JP2646999B2 - Field emission cold cathode - Google Patents
Field emission cold cathodeInfo
- Publication number
- JP2646999B2 JP2646999B2 JP8858294A JP8858294A JP2646999B2 JP 2646999 B2 JP2646999 B2 JP 2646999B2 JP 8858294 A JP8858294 A JP 8858294A JP 8858294 A JP8858294 A JP 8858294A JP 2646999 B2 JP2646999 B2 JP 2646999B2
- Authority
- JP
- Japan
- Prior art keywords
- cold cathode
- field emission
- layer
- emission cold
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【０００１】[0001]
【産業上の利用分野】本発明は電子放出源となる冷陰
極、特に鋭利な先端から電子を放出する電界放出型冷陰
極に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cold cathode serving as an electron emission source, and more particularly to a field emission cold cathode emitting electrons from a sharp tip.
【０００２】[0002]
【従来の技術】ＬＳＩ製造技術を応用した微小構造を制
作するマイクロマシーニング技術により、スピント
（Ｃ．Ａ．Ｓｐｉｎｄｔ）らはシリコンウエハ上に電界
放出型冷陰極を制作している（ジャーナル・オブ・アプ
ライド・フィジックス（Ｊｏｕｒｎａｌ ｏｆ Ａｐｐ
ｌｉｅｄ Ｐｈｙｓｉｃｓ）第３９巻３５０４−３５０
５頁１９６８年）。2. Description of the Related Art CA Spindt et al. Produce a field emission type cold cathode on a silicon wafer by a micromachining technology for producing a microstructure by applying an LSI manufacturing technology (Journal of the United States).・ Applied Physics (Journal of App)
Lied Physics) Vol. 39, No. 3504-350
5 p. 1968).
【０００３】以下に、図６に示す従来の陰極製造工程と
構造の断面図を参照して従来の製造工程を簡単に述べ
る。The conventional manufacturing process will be briefly described below with reference to a conventional cathode manufacturing process and a sectional view of the structure shown in FIG.
【０００４】単結晶シリコンからなる基板１上に１μｍ
厚の絶縁層２およびモリブデンからなるゲート電極３が
形成されており、絶縁層２およびゲート電極３を貫通し
た直径約１．５μｍのキャビティ４を形成する（図６−
ａ）。On a substrate 1 made of single crystal silicon, 1 μm
A thick insulating layer 2 and a gate electrode 3 made of molybdenum are formed, and a cavity 4 having a diameter of about 1.5 μm penetrating the insulating layer 2 and the gate electrode 3 is formed (FIG. 6).
a).
【０００５】基板１の中心を貫通する基板１の法線を回
転軸とし、基板１を回転させながら前記法線から７０°
の方向よりアルミニウム（以下、Ａｌと記す。）からな
る犠牲層５を真空蒸着法を用いてゲート電極３および前
記穴の側面の一部上に形成する（図６−ｂ）。[0005] With the normal line of the substrate 1 passing through the center of the substrate 1 as a rotation axis, the substrate 1 is rotated by 70 ° from the normal line.
A sacrificial layer 5 made of aluminum (hereinafter, referred to as Al) is formed on the gate electrode 3 and a part of the side surface of the hole by using a vacuum deposition method from the direction (FIG. 6B).
【０００６】次に、基板１の中心を貫通する基板１の法
線を回転軸とし、基板１を回転させながら法線方向から
モリブデン（以下、Ｍｏと記す。）等の高融点金属を真
空蒸着法により犠牲層５上に蒸着形成する。Ｍｏにより
形成される高融点金属層６がゲート電極１上に積層され
るに従い、キャビティ４上に形成される高融点金属層６
の穴は穴側面にもＭｏが推積するために次第に小さくな
る。一方、高融点金属層６の穴を通過したＭｏはキャビ
ティ４底面に推積するが、高融点金属層６の穴が小さく
なるに従い推積する面積が小さくなる。高融点金属層６
の穴が完全に閉じるまでＭｏを推積すれば、キャビティ
４底面に形成される推積物（以下、エミッタコーン７と
称する。）は円錐形状となる（図６−ｃ）。Next, a high melting point metal such as molybdenum (hereinafter referred to as Mo) or the like is vacuum-deposited from the normal direction while rotating the substrate 1 with the normal line of the substrate 1 passing through the center of the substrate 1 as a rotation axis. It is formed on the sacrificial layer 5 by vapor deposition. As the refractory metal layer 6 formed of Mo is laminated on the gate electrode 1, the refractory metal layer 6 formed on the cavity 4 is formed.
