JP2629447B2 - Chemical coating device - Google Patents
Chemical coating deviceInfo
- Publication number
- JP2629447B2 JP2629447B2 JP31522690A JP31522690A JP2629447B2 JP 2629447 B2 JP2629447 B2 JP 2629447B2 JP 31522690 A JP31522690 A JP 31522690A JP 31522690 A JP31522690 A JP 31522690A JP 2629447 B2 JP2629447 B2 JP 2629447B2
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- Prior art keywords
- exhaust
- valve
- chemical liquid
- wind speed
- flow rate
- Prior art date
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体製造における半導体製造装置に関
し、特に薬液塗布装置に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus in semiconductor manufacturing, and more particularly to a chemical liquid applying apparatus.
従来の薬液塗布装置は第３図に示すように、塗布処理
部１内において、真空チャック２に吸着固定した半導体
基板３に、薬液ノズル４より滴下した薬液4aが回転しな
がら塗布される。As shown in FIG. 3, in a conventional chemical liquid applying apparatus, a chemical liquid 4a dropped from a chemical liquid nozzle 4 is applied to a semiconductor substrate 3 sucked and fixed to a vacuum chuck 2 in a coating processing section 1 while rotating.
塗布処理部１の下部には、薬液廃液口７と処理部内の
薬液雰囲気を排気する排気口５とがある。排気口５の下
部のミストトラップ６は薬液の飛沫が排気配管８に侵入
し、配管をつまらせるのを防止するもので、一般に金属
網等を用いる。A chemical liquid waste liquid port 7 and an exhaust port 5 for exhausting a chemical liquid atmosphere in the processing section are provided below the coating processing section 1. The mist trap 6 below the exhaust port 5 prevents the splash of the chemical solution from entering the exhaust pipe 8 and clogging the pipe, and generally uses a metal net or the like.
塗布処理部内の排気は薬液雰囲気の除去だけでなく、
回転塗布における塗布処理部内での薬液のはねかえりを
抑制する上で不可欠であり、排気流量が適正量より少な
すぎると、はねかえりによる半導体基板３の汚染が起こ
ることが知られている。逆に排気流量が適正量より多過
ぎると、塗布膜厚の均一性が悪化することが知られてい
る。従って、均一な膜厚で、しかも薬液のはねかえりに
よる汚染のない塗布を行うには、適正な排気流量を一定
に保つ必要がある。Exhaust in the coating section not only removes the chemical solution atmosphere,
It is indispensable to suppress the splashing of the chemical solution in the coating processing section in the spin coating, and it is known that if the exhaust flow rate is too small, the semiconductor substrate 3 is contaminated by the splashing. Conversely, it is known that if the exhaust gas flow rate is too large, the uniformity of the coating film thickness deteriorates. Therefore, in order to perform coating with a uniform film thickness and without contamination due to splashing of a chemical solution, it is necessary to keep an appropriate exhaust flow rate constant.
第３図に示すように、排気配管８に取付けられた定流
量制御弁９、排気配管８内に取付けた排気風速センサ10
でフィードバック制御される。即ち、定流量制御弁９は
排気風速が増加すると、弁が閉まる方向に、また排気風
速が減少すると弁が開く方向に動き、排気風速は常に一
定となるよう制御され、従って排気流量も一定となる。As shown in FIG. 3, a constant flow control valve 9 attached to the exhaust pipe 8 and an exhaust wind speed sensor 10 attached inside the exhaust pipe 8.
Is feedback controlled. That is, the constant flow control valve 9 moves in a direction in which the valve closes when the exhaust wind speed increases, and in a direction in which the valve opens when the exhaust wind speed decreases, so that the exhaust wind speed is controlled to be always constant. Become.
