JP2754420B2 - Wafer holding device - Google Patents
Wafer holding deviceInfo
- Publication number
- JP2754420B2 JP2754420B2 JP16355690A JP16355690A JP2754420B2 JP 2754420 B2 JP2754420 B2 JP 2754420B2 JP 16355690 A JP16355690 A JP 16355690A JP 16355690 A JP16355690 A JP 16355690A JP 2754420 B2 JP2754420 B2 JP 2754420B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- holding device
- charged particle
- particle beam
- wafer holding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は真空中でウェーハを高精度に保持する装置に
関するものである。Description: TECHNICAL FIELD The present invention relates to an apparatus for holding a wafer with high precision in a vacuum.
従来この種の装置では、ウェーハにおける電子線、イ
オンビーム線等の荷電粒子線の入射面（ウェーハ表面）
とは反対側（ウェーハ裏面側）に静電吸着装置があり、
ウェーハ裏面を吸着した後、ウェーハ表面を基準面に当
接していた。Conventionally, in this type of apparatus, the incident surface (wafer surface) of a charged particle beam such as an electron beam and an ion beam on a wafer.
There is an electrostatic attraction device on the opposite side (wafer back side)
After suctioning the back surface of the wafer, the front surface of the wafer was in contact with the reference surface.
上記の如き従来の技術に於いてはウェーハは裏面から
静電吸着による力を受け、表面からはウェーハ位置決め
のための基準面から力を受けるため、表裏両面から力を
受け、ウェーハに歪が残る恐れがあった。In the conventional technology as described above, the wafer receives the force from the back surface by electrostatic attraction, and the front surface receives the force from the reference surface for wafer positioning, so the force is received from both the front and back surfaces, and the wafer remains strained. There was fear.
あるいは、ウェーハ表面を基準面に当接する表面基準
を採用する代わりに、ウェーハの裏面を基準面に当接す
る裏面基準を採用することも考えられるが、裏面基準で
は、荷電粒子線の軸方向の位置を正確に決めることがで
きない。Alternatively, instead of using the front surface reference that abuts the wafer surface on the reference surface, it is conceivable to employ a back surface reference that abuts the back surface of the wafer on the reference surface. Can not be determined exactly.
本発明はこの様な従来の問題点に鑑みてなされたもの
で、ウェーハの表面にしか力が加わらないウェーハ保持
装置を提供することを目的とする。The present invention has been made in view of such conventional problems, and has as its object to provide a wafer holding device that applies a force only to the surface of a wafer.
上記問題点の解決の為に本発明では、荷電粒子線の照
射されるウェーハを保持するウェーハ保持装置におい
て、前記荷電粒子線が入射するウェーハ表面の周縁部に
対する基準面を有すると共に、該基準面上に、薄膜で形
成した絶縁層を含む吸着手段を設けた。In order to solve the above problems, according to the present invention, in a wafer holding device for holding a wafer irradiated with a charged particle beam, the wafer holding device has a reference surface with respect to a peripheral portion of a wafer surface on which the charged particle beam is incident, and the reference surface Above, an adsorption means including an insulating layer formed of a thin film was provided.
荷電粒子線の軸に高精度に直交する面になるよう加工
された基準面上に、薄膜で形成された絶縁層を含む吸着
手段が設けられており、薄膜の厚さのムラは10％以下の
凸凹に容易に抑えられるので少くともこの面に当接した
ウェーハの周縁部の軸方向の位置は正確に決められる。
従ってウェーハ全面はその平面度の範囲内で正しく位置
決めされる。ウェーハが正しく吸着されるか否かは、ウ
ェーハ重量と静電力との大小関係で決められる。前者よ
り後者が十分大きければよい。Suction means including an insulating layer formed of a thin film is provided on a reference surface that is machined to be a surface orthogonal to the axis of the charged particle beam with high precision, and the thickness unevenness of the thin film is 10% or less. Therefore, at least the axial position of the peripheral portion of the wafer in contact with this surface can be accurately determined.
