JP2792342B2 - Exposure method for thick film wiring pattern - Google Patents
Exposure method for thick film wiring patternInfo
- Publication number
- JP2792342B2 JP2792342B2 JP15841392A JP15841392A JP2792342B2 JP 2792342 B2 JP2792342 B2 JP 2792342B2 JP 15841392 A JP15841392 A JP 15841392A JP 15841392 A JP15841392 A JP 15841392A JP 2792342 B2 JP2792342 B2 JP 2792342B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring pattern
- light
- photomask
- thick film
- photosensitive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は厚膜配線パターンの露光
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for exposing a thick wiring pattern.
【０００２】[0002]
【従来の技術】従来、この種の厚膜配線パターンの露光
法は、露光機の光源と投影レンズの間に、品種・形成層
毎に所定の配線パターンが描画されたフォトマスクを、
所望する品種・形成層に応じて１枚１枚フォトマスクキ
ャリアに交換・装備し、光源から発せられたｇ線（４３
６ｎｍ）やｈ線（４０５ｎｍ）といった波長の光をフォ
トマスクを介することにより、フォトマスク上に描画さ
れた配線パターンを透過／遮断の２値情報に変換し、そ
の２値化された配線パターン情報を投影レンズにより所
定の投影倍率で基板上に塗布された感光性材料に所定時
間投影し、ＸＹステージをステップ移動させて基板全体
を露光していた。ここで、基板上に塗布された感光性材
料は、集積回路や多層線基盤の製造で広く用いられてく
る感光性ポリイミドや感光性レジスタなどの、ｇ線やｈ
線に効率よく感光するネガ型あるいはポジ型の感光性の
材料である。2. Description of the Related Art Conventionally, this type of thick-film wiring pattern exposure method uses a photomask in which a predetermined wiring pattern is drawn for each type and formation layer between a light source and a projection lens of an exposure machine.
Replacement / equipment with photomask carriers one by one according to the desired type and formation layer, and g-rays (43
6 nm) or h-line (405 nm) through a photomask to convert the wiring pattern drawn on the photomask into binary information of transmission / blocking, and the binarized wiring pattern information Was projected by a projection lens at a predetermined projection magnification onto a photosensitive material applied onto the substrate for a predetermined time, and the XY stage was moved stepwise to expose the entire substrate. Here, the photosensitive material applied on the substrate is a g-line or h-line, such as a photosensitive polyimide or a photosensitive register, which is widely used in the manufacture of an integrated circuit or a multi-layer substrate.
It is a negative or positive photosensitive material that is efficiently exposed to lines.
【０００３】[0003]
【発明が解決しようとする課題】上述した従来の厚膜配
線パターンの露光法は、一般的に感光性材料の厚さが２
０μｍ以上で、パターン幅が厚さと同じかそれ以上の場
合、図４（ａ）〜（ｄ）に示すような欠点がある。即
ち、通常の露光時間では図４（ａ）のように厚膜の途中
までしか硬化させえない。図で１０はフォトマスク、１
１はフォトマスクの光遮断部分、６は厚膜の硬化部分、
７は未硬化部分である。この図４（ａ）を現像すると図
４（ｂ）のように除去部分の断面形状は逆テーパ形状と
なる。そこで、露光時間を長くすると、図４（ｃ）のよ
うに光の乱反射により、未硬化部分７の下部までも硬化
してしまい図４（ｄ）のように現像しても下部を除去で
きなくなる。In the above-described conventional exposure method for a thick film wiring pattern, the photosensitive material generally has a thickness of 2 mm.
When the pattern width is equal to or larger than 0 μm and the pattern width is equal to or larger than the thickness, there is a defect as shown in FIGS. That is, in the normal exposure time, the film can be cured only halfway through the thick film as shown in FIG. In the figure, 10 is a photomask, 1
1 is a light shielding portion of a photomask, 6 is a hardened portion of a thick film,
7 is an uncured portion. When FIG. 4A is developed, as shown in FIG. 4B, the cross-sectional shape of the removed portion becomes an inverted tapered shape. Therefore, if the exposure time is lengthened, the lower part of the uncured part 7 is also hardened by irregular reflection of light as shown in FIG. 4C, and the lower part cannot be removed even by developing as shown in FIG. 4D. .
【０００４】このため、一般的には感光性材料の厚膜を
薄くコートし、露光・現像を複数回に分け行っており、
製造時間の短縮や製造コストを下げることが難しいとい
う問題があった。[0004] Therefore, generally, a thick film of a photosensitive material is thinly coated, and exposure and development are divided into a plurality of times.
