JP2605644B2 - Exposure apparatus and exposure method - Google Patents
Exposure apparatus and exposure methodInfo
- Publication number
- JP2605644B2 JP2605644B2 JP6321993A JP32199394A JP2605644B2 JP 2605644 B2 JP2605644 B2 JP 2605644B2 JP 6321993 A JP6321993 A JP 6321993A JP 32199394 A JP32199394 A JP 32199394A JP 2605644 B2 JP2605644 B2 JP 2605644B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- substrate
- reduction lens
- exposure
- deviation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【０００１】本発明は、原画パターンを半導体ウエハ上
面にステップ・アンド・リピートしながら、縮小レンズ
によって縮小投影露光する露光装置および露光方法に関
する。The present invention relates to an exposure apparatus and an exposure method for performing reduction projection exposure by a reduction lens while step-and-repeat an original pattern on an upper surface of a semiconductor wafer.
I do .
【０００２】[0002]
【従来の技術】従来、上記分野の露光方法としては、特
開昭５２−５５４７２号公報に記載されたものが知られ
ている。2. Description of the Related Art Heretofore, as an exposure method in the above field, a method described in Japanese Patent Application Laid-Open No. 52-55472 is known.
【０００３】この従来の技術は、（１）レンズの光軸に
垂直な平面上で、レンズの周辺に正方形に配置された４
つの空気センサの開口と、これら開口の直下における半
導体ウエハ上面との距離に応じた４つの信号を検出し、
（２）空気センサからの４つの信号の和による１つの出
力値と、（３）それぞれ対角線上位置の２つの開口から
の信号の差による２つの出力値とを使い、（４）半導体
上面の焦点合わせと傾き調整とを同時に行っていた。[0003] This conventional technique is based on (1) a method in which a square is arranged around a lens on a plane perpendicular to the optical axis of the lens.
Detecting four signals corresponding to the distance between the openings of the two air sensors and the upper surface of the semiconductor wafer immediately below these openings,
(2) One output value based on the sum of four signals from the air sensor and (3) Two output values based on a difference between signals from two openings at diagonal positions, and Focusing and tilt adjustment were performed simultaneously.
【０００４】この空気センサは、図１に示すように、縮
小レンズの周辺の光学アセンブリ中の４カ所の開口１０
１、１０２、１０３、１０４と、これら開口の直下にお
ける半導体ウエハ上面との距離を同時に検出するもので
ある。そして、空気センサから同時に測定される４カ所
の開口からの検出信号を用い、いわゆる零点法により、
試料ホルダーの傾きを調整する駆動機構にフィードバッ
クして、半導体ウエハ上面の傾きを矯正し、焦点合わせ
を行っていた。As shown in FIG. 1, this air sensor has four openings 10 in an optical assembly around a reduction lens.
1, 102, 103, and 104 and the distance to the upper surface of the semiconductor wafer immediately below these openings are simultaneously detected. Then, using the detection signals from the four openings simultaneously measured from the air sensor, by the so-called zero point method,
Feedback is provided to a drive mechanism for adjusting the tilt of the sample holder, the tilt of the upper surface of the semiconductor wafer is corrected, and focusing is performed.
【０００５】要するに、従来の技術の半導体ウエハ上面
の露光方法では、光学アセンブリ中の４カ所の開口部を
使って、同時に測定される４ヵ所の測定点までの距離が
所定値になるように半導体ウエハ上面の傾きを露光のた
びごとに矯正して露光を行うものとなっていた。[0005] In short, in the conventional method of exposing the upper surface of a semiconductor wafer, the semiconductor device is designed to use four openings in the optical assembly so that the distance to four measurement points measured at the same time becomes a predetermined value. The exposure is performed by correcting the inclination of the upper surface of the wafer each time the exposure is performed.
【０００６】[0006]
【発明が解決しようとする課題】この従来の技術では、
図１に示すように、空気センサの開口１０１、１０２、
１０３、１０４が縮小レンズ１００より外側にある。縮
小レンズの結像面の直径は、結像光学系であるので縮小
レンズの直径より小さい。したがって、４つの開口が対
向した半導体ウエハ上面上の４カ所は、縮小レンズの結
像面と同一の大きさの半導体ウエハ上面の被露光領域を
取り囲む外周上の４カ所となる。In this prior art,
As shown in FIG. 1, openings 101, 102,
103 and 104 are outside the reduction lens 100. The diameter of the imaging surface of the reduction lens is smaller than the diameter of the reduction lens because it is an imaging optical system. Therefore, the four locations on the upper surface of the semiconductor wafer where the four apertures face each other are the four locations on the outer periphery surrounding the exposed region on the upper surface of the semiconductor wafer having the same size as the imaging surface of the reduction lens.
【０００７】そのため、図２（ａ）のように、半導体ウ
エハ上面の平坦度が良好な場合には、被露光領域と縮小
レンズの結像面とを一致させることができるが、図２
（ｂ）のように、半導体ウエハ上面に凹凸部分があり平
坦度が悪い場合に、被露光領域外の４カ所で距離を測っ
て半導体ウエハ上面の傾きを矯正するため、この４カ所
の内側にある被露光領域の位置を検出することはできな
い。したがって、この検出される４カ所からの信号によ
って半導体ウエハ上面と縮小レンズの結像面とをほぼ平
行にできても、被露光領域に凹凸部分のある場合には、
この半導体ウエハ上面と縮小レンズの結像面とを一致さ
せることができなくなる場合があり、必要とされる解像
力が得られないという場合がしばしば生じるという問題
があることを発見した。For this reason, as shown in FIG. 2A, when the flatness of the upper surface of the semiconductor wafer is good, the region to be exposed and the image forming surface of the reduction lens can be matched.
As shown in (b), when there are irregularities on the upper surface of the semiconductor wafer and the flatness is poor, the inclination of the upper surface of the semiconductor wafer is corrected by measuring the distance at four positions outside the exposure area. It is not possible to detect the position of a certain exposure area. Therefore, even if the upper surface of the semiconductor wafer and the image forming surface of the reduction lens can be made substantially parallel by the signals from the four detected positions, if the exposed area has an uneven portion,
It has been discovered that the upper surface of the semiconductor wafer may not be able to coincide with the image plane of the reduction lens, and that the required resolution may often not be obtained.
【０００８】また、上記従来技術ではウエハと上面との
距離を求め、３ヶ所の指示部を独立に駆動制御して、ウ
エハの傾きを矯正し露光するので、３ヶ所の位置決め誤
差が重畳して焦点ぼけが生じたり、焦点合わせに時間を
要し、スループットが低下するという問題があった。 本
発明の目的は、短時間で高精度の焦点合わせが行える露
光装置および露光方法を提供することにある。Further , in the above-mentioned conventional technology, the wafer is
Obtain the distance, drive the three indicator units independently, and
Exposure after correcting the inclination of EHA
Differences are superimposed resulting in defocus and time for focusing.
In other words, there is a problem that the throughput is reduced. Book
An object of the invention is to provide an exposure device capable of performing high-precision focusing in a short time.
An optical device and an exposure method are provided .
【０００９】[0009]
【課題を解決するための手段】上記目的は、光源と、縮
小レンズと、露光される基板を載置する試料台とを備え
た露光装置であって、前記縮小レンズの結像面から前記
基板上面までの偏差を検出する検出手段と、検出された
前記偏差に基づき前記試料台の傾きを矯正するための、
固定された１つの支点と駆動機構を備えた２つの支点と
を備えた移動台と、前記移動台を上下に移動する機構を
備えたステージと、前記ステージを水平方向に移動する
手段とを有することを特徴とする露光装置、また、試料
台上に基板を載置する工程と、縮小レンズの結像面から
前記基板上面までの偏差を検出する検出工程と、前記試
料台を３点で支える支点の１つは固定し、他の２つの高
さを上記偏差に基づいて調節することにより上記基板の
傾きを矯正する矯正工程と、その後、前記縮小レンズの
結像面に前記基板の被露光領域を逐次合わせて露光する
ステップアンドリピート工程とを有することを特徴とす
る露光方法により達成することができる。An object of the present invention is to provide a light source and a light source.
A small lens and a sample stage on which the substrate to be exposed is placed
An exposure apparatus, wherein:
Detecting means for detecting a deviation to the upper surface of the substrate;
For correcting the inclination of the sample stage based on the deviation,
One fixed fulcrum and two fulcrums with a drive mechanism
And a mechanism for moving the moving table up and down.
Equipped stage and move the stage horizontally
Exposure apparatus characterized by having means
From the process of placing the substrate on the table and the imaging surface of the reduction lens
A detecting step of detecting a deviation up to the upper surface of the substrate;
One of the fulcrums supporting the platform is fixed, and the other two
Of the substrate by adjusting the
A correcting step for correcting the inclination, and thereafter,
Exposure is performed by sequentially aligning the exposed area of the substrate with the image forming surface
And a step-and-repeat process.
Exposure method .
【００１０】[0010]
【作用】上記技術的手段においては、縮小レンズの結像
面から半導体ウエハ上面の被露光領域までの偏差を該縮
小レンズの結像面の直下で検出する検出手段を用いてい
るので、縮小レンズの結像面直下での半導体ウエハ上面
までの距離検出が実現される。In the above-mentioned technical means, since the detecting means for detecting the deviation from the image forming surface of the reduction lens to the area to be exposed on the upper surface of the semiconductor wafer is used just below the image forming surface of the reduction lens, the reduction lens is used. The distance detection to the upper surface of the semiconductor wafer just below the image plane is realized.
【００１１】[0011]
【実施例】以下に、この発明の好適一実施例を図面を参
照しながら説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of the present invention will be described below with reference to the drawings.
【００１２】図３はこの実施例に係る装置の概略図で、
縮小レンズに設けた一つの検出器を用いて、半導体ウエ
ハ上面の傾きを検出して矯正し、焦点合わせをし、半導
体ウエハ上面に露光する方法を行うことのできる縮小投
影露光装置の概略図である。縮小レンズ１８は光軸１８
ａが台板１１の表面、すなわちステージ１０の移動する
案内面１１ａに垂直になるように設けられ、かつ縮小レ
ンズ１８の下端には縮小レンズの結像面に半導体ウエハ
上面を合わせ、すなわち焦点合わせを行なうようにする
ため、半導体ウエハ上面までの距離を検出する検出器１
９が取付けてある。半導体ウエハ３は半導体ウエハ台６
上に載置される。半導体ウエハ台６は第１の支持機構７
によって半導体ウエハ上面の傾きを微細に調整し得るよ
うに移動台８上に設けられ、また移動台８は第２の支持
機構９により上下方向に微細に移動し得るようにステー
ジ１０上に設けられ、さらにステージ１０は移動機構
（図示せず）により台板１１上を前後左右に移動し得る
ように構成されている。FIG. 3 is a schematic diagram of an apparatus according to this embodiment.
FIG. 2 is a schematic view of a reduction projection exposure apparatus capable of performing a method of detecting and correcting the inclination of the upper surface of a semiconductor wafer, performing focusing, and exposing the upper surface of the semiconductor wafer using one detector provided on a reduction lens. is there. The reduction lens 18 is the optical axis 18
a is provided so as to be perpendicular to the surface of the base plate 11, that is, the guide surface 11a on which the stage 10 moves, and the lower end of the reduction lens 18 aligns the upper surface of the semiconductor wafer with the imaging surface of the reduction lens, that is, focuses. Detector 1 for detecting the distance to the upper surface of the semiconductor wafer
9 is attached. The semiconductor wafer 3 is a semiconductor wafer table 6
Placed on top. The semiconductor wafer table 6 has a first support mechanism 7
The movable table 8 is provided on the stage 10 so that the tilt of the upper surface of the semiconductor wafer can be finely adjusted by the second support mechanism 9 so that the movable table 8 can be finely moved in the vertical direction. Further, the stage 10 is configured to be able to move back and forth and left and right on the base plate 11 by a moving mechanism (not shown).
【００１３】第１の支持機構７は図４の移動台８に示す
ように、移動台８上のほぼ点対称の３点Ａ、Ｂ、Ｃの位
置にそれぞれ取付けた支点１２、１４、１３を有する。
このうち支点１２は固定支点であり、他の支点１３と１
４はそれぞれ駆動機構１３ａと１４ａにより先端を微細
に上下することができる。半導体ウエハ台６は、これら
の支点１２、１３、１４の高さを変えることにより、そ
の表面の傾きを微細に調整可能である。第２の支持機構
９は、移動台８の裏面に取付けたくさび板１５と、ステ
ージ１０上に左右方向に移動可能なように設けたくさび
板１６とから構成される。移動台８はガイド（図示せ
ず）により上下方向にのみ適宜移動可能な構造である。
駆動機構１７によりくさび板１６を左右方向に移動する
ことにより、移動台８を微細に上下移動できる。The first support mechanism 7 has fulcrums 12, 14 and 13 attached at three substantially symmetrical points A, B and C on the movable table 8, as shown in a movable table 8 in FIG. Have.
The fulcrum 12 is a fixed fulcrum, and the other fulcrums 13 and 1
The tip 4 can be finely moved up and down by the drive mechanisms 13a and 14a, respectively. The inclination of the surface of the semiconductor wafer table 6 can be finely adjusted by changing the heights of the fulcrums 12, 13, and 14. The second support mechanism 9 includes a wedge plate 15 attached to the back surface of the movable base 8 and a wedge plate 16 provided on the stage 10 so as to be movable in the left-right direction. The movable table 8 has a structure that can be appropriately moved only in the vertical direction by a guide (not shown).
By moving the wedge plate 16 in the left-right direction by the driving mechanism 17, the movable table 8 can be finely moved up and down.
【００１４】縮小レンズの結像面から半導体ウエハ上面
までの偏差に応じた検出信号は、検出器１９から判別回
路２０に加えられ、所定値（縮小レンズ１８の焦点距
離、すなわち基準面となる縮小レンズの結像面の位置に
対応した値）から変化すると、その偏差に対応した信号
が判別回路２０から増幅器２１に加えられる。さらに信
号は増幅されて切換回路２２に加わり、切換えにより駆
動機構１３ａ、１４ａ、または１７に分配されて、それ
ぞれに内蔵された駆動用のモータ（いずれも図示せず）
が駆動する。A detection signal corresponding to the deviation from the image forming plane of the reduction lens to the upper surface of the semiconductor wafer is applied from a detector 19 to a discriminating circuit 20, and a predetermined value (the focal length of the reduction lens 18, ie, the reduction of the reference plane) (A value corresponding to the position of the imaging plane of the lens), a signal corresponding to the deviation is applied from the discrimination circuit 20 to the amplifier 21. Further, the signal is amplified and applied to the switching circuit 22, and is distributed to the driving mechanisms 13a, 14a or 17 by switching, and the driving motors (each not shown) incorporated in each of the driving mechanisms 13a, 14a or 17 are provided.
Drives.
【００１５】次に、縮小レンズの結像面を基準面とし
て、この縮小レンズの結像面から半導体ウエハ上面まで
の偏差を被露光領域で検出する検出器を用いて、該縮小
レンズの結像面と該被露光領域との偏差を検出し、半導
体ウエハ上面の少なくとも異なる３カ所で該偏差が所定
値になるように該半導体ウエハ上面の傾きを矯正すれ
ば、半導体ウエハ上面の少なくとも異なる３カ所で、半
導体ウエハ上面が縮小レンズの結像面とほぼ平行となる
矯正方法の手順を述べる。Next, using the image forming surface of the reduction lens as a reference surface and using a detector for detecting a deviation from the image formation surface of the reduction lens to the upper surface of the semiconductor wafer in the area to be exposed, the image formation of the reduction lens is performed. By detecting a deviation between the surface and the exposed area and correcting the inclination of the upper surface of the semiconductor wafer so that the deviation becomes a predetermined value at at least three different positions on the upper surface of the semiconductor wafer, at least three different positions on the upper surface of the semiconductor wafer are corrected. Now, a procedure of a correction method in which the upper surface of the semiconductor wafer is substantially parallel to the imaging plane of the reduction lens will be described.
