JP2814795B2 - Manufacturing method of quartz glass - Google Patents

Manufacturing method of quartz glass

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Publication number
JP2814795B2
JP2814795B2 JP3279635A JP27963591A JP2814795B2 JP 2814795 B2 JP2814795 B2 JP 2814795B2 JP 3279635 A JP3279635 A JP 3279635A JP 27963591 A JP27963591 A JP 27963591A JP 2814795 B2 JP2814795 B2 JP 2814795B2
Authority
JP
Japan
Prior art keywords
sample
quartz glass
temperature
matrix
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3279635A
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Japanese (ja)
Other versions
JPH05116969A (en
Inventor
潤 高野
和博 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
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Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B32/00Thermal after-treatment of glass products not provided for in groups C03B19/00, C03B25/00 - C03B31/00 or C03B37/00, e.g. crystallisation, eliminating gas inclusions or other impurities; Hot-pressing vitrified, non-porous, shaped glass products
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00Other methods of shaping glass
    • C03B19/06Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00Other methods of shaping glass
    • C03B19/06Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
    • C03B19/066Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction for the production of quartz or fused silica articles
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B20/00Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、紫外線リソグラフィー
等の装置に使われる光学素子(例えばレンズ)に有用な
石英ガラスの製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing quartz glass useful for an optical element (for example, a lens) used in an apparatus such as ultraviolet lithography.

【0002】[0002]

【従来の技術】この種のガラスは、高度に均質な屈折率
分布を持つことが不可欠である。ガラスの屈折率分布が
均質にならない主な原因は、ガラスを合成する際に原料
粒子の不完全溶融によって生ずる粒状構造や、ガラスの
ゆらぎなどによって導入される脈理と呼ばれる成長縞等
を含むことにある。これらの因子は、屈折率のばらつき
(均質性)がΔn=10-4程度の目視で認められるほど
の不均質分布をもたらす。例えば、カメラ用のレンズに
使用されるガラスは、目視で不均質部分が認められない
程度に均質であればよい。そこで、Δn=10-4程度の
不均質分布を取り除くため、ガラスの軟化点が比較的低
い一般の光学用ガラス(例えばリン酸塩系ガラス)で
は、高温に再加熱して機械的に攪拌することにより均質
化を行っている。
2. Description of the Related Art It is essential that this kind of glass has a highly uniform refractive index distribution. The main causes of non-uniformity of the refractive index distribution of glass include the inclusion of a granular structure caused by incomplete melting of raw material particles when synthesizing glass, and growth fringes called stria introduced by fluctuations in glass. It is in. These factors result in a non-uniform distribution such that the refractive index variation (homogeneity) is visually observable, of the order of Δn = 10 −4 . For example, the glass used for the camera lens may be homogeneous to such an extent that an inhomogeneous portion is not visually observed. Therefore, in order to remove the inhomogeneous distribution of about Δn = 10 −4, general optical glass (for example, phosphate glass) having a relatively low softening point is reheated to a high temperature and mechanically stirred. In this way, homogenization is performed.

【0003】ところが、石英ガラスでは、常圧で高温に
加熱すると粘度が機械的攪拌を行なうのに充分な程度に
低下するより前に昇華が著しくなるので、攪拌によって
均質化することは困難である。そこで、機械的攪拌のか
わりに高圧のアルゴンガス雰囲気中で熱処理を行なう均
質化方法が用いられている。例えば、2気圧以上の圧力
のアルゴンガス(Ar)雰囲気中で1800℃以上に加熱する
ことにより、脈理等の目視で認められる程度の屈折率の
不均質分布を取り除いている(特公平3-17775号参
照)。こうして均質化されたガラスの均質性は、Δn=
10-5程度である。
However, when quartz glass is heated to a high temperature at normal pressure, sublimation becomes significant before the viscosity is reduced to a level sufficient for mechanical stirring, and it is difficult to homogenize by stirring. . Therefore, a homogenization method in which heat treatment is performed in a high-pressure argon gas atmosphere instead of mechanical stirring is used. For example, by heating to 1800 ° C. or more in an argon gas (Ar) atmosphere at a pressure of 2 atm or more, a heterogeneous distribution of the refractive index such as striae, which is visually observed, is removed (Japanese Patent Publication No. 17775). The homogeneity of the glass thus homogenized is Δn =
It is about 10 -5 .

