JP2673967B2 - Cu alloy lead frame material for high strength semiconductor devices - Google Patents

Cu alloy lead frame material for high strength semiconductor devices

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Publication number
JP2673967B2
JP2673967B2 JP2146000A JP14600090A JP2673967B2 JP 2673967 B2 JP2673967 B2 JP 2673967B2 JP 2146000 A JP2146000 A JP 2146000A JP 14600090 A JP14600090 A JP 14600090A JP 2673967 B2 JP2673967 B2 JP 2673967B2
Authority
JP
Japan
Prior art keywords
lead frame
frame material
alloy
high strength
alloy lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2146000A
Other languages
Japanese (ja)
Other versions
JPH0441631A (en
Inventor
錬成 二塚
誠司 熊谷
淳一 熊谷
益弘 泉田
誠司 野口
Original Assignee
三菱伸銅 株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 三菱伸銅 株式会社 filed Critical 三菱伸銅 株式会社
Priority to JP2146000A priority Critical patent/JP2673967B2/en
Publication of JPH0441631A publication Critical patent/JPH0441631A/en
Application granted granted Critical
Publication of JP2673967B2 publication Critical patent/JP2673967B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、高強度を有し、したがって半導体装置の
高集積化および軽量化に十分対応することができ、かつ
導電性、耐熱性、およびはんだ付け性にもすぐれたCu合
金製リードフレーム材に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention has high strength, and therefore can sufficiently cope with high integration and weight reduction of a semiconductor device, and has conductivity, heat resistance, and The present invention relates to a Cu alloy lead frame material having excellent solderability.

〔従来の技術〕[Conventional technology]

従来、ICやLSIなどの半導体装置のリードフレーム材
として、例えば特公昭64−449号公報に記載されるとお
りの、 Fe:2〜2.4%、P:0.001〜0.1%、 Zn:0.01〜1%、Mg:0.001〜0.1%、 を含有し、残りがCuと不可避不純物からなる組成(以上
重量%、以下%は重量%を示す)を有するCu合金で構成
されたものが知られている。
Conventionally, as a lead frame material for semiconductor devices such as IC and LSI, for example, as described in Japanese Patent Publication No. 64-449, Fe: 2 to 2.4%, P: 0.001 to 0.1%, Zn: 0.01 to 1% , Mg: 0.001 to 0.1%, and the balance is composed of Cu and unavoidable impurities, and is composed of a Cu alloy having a composition (above wt%, hereafter wt% indicates wt%).

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

一方、近年の半導体装置の高集積化および軽量化はめ
ざましく、これに伴ない、これの構造部材であるリード
フレームにもより一層の薄肉化が要求されているが、上
記の従来Cu合金製リードフレーム材は、リードフレーム
に要求される導電性、耐熱性、およびはんだ付け性には
すぐれるものの、強度が十分でなく、このため上記従来
Cu合金製リードフレーム材の場合、満足な薄肉化をはか
ることができないのが現状である。
On the other hand, in recent years, semiconductor devices have been highly integrated and lightened, and along with this, the lead frame, which is a structural member thereof, is required to be further thinned. Although the frame material has excellent conductivity, heat resistance, and solderability required for the lead frame, it does not have sufficient strength.
In the current situation, Cu alloy lead frame materials cannot be made sufficiently thin.

〔課題を解決するための手段〕[Means for solving the problem]