The hole becomes gradually smaller because Mo is deposited on the side surface of the hole. On the other hand, Mo that has passed through the hole of the high melting point metal layer 6 is deposited on the bottom surface of the cavity 4, but the smaller the hole of the high melting point metal layer 6, the smaller the area to be deposited. Refractory metal layer 6
If Mo is deposited until the hole is completely closed, the deposit formed on the bottom surface of the cavity 4 (hereinafter referred to as the emitter cone 7) has a conical shape (FIG. 6C).
【０００７】高融点金属層６を形成後、リン酸等の弱酸
に浸し、犠牲層５を溶解すればリフトオフ法により高融
点金属層６も除去する事が出来、微小電界放出型冷陰極
を得る（図６−ｄ）。After forming the high-melting-point metal layer 6, the high-melting-point metal layer 6 is immersed in a weak acid such as phosphoric acid and the sacrifice layer 5 is dissolved. (FIG. 6-d).
【０００８】基板１とゲート電極３間にゲート電極３が
正の電位となるように数１０〜２００Ｖの電圧を印加す
る事により、エミッタコーン７の先端には１０7 Ｖ／ｃ
ｍ以上の電界が発生しエミッタコーン７の先端から電子
が放出される。By applying a voltage of several tens to 200 V between the substrate 1 and the gate electrode 3 so that the gate electrode 3 has a positive potential, a voltage of 10 7 V / c is applied to the tip of the emitter cone 7.
An electric field of m or more is generated, and electrons are emitted from the tip of the emitter cone 7.
【０００９】現在、１エミッタコーンあたり１００μＡ
以上の放出電流が観測されており、様々な応用案が提案
されている。At present, 100 μA per emitter cone
The above emission current has been observed, and various application plans have been proposed.
【００１０】例えば、この素子を電子源とした微小な三
極管によるスイッチング素子試作の試みや、マトリック
ス状に多数の素子を並べてなる平板のエミッション源に
より蛍光体を発光させるディスプレイパネル制作の試み
がなされている。For example, an attempt has been made to produce a switching element as a prototype using a micro triode using this element as an electron source, and to produce a display panel in which a phosphor is emitted by a flat emission source in which a large number of elements are arranged in a matrix. I have.
【００１１】また特開昭４８−９０４６７号公報におい
ては従来の熱陰極の代わりに１個もしくはマトリックス
状に複数の電界放出型冷陰極を並べてなるエミッション
源を用いたカラー受像管が開示されている。Japanese Patent Application Laid-Open No. 48-90467 discloses a color picture tube using an emission source in which a plurality of field emission cold cathodes are arranged in a matrix or in place of a conventional hot cathode. .
【００１２】[0012]
【発明が解決しようとする課題】上述した電界放出型冷
陰極の製造工程において、弱酸による犠牲層５を溶解す
るリフトオフ法では、犠牲層５上に弱酸では溶解しない
Ｍｏ層６があるため、横方向外周から順次溶解するサイ
ドエッチングによらなければならない。故に、この工程
は長時間を要するという欠点を有する。In the above-described manufacturing process of the field emission type cold cathode, in the lift-off method of dissolving the sacrificial layer 5 with a weak acid, since the Mo layer 6 which is not dissolved by the weak acid is present on the sacrificial layer 5, It must be based on side etching which dissolves sequentially from the outer periphery in the direction. Therefore, this process has the disadvantage of requiring a long time.
【００１３】また、犠牲層５が溶解された高融点金属層
６は内部の歪により湾曲しながら基板１より解離する。
ある程度解離した高融点金属層６の一部は任意の形状に
割れて基板１からリフトオフされる。故に、完全に高融
点金属層６がリフトオフされたことを確認することが難
しく、多くの場合、数μｍサイズの高融点金属層６の残
渣がゲート電極３上に残るという欠点を有する。The refractory metal layer 6 in which the sacrificial layer 5 is dissolved is dissociated from the substrate 1 while being curved by internal strain.
A part of the refractory metal layer 6 dissociated to some extent is broken into an arbitrary shape and lifted off the substrate 1. Therefore, it is difficult to confirm that the refractory metal layer 6 has been completely lifted off, and in many cases, there is a disadvantage that a residue of the refractory metal layer 6 having a size of several μm remains on the gate electrode 3.
【００１４】さらに、長時間の弱酸の浸せきにより、エ
ミッタコーン７の表面に酸化層が形成されるという欠点
を有する。この酸化層はエミッタコーン７先端の仕事関
数を増大させ、電界放出型冷陰極の電子放出特性を悪化
させる原因となる。Further, there is a disadvantage that an oxidized layer is formed on the surface of the emitter cone 7 due to long-time immersion of the weak acid. This oxide layer increases the work function of the tip of the emitter cone 7 and causes deterioration of the electron emission characteristics of the field emission cold cathode.
【００１５】[0015]
【課題を解決するための手段】本発明の電界放出型冷陰
極は、基板１上のゲート電極３の外周部に島状または帯
状の凸部パターン８を有し、凸部パターン８間およびゲ
ート電極３・凸部パターン８間に有する絶縁層２が露出
し、絶縁層２の外周には基板１が露出している。The field emission cold cathode according to the present invention has an island-shaped or band-shaped convex pattern 8 on the outer periphery of the gate electrode 3 on the substrate 1, and the space between the convex patterns 8 and the gate. The insulating layer 2 provided between the electrode 3 and the convex pattern 8 is exposed, and the substrate 1 is exposed on the outer periphery of the insulating layer 2.
【００１６】凸部パターン上面は、引き出し電極に接続
されエミッタコーンと同電位が印加される。The upper surface of the convex pattern is connected to the extraction electrode, and is applied with the same potential as the emitter cone.
【００１７】[0017]
【作用】本発明において提案する凸部パターンにより、
陰極全面に起伏が形成される。基板と高融点金属層の熱
膨張係数の差により、この起伏の周辺上に推積された高
融点金属層に微小な割れ目が生じる。よって犠牲層エッ
チングを容易にかつ短時間に行うことができるととも
に、高融点金属層は制御された形状で剥離することがで
きるため、完全に高融点金属層を除去することができ
る。According to the convex pattern proposed in the present invention,
Undulation is formed on the entire surface of the cathode. Due to the difference in the coefficient of thermal expansion between the substrate and the refractory metal layer, fine cracks are formed in the refractory metal layer deposited on the periphery of the undulation. Therefore, the sacrificial layer etching can be performed easily and in a short time, and the refractory metal layer can be peeled off in a controlled shape, so that the refractory metal layer can be completely removed.
【００１８】[0018]
【実施例】以下に、本発明の電界放出型冷陰極の実施例
を図面を参照して説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the field emission cold cathode of the present invention will be described below with reference to the drawings.
【００１９】図１は本発明の第一の実施例である電界放
出型冷陰極の断面を含む外観図である。図２は本発明の
第一の実施例である電界放出型冷陰極の平面図である。FIG. 1 is an external view including a cross section of a field emission cold cathode according to a first embodiment of the present invention. FIG. 2 is a plan view of a field emission cold cathode according to a first embodiment of the present invention.
【００２０】また、図３は本発明の第一の実施例である
電界放出型冷陰極の制作工程の１つである犠牲層エッチ
ングによる高融点金属層のリフトオフ工程途中の断面図
である。FIG. 3 is a cross-sectional view of a field-emission cold cathode according to a first embodiment of the present invention, which is in the process of lift-off of a refractory metal layer by sacrificial layer etching, which is one of the manufacturing steps.
【００２１】約０．７ｍｍの単結晶シリコンＳｉ基板１
上には、酸化シリコンＳｉＯ2 を熱酸化法で約０．５μ
ｍ厚に積層した絶縁層２を有し、さらに絶縁層２の上に
タングステンシリサイドＷＳｉ層をスパッタ法で０．２
μｍ厚に積層した後、フォトリソグラフィとドライエッ
チング法により余分な絶縁層２とタングステンシリサイ
ドＷＳｉ層からなり島状もしくは帯状もしくは櫛歯上の
凸部パターン８を有している。犠牲層５としてはキャビ
ティ４の底面に犠牲層が形成されないように基板１の法
線に対し斜め方向より、アルミニウムＡｌを真空蒸着法
により０．１μｍ厚に積層することにより形成してい
る。高融点金属層６としては基板１の法線方向よりモリ
ブデンＭｏを真空蒸着法により犠牲層５上に約１．５μ
ｍ積層することにより形成している。高融点金属層６の
形成時、キャビティ４上の高融点金属層６の穴は積層す
るにしたがって小さくなるため、キャビティ４内にはモ
リブデンＭｏからなる円錐形のエミッタコーン７が形成
される。A single crystal silicon Si substrate 1 of about 0.7 mm
On top of this, silicon oxide SiO2 was deposited by thermal oxidation to about 0.5μ.
an insulating layer 2 laminated to a thickness of m, and a tungsten silicide WSi layer is further formed on the insulating layer 2 by sputtering.