【0004】ところで、近年の紫外線リソグラフィー装
置に使用される光学素子は、紫外域の高透過率性が求め
られるため、石英ガラスが使用される。
Meanwhile, quartz glass is used for an optical element used in a recent ultraviolet lithography apparatus because high transmittance in an ultraviolet region is required.

【0005】[0005]

【発明が解決しようとする課題】最近、この石英ガラス
に対して、屈折率のばらつきがΔn=10-6程度以下の
光学的に均質なものが求められている。そのため、熱処
理の条件(圧力、処理温度、降温時間等)を調整するこ
とにより、光学的に均質な石英ガラスを得ようとする試
みがなされている。
Recently, there has been a demand for an optically uniform quartz glass having a refractive index variation of about Δn = 10 −6 or less. For this reason, attempts have been made to obtain optically homogeneous quartz glass by adjusting the conditions of heat treatment (pressure, processing temperature, cooling time, etc.).

【0006】例えば、大気圧下で1800℃〜2200℃に昇温
し熱処理を行なうと、試料(熱処理前の石英ガラス)中
央部の屈折率の不均一分布は少なくなる。しかしなが
ら、今度は試料の周辺部にΔn=10-4程度の変質層と
呼ばれる不均質な部分ができてしまう。この部分をレン
ズとして使用することはできなので、中央部のみを削り
取って用いているしかないが、これでは、下記のような
問題が生じる。 試料である石英ガラスは高価なものであり、その試料
のうち中央部のみレンズとして使用するのでは、最終製
品はさらに高価なものとなる。 近年の紫外線リソグラフィーでは、レンズの解像度を
高める必要があり、レンズを大口径化してNAを大きく
することが急務とされているが、中央部のみの均質化で
は、大口径のレンズを製造することができない。 変質層が、中央部の屈折率の分布にも悪影響を与える
恐れがある。
For example, when the temperature is raised to 1800 ° C. to 2200 ° C. under the atmospheric pressure and the heat treatment is performed, the uneven distribution of the refractive index in the center of the sample (quartz glass before the heat treatment) is reduced. However, this time, an inhomogeneous portion called an altered layer of about Δn = 10 −4 is formed at the periphery of the sample. Since this part can be used as a lens, only the center part is cut off and used, but this causes the following problem. Quartz glass, which is a sample, is expensive, and if only the central part of the sample is used as a lens, the final product will be more expensive. In recent UV lithography, it is necessary to increase the resolution of the lens, and it is urgent to increase the NA by increasing the diameter of the lens. However, homogenizing only the central part requires manufacturing a large-diameter lens. Can not. The altered layer may also adversely affect the distribution of the refractive index at the center.

【0007】本発明の目的は、このような問題点を解決
することにあり、変質層のない、光学的に均質な(Δn
=10-6程度以下の)大きな塊の石英ガラスを製造する
ことにある。
SUMMARY OF THE INVENTION An object of the present invention is to solve such a problem and to provide an optically homogeneous (Δn
= 10 −6 or less).

【0008】[0008]

【課題を解決するための手段】本発明者らは、この変質
層の原因を調べた。まず、熱処理の降温時の試料の温度
分布を調べところ、図1(a) のような温度分布をもつこ
とがわかった。図1において、試料内の線は等温線を示
す。熱処理後は、試料全体が均一に降温していくことが
望ましいが、降温速度が充分に遅い場合でも試料の外側
と内側で降温速度がちがうため、降温後に図1(a) のよ
うな温度分布ができ、それが屈折率の分布として現れ
る。特に、厚み方向(レンズとして用いるときの光軸方
向)からみたときの試料周辺部には等温線の本数は多く
なり、この部分に屈折率の値の大きな変質層が形成され
る。
The present inventors have investigated the cause of this altered layer. First, the temperature distribution of the sample when the temperature was lowered during the heat treatment was examined, and it was found that the sample had a temperature distribution as shown in FIG. In FIG. 1, the line in the sample indicates an isotherm. After the heat treatment, it is desirable that the temperature of the entire sample be lowered uniformly. However, even if the cooling rate is sufficiently low, the cooling rate differs between the outside and the inside of the sample. Which appears as a distribution of the refractive index. In particular, the number of isotherms increases around the sample when viewed from the thickness direction (the optical axis direction when used as a lens), and an altered layer having a large refractive index value is formed in this portion.