Therefore, the entire surface of the wafer is correctly positioned within the range of the flatness. Whether or not a wafer is correctly suctioned is determined by the magnitude relationship between the wafer weight and the electrostatic force. It is only necessary that the latter is sufficiently larger than the former.
ウェーハ重量を50gr（８″ウェーハ）とすると、静電
力Ｆは50gr重より十分大きければよい。Assuming that the wafer weight is 50 gr (8 ″ wafer), it is sufficient that the electrostatic force F is sufficiently larger than 50 gr weight.
従って 重を満せばよい。Therefore Just fill it.
100gr重/cm2の静電力が得られる場合には、1cm2以上
の面積が取れればウェーハを吸着できる。８インチウェ
ーハの周縁部で幅1mmのリング状領域を考えると、約6cm
2の面積が得られるので、吸着に必要な十分な面積が得
られる。When an electrostatic force of 100 gr weight / cm 2 can be obtained, the wafer can be sucked if an area of 1 cm 2 or more is obtained. Considering a ring-shaped area with a width of 1 mm at the periphery of an 8-inch wafer,
Since an area of 2 is obtained, a sufficient area required for adsorption is obtained.
以下、図面に示した実施例に基づいて本発明を説明す
る。Hereinafter, the present invention will be described based on embodiments shown in the drawings.
第１図は本発明の一実施例の部分拡大断面図（第２図
（ｂ）の一点鎖線Ｂ円の部分）であり、第２図（ａ）、
（ｂ）は上記一実施例の全体を概略的に示した図であ
り、第２図（ａ）は平面図、第２図（ｂ）は第２図
（ａ）のＡ−Ａ′矢視断面図である。FIG. 1 is a partially enlarged cross-sectional view (a portion indicated by a dashed-dotted line B in FIG. 2B) of an embodiment of the present invention.
2B is a view schematically showing the whole of the embodiment, FIG. 2A is a plan view, and FIG. 2B is a view taken along the line AA ′ in FIG. 2A. It is sectional drawing.
基準ブロック１は、中央部に円形の開口1aを形成され
た上板部1bと、上板部1bを支える横断面形状がコ字形
（第２図（ａ）参照）の脚部1cとを有する。脚部1cの開
口部1dはウェーハ10の挿脱孔として機能し、従って、対
向する脚部1cの間隔及び、奥行きは当然ウェーハ10の外
径よりも大きく設計してある。また、上板部1bの開口1a
の径は、ウェーハ10の外径より若干小さく設計してあ
る。The reference block 1 has an upper plate portion 1b having a circular opening 1a formed in the center, and a leg portion 1c supporting the upper plate portion 1b and having a U-shaped cross section (see FIG. 2 (a)). . The opening 1d of the leg 1c functions as an insertion / removal hole for the wafer 10. Therefore, the interval and the depth of the opposing leg 1c are naturally designed to be larger than the outer diameter of the wafer 10. In addition, the opening 1a of the upper plate portion 1b
Is designed to be slightly smaller than the outer diameter of the wafer 10.
そして、上板部1bの下面には、開口1aに隣接して数mm
幅のリング状の基準面２が形成さており、この基準面２
はウェーハ10の表面周辺部に対する取付基準面として機
能する。そのため、この基準面２は、荷電粒子線の軸に
高精度に直交する面として加工されている。Then, on the lower surface of the upper plate portion 1b, a few mm is adjacent to the opening 1a.
A ring-shaped reference surface 2 having a width is formed.
Functions as a reference mounting surface for the peripheral portion of the surface of the wafer 10. Therefore, the reference surface 2 is processed as a surface orthogonal to the axis of the charged particle beam with high accuracy.
基準面２以外の基準ブロック１のほぼ全表面には、帯
電防止のために、チタンの蒸着膜３が形成されている。On almost the entire surface of the reference block 1 other than the reference surface 2, a deposited titanium film 3 is formed to prevent charging.
また、基準面２の表面には、真空蒸着等で電極4a、4b
を形成する金属の薄膜が幅約1mm、厚さ0.2μｍ程度で形
成されている。荷電粒子線の軸に直交する面内で見た
（平面図）第２図（ａ）に表われているように、電極4
a、4bは、周辺を２分割するように形成されている。The electrodes 4a, 4b are formed on the surface of the reference surface 2 by vacuum evaporation or the like.
