JP2650530B2 - Gas phase reactor for semiconductor device manufacturing - Google Patents
Gas phase reactor for semiconductor device manufacturingInfo
- Publication number
- JP2650530B2 JP2650530B2 JP24138891A JP24138891A JP2650530B2 JP 2650530 B2 JP2650530 B2 JP 2650530B2 JP 24138891 A JP24138891 A JP 24138891A JP 24138891 A JP24138891 A JP 24138891A JP 2650530 B2 JP2650530 B2 JP 2650530B2
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- JP
- Japan
- Prior art keywords
- gas
- reaction
- compartment
- pressure
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＩＣ、ＬＳＩなどの半
導体装置の製造、より詳しくは、半導体装置の薄膜形成
や薄膜のエッチングを行う気相反応装置に関する。半導
体装置の薄膜にはＡｌ、Ｗ、Ｔｉ、Ｓｉ、ＧａＡｓ、Ｓ
ｉＯ2 、Ｓｉ3 Ｎ 4 などがあり、これらの成膜とエッチ
ングが製造過程で行われている。そして、成膜では、厚
さの均一性、汚染防止、良好な再現性、良好な全面成長
あるいは選択成長などが求められており、エッチングで
も、半導体基板の全面での均一性、汚染防止などが求め
られており、これらを実現する気相反応装置（ＣＶＤ装
置、エッチング装置）が要求されている。BACKGROUND OF THE INVENTION The present invention relates to a semiconductor device such as an IC or an LSI.
Manufacture of conductor devices, more specifically, thin film formation of semiconductor devices
And a gas phase reactor for etching a thin film. Semiconduct
Al, W, Ti, Si, GaAs, S
iOTwo, SiThreeN FourThere are such film formation and etch
Is performed during the manufacturing process. And, in film formation,
Uniformity, prevention of contamination, good reproducibility, good overall growth
Alternatively, selective growth is required, and etching
Also require uniformity over the entire surface of the semiconductor substrate, prevention of contamination, etc.
Gas phase reactors (CVD equipment)
And etching equipment).
【０００２】[0002]
【従来の技術】従来の成膜装置（ＣＶＤ装置）やエッチ
ング装置の気相反応装置は、基本的には、排気系を有す
る反応室と、該反応室内で半導体基板を担持している支
持台と、該反応室の上部に設けられたプロセスガス（反
応ガス、エッチングガスなど）供給具（供給管とそれに
接続したシャワー）とを備えてなる。支持台は搭載した
基板を所定温度に加熱するヒータあるいは温度上昇防止
の冷却器を内蔵している。成膜の場合には、反応室を排
気し、半導体基板を加熱した状態で反応ガスをシャワー
から反応室に供給して、半導体基板上で反応により膜材
料が堆積して所定の膜を形成する。プロセスガスのソー
スがガスであれば、それを直接にシャワーに導入し、あ
るいは、ソースが液体であれば、それを事前に気化させ
てからシャワーに導入し、それから複数ガスと混合させ
ている。また、エッチングの場合には、反応室を排気
し、半導体基板をレジスト過熱防止のために冷却した状
態でエッチングガスを成膜の場合と同様にシャワーから
反応室に供給して、形成されている膜（または半導体基
板）を選択的にエッチングする。特に、エッチングで
は、プラズマを利用してエッチング効果（作用）を高め
ており、プラズマ発生用の電極が反応室に備えられてい
る。2. Description of the Related Art Conventionally, a gas phase reaction apparatus such as a film forming apparatus (CVD apparatus) or an etching apparatus basically includes a reaction chamber having an exhaust system, and a support for supporting a semiconductor substrate in the reaction chamber. And a process gas (reaction gas, etching gas, etc.) supply tool (supply pipe and a shower connected thereto) provided at the upper part of the reaction chamber. The support base has a built-in heater for heating the mounted substrate to a predetermined temperature or a cooler for preventing the temperature from rising. In the case of film formation, the reaction chamber is evacuated, a reaction gas is supplied from a shower to the reaction chamber while the semiconductor substrate is heated, and a film material is deposited on the semiconductor substrate by reaction to form a predetermined film. . If the source of the process gas is a gas, it is introduced directly into the shower, or if the source is a liquid, it is vaporized beforehand and introduced into the shower, and then mixed with multiple gases. In the case of etching, the reaction chamber is evacuated, and the semiconductor substrate is cooled to prevent overheating of the resist, and an etching gas is supplied from the shower to the reaction chamber in the same manner as in the case of film formation. The film (or the semiconductor substrate) is selectively etched. In particular, in etching, plasma is used to enhance the etching effect (action), and an electrode for plasma generation is provided in the reaction chamber.
【０００３】[0003]
【発明が解決しようとする課題】プロセスガスとして供
給された複数のガスを混合する操作にて、流量が異なる
と初期（立ち上がり）段階では理想的に混じらず、半導
体基板に対して異なる混合比の反応ガスが流れることに
なる。さらに、シャワー導入前に、供給管にバルブ
（弁）が取り付けられおり、デッドスペースがある。そ
して、液体ソースでは上述の如くにシャワーへはガス供
給とするようにキャリアガスのバブリングで気化させて
該キャリアガスと共に送られる。In the operation of mixing a plurality of gases supplied as process gases, if the flow rates are different, they are not ideally mixed at the initial (rise) stage, but have different mixing ratios with respect to the semiconductor substrate. The reaction gas will flow. Furthermore, before introducing the shower, a valve is attached to the supply pipe, and there is a dead space. In the liquid source, as described above, the gas is vaporized by bubbling of the carrier gas so as to supply the gas to the shower, and is sent together with the carrier gas.