【0009】さらに、試料内部からのガス放出、雰囲気
からのガス拡散、もしくは熱処理外型内に存在する不純
物の試料内への拡散によっても変質層が形成されること
がわかった。そこで、本発明者らは、熱処理をする際に
SiO2の粉末又は塊で作った母型の中に試料を置くことに
より、試料である石英ガラスの広い範囲で均質性の良化
が実現することを見いだした。さらに、このような母型
を用いれば、試料を外型および雰囲気と直接触れさせず
に熱処理をすることが可能であり、変質層の形成が抑え
られることを見いだし、本発明を成すに至った。
Further, it has been found that the deteriorated layer is also formed by gas release from the inside of the sample, gas diffusion from the atmosphere, or diffusion of impurities present in the heat treatment outer mold into the sample. Therefore, the present inventors, when performing the heat treatment,
By placing the sample in a matrix made of SiO 2 powder or lump, it has been found that homogeneity can be improved over a wide range of the quartz glass sample. Furthermore, if such a matrix is used, it is possible to perform a heat treatment without bringing the sample into direct contact with the outer mold and the atmosphere, and it has been found that the formation of the altered layer is suppressed, leading to the present invention. .

【0010】従って、本発明は、第1に「屈折率のばら
つきΔn=10-5程度の光学的に不均質な石英ガラス」
を、SiO2の粉末又は塊で作った母型の中で0〜10kg/cm2
の加圧下で熱処理することを特徴とする「Δn=10-6
程度以下の光学的に均質な石英ガラス」の製造方法を提
供する(請求項1)。本発明は第2に、上記の製造方法
において、処理する温度は1800℃以上2200℃以下、雰囲
気はHe、N2、Ar、H2もしくはその混合ガスであることを
特徴とする「光学的に均質な石英ガラス」の製造方法を
提供する(請求項2)。
Accordingly, the present invention firstly provides "optically inhomogeneous quartz glass having a variation in refractive index of about Δn = 10 -5 ".
In a mold made of powder or lump of SiO 2 from 0 to 10 kg / cm 2
"Δn = 10 -6 "
The present invention provides a method for producing an optically homogeneous quartz glass of a degree or less (claim 1). Secondly, the present invention is characterized in that in the above-mentioned production method, the treatment temperature is 1800 ° C. or more and 2200 ° C. or less, and the atmosphere is He, N 2 , Ar, H 2 or a mixed gas thereof. A method for producing "homogeneous quartz glass" is provided (claim 2).

【0011】[0011]

【作用】試料である石英ガラスと母型であるSiO2は、高
温で保持しているときには共に熔融状態にあり、これら
の物性は非常に近い。そこで、本発明において、試料と
母型の降温時の温度分布は図1(b) のようになっている
ものと推測される。つまり、変質層を形成すると思われ
る温度勾配の急な部分(等温線の多い部分)は母型のSi
O2の方にあり、試料の石英ガラスは中央部から周辺部の
広範囲にわたって均質化がなされるものと考えられる。
The quartz glass as a sample and the SiO 2 as a matrix are both in a molten state when kept at a high temperature, and their physical properties are very close. Therefore, in the present invention, it is assumed that the temperature distribution of the sample and the matrix at the time of temperature decrease is as shown in FIG. 1 (b). In other words, the steep part of the temperature gradient (the part with many isotherms) that is considered to form the altered layer is
There toward O 2, quartz glass samples is considered to homogenization is performed over a wide range of the peripheral portion from the central portion.

【0012】あるいは、母型には微小の気泡が無数混入
しているが、この気泡が断熱効果を持つことにより試料
内の温度の分布が緩和されるという推測もなされてい
る。いずれにしろ、本発明に従って熱処理を行なった後
は、試料のほぼ全体にわたって光学的に均質な石英ガラ
スが得られる。母型に用いるSiO2の形状は、たとえば、
ゾル−ゲル法により製造した合成石英粉、カレット(粉
砕したもの)、一旦熔融した塊、のいずれでもよい。な
お、一旦熔融したSiO2の塊であれば、母型の体積変化が
少ないので好ましい。
Alternatively, it has been speculated that countless minute bubbles are mixed in the matrix, and that these bubbles have a heat insulating effect, thereby reducing the temperature distribution in the sample. In any case, after heat treatment according to the invention, an optically homogeneous quartz glass is obtained over substantially the entire sample. The shape of SiO 2 used for the matrix is, for example,
Any of synthetic quartz powder produced by the sol-gel method, cullet (crushed), and a lump once melted may be used. It should be noted that a mass of SiO 2 once melted is preferable because the volume change of the matrix is small.

