JP2759301B2 - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JP2759301B2 JP2759301B2 JP2232161A JP23216190A JP2759301B2 JP 2759301 B2 JP2759301 B2 JP 2759301B2 JP 2232161 A JP2232161 A JP 2232161A JP 23216190 A JP23216190 A JP 23216190A JP 2759301 B2 JP2759301 B2 JP 2759301B2
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- Japan
- Prior art keywords
- electrode layer
- layer
- transparent electrode
- back electrode
- photovoltaic device
- Prior art date
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、いわゆるスルーホールコンタクト構造を有
する光起電力装置に関する。Description: TECHNICAL FIELD The present invention relates to a photovoltaic device having a so-called through-hole contact structure.
従来、太陽電池等の光起電力装置は、ガラス等の透光
性絶縁基板上に酸化スズ〔SnO2〕やITO等からなる透明
電極層，半導体接合形成層及びアルミニウム〔Al〕や銀
〔Ag〕等からなる裏面電極層を順次積層形成して構成さ
れ、透明電極層及び裏面電極層から集電，即ち外部に起
電力を取り出すようになっている。Conventionally, a photovoltaic device such as a solar cell has a transparent electrode layer made of tin oxide [SnO 2 ] or ITO, a semiconductor junction forming layer, and aluminum [Al] or silver [Ag] on a translucent insulating substrate such as glass. And the like, so that current is collected from the transparent electrode layer and the back electrode layer, that is, an electromotive force is extracted to the outside.
ところが、透明電極層は比較的高抵抗（約10Ω／□）
であることから電力損失が大きく、集電効率の低下を招
くため、光電変換効率の向上を図る上で大きな問題とな
っている。However, the transparent electrode layer has relatively high resistance (about 10Ω / □)
Therefore, the power loss is large and the power collection efficiency is reduced, which is a major problem in improving the photoelectric conversion efficiency.
この問題を解決するために、従来では、例えば特開昭
61−20371号公報（H01L 31/04）に見られるようないわ
ゆるスルーホールコンタクト構造の光起電力装置が考え
られており、更にこれを集積型に拡張したものも提案さ
れている。To solve this problem, conventionally, for example,
A photovoltaic device having a so-called through-hole contact structure as disclosed in Japanese Patent Application Laid-Open No. 61-20371 (H01L 31/04) has been proposed, and a further extension of the photovoltaic device to an integrated type has been proposed.
第２図は、この種スルーホールコンタクト構造の集積
型光起電力装置を示したものであり、同図において、
（１）はガラス等の透光性絶縁基板、（２）は基板
（１）上に形成され所定パターンにパターニングされた
SnO2,ITO等からなる透明電極層、（３）は透明電極層
（２）上及び露出した基板（１）上に形成された少なく
とも１つのpn接合或いはpin接合を有するアモルファス
シリコン等からなる半導体接合形成層、（４）は第１裏
面電極層であり、Al又はAg等からなり、接合形成層
（３）上に形成されている。FIG. 2 shows an integrated photovoltaic device having this kind of through-hole contact structure.
(1) is a translucent insulating substrate such as glass, and (2) is formed on the substrate (1) and patterned into a predetermined pattern.
A transparent electrode layer made of SnO 2 , ITO or the like, and (3) a semiconductor made of amorphous silicon having at least one pn junction or a pin junction formed on the transparent electrode layer (2) and the exposed substrate (1). The bonding layer (4) is a first back electrode layer, which is made of Al or Ag, and is formed on the bonding layer (3).
（５）はエッチング或いはレーザビームによるパター
ニング等により形成され，第１裏面電極層（４）及び接
合形成層（３）を貫通し透明電極層（２）に達するスル
ーホール、（６）はエッチング或いはレーザビームによ
るパターニング等により形成され，第１裏面電極層
（４）及び接合形成層（３）を貫通し基板（１）に達す
るセル分離のための分離溝、（７）は絶縁層であり、無
機絶縁材料又は有機絶縁材料からなり、第１裏面電極層
（４）上に積層形成され、同時にスルーホール（５）内
及び分離溝（６）内にそれぞれ形成される。(5) is formed by etching or patterning with a laser beam or the like, and a through hole penetrating through the first back electrode layer (4) and the junction forming layer (3) to reach the transparent electrode layer (2); A separation groove for cell separation, which is formed by patterning with a laser beam, penetrates the first back electrode layer (4) and the junction formation layer (3), and reaches the substrate (1); (7) is an insulating layer; It is made of an inorganic insulating material or an organic insulating material, and is laminated on the first back electrode layer (4) and simultaneously formed in the through hole (5) and the separation groove (6).