Is formed with a width of about 1 mm and a thickness of about 0.2 μm. As shown in FIG. 2 (a) (plan view) viewed in a plane perpendicular to the axis of the charged particle beam, the electrode 4
a and 4b are formed so as to divide the periphery into two parts.
そして、これら電極4a、4bにはそれぞれ導線5a、5bが
接続され、導線5a、5bは基準ブロック１の内側面に沿っ
て導かれた後、シール材6a、6b等を介して基準ブロック
１の内部から外部に導出される。The conductors 5a and 5b are connected to the electrodes 4a and 4b, respectively, and the conductors 5a and 5b are guided along the inner side surface of the reference block 1 and then connected to the reference block 1 via sealing materials 6a and 6b. Derived from inside to outside.
このようにして外部に導出された導線5a、5bには、そ
れぞれ＋100V、−100Vが印加される。In this way, +100 V and -100 V are applied to the conductors 5a and 5b led out to the outside, respectively.
また、電極4a、4bの表面及び基準面２の表面には、真
空蒸着によってアルミナ（Al2O3）の絶縁膜７が厚さ３
μｍ程度で形成されている。An insulating film 7 of alumina (Al 2 O 3 ) having a thickness of 3 is formed on the surfaces of the electrodes 4a and 4b and the surface of the reference surface 2 by vacuum evaporation.
It is formed with a thickness of about μm.
ウェーハ搬送用の静電吸着装置９の基台90は、平面形
状がほぼ円形であり、その上面には電極91とアルミナ等
の絶縁膜92とが形成されており、このような静電吸着装
置９は周知の構成のものである。The base 90 of the electrostatic chuck 9 for transferring wafers has a substantially circular planar shape, and has an electrode 91 and an insulating film 92 such as alumina formed on the upper surface thereof. Reference numeral 9 denotes a well-known configuration.
このような構成であるから、静電吸着装置９によっ
て、上板部1bと脚部1cで囲まれた空間内に運ばれた後、
開口1aの中心とほぼ中心を合わせられたウェーハ10は、
静電吸着装置９の上昇によって、基準面２の蒸着膜３に
当接する。静電吸着装置９の上昇用モータの負荷増等に
より上記当接を検出すると、この検出信号によって、電
極4a、4bにそれぞれ＋100V、−100Vが印加され、その
後、静電吸着装置９の電極91への通電が切られ、静電吸
着装置９が下降して停止する。With such a configuration, after being transported by the electrostatic attraction device 9 into the space surrounded by the upper plate portion 1b and the leg portion 1c,
The wafer 10 almost centered with the center of the opening 1a,
When the electrostatic suction device 9 rises, it comes into contact with the deposited film 3 on the reference surface 2. When the contact is detected by increasing the load on the lifting motor of the electrostatic chucking device 9 or the like, +100 V and −100 V are applied to the electrodes 4 a and 4 b by this detection signal. Is turned off, and the electrostatic attraction device 9 descends and stops.
電極4a、4bにはそれぞれ＋100V、−100Vが印加されて
いるから、ウェーハ10は基準ブロック１に静電吸着され
ることになる。Since +100 V and -100 V are applied to the electrodes 4a and 4b, the wafer 10 is electrostatically attracted to the reference block 1.
このとき、電極4a、4b及び絶縁膜７の厚みは3.2μｍ
程度であり、これらの厚みムラは10％以下であるので、
少くともウェーハ10の周縁部は正確に位置決めができ
る。従って、ウェーハ10の全表面は、その平坦度範囲内
に正しく位置決めができる。At this time, the thickness of the electrodes 4a, 4b and the insulating film 7 is 3.2 μm.
And these thickness irregularities are 10% or less,
At least the peripheral portion of the wafer 10 can be accurately positioned. Accordingly, the entire surface of the wafer 10 can be correctly positioned within the flatness range.
そして、矢印Ｃ方向からウェーハ10上に荷電粒子線の
照射が行なわれる。Then, the charged particle beam is irradiated onto the wafer 10 from the direction of arrow C.