【0013】また、母型のSiO2にNa、Ca等の不純物が混
在していると、これが試料内に拡散し試料が汚染されて
しまうため、SiO2の純度は試料と同じかそれ以上である
ことが望ましい。処理条件としては、処理する温度(保
持温度)は軟化点以上であれば問題ないが、処理時間に
よる生産性を鑑みて軟化点より 150℃以上高い方が好ま
しい。絶対値でいうと、一般的には1800〜2200℃程度が
好ましい。保持時間、降温速度は試料の大きさにより異
なる。処理する雰囲気は、He、N2、Ar、H2などの不活性
ガスもしくはその混合ガスが好ましい。
Further, if impurities such as Na and Ca are mixed in the matrix SiO 2 , the impurities diffuse into the sample and contaminate the sample, so that the purity of the SiO 2 is equal to or higher than that of the sample. Desirably. There is no problem with the processing conditions as long as the processing temperature (holding temperature) is higher than the softening point, but it is preferable that the temperature be higher than the softening point by 150 ° C. or more in view of the productivity due to the processing time. In terms of absolute value, generally, about 1800 to 2200 ° C. is preferable. The holding time and the temperature drop rate vary depending on the size of the sample. The atmosphere for the treatment is preferably an inert gas such as He, N 2 , Ar, H 2 or a mixed gas thereof.

【0014】高温で保持するときに母型は熔融した状態
になるので、通常は試料と母型をカーボングラファイト
製の外型に入れる。また、熱処理後に外型と母型がはず
せなくなるのを防ぐために外型の内壁にカーボンファイ
バー製のフェルトを用いることもある。屈折率の不均一
分布の原因の一つである、降温時の試料内の温度分布
は、降温速度を遅くすることによってある程度小さく
(等温線の本数を少なくする)ことができる。しかし、
降温速度を遅くすることは、試料を高温で長時間保持す
ることにつながり、 ・試料が失透してしまう危険性がある。 ・工業的にみて、生産効率が低下する。 との理由から、例えば 5〜200 ℃/hour程度が好まし
い。
Since the matrix becomes molten when held at a high temperature, the sample and the matrix are usually placed in an outer mold made of carbon graphite. In addition, a carbon fiber felt may be used for the inner wall of the outer mold in order to prevent the outer mold and the mother mold from being removed after the heat treatment. The temperature distribution in the sample at the time of temperature decrease, which is one of the causes of the non-uniform distribution of the refractive index, can be reduced to some extent (the number of isotherms is reduced) by decreasing the temperature decrease rate. But,
Slowing the rate of cooling leads to holding the sample at a high temperature for a long time. ・ There is a risk that the sample may be devitrified.・ In terms of industry, production efficiency decreases. For example, about 5 to 200 ° C./hour is preferable.

【0015】なお、本発明の石英ガラスの製造方法で
は、Δn=10-4程度である粒状構造や脈理を取り除く
ことはできない。従って、原料(試料)としてΔn=1
-5程度の石英ガラスを用いるのである。本発明の製造
方法によって得られた石英ガラスは、紫外線リソグラフ
ィー装置のレンズとして用いられるほか、カメラ用レン
ズ、プリズム等、あらゆる用途に有効である。
In the method for producing quartz glass of the present invention, it is not possible to remove a granular structure or striae of about Δn = 10 −4 . Therefore, Δn = 1 as a raw material (sample)
About 0 -5 quartz glass is used. The quartz glass obtained by the production method of the present invention is effective for all uses such as a lens for a camera and a prism in addition to being used as a lens of an ultraviolet lithography apparatus.

【0016】以下、実施例により詳しく説明するが、本
発明はこれらに限られるものではない。
Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited thereto.