そこで、本発明者等は、上述のような観点から、上記
の従来Cu合金製リードフレーム材に着目し、これのより
一層の強度向上をはかるべく研究を行なった結果、上記
の従来Cu合金製リードフレーム財を構成するCu合金に、
合金成分としてSnを0.005〜0.05%含有させると、この
結果のリードフレーム材は、すぐれた導電性、耐熱性、
およびはんだ付け性を保持した状態で、一段と高強度を
もつようになり、したがって薄肉化が可能となり、半導
体装置の高集積化および軽量化に対応することができる
ようになるという研究結果を得たのである。
Therefore, the present inventors, from the above-mentioned viewpoint, pay attention to the above-mentioned conventional Cu alloy lead frame material, and as a result of conducting research to further improve the strength thereof, the above-mentioned conventional Cu alloy Cu alloys that make up lead frame goods,
When 0.005 to 0.05% of Sn is contained as an alloy component, the resulting lead frame material has excellent conductivity, heat resistance, and
And the soldering property is maintained, the strength becomes much higher, and therefore the thickness can be reduced, and it is possible to cope with the high integration and weight reduction of the semiconductor device. Of.

この発明は、上記研究結果にもとづいてなされたもの
であって、 Fe:2〜2.4%、P:0.035〜0.1%、 Zn:0.47〜1%、Mg:0.001〜0.05%、 Sn:0.005〜0.05%、 を含有し、残りがCuと不可避不純物からなる組成を有す
るCu合金で構成してなる半導体装置のCu合金製リードフ
レーム材に特徴を有するものである。
The present invention has been made based on the above research results, and Fe: 2 to 2.4%, P: 0.035 to 0.1%, Zn: 0.47 to 1%, Mg: 0.001 to 0.05%, Sn: 0.005 to 0.05%. %, And the remainder is a Cu alloy lead frame material for a semiconductor device made of a Cu alloy having a composition of Cu and inevitable impurities.

つぎに、この発明のリードフレーム材を構成するCu合
金において、成分組成を上記の通りに限定した理由を説
明する。
Next, the reason why the composition of the Cu alloy constituting the lead frame material of the present invention is limited as described above will be explained.

(A) Fe Fe成分には、強度を向上させる作用があるが、その含
有量が2%未満では所望の高強度を確保することができ
ず、一方その含有量が2.4%を越えると、導電率が低下
するようになると共に、素地中にFeの巨大析出物が形成
されるようになって圧延加工性が劣化するようになるこ
とから、その含有量を2〜2.4%と定めた。
(A) Fe Fe component has the effect of improving the strength, but if the content is less than 2%, the desired high strength cannot be ensured, while if the content exceeds 2.4%, it becomes conductive. The content of Fe is set to 2 to 2.4% because the Fe content decreases and the Fe precipitates are formed in the matrix to deteriorate the rolling workability.

(b) P P成分には、脱酸作用があるほか、Feと結合して素地
中に微細に分散する鉄りん化物を形成し、もって強度、
導電性、および耐熱性を向上させる作用があるが、その
含有量が0.035%未満では前記作用に所望のすぐれた効
果が得られず、一方その含有量が0.1%を越えると、導
電性が低下するようになることから、その含有量を0.03
5〜0.1%と定めた。
(B) The P P component has a deoxidizing action and also forms an iron phosphide that finely disperses in the matrix by combining with Fe, and thus strength,
Although it has the effect of improving conductivity and heat resistance, if its content is less than 0.035%, the desired excellent effect cannot be obtained, while if its content exceeds 0.1%, conductivity decreases. Therefore, the content of 0.03
It was set at 5 to 0.1%.

(c) Zn Zn成分には、P成分と同様に脱酸作用があるほか、強
度、伸び、および導電率の変化率を少なくする、すなわ
ちこれらの特性を安定化する作用があるが、その含有量
が0.47%未満では前記作用に所望のすぐれた効果が得ら
れず、一方1%を越えて含有させても前記作用が飽和
し、より一層の向上効果が得らればかりでなく、導電性
が低下するようになることから、その含有量を0.47〜1
%と定めた。
(C) Zn The Zn component has a deoxidizing action similar to the P component, and also has the action of reducing the rate of change in strength, elongation, and conductivity, that is, stabilizing these characteristics. If the amount is less than 0.47%, the desired and excellent effect cannot be obtained, while if the content exceeds 1%, the above effect is saturated, and not only the further improving effect is obtained, but also the conductivity is improved. Since it will decrease, the content is 0.47 to 1
%.