以上の実施例によれば、 （１）約50grのウェーハを約500gr重の力で吸着固定
しているので、Siウェーハを上面に吸着固定できる、
（２）構造が簡単で、静電チャック電圧は±100Vで動作
し、ロードアンロード用電源と兼用できる、（３）静電
チャック用の電極と絶縁層の形成は蒸着やスパッタで可
能なので簡単に作れ、信頼性がある、（４）表面基準で
あるので、ウェーハの厚みムラ等があってもウェーハ面
の荷電粒子線の軸方向の変動がない、（５）基準ブロッ
クがSiCの如き高価なセラミックスでなく、アルミナと
いう安価な材料でできるので安価である、という効果が
得られる。According to the above embodiment, (1) Since a wafer of about 50 gr is fixed by suction with a force of about 500 gr, the Si wafer can be fixed by suction on the upper surface.
(2) The structure is simple, the electrostatic chuck voltage operates at ± 100V, and it can also be used as a load / unload power supply. (3) The electrodes and insulating layer for the electrostatic chuck can be formed easily by vapor deposition or sputtering. (4) Since the surface reference is used, there is no fluctuation in the axial direction of the charged particle beam on the wafer surface even if there is unevenness in the thickness of the wafer, etc. (5) The reference block is expensive such as SiC Since it can be made of an inexpensive material such as alumina instead of simple ceramics, the effect of being inexpensive can be obtained.
〔発明の効果〕 以上のように本発明によれば、ウェーハの表面にしか
力が加わらないので、ウェーハに歪が残ることがなく、
正確に位置決めができる。[Effect of the Invention] As described above, according to the present invention, since a force is applied only to the surface of the wafer, no distortion remains on the wafer,
Accurate positioning is possible.
第１図は本発明の一実施例の部分拡大断面図（第２図
（ｂ）の一点鎖線Ｂで囲った円の部分）、第２図
（ａ）、（ｂ）は上記一実施例の全体を概略的に示した
図であり、第２図（ａ）は平面図、第２図（ｂ）は第２
図（ａ）のＡ−Ａ′矢視断面図である。 〔主要部分の符号の説明〕 ２……基準面、4a、4b……電極、 ７……アルミナ膜。FIG. 1 is a partially enlarged cross-sectional view of one embodiment of the present invention (a circle portion surrounded by a dashed line B in FIG. 2B), and FIGS. 2A and 2B are views of the above-mentioned embodiment. FIG. 2 (a) is a plan view, and FIG. 2 (b) is a diagram schematically showing the whole.
FIG. 2 is a sectional view taken along the line AA ′ in FIG. [Description of Signs of Main Parts] 2... Reference plane, 4a, 4b... Electrode, 7... Alumina film.
Claims (1)
るウェーハ保持装置において、 前記荷電粒子線が入射するウェーハ表面の周縁部に対す
る基準面を有すると共に、該基準面上に、薄膜で形成し
た絶縁層を含む吸着手段を備えたことを特徴とするウェ
ーハ保持装置。1. A wafer holding device for holding a wafer irradiated with a charged particle beam, comprising: a reference surface for a peripheral portion of a wafer surface on which the charged particle beam is incident; and a thin film formed on the reference surface. A wafer holding device comprising suction means including an insulating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16355690A JP2754420B2 (en) | 1990-06-21 | 1990-06-21 | Wafer holding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16355690A JP2754420B2 (en) | 1990-06-21 | 1990-06-21 | Wafer holding device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0454880A JPH0454880A (en) | 1992-02-21 |
| JP2754420B2 true JP2754420B2 (en) | 1998-05-20 |
Family
ID=15776146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16355690A Expired - Fee Related JP2754420B2 (en) | 1990-06-21 | 1990-06-21 | Wafer holding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2754420B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06326175A (en) * | 1993-04-22 | 1994-11-25 | Applied Materials Inc | Protective coating for dielectric material of wafer support used in integrated circuit processing equipment and formation method therefor |
-
1990
- 1990-06-21 JP JP16355690A patent/JP2754420B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0454880A (en) | 1992-02-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |