JP2620884B2 - Amorphous semiconductor photovoltaic device - Google Patents
Amorphous semiconductor photovoltaic deviceInfo
- Publication number
- JP2620884B2 JP2620884B2 JP1166995A JP16699589A JP2620884B2 JP 2620884 B2 JP2620884 B2 JP 2620884B2 JP 1166995 A JP1166995 A JP 1166995A JP 16699589 A JP16699589 A JP 16699589A JP 2620884 B2 JP2620884 B2 JP 2620884B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- output terminal
- amorphous semiconductor
- receiving surface
- photovoltaic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、非晶質半導体光起電力素子に関し、更に詳
細には、ステンレス、ポリイミド等の可撓性材料製の基
板を用いた非晶質半導体光起電力素子に関するものであ
る。Description: TECHNICAL FIELD The present invention relates to an amorphous semiconductor photovoltaic device, and more particularly, to an amorphous semiconductor photovoltaic device using a substrate made of a flexible material such as stainless steel or polyimide. The present invention relates to a high quality semiconductor photovoltaic device.
（従来の技術） 近年、上記した種類のステンレス、ポリイミド等の基
板を用いた非晶質半導体光起電力素子が多く使用されて
いる。しかしながら、このような基板は不透明であるた
め、素子本体およびその出力端子を基板の表面側に配置
しなければならないが、このように出力端子を基板の表
面側（受光面側となる）に配置した場合には、基板の裏
面側に配置される他の電気回路との接続に工夫が必要と
なる。このため、従来は、出力端子にハンダ等でリード
線を接続し、これを延長して上記他の電気回路に接続し
ていた。(Prior Art) In recent years, amorphous semiconductor photovoltaic elements using a substrate of the above-described type such as stainless steel and polyimide are often used. However, since such a substrate is opaque, the element body and its output terminals must be arranged on the front surface side of the substrate. In this way, the output terminals are arranged on the front surface side (the light receiving surface side) of the substrate. In such a case, it is necessary to devise a connection to another electric circuit disposed on the back side of the substrate. For this reason, conventionally, a lead wire was connected to the output terminal with solder or the like, which was extended and connected to the other electric circuit.
しかしながら、このようにリード線をハンダ等で接続
した場合は、このハンダの部分がかさばり時計、計算機
等の装置に組み込み難かった。However, when the lead wires are connected with solder or the like, it is difficult to incorporate the solder into a bulky timepiece, a computer or the like.
そこで、特開昭61−134080号公報においては、可撓性
の基板の受光面に、素子本体を配置すると共に素子本体
の出力端子を該基板の突出部に配置し、該突出部を受光
面とは反対側の基板の裏面に折り曲げて出力端子を基板
の裏面側に導設するようにした構造のものが提案されて
いる。Therefore, in Japanese Patent Application Laid-Open No. 61-134080, an element main body is arranged on a light receiving surface of a flexible substrate, and an output terminal of the element main body is arranged on a projecting portion of the substrate. A structure has been proposed in which the output terminal is bent to the rear surface of the substrate on the opposite side to lead the output terminal to the rear surface of the substrate.
（発明が解決しようとする課題） しかしながら、上記の特開昭61−134080号公報におい
て提案された構造のものは、出力端子を配置するための
突出部を有する基板を複数個、板材から切り出すとき、
板材に無駄が生じ、非晶質半導体光起電力素子の製造コ
ストが上がる等の問題があった。(Problems to be Solved by the Invention) However, the structure proposed in the above-mentioned Japanese Patent Application Laid-Open No. 61-134080 discloses a method for cutting a plurality of substrates having projections for arranging output terminals from a plate material. ,
There is a problem that the plate material is wasted and the manufacturing cost of the amorphous semiconductor photovoltaic element increases.
そこで、本発明は、製造コストを上げることなく、基
板の裏面に出力端子が形成される非晶質半導体光起電力
素子を提供することを目的とするものである。Therefore, an object of the present invention is to provide an amorphous semiconductor photovoltaic device in which an output terminal is formed on the back surface of a substrate without increasing the manufacturing cost.