以上は一般的に用いられる排気流量一定化の手法であ
るが、逆に何故このような手法を用いなければならない
かというと、塗布処理部の排気風量が後述する２つの理
由により、変動するからである。すなわち、 第１の理由は塗布薬液の飛沫が排気配管に侵入し、排
気配管をつまらせるためである。通常、前述したような
薬液ミストトラップを用いて、薬液飛沫の侵入を防いで
いるが、このミストトラップの網目も薬液飛沫によって
つまるため、半導体基板の塗布処理の量に比例して塗布
処理部の排気流量は低下してくる。従って、このミスト
トラップは定期的に交換する必要がある。The above is a method of stabilizing the exhaust flow rate which is generally used. Conversely, why such a method must be used is because the exhaust air volume of the coating processing unit varies for two reasons to be described later. It is. That is, the first reason is that the droplets of the coating solution enter the exhaust pipe and clog the exhaust pipe. Usually, a chemical liquid mist trap as described above is used to prevent chemical liquid droplets from entering, but since the mesh of the mist trap is also clogged with the chemical liquid droplets, the coating processing section is formed in proportion to the amount of the semiconductor substrate coating processing. The exhaust flow rate decreases. Therefore, this mist trap needs to be replaced periodically.
第２の理由は、工場排気圧の変動である。一般的に塗
布処理部の排気配管は工場排気に接続されている。通
常、この工場排気ラインは様々な整備が共有しているた
め、他の設備の排気の使用量により、排気圧が変動して
しまい、従って、排気流量も変動する。The second reason is the fluctuation of the factory exhaust pressure. Generally, the exhaust pipe of the coating processing section is connected to factory exhaust. Usually, since various maintenances are shared by the factory exhaust line, the exhaust pressure fluctuates depending on the amount of exhaust gas used by other facilities, and therefore the exhaust flow rate also fluctuates.
上述した従来の排気風量制御では、排気風速センサの
薬液飛沫による汚染のため、制御排気風量が変動すると
いう問題があった。In the above-described conventional exhaust air volume control, there is a problem that the controlled exhaust air volume fluctuates due to contamination of the exhaust air speed sensor by the splash of the chemical liquid.
薬液飛沫は薬液ミストトラップにて大部分捕捉される
が、一部は排気配管に侵入し、排気風速センサに付着す
る。Most of the chemical liquid droplets are captured by the chemical liquid mist trap, but part of the chemical liquid droplets enter the exhaust pipe and adhere to the exhaust air velocity sensor.
この排気風速センサは、一般的に熱式センサであり、
センサ表面に異物が付着すると、センサの感度が低下
し、真の排気風速より低目に検知してしまう。従って、
この状態では定流量制御弁は開く方向に制御されるた
め、真の制御排気流量が多くなってしまう。つまり、塗
布処理を続けている内に、制御排気流量が適正値より徐
々に多くなっていくという現象である。This exhaust wind speed sensor is generally a thermal sensor,
If a foreign substance adheres to the sensor surface, the sensitivity of the sensor decreases, and the sensor detects a lower speed than the true exhaust air velocity. Therefore,
In this state, since the constant flow control valve is controlled to open, the true control exhaust flow rate increases. In other words, this is a phenomenon that the control exhaust gas flow rate gradually increases from an appropriate value while the coating process is continued.
この現象により、半導体基板表面の薬液塗布膜厚の均
一性が悪化する。Due to this phenomenon, the uniformity of the thickness of the chemical solution applied on the surface of the semiconductor substrate is deteriorated.
例えば、フォトレジストを例にとると、現状の技術で
は、１μｍ程度の膜厚で、半導体基板上の任意の測定点
における膜厚ばらつきは30Å以内といわれている。For example, taking a photoresist as an example, in the current technology, it is said that a film thickness of about 1 μm and a film thickness variation at an arbitrary measurement point on a semiconductor substrate is within 30 °.
程度にもよるが、上述した現象により、塗布処理部の
排気流量が適正量より多くなると、膜厚ばらつきは通常
の２倍以上、つまり60Å以上となる可能性が充分にあ
る。Although it depends on the degree, if the exhaust flow rate in the coating processing section becomes larger than the appropriate amount due to the above-mentioned phenomenon, there is a good possibility that the film thickness variation becomes twice or more of the normal, that is, 60 ° or more.
