JP2680065B2 - Plasma cleaning method - Google Patents
Plasma cleaning methodInfo
- Publication number
- JP2680065B2 JP2680065B2 JP63236446A JP23644688A JP2680065B2 JP 2680065 B2 JP2680065 B2 JP 2680065B2 JP 63236446 A JP63236446 A JP 63236446A JP 23644688 A JP23644688 A JP 23644688A JP 2680065 B2 JP2680065 B2 JP 2680065B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- sample stage
- potential
- plasma cleaning
- cleaning method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、プラズマクリーニング方法に係り、特にプ
ラズマ処理が行われる真空処理室内をクリーニングする
のに好適なプラズマクリーニング方法に関するものであ
る。Description: TECHNICAL FIELD The present invention relates to a plasma cleaning method, and more particularly to a plasma cleaning method suitable for cleaning a vacuum processing chamber in which plasma processing is performed.
従来のプラズマ処理装置としては、例えば、特開昭60
−113428号公報に記載のようなものが知られている。As a conventional plasma processing apparatus, for example, JP-A-60
The one described in JP-A-113428 is known.
上記従来技術は、プラズマクリーニング時のプラズマ
電位により試料台にイオンが入射して該試料台がスパッ
タされるため、ダミー試料を設置してプラズマクリーニ
ングを実施していた。In the above-mentioned conventional technique, since ions enter the sample stage due to the plasma potential during plasma cleaning and the sample stage is sputtered, a dummy sample is installed to perform plasma cleaning.
本発明の目的は、試料台方向へのプラズマ中のイオン
入射によるスパッタ作用によって生じる汚染を無くすこ
とのできるプラズマクリーニング方法を提供することに
ある。An object of the present invention is to provide a plasma cleaning method capable of eliminating contamination caused by a sputtering action due to ion injection in plasma toward the sample stage.
上記目的は、真空処理室内にプラズマを発生させて前
記真空処理室内をクリーニングするプラズマクリーニン
グ方法において、プラズマは真空処理室内に設けられた
試料台に電力を印加することなく独立に生成され、プラ
ズマの電位に対し試料台の電位をほぼ等しいか正電位に
し、試料台へのイオンの入射を無くして真空処理室内を
クリーニングすることにより、達成される。The above-mentioned object is to generate a plasma in the vacuum processing chamber to clean the vacuum processing chamber.In the plasma cleaning method, the plasma is generated independently without applying power to a sample stage provided in the vacuum processing chamber, This is achieved by setting the potential of the sample stage to be approximately equal to the potential or a positive potential, eliminating the incidence of ions on the sample stage, and cleaning the vacuum processing chamber.
試料台の電位はプラズマ電位より低くなることがない
ので、試料台の方向へはプラズマ中のイオンが入射され
ることはなく、イオンのスパッタ作用による汚染を防ぐ
ことができる。Since the potential of the sample stage does not become lower than the plasma potential, the ions in the plasma do not enter the direction of the sample stage, and it is possible to prevent the contamination due to the sputtering action of the ions.
以下、本発明の一実施例を第１図により説明する。 Hereinafter, an embodiment of the present invention will be described with reference to FIG.
本実施例は、一例としてマイクロ波プラズマ装置に応
用したものである。This example is applied to a microwave plasma device as an example.
試料台１に試料、例えば、ウェハ７をセットし、マグ
ネトロン５および磁場発生コイル４により放電管８内で
プラズマ10を発生させ、該プラズマを利用してウェハ７
のエッチングを行う。ウェハ７の処理枚数が多くなると
放電管８内等が汚染されるため、クリーニングが必要と
なる。このプラズマクリーニング時に、アース電極９に
対しプラズマが正電位となるためアース電極９に対して
試料台１を同一電位もしくは負電位にすると試料台１の
ウェハセット面にイオンが入射して試料台１のウェハセ
ット面がスパッタされてしまう。ところでプラズマの電
位はアース電極９に対して数Ｖ〜数十Ｖの正電位とな
る。これを防止するため、プラズマ電位相当以上の正電
位をアース電極９に対して試料台１にバイアス印加部３
によって印加する。つまり、プラズマの電位に対し試料
台１の電位をほぼ等しいか正電位にし試料台１のウェハ
セット面へのイオンの入射をなくして試料台１のウェハ
セット面のスパッタを防止する。なお、ウェハ７のエッ
チング前に高周波電源２によりバイアス印加可能であ
る。A sample, for example, a wafer 7 is set on the sample table 1, a plasma 10 is generated in the discharge tube 8 by the magnetron 5 and the magnetic field generating coil 4, and the wafer 7 is used by using the plasma.
Is etched. When the number of processed wafers 7 increases, the inside of the discharge tube 8 and the like is contaminated, and cleaning is required. During this plasma cleaning, the plasma has a positive potential with respect to the earth electrode 9, so that if the sample stage 1 is set to the same potential or a negative potential with respect to the earth electrode 9, ions are incident on the wafer set surface of the sample stage 1 and the sample stage 1 The wafer set surface of is sputtered. By the way, the electric potential of the plasma becomes a positive electric potential of several V to several tens V with respect to the earth electrode 9. In order to prevent this, a positive potential equal to or higher than the plasma potential is applied to the sample stage 1 with respect to the ground electrode 9 by the bias applying unit 3
Is applied. That is, the potential of the sample stage 1 is set to be approximately equal to or positive than the potential of the plasma so that ions are not incident on the wafer set face of the sample stage 1 to prevent sputtering on the wafer set face of the sample stage 1. A bias can be applied by the high frequency power source 2 before the etching of the wafer 7.
本実施例によれば、プラズマクリーニングにおいて、
ダミーウェハを用いずとも試料台のスパッタを防止でき
放電管内等の汚染を防止できる。また、本実施例によれ
ば、プラズマクリーニング時における試料台へのダミー
ウェハのセット，除去操作が不要となるので、プラズマ
クリーニング操作が簡単になる。更に、このため、プラ
ズマクリーニングに要する時間を短縮でき装置の稼動
率，スループットを向上できる。また、ダミーウェハの
セット，除去操作が不要であるため、プラズマクリーニ
ングの自動化が更に容易になる。According to this embodiment, in plasma cleaning,
Sputtering of the sample table can be prevented without using a dummy wafer, and the inside of the discharge tube can be prevented from being contaminated. Further, according to the present embodiment, it is not necessary to set and remove the dummy wafer on the sample stage during plasma cleaning, so that the plasma cleaning operation is simplified. Further, for this reason, the time required for plasma cleaning can be shortened and the operating rate and throughput of the apparatus can be improved. Further, since the setting and removing operations of the dummy wafer are unnecessary, automation of plasma cleaning becomes easier.
なお、上記一実施例では、いわゆる有磁場型のマイク
ロ波プラズマエッチング装置を例に挙げたが、本発明
は、これに特に限定されるものではない。例えば、いわ
ゆる無磁場型のマイクロ波プラズマエッチング装置や有
磁場型，無磁場型マイクロ波プラズマCVD装置等にも適
用できることはいうまでもない。In addition, in the above-mentioned one embodiment, a so-called magnetic field type microwave plasma etching apparatus has been described as an example, but the present invention is not particularly limited to this. For example, it goes without saying that it can be applied to a so-called non-magnetic field type microwave plasma etching apparatus, a magnetic field type or non-magnetic field type microwave plasma CVD apparatus, and the like.
本発明によれば、プラズマクリーニングにおける試料
台方向へのプラズマ中のイオン入射を防止することがで
きるので、イオンによるスパッタ作用によって生じる汚
染を無くすことができるという効果がある。According to the present invention, it is possible to prevent ions from entering the plasma toward the sample stage during plasma cleaning, and thus it is possible to eliminate the contamination caused by the sputtering action of the ions.
第１図は、本発明の一実施例のマイクロ波プラズマエッ
チング装置の装置構成図である。 １……試料台、３……バイアス印加部、４……磁場発生
用コイル、５……マグネトロン、６……導波管、７……
ウェハ、８……放電管、９……アース電極FIG. 1 is a device configuration diagram of a microwave plasma etching device according to an embodiment of the present invention. 1 ... Sample stage, 3 ... Bias applying unit, 4 ... Magnetic field generating coil, 5 ... Magnetron, 6 ... Waveguide, 7 ...
Wafer, 8 ... Discharge tube, 9 ... Ground electrode
Claims (1)
真空処理室内をクリーニングするプラズマクリーニング
方法において、前記プラズマは前記真空処理室内に設け
られた試料台に電力を印加することなく独立に生成さ
れ、前記プラズマの電位に対し前記試料台の電位をほぼ
等しいか正電位にし、前記試料台へのイオンの入射を無
くして前記真空処理室内をクリーニングすることを特徴
とするプラズマクリーニング方法。1. A plasma cleaning method for generating plasma in a vacuum processing chamber to clean the vacuum processing chamber, wherein the plasma is independently generated without applying power to a sample stage provided in the vacuum processing chamber. The plasma cleaning method is characterized in that the potential of the sample stage is set to be approximately equal to or a positive potential with respect to the potential of the plasma, and the ions are not incident on the sample stage to clean the vacuum processing chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63236446A JP2680065B2 (en) | 1988-09-22 | 1988-09-22 | Plasma cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63236446A JP2680065B2 (en) | 1988-09-22 | 1988-09-22 | Plasma cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0286127A JPH0286127A (en) | 1990-03-27 |
| JP2680065B2 true JP2680065B2 (en) | 1997-11-19 |
Family
ID=17000871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63236446A Expired - Lifetime JP2680065B2 (en) | 1988-09-22 | 1988-09-22 | Plasma cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2680065B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07142444A (en) * | 1993-11-12 | 1995-06-02 | Hitachi Ltd | Microwave plasma processing system and method |
| JP3516523B2 (en) * | 1995-05-30 | 2004-04-05 | アネルバ株式会社 | Plasma processing equipment |
| JP5740447B2 (en) | 2013-10-10 | 2015-06-24 | 株式会社東芝 | Manufacturing method of semiconductor device |
| CN114059014A (en) * | 2021-10-08 | 2022-02-18 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | Sample stage with inductive coupling discharge cleaning function |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60158629A (en) * | 1984-01-30 | 1985-08-20 | Hitachi Ltd | Microwave plasma processor |
| JPS6376434A (en) * | 1986-09-19 | 1988-04-06 | Hitachi Ltd | Plasma treatment equipment |
-
1988
- 1988-09-22 JP JP63236446A patent/JP2680065B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0286127A (en) | 1990-03-27 |
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