（課題を解決するための手段） 本発明の非晶質半導体光起電力素子は、可撓性材料製
の基板の受光面側に素子本体及びその出力端子が形成さ
れた非晶質半導体光起電力素子において、前記出力端子
の近傍の基板に入れられた切り込みによって形成された
舌片が切り込みに沿って折り曲げられて前記基板の非受
光面に重ね合わされ、該舌片に配置された出力端子が非
受光面側に導出されて成ることを特徴とし、また、可撓
性材料製の基板の受光面側に素子本体及びその出力端子
が形成された非晶質半導体光起電力素子において、前記
出力端子が形成された基板部分に該出力端子と共に入れ
られた切り込みによって形成された舌片が切り込みに沿
って折り曲げられて前記基板の非受光面に重ね合わさ
れ、該舌片に配置された出力端子が非受光面側に導出さ
れて成ることを特徴とする。(Means for Solving the Problems) An amorphous semiconductor photovoltaic device of the present invention comprises an amorphous semiconductor photovoltaic device in which an element body and an output terminal thereof are formed on a light receiving surface side of a substrate made of a flexible material. In the power element, the tongue formed by the cut in the substrate near the output terminal is bent along the cut and overlapped on the non-light receiving surface of the substrate, and the output terminal arranged on the tongue is An amorphous semiconductor photovoltaic device in which an element body and its output terminal are formed on a light receiving surface side of a substrate made of a flexible material, wherein the output is provided on a non-light receiving surface side. A tongue formed by a cut formed in the portion of the substrate with the output terminal together with the output terminal is bent along the cut and overlapped on the non-light-receiving surface of the substrate, and the output terminal arranged on the tongue is Non-light-receiving surface side Is derived.
（作用） 出力端子の近傍の基板に入れられた切り込みによって
形成された舌片又は前記出力端子が形成された基板部分
に該出力端子と共に入れられた切り込みによって形成さ
れた舌片が切り込みに沿って折り曲げられて前記基板の
非受光面に重ね合わされて成るので、受光面に形成され
た出力端子をリード線を用いることなく、基板の裏面す
なわち、非受光面側に導出される。(Operation) The tongue formed by the cut in the substrate near the output terminal or the tongue formed by the cut formed in the substrate portion with the output terminal together with the output terminal is formed along the cut. Since it is bent and superimposed on the non-light-receiving surface of the substrate, the output terminals formed on the light-receiving surface are led to the back surface of the substrate, that is, the non-light-receiving surface side without using lead wires.
（実施例） 以下、添付図面を参照しつつ、本発明の好ましい実施
例による非晶質半導体光起電力素子について説明する。Hereinafter, an amorphous semiconductor photovoltaic device according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings.
第１図は、本発明の第１実施例による非晶質半導体光
起電力素子の平面図であり、第２図は、第１図の線Ａ−
Ａに沿う断面図である。FIG. 1 is a plan view of an amorphous semiconductor photovoltaic device according to a first embodiment of the present invention, and FIG. 2 is a line A- of FIG.
It is sectional drawing which follows A.
この図において、符号１はステンレス基板を示し、こ
の基板１は、その全面に絶縁膜２を有し、絶縁基板とさ
れている。この絶縁膜２は、例えばシリコーン系樹脂を
印刷して形成することができる。この基板１上には、下
部電極３、非晶質半導体層４及び上部電極５から成る素
子本体が形成されている。これを更に詳細に説明する
と、基板１上には、先ず、下部電極３が、例えばクロム
蒸着により成膜されている。この下部電極３の上には、
プラズマCVD装置により非晶質半導体層４が形成されて
いる。この非晶質半導体層４は、下から順に厚さ50から
150ÅのＰ型層、厚さ4000から6000ÅのＩ形層、および
厚さ200から300ÅのＮ型層を成膜してなるものである。In this drawing, reference numeral 1 denotes a stainless steel substrate, and this substrate 1 has an insulating film 2 on its entire surface and is an insulating substrate. This insulating film 2 can be formed by printing a silicone resin, for example. On the substrate 1, an element body composed of a lower electrode 3, an amorphous semiconductor layer 4, and an upper electrode 5 is formed. To explain this in more detail, first, the lower electrode 3 is formed on the substrate 1 by, for example, chromium evaporation. On this lower electrode 3,
An amorphous semiconductor layer 4 is formed by a plasma CVD apparatus. This amorphous semiconductor layer 4 has a thickness of 50 from the bottom.
It is formed by forming a 150-degree P-type layer, an I-type layer having a thickness of 4000 to 6000 degrees, and an N-type layer having a thickness of 200 to 300 degrees.
上記非晶質半導体層４の上部には、上部電極５が、IT
O蒸着により形成されている。上記下部電極３および上
部電極５には、従来の通り、基板１の表面側に配置され
た出力端子６が形成されている。On top of the amorphous semiconductor layer 4, an upper electrode 5
It is formed by O evaporation. The lower electrode 3 and the upper electrode 5 are provided with an output terminal 6 disposed on the surface side of the substrate 1 as in the related art.
更に、最上面全面に、上記出力端子６部分を除いて、
透光性の良い樹脂、例えばエポキシ系樹脂を印刷するこ
とによって形成された保護層７が設けられている。Furthermore, except for the output terminal 6 part,
A protective layer 7 formed by printing a resin having good translucency, for example, an epoxy resin is provided.
上記出力端子６は、例えば第３図に示すように、該出
力端子近傍の基板１部分に縦に切り込み８を入れて舌片
12を形成し、該舌片12を折り曲げ線９のところで、第４
図（ａ）、（ｂ）、（ｃ）に示した順で、基板１の裏面
1a側に折り曲げて基板１の非受光面に重ね合わせること
により、基板１の裏面1aに面するようにされる。For example, as shown in FIG. 3, the output terminal 6 is formed by making a notch 8 in a portion of the substrate 1 near the output terminal to form a tongue.
12 is formed, and the tongue piece 12 is bent at the folding line 9 to form a fourth
The back surface of the substrate 1 in the order shown in FIGS.
By bending to the side of 1a and superimposing on the non-light receiving surface of the substrate 1, it is made to face the back surface 1a of the substrate 1.
なお、第５図に示すように、基板１および出力端子６
に横方向に切り込み８を入れ、折り曲げ線９のところで
折り曲げるようにしてもよい。この場合には、上記切り
込み８は、図示したように出力端子６の途中で終わらせ
る必要がある。In addition, as shown in FIG.
A notch 8 may be made in the lateral direction, and the sheet may be bent at a bending line 9. In this case, the notch 8 needs to end in the middle of the output terminal 6 as shown.
次に、第６図以降を参照して、本発明の第２の実施例
による丸型非晶質半導体光起電力素子について説明する
と、この実施例の場合には、第６図に示したように、基
板１の出力端子６の両側にそれぞれ切り込み10を入れて
舌片12を形成し、該舌片12を折り曲げ線11のところで折
り曲げて基板１の非受光面に重ね合わせることによっ
て、出力端子６は、基板１の裏面1aに面するようにされ
る。このように、出力端子６が折り曲げられた状態の丸
型非晶質半導体光起電力素子の表面すなわち受光面側を
第７図に、また裏面すなわち非受光面側を第８図にそれ
ぞれ示した。Next, a round amorphous semiconductor photovoltaic device according to a second embodiment of the present invention will be described with reference to FIG. 6 and subsequent figures. In this embodiment, as shown in FIG. Then, a notch 10 is formed on each side of the output terminal 6 of the substrate 1 to form a tongue piece 12, and the tongue piece 12 is bent at a bending line 11 and superimposed on the non-light-receiving surface of the substrate 1, whereby the output terminal 6 faces the back surface 1a of the substrate 1. FIG. 7 shows the surface of the round amorphous semiconductor photovoltaic element in which the output terminal 6 is bent, that is, the light receiving surface side, and FIG. 8 shows the rear surface, that is, the non-light receiving surface side. .
この実施例においては、他の部分・部材は、上記第１
実施例と対応しているので、同一の符号を付してその説
明を省略する。In this embodiment, the other parts and members are the first
Since this corresponds to the embodiment, the same reference numeral is assigned and the description is omitted.
（発明の効果） 本発明においては、従来からステンレスやポリイミド
等の基板の受光面上に形成されている出力端子自体を、
その近傍の基板に入れられた切り込みによって形成され
た舌片又は前記出力端子が形成された基板部分に該出力
端子と共に入れられた切り込みによって形成された舌片
を、その切り込みに沿って折り曲げることにより、非受
光面側にまわして、出力端子を基板の裏面すなわち非受
光面側に形成するようにしたので、特開昭61−134080号
公報に開示されているように突出端子を形成する場合に
比べて、大幅に材料の節約をすることができ、従って、
製造コストが大きく低減することができる。(Effect of the Invention) In the present invention, the output terminal itself conventionally formed on the light receiving surface of a substrate such as stainless steel or polyimide is
By bending a tongue formed by a notch formed in a substrate in the vicinity thereof or a tongue formed by a notch formed together with the output terminal in a portion of the substrate on which the output terminal is formed, along the notch. Since the output terminals are formed on the back surface of the substrate, that is, on the non-light-receiving surface side, by turning to the non-light-receiving surface side, when the protruding terminals are formed as disclosed in JP-A-61-134080, In comparison, it can save a lot of material,
Manufacturing costs can be greatly reduced.