【００１６】搬送機構（図示せず）により半導体ウエハ
台６上に半導体ウエハ３を置き、ステージ１０を台板１
１上で移動させ、移動台上の支点１２の位置Ａを検出器
１９の直下に位置決めする。ここで、切換回路２２を駆
動機構１７のモータに切換え、増幅器２１の出力、すな
わち支点１２上方の検出器から求められる半導体ウエハ
上面との距離、すなわち、縮小レンズの結像面からの偏
差に対応した出力が駆動機構１７に加わり、くさび板１
６が左右に移動して半導体ウエハ台を微細に上下動し
て、半導体ウエハ上面のＡ点部分は縮小レンズの焦点位
置に来る。The semiconductor wafer 3 is placed on the semiconductor wafer table 6 by a transfer mechanism (not shown), and the stage 10 is
1 and the position A of the fulcrum 12 on the moving table is positioned immediately below the detector 19. Here, the switching circuit 22 is switched to the motor of the driving mechanism 17, and the output of the amplifier 21, that is, the distance from the upper surface of the semiconductor wafer obtained from the detector above the fulcrum 12, that is, the deviation from the imaging surface of the reduction lens, is determined. The output is applied to the drive mechanism 17 and the wedge plate 1
6 moves left and right to finely move the semiconductor wafer table up and down, and the point A on the upper surface of the semiconductor wafer comes to the focal position of the reduction lens.
【００１７】次に、切換回路２２を駆動機構１３ａのモ
ータに切換え、ステージ１０を移動させて支点１３の位
置Ｃを縮小レンズの光軸１８ａ上の検出器の直下に位置
決めする。この状態で駆動機構１３ａを動作させて、半
導体ウエハ上面のＣ点部分を焦点位置に合わせる。Next, the switching circuit 22 is switched to the motor of the driving mechanism 13a, and the stage 10 is moved to position the position C of the fulcrum 13 immediately below the detector on the optical axis 18a of the reduction lens. In this state, the drive mechanism 13a is operated to adjust the point C on the upper surface of the semiconductor wafer to the focal position.
【００１８】さらに切換回路２２を駆動機構１４ａのモ
ータに切換え、ステージ１０を移動し、移動台上のＢ点
を縮小レンズの光軸１８ａの検出器の直下に位置させて
焦点合わせを行い、半導体ウエハ上面のＢ点部分を焦点
位置に合わせる。Further, the switching circuit 22 is switched to the motor of the drive mechanism 14a, the stage 10 is moved, and the point B on the movable table is positioned immediately below the detector of the optical axis 18a of the reduction lens to perform focusing, and The point B on the upper surface of the wafer is adjusted to the focal position.
【００１９】その結果、この半導体ウエハ上面の３カ所
の被露光領域が、基準面である縮小レンズの結像面に合
致するので、この半導体ウエハ上面の３カ所の被露光領
域が縮小レンズの光軸１８ａに直交するように、半導体
ウエハ上面の傾きが矯正される。As a result, the three exposed regions on the upper surface of the semiconductor wafer coincide with the image forming plane of the reduction lens, which is the reference surface. The inclination of the upper surface of the semiconductor wafer is corrected so as to be orthogonal to the axis 18a.
