JP2688293B2 - Wafer surface cleaning method - Google Patents
Wafer surface cleaning methodInfo
- Publication number
- JP2688293B2 JP2688293B2 JP5953391A JP5953391A JP2688293B2 JP 2688293 B2 JP2688293 B2 JP 2688293B2 JP 5953391 A JP5953391 A JP 5953391A JP 5953391 A JP5953391 A JP 5953391A JP 2688293 B2 JP2688293 B2 JP 2688293B2
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- JP
- Japan
- Prior art keywords
- cleaning
- hydrochloric acid
- wafer
- pure water
- level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体Ｓｉウェーハの
洗浄方法に係り、特にウェーハの表面清浄度を向上する
ことができる洗浄方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a semiconductor Si wafer, and more particularly to a cleaning method capable of improving the surface cleanliness of a wafer.
【０００２】[0002]
【従来の技術】近年、半導体デバイスの集積度が向上し
パターン寸法が小さくなるに従って、Ｓｉウェーハ基板
の表面清浄度を一層向上させることが必要となってい
る。2. Description of the Related Art In recent years, as the degree of integration of semiconductor devices has improved and the pattern size has decreased, it has become necessary to further improve the surface cleanliness of Si wafer substrates.
【０００３】従来、Ｓｉウェーハ基板の洗浄方法は、ウ
ェーハ表面に付着した汚染物質を、各種薬液が入れられ
た多数の洗浄槽を順次通過させることにより除去する、
いわゆるＲＣＡ洗浄法と呼ばれるウェット洗浄法が一般
的に採られている。Conventionally, in the method of cleaning a Si wafer substrate, contaminants adhering to the wafer surface are removed by sequentially passing through a number of cleaning tanks containing various chemicals.
A wet cleaning method called a so-called RCA cleaning method is generally adopted.
【０００４】前記ウェット洗浄法の最終薬液洗浄工程と
して、シリコンウェーハ表面上の有機物およびパーティ
クル（大部分がシリコンの破砕粒子）の除去を目的とす
る洗浄（ＳＣ−１洗浄）がある。この洗浄は、濃度２８
％のアンモニア水と、濃度３０％の過酸化水素水と、純
水とを次の体積比で混合してなるアンモニア系の薬液を
用いて行うものである。 ＮＨ4ＯＨ：Ｈ2Ｏ2：Ｈ2Ｏ＝１：１：５As the final chemical cleaning step of the wet cleaning method, there is cleaning (SC-1 cleaning) for removing organic substances and particles (mostly crushed particles of silicon) on the surface of a silicon wafer. This wash has a concentration of 28
% Ammonia water, a 30% hydrogen peroxide solution, and pure water are mixed in the following volume ratios to perform an ammonia-based chemical solution. NH 4 OH: H 2 O 2 : H 2 O = 1: 1: 5
【０００５】ところで、前記洗浄においては、アンモニ
ア水および過酸化水素水中にごく微量（数ｐｐｂ）では
あるが、アルミニウムや重金属不純物が含まれており、
この金属不純物が洗浄後にウェーハ表面に不可避的に残
留してしまうという不満があった。By the way, in the above-mentioned cleaning, aluminum and heavy metal impurities are contained in the ammonia water and the hydrogen peroxide water, although the amount thereof is very small (several ppb),
There is a complaint that the metal impurities inevitably remain on the wafer surface after cleaning.
【０００６】これらの不純物はサブミクロンのパターン
寸法を有するＬＳＩにおいては問題となるため、これら
の不純物の除去のために、前記のアンモニア系の薬液に
よる洗浄と、フッ酸による自然酸化膜ごと不純物を除去
する方法と、塩酸と過酸化水素水と純水とを混合してな
る塩酸系の薬液（Ｈ2Ｏ：Ｈ2Ｏ2：ＨＣｌ＝５：１：
１）を用いた洗浄（ＳＣ−２洗浄）が組み合わされて行
われてきた。Since these impurities pose a problem in an LSI having a submicron pattern size, in order to remove these impurities, cleaning with the above-mentioned ammonia-based chemical liquid and impurities along with the natural oxide film by hydrofluoric acid are removed. A method of removing and a hydrochloric acid based chemical solution (H 2 O: H 2 O 2 : HCl = 5: 1:
Washing using 1) (SC-2 washing) has been performed in combination.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら前記の方
法において、フッ酸による自然酸化膜の除去はパーティ
クルを吸着することが知られ、塩酸と過酸化水素水と純
水とを混合してなる塩酸系の薬液（Ｈ2Ｏ：Ｈ2Ｏ2：Ｈ
Ｃｌ＝５：１：１）を用いた洗浄は、金属イオンの除去
に効果があるものの、パーティクル除去効果は無く、通
常はＳＣ−１洗浄の前に行われるという公知の事実があ
った。However, in the above-mentioned method, it is known that the removal of the natural oxide film by hydrofluoric acid adsorbs particles, and a hydrochloric acid-based system obtained by mixing hydrochloric acid, hydrogen peroxide solution and pure water is used. Liquid medicine (H 2 O: H 2 O 2 : H
Although the cleaning with Cl = 5: 1: 1) is effective in removing metal ions, there is no particle removing effect, and there is a known fact that it is usually performed before SC-1 cleaning.