【０００４】これらのことから、半導体基板上の初期形
成膜の組成および厚さの不均一が生じ、連続処理（繰返
し処理）では成膜速度に変動が生じる。反応室内の圧力
変動があると、そのことによって反応室内の副生成物を
浮遊させて、それが汚染物質として半導体基板に付着す
ることがある。また、選択成長での選択性の劣化や堆積
膜の剥がれを招くことがある。さらに、バブリングを経
て気化したガスを有する反応ガスでは、その搬送途中で
配管内面に凝縮する場合あったりで、供給量が安定しな
い。[0004] For these reasons, the composition and thickness of the initially formed film on the semiconductor substrate become non-uniform, and the film forming speed fluctuates in continuous processing (repeated processing). When there is a pressure fluctuation in the reaction chamber, by-products in the reaction chamber are suspended, which may adhere to the semiconductor substrate as a contaminant. In addition, the selectivity may be degraded in the selective growth or the deposited film may be peeled off. Further, the supply amount of a reaction gas having a gas that has been vaporized through bubbling is not stable because the reaction gas may be condensed on the inner surface of the pipe during the transportation.
【０００５】本発明の目的は、反応室内の圧力変動を無
くすようにし、ガス混合を確実に行って初期段階の成長
でも安定した混合比の反応ガスとし、かつ再現性を良く
することを可能にする半導体装置製造用気相反応装置を
提供することである。SUMMARY OF THE INVENTION It is an object of the present invention to eliminate pressure fluctuations in a reaction chamber, to reliably perform gas mixing, to obtain a reaction gas having a stable mixture ratio even during initial stage growth, and to improve reproducibility. To provide a gas-phase reactor for manufacturing a semiconductor device.
【０００６】[0006]
【課題を解決するための手段】上述の目的が、排気系を
有する反応室と、該反応室内で半導体基板を担持してい
る支持台と、前記反応室の上部に設けられたプロセスガ
ス供給具とを備えてなる半導体装置製造用気相反応装置
において、供給具が半導体基板とほぼ平行配置で半導体
基板の上方に位置するプロセスガスシャワーであり、該
プロセスガスシャワーは気化ないし希釈用上側区画室
と、反応圧力調整ガスの下側区画室との少なくとも２室
からなり、該上側区画室から該下側区画室の底面まで延
びる多数の供給細管と該下側区画室の底面の多数開孔と
がシャワーガス噴出口であり、上側区画室はその内部に
仕切り弁を有し、該仕切り弁の上方にソース液体または
ソースガスの供給管と、気化または希釈用ガスの供給管
と、切換バルブ付き排気管とを備え、前記下側区画室は
反応圧力調整ガスを供給するバルブ付きの供給管を備え
ていることを特徴とする半導体装置製造用気相反応装置
によって達成される。SUMMARY OF THE INVENTION An object of the present invention is to provide a reaction chamber having an exhaust system, a support for supporting a semiconductor substrate in the reaction chamber, and a process gas supply tool provided on the upper part of the reaction chamber. Wherein the supply tool is a process gas shower located above the semiconductor substrate in a substantially parallel arrangement with the semiconductor substrate, and the process gas shower is an upper compartment for vaporization or dilution. And a plurality of supply thin tubes comprising at least two chambers of a lower compartment of the reaction pressure regulating gas and extending from the upper compartment to the bottom of the lower compartment, and a plurality of openings in the bottom of the lower compartment. Is a shower gas outlet, and the upper compartment has a gate valve therein, with a supply pipe for a source liquid or source gas, a supply pipe for a gas for vaporization or dilution, and a switching valve above the gate valve. A trachea, the lower compartment is achieved by the semiconductor device manufacturing gas phase reactor, characterized in that it comprises a supply pipe with a valve for supplying a reaction pressure control gas.
【０００７】さらに、上側区画室と下側区画室との間に
別のソースガスの中間区画室が設けられ、該中間区画室
から下側区画室の底面まで延びる多数の供給細管があ
り、さらに、上側区画室からの供給細管は該中間区画室
を貫通しており、３室構成の気相反応装置であっても良
い。Further, another intermediate compartment for the source gas is provided between the upper compartment and the lower compartment, and there are a number of supply thin tubes extending from the intermediate compartment to the bottom surface of the lower compartment. The supply thin tube from the upper compartment penetrates the intermediate compartment, and may be a three-chamber gas phase reactor.