【００２０】次に、回路２２を駆動機構１７のモータに
切換え、検出器１９から送出した距離検出信号を判別回
路２０に加え、所定値の偏差に対応した信号を増幅して
切換回路２２に加えて駆動機構１７のモータを駆動して
半導体ウエハ上面を縮小レンズの光軸方向に移動させる
ことによって自動的に半導体ウエハ上面と縮小レンズの
結像面とをほぼ平行に維持したまま、半導体ウエハ上面
の被露光領域を焦点位置に保持しながら露光することが
できる。Next, the circuit 22 is switched to the motor of the driving mechanism 17, the distance detection signal sent from the detector 19 is applied to the discriminating circuit 20, and the signal corresponding to the deviation of the predetermined value is amplified and applied to the switching circuit 22. By driving the motor of the drive mechanism 17 to move the upper surface of the semiconductor wafer in the optical axis direction of the reduction lens, the upper surface of the semiconductor wafer and the imaging surface of the reduction lens are automatically maintained substantially parallel to each other. Exposure can be performed while holding the exposed region at the focal position.
【００２１】すなわち、縮小レンズの結像面と半導体ウ
エハ上面の被露光領域とを常に合わせるように、ステー
ジ１０を台板１１上でステップ・アンド・リピート移動
させながら、半導体ウエハ上面に回路パターンをそのス
テップ・アンド・リピートの停止時に露光することがで
きる。なお駆動機構１３ａ、１４ａおよび１７は、それ
ぞれモータが増幅器２１に接続されていない時はモータ
回路を短絡する等の通常の保持手段を用いて固定するこ
とができる。That is, the circuit pattern is formed on the upper surface of the semiconductor wafer while the stage 10 is moved step-and-repeat on the base plate 11 so that the image plane of the reduction lens and the area to be exposed on the upper surface of the semiconductor wafer are always aligned. Exposure can be performed when the step-and-repeat is stopped. When the motor is not connected to the amplifier 21, the drive mechanisms 13a, 14a, and 17 can be fixed using ordinary holding means such as short-circuiting the motor circuit.
【００２２】[0022]
【発明の効果】本発明によれば、ウエハ上面の傾きを結
像面に対して矯正し、高精度の焦点合わせを短時間で行
うことができるので、原画パターンを鮮明に且つ高スル
ープットで露光することができる。 According to the present invention, the inclination of the upper surface of the wafer is determined.
Corrects the image plane and performs high-precision focusing in a short time
The original pattern can be clearly and
Exposure can be performed with a put .
【図１】半導体ウエハ上面の傾きを調整する従来の技術
における露光方法に使用されるレべリング装置の空気セ
ンサを示す説明図。FIG. 1 is an explanatory view showing an air sensor of a leveling device used for an exposure method in a conventional technique for adjusting the inclination of the upper surface of a semiconductor wafer.
【図２】従来の技術における問題を説明する断面図。FIG. 2 is a cross-sectional view illustrating a problem in the related art.
【図３】本発明の実施例を説明するための構成図。FIG. 3 is a configuration diagram for explaining an embodiment of the present invention.
【図４】移動台上の３点を示す説明図。FIG. 4 is an explanatory diagram showing three points on a moving table.
３…半導体ウエハ、６…半導体ウエハ台、７…第１の支
持機構、８…移動台、９…第２の支持機構、１０…ステ
ージ、１１…台板、１２，１３，１４…支点、１３ａ，
１４ａ…駆動機構、１５，１６…くさび板、１７…駆動
機構、１８…縮小レンズ、１８ａ…光軸、１９…検出
器。DESCRIPTION OF SYMBOLS 3 ... Semiconductor wafer, 6 ... Semiconductor wafer stand, 7 ... First support mechanism, 8 ... Transfer base, 9 ... Second support mechanism, 10 ... Stage, 11 ... Base plate, 12, 13, 14 ... Support point, 13a ,
14a: drive mechanism, 15, 16: wedge plate, 17: drive mechanism, 18: reduction lens, 18a: optical axis, 19: detector.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 国▲吉▼ 伸治 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 保坂 純男 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 寺澤 恒男 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (56)参考文献 特開 昭55−134812（ＪＰ，Ａ) 特開 昭52−55472（ＪＰ，Ａ) 特開 昭51−6565（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Kuniyoshi Yoshino 1-280 Higashi-Koigabo, Kokubunji-shi, Tokyo Inside Central Research Laboratory, Hitachi, Ltd. (72) Inventor Sumio Hosaka 1-1280 Higashi-Koigabo, Kokubunji-shi, Tokyo Stock (72) Tsuneo Terasawa, Inventor 1-280 Higashi-Koigakubo, Kokubunji-shi, Tokyo Hitachi, Ltd. Central Research Laboratory (56) References JP-A-55-134812 (JP, A) JP-A-52- 55472 (JP, A) JP-A-51-6655 (JP, A)
Claims (7)
載置する試料台とを備えた露光装置であって、 前記縮小レンズの結像面から前記基板上面までの偏差を
検出する検出手段と、 検出された前記偏差に基づき前記試料台の傾きを矯正す
るための、固定された１つの支点と駆動機構を備えた２
つの支点とを備えた移動台と、 前記移動台を上下に移動する機構を備えたステージと、 前記ステージを水平方向に移動する手段とを有すること
を特徴とする露光装置。 1. An exposure apparatus comprising a light source, a reduction lens, and a sample stage on which a substrate to be exposed is mounted, wherein the detection apparatus detects a deviation from an image forming surface of the reduction lens to an upper surface of the substrate. A fixed fulcrum and a driving mechanism for correcting the inclination of the sample stage based on the detected deviation.