【０００８】[0008]
【課題を解決するための手段】そこで、本発明者等が、
上記課題を解決すべく、鋭意研究を重ねた結果、次のよ
うな知見を見出すに至った。Therefore, the present inventors have
As a result of intensive studies to solve the above problems, the following findings have been found.
【０００９】すなわち、本発明者らは、ＳＣ−１洗浄後
に希薄塩酸洗浄をすることによって、ウェーハ表面の金
属レベルを低減できると共に表面のパーティクルレベル
を悪化させない効果を見いだした。That is, the present inventors have found that the cleaning with dilute hydrochloric acid after the SC-1 cleaning can reduce the metal level on the wafer surface and does not deteriorate the particle level on the surface.
【００１０】さらに、ＳＣ−１洗浄後に行う希薄塩酸洗
浄は、濃度３３〜３８％の塩酸に対して純水を体積比で
１０〜１００００の割合で混合した非常に希薄な塩酸を
用いると有効であることを見いだした。Further, the dilute hydrochloric acid cleaning carried out after the SC-1 cleaning is effective when using a very dilute hydrochloric acid in which pure water is mixed with a hydrochloric acid having a concentration of 33 to 38% at a volume ratio of 10 to 10,000. I found something.
【００１１】本発明者らは、この理由について以下のよ
うに推察している。すなわち、ＳＣ−１洗浄でウェーハ
表面に付着する金属は、洗浄液から入るＡｌが主である
ため希薄溶液でも容易に除去でき、また表面は親水性の
自然酸化膜に覆われているためパーティクルレベルを悪
化させない。The present inventors presume the reason for this as follows. That is, the metal adhering to the wafer surface in SC-1 cleaning can be easily removed even in a dilute solution because Al mainly entering from the cleaning liquid is used, and since the surface is covered with a hydrophilic natural oxide film, the particle level is reduced. Do not make it worse.
【００１２】本発明は上記の知見に基づいてなされたも
のであり、請求項１記載のウェーハの表面洗浄方法で
は、アンモニア水と過酸化水素水と純水とを混合してな
る混合液を用いてウェーハの表面を洗浄後、さらに濃度
３３〜３８％の塩酸に対して純水を体積比で１０〜１０
０００の割合で混合した希薄塩酸でウェーハを洗浄する
ことを特徴とするものである。The present invention has been made on the basis of the above findings. In the method for cleaning the surface of a wafer according to claim 1, a mixed solution obtained by mixing ammonia water, hydrogen peroxide water and pure water is used. After cleaning the surface of the wafer with pure water, pure water is added to the hydrochloric acid having a concentration of 33 to 38% by volume ratio of 10 to 10
The wafer is washed with dilute hydrochloric acid mixed at a ratio of 000.
【００１３】請求項２のウェーハの表面洗浄方法では、
希薄塩酸によりウェーハを洗浄後、この洗浄後の希薄塩
酸を濾過して、希薄塩酸内に含まれる０．２０μｍ以上
の粒子数を１０個以下に抑えた後、この希薄塩酸を循環
させて再びウェーハの洗浄に用いることを特徴とするも
のである。According to the method of cleaning the surface of a wafer of claim 2,
After cleaning the wafer with diluted hydrochloric acid, the diluted hydrochloric acid after the cleaning is filtered to suppress the number of particles of 0.20 μm or more contained in the diluted hydrochloric acid to 10 or less, and then the diluted hydrochloric acid is circulated to re-perform the wafer. It is characterized in that it is used for cleaning.