There is a problem that it is difficult to reduce the manufacturing time and the manufacturing cost.
【０００５】[0005]
【課題を解決するための手段】第１の発明の厚膜配線パ
ターンの露光法は、感光性材料にフォトマスクを介して
光を照射し、配線パターンやコンタクトホールを形成す
る厚膜配線パターンの露光法において、光を遮断する部
分中に設けた光を透過する部分の配線パターンの境界近
傍で光の透過量をその配線パターン内部に向かって漸増
させるように投射型液晶ディスプレイの透過率を電圧制
御装置により制御し、前記電圧制御装置を有した投射型
液晶ディスプレイをフォトマスクとし、前記フォトマス
クを介してポジ型感光性材料に光を照射する。According to a first aspect of the present invention, there is provided a method of exposing a thick film wiring pattern for irradiating a photosensitive material with light through a photomask to form a wiring pattern and a contact hole. In the exposure method, the transmittance of the projection-type liquid crystal display is set so as to gradually increase the light transmission amount toward the inside of the wiring pattern near the boundary of the wiring pattern in the light transmitting portion provided in the light blocking portion. The projection type liquid crystal display having the voltage control device is used as a photomask under the control of a control device, and light is applied to the positive photosensitive material via the photomask.
【０００６】第２の発明の厚膜配線パターンの露光方法
は、光を遮断する部分中に設けた光を透過する部分の配
線パターンの境界近傍で光の透過量をその配線パターン
内部に向かって漸増させるようにフィルムを複数枚重ね
合わせ、前記重ね合わせたフィルムをガラス基板上に貼
付しフォトマスクとし、前記フォトマスクを介してポジ
型感光性材料に光を照射する。According to a second aspect of the present invention, there is provided a method of exposing a thick film wiring pattern, wherein the light transmitting amount is increased toward the inside of the wiring pattern in the vicinity of the boundary of the wiring pattern in the light transmitting portion provided in the light blocking portion. A plurality of films are superposed so as to be gradually increased, and the superimposed films are pasted on a glass substrate to form a photomask, and the positive photosensitive material is irradiated with light through the photomask.
【０００７】[0007]
【実施例】次に、本発明について図面を参照して説明す
る。Next, the present invention will be described with reference to the drawings.
【０００８】図１（ａ）〜（ｃ）は本発明の第１の実施
例を示す模式図である。図１（ａ）は、投射型液晶ディ
スプレイ１と電圧制御装置２との関係を示し、図１
（ｂ）は、投射型液晶ディスプレイ１の各液晶セル３の
透過率分布を示し、図１（ｃ）は、図１（ｂ）の分布を
持った投射型液晶ディスプレイ１の各液晶セル３の透過
状態を模式的に示したものである。FIGS. 1A to 1C are schematic diagrams showing a first embodiment of the present invention. FIG. 1A shows a relationship between the projection type liquid crystal display 1 and the voltage control device 2, and FIG.
1B shows a transmittance distribution of each liquid crystal cell 3 of the projection type liquid crystal display 1, and FIG. 1C shows a transmittance distribution of each liquid crystal cell 3 of the projection type liquid crystal display 1 having the distribution of FIG. Fig. 3 schematically shows a transmission state.
【０００９】光の透過率が０パーセントの部分内に透過
率が１００パーセントの配線パターンが設けられ、配線
パターンの境界近傍で透過率が配線パターンの周辺から
内部に向けて漸増するように、電圧制御装置２の各液晶
セル３に印加する電圧を変化させ液晶の配向４を変化さ
せる。このように制御された投射型液晶ディスプレイ１
を用いて、ポジ型感光性材料５を露光すると図２（ａ）
のように光が当たらない部分が硬化部分６となり、当た
っている部分は未硬化部分７となる。これをウエットエ
ッチングなどの方法により除去すると図２（ｂ）のよう
な断面形状が正テーパ形状に近い配線パターンが形成さ
れる。A wiring pattern having a transmittance of 100% is provided in a portion where the transmittance of light is 0%, and a voltage is set so that the transmittance gradually increases from the periphery of the wiring pattern toward the inside near the boundary of the wiring pattern. The voltage applied to each liquid crystal cell 3 of the control device 2 is changed to change the orientation 4 of the liquid crystal. Projection type liquid crystal display 1 controlled in this way
When the positive photosensitive material 5 is exposed by using FIG.
A portion which is not irradiated with light becomes a cured portion 6 and a portion which is irradiated becomes an uncured portion 7. When this is removed by a method such as wet etching, a wiring pattern having a cross-sectional shape close to a positive taper shape as shown in FIG. 2B is formed.
【００１０】ここで使われる光は、感光性材料を効率よ
く硬化させるものでなくてはならず、また、投射型液晶
ディスプレイ１においてもこの光を透過／遮断可能でな
ければならない。さらに、この投射型液晶ディスプレイ
１には、高表示容量、高解像度が要求される。光の波長
の例としては、ｇ線（４３６ｎｍ）、ｈ線（４０５ｎ
ｍ）などがあり、この波長に効率よく感光するポジ型感
光性レジストやポジ型感光性ポリイミドなどがある。ま
た、この光を選択的に透過／遮断する投射型液晶ディス
プレイ１は、液晶の分子構造の制御、液晶分子の配向制
御、配向剤材料の種々検討を行なうことに実現する。The light used here must cure the photosensitive material efficiently, and the projection type liquid crystal display 1 must be able to transmit and block this light. Further, the projection type liquid crystal display 1 is required to have a high display capacity and a high resolution. Examples of the wavelength of light include g-line (436 nm) and h-line (405n).
m) and the like, and a positive-type photosensitive resist and a positive-type photosensitive polyimide, which are sensitive to this wavelength efficiently. Further, the projection type liquid crystal display 1 that selectively transmits / blocks this light is realized by controlling the molecular structure of liquid crystal, controlling the alignment of liquid crystal molecules, and conducting various studies on alignment material.
【００１１】図３は本発明の第２の実施例を示す断面図
であり、図１（ｂ）の分布を持った複数枚のフィルム８
により構成されたフォトマスクを示す。ここで用いられ
ているフィルム８は、１枚では光を完全に遮断できず、
光の遮断には複数枚を必要とするものである。光の透過
率が０パーセントの部分内に透過率１００パーセントの
配線パターンが設けられ、配線パターンの境界近傍で透
過率が配線パターンの周辺から内部に向けて漸増するよ
うに、複数枚のフィルム８の光の透過面積をそれぞれ変
えて穴開けし、階段上に重ね合わせる。そして、重ね合
わせたフィルム８をガラス基板９上に貼付し、これをフ
ォトマスクとしてポジ型感光性材料を露光する。FIG. 3 is a sectional view showing a second embodiment of the present invention, in which a plurality of films 8 having the distribution shown in FIG.
2 shows a photomask composed of: The film 8 used here cannot completely block light with one sheet,
In order to block light, a plurality of sheets are required. A wiring pattern having a transmittance of 100% is provided in a portion where the light transmittance is 0%, and a plurality of films 8 are provided so that the transmittance gradually increases from the periphery of the wiring pattern toward the inside near the boundary of the wiring pattern. Holes are formed by changing the light transmission area of each, and are superimposed on the stairs. Then, the laminated film 8 is stuck on a glass substrate 9, and the positive type photosensitive material is exposed using this as a photomask.
【００１２】この結果図２（ａ）のように光が当たらな
い部分が硬化部分６となり、当たっている部分は未硬化
部分７となる。これをウエットエッチングなどの方法に
より除去すると図２（ｂ）のような断面形状が正テーパ
形状に近い配線パターンが形成される。As a result, as shown in FIG. 2 (a), a portion which is not irradiated with light becomes a cured portion 6, and a portion which is irradiated becomes an uncured portion 7. When this is removed by a method such as wet etching, a wiring pattern having a cross-sectional shape close to a positive taper shape as shown in FIG. 2B is formed.
【００１３】[0013]
【発明の効果】以上説明したように本発明は、フォトマ
スクに透過率分布を持たせたことにより、ポジ型感光性
材料の厚さが２０μｍ以上で、配線パターン幅が厚さと
同じかそれ以上の場合でも、複数回に分けて露光現象を
行わなくても、ポジ型感光性材料の除去部分の断面形状
を逆テーパ形状から正テーパ形状への改善できる効果が
ある。As described above, the present invention provides a photomask having a transmittance distribution so that the thickness of the positive photosensitive material is 20 μm or more and the width of the wiring pattern is equal to or greater than the thickness. Even in the case of the above, there is an effect that the sectional shape of the removed portion of the positive photosensitive material can be improved from the reverse tapered shape to the positive tapered shape without performing the exposure phenomenon in a plurality of times.
