JP2806357B2 - スタックモジュール - Google Patents
スタックモジュールInfo
- Publication number
- JP2806357B2 JP2806357B2 JP8096410A JP9641096A JP2806357B2 JP 2806357 B2 JP2806357 B2 JP 2806357B2 JP 8096410 A JP8096410 A JP 8096410A JP 9641096 A JP9641096 A JP 9641096A JP 2806357 B2 JP2806357 B2 JP 2806357B2
- Authority
- JP
- Japan
- Prior art keywords
- stack module
- heat
- semiconductor chip
- substrate
- heat radiating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
- H01L2225/1023—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1047—Details of electrical connections between containers
- H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1094—Thermal management, e.g. cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
- H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
ル、特に、半導体チップを搭載した基板を複数枚積み重
ねたスタックモジュールに関する。
を参照して詳細に説明する。
3に示すスタックモジュールは、基板2に搭載された半
導体チップ1(または基板2)の上(または下)に放熱
板8が接着固定されたものが、基板接続用バンプ6を用
いて4段にスタックされている。(例えば、特開平5−
190712号公報参照)
クモジュールは、半導体チップ(または基板)と熱膨張
係数の異なる放熱板をするので、前述の接着固定された
部分に熱応力が生じ、熱サイクル寿命が短かいという欠
点があった。また、放熱板が平板であり放熱面積が少な
いので、冷却効率を高めるためには、基板の外部まで放
熱板を広げなければならないから、スタックモジュール
を小型にすることが困難であるという欠点があった。
ジュールは、半導体チップをフリップチップ実装した基
板を積層したモジュールの前記半導体チップと隣接する
前記基板との間に波形状の放熱部材を有する。
体チップをフリップチップ実装した基板を積層したモジ
ュールの前記半導体チップと隣接する前記基板との間に
ヒートパイプを有する。
して詳細に説明する。
図である。図1に示すスタックモジュールは、半導体チ
ップ1が実装された実装基板2a〜2dを基板接続用バ
ンプ6を用いて4段にスタックし、実装基板2b〜2d
の半導体チップ1と実装基板2a〜2cの裏面との間に
波形状の銅製の放熱部材5a〜5cが熱的に、その弾力
で接触するように設置する。
冷却効果が大であり、放熱部材5a〜5cはどこにも接
着されていないので、熱応力が発生しない。
図である。図2に示すスタックモジュールは、図1に示
した放熱部材5a〜5cの代りにヒートパイプ7a〜7
cを利用している。半導体チップ1から生じた熱は、ヒ
ートパイプ7a〜7c中の溶剤を気化させ、この気化熱
によって冷却を行なうので、空冷が困難な環境,例えば
真空中においても効率よく冷却できる。
放熱板を接着する代りに、波形状の放熱部材または、ヒ
ートパイプを用い、発熱部分に接触させるようにしたの
で、熱応力が発生せず、熱サイクル寿命を長くできると
いう効果がある。
Claims (6)
- 【請求項1】 半導体チップをフリップチップ実装した
基板を積層したモジュールの前記半導体チップと隣接す
る前記基板との間に波形状の放熱部材を有することを特
徴とするスタックモジュール。 - 【請求項2】 半導体チップをフリップチップ実装した
基板を積層したモジュールの前記半導体チップと隣接す
る前記基板との間にヒートパイプを有することを特徴と
するスタックモジュール。 - 【請求項3】 半導体チップが実装された実装基板を基
板接続用バンプを用いて複数段にスタックし、前記実装
基板の半導体チップと前記実装基板の裏面との間に放熱
部材を熱的にその弾力で接触するように設置することを
特徴とするスタックモジュール。 - 【請求項4】 前記放熱部材が波形状である請求項3記
載のスタックモジュール。 - 【請求項5】 前記放熱部材の材質が銅である請求項3
記載のスタックモジュール。 - 【請求項6】 前記放熱部材がヒートパイプである請求
項3記載のスタックモジュール。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8096410A JP2806357B2 (ja) | 1996-04-18 | 1996-04-18 | スタックモジュール |
TW86105003A TW369708B (en) | 1996-04-18 | 1997-04-17 | Stack module |
KR1019970014542A KR100225659B1 (ko) | 1996-04-18 | 1997-04-18 | 스택 모듈 |
US08/844,320 US5883426A (en) | 1996-04-18 | 1997-04-18 | Stack module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8096410A JP2806357B2 (ja) | 1996-04-18 | 1996-04-18 | スタックモジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09283697A JPH09283697A (ja) | 1997-10-31 |
JP2806357B2 true JP2806357B2 (ja) | 1998-09-30 |
Family
ID=14164208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8096410A Expired - Lifetime JP2806357B2 (ja) | 1996-04-18 | 1996-04-18 | スタックモジュール |