こののち、スルーホール（５）内の絶縁層（７）の中
央部がエッチング或いはレーザビームによるパターニン
グにより除去されて集電用溝（５）′が形成され、スル
ーホール（５）内ではスルーホール（５）の周面にのみ
絶縁層（７）が形成されることになる。Thereafter, the central portion of the insulating layer (7) in the through hole (5) is removed by etching or patterning with a laser beam to form a current collecting groove (5) ', and the through hole (5) is formed in the through hole (5). The insulating layer (7) is formed only on the peripheral surface of (5).
また、透明電極層（２）の少なくとも一端の上側の絶
縁層（７）も同時に除去され、隣接セル間の接続のため
の接続溝（８）が形成される。Further, the insulating layer (7) on at least one end of the transparent electrode layer (2) is also removed at the same time, and a connection groove (8) for connection between adjacent cells is formed.
（９）は第２裏面電極層であり、Al,Ag等の蒸着膜又
は導電ペースト等からなり、接続溝（８）内，絶縁層
（７）上及びスルーホール（５）の集電用溝（５）′内
に形成されたのち、所定パターンにパターニングされ
る。Reference numeral (9) denotes a second back electrode layer, which is made of a vapor-deposited film of Al, Ag or the like, or a conductive paste, and is used for collecting current in the connection groove (8), on the insulating layer (7), and in the through hole (5). After being formed in (5) ′, it is patterned into a predetermined pattern.
以上のようにして形成されたスルーホールコンタクト
構造の光起電力装置では、１つのセルについて見た場
合、第１裏面電極層（４）及び第２裏面電極層（９）か
ら集電されることになり、高抵抗な透明電極層（２）に
代えて低抵抗な第２裏面電極層（９）で集電できること
から集電効率を向上でき、しかも、このスルーホールコ
ンタクト構造によって透明電極層（２），半導体接合形
成層（３）及び第１裏面電極層（４）の積層領域つまり
有効面積を増大でき、出力向上が期待できることにな
る。In the photovoltaic device having the through-hole contact structure formed as described above, when one cell is viewed, current is collected from the first back electrode layer (4) and the second back electrode layer (9). The current collecting efficiency can be improved because current can be collected by the low-resistance second back electrode layer (9) instead of the high-resistance transparent electrode layer (2), and the transparent electrode layer ( 2) The stacked region of the semiconductor junction forming layer (3) and the first back electrode layer (4), that is, the effective area can be increased, and an improvement in output can be expected.
しかし、前述した構造の光起電力装置にあっては、発
生した電流がスルーホール（５）内の第２裏面電極層
（９）に到達するまでは高抵抗な透明電極層（２）中を
通るため、電力損失の低減化にはまだ不十分であるとい
った問題がある。However, in the photovoltaic device having the above-described structure, the high-resistance transparent electrode layer (2) passes through the high-resistance transparent electrode layer (2) until the generated current reaches the second back electrode layer (9) in the through hole (5). Therefore, there is a problem that it is still insufficient to reduce power loss.
本発明は、従来の技術の有するこのような問題点に留
意してなされたものであり、その目的とするところは、
透明電極層を極力介さずに集電することが可能なスルー
ホールコンタクト構造の光起電力装置を提供することに
ある。The present invention has been made in consideration of such problems of the prior art, and the purpose thereof is to:
An object of the present invention is to provide a photovoltaic device having a through-hole contact structure capable of collecting current without interposing a transparent electrode layer as much as possible.