【０００８】[0008]
【作用】本発明ではシャワーを複数の区画室で多層構造
的に構成しており、先ず、上側区画室にて液体ソースの
気化ないしソースガスの希釈を行い、この反応ガスを反
応室に流さずにバルブ付き排気管から流すことができ、
成膜開始前にこの反応ガスを所定条件のものにすること
ができる。下側区画室に供給する不活性ガス（ないし水
素ガス）によって反応室の圧力を事前に反応圧力に調整
することができ、この不活性ガスの反応圧力調整ガスの
供給を停止すると同時に、上側区画室から反応ガスを排
気から反応室への供給に切り換えて、反応室に反応ガス
を圧力変動なしに導入することができる。According to the present invention, the shower is formed in a multilayer structure with a plurality of compartments. First, the liquid source is vaporized or the source gas is diluted in the upper compartment, and the reaction gas is not flowed into the reaction chamber. Through the exhaust pipe with a valve,
This reaction gas can be made to have a predetermined condition before the start of film formation. The pressure in the reaction chamber can be adjusted to the reaction pressure in advance by the inert gas (or hydrogen gas) supplied to the lower compartment, and the supply of the reaction pressure adjusting gas of the inert gas is stopped, and at the same time, the upper compartment is stopped. By switching the reaction gas from the chamber to the supply from the exhaust to the reaction chamber, the reaction gas can be introduced into the reaction chamber without pressure fluctuation.
【０００９】中間区画室を設けることで、所定条件にし
た別の反応ガスをここに送り、それをシャワーから反応
室へ供給して、シャワーを出た所から上側区画室からの
反応ガスと確実に混合される。この別の反応ガスの反応
室への供給タイミングは、反応圧力調節ガスの供給を停
止すると同時に排気状態から中間区画室へ切り換えるこ
とによる。By providing the intermediate compartment, another reaction gas of a predetermined condition is sent here, and the reaction gas is supplied from the shower to the reaction chamber. Is mixed. The supply timing of this another reaction gas to the reaction chamber is based on switching from the exhaust state to the intermediate compartment at the same time as stopping the supply of the reaction pressure adjusting gas.
【００１０】[0010]
【実施例】以下、添付図面を参照して、本発明の実施態
様例によって本発明を詳細に説明する。図１に本発明に
係る半導体装置製造用気相反応装置の概略断面を示す。
反応装置は、排気系を有する反応室１と、該反応室１内
で半導体基板２を担持する支持台３とを備え、そして、
半導体基板２の上方で反応室１に取り付けられた反応ガ
ス導入シャワー４を備えている。支持台３は従来通りに
その内部に温度制御手段５を備え、成膜処理の場合には
過熱するヒータを、そしてエッチング処理の場合には温
度上昇防止の冷却器を備えている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 shows a schematic cross section of a gas phase reactor for manufacturing a semiconductor device according to the present invention.
The reaction apparatus includes a reaction chamber 1 having an exhaust system, a support table 3 for supporting a semiconductor substrate 2 in the reaction chamber 1, and
A reaction gas introduction shower 4 attached to the reaction chamber 1 above the semiconductor substrate 2 is provided. The support 3 is provided with a temperature control means 5 therein as in the prior art. The support 3 is provided with a heater for overheating in the case of a film forming process and a cooler for preventing a temperature rise in the case of an etching process.
【００１１】図示したシャワー４は、上側区画室７、中
間区画室８および下側区画室９の３層構造であり、一体
ではあるが、それぞれ独立している。上側区画室７はそ
の内部に仕切り弁Ｖ１を備え、シール１１に当接した時
に上空間と下空間とに分割できる。この上側区画室７の
上空間に第１反応ガスの液体ソース１２を供給する配管
１３と、液化を促進するキャリアガスＡを供給する配管
１４とが接続され、ここでソース液体は気化してキャリ
アガスとで第１反応ガス形成する。この上空間には排気
管１５も接続されており、上側区画室７の上空間が仕切
り弁Ｖ１によって閉じられているときに、第１反応ガス
ＢがバルブＶ２を経て排気管１５から排出される。供給
管（配管）１３および１４にはマスフローコントローラ
（流量制御器）１６および１７が組み込まれている。液
体ソース１２は密封容器１８に収容されており、所定温
度に保持され、配管１９を通しての加圧ガス（Ｈｅ、Ａ
ｒ）Ｃによって配管１３から上側区画室７へ供給され
る。この密封容器１８にはマスフローコントローラ２０
の付いた排気管２１が接続されている。そして、この上
空間には圧力計Ｐ1 がセットされており、仕切り弁Ｖ１
を閉じ、バルブＶ２を開いた状態で液体ソース１２およ
びキャリアガスＡを供給して、上空間で気化させ、この
時の圧力を計測して、所定値になるようにマスフローコ
ントローラ１６および１７を制御するようになってい
る。マスフローコントローラ１６の代わりに排気管２１
のマスフローコントローラ２０を制御することもでき
る。The illustrated shower 4 has a three-layer structure of an upper compartment 7, an intermediate compartment 8 and a lower compartment 9, and is independent but independent. The upper compartment 7 is provided with a gate valve V1 therein, and can be divided into an upper space and a lower space when it comes into contact with the seal 11. A pipe 13 for supplying a liquid source 12 of the first reactive gas to a space above the upper compartment 7 and a pipe 14 for supplying a carrier gas A for promoting liquefaction are connected. A first reaction gas is formed with the gas. An exhaust pipe 15 is also connected to the upper space, and when the upper space of the upper compartment 7 is closed by the gate valve V1, the first reaction gas B is discharged from the exhaust pipe 15 via the valve V2. . The supply pipes (piping) 13 and 14 incorporate mass flow controllers (flow controllers) 16 and 17, respectively. The liquid source 12 is housed in a sealed container 18, maintained at a predetermined temperature, and pressurized gas (He, A
r) C is supplied from the pipe 13 to the upper compartment 7. The sealed container 18 includes a mass flow controller 20.