【００１４】ここで請求項１のウェーハの表面洗浄方法
において、純水と塩酸とを前述のような体積比で混合し
たのは、純水の体積比が前述の範囲より大きいと金属イ
オン除去の効果が小さくなり過ぎ、逆に前述の範囲より
小さいと基板表面のパーティクルレベルが悪化し過ぎる
ためである。In the wafer surface cleaning method according to the first aspect of the present invention, pure water and hydrochloric acid are mixed in a volume ratio as described above because metal ions are removed when the volume ratio of pure water is larger than the above range. This is because the effect becomes too small, and conversely, when it is smaller than the above range, the particle level on the surface of the substrate deteriorates too much.
【００１５】また請求項２のウェーハの表面洗浄方法に
おいて、希薄塩酸内に含まれる０．２０μｍ以上の粒子
数を１０個以下に抑えたのは、０．２０μｍ以上の粒子
（パーティクル）数が１０個を越えると、基板表面にこ
のパーティクルが付着してパーティクルレベルが悪化し
過ぎるためである。希薄塩酸のパーティクルレベルを
０．２０μｍ以上の粒子数１０個以下に抑えるために
は、精密濾過を行うことが望ましい。In the method for cleaning the surface of a wafer according to claim 2, the number of particles of 0.20 μm or more contained in dilute hydrochloric acid is suppressed to 10 or less because the number of particles of 0.20 μm or more is 10. This is because if the number of particles exceeds the number, the particles adhere to the surface of the substrate and the particle level deteriorates too much. In order to suppress the particle level of dilute hydrochloric acid to 10 particles or less of 0.20 μm or more, it is desirable to perform microfiltration.
【００１６】[0016]
【実施例】以下、図面を参照して本発明のウェーハの表
面洗浄方法について詳しく説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The method for cleaning the surface of a wafer according to the present invention will be described in detail below with reference to the drawings.
【００１７】（実施例）図１は本発明のウェーハの表面
洗浄方法の一実施例を示す工程図である。この方法で
は、まず、 濃度２７〜３１％のアンモニア水と、濃
度２９〜３３％の過酸化水素水と、純水とを体積比で
１：１：５の割合で混合した洗浄液を用いて、８０℃の
温度で１０分間Ｓｉウェーハ基板を洗浄する。（ＳＣ−
１洗浄） 次いで、このＳｉウェーハ基板を純水によ
りリンスし、 さらに、濃度３３〜３８％の塩酸に対
して純水を体積比で１０〜１００００の割合で混合した
洗浄液を用いて洗浄する。ここで、前記希薄塩酸は、循
環濾過を施して０.２０μｍ以上の粒子数を１０個に抑
えたパーティクルレベルにしたものを用いた。 次い
で純水で洗浄した後、 乾燥処理を施した。(Embodiment) FIG. 1 is a process chart showing an embodiment of a wafer surface cleaning method of the present invention. In this method, first, using a cleaning liquid in which ammonia water having a concentration of 27 to 31%, hydrogen peroxide water having a concentration of 29 to 33%, and pure water are mixed at a volume ratio of 1: 1: 5, The Si wafer substrate is washed at a temperature of 80 ° C. for 10 minutes. (SC-
1 Cleaning) Next, this Si wafer substrate is rinsed with pure water, and further cleaned using a cleaning liquid in which pure water is mixed with hydrochloric acid having a concentration of 33 to 38% at a volume ratio of 10 to 10,000. Here, the diluted hydrochloric acid used was one that was subjected to circulation filtration to a particle level in which the number of particles of 0.20 μm or more was suppressed to 10. Then, it was washed with pure water and then dried.
【００１８】このウェーハの表面洗浄方法では、ＳＣ−
１洗浄後に前述のような組成の希薄塩酸処理を施してい
るため、ＳＣ−１洗浄後のパーティクルレベルを低下さ
せることなしに表面金属を除去することができる。In this wafer surface cleaning method, SC-
Since the diluted hydrochloric acid treatment having the above-described composition is performed after the first cleaning, the surface metal can be removed without lowering the particle level after the SC-1 cleaning.
【００１９】（実験例１）図２にＳｉウェーハ基板表面
に付着している金属レベルとパーティクルレベル（０.
３０μｍ以上）のＨＣｌ／Ｈ2Ｏ濃度比依存性について
示す。(Experimental Example 1) FIG. 2 shows the metal level and particle level (0.
30 / μm or more) HCl / H 2 O concentration ratio dependence.