(d) Mg Mg成分には、伸びおよび導電性を損なうことなく、強
度、耐熱性、およびはんだ性付けを向上させる作用があ
るが、その含有量が0.001%未満では前記作用に所望の
効果が得られず、一方その含有量が0.05%を越えても、
Snによる強度改善に顕著な向上効果が得られないことか
ら、その含有量を0.001〜0.05%と定めた。
(D) Mg The Mg component has an effect of improving strength, heat resistance, and solderability without impairing elongation and conductivity, but if its content is less than 0.001%, the desired effect is obtained in the above operation. Not obtained, while the content exceeds 0.05%,
Since no significant improvement effect on the strength improvement by Sn can be obtained, its content was set to 0.001 to 0.05%.

(e) Sn Sn成分には、FeおよびMgと共存した状態で、はんだ付
け性および伸びを損なうことなく、強度を著しく向上さ
せ、さらに耐熱性も向上させる作用があるが、その含有
量が0.005%未満では前記作用に所望の効果が得られ
ず、一方その含有量が0.05%を越えると導電性が低下す
るようになることから、その含有量を0.005〜0.05%と
定めた。
(E) Sn The Sn component, in the state of coexisting with Fe and Mg, has an effect of significantly improving strength and heat resistance without impairing solderability and elongation, but the content thereof is 0.005 If the content is less than 0.1%, the desired effect cannot be obtained, while if the content exceeds 0.05%, the electrical conductivity decreases, so the content was defined as 0.005 to 0.05%.

〔実施例〕〔Example〕

つぎに、この発明のCu合金製リードフレーム材を実施
例により具体的に説明する。
Next, the Cu alloy lead frame material of the present invention will be specifically described by way of examples.

通常の低周波溝型誘導炉を用い、それぞれ第1表に示
される成分組成をもったCu合金溶湯を調製し、半連続鋳
造法にて厚さ:150mm×幅:400mm×長さ:1500mmの寸法を
もった鋳塊とした後、この鋳塊に圧延開始温度:900℃に
て熱間圧延を施して厚さ:11mmの熱延板とし、ついで水
冷後、前記熱延板の上下面を面削して厚さ:10mmとした
状態で、1次冷間圧延を施して、その厚さを2.5mmと
し、 続いて温度:550℃に3時間保持の条件で1次時効処理を
施した後、ロールバフ研磨にて表面の酸化膜および汚れ
を除去した状態で、2次冷間圧延を施して、厚さ:0.833
mmとし、さらに温度:500℃に2時間保持の2次時効処理
を施した後、同じくロールバフ研磨を施した状態で、仕
上圧延率:70%にて最終冷間圧延を行なって厚さ:0.25mm
の条材とし、これに最終的に250〜350℃の範囲内の所定
温度に15分間保持の条件で歪取り焼鈍を行ない、酸洗す
ることにより本発明Cu合金製リードフレーム材(以下、
本発明フレーム材という)1〜6および比較Cu合金製リ
ードフレーム材(以下、比較フレームという)1〜9を
それぞれ製造した。
Using a normal low-frequency groove-type induction furnace, Cu alloy melts having the composition shown in Table 1 were prepared, and the thickness: 150 mm × width: 400 mm × length: 1500 mm was obtained by the semi-continuous casting method. After making an ingot with dimensions, hot rolling is performed on this ingot at a rolling start temperature: 900 ° C to form a hot-rolled sheet having a thickness of 11 mm, and after water cooling, the upper and lower surfaces of the hot-rolled sheet are In the state of chamfering and thickness of 10 mm, primary cold rolling is performed to make the thickness 2.5 mm, Then, after performing a primary aging treatment at a temperature of 550 ° C. for 3 hours, a secondary cold rolling was performed with the surface oxide film and dirt removed by roll buffing, and the thickness was: 0.833
mm, and after performing a secondary aging treatment at a temperature of 500 ° C. for 2 hours, and also performing roll buff polishing, final cold rolling at a finish rolling rate of 70% and a thickness of 0.25 mm
The strip material of the present invention is finally subjected to strain relief annealing at a predetermined temperature within a range of 250 to 350 ° C. for 15 minutes, and then subjected to pickling to obtain a Cu alloy lead frame material of the present invention (hereinafter,
Inventive frame materials) 1 to 6 and comparative Cu alloy lead frame materials (hereinafter referred to as comparative frames) 1 to 9 were manufactured.

