling method characterized in that the drilling is performed at a feed rate of 2.0 to 6.0 mm / min under conditions of a frequency of 60 ± 1 kHz and an amplitude of 1 to 5 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9008413A JP2820400B2 (en) | 1997-01-21 | 1997-01-21 | Drilling method for silicon single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9008413A JP2820400B2 (en) | 1997-01-21 | 1997-01-21 | Drilling method for silicon single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10202648A JPH10202648A (en) | 1998-08-04 |
| JP2820400B2 true JP2820400B2 (en) | 1998-11-05 |
Family
ID=11692465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9008413A Expired - Lifetime JP2820400B2 (en) | 1997-01-21 | 1997-01-21 | Drilling method for silicon single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2820400B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011042057A1 (en) * | 2009-10-08 | 2011-04-14 | Komax Holding Ag | Device and method for removing coatings from solar modules |
| JP6268764B2 (en) * | 2013-06-17 | 2018-01-31 | 株式会社ジェイテクト | Vibration cutting apparatus and vibration cutting method |
| CN114347285B (en) * | 2022-01-19 | 2022-09-13 | 重庆臻宝实业有限公司 | Deep and micropore processing method of monocrystalline silicon material |
-
1997
- 1997-01-21 JP JP9008413A patent/JP2820400B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10202648A (en) | 1998-08-04 |
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