従来の技術では、この排気流量の増加を補正すること
ができず、排気風速センサの定期的な洗浄に頼らざるを
得なかった。しかも、薬液塗布膜厚の均一性の悪化に対
する危険度のマージンを見て、かなり頻繁に洗浄を行わ
なければならなかった。In the related art, the increase in the exhaust gas flow rate cannot be corrected, and the exhaust gas velocity sensor must be regularly cleaned. In addition, the cleaning must be performed quite frequently in view of the margin of risk for the deterioration of the uniformity of the film thickness of the applied chemical solution.
本発明の目的は、塗布処理部の排気流量を一定に保つ
ことができる薬液塗布装置を提供することにある。An object of the present invention is to provide a chemical liquid application device capable of maintaining a constant exhaust flow rate of an application processing unit.
前記目的を達成するため、本発明に係る薬液塗布装置
は、薬液塗布処理部の排気風速をフィードバック制御す
る排気風速センサと、排気風速センサの感度を補正する
ための排気配管系統とを有するものである。In order to achieve the above object, a chemical liquid application device according to the present invention includes an exhaust air velocity sensor that feedback-controls an exhaust air velocity of a chemical liquid application processing unit, and an exhaust pipe system for correcting sensitivity of the exhaust air velocity sensor. is there.
排気風速センサの感度を補正し、適正な排気流量を得
るものである。This is to correct the sensitivity of the exhaust wind speed sensor to obtain an appropriate exhaust flow rate.
以下、本発明の実施例を図により説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
（実施例１） 第１図は、本発明の実施例１を示す構成図である。First Embodiment FIG. 1 is a configuration diagram showing a first embodiment of the present invention.
図において、１は塗布処理部、２は真空チャック、４
は薬液ノズル、５は排気口、６はミストトラップ、７は
薬液廃液口、８は排気配管、９は定流量制御弁、10は排
気風速センサであり、この構成は従来のものと同じであ
る。In the figure, 1 is a coating processing unit, 2 is a vacuum chuck, 4
Is a chemical nozzle, 5 is an exhaust port, 6 is a mist trap, 7 is a chemical liquid waste port, 8 is an exhaust pipe, 9 is a constant flow control valve, and 10 is an exhaust wind speed sensor, and this configuration is the same as the conventional one. .
本発明は、塗布処理部１の排気配管８に、定流量排気
発生器11と、定流量排気配管12及び外気吸入配管13と、
弁14,15,16,17とを備えていることに特徴がある。In the present invention, a constant flow exhaust generator 11, a constant flow exhaust pipe 12, and an outside air suction pipe 13,
It is characterized by having valves 14, 15, 16, 17.
通常の薬液塗布処理時は、第１の弁14と第２の弁15を
開とし、第３の弁16と第４の弁17を閉とする。At the time of normal chemical solution application processing, the first valve 14 and the second valve 15 are opened, and the third valve 16 and the fourth valve 17 are closed.
この状態は従来の技術における塗布処理部１の排気動
作と同一である。このまま半導体基板３の塗布処理を続
けていくと、基板３の処理枚数が増えるにつれて、ミス
トトラップ６の網目が目づまりし、そのままでは排気流
量が低下してくる。これを排気風速センサ10が検知し、
定流量制御弁９を開く方向に動かして、排気流量を一定
とす。This state is the same as the exhaust operation of the coating processing unit 1 in the conventional technique. If the coating process of the semiconductor substrate 3 is continued as it is, the mesh of the mist trap 6 becomes clogged as the number of processed substrates 3 increases, and the exhaust flow rate decreases as it is. This is detected by the exhaust wind speed sensor 10,
The constant flow control valve 9 is moved in the opening direction to keep the exhaust flow rate constant.
半導体基板３の処理枚数をさらに増やしていくと、前
述したように排気風速センサ10の表面に薬液4aの飛沫が
付着し、センサの感度が低下する。When the number of processed semiconductor substrates 3 is further increased, the droplets of the chemical solution 4a adhere to the surface of the exhaust air velocity sensor 10 as described above, and the sensitivity of the sensor decreases.
従来の技術ではこの排気流量の増加を補正することが
できず、排気風速センサの定期的な洗浄に頼らざるを得
なかった。In the prior art, the increase in the exhaust gas flow rate cannot be corrected, and the exhaust air velocity sensor must be regularly cleaned.
本発明では、この排気風速センサ10の感度補正を行
い、適正な排気流量を得るため、次のような動作を行
う。すなわち、 先ず、半導体基板３の薬液塗布処理を行う前に以下の
準備をする。排気風速センサ10に薬液4aの飛沫が付着し
ていない正常な状態で、第１の弁14と第２の弁15を閉と
し、第３の弁16と第４の弁17を開にする。ここで、例え
ば空気圧駆動のコンバム等の定流量排気発生器11を動作
させ、ある一定圧の負荷を発生させると、外気吸入配管
13から定流量排気配管12に向かって、ある一定流量の排
気が行われる。このときの排気風速を塗布処理時に必要
とする適正排気流量に対応した風速値に合せ込んでお
く。ここでは、仮にこの風速値をＡとしておく。合せ込
みの方法は、定流量排気発生器11の排気流量の調整によ
る。In the present invention, the following operation is performed to correct the sensitivity of the exhaust wind speed sensor 10 and obtain an appropriate exhaust flow rate. That is, first, the following preparations are made before performing the chemical solution coating process on the semiconductor substrate 3. The first valve 14 and the second valve 15 are closed, and the third valve 16 and the fourth valve 17 are opened in a normal state in which the chemical liquid 4a does not adhere to the exhaust air velocity sensor 10. Here, for example, when the constant flow exhaust generator 11 such as a pneumatically driven convertor is operated to generate a load of a certain pressure, the outside air suction pipe
A constant flow rate is exhausted from 13 toward the constant flow rate exhaust pipe 12. The exhaust wind speed at this time is adjusted to a wind speed value corresponding to an appropriate exhaust flow rate required during the coating process. Here, this wind speed value is temporarily set to A. The adjustment method is based on the adjustment of the exhaust flow rate of the constant flow exhaust generator 11.
次に、通常の塗布処理を開始した場合の動作を説明す
る。先ず、半導体基板の塗布処理を行う前に前記と同様
に第１の弁14と第２の弁15を閉とし、第３の弁16と第４
の弁17を開いて定流量排気発生器11を動作させ、排気風
速を測定する。この風速値を仮にＢとする。ここで、前
述の風速値Ａと風速値Ｂを比較し、Ｂ＝Ａとなるよう
に、補正回路10aで排気風速センサ10の感度を自動的に
調整する。次に第１の弁14と第２の弁15を開とし、第３
の弁16と第４の弁17を閉にして塗布処理を行う。処理が
終了すると、また前述の動作を繰り返す。Next, an operation when a normal coating process is started will be described. First, the first valve 14 and the second valve 15 are closed, and the third valve 16 and the fourth
Is opened to operate the constant flow exhaust generator 11 to measure the exhaust wind speed. This wind speed value is assumed to be B. Here, the wind speed A and the wind speed B are compared, and the sensitivity of the exhaust wind speed sensor 10 is automatically adjusted by the correction circuit 10a so that B = A. Next, the first valve 14 and the second valve 15 are opened, and the third valve
The valve 16 and the fourth valve 17 are closed to perform the coating process. When the processing is completed, the above operation is repeated.