なお、比較フレーム材1〜6は、いずれもこれを構成
するCu合金の合金成分のうちのいずれかの成分含有量
(第1表に※印を付す)がこの発明の範囲から外れた組
成をもつものである。
The comparative frame materials 1 to 6 each have a composition in which the content of any one of the alloy components of the Cu alloy constituting the same (marked with * in Table 1) is outside the range of the present invention. It has.

ついで、この結果得られた各種のフレーム材につい
て、引張強さ、伸び、導電率、および軟化点を測定し、
さらにはんだ付け性を評価する目的で、65%Sn−40%Pb
の組成を有するはんだ材を浸漬法によりめっきし、これ
を大気中、温度:150℃に500時間保持の実用条件にモデ
ィファイした条件で加熱した後、180゜曲げて再び元に
戻す曲げを行ない、曲げ部分におけるはんだ材の剥離の
有無を観察した。これらの結果を第1表に示した。
Then, for each of the various frame materials obtained as a result, the tensile strength, elongation, conductivity, and the softening point were measured,
Furthermore, for the purpose of evaluating solderability, 65% Sn-40% Pb
The solder material having the composition of is plated by the dipping method, heated in the atmosphere at a temperature of 150 ° C. for 500 hours under the conditions modified to practical conditions, and then bent by 180 ° and bent back again. The presence or absence of peeling of the solder material in the bent portion was observed. The results are shown in Table 1.

〔発明の効果〕〔The invention's effect〕

第1表に示される結果から、本発明フレーム材1〜6
は、いずれも上記従来Cu合金製リードフレーム材に相当
する組成を有する比較フレーム材8に比して一段と高強
度を有し、かつ導電性、耐熱性、およびはんだ付け性に
ついても、これと同等あるいはこれ以上のすぐれた特性
をもつことが明らかであり、一方、比較フレーム材1〜
9に見られるように、これを構成するCu合金の合金成分
のうちのいずれかの成分含有量でもこの発明の範囲から
外れると、上記特性のうちの少なくともいずれかの特性
が劣ったものになることが明らかである。
From the results shown in Table 1, the present invention frame materials 1 to 6
Are much stronger than the comparative frame material 8 having a composition equivalent to that of the conventional Cu alloy lead frame material, and are equivalent in conductivity, heat resistance, and solderability. Or it is clear that it has more excellent characteristics, while the comparative frame materials 1 to
As can be seen in No. 9, if the content of any one of the alloy components of the Cu alloy that constitutes it falls outside the scope of the present invention, at least one of the above properties becomes inferior. It is clear.

上述のように、この発明のCu合金製リードフレーム材
は、高強度を有し、かつ導電性、耐熱性、およびはんだ
付け性にもすぐれ、かつ上記従来Cu合金製リードフレー
ム材と比較して一段と高い強度を有するので、リードフ
レームの薄肉化および形状複雑化を可能とし、半導体装
置の高集積化および軽量化に寄与するところ大なる特性
を有するのである。
As described above, the Cu alloy lead frame material of the present invention has high strength, and also has excellent conductivity, heat resistance, and solderability, and compared with the conventional Cu alloy lead frame material. Since it has a much higher strength, it allows the lead frame to be thinner and has a complicated shape, and has great characteristics in contributing to higher integration and weight reduction of the semiconductor device.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 熊谷 淳一 福島県会津若松市扇町128―7 三菱伸 銅株式会社若松製作所内 (72)発明者 泉田 益弘 福島県会津若松市扇町128―7 三菱伸 銅株式会社若松製作所内 (72)発明者 野口 誠司 福島県会津若松市扇町128―7 三菱伸 銅株式会社若松製作所内 (56)参考文献 特開 昭63−93325(JP,A) 特開 平2−111828(JP,A) 特開 平2−111833(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Junichi Kumagai 128-7 Ogimachi, Aizuwakamatsu, Fukushima Prefecture Mitsubishi Shindoh Co., Ltd. Wakamatsu Works (72) Inventor Masuhiro Izumida 128-7, Ogimachi, Aizuwakamatsu, Fukushima Prefecture Mitsubishi Shindoh Wakamatsu Manufacturing Co., Ltd. (72) Inventor Seiji Noguchi 128-7 Ogimachi, Aizuwakamatsu City, Fukushima Prefecture Mitsubishi Shindoh Co., Ltd. Wakamatsu Manufacturing Co., Ltd. (56) Reference JP 63-93325 (JP, A) JP HEI 2- 111828 (JP, A) JP-A-2-111833 (JP, A)

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】Fe:2〜2.4%、P:0.035〜0.1%、 Zn:0.47〜1%、Mg:0.001〜0.05%、 Sn:0.005〜0.05%、 を含有し、残りがCuと不可避不純物からなる組成(以上
重量%)を有するCu合金で構成したことを特徴とする高
強度を有する半導体装置のCu合金製リードフレーム材。
1. Fe: 2 to 2.4%, P: 0.035 to 0.1%, Zn: 0.47 to 1%, Mg: 0.001 to 0.05%, Sn: 0.005 to 0.05%, the rest being Cu and inevitable impurities. A lead frame material made of a Cu alloy for a semiconductor device having high strength, characterized in that the lead frame material is made of a Cu alloy having a composition (at least by weight).
JP2146000A 1990-06-04 1990-06-04 Cu alloy lead frame material for high strength semiconductor devices Expired - Lifetime JP2673967B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2146000A JP2673967B2 (en) 1990-06-04 1990-06-04 Cu alloy lead frame material for high strength semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2146000A JP2673967B2 (en) 1990-06-04 1990-06-04 Cu alloy lead frame material for high strength semiconductor devices

Publications (2)

Publication Number Publication Date
JPH0441631A JPH0441631A (en) 1992-02-12
JP2673967B2 true JP2673967B2 (en) 1997-11-05

Family

ID=15397838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2146000A Expired - Lifetime JP2673967B2 (en) 1990-06-04 1990-06-04 Cu alloy lead frame material for high strength semiconductor devices

Country Status (1)

Country Link
JP (1) JP2673967B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW442576B (en) * 1998-03-10 2001-06-23 Mitsubishi Shindo Kk Copper alloy and copper alloy sheet, excellent in resistance against blanking die wear
JP6210887B2 (en) 2014-01-18 2017-10-11 株式会社神戸製鋼所 Fe-P copper alloy sheet with excellent strength, heat resistance and bending workability
JP6210910B2 (en) 2014-03-18 2017-10-11 株式会社神戸製鋼所 Fe-P copper alloy sheet with excellent strength, heat resistance and bending workability

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6293325A (en) * 1985-10-18 1987-04-28 Mitsubishi Shindo Kk Cu alloy lead material for semiconductor device
JPH02111833A (en) * 1988-10-20 1990-04-24 Sumitomo Metal Mining Co Ltd Copper alloy for lead frame
JPH02111828A (en) * 1988-10-20 1990-04-24 Sumitomo Metal Mining Co Ltd Manufacture of copper alloy for lead frame
JPH02111850A (en) * 1988-10-20 1990-04-24 Sumitomo Metal Mining Co Ltd Manufacture of copper alloy for lead frame

Also Published As

Publication number Publication date
JPH0441631A (en) 1992-02-12

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