JP2803123B2 - Superconducting wire - Google Patents
Superconducting wireInfo
- Publication number
- JP2803123B2 JP2803123B2 JP1026095A JP2609589A JP2803123B2 JP 2803123 B2 JP2803123 B2 JP 2803123B2 JP 1026095 A JP1026095 A JP 1026095A JP 2609589 A JP2609589 A JP 2609589A JP 2803123 B2 JP2803123 B2 JP 2803123B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- surface roughness
- superconducting layer
- superconducting
- average surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Description
【発明の詳細な説明】 ［産業上の利用分野 この発明は、超電導線に関するものであり、特に基材
上に酸化物超電導層を形成した超電導線に関するもので
ある。The present invention relates to a superconducting wire, and more particularly to a superconducting wire having an oxide superconducting layer formed on a substrate.
［従来の技術］ 従来から超電導体として、金属系のもの、化合物系の
ものおよびセラミックス系のものが知られており、種々
の用途への適用が研究されている。すなわち、超電導体
は、臨界温度以下の温度に保持されることにより電気抵
抗が零の状態になるのであるが、この特性を利用して高
磁界の発生、大容量の電流の高密度伝送などが試みられ
ている。[Prior Art] Conventionally, metal-based, compound-based, and ceramic-based superconductors have been known, and their application to various applications has been studied. In other words, superconductors are kept at a temperature below the critical temperature and have a zero electrical resistance.However, using this characteristic, high magnetic fields can be generated and high-capacity currents can be transmitted at high density. Attempted.
最近、超電導材料として、セラミックス系のものが超
電導現象を示す臨界温度を高くできる点で脚光を浴びつ
つある。このような超電導材料は、たとえば、長尺の線
状体とすることによって、送配電、各種機器または素子
間の電気的接続、交流用巻線等の用途に用いることがで
きる。In recent years, ceramics-based superconducting materials have been spotlighted in that they can raise the critical temperature at which superconductivity occurs. Such a superconducting material can be used for, for example, power transmission and distribution, electrical connection between various devices or elements, AC windings, and the like by forming a long linear body.
このような線材化の方法として、従来の化合物系の超
電導材料では、ステンレス等の基材または合金のテープ
の上に、スパッタリング法等により超電導材料を形成す
る方法が提案されている。また、このようなテープ状の
基材上に超電導層を形成することにより、容易に優れた
可撓性を得ることができる。As a method for forming such a wire, a method of forming a superconducting material by sputtering or the like on a tape of a substrate or an alloy of stainless steel or the like has been proposed for a conventional compound superconducting material. Further, by forming a superconducting layer on such a tape-shaped substrate, excellent flexibility can be easily obtained.
［発明が解決しようとする課題］ しかしながら、通常の金属テープやセラミックステー
プの上に、セラミックス系超電導材料を形成させた場
合、特に超電導層が１μｍ以下と薄い場合には、優れた
超電導特性を得ることができないという問題があった。[Problems to be Solved by the Invention] However, when a ceramic-based superconducting material is formed on a normal metal tape or ceramic tape, particularly when the superconducting layer is as thin as 1 μm or less, excellent superconducting properties are obtained. There was a problem that it was not possible.
この発明はかかる問題を解消するためなされたもので
あり、優れた超電導特性を示す酸化物超電導層を基材上
に形成した超電導線を提供することにある。The present invention has been made to solve such a problem, and an object of the present invention is to provide a superconducting wire in which an oxide superconducting layer exhibiting excellent superconducting properties is formed on a substrate.
［課題を解決するための手段］ 本発明者等は、かかる従来の問題点を解消するため種
々検討を重ねた結果、基材の表面粗さが酸化物超電導層
の超電導特性に影響することを見い出し、この発明をな
すに至ったものである。[Means for Solving the Problems] The present inventors have conducted various studies in order to solve such conventional problems, and as a result, have found that the surface roughness of the substrate affects the superconducting properties of the oxide superconducting layer. It has been found that the present invention has been made.
この発明は、可撓性を有する基材と、平均表面粗さ
（Ra）が0.05μｍ以下である該基材の表面上に形成され
ている酸化物超電導層とを備えることを特徴とする。The present invention is characterized by comprising a flexible base material and an oxide superconducting layer formed on the surface of the base material having an average surface roughness (Ra) of 0.05 μm or less.