Country Status (4)
Country | Link |
---|---|
US (1) | US5883426A (ja) |
JP (1) | JP2806357B2 (ja) |
KR (1) | KR100225659B1 (ja) |
TW (1) | TW369708B (ja) |
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JPH10294423A (ja) * | 1997-04-17 | 1998-11-04 | Nec Corp | 半導体装置 |
US6274929B1 (en) * | 1998-09-01 | 2001-08-14 | Texas Instruments Incorporated | Stacked double sided integrated circuit package |
US6072233A (en) | 1998-05-04 | 2000-06-06 | Micron Technology, Inc. | Stackable ball grid array package |
USRE43112E1 (en) | 1998-05-04 | 2012-01-17 | Round Rock Research, Llc | Stackable ball grid array package |
US6297548B1 (en) | 1998-06-30 | 2001-10-02 | Micron Technology, Inc. | Stackable ceramic FBGA for high thermal applications |
US6051887A (en) * | 1998-08-28 | 2000-04-18 | Medtronic, Inc. | Semiconductor stacked device for implantable medical apparatus |
KR20000029054A (ko) * | 1998-10-15 | 2000-05-25 | 이데이 노부유끼 | 반도체 장치 및 그 제조 방법 |
US6329713B1 (en) * | 1998-10-21 | 2001-12-11 | International Business Machines Corporation | Integrated circuit chip carrier assembly comprising a stiffener attached to a dielectric substrate |
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JP3575001B2 (ja) | 1999-05-07 | 2004-10-06 | アムコー テクノロジー コリア インコーポレーティド | 半導体パッケージ及びその製造方法 |
US6896039B2 (en) * | 1999-05-12 | 2005-05-24 | Thermal Corp. | Integrated circuit heat pipe heat spreader with through mounting holes |
US6302192B1 (en) * | 1999-05-12 | 2001-10-16 | Thermal Corp. | Integrated circuit heat pipe heat spreader with through mounting holes |
USRE40112E1 (en) | 1999-05-20 | 2008-02-26 | Amkor Technology, Inc. | Semiconductor package and method for fabricating the same |
JP3398721B2 (ja) * | 1999-05-20 | 2003-04-21 | アムコー テクノロジー コリア インコーポレーティド | 半導体パッケージ及びその製造方法 |
JP3619395B2 (ja) | 1999-07-30 | 2005-02-09 | 京セラ株式会社 | 半導体素子内蔵配線基板およびその製造方法 |
US6586836B1 (en) * | 2000-03-01 | 2003-07-01 | Intel Corporation | Process for forming microelectronic packages and intermediate structures formed therewith |
US6424031B1 (en) * | 2000-05-08 | 2002-07-23 | Amkor Technology, Inc. | Stackable package with heat sink |
US6522018B1 (en) | 2000-05-16 | 2003-02-18 | Micron Technology, Inc. | Ball grid array chip packages having improved testing and stacking characteristics |
US7247932B1 (en) * | 2000-05-19 | 2007-07-24 | Megica Corporation | Chip package with capacitor |
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JPH05190712A (ja) * | 1992-01-16 | 1993-07-30 | Fujitsu Ltd | 半導体装置 |
JP2570605B2 (ja) * | 1993-11-15 | 1997-01-08 | 日本電気株式会社 | 半導体装置 |
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US5883426A (en) | 1999-03-16 |
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KR970072372A (ko) | 1997-11-07 |
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