【0017】[0017]

【実施例1】図2は、本実施例を実施するための製造装
置の概略断面図であり、4はヒーター、5は断熱材を設
けた加熱炉である。カーボングラファイト製の外型の内
壁はカーボンファイバーフェルト6で覆われている。試
料はφ200mm,t50mm の石英ガラスである。この試料の上
下面に20mm、側面に100mm のSiO2粉がくるように外型に
セットした。外型を加熱炉にセットし、N2雰囲気、5.0k
g/cm2 加圧下でヒーターにより昇温した。1900℃で2時
間保持し、その後50℃/hで降温していった。この試料
を、内部歪を取り除く目的でアニーリングした後、干渉
計で均質性を測定した。その結果、変質層の形成はほと
んど確認されず、試料のうちφ150 mmの部分のΔnは
2.6×10-5から 2.0×10-6になった。
Embodiment 1 FIG. 2 is a schematic sectional view of a manufacturing apparatus for carrying out the present embodiment. Reference numeral 4 denotes a heater, and reference numeral 5 denotes a heating furnace provided with a heat insulating material. The inner wall of the outer mold made of carbon graphite is covered with carbon fiber felt 6. The sample is quartz glass of φ200mm, t50mm. The sample was set in an outer mold so that SiO 2 powder of 20 mm was placed on the upper and lower surfaces and 100 mm of SiO 2 powder was placed on the side surfaces. Set the outer mold in a heating furnace, N 2 atmosphere, 5.0 K
The temperature was raised by a heater under g / cm 2 pressure. The temperature was maintained at 1900 ° C. for 2 hours, and then the temperature was lowered at 50 ° C./h. After annealing the sample for the purpose of removing internal strain, the homogeneity was measured with an interferometer. As a result, formation of a deteriorated layer was hardly confirmed, and Δn of a portion of φ150 mm in the sample was
From 2.6 × 10 -5 to 2.0 × 10 -6 .

【0018】[0018]

【実施例2】同じ初期状態の2つの試料(φ200mm,t150
mm)を、側面にSiO2粉がそれぞれ50mmと100mm になるよ
うに外型にセットし、N2雰囲気、5.0kg/cm2加圧下で昇
温した。1900℃で2時間保持した後、50℃/hで降温して
いった。この試料を、内部歪を取り除く目的でアニーリ
ングした後に干渉計で均質性を測定したところ、φ150
mmの部分の均質性Δnは 2.6×10-5からそれぞれ、 5.5
×10-6と 3.0×10-6になった。
Embodiment 2 Two samples (φ200 mm, t150) in the same initial state
mm) was set on an outer mold so that the SiO 2 powder on the side surface became 50 mm and 100 mm, respectively, and the temperature was raised under a N 2 atmosphere and a pressure of 5.0 kg / cm 2 . After maintaining at 1900 ° C for 2 hours, the temperature was lowered at 50 ° C / h. This sample was annealed for the purpose of removing internal strain and then measured for homogeneity with an interferometer.
The homogeneity Δn of the part of mm is from 2.6 × 10 -5 to 5.5
× 10 -6 and 3.0 × 10 -6 .

【0019】[0019]

【実施例3】図3は、試料の直径/高さを種々に変えて
従来の方法(図1(a) の方法)と、実施例の方法とを実
行した結果、得られた製造物のΔnを示すグラフであ
る。このグラフで横軸は直径と高さの比であり、縦軸は
均質性である。このグラフによれば、厚みのある試料で
もΔnが10-6程度以下と、光学的に均質な石英ガラス
が得られることがわかる。
EXAMPLE 3 FIG. 3 shows the results obtained by executing the conventional method (the method of FIG. 1 (a)) and the method of the example by changing the sample diameter / height variously. It is a graph which shows (DELTA) n. In this graph, the horizontal axis is the ratio of diameter to height, and the vertical axis is homogeneity. According to this graph, it can be seen that an optically uniform quartz glass can be obtained with Δn of about 10 −6 or less even with a thick sample.

【0020】[0020]

【発明の効果】以上のとおり、本発明によれば、母型の
形状を変化させることによって降温時の試料内の温度分
布を少なくすることが可能である。従って、試料の直径
/高さにかかわらず、試料全体に光学的に均質な石英ガ
ラスが得られる。例えば、径の大きな試料を用いても試
料周辺部に変質層が形成されることはなくΔn=10-6
程度以下の光学的に均質な石英ガラスが試料のほぼ全体
にわたって得られ、大口径のレンズを製造することが可
能である。
As described above, according to the present invention, it is possible to reduce the temperature distribution in the sample when the temperature is lowered by changing the shape of the matrix. Therefore, regardless of the diameter / height of the sample, an optically homogeneous quartz glass is obtained throughout the sample. For example, even if a sample having a large diameter is used, no altered layer is formed around the sample, and Δn = 10 −6.
Substantially less optically homogeneous quartz glass is obtained over nearly the entire sample, making it possible to produce large diameter lenses.