After laminating to a thickness of μm, an extra insulating layer 2 and a tungsten silicide WSi layer are formed by photolithography and dry etching, and have an island-shaped, strip-shaped or comb-shaped convex pattern 8. The sacrificial layer 5 is formed by laminating aluminum Al to a thickness of 0.1 μm by a vacuum deposition method from a direction oblique to the normal line of the substrate 1 so that no sacrificial layer is formed on the bottom surface of the cavity 4. As the high melting point metal layer 6, molybdenum Mo is deposited on the sacrificial layer 5 by about 1.5 μm from the normal direction of the substrate 1 by a vacuum evaporation method.
It is formed by stacking m layers. When the refractory metal layer 6 is formed, the hole of the refractory metal layer 6 on the cavity 4 becomes smaller as the layers are laminated, so that a conical emitter cone 7 made of molybdenum Mo is formed in the cavity 4.
【００２２】真空蒸着法による高融点金属層６の形成時
は、Ｍｏソースからの熱輻射により電界放出型冷陰極全
体が約２００℃まで加熱される。高融点金属層６の形成
後、室温まで冷却されると高融点金属と基板１の材質で
あるシリコンの熱膨張係数差により、ゲート電極３およ
び凸部パターン８のエッジ部分に微小な割れが生じる。When the refractory metal layer 6 is formed by the vacuum evaporation method, the entire field emission cold cathode is heated to about 200 ° C. by heat radiation from a Mo source. When the refractory metal layer 6 is formed and cooled down to room temperature, minute cracks occur at the edge portions of the gate electrode 3 and the convex pattern 8 due to a difference in thermal expansion coefficient between the refractory metal and silicon as a material of the substrate 1. .
【００２３】高融点金属層６のリフトオフ工程におい
て、例えばリン酸等の弱酸中に工程途中品を浸せきした
時、上述の微小な割れを通りＡｌからなる犠牲層５まで
上記弱酸が到達し犠牲層５を溶解する。犠牲層５が溶解
された部分の高融点金属層６は、高融点金属層内の内部
歪によりゲート電極３から離れる方向に湾曲し、且つ凸
部パターンに沿った形状で長手方向に順次剥離される。
このため、剥離されるＭｏ層６の形状及び大きさが制御
できるため、リフトオフ工程を均一に且つ短時間に、残
渣を残すことなく完全に行うことができる。発明者の実
験によれば、隣接した凸部パターン８間の間隔は５μｍ
未満である場合、凸部パターン８間に形成される凹部上
の高融点金属層６はリフトオフにしにくいので隣接した
凸部パターン８間隔は５μｍ以上である必要があり望ま
しくは１０μｍ以上とするとよいことがわかった。また
上限は５００μｍ程度まで許容できる。５０〜１００μ
ｍとしたときに良好な結果を得られた。本発明によりリ
フトオフ工程に要する時間は、ゲート電極３および凸部
パターン８の寸法によるが、少なくとも従来に比べ１／
４に短縮する事ができた。In the lift-off step of the refractory metal layer 6, when the product is immersed in a weak acid such as phosphoric acid during the process, the weak acid reaches the sacrificial layer 5 made of Al through the above-mentioned minute cracks and the sacrificial layer. Dissolve 5 The refractory metal layer 6 in the portion where the sacrificial layer 5 is dissolved is curved in a direction away from the gate electrode 3 due to internal strain in the refractory metal layer, and is sequentially peeled in the longitudinal direction in a shape along the convex pattern. You.
For this reason, since the shape and size of the Mo layer 6 to be peeled can be controlled, the lift-off step can be performed uniformly and in a short time without leaving any residue. According to the experiment of the inventor, the interval between the adjacent convex patterns 8 is 5 μm.
If it is less than the height, the high melting point metal layer 6 on the concave portion formed between the convex pattern 8 is difficult to lift off, so it is adjacent.
It has been found that the interval between the protrusion patterns 8 needs to be 5 μm or more, and desirably 10 μm or more. Further, the upper limit is allowable up to about 500 μm. 50-100μ
When m was set, a good result was obtained. The time required for the lift-off process according to the present invention depends on the dimensions of the gate electrode 3 and the convex pattern 8, but is at least 1 /
I was able to shorten it to 4.
