JP2593912B2 - Lead frame - Google Patents

Lead frame

Info

Publication number
JP2593912B2
JP2593912B2 JP63106738A JP10673888A JP2593912B2 JP 2593912 B2 JP2593912 B2 JP 2593912B2 JP 63106738 A JP63106738 A JP 63106738A JP 10673888 A JP10673888 A JP 10673888A JP 2593912 B2 JP2593912 B2 JP 2593912B2
Authority
JP
Japan
Prior art keywords
resin
stage
inflow hole
lead frame
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63106738A
Other languages
Japanese (ja)
Other versions
JPH01278055A (en
Inventor
満晴 清水
三喜 今井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP63106738A priority Critical patent/JP2593912B2/en
Priority to KR1019890005547A priority patent/KR890016660A/en
Publication of JPH01278055A publication Critical patent/JPH01278055A/en
Application granted granted Critical
Publication of JP2593912B2 publication Critical patent/JP2593912B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は半導体素子を搭載するステージ部と封止樹脂
との間の密着性を向上させることができるリードフレー
ムに関する。
Description: TECHNICAL FIELD The present invention relates to a lead frame that can improve the adhesion between a stage on which a semiconductor element is mounted and a sealing resin.

(従来の技術) 樹脂封止型半導体装置では、第3図に示すように、リ
ードフレーム10のステージ部12上に半導体素子14を搭載
して、必要なワイヤボンディング等を施した後、半導体
素子14および内部リード部を樹脂16で封止している。
(Prior Art) In a resin-encapsulated semiconductor device, as shown in FIG. 3, a semiconductor element 14 is mounted on a stage 12 of a lead frame 10 and subjected to necessary wire bonding and the like. 14 and the internal leads are sealed with resin 16.

ところで樹脂は一般的に吸湿性を有し、また内部リー
ド部等のリード部との界面から水分が浸透しやすく、こ
れらの水分が、外部リード部にはんだ被覆をする際のは
んだ浴への浸漬などの加熱工程を経る際に気化膨張し、
リードフレームと樹脂間の界面を剥離させる問題点があ
る。特に昨今は半導体素子14が大型化する傾向にあるこ
とから、ステージ部12の面積も必然的に増大し、このた
め気化膨張した水蒸気によりステージ部12裏面と樹脂16
との間に大きな圧力が作用し、当該箇所にクラックが発
生し、半導体装置に損傷を与えていた。
By the way, resin generally has a hygroscopic property, and moisture easily penetrates from the interface with the lead part such as the internal lead part, and the moisture is immersed in the solder bath when the external lead part is coated with solder. Evaporation and expansion when going through a heating process such as
There is a problem that the interface between the lead frame and the resin is peeled off. Particularly, in recent years, the semiconductor element 14 has been increasing in size, so that the area of the stage 12 has inevitably increased.
And a large pressure acts between them to cause cracks at the corresponding locations, thereby damaging the semiconductor device.

このため従来においては第4図のようにステージ部12
裏面に樹脂流入穴18を設けてステージ部12と樹脂16との
間の密着性を高めている。
For this reason, conventionally, as shown in FIG.
A resin inflow hole 18 is provided on the back surface to enhance the adhesion between the stage 12 and the resin 16.

(発明が解決しようとする問題点) 上記従来のリードフレームにあっては、ステージ部12
と樹脂16との間の接触面積が大きくなってそれだけ両者
間の密着力が高くなっており、また、ステージ部12と樹
脂16との熱膨張率の差による両者間の面方向のスリップ
(ずれ)も樹脂流入穴18によって防止されるのでそれだ
け剥離しにくくなっている。
(Problems to be Solved by the Invention) In the above conventional lead frame, the stage 12
The contact area between the resin and the resin 16 has increased, and the adhesion between them has increased accordingly. In addition, the slip in the surface direction between the stage section 12 and the resin 16 due to the difference in the coefficient of thermal expansion between the two has increased. ) Is also prevented by the resin inflow hole 18, so that it is difficult to peel off.

しかしながら、上記水分の気化膨張による大きな圧力
は、ステージ部12裏面と樹脂16との界面に垂直な方向に
作用するものであるため、上記の樹脂流入穴18では上記
方向の圧力に抗し得ず、両者間に剥離が生じるという問
題点が完全には解決されていない。
However, since the large pressure due to the vaporization and expansion of the water acts in a direction perpendicular to the interface between the back surface of the stage portion 12 and the resin 16, the resin inflow hole 18 cannot withstand the pressure in the above direction. However, the problem of peeling between the two has not been completely solved.

特に前記したようにステージ部12が益々大型化してい
く傾向にあるので、上記の水蒸気からの圧力も大きくな
るし、また一方では装置全体の小型化、すなわち樹脂封
止部の小型化、したがって樹脂16の薄肉化が進行してい
ることも両者間に剥離やクラックを生じさせる原因とな
っている。
In particular, as described above, the stage section 12 tