JP2679273B2 - Thin film manufacturing method - Google Patents
Thin film manufacturing methodInfo
- Publication number
- JP2679273B2 JP2679273B2 JP17585089A JP17585089A JP2679273B2 JP 2679273 B2 JP2679273 B2 JP 2679273B2 JP 17585089 A JP17585089 A JP 17585089A JP 17585089 A JP17585089 A JP 17585089A JP 2679273 B2 JP2679273 B2 JP 2679273B2
- Authority
- JP
- Japan
- Prior art keywords
- targets
- high frequency
- thin film
- frequency power
- film manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、高周波電源を供給した複数個のターゲット
を同時にスパッタリングすることによる薄膜の製造方法
に関するものである。Description: TECHNICAL FIELD The present invention relates to a method for producing a thin film by simultaneously sputtering a plurality of targets supplied with a high frequency power source.
従来の技術 従来、SiO2,SiO,ZnS等の誘電体材料の薄膜の製造に
は、高周波スパッタリングによる方法が用いられてき
た。これら誘電体薄膜を、特に光ディスク等の保護膜あ
るいは干渉膜として用いる場合の製造では、特性の安定
した膜を高速で成膜することが要求される。その方法と
しては、大型のターゲットを用いる、複数個のターゲッ
トを用いて別々にスパッタリングする、などが考えられ
る。特に、複数個のターゲットを用いたスパッタリング
は 小型のターゲットを利用できる。 2. Description of the Related Art Conventionally, a method by high frequency sputtering has been used for manufacturing a thin film of a dielectric material such as SiO 2 , SiO, ZnS. In the case of using these dielectric thin films as a protective film or an interference film for an optical disk or the like, it is required to form a film having stable characteristics at a high speed. As a method thereof, it is conceivable to use a large target, or to separately use a plurality of targets for sputtering. In particular, sputtering using a plurality of targets can use a small target.
ターゲットの利用効率を上げることが容易である。 It is easy to improve the utilization efficiency of the target.
単位面積当たりの投入パワーを大きくできる。 The input power per unit area can be increased.
などの利点を有する薄膜の製造方法である。It is a method of manufacturing a thin film having advantages such as.
発明が解決しようとする課題 しかしながら上記の従来の構成の高周波多元スパッタ
リング装置では、各ターゲットへ供給している高周波電
源の発振周波数を一致させることがむずかしく、各ター
ゲットと基板間のバイアス電圧の周波数に差が生じ、そ
のため移動周波数の異なるプラズマ間の干渉により、成
膜速度が低下するという課題を有していた。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention However, in the above-described conventional high-frequency multi-source sputtering apparatus, it is difficult to match the oscillation frequency of the high-frequency power source supplied to each target, and the frequency of the bias voltage between each target and the substrate is There is a problem that a difference occurs, and therefore, the film formation rate decreases due to interference between plasmas having different moving frequencies.
本発明は上記従来の課題を解決するもので、複数個の
ターゲットのプラズマ間の干渉をなくすとともに、高速
で成膜可能な高周波多元スパッタリング装置を提供する
ことを目的とする。The present invention solves the above-mentioned conventional problems, and an object of the present invention is to provide an RF multi-component sputtering apparatus which can eliminate the interference between plasmas of a plurality of targets and can form a film at high speed.
課題を解決するための手段 この目的を解決するために本発明の多元高周波スパッ
タリング装置による薄膜製造方法では、ターゲット間に
磁性体材料の遮蔽板を設け、複数ターゲット各々に供給
する高周波電源からのバイアス電圧の発振周波数の差を
500Hz以上に設定するという構成を有している。Means for Solving the Problems In order to solve this object, in the thin film manufacturing method by the multi-source high frequency sputtering apparatus of the present invention, a shielding plate made of a magnetic material is provided between targets, and a bias from a high frequency power source supplied to each of the plurality of targets is provided. The difference in the oscillation frequency of the voltage
It has a configuration of setting to 500Hz or more.
または、ターゲット間に磁性体材料の遮蔽板を設け、
ターゲットに供給する高周波電源の発振機能を完全に同
調させるという構成を有している。Or, provide a shield plate of magnetic material between the targets,
It has a configuration in which the oscillation function of the high-frequency power supply supplied to the target is perfectly tuned.
作用 この構成により、複数個のターゲットのプラズマ間の
干渉を防止することができ、高速で成膜可能な高周波多
元スパッタリング装置による薄膜製造方法を実現するこ
とができる。Operation With this configuration, it is possible to prevent interference between plasmas of a plurality of targets and to realize a thin film manufacturing method using a high-frequency multi-source sputtering apparatus capable of high-speed film formation.
実施例 以下本発明の一実施例について、図面を参照しながら
説明する。An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例における高周波多元スパッ
タリング装置の構成図を示すものである。第１図におい
て、１は高周波電源（Ａ）、２は高周波電源（Ｂ）、３
はターゲットＡ、４はターゲットＢ、５は基板、６は基
板ホルダー、７は磁性体材料の遮蔽板、８は放電により
発生したプラズマ、９は真空室である。FIG. 1 shows a block diagram of a high frequency multi-source sputtering apparatus in an embodiment of the present invention. In FIG. 1, 1 is a high frequency power source (A), 2 is a high frequency power source (B), 3
Is a target A, 4 is a target B, 5 is a substrate, 6 is a substrate holder, 7 is a shielding plate made of a magnetic material, 8 is plasma generated by electric discharge, and 9 is a vacuum chamber.
以上のように構成された本実施例の二元高周波スパッ
タリング装置において、高周波電源（Ａ）１の発振周波
数を13,56MHz,高周波電源（Ｂ）２の発振周波数を13,56
1MHzに設定した。In the binary high frequency sputtering apparatus of the present embodiment configured as described above, the oscillation frequency of the high frequency power source (A) 1 is 13,56 MHz, and the oscillation frequency of the high frequency power source (B) 2 is 13,56 MHz.
It was set to 1MHz.
従来の構成では、高周波電源（Ａ）の周波数と高周波
電源（Ｂ）の周波数とがほぼ一致しているが、わずかに
異なっており、その差が10Hzから100Hz程度あるため
に、干渉が起こり、放電が不安定となるために安定な成
膜ができなかった。In the conventional configuration, the frequency of the high frequency power supply (A) and the frequency of the high frequency power supply (B) are almost the same, but they are slightly different, and the difference is about 10 Hz to 100 Hz, so that interference occurs, A stable film could not be formed because the discharge became unstable.
それに対し本実施例の構成では、ターゲットに印加す
る周波数の差が1KHZと非常に大きいため、それぞれのタ
ーゲットのプラズマが周波数の差に追従しきれなくな
る。しかも、各ターゲット間には磁性体材料の遮蔽板を
設けているため、プラズマ間での干渉効果を低下させる
ことができ、高速で安定した成膜を実現できるものであ
る。実際に、本実施例の構成でのターゲット個数に対す
る成膜速度は第３図に示すような結果が得られた。この
ように、ターゲット間に磁性体材料の遮蔽板を設け、タ
ーゲットに供給する高周波電源の周波数の差を500Hz以
上に設定することにより、ターゲット間の干渉効果がな
く、ターゲット個数に比例した成膜を実現できる。On the other hand, in the structure of the present embodiment, the frequency difference applied to the targets is as large as 1 KHZ, so that the plasma of each target cannot follow the frequency difference. Moreover, since the shielding plate made of a magnetic material is provided between the targets, the interference effect between plasmas can be reduced, and high-speed and stable film formation can be realized. Actually, the film formation rate with respect to the number of targets in the structure of this example was obtained as shown in FIG. In this way, by providing a shielding plate of magnetic material between the targets and setting the frequency difference of the high frequency power supply supplied to the targets to 500 Hz or more, there is no interference effect between the targets and film formation proportional to the number of targets. Can be realized.
また、第２図は別の実施例における高周波多元スパッ
タリング装置の構成図を示すものである。第２図におい
て、11は高周波電源（ａ）、12は高周波電源（ｂ）、10
はこれら高周波電源（ａ），（ｂ）に共通の信号発振
器、３は高周波電源（ａ）からバイアス電圧を供給して
いるターゲット（ａ）、４は高周波電源（ｂ）からバイ
アス電圧を供給しているターゲット（ｂ）、５は基板、
６は基板ホルダー、７は磁性体材料の遮蔽板、８は放電
により発生したプラズマ、９は真空室である。Further, FIG. 2 is a block diagram of a high frequency multi-source sputtering apparatus in another embodiment. In FIG. 2, 11 is a high frequency power source (a), 12 is a high frequency power source (b), 10
Is a signal oscillator common to these high frequency power supplies (a) and (b), 3 is a target (a) which supplies a bias voltage from the high frequency power supply (a), and 4 is a bias voltage which is supplied from the high frequency power supply (b). Target (b), 5 is a substrate,
6 is a substrate holder, 7 is a shield plate made of a magnetic material, 8 is plasma generated by electric discharge, and 9 is a vacuum chamber.
本実施例では高周波電源11,12の高周波信号は同一の
信号発振器10からの信号を用いるために、周波数は全く
一致している。この結果、各ターゲットのプラズマ間で
周波数の差による移動度の差は生じない。また、ターゲ
ット間には磁性体材料の遮蔽板17を設けているため、タ
ーゲットのプラズマ間での干渉を低下させることがで
き、高速で安定した成膜を実現できる。この結果も第１
の実施例の場合と同様にターゲット個数に比例した成膜
を現実できるものである。In this embodiment, since the high frequency signals of the high frequency power supplies 11 and 12 use the same signal from the signal oscillator 10, the frequencies are completely the same. As a result, there is no difference in mobility due to the difference in frequency between the plasmas of the targets. Further, since the shield plate 17 made of a magnetic material is provided between the targets, it is possible to reduce the interference between the plasmas of the targets, and it is possible to realize stable film formation at high speed. This result is also the first
As in the case of the above embodiment, it is possible to actually form a film in proportion to the number of targets.
以上のように本実施例によれば、ターゲット表面に発
生するプラズマ間の干渉効果を低減でき、高速で安定し
た薄膜の製造装置及び薄膜の製造方法を実現できるもの
である。As described above, according to the present embodiment, it is possible to reduce the interference effect between plasmas generated on the target surface, and to realize a high-speed and stable thin-film manufacturing apparatus and thin-film manufacturing method.
発明の効果 本発明は、高周波電源を供給した複数ターゲットから
スパッタリングにより薄膜を製造する方法において、タ
ーゲット間に磁性体材料の遮蔽板を介在させることによ
り、ターゲットのプラズマ間の干渉効果を低下させるこ
とができ、さらにターゲットに供給する高周波電源の周
波数の差を500Hz以上にするか、あるいは、複数のター
ゲット各々にバイアス電圧を供給する複数の高周波電源
に、同一の信号発振器からの高周波信号を用いることに
より、高速で安定した成膜を実現できる薄膜製造装置及
び薄膜製造方法を実現できるものである。EFFECTS OF THE INVENTION The present invention, in a method of manufacturing a thin film by sputtering from a plurality of targets supplied with a high frequency power source, reduces the interference effect between the plasma of the targets by interposing a shield plate of a magnetic material between the targets. In addition, the difference in the frequency of the high frequency power supply supplied to the target should be 500Hz or more, or the high frequency signal from the same signal oscillator should be used for the multiple high frequency power supplies that supply the bias voltage to each of the multiple targets. Thus, it is possible to realize a thin film manufacturing apparatus and a thin film manufacturing method capable of realizing stable film formation at high speed.