An exposure apparatus, comprising: a moving table having two fulcrums; a stage having a mechanism for moving the moving table up and down; and means for moving the stage in a horizontal direction.
徴とする請求項１記載の露光装置。 2. An exposure apparatus according to claim 1, wherein said substrate is a semiconductor wafer.
するものであることを特徴とする請求項１又は２記載の
露光装置。 3. An exposure apparatus according to claim 1, wherein said detection means detects three or more deviations.
び板を含むことを特徴とする請求項１乃至３の何れかに
記載の露光装置。 4. The exposure apparatus according to claim 1, wherein the mechanism for moving the movable table up and down includes a wedge plate.
する検出工程と、 前記試料台を３点で支える支点の１つは固定し、他の２
つの高さを上記偏差に基づいて調節することにより上記
基板の傾きを矯正する矯正工程と、 その後、前記縮小レンズの結像面に前記基板の被露光領
域を逐次合わせて露光するステップアンドリピート工程
とを有することを特徴とする露光方法。 5. A step of mounting a substrate on a sample stage, a step of detecting a deviation from an image forming surface of a reduction lens to an upper surface of the substrate, and one of fulcrums supporting the sample stage at three points: Fixed and the other two
Correcting the inclination of the substrate by adjusting the heights based on the deviation, and thereafter, exposing the exposed area of the substrate to the image forming surface of the reduction lens sequentially and exposing the same. An exposure method comprising:
徴とする請求項５記載の露光方法。 6. The exposure method according to claim 5, wherein said substrate is a semiconductor wafer.
する工程であることを特徴とする請求項５又は６記載の
露光方法。 7. The detection step exposure method according to claim 5 or 6, characterized in that the step of detecting three places or more deviations.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6321993A JP2605644B2 (en) | 1994-12-26 | 1994-12-26 | Exposure apparatus and exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6321993A JP2605644B2 (en) | 1994-12-26 | 1994-12-26 | Exposure apparatus and exposure method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60038562A Division JPH0618168B2 (en) | 1985-02-27 | 1985-02-27 | Exposure method for exposing an original image pattern on the upper surface of a semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07211632A JPH07211632A (en) | 1995-08-11 |
| JP2605644B2 true JP2605644B2 (en) | 1997-04-30 |
Family
ID=18138734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6321993A Expired - Lifetime JP2605644B2 (en) | 1994-12-26 | 1994-12-26 | Exposure apparatus and exposure method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2605644B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR200465352Y1 (en) * | 2008-07-16 | 2013-02-14 | 세메스 주식회사 | Semiconductor chip pick-up apparatus for die bonder |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0097380A3 (en) * | 1979-04-02 | 1984-08-29 | Eaton-Optimetrix Inc. | A system for positioning a utilization device |
-
1994
- 1994-12-26 JP JP6321993A patent/JP2605644B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07211632A (en) | 1995-08-11 |
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