【図１】（ａ）〜（ｃ）は本発明の第１の実施例を示す
模式図である。FIGS. 1A to 1C are schematic diagrams showing a first embodiment of the present invention.
【図２】（ａ），（ｂ）はそれぞれポジ型感光性材料５
を露光した時の縦断面図および現像した後の縦断面図で
ある。FIGS. 2A and 2B are each a positive photosensitive material 5;
FIG. 3 is a vertical cross-sectional view when the image is exposed and a vertical cross-sectional view after development.
【図３】本発明の第２の実施例を示す断面図である。FIG. 3 is a sectional view showing a second embodiment of the present invention.
【図４】（ａ）〜（ｄ）は従来の一例を示す断面図であ
る。FIGS. 4A to 4D are cross-sectional views showing an example of the related art.
１ 投射型液晶ディスプレイ ２ 電圧制御装置 ３ 液晶セル ４ 液晶の配向 ５ ポジ型感光性材料 ６ 硬化部分 ７ 未硬化部分 ８ フィルム ９ ガラス基板 １０ 光遮断部分 １１ フォトマスク DESCRIPTION OF SYMBOLS 1 Projection liquid crystal display 2 Voltage controller 3 Liquid crystal cell 4 Liquid crystal orientation 5 Positive photosensitive material 6 Cured part 7 Uncured part 8 Film 9 Glass substrate 10 Light blocking part 11 Photomask
Claims (2)
照射し、配線パターンやコンタクトホールを形成する厚
膜配線パターンの露光法において、光を遮断する部分中
に設けた光を透過する部分の配線パターンの境界近傍で
光の透過量をその配線パターン内部に向かって漸増させ
るように投射型液晶ディスプレイの透過率を電圧制御装
置により制御し、前記電圧制御装置を有した投射型液晶
ディスプレイをフォトマスクとし、前記フォトマスクを
介してポジ型感光性材料に光を照射することを特徴とす
る厚膜パターンの露光法。In a method of exposing a photosensitive material to light through a photomask through a photomask to expose a thick film wiring pattern for forming a wiring pattern or a contact hole, a light transmitting portion provided in a light blocking portion is provided. The transmittance of the projection type liquid crystal display is controlled by a voltage control device so as to gradually increase the amount of light transmission in the vicinity of the boundary of the wiring pattern toward the inside of the wiring pattern, and a projection type liquid crystal display having the voltage control device is provided. A method of exposing a thick film pattern, comprising irradiating a positive photosensitive material with light through the photomask as a photomask.
る部分の配線パターンの境界近傍で光の透過量をその配
線パターン内部に向かって漸増させるようにフィルムを
複数枚重ね合わせ、前記重ね合わせたフィルムをガラス
基板上に貼付しフォトマスクとし、前記フォトマスクを
介してポジ型感光性材料に光を照射することを特徴とす
る厚膜パターンの露光法。2. A plurality of films are stacked so as to gradually increase the amount of transmitted light near the boundary of the wiring pattern in the light transmitting portion provided in the light blocking portion and toward the inside of the wiring pattern. A method for exposing a thick film pattern, comprising: applying a superposed film on a glass substrate to form a photomask, and irradiating the positive photosensitive material with light through the photomask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15841392A JP2792342B2 (en) | 1992-06-18 | 1992-06-18 | Exposure method for thick film wiring pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15841392A JP2792342B2 (en) | 1992-06-18 | 1992-06-18 | Exposure method for thick film wiring pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH063827A JPH063827A (en) | 1994-01-14 |
| JP2792342B2 true JP2792342B2 (en) | 1998-09-03 |
Family
ID=15671220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15841392A Expired - Lifetime JP2792342B2 (en) | 1992-06-18 | 1992-06-18 | Exposure method for thick film wiring pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2792342B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19929199A1 (en) * | 1999-06-25 | 2001-01-18 | Hap Handhabungs Automatisierun | Method and device for producing a three-dimensional object |
| JP2006011371A (en) * | 2004-05-26 | 2006-01-12 | Fuji Photo Film Co Ltd | Pattern forming method |
| CN105404093A (en) * | 2016-01-06 | 2016-03-16 | 京东方科技集团股份有限公司 | Mask plate, display substrate and preparation method thereof, display panel and display device |
-
1992
- 1992-06-18 JP JP15841392A patent/JP2792342B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH063827A (en) | 1994-01-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19980519 |