【００２０】図中、丸印は本発明の洗浄方法によって洗
浄した後の基板表面に付着している金属レベルであり、
三角印は同基板表面のパーティクルレベルを示したもの
である。また、図中黒丸印は、従来のＳＣ−２洗浄のよ
うに塩酸と純水と過酸化水素水を含んでいる洗浄液を用
いた場合の表面金属レベルを示したものである（比較例
１）。さらに、黒四角印で示されたものは希薄塩酸処理
を行わずにＳＣ−１洗浄のみを施した基板表面の金属レ
ベルを示したものである（比較例２）。In the figure, circles represent the metal level adhering to the substrate surface after cleaning by the cleaning method of the present invention,
Triangle marks indicate the particle level on the surface of the substrate. The black circles in the figure show the surface metal level when a cleaning solution containing hydrochloric acid, pure water and hydrogen peroxide solution was used as in the conventional SC-2 cleaning (Comparative Example 1). . Further, the black squares show the metal level of the substrate surface which was subjected to only SC-1 cleaning without the dilute hydrochloric acid treatment (Comparative Example 2).
【００２１】図２により、本発明で規定した範囲の希薄
塩酸により洗浄を施したウェーハ表面の金属レベルは、
ＳＣ−１洗浄のみを施したウェーハ表面の金属レベル
（比較例２）より低下すること、および本発明の範囲内
では、ＨＣｌ／Ｈ2Ｏ濃度比に依存せず金属レベルがほ
ぼ一定であることが判明した。さらに、従来のＳＣ−２
洗浄のように過酸化水素水を含んでいる洗浄液を用いた
場合よりも、本発明で規定している希薄塩酸洗浄液の方
がウェーハ表面の金属レベルが低いことが判明した。As shown in FIG. 2, the metal level on the surface of the wafer washed with dilute hydrochloric acid in the range specified in the present invention is
Lower than the metal level on the wafer surface subjected to SC-1 cleaning only (Comparative Example 2), and within the scope of the present invention, the metal level is almost constant regardless of the HCl / H 2 O concentration ratio. There was found. Furthermore, the conventional SC-2
It was found that the diluted hydrochloric acid cleaning solution specified in the present invention had a lower metal level on the wafer surface than the case of using a cleaning solution containing a hydrogen peroxide solution as in cleaning.
【００２２】また、図２において、本発明での規定した
範囲の希薄塩酸により洗浄を施したウェーハ表面のパー
ティクルレベルは、ＨＣｌ／Ｈ2Ｏ濃度比が増加するに
従って悪化することが分かった。Further, in FIG. 2, it was found that the particle level on the surface of the wafer cleaned with dilute hydrochloric acid in the specified range according to the present invention deteriorates as the HCl / H 2 O concentration ratio increases.
【００２３】（実験例２）本発明の洗浄方法を施した後
と、比較例としてＳＣ−１洗浄のみを施した後の基板表
面に付着している各金属の相対量を比較した。図３
（Ａ）にＴＸＲＦ（全反射Ｘ線分析）を用いてウェーハ
表面に付着しているＦｅ，Ｎｉ，Ｃｕ，Ｚｎの相対量を
比較した結果を、図３（Ｂ）にＳＩＭＳ（２次イオン質
量分析法）を用いて基板表面に付着しているＮａとＡｌ
の相対量を比較した結果を示す。(Experimental Example 2) The relative amounts of the respective metals adhering to the substrate surface after the cleaning method of the present invention and after performing only SC-1 cleaning as a comparative example were compared. FIG.
The results of comparing the relative amounts of Fe, Ni, Cu, and Zn adhering to the wafer surface using TXRF (total reflection X-ray analysis) in (A) are shown in FIG. And Al adhering to the substrate surface using the analytical method)
The result of having compared the relative amount of is shown.
【００２４】これより、本発明の洗浄方法を施すことに
よりＦｅ，Ｎｉ，Ｃｕ，Ｚｎ，Ｎａ，Ａｌの金属レベル
が大幅に減少することが分かった。From this, it was found that the metal levels of Fe, Ni, Cu, Zn, Na and Al were significantly reduced by applying the cleaning method of the present invention.
【００２５】また、ＳＩＭＳによる測定結果より、比較
例の洗浄方法を施した後のＡｌレベル、１〜０．７×１
０18atoms/cm3に対し、本発明の洗浄方法を施した後の
Ａｌレベルは、８〜６×１０16atoms/cm3と大幅に減少
することが判明した。From the measurement result by SIMS, the Al level after the cleaning method of the comparative example is 1 to 0.7 × 1.