【0021】また、変質層の部分はエキシマレーザーを
照射すると蛍光を発することがあったが、本発明の製造
方法によれば蛍光を発することのない石英ガラスが提供
される。
In some cases, the altered layer emits fluorescence when irradiated with an excimer laser. However, according to the manufacturing method of the present invention, quartz glass which does not emit fluorescence is provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 石英ガラスの降温時の温度分布を示す図であ
る。
FIG. 1 is a diagram showing a temperature distribution when the temperature of quartz glass is lowered.

【図2】 本発明の一実施例を実施するための製造装置
の概略断面図である。
FIG. 2 is a schematic sectional view of a manufacturing apparatus for carrying out one embodiment of the present invention.

【図3】 均質性の測定結果を示すグラフである。FIG. 3 is a graph showing a measurement result of homogeneity.

【主要部分の符号の説明】[Description of Signs of Main Parts]

1 試料(熱処理前の石英ガラス) 2 母型(SiO2) 3 外型 4 ヒーター 5 加熱炉 6 フェルトReference Signs List 1 sample (quartz glass before heat treatment) 2 matrix (SiO 2 ) 3 outer mold 4 heater 5 heating furnace 6 felt

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 「屈折率のばらつきΔn=10-5程度の
光学的に不均質な石英ガラス」を、SiO2の粉末又は塊で
作った母型の中で0〜10kg/cm2の加圧下で熱処理するこ
とを特徴とする「Δn=10-6程度以下の光学的に均質
な石英ガラス」の製造方法。
1. An optically inhomogeneous quartz glass having a refractive index variation of Δn = about 10 −5 is applied to a matrix of 0 to 10 kg / cm 2 in a matrix made of powder or lump of SiO 2. A method for producing "optically homogeneous quartz glass of about Δn = about 10 -6 or less", characterized by heat-treating under pressure.
【請求項2】 特許請求の範囲第1項において、処理す
る温度は1800℃以上2200℃以下、雰囲気はHe、N2、Ar、
H2もしくはその混合ガスであることを特徴とする「均質
な石英ガラス」の製造方法。
2. The method according to claim 1, wherein the processing temperature is 1800 ° C. or more and 2200 ° C. or less, and the atmosphere is He, N 2 , Ar,
Method for producing a "homogeneous quartz glass", wherein H 2 or a mixed gas thereof.
JP3279635A 1991-10-25 1991-10-25 Manufacturing method of quartz glass Expired - Lifetime JP2814795B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3279635A JP2814795B2 (en) 1991-10-25 1991-10-25 Manufacturing method of quartz glass

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3279635A JP2814795B2 (en) 1991-10-25 1991-10-25 Manufacturing method of quartz glass

Publications (2)

Publication Number Publication Date
JPH05116969A JPH05116969A (en) 1993-05-14
JP2814795B2 true JP2814795B2 (en) 1998-10-27

Family

ID=17613731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3279635A Expired - Lifetime JP2814795B2 (en) 1991-10-25 1991-10-25 Manufacturing method of quartz glass

Country Status (1)

Country Link
JP (1) JP2814795B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3064857B2 (en) 1995-03-28 2000-07-12 株式会社ニコン Optical member for optical lithography and method for producing synthetic quartz glass
DE69629119T2 (en) * 1995-09-12 2004-04-15 Corning Inc. POT TO MAKE SILICAGLAS
DE69635662T2 (en) * 1995-09-12 2006-08-10 Corning Inc. Method and furnace for producing fused silica fused silica
DE69634667T2 (en) * 1995-09-12 2006-04-27 Corning Inc. BOULE OSCILLATION PATTERN FOR THE PRODUCTION OF MELTED QUARTZ GLASS
JP6532269B2 (en) * 2015-04-15 2019-06-19 信越石英株式会社 Method of manufacturing synthetic quartz glass
CN113387550A (en) * 2021-07-03 2021-09-14 四川神光石英科技有限公司 Method for improving uniformity of quartz glass

Also Published As

Publication number Publication date
JPH05116969A (en) 1993-05-14

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