Exhaust pipe 21 is connected. It is approved set pressure gauge P 1 in the upper space, the partition valve V1
Is closed, and the liquid source 12 and the carrier gas A are supplied in a state where the valve V2 is opened to vaporize in the upper space, the pressure at this time is measured, and the mass flow controllers 16 and 17 are controlled so as to reach a predetermined value. It is supposed to. Exhaust pipe 21 instead of mass flow controller 16
Can be controlled.
【００１２】液体ソース１２の代わりにソースガスを使
用することもでき、この時には、上空間にてキャリアガ
スＡによって希釈されて、所定圧力の第１反応ガスとな
る。そして、仕切り弁Ｖ１を開きかつバルブＶ２を閉じ
て、このような第１反応ガスＢを多数の供給細管２２を
通してシャワー４の底面から反応室１内へ供給すること
になる。In place of the liquid source 12, a source gas can be used. At this time, the source gas is diluted with the carrier gas A in the upper space to become the first reaction gas at a predetermined pressure. Then, the gate valve V1 is opened and the valve V2 is closed, and such a first reaction gas B is supplied into the reaction chamber 1 from the bottom surface of the shower 4 through a number of supply thin tubes 22.
【００１３】中間区画室８に第２反応ガスＤの供給配管
２５が接続されており、この配管２５にはバルブＶ３と
排気につながったバルブＶ４とがある。さらに、配管２
５にはマスフローコントローラ２６が組み込まれてい
て、第２反応ガスＤを所定の圧力値にしてある。成膜
（エッチング）時に、バルブＶ４を閉じ同時にバルブＶ
３を開き、第２反応ガスＤを中間区画室８へ供給し、そ
こから多数の供給細管２７を通してシャワー４の底面か
ら反応室１内へ供給することになる。A supply pipe 25 for the second reaction gas D is connected to the intermediate compartment 8, and this pipe 25 has a valve V3 and a valve V4 connected to exhaust. Furthermore, piping 2
5, a mass flow controller 26 is incorporated, and the second reaction gas D is set to a predetermined pressure value. During film formation (etching), the valve V4 is closed and at the same time, the valve V4 is closed.
3 is opened, the second reaction gas D is supplied to the intermediate compartment 8, from which it is supplied into the reaction chamber 1 from the bottom surface of the shower 4 through a number of supply thin tubes 27.
【００１４】下側区画室９には配管３１が接続され、こ
こを通して不活性ガスないし水素ガスの反応調整ガスＥ
がマスフローコントローラ３２およびバルブＶ５によっ
て制御されている。反応室１には圧力計Ｐ2 がセットさ
れており、バルブＶ５を開いて、反応調整ガスＥを下側
区画室９へその底面の多数開孔３３から反応室１内へ供
給し、その時の圧力を測定し、所定の反応圧力値になる
ようにマスフローコントローラ３２を制御する。A pipe 31 is connected to the lower compartment 9 through which an inert gas or a reaction control gas E of hydrogen gas is supplied.
Are controlled by the mass flow controller 32 and the valve V5. The reaction chamber 1 are set the pressure gauge P 2, by opening the valve V5, the reaction control gas E is supplied from the lower compartment 9 navel of multiple apertures 33 of the bottom surface into the reaction chamber 1, at that time The pressure is measured, and the mass flow controller 32 is controlled so as to have a predetermined reaction pressure value.
【００１５】上述した気相反応装置において、次のよう
にして成膜処理を行うことができる。先ず、半導体基板
２を支持台３の上に搭載してから、反応室１を排気し
て、高真空状態にし、反応調整ガスＥ（不活性ガスまた
は水素ガス）を下側区画室９を通して反応室１へ供給す
る。反応室１の圧力を圧力計Ｐ2 で計測し、成膜反応圧
力値になるようにマスフローコントローラ３２を調整す
る。この時、バルブＶ５は図２に示すように「開」の状
態にある。In the above-described gas phase reaction apparatus, a film forming process can be performed as follows. First, after mounting the semiconductor substrate 2 on the support 3, the reaction chamber 1 is evacuated to a high vacuum state, and the reaction adjusting gas E (inert gas or hydrogen gas) is reacted through the lower compartment 9. Supply to room 1. The pressure in the reaction chamber 1 is measured by the pressure gauge P 2, to adjust the mass flow controller 32 so that the film-forming reaction pressure value. At this time, the valve V5 is in an "open" state as shown in FIG.
【００１６】仕切り弁Ｖ１を閉じかつバルブＶ２を開い
て（図２）、上側区画室７の上空間に液体ソース１２を
配管１３を通して、さらに気化（希釈）ガスのキャリア
ガスＡを配管１４を通して供給する。この上空間で液体
ソース１２が気化され、第１反応ガスＢとして配管１４
を通して排気される。そして、この上空間の圧力計Ｐ 1
で第１反応ガスＢの圧力を測定し、反応室１に送ったと
きに、第２反応ガスＤとで上述の成膜反応圧力値になる
ようにマスフローコントローラ１６および１７を調整す
る。[0016] Gate valve V1 is closed and valve V2 is opened.
(FIG. 2), the liquid source 12 is placed in the upper space of the upper compartment 7.
Through the pipe 13, the carrier of the vaporized (diluted) gas
Gas A is supplied through a pipe 14. Liquid in the space above
The source 12 is vaporized and becomes the first reactant gas B in the pipe 14
Exhausted through. And the pressure gauge P in this upper space 1
And the pressure of the first reaction gas B was measured and sent to the reaction chamber 1.
At this time, the above-mentioned film forming reaction pressure value with the second reaction gas D is obtained.
Adjust the mass flow controllers 16 and 17
You.
【００１７】第２反応ガスＤをマスフローコントローラ
２６によって所定圧力に調整し、バルブＶ４を開いて、
排気状態にしておく。図２に示すように、上述の準備工
程が完了したしたところで、半導体基板２の上に所定の
薄膜を成長（形成）するために、気相反応処理を開始す
る。そのためには、バルブＶ２、Ｖ４およびＶ５を閉
じ、同時にバルブＶ１およびＶ３を開く。このようにし
て第１反応ガスＢおよび第２反応ガスＤをシャワー４か
ら反応室１内へ供給し、シャワー４を出た所でこれらガ
スは混合され、半導体基板２の上で反応生成物が所定の
薄膜となる。The second reaction gas D is adjusted to a predetermined pressure by the mass flow controller 26, the valve V4 is opened,
Keep it exhausted. As shown in FIG. 2, when the above-described preparation step is completed, a vapor phase reaction process is started to grow (form) a predetermined thin film on the semiconductor substrate 2. To do so, valves V2, V4 and V5 are closed and valves V1 and V3 are simultaneously opened. In this way, the first reaction gas B and the second reaction gas D are supplied from the shower 4 into the reaction chamber 1, and these gases are mixed at the place where the shower 4 exits, and the reaction product is formed on the semiconductor substrate 2. It becomes a predetermined thin film.
【００１８】例１ 上述した気相反応装置（ＣＶＤ装置）において、シャワ
ーでの中間区画室を使用しないで、半導体基板の上にア
ルミニウム（Ａｌ）膜を次のようにして形成する。液体
ソース１２にＡｌ（ＣＨ3 ）Ｈ（dimethyl-aluminum hy
dride : DMAH) を用い、気化用ガスＡおよび反応圧力調
整ガスＥに水素ガス（Ｈ2 ）を用いる。Example 1 In the above-described vapor phase reaction apparatus (CVD apparatus), an aluminum (Al) film is formed on a semiconductor substrate as follows, without using an intermediate compartment in a shower. Al (CH 3 ) H (dimethyl-aluminum hy)
dride: DMAH), and hydrogen gas (H 2 ) is used as the vaporizing gas A and the reaction pressure adjusting gas E.
【００１９】反応圧力調整ガスＥによる反応室圧力Ｐ2
＝２２ｍＴｏｒｒとする。上側区画室の上空間の圧力Ｐ
1 ＝１１０ｍＴｏｒｒとなり、これは排気管１５の直径
が反応室１の排気系での排気管の直径よりも小さいた
め、Ｐ2 よりも大きいが、反応室への供給時には調整圧
Ｐ2 と一致する。圧力Ｐ1 の構成は、気化後のソースガ
スの圧力ＰDMAH＝１０ｍＴｏｒｒと、気化用ガスＡの圧
力ＰH2＝１００ｍＴｏｒｒとからなる。Reaction chamber pressure P 2 by reaction pressure adjusting gas E
= 22 mTorr. Pressure P in the upper space of the upper compartment
1 = 110 mTorr, which is larger than P 2 because the diameter of the exhaust pipe 15 is smaller than the diameter of the exhaust pipe in the exhaust system of the reaction chamber 1, but coincides with the adjustment pressure P 2 during supply to the reaction chamber. . Configuration of the pressure P 1 is composed of a pressure P DMAH = 10 mTorr source gas after vaporization, the pressure P H2 = 100 mTorr of vaporized gas A.
【００２０】半導体基板温度を２２０℃とする。反応圧
力調整ガス（水素ガス）Ｅの供給を停止し、同時に仕切
り弁Ｖ１を開いて、反応ガスを反応室１へ送って、圧力
ＰDMAH＝２ｍＴｏｒｒおよびＰH2＝２０ｍＴｏｒｒとな
り、半導体基板上にアルミニウム膜を形成する。 例２ 上述した気相反応装置（ＣＶＤ装置）において、半導体
基板にチタン化合物（ＴｉＳｉx 、ＴｉＮ）の膜を次の
ようにして形成する。The semiconductor substrate temperature is set to 220 ° C. The supply of the reaction pressure adjusting gas (hydrogen gas) E is stopped, and at the same time, the gate valve V1 is opened, and the reaction gas is sent to the reaction chamber 1 so that the pressures P DMAH = 2 mTorr and P H2 = 20 mTorr. Form a film. In Example 2 above gas phase reactor (CVD apparatus), the titanium compound semiconductor substrate (TiSi x, TiN) to form a film of as follows.
【００２１】液体ソースの代わりにＴｉＣｌ4 を用い、
希釈用ガスＡおよび反応圧力調整ガスＥに水素ガス（Ｈ
2 ）を用い、そして、第２反応ガスＤとしてＳｉＨ4 、
Ｓｉ 2 Ｈ6 またはＮＨ3 、Ｎ2 Ｈ4 を用いる。反応圧力
調整ガスＥによる反応室圧力Ｐ2 ＝１００ｍＴｏｒｒと
する。上側区画室の上空間は圧力Ｐ1 ＝２００ｍＴｏｒ
ｒで、ＴｉＣｌ4 のソースガス圧力Ｐからなる。Instead of a liquid source, TiClFourUsing
Hydrogen gas (H) is used as the dilution gas A and the reaction pressure adjusting gas E.
Two) And SiH as the second reaction gas DFour,
Si TwoH6Or NHThree, NTwoHFourIs used. Reaction pressure
Reaction chamber pressure P by regulating gas ETwo= 100mTorr
I do. The pressure above the upper compartment is pressure P1= 200mTorr
r, TiClFourOf the source gas pressure P.
【００２２】第２反応ガスＤの圧力は、ＴｉＳｉx の場
合に、ＰSiHx＝１０ｍＴｏｒｒとし、ＴｉＮの場合に、
ＰNH3 ＝８０ｍＴｏｒｒとする。半導体基板温度を３０
０〜７００℃とする。反応圧力調整ガス（水素ガス）Ｅ
の供給を停止し、バルブＶ４を閉め、同時に仕切り弁Ｖ
１とバルブＶ３とを開いて、反応ガスを反応室１へ送っ
て、ＴｉＣｌ 4 圧力Ｐ＝１０ｍＴｏｒｒ、ＰH2＝８０ｍ
ＴｏｒｒおよびＳｉＨy 圧力Ｐ＝１０ｍＴｏｒｒとな
り、半導体基板上にＴｉＳｉx 膜を形成する。ＴｉＮ膜
の場合には、ＰH2＝１０ｍＴｏｒｒおよびＮＨ3 圧力Ｐ
＝８０ｍＴｏｒｒとする。The pressure of the second reaction gas D is TiSixPlace
Then PSiHx= 10 mTorr, and in the case of TiN,
PNH3= 80 mTorr. Semiconductor substrate temperature 30
0 to 700 ° C. Reaction pressure adjusting gas (hydrogen gas) E
Is stopped, the valve V4 is closed, and the gate valve V
1 and the valve V3 are opened to send the reaction gas to the reaction chamber 1.
And TiCl FourPressure P = 10mTorr, PH2= 80m
Torr and SiHyPressure P = 10 mTorr
TiSi on the semiconductor substratexForm a film. TiN film
In the case ofH2= 10 mTorr and NHThreePressure P
= 80 mTorr.
【００２３】例３ 上述した気相反応装置（ＣＶＤ装置）において、半導体
基板にＳｉＯ2 膜を次のようにして形成する。液体ソー
スとしてＴＥＯＳを用い、気化用ガスＡおよび反応圧力
調整ガスＥに窒素ガス（Ｎ2 ）を用い、そして、第２反
応ガスＤとしてＯ2 、Ｏ3 またはＨ2 Ｏを用いる。Example 3 In the above-described vapor phase reaction apparatus (CVD apparatus), an SiO 2 film is formed on a semiconductor substrate as follows. TEOS is used as the liquid source, nitrogen gas (N 2 ) is used as the vaporizing gas A and the reaction pressure adjusting gas E, and O 2 , O 3 or H 2 O is used as the second reaction gas D.
【００２４】反応圧力調整ガスＥによる反応室圧力ＰN2
＝２Ｔｏｒｒとする。上側区画室の上空間の圧力Ｐ1 ＝
１１Ｔｏｒｒとして、これは気化後のソースガスの圧力
ＰTEOSＰ＝１Ｔｏｒｒと、気化用ガスＡの圧力ＰN2＝１
０Ｔｏｒｒとからなる。第２反応ガス（Ｏ2 ）Ｄの圧力
Ｐ＝１Ｔｏｒｒとする。Reaction chamber pressure P N2 by reaction pressure adjusting gas E
= 2 Torr. Pressure P 1 in upper space of upper compartment =
At 11 Torr, this is the pressure of the source gas after vaporization P TEOS P = 1 Torr and the pressure of the vaporization gas A P N2 = 1
0 Torr. The pressure P of the second reaction gas (O 2 ) D is set to 1 Torr.
【００２５】半導体基板温度を３００℃とする。反応圧
力調整ガス（窒素ガス）Ｅの供給を停止し、バルブＶ４
を閉め、同時に仕切り弁Ｖ１とバルブＶ３とを開いて、
反応ガスを反応室１へ送って、ＴＥＯＳ圧力Ｐ≒0.１Ｔ
ｏｒｒ、ＰN2≒１ＴｏｒｒおよびＯ2 圧力Ｐ＝１Ｔｏｒ
ｒとなり、半導体基板上にＳｉＯ2 膜を形成する。The semiconductor substrate temperature is set to 300 ° C. The supply of the reaction pressure adjusting gas (nitrogen gas) E is stopped, and the valve V4
, And at the same time, open the gate valve V1 and the valve V3,
The reaction gas is sent to the reaction chamber 1 and the TEOS pressure P ≒ 0.1T
orr, P N2 ≒ 1 Torr and O 2 pressure P = 1 Torr
r, and an SiO 2 film is formed on the semiconductor substrate.
【００２６】例４ 上述した気相反応装置をプラズマエッチング装置として
用い、反応室内部に公知の高周波印加電極を配置し、シ
ャワーでの中間区画室を使用しないで、半導体基板の上
に形成したＳｉＯ2 膜を次のようにしてエッチングす
る。液体ソースの代わりにＨＢｒエッチングガスを用
い、希釈用ガスＡおよび反応圧力調整ガスＥに窒素ガス
（Ｎ2 ）を用いる。Example 4 Using the above-described gas phase reaction apparatus as a plasma etching apparatus, a well-known high-frequency application electrode was disposed inside the reaction chamber, and a SiO2 layer formed on a semiconductor substrate was formed without using an intermediate compartment in a shower. Etch the two films as follows. An HBr etching gas is used in place of the liquid source, and a nitrogen gas (N 2 ) is used as the diluting gas A and the reaction pressure adjusting gas E.
【００２７】反応圧力調整ガスＥによる反応室圧力Ｐ2
＝２０ｍＴｏｒｒとする。上側区画室の上空間の圧力Ｐ
1 ＝１００ｍＴｏｒｒはＨＢｒエッチングガス圧からな
る。半導体基板温度を冷却して−６０℃とする。反応圧
力調整ガスＥの供給を停止し、同時に仕切り弁Ｖ１を開
いて、エッチングガスを反応室１へ送って、圧力ＰHBr
＝１０ｍＴｏｒｒおよびＰH2＝１０ｍＴｏｒｒとなり、
電極に１3.５６Ｈｚで３００Ｗの高周波電圧を印加して
プラズマを発生させ、半導体基板上のＳｉＯ2 膜をプラ
ズマエッチングする。Reaction chamber pressure P 2 by reaction pressure adjusting gas E
= 20 mTorr. Pressure P in the upper space of the upper compartment
1 = 100 mTorr consists of HBr etching gas pressure. The temperature of the semiconductor substrate is cooled to −60 ° C. The supply of the reaction pressure adjusting gas E is stopped, and at the same time, the gate valve V1 is opened, and the etching gas is sent to the reaction chamber 1, and the pressure P HBr
= 10 mTorr and P H2 = 10 mTorr,
A plasma is generated by applying a high-frequency voltage of 300 W at 13.56 Hz to the electrodes, and the SiO 2 film on the semiconductor substrate is plasma-etched.
【００２８】[0028]
【発明の効果】以上説明したように、本発明に係る半導
体装置製造用気相反応装置（ＣＶＤ装置、エッチング装
置）において、プロセスガスの反応室への導入を先に反
応圧力調整ガスに置き換えることに圧力変動を従来より
も大幅に小さく抑えることができ、プロセスガス導入時
点からほぼ均一に混合されているので、形成膜の組成お
よび厚さがより均一にできる。さらに、処理を繰り返し
た時の再現性も向上する。As described above, in the gas phase reaction apparatus (CVD apparatus, etching apparatus) for manufacturing a semiconductor device according to the present invention, the introduction of the process gas into the reaction chamber is first replaced with the reaction pressure adjusting gas. Therefore, the pressure fluctuation can be suppressed much smaller than before, and since the mixture is almost uniformly mixed from the point of introduction of the process gas, the composition and thickness of the formed film can be made more uniform. Further, the reproducibility when the processing is repeated is improved.
【図１】本発明に係る半導体装置製造用気相反応装置の
概略断面図。FIG. 1 is a schematic cross-sectional view of a gas phase reactor for manufacturing a semiconductor device according to the present invention.
【図２】図１の気相反応装置でのバルブの開閉を表すグ
ラフ。FIG. 2 is a graph showing opening and closing of a valve in the gas phase reactor of FIG.
１…反応室 ２…半導体基板 ３…支持台 ４…シャワー ７…上側区画室 ８…中間区画室 ９…下側区画室 １２…液体ソース １３、１４…供給管 １５…排気管 １６，１７、２０、２６、３２…マスフローコントロー
ラ ２２、２７…供給細管 ２５、３１…配管 ３３…開孔 Ａ…気化ないし希釈ガス Ｂ…第１反応ガス Ｄ…第２反応ガス Ｅ…反応圧力調整ガス Ｖ１…仕切り弁 Ｖ２、Ｖ３、Ｖ４、Ｖ５…バルブ Ｐ1 、Ｐ2 …圧力計DESCRIPTION OF SYMBOLS 1 ... Reaction chamber 2 ... Semiconductor substrate 3 ... Support base 4 ... Shower 7 ... Upper compartment 8 ... Intermediate compartment 9 ... Lower compartment 12 ... Liquid source 13, 14 ... Supply pipe 15 ... Exhaust pipe 16, 17, 20 , 26, 32: Mass flow controller 22, 27: Supply narrow tube 25, 31 ... Piping 33: Opening A: Vaporization or dilution gas B: First reaction gas D: Second reaction gas E: Reaction pressure adjusting gas V1: Gate valve V2, V3, V4, V5 ... valve P 1, P 2 ... pressure gauge
Claims (2)
半導体基板を担持している支持台と、前記反応室の上部
に設けられたプロセスガス供給具とを備えてなる半導体
装置製造用気相反応装置において、前記供給具が前記半
導体基板（２）とほぼ平行配置で前記半導体基板の上方
に位置するプロセスガスシャワー（４）であり、該プロ
セスガスシャワー（４）は気化ないし希釈用上側区画室
（７）と、反応圧力調整ガスの下側区画室（９）との少
なくとも２室からなり、該上側区画室から該下側区画室
の底面まで延びる多数の供給細管（２２）と該下側区画
室の底面の多数開孔（３３）とがシャワーガス噴出口で
あり、前記上側区画室はその内部に仕切り弁（Ｖ１）を
有し、該仕切り弁の上方にソース液体またはソースガス
の供給管（１３）と、気化または希釈用ガスの供給管
（１４）と、バルブ（Ｖ２）付き排気管（１５）とを備
え、前記下側区画室（９）は反応圧力調整ガス（Ｅ）を
供給するバルブ（Ｖ５）付き供給管（３１）を備えてい
ることを特徴とする半導体装置製造用気相反応装置。An apparatus for manufacturing a semiconductor device, comprising: a reaction chamber having an exhaust system; a support for supporting a semiconductor substrate in the reaction chamber; and a process gas supply tool provided above the reaction chamber. In the gas-phase reactor, the supply tool is a process gas shower (4) positioned above the semiconductor substrate in a substantially parallel arrangement with the semiconductor substrate (2), and the process gas shower (4) is used for vaporization or dilution. A plurality of supply tubes (22) comprising at least two chambers, an upper compartment (7) and a lower compartment (9) of the reaction pressure regulating gas, extending from the upper compartment to the bottom surface of the lower compartment; The multiple openings (33) on the bottom surface of the lower compartment are shower gas outlets, and the upper compartment has a gate valve (V1) therein, and a source liquid or a source is provided above the gate valve. Gas supply pipe (13) A supply pipe (14) for gas for vaporization or dilution, and an exhaust pipe (15) with a valve (V2), and the lower compartment (9) is provided with a valve (V5) for supplying a reaction pressure regulating gas (E). A gas-phase reactor for manufacturing a semiconductor device, comprising:
（９）との間に別のソースガス（Ｄ）の中間区画室
（８）が設けられ、該中間区画室から前記下側区画室の
底面まで延びる多数の供給細管（２７）があり、さら
に、前記上側区画室からの供給細管（２２）は該中間区
画室（８）を貫通していることを特徴とする請求項１記
載の気相反応装置。2. An intermediate compartment (8) for another source gas (D) is provided between the upper compartment (7) and the lower compartment (9). 2. A supply tube (27) extending to the bottom of the compartment, and further comprising a supply tube (22) from the upper compartment passing through the intermediate compartment (8). 3. A gas phase reactor as described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24138891A JP2650530B2 (en) | 1991-09-20 | 1991-09-20 | Gas phase reactor for semiconductor device manufacturing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24138891A JP2650530B2 (en) | 1991-09-20 | 1991-09-20 | Gas phase reactor for semiconductor device manufacturing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0582451A JPH0582451A (en) | 1993-04-02 |
| JP2650530B2 true JP2650530B2 (en) | 1997-09-03 |
Family
ID=17073548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24138891A Expired - Fee Related JP2650530B2 (en) | 1991-09-20 | 1991-09-20 | Gas phase reactor for semiconductor device manufacturing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2650530B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07161705A (en) * | 1993-12-03 | 1995-06-23 | Nec Corp | Method of forming interlayer insulating film of multilayered wiring of semiconductor device |
| JP3572211B2 (en) * | 1998-12-28 | 2004-09-29 | 京セラ株式会社 | Gas introduction nozzle for semiconductor manufacturing equipment |
| JP4399206B2 (en) * | 2003-08-06 | 2010-01-13 | 株式会社アルバック | Thin film manufacturing equipment |
| JP4887827B2 (en) * | 2006-02-20 | 2012-02-29 | 富士通セミコンダクター株式会社 | Method for forming ferroelectric capacitor and method for manufacturing semiconductor device |
| JP2009267111A (en) * | 2008-04-25 | 2009-11-12 | Tokyo Electron Ltd | Manufacturing method for semiconductor device, manufacturing apparatus, computer program, and computer-readable memory medium |
| JP6065762B2 (en) | 2013-06-21 | 2017-01-25 | 株式会社デンソー | Silicon carbide semiconductor film forming apparatus and film forming method using the same |
-
1991
- 1991-09-20 JP JP24138891A patent/JP2650530B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0582451A (en) | 1993-04-02 |
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