It was found that the Al level after applying the cleaning method of the present invention to 0 18 atoms / cm 3 was significantly reduced to 8 to 6 × 10 16 atoms / cm 3 .
【００２６】（実験例３）図４にＨｅ−Ｎｅレ−ザを用
いて、本発明の洗浄方法を施した後と希薄塩酸処理のな
い比較例の洗浄方法を施した後の基板表面のパーティク
ルレベルを測定した結果について示す。(Experimental Example 3) FIG. 4 shows the particles on the surface of the substrate after applying the cleaning method of the present invention and the cleaning method of the comparative example without dilute hydrochloric acid treatment using a He-Ne laser. The result of measuring the level is shown below.
【００２７】この図により本発明の洗浄方法を施した後
のパーティクルレベルは、希薄塩酸処理を施していない
比較例の洗浄方法を施したパーティクルレベルとほぼ同
等であり、希薄塩酸処理によりパーティクルレベルが悪
化しないことが判明した。According to this figure, the particle level after the cleaning method of the present invention is almost the same as the particle level after the cleaning method of the comparative example not subjected to the diluted hydrochloric acid treatment. It turned out not to get worse.
【００２８】（実験例４）実施例の洗浄工程を施した基
板と、比較例としてＳＣ−１洗浄のみを施した基板とを
用意し、くもり評価加速試験を行った。試験条件は、常
温から７０℃まで昇温後、７０℃で５分間保持、５℃ま
で降温、５℃で１時間保持を１サイクルとし、３サイク
ル行った。この結果、実施例、比較例の洗浄品共に差異
は認められなかった。(Experimental Example 4) A substrate subjected to the cleaning process of the example and a substrate subjected to only SC-1 cleaning as a comparative example were prepared, and a haze evaluation accelerated test was conducted. The test conditions were such that, after the temperature was raised from room temperature to 70 ° C., the temperature was kept at 70 ° C. for 5 minutes, the temperature was lowered to 5 ° C., and the temperature was kept at 5 ° C. for 1 hour as one cycle. As a result, no difference was observed between the washed products of Examples and Comparative Examples.
【００２９】また、ＣＺ法により形成しＰ型で＜１００
＞方位のウェーハ（抵抗８.５〜１１.５Ω）を２枚用意
し、一方に実施例の洗浄工程を施し、他方に比較例の洗
浄工程を施して耐圧試験を行った。この結果、実施例の
処理を行ったサンプルの耐圧は９.２６ＭＶ／ｃｍであ
り、比較例のサンプルの耐圧は９.１２ＭＶ／ｃｍであ
り、両者共に有意な差は認められなかった。Further, it is formed by the CZ method and is <100 in P type.
Two wafers (resistance: 8.5 to 11.5Ω) were prepared, and one of them was subjected to the cleaning process of the example, and the other was subjected to the cleaning process of the comparative example to perform a pressure resistance test. As a result, the breakdown voltage of the sample subjected to the treatment of the example was 9.26 MV / cm, and the breakdown voltage of the sample of the comparative example was 9.12 MV / cm, and no significant difference was observed between them.
【００３０】[0030]
【発明の効果】以上説明したように、本発明のウェーハ
の表面洗浄方法においては、アンモニア水と過酸化水素
水と純水とを混合してなる混合液を用いてウェーハの表
面を洗浄後、さらに濃度３３〜３８％の塩酸に対して純
水を体積比で１０〜１００００の割合で混合した希薄塩
酸でウェーハを洗浄することを特徴としているため、ウ
ェーハ表面のパーティクルレベルを良好に維持すると共
にウェーハ表面の金属レベルを低減することができる。As described above, in the wafer surface cleaning method of the present invention, after cleaning the surface of the wafer using the mixed solution prepared by mixing ammonia water, hydrogen peroxide solution and pure water, Further, since the wafer is washed with a dilute hydrochloric acid in which pure water is mixed in a volume ratio of 10 to 10,000 with respect to a hydrochloric acid having a concentration of 33 to 38%, the particle level on the wafer surface is maintained at a good level. The metal level on the wafer surface can be reduced.
【００３１】従って本発明のウェーハの表面洗浄方法に
よれば、パーティクルレベル、金属レベルの両方の面か
ら基板表面の清浄度を向上させることができる。Therefore, according to the wafer surface cleaning method of the present invention, the cleanliness of the substrate surface can be improved from both the particle level and metal level surfaces.