この発明において基材は金属もしくは合金またはセラ
ミックスからなるものを用いることができる。合金の場
合には、Ni基合金であることが好ましい。また、セラミ
ックスである場合には、イットリア安定化ジルコニア
（YSZ）であることが好ましい。In the present invention, a substrate made of a metal, an alloy, or ceramics can be used. In the case of an alloy, a Ni-based alloy is preferable. In the case of ceramics, it is preferably yttria-stabilized zirconia (YSZ).
さらに、この発明において基材は、セラミックスコー
ティング層を有した金属または合金の複数層の構造の基
材であってもよい。Further, in the present invention, the substrate may be a substrate having a multilayer structure of a metal or alloy having a ceramic coating layer.
［作用］ 第２図は、平均表面粗さの大きい基材上に超電導層を
形成したときの膜厚状態を示す模式図であり、第３図
は、平均表面粗さの小さい基材上に超電導層を形成した
ときの膜厚状態を示す模式図である。第２図に示すよう
に、平均表面粗さの大きい基材３上に超電導層１を形成
すること、厚みの薄い部分が多く生じ、この部分での結
合が弱くなり、全体としての臨界温度（Tc）が低下した
り、あるいは臨界電流密度（Jc）が低下したりする。[Function] FIG. 2 is a schematic diagram showing a film thickness state when a superconducting layer is formed on a substrate having a large average surface roughness, and FIG. It is a schematic diagram which shows the film thickness state at the time of forming a superconducting layer. As shown in FIG. 2, forming the superconducting layer 1 on the base material 3 having a large average surface roughness, many portions having a small thickness are generated, the bonding at these portions is weakened, and the critical temperature as a whole ( Tc) decreases, or critical current density (Jc) decreases.
これに対し第３図のように、平均表面粗さの小さい基
材２上に超電導層１を形成すると、このような厚みの薄
い部分が発生せず、臨界温度および臨界電流密度を高め
ることができる。On the other hand, as shown in FIG. 3, when the superconducting layer 1 is formed on the base material 2 having a small average surface roughness, such a thin portion does not occur, and the critical temperature and the critical current density can be increased. it can.
第４図は、平均表面粗さの大きい基材上に超電導層を
形成したときの膜面の平滑状態を示す模式図であり、第
５図は、平均表面粗さの小さい基材上に超電導層を形成
したときの膜面の平滑状態を示す模式図である。第４図
に示すように、平均表面粗さの大きい基材３上に超電導
層１を形成すると、超電導層１の膜面が平滑でなくな
る。これに対し、第５図に示すように、平均表面粗さの
小さい基材２上に超電導層１を形成すると、超電導層１
の膜面も平滑化することができる。FIG. 4 is a schematic diagram showing a smooth state of a film surface when a superconducting layer is formed on a substrate having a large average surface roughness, and FIG. It is a schematic diagram which shows the smooth state of the film surface when a layer is formed. As shown in FIG. 4, when the superconducting layer 1 is formed on the base material 3 having a large average surface roughness, the surface of the superconducting layer 1 becomes not smooth. On the other hand, as shown in FIG. 5, when the superconducting layer 1 is formed on the base material 2 having a small average surface roughness,
Can also be smoothed.
第６図は、平均表面粗さの大きい基材上に超電導層を
形成したときの配向性を示す模式図であり、第７図は、
平均表面粗さの小さい基材上に超電導層を形成したとき
の配向性を示す模式図である。第６図に示すように、平
均表面粗さの大きい基材３上に超電導層１を形成する
と、基材表面の凹凸が影響して、形成された超電導層１
の配向性が悪くなる。これに対し、第７図に示すよう
に、平均表面粗さの小さい基材２上に超電導層１を形成
すると、超電導層１の配向性も良くなる。FIG. 6 is a schematic diagram showing the orientation when a superconducting layer is formed on a substrate having a large average surface roughness, and FIG.
It is a schematic diagram which shows the orientation at the time of forming a superconducting layer on a base material with a small average surface roughness. As shown in FIG. 6, when the superconducting layer 1 is formed on the base material 3 having a large average surface roughness, the formed superconducting layer 1 is affected by irregularities on the surface of the base material.
Orientation becomes worse. On the other hand, as shown in FIG. 7, when superconducting layer 1 is formed on substrate 2 having a small average surface roughness, the orientation of superconducting layer 1 is improved.
この発明では、以上説明したような膜厚平均化効果、
膜面平滑化効果および配向性向上効果により、基材上に
形成された超電導層の超電導特性が向上する。In the present invention, the film thickness averaging effect as described above,
The superconducting properties of the superconducting layer formed on the base material are improved by the film surface smoothing effect and the orientation improving effect.