前記目的を達成するために、本発明は、透光性絶縁基
板上に透明電極層、半導体接合形成層及び第１裏面電極
層を順次積層形成し、前記第１裏面電極層上に、該第１
裏面電極層及び前記接合形成層と絶縁された状態で前記
第１裏面電極層及び前記接合形成層を貫通する複数個の
スルーホールを介して前記透明電極層に接続される第２
裏面電極層を設け、前記両裏面電極層から集電を行うよ
うにした光起電力装置において、 前記透明電極層上の、前記複数個のスルーホールの相
隣接する前記スルーホール間に、分散して、前記透明電
極層よりも低い抵抗を有する長尺状の金属層を設ける。In order to achieve the above object, the present invention provides a method for forming a transparent electrode layer, a semiconductor junction forming layer, and a first back electrode layer on a light-transmitting insulating substrate in this order, and forming the first back electrode layer on the first back electrode layer. 1
A second electrode connected to the transparent electrode layer through a plurality of through holes penetrating the first rear electrode layer and the junction forming layer while being insulated from the rear electrode layer and the junction forming layer;
In a photovoltaic device provided with a back electrode layer and performing current collection from both the back electrode layers, the photovoltaic device is arranged on the transparent electrode layer, between the through holes adjacent to each other of the plurality of through holes. Thus, a long metal layer having a lower resistance than the transparent electrode layer is provided.
前述した構成によれば、高抵抗な透明電極層上の、複
数個のスルーホールの相隣接するスルーホール間に、分
散して、低抵抗な集電極が設けられるため、第1,第２裏
面電極層から集電する際、発生した電流は、長尺状の各
金属層を通り、高抵抗な透明電極層をほとんど介するこ
とがなく、電力損失を低減することができる。According to the above-described configuration, the low-resistance collector electrodes are dispersed and provided between the adjacent through-holes of the plurality of through-holes on the high-resistance transparent electrode layer. When current is collected from the electrode layer, the generated current passes through the long metal layers and hardly passes through the high-resistance transparent electrode layer, so that power loss can be reduced.
加えて、各金属層を長尺状とし、複数個のスルーホー
ルの相隣接するスルーホール間に、分散して設けたた
め、入射光に対する有効面積はそれほど減少することが
なく、それ以上に電力損失を低減でき、出力特性が向上
する。In addition, since each metal layer has a long shape and is distributed between adjacent through-holes of a plurality of through-holes, the effective area for incident light does not decrease so much, and the power loss further increases. And output characteristics can be improved.
本発明の１実施例につき、集積型光起電力装置の形成
工程を示した第１図を用いて説明する。なお、第１図
（a1）〜（d1）は集積型の１段の一部分を示し、同図
（a2）〜（d2）はそれぞれの断面構成を示している。One embodiment of the present invention will be described with reference to FIG. 1 showing a process of forming an integrated photovoltaic device. FIGS. 1 (a 1 ) to 1 (d 1 ) show a part of an integrated type one-stage, and FIGS. 1 (a 2 ) to 2 (d 2 ) show respective cross-sectional structures.
まず、同図（a1），（a2）に示すように、透光性絶縁
基板（１）上に所定パターンで透明電極層（２）を形成
した後、この透明電極層（２）上に、後に形成される各
スルーホールの中心部にあたる位置に導電膜（10）をパ
ターン形成すると同時に、各スルーホールの近傍，すな
わち複数個のスルーホールの相隣接するスルーホール間
に、分散して、長尺状の各金属層（11）をパターン形成
する。First, as shown in the figures (a 1 ) and (a 2 ), after a transparent electrode layer (2) is formed in a predetermined pattern on a light-transmitting insulating substrate (1), the transparent electrode layer (2) is formed on the transparent electrode layer (2). At the same time, a conductive film (10) is patterned at a position corresponding to the center of each through-hole to be formed later, and dispersed in the vicinity of each through-hole, that is, between adjacent through-holes of a plurality of through-holes. Then, the long metal layers (11) are patterned.
この各導電膜（10）及び各金属層（11）には、金属蒸
着膜又はAg,Ni,Ti,W,Cuの少なくとも１種類を含む金属
を主成分とする金属ペーストを用いて形成され、透明電
極層（２）よりも低抵抗である。Each conductive film (10) and each metal layer (11) are formed using a metal vapor-deposited film or a metal paste containing a metal containing at least one of Ag, Ni, Ti, W, and Cu as a main component, It has lower resistance than the transparent electrode layer (2).
つぎに、同図（b1），（b2）に示すように、半導体接
合形成層（３）及び第１裏面電極層（４）を順次所定パ
ターンに積層形成し、さらに、第１裏面電極層（４）の
上方からレーザビーム（12）を照射し、同図（c2）に示
すように各スルーホール（５）内の第１裏面電極層
（４）及び接合形成層（３）をホール中心部を残して環
状に除去する。Next, FIG. (B 1), as shown in (b 2), the semiconductor junction layer (3) and sequentially laminated in a predetermined pattern the first back electrode layer (4), further, the first back electrode irradiating the layer laser beam (12) from above the (4), drawing the first back electrode layer of each through hole (5) in as shown in (c 2) (4) and the bonding layer (3) The hole is removed in a ring shape leaving the center of the hole.
その後、同図（c1），（c2）に示すように、第１裏面
電極層（４）上に絶縁層（７）及び第２裏面電極層
（９）を順次積層し、さらに、第２裏面電極層（９）の
上方より各スルーホール（５）の中心部にレーザビーム
（13）を照射する。Thereafter, as shown in FIGS. 3 (c 1 ) and (c 2 ), an insulating layer (7) and a second back electrode layer (9) are sequentially laminated on the first back electrode layer (4). 2 A laser beam (13) is applied to the center of each through hole (5) from above the back electrode layer (9).
この結果、同図（d1），（d2）に示すように、レーザ
ビーム（13）により、第２裏面電極層（９）の一部が溶
融してホール中心部の絶縁層（７）を貫通すると共に各
スルーホール（５）内の第１裏面電極層（４）の溶融を
伴なってホール中心部の接合形成層（３）を貫通するレ
ーザ溶着部（14）が形成され、これが各導電膜（10）に
溶着することにより、第２裏面電極層（９）が第１裏面
電極層（４）及び接合形成層（３）と絶縁された状態で
これらを貫通して透明電極層（２）に接続される。As a result, a part of the second back electrode layer (9) is melted by the laser beam (13) and the insulating layer (7) at the center of the hole as shown in FIGS. (D 1 ) and (d 2 ). And a laser welded portion (14) penetrating through the joint forming layer (3) at the center of the hole with the melting of the first back electrode layer (4) in each through hole (5). When the second back electrode layer (9) is insulated from the first back electrode layer (4) and the bonding formation layer (3) by being welded to each conductive film (10), the second back electrode layer (9) penetrates the first back electrode layer (4) and the bonding formation layer (3). Connected to (2).
ここで問題となるのは、各導電膜（10）が半導体接合
形成層（３）を貫通して第１裏面電極層（４）と短絡し
てしまうことであるが、この点については、各導電膜
（10）を各スルーホール（５）より小さくしておけば解
決できる。The problem here is that each conductive film (10) penetrates the semiconductor junction forming layer (3) and short-circuits with the first back electrode layer (4). This can be solved by making the conductive film (10) smaller than each through hole (5).
なお、集積型の隣接するセル間の接続は、前記第２図
で説明した従来方法と同様にして行われる。The connection between adjacent cells of the integrated type is performed in the same manner as in the conventional method described with reference to FIG.
前述のように構成された集積型光起電力装置にあって
は、発生した電流がコンタクトホール部に到達する過程
において高抵抗な透明電極層（２）上の各金属層（11）
を通るため、透明電極層（２）中をほとんど介すること
なく集電できることになり、電力損失を大幅に低減で
き、集電効率を改善できる。In the integrated photovoltaic device configured as described above, each metal layer (11) on the high-resistance transparent electrode layer (2) in the process where the generated current reaches the contact hole portion.
As a result, current can be collected almost without passing through the transparent electrode layer (2), power loss can be greatly reduced, and current collection efficiency can be improved.
すなわち、各金属層（11）が透明電極層（２）よりも
低い抵抗を有する電流経路を形成し、第１、第２裏面電
極層（４），（９）から集電する際、発生した電流は各
金属層（11）を通り、透明電極層（２）中をほとんど介
することがない。That is, each metal layer (11) forms a current path having a lower resistance than the transparent electrode layer (2) and is generated when current is collected from the first and second back electrode layers (4) and (9). The current passes through each metal layer (11) and hardly passes through the transparent electrode layer (2).
そして、第１、第２裏面電極層（４），（９）が集電
（電流収集）の役割を果し、各金属層（11）を通った電
流は両裏面電極層（４），（９）から集電される。The first and second back electrode layers (4) and (9) play a role of current collection (current collection), and the current passing through each metal layer (11) is applied to both back electrode layers (4) and (9). Power is collected from 9).
このとき、第２裏面電極層（９）が電流収集の役割を
果たすため、透明電極層（２）上に各金属層（11）の電
流の集電用の電極を設ける必要がない。At this time, since the second back electrode layer (9) plays a role of collecting current, it is not necessary to provide an electrode for collecting current of each metal layer (11) on the transparent electrode layer (2).
そして、透明電極層（２）上に各金属層（11）を設け
ることで、透明電極層（２）中に流れる電流を少なくで
き、電力損失を低減することができる。By providing each metal layer (11) on the transparent electrode layer (2), the current flowing in the transparent electrode layer (2) can be reduced, and the power loss can be reduced.
加えて、各金属層（11）を長尺状とし、分散して設け
ることから、入射光に対する有効面積をそれほど減少さ
せることがなく、しかも、長尺状の各金属層（11）を、
複数個のスルーホール（５）の相隣接するスルーホール
（５）間に分散して設けたので、各金属層（11）からス
ルーホール（５）までの距離を短くすることができ、発
生した電流の透明電極層（２）中を流れる距離が極めて
短くなり、電力損失を一層効果的に抑えることができ
る。In addition, since each metal layer (11) is elongated and provided in a dispersed manner, the effective area for incident light is not reduced so much, and each elongated metal layer (11) is
Since the plurality of through-holes (5) are dispersedly provided between adjacent through-holes (5), the distance from each metal layer (11) to the through-hole (5) can be shortened. The distance that the current flows through the transparent electrode layer (2) is extremely short, and power loss can be suppressed more effectively.
そのため、電力損失を大幅に低減し、集電効率を著し
く改善することができる。Therefore, power loss can be significantly reduced, and power collection efficiency can be significantly improved.
そして、前記実施例の光起電力装置は、各金属層（1
1）を設けたため、従来公報のスルーホールコンタクト
構造の装置よりも、有効面積では約３％減少したが、そ
れにも拘わらず曲線因子が大きく向上し、出力では約２
〜３％向上した結果が得られた。Then, the photovoltaic device of the above-described embodiment includes the respective metal layers (1
Due to the provision of 1), the effective area is reduced by about 3% as compared with the device having the through-hole contact structure of the conventional publication, but the fill factor is greatly improved despite that, and the output is reduced by about 2%.
~ 3% improved results were obtained.
また、従来の集積型構造のものと比較すると、有効面
積では約２％大きく、出力でも約10％向上するという結
果が得られた。Further, as compared with the conventional integrated type structure, a result was obtained that the effective area was increased by about 2% and the output was improved by about 10%.
本発明は、以上説明したように構成されているため、
つぎに記載する効果を奏する。Since the present invention is configured as described above,
The following effects are obtained.
透明電極層上にこの電極層よりも低い抵抗を有する長
尺状の各金属層を設けたため、発生した電流が、長尺状
の各金属層を通り、高抵抗な透明電極層をほとんど介す
ることがなくなり、電力損失を低減することができる。Since each long metal layer having a lower resistance than this electrode layer is provided on the transparent electrode layer, the generated current passes through each long metal layer and almost passes through the high-resistance transparent electrode layer. And power loss can be reduced.
加えて、各金属層を長尺状としたので。入射光に対す
る有効面積はそれほど減少することがなく、それ以上に
電力損失を低減できるため、出力特性を向上することが
できる。In addition, each metal layer was made long. The effective area for the incident light does not decrease so much, and the power loss can be further reduced, so that the output characteristics can be improved.
しかも、長尺状の各金属層を、透明電極層上の、複数
個のスルーホールの相隣接するスルーホール間に、分散
して設けたため、金属層からスルーホールまでの距離が
短く、発生した電流の透明電極層中を流れる距離が極め
て短くなり、電力損失を一層効果的に抑えることができ
る。In addition, since each long metal layer was dispersedly provided between the adjacent through holes of the plurality of through holes on the transparent electrode layer, the distance from the metal layer to the through hole was short, which occurred. The distance of the current flowing through the transparent electrode layer becomes extremely short, and the power loss can be suppressed more effectively.
また、発生した電流が各金属層を通り、スルーホール
を介して第１、第２裏面電極層で集電されるため、透明
電極層上に各金属層の電流を集電する電極を設ける必要
がなく、この点からも電力損失の低減が図られる。Further, since the generated current passes through each metal layer and is collected at the first and second back electrode layers through the through holes, it is necessary to provide an electrode for collecting the current of each metal layer on the transparent electrode layer. Therefore, power loss can be reduced from this point as well.