【００２４】図４は本発明の第２の実施例である電界放
出型冷陰極の断面を含む外観図である。本実施例の構造
は、ゲート電極３及び凸部パターン８の外周部上面に絶
縁層２が露出している点が本発明の第１の実施例と異な
る。FIG. 4 is an external view including a cross section of a field emission cold cathode according to a second embodiment of the present invention. The structure of this embodiment is different from the first embodiment of the present invention in that the insulating layer 2 is exposed on the upper surface of the outer peripheral portion of the gate electrode 3 and the convex pattern 8.
【００２５】本実施例の構造はレジストによるパターニ
ングおよびエッチングを２回行えば実現可能である。The structure of this embodiment can be realized by performing patterning and etching with a resist twice.
【００２６】凸部パターン８上の導電層はゲート電極３
の形成時に同時に形成されたものだがゲート電極３およ
び基板１と絶縁されている。電界放出型冷陰極を動作さ
せた場合、この導電層はチャージアップし導電層・基板
１間で放電が発生し、真空度を劣化させる場合がある。
しかし、本実施例の構造では上記導電層と基板１間の距
離を十分にとることが可能となり、放電を防止すること
ができる。The conductive layer on the convex pattern 8 is the gate electrode 3
Is formed at the same time as the formation, but is insulated from the gate electrode 3 and the substrate 1. When the field emission type cold cathode is operated, the conductive layer is charged up, and a discharge is generated between the conductive layer and the substrate 1, which may deteriorate the degree of vacuum.
However, in the structure of this embodiment, the distance between the conductive layer and the substrate 1 can be sufficiently increased, and discharge can be prevented.
【００２７】エミッタ材料としてはモリブデンＭｏの他
にタングステンＷ，シリコンＳｉ，白金Ｐｔ，タンタル
Ｔａなどの高融点材料やこの化合物が使用でき、ゲート
材料としてはタンタグステンシリサイドＷＳｉの他にモ
リブデンＭｏ，タングステンＷなどの材料やこの化合物
が使用できる。基板としてはシリコンＳｉの他に金属あ
るいは絶縁体の上に導電材を積層したものが使用でき
る。As the emitter material, in addition to molybdenum Mo, a high melting point material such as tungsten W, silicon Si, platinum Pt, and tantalum Ta or this compound can be used. As the gate material, in addition to molybdenum Mo, Materials such as tungsten W and this compound can be used. A substrate obtained by laminating a conductive material on a metal or an insulator other than silicon Si can be used as the substrate.
【００２８】図５は本発明の第３の実施例である電界放
出型冷陰極の外観図である。凸部パターン８上の導電層
はエミッタコーン７と導電位となり、凸部パターン８上
の導電層と基板１間の放電を防止することができる。
尚、図５において本発明の電界放出型冷陰極および外部
電極９を保持する陰極構体は一部のみ図示している。FIG. 5 is an external view of a field emission cold cathode according to a third embodiment of the present invention. The conductive layer on the convex pattern 8 is in a conductive position with the emitter cone 7, so that discharge between the conductive layer on the convex pattern 8 and the substrate 1 can be prevented.
In FIG. 5, only a part of the field emission type cold cathode of the present invention and the cathode structure holding the external electrode 9 are shown.
【００２９】[0029]
【発明の効果】以上説明した通り、本発明によるところ
の電界放出型冷陰極では、リフトオフ法による高融点金
属層除去工程が短時間に且つ残渣を残さず確実に行うこ
とができる。As described above, in the field emission type cold cathode according to the present invention, the step of removing the refractory metal layer by the lift-off method can be performed reliably in a short time without leaving any residue.
【図１】本発明の第１の実施例である電界放出型冷陰極
の断面を含む外観を示す斜視図。FIG. 1 is a perspective view showing an appearance including a cross section of a field emission cold cathode according to a first embodiment of the present invention.
【図２】本発明の第１の実施例である電界放出型冷陰極
の平面図。FIG. 2 is a plan view of a field emission cold cathode according to the first embodiment of the present invention.
【図３】本発明の電界放出型冷陰極の制作工程の一部で
あるリフトオフ工程途中を示す断面図。FIG. 3 is a cross-sectional view showing a lift-off process which is a part of a production process of the field emission cold cathode of the present invention.
【図４】本発明の第２の実施例である電界放出型冷陰極
の断面を含む外観を示す斜視図。FIG. 4 is a perspective view showing an appearance including a cross section of a field emission cold cathode according to a second embodiment of the present invention.