［実施例］ 表面粗さ（Ra）が40Å、100Å、400Å、1000Åおよび
10000Åのイットリア安定化ジルコニア（YSZ）を準備し
た。なお、表面粗さは、米国SLOAN社製表面計状測定器D
EKTAK3030を使用し測定した。針圧は30mg、測定距離は1
00μｍとした。このYSZのテープの上にRFマグネトロン
スパッタリング法によりY1Ba2Cu3O７−δの超電導膜を
形成した。なお、膜厚は0.5μｍおよび１μｍの２種類
のものを作製した。製膜条件は以下のとおりである。[Example] The surface roughness (Ra) was 40 °, 100 °, 400 °, 1000 ° and
10000 kg of yttria stabilized zirconia (YSZ) was prepared. The surface roughness was measured using a surface profiler D made by SLOAN of the United States.
It measured using EKTAK3030. Needle pressure is 30mg, measurement distance is 1
It was set to 00 μm. A superconducting film of Y 1 Ba 2 Cu 3 O 7-δ was formed on the YSZ tape by RF magnetron sputtering. In addition, two types having a film thickness of 0.5 μm and 1 μm were prepared. The film forming conditions are as follows.
ターゲット径:100mm 基板温度:550℃ ガス圧:5×10-2Torr 酸素分圧（O2/（O2＋Ar））:50％ RFパワー:100ワット ターゲット−基板間距離:60mm スパッタリング後のものを酸素雰囲気中で900℃１時
間熱処理した後、直流４端子法により、膜厚0.5μｍの
ものについてはTcを測定し、膜厚１μｍのものについて
はJcを測定した。Target diameter: 100mm Substrate temperature: 550 ° C Gas pressure: 5 × 10 -2 Torr Oxygen partial pressure (O 2 / (O 2 + Ar)): 50% RF power: 100 watt Target-substrate distance: 60 mm After sputtering Was heat-treated at 900 ° C. for one hour in an oxygen atmosphere, and then Tc was measured for a film having a thickness of 0.5 μm and Jc was measured for a film having a thickness of 1 μm by a DC four-terminal method.
第１図は、膜厚0.5μｍのものについてのTcを示して
いる。第１図に示されるように、平均表面粗さ（Ra）が
40Å、100Åおよび400Åのものは、それぞれTcが82K、8
1Kおよび80Kであったが、平均表面粗さ（Ra）が1000Å
および10000Åのものは、いずれもTcが45Kと低い値であ
った。FIG. 1 shows Tc for a film having a thickness of 0.5 μm. As shown in FIG. 1, the average surface roughness (Ra) is
40Å, 100Å and 400Å have Tc of 82K and 8 respectively
1K and 80K, but average surface roughness (Ra) is 1000）
And those of 10000Å had a low Tc of 45K.
膜厚１μｍのものについて77.3KでJcを測定したとこ
ろ、表面粗さが40Å、100Åおよび400Åに対し、それぞ
れ１×104、９×103、および５×103A/cm2という値が得
られた。When Jc was measured at 77.3 K for a film having a film thickness of 1 μm, values of 1 × 10 4 , 9 × 10 3 , and 5 × 10 3 A / cm 2 were obtained for surface roughnesses of 40 °, 100 °, and 400 °, respectively. Obtained.
以上のことから明らかなように、表面粗さが400Å
（＝0.04μｍ）以下のものは優れたTcおよびJcを示す。As is clear from the above, the surface roughness is 400 mm.
(= 0.04 μm) or less show excellent Tc and Jc.
［発明の効果］ 以上説明したように、この発明では、平均表面粗さが
0.05μｍ以下の可撓性を有する基材上に、酸化物超電導
層を形成しているので、超電導層の膜厚を平均化し、ま
た膜面を平滑化するとともに配向性を向上させることに
よって、優れた超電導特性が得られる。[Effect of the Invention] As described above, in the present invention, the average surface roughness is
Since the oxide superconducting layer is formed on a substrate having a flexibility of 0.05 μm or less, by averaging the thickness of the superconducting layer, and by smoothing the film surface and improving the orientation, Excellent superconducting properties can be obtained.