初期のうちはＡとＢの値が一致しているはずである
が、半導体基板の塗布処理枚数が増えるにつれ、排気風
速センサ表面への薬液飛沫の付着により、徐々にＢの値
がＡの値より小さくなっていく。従って、Ｂ＝Ａとする
には、排気風速センサ10の感度を上げる方向に自動調整
されなければならない。排気風速センサ表面への薬液飛
沫の付着が顕著になり、ついには自動調整を行っても、
Ｂ＜Ａとなるときを限界と判断して、警報を発するよう
にすれば、排気風速センサの洗浄時期が自動的に分かる
ようになる。Initially, the values of A and B should match, but as the number of semiconductor substrates coated increases, the value of B gradually decreases due to the attachment of chemical liquid droplets to the exhaust air velocity sensor surface. It gets smaller. Therefore, in order to make B = A, it is necessary to automatically adjust the sensitivity of the exhaust wind speed sensor 10 in a direction to increase the sensitivity. Adhesion of chemical liquid droplets to the surface of the exhaust air velocity sensor becomes remarkable,
If the time when B <A is determined to be the limit and an alarm is issued, the cleaning time of the exhaust air speed sensor can be automatically known.
この方法では、排気風速センサが薬液飛沫の付着によ
り、使用限界となるまで、Ｂ＝Ａとして、定流量制御弁
９が制御されるため、センサの汚染に関らず、常に一定
の排気流量が保たれる。In this method, the constant flow rate control valve 9 is controlled as B = A until the exhaust air velocity sensor reaches the limit of use due to the adhesion of the chemical liquid droplets. Will be kept.
（実施例２） 第２図は、本発明の実施例２を示す構成図である。Second Embodiment FIG. 2 is a configuration diagram showing a second embodiment of the present invention.
本実施例における排気風速センサ10の感度の自動調整
は次のような手順で行う。すなわち、 第１の弁14と第２の弁15を閉とし、第３の弁16を開に
した状態で空気噴出配管18より、排気風速センサ10が清
浄な状態にて適正風速値Ａとなるような流量に調整され
た空気をセンサ10に向かって噴出させる。空気の流れは
空気噴出配管18から第３の弁16を通って大気開放配管19
に抜ける。このときの測定風速値Ｂを適正風速値Ａに補
正するようセンサ感度を自動調整してセンサの汚染によ
る排気風量の増加を防止し、排気風量の一定化を図る。The automatic adjustment of the sensitivity of the exhaust wind speed sensor 10 in the present embodiment is performed in the following procedure. In other words, when the first valve 14 and the second valve 15 are closed and the third valve 16 is opened, the appropriate wind speed A is obtained from the air ejection pipe 18 when the exhaust wind speed sensor 10 is clean. The air adjusted to such a flow rate is ejected toward the sensor 10. The air flows from the air discharge pipe 18 through the third valve 16 to the atmosphere release pipe 19.
Exit. At this time, the sensor sensitivity is automatically adjusted so as to correct the measured wind speed value B to the appropriate wind speed value A, thereby preventing an increase in exhaust air volume due to sensor contamination and stabilizing the exhaust air volume.
他の動作は実施例１と同様である。 Other operations are the same as in the first embodiment.
本実施例の利点は実施例１に比べて配管系統が簡素に
なる点と、必要に応じて塗布処理が行われていないとき
に、空気噴出配管18より、多量の空気を噴出させると、
排気風速センサ10の表面に付着している薬液飛沫をセン
サを取外すことなく、ある程度除去できるという点であ
る。The advantages of this embodiment are that the piping system is simpler than in the first embodiment, and that a large amount of air is ejected from the air ejection piping 18 when the coating process is not performed as necessary.
The point is that chemical liquid droplets adhering to the surface of the exhaust wind speed sensor 10 can be removed to some extent without removing the sensor.
以上説明したように本発明は、排気風速センサの薬液
飛沫による汚染に関らず、塗布処理部の排気流量を一定
に保つことができるので、排気流量の変動に起因する半
導体基板表面の薬液の膜厚均一性の悪化を防ぐことがで
きる。As described above, the present invention can keep the exhaust flow rate of the coating processing unit constant irrespective of the contamination of the exhaust air velocity sensor by the chemical splash, so that the chemical flow on the semiconductor substrate surface due to the fluctuation of the exhaust flow rate can be maintained. Deterioration of film thickness uniformity can be prevented.
従って、半導体製造における製品の歩留りを向上させ
るという効果がある。Accordingly, there is an effect that the yield of products in semiconductor manufacturing is improved.
また、排気風速センサの洗浄時期が自動的に分かると
ともに、従来の危険度のマージンを見た定期的な洗浄に
比べて、はるかに頻度が少なくなるため、管理上、また
作業工数上設備メンテナンス性が著しく向上するという
効果がある。In addition, the cleaning time of the exhaust air velocity sensor is automatically known, and the frequency of cleaning is much less than that of regular cleaning with a view to the margin of the risk. Is significantly improved.
第１図は、本発明の実施例１を示す構成図、第２図は、
本発明の実施例２を示す構成図、第３図は従来例を示す
構成図である。 １……塗布処理部、２……真空チャック ３……半導体基板、４……薬液ノズル ５……排気口、６……ミストトラップ ７……薬液廃液口、８……排気配管 ９……定流量制御弁、10……排気風速センサ 11……定流量排気発生器、12……定流量排気配管 13……外気吸入配管、14……第１の弁 15……第２の弁、16……第３の弁 17……第４の弁、18……空気噴出配管 19……大気開放配管FIG. 1 is a block diagram showing a first embodiment of the present invention, and FIG.
FIG. 3 is a configuration diagram showing a second embodiment of the present invention, and FIG. 3 is a configuration diagram showing a conventional example. DESCRIPTION OF SYMBOLS 1 ... Coating part 2 ... Vacuum chuck 3 ... Semiconductor substrate 4 ... Chemical liquid nozzle 5 ... Exhaust port 6, Mist trap 7 ... Chemical liquid waste port 8, 8 Exhaust piping 9 ... Constant Flow control valve, 10: Exhaust air velocity sensor 11: Constant flow exhaust generator, 12: Constant flow exhaust pipe 13: External air intake pipe, 14: First valve 15: Second valve, 16 … Third valve 17 …… Fourth valve, 18 …… Air injection pipe 19 …… Air release pipe
Claims (1)
ク制御する排気風速センサと、排気風速センサの感度を
補正するための排気配管系統とを有することを特徴とす
る薬液塗布装置。1. An apparatus for applying a chemical liquid, comprising: an exhaust air velocity sensor for feedback-controlling an exhaust air velocity of a chemical liquid application processing unit; and an exhaust pipe system for correcting the sensitivity of the exhaust air velocity sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31522690A JP2629447B2 (en) | 1990-11-20 | 1990-11-20 | Chemical coating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31522690A JP2629447B2 (en) | 1990-11-20 | 1990-11-20 | Chemical coating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04184914A JPH04184914A (en) | 1992-07-01 |
| JP2629447B2 true JP2629447B2 (en) | 1997-07-09 |
Family
ID=18062913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31522690A Expired - Fee Related JP2629447B2 (en) | 1990-11-20 | 1990-11-20 | Chemical coating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2629447B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200143537A (en) * | 2019-06-13 | 2020-12-24 | 세메스 주식회사 | Apparatus and Method for treating substrate |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4897019B2 (en) * | 2009-08-24 | 2012-03-14 | 東京エレクトロン株式会社 | Heat treatment device |
-
1990
- 1990-11-20 JP JP31522690A patent/JP2629447B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200143537A (en) * | 2019-06-13 | 2020-12-24 | 세메스 주식회사 | Apparatus and Method for treating substrate |
| KR102343637B1 (en) | 2019-06-13 | 2021-12-28 | 세메스 주식회사 | Apparatus and Method for treating substrate |
| US11615969B2 (en) | 2019-06-13 | 2023-03-28 | Semes Co., Ltd. | Apparatus and method for treating substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04184914A (en) | 1992-07-01 |
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