【図５】本発明の第３の実施例である電界放出型冷陰極
の外観を示す斜視図。FIG. 5 is a perspective view showing the appearance of a field emission cold cathode according to a third embodiment of the present invention.
【図６】従来の電界放出型冷陰極の製造工程と構造の断
面図。FIG. 6 is a cross-sectional view of a manufacturing process and a structure of a conventional field emission cold cathode.
１ 基板 ２ 絶縁層 ３ ゲート電極 ４ キャビティ ５ 犠牲層 ６ 高融点金属層 ７ エミッタコーン ８ 凸部パターン ９ 外部電極 １０ ボンディングワイヤ １１ レジスト １２ ガラス基板 DESCRIPTION OF SYMBOLS 1 Substrate 2 Insulating layer 3 Gate electrode 4 Cavity 5 Sacrificial layer 6 Refractory metal layer 7 Emitter cone 8 Convex pattern 9 External electrode 10 Bonding wire 11 Resist 12 Glass substrate
Claims (4)
絶縁体からなる基板上に１つもしくは複数の先端の尖っ
たエミッタコーンと前記エミッタコーンの先端を取り囲
む開口部を有するゲート電極と前記基板と前記ゲート電
極間に絶縁層を有する電界放出冷陰極において、前記基
板上の電界放出冷陰極のパターンが形成されない外周部
に島状または帯状または櫛歯状の凸部パターンを有し、
かつ前記凸部パターンは凸部状絶縁層と前記凸部状絶縁
層上に形成された導電層とで構成されていることを特徴
とする電界放出型冷陰極。1. A substrate comprising a conductor or an insulator having a conductive layer on a surface, a gate electrode having one or more sharpened emitter cones, an opening surrounding the emitter cones, and the substrate. the field emission cold cathode having an insulating layer between the gate electrode, have a island or band or comb-shaped protrusion patterns on the outer periphery of the field emission cold cathode of the pattern on the substrate is not formed and,
In addition, the convex pattern has a convex insulating layer and the convex insulating layer.
A field emission cold cathode comprising: a conductive layer formed on a layer .
電層は前記ゲート電極と同じ材質の導電層からなること
を特徴とする請求項１記載の電界放出型冷陰極。2. The conductive layer formed on the convex insulating layer.
2. The field emission cold cathode according to claim 1, wherein the electric layer is formed of a conductive layer made of the same material as the gate electrode.
電層は引き出し電極に接続され前記コーンと同電位が印
加されることを特徴とする請求項２記載の電界放出型冷
陰極。3. The conductive layer formed on the convex insulating layer.
3. The field emission cold cathode according to claim 2, wherein the electric layer is connected to the extraction electrode and is applied with the same potential as the cone.
極・前記凸部パターン間距離が５μｍ以上５００μｍ以
下であることを特徴とする請求項１記載の電界放出型冷
陰極。4. The field emission cold cathode according to claim 1, wherein the distance between the convex patterns and the distance between the gate electrode and the convex pattern are 5 μm or more and 500 μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8858294A JP2646999B2 (en) | 1994-04-26 | 1994-04-26 | Field emission cold cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8858294A JP2646999B2 (en) | 1994-04-26 | 1994-04-26 | Field emission cold cathode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07296717A JPH07296717A (en) | 1995-11-10 |
| JP2646999B2 true JP2646999B2 (en) | 1997-08-27 |
Family
ID=13946845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8858294A Expired - Lifetime JP2646999B2 (en) | 1994-04-26 | 1994-04-26 | Field emission cold cathode |
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| Country | Link |
|---|---|
| JP (1) | JP2646999B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3079987B2 (en) * | 1996-02-28 | 2000-08-21 | 日本電気株式会社 | Field emission electron source and method of manufacturing the same |
| JP3127844B2 (en) * | 1996-11-22 | 2001-01-29 | 日本電気株式会社 | Field emission cold cathode |
| US7521705B2 (en) * | 2005-08-15 | 2009-04-21 | Micron Technology, Inc. | Reproducible resistance variable insulating memory devices having a shaped bottom electrode |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2607251B2 (en) * | 1987-08-26 | 1997-05-07 | 松下電工株式会社 | Field emission cathode |
| JP2630985B2 (en) * | 1988-05-10 | 1997-07-16 | キヤノン株式会社 | Electron beam generator |
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1994
- 1994-04-26 JP JP8858294A patent/JP2646999B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07296717A (en) | 1995-11-10 |
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