【図面の簡単な説明】 第１図は、種々の平均表面粗さの基材の上に形成された
超電導層の臨界温度および臨界電流密度を示す図であ
る。第２図は、平均表面粗さの大きい基材上に超電導層
を形成したときの膜厚状態を示す模式図である。第３図
は、平均表面粗さの小さい基材上に超電導層を形成した
ときの膜厚状態を示す模式図である。第４図は、平均表
面粗さの大きい基材上に超電導層を形成したときの膜面
の平滑状態を示す模式図である。第５図は、平均表面粗
さの小さい基材上に超電導層を形成したときの膜面の平
滑状態を示す模式図である。第６図は、平均表面粗さの
大きい基材上に超電導層を形成したときの配向性を示す
模式図である。第７図は、平均表面粗さの小さい基材上
に超電導層を形成したときの配向性を示す模式図であ
る。 図において、１は超電導層、２は平均表面粗さの小さい
基材、３は平均表面粗さの大きい基材を示す。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing a critical temperature and a critical current density of a superconducting layer formed on a substrate having various average surface roughnesses. FIG. 2 is a schematic diagram showing a film thickness state when a superconducting layer is formed on a substrate having a large average surface roughness. FIG. 3 is a schematic diagram showing a film thickness state when a superconducting layer is formed on a substrate having a small average surface roughness. FIG. 4 is a schematic diagram showing a smooth state of a film surface when a superconducting layer is formed on a substrate having a large average surface roughness. FIG. 5 is a schematic diagram showing a smooth state of a film surface when a superconducting layer is formed on a substrate having a small average surface roughness. FIG. 6 is a schematic diagram showing the orientation when a superconducting layer is formed on a substrate having a large average surface roughness. FIG. 7 is a schematic diagram showing the orientation when a superconducting layer is formed on a substrate having a small average surface roughness. In the figure, 1 indicates a superconducting layer, 2 indicates a substrate having a small average surface roughness, and 3 indicates a substrate having a large average surface roughness.
Claims (2)
ルコニアからなり、かつ可撓性を有する基材と、 平均表面粗さが0.05μｍ以下である前記基材の表面上に
形成されている酸化物超電導層とを備えることを特徴と
する、超電導線。1. A substrate made of a metal, a Ni-based alloy or yttria-stabilized zirconia and having flexibility, and an oxidation layer formed on the surface of the substrate having an average surface roughness of 0.05 μm or less. A superconducting wire, comprising: a superconducting layer.
有する金属または合金からなることを特徴とする、請求
項１に記載の酸化物超電導線。2. The oxide superconducting wire according to claim 1, wherein said substrate is made of a metal or an alloy having a ceramic coating layer.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1026095A JP2803123B2 (en) | 1989-02-04 | 1989-02-04 | Superconducting wire |
| CA002008310A CA2008310C (en) | 1989-02-04 | 1990-02-02 | Superconducting wire |
| EP92113673A EP0528332B1 (en) | 1989-02-04 | 1990-02-05 | Superconducting wire |
| US07/475,048 US5143898A (en) | 1989-02-04 | 1990-02-05 | Superconducting wire |
| EP90102224A EP0385132A1 (en) | 1989-02-04 | 1990-02-05 | Superconducting wire |
| DE69019376T DE69019376T2 (en) | 1989-02-04 | 1990-02-05 | Superconducting wire. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1026095A JP2803123B2 (en) | 1989-02-04 | 1989-02-04 | Superconducting wire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02207415A JPH02207415A (en) | 1990-08-17 |
| JP2803123B2 true JP2803123B2 (en) | 1998-09-24 |
Family
ID=12184039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1026095A Expired - Lifetime JP2803123B2 (en) | 1989-02-04 | 1989-02-04 | Superconducting wire |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2803123B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2813257B2 (en) * | 1991-09-04 | 1998-10-22 | 株式会社東芝 | Superconducting member manufacturing method |
| JP2005056754A (en) * | 2003-08-06 | 2005-03-03 | Sumitomo Electric Ind Ltd | Superconductive wire and its manufacturing method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6430117A (en) * | 1987-07-24 | 1989-02-01 | Furukawa Electric Co Ltd | Formation of ceramic superconductor membrane |
| JPH0752761B2 (en) * | 1988-05-30 | 1995-06-05 | 新技術開発事業団 | Integrated circuit package |
| JPH035397A (en) * | 1989-05-31 | 1991-01-11 | Toshiba Corp | Vapor growth method for thin oxide crystal film |
-
1989
- 1989-02-04 JP JP1026095A patent/JP2803123B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02207415A (en) | 1990-08-17 |
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