第１図は、出力端子が配置された舌片を折り曲げる前
の、本発明の第１実施例による非晶質半導体光起電力素
子の平面図、第２図は、第１図の線Ａ−Ａに沿う断面
図、第３図は、切り込みの入れ方の１例を示す出力端子
部の拡大図、第４図（ａ）、（ｂ）、（ｃ）は、切り込
みを入れられた出力端子部の折り曲げの手順を示す側面
図、第５図は、切り込みの入れ方の他の例を示す出力端
子部の拡大図、第６図は、出力端子が配置された舌片を
折り曲げる前の、本発明の第２実施例による丸型非晶質
半導体光起電力素子の平面図、第７図は、第２実施例に
よる丸型非晶質半導体光起電力素子の概略平面図、第８
図は、第２実施例による丸型非晶質半導体光起電力素子
の概略背面図である。 １……基板、６……出力端子 ８、10……切り込み、９、11……折り曲げ線 12……舌片FIG. 1 is a plan view of an amorphous semiconductor photovoltaic device according to a first embodiment of the present invention before bending a tongue on which an output terminal is arranged, and FIG. 2 is a line A- in FIG. A cross-sectional view along A, FIG. 3 is an enlarged view of an output terminal portion showing one example of how to make a cut, and FIGS. 4 (a), (b) and (c) are cut-out output terminals. FIG. 5 is an enlarged view of an output terminal portion showing another example of how to make a cut, and FIG. 6 is a side view showing a procedure before bending a tongue piece on which the output terminal is arranged. FIG. 7 is a plan view of a round amorphous semiconductor photovoltaic device according to a second embodiment of the present invention. FIG. 7 is a schematic plan view of a round amorphous semiconductor photovoltaic device according to the second embodiment.
The figure is a schematic rear view of the round amorphous semiconductor photovoltaic device according to the second embodiment. 1 ... board, 6 ... output terminal 8, 10 ... notch, 9, 11 ... bending line 12 ... tongue piece
Claims (2)
及びその出力端子が形成された非晶質半導体光起電力素
子において、前記出力端子近傍の基板に入れられた切り
込みによって形成された舌片が切り込みに沿って折り曲
げられて前記基板の非受光面に重ね合わされ、該舌片に
配置された出力端子が非受光面側に導出されて成ること
を特徴とする非晶質半導体光起電力素子。1. An amorphous semiconductor photovoltaic device in which an element body and its output terminal are formed on a light receiving surface side of a substrate made of a flexible material, formed by a cut made in a substrate near the output terminal. An amorphous semiconductor, wherein the formed tongue is bent along the cut and overlapped on the non-light-receiving surface of the substrate, and an output terminal arranged on the tongue is led out to the non-light-receiving surface side. Photovoltaic element.
及びその出力端子が形成された非晶質半導体光起電力素
子において、前記出力端子が形成された基板部分に該出
力端子と共に入れられた切り込みによって形成された舌
片が切り込みに沿って折り曲げられて前記基板の非受光
面に重ね合わされ、該舌片に配置された出力端子が非受
光面側に導出されて成ることを特徴とする非晶質半導体
光起電力素子。2. An amorphous semiconductor photovoltaic device in which an element body and its output terminal are formed on a light receiving surface side of a substrate made of a flexible material, wherein the output terminal is formed on a substrate portion on which the output terminal is formed. The tongue piece formed by the notch inserted together is bent along the notch and overlapped on the non-light receiving surface of the substrate, and the output terminal arranged on the tongue piece is led out to the non-light receiving surface side. An amorphous semiconductor photovoltaic element characterized by the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1166995A JP2620884B2 (en) | 1989-06-30 | 1989-06-30 | Amorphous semiconductor photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1166995A JP2620884B2 (en) | 1989-06-30 | 1989-06-30 | Amorphous semiconductor photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0334472A JPH0334472A (en) | 1991-02-14 |
| JP2620884B2 true JP2620884B2 (en) | 1997-06-18 |
Family
ID=15841432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1166995A Expired - Lifetime JP2620884B2 (en) | 1989-06-30 | 1989-06-30 | Amorphous semiconductor photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2620884B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993019491A1 (en) * | 1992-03-19 | 1993-09-30 | Siemens Solar Gmbh | Weather-resistant thin layer solar module |
| JP4865119B2 (en) * | 1999-12-24 | 2012-02-01 | 日新製鋼株式会社 | Insulating substrate for solar cell having excellent heat resistance and method for producing the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60123073A (en) * | 1983-12-08 | 1985-07-01 | Fuji Electric Corp Res & Dev Ltd | Thin-film solar cell |
| JPS61134080A (en) * | 1984-12-04 | 1986-06-21 | Matsushita Electric Ind Co Ltd | Thin film solar cell |
-
1989
- 1989-06-30 JP JP1166995A patent/JP2620884B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0334472A (en) | 1991-02-14 |
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