【００３２】また希薄塩酸によりウェーハを洗浄後、こ
の洗浄後の希薄塩酸を濾過して、希薄塩酸内に含まれる
０．２０μｍ以上の粒子数を１０個以下に抑えた後、こ
の希薄塩酸を循環させて再びウェーハの洗浄に用いる
と、希薄塩酸の有効利用ができると共に基板表面のパー
ティクルレベルを悪化させる心配がない。After cleaning the wafer with diluted hydrochloric acid, the diluted hydrochloric acid after cleaning is filtered to suppress the number of particles of 0.20 μm or more contained in the diluted hydrochloric acid to 10 or less, and then the diluted hydrochloric acid is circulated. When it is used again for cleaning the wafer, diluted hydrochloric acid can be effectively used and there is no fear of deteriorating the particle level on the substrate surface.
【図１】本発明のウェーハの表面洗浄方法を説明するた
めの工程図である。FIG. 1 is a process chart for explaining a wafer surface cleaning method of the present invention.
【図２】ＨＣｌ／Ｈ2Ｏ濃度に対するパーティクルレベ
ルと表面金属レベルとの関係を示すグラフである。FIG. 2 is a graph showing a relationship between a particle level and a surface metal level with respect to HCl / H 2 O concentration.
【図３】基板表面に付着している金属レベルを示すグラ
フである。FIG. 3 is a graph showing the level of metal adhering to the surface of a substrate.
【図４】基板表面のパーティクルレベルを示すグラフで
ある。FIG. 4 is a graph showing a particle level on the surface of a substrate.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 磯野 光弘 東京都千代田区岩本町３丁目８番16号 日本シリコン株式会社内 (72)発明者 堀 憲治 東京都千代田区岩本町３丁目８番16号 日本シリコン株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Mitsuhiro Isono 3-8 16 Iwamotocho, Chiyoda-ku, Tokyo Japan Silicon Co., Ltd. (72) Kenji Hori 3-8-16 Iwamotocho, Chiyoda-ku, Tokyo Within Japan Silicon Co., Ltd.
Claims (2)
混合してなる混合液を用いてウェーハの表面を洗浄後、
さらに濃度３３〜３８％の塩酸に対して純水を体積比で
１０〜１００００の割合で混合した希薄塩酸でウェーハ
を洗浄することを特徴とするウェーハの表面洗浄方法。1. After cleaning the surface of a wafer using a mixed solution of ammonia water, hydrogen peroxide water and pure water,
Furthermore, the wafer surface cleaning method is characterized in that the wafer is cleaned with diluted hydrochloric acid in which pure water is mixed in a volume ratio of 10 to 10,000 with respect to hydrochloric acid having a concentration of 33 to 38%.
この洗浄後の希薄塩酸を濾過して、希薄塩酸内に含まれ
る０．２０μｍ以上の粒子数を１０個以下に抑えた後、
この希薄塩酸を循環させて再びウェーハの洗浄に用いる
ことを特徴とする請求項１記載のウェーハの表面洗浄方
法。2. After cleaning the wafer with the dilute hydrochloric acid,
After diluting the diluted hydrochloric acid after the washing to suppress the number of particles of 0.20 μm or more contained in the diluted hydrochloric acid to 10 or less,
2. The method for cleaning a surface of a wafer according to claim 1, wherein the diluted hydrochloric acid is circulated and used again for cleaning the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5953391A JP2688293B2 (en) | 1991-03-01 | 1991-03-01 | Wafer surface cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5953391A JP2688293B2 (en) | 1991-03-01 | 1991-03-01 | Wafer surface cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04274324A JPH04274324A (en) | 1992-09-30 |
| JP2688293B2 true JP2688293B2 (en) | 1997-12-08 |
Family
ID=13116003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5953391A Expired - Lifetime JP2688293B2 (en) | 1991-03-01 | 1991-03-01 | Wafer surface cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2688293B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7524771B2 (en) | 2002-10-29 | 2009-04-28 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing method using alkaline solution and acid solution |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003318151A (en) | 2002-04-19 | 2003-11-07 | Nec Electronics Corp | Method of manufacturing semiconductor device |
-
1991
- 1991-03-01 JP JP5953391A patent/JP2688293B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7524771B2 (en) | 2002-10-29 | 2009-04-28 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing method using alkaline solution and acid solution |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04274324A (en) | 1992-09-30 |
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