そのため、透明電極層を極力介さず、電力損失が極め
て少なく、出力特性が著しく向上した画期的なスルーホ
ールコンタクト構造の光起電力装置を提供することがで
きる。Therefore, it is possible to provide a photovoltaic device having an epoch-making through-hole contact structure in which the transparent electrode layer is minimized, the power loss is extremely small, and the output characteristics are significantly improved.
第１図は本発明による光起電力装置の１実施例を示し、
同図（a1），（b1），（c1），（d1）はそれぞれ異なる
形成工程における平面図、同図（a2），（b2），
（c2），（d2）はそれぞれ同図（a1），（b1），
（c1），（d1）の断面図、第２図は従来例の断面図であ
る。 （１）……透光性絶縁基板、（２）……透明電極層、
（３）……半導体接合形成層、（４）……第１裏面電極
層、（９）……第２裏面電極層、（11）……金属層。FIG. 1 shows an embodiment of a photovoltaic device according to the present invention,
(A 1 ), (b 1 ), (c 1 ), and (d 1 ) are plan views in different forming steps, respectively, and FIGS. (A 2 ), (b 2 ),
(C 2 ) and (d 2 ) are (a 1 ), (b 1 ),
FIG. 2 is a sectional view of (c 1 ) and (d 1 ), and FIG. 2 is a sectional view of a conventional example. (1) translucent insulating substrate, (2) transparent electrode layer,
(3) ... semiconductor junction forming layer, (4) ... first back electrode layer, (9) ... second back electrode layer, (11) ... metal layer.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平２−183572（ＪＰ，Ａ) 特開 平１−140676（ＪＰ，Ａ) 特開 昭63−119586（ＪＰ，Ａ) 実開 昭62−170651（ＪＰ，Ｕ) ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-2-183572 (JP, A) JP-A-1-140676 (JP, A) JP-A-63-119586 (JP, A) 170651 (JP, U)
Claims (1)
合形成層及び第１裏面電極層を順次積層形成し、前記第
１裏面電極層上に、該第１裏面電極層及び前記接合形成
層と絶縁された状態で前記第１裏面電極層及び前記接合
形成層を貫通する複数個のスルーホールを介して前記透
明電極層に接続される第２裏面電極層を設け、前記両裏
面電極層から集電を行うようにした光起電力装置におい
て、 前記透明電極層上の、前記複数個のスルーホールの相隣
接する前記スルーホール間に、分散して、前記透明電極
層よりも低い抵抗を有する長尺状の金属層を設けたこと
を特徴とする光起電力装置。1. A transparent electrode layer, a semiconductor junction forming layer, and a first back electrode layer are sequentially formed on a transparent insulating substrate, and the first back electrode layer and the junction are formed on the first back electrode layer. A second back electrode layer connected to the transparent electrode layer through a plurality of through holes penetrating the first back electrode layer and the bonding formation layer while being insulated from the formation layer; In a photovoltaic device configured to collect current from a layer, a resistance lower than that of the transparent electrode layer is dispersed between the through holes adjacent to each other of the plurality of through holes on the transparent electrode layer. A photovoltaic device provided with a long metal layer having the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2232161A JP2759301B2 (en) | 1990-08-31 | 1990-08-31 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2232161A JP2759301B2 (en) | 1990-08-31 | 1990-08-31 | Photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04112581A JPH04112581A (en) | 1992-04-14 |
| JP2759301B2 true JP2759301B2 (en) | 1998-05-28 |
Family
ID=16934954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2232161A Expired - Fee Related JP2759301B2 (en) | 1990-08-31 | 1990-08-31 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2759301B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013058540A1 (en) * | 2011-10-18 | 2013-04-25 | Lg Innotek Co., Ltd. | Solar cell apparatus and method of fabricating the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62170651U (en) * | 1986-04-18 | 1987-10-29 | ||
| JPS63119586A (en) * | 1986-11-07 | 1988-05-24 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
| JP2657085B2 (en) * | 1989-01-10 | 1997-09-24 | 三洋電機株式会社 | Photovoltaic device |
-
1990
- 1990-08-31 JP JP2232161A patent/JP2759301B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013058540A1 (en) * | 2011-10-18 | 2013-04-25 | Lg Innotek Co., Ltd. | Solar cell apparatus and method of fabricating the same |
| US9553213B2 (en) | 2011-10-18 | 2017-01-24 | Lg Innotek Co., Ltd. | Solar cell apparatus and method of fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04112581A (en) | 1992-04-14 |
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