第１図は本発明の一実施例における高周波多元スパッタ
リング装置の構成図、第２図は本発明の別の実施例にお
ける高周波多元スパッタリング装置の構成図、第３図は
ターゲット個数に対する成膜速度の変化を示す図であ
る。 1,2……高周波電源、3,4……ターゲット、５……基板、
６……基板ホルダー、７……遮蔽板、８……放電による
プラズマ、９……真空室、10……発振器、11,12……高
周波電源。FIG. 1 is a block diagram of a high frequency multi-source sputtering apparatus according to an embodiment of the present invention, FIG. 2 is a block diagram of a high frequency multi-source sputtering apparatus according to another embodiment of the present invention, and FIG. It is a figure which shows change. 1,2 …… High frequency power supply, 3,4 …… Target, 5 …… Board,
6 ... Substrate holder, 7 ... Shielding plate, 8 ... Plasma by discharge, 9 ... Vacuum chamber, 10 ... Oscillator, 11, 12 ... High frequency power supply.
Claims (6)
に高周波電源からのバイアス電圧を供給しスパッタリン
グにより薄膜の製造をする方法であって、前記複数ター
ゲット間に、磁性材料の遮蔽板を介在させたことを特徴
とする薄膜製造方法。1. A method for producing a thin film by sputtering a plurality of targets and a bias voltage from a high frequency power source to each of the plurality of targets, wherein a shielding plate made of a magnetic material is interposed between the plurality of targets. And a method for manufacturing a thin film.
からのバイアス電圧の発振周波数の差が500Hz以上であ
ることを特徴とする請求項１記載の薄膜製造方法。2. The thin film manufacturing method according to claim 1, wherein the difference in the oscillation frequency of the bias voltage from the high frequency power source supplied to each of the plurality of targets is 500 Hz or more.
給する複数の高周波電源に、同一の発振器からの高周波
信号を用いることを特徴とする請求項１記載の薄膜製造
方法。3. The thin film manufacturing method according to claim 1, wherein a high frequency signal from the same oscillator is used for a plurality of high frequency power supplies for supplying a bias voltage to each of the plurality of targets.
に高周波電源からのバイアス電圧を供給しスパッタリン
グにより薄膜の製造をする装置であって、前記複数ター
ゲット間に、磁性材料の遮蔽板を介在させた構成を有す
ることを特徴とする薄膜製造装置。4. An apparatus for producing a thin film by sputtering a plurality of targets and a bias voltage from a high frequency power source to each of the plurality of targets, wherein a shielding plate of a magnetic material is interposed between the plurality of targets. A thin film manufacturing apparatus comprising:
からのバイアス電圧の発振周波数の差が500Hz以上であ
ることを特徴とする請求項４記載の薄膜製造装置。5. The thin film manufacturing apparatus according to claim 4, wherein the difference in the oscillation frequency of the bias voltage from the high frequency power source supplied to each of the plurality of targets is 500 Hz or more.
給する複数の高周波電源に、同一の発振器からの高周波
信号を用いることを特徴とする請求項４記載の薄膜製造
装置。6. The thin film manufacturing apparatus according to claim 4, wherein high frequency signals from the same oscillator are used for a plurality of high frequency power supplies for supplying a bias voltage to each of the plurality of targets.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17585089A JP2679273B2 (en) | 1989-07-07 | 1989-07-07 | Thin film manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17585089A JP2679273B2 (en) | 1989-07-07 | 1989-07-07 | Thin film manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0339470A JPH0339470A (en) | 1991-02-20 |
| JP2679273B2 true JP2679273B2 (en) | 1997-11-19 |
Family
ID=16003299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17585089A Expired - Fee Related JP2679273B2 (en) | 1989-07-07 | 1989-07-07 | Thin film manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2679273B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4766368B2 (en) * | 2005-03-10 | 2011-09-07 | 独立行政法人物質・材料研究機構 | Bipolar pulse sputtering film forming apparatus and method for manufacturing thin film material produced using the same |
| KR100944868B1 (en) * | 2009-01-07 | 2010-03-04 | 윤지훈 | Magnetron sputtering apparatus |
-
1989
- 1989-07-07 JP JP17585089A patent/JP2679273B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0339470A (en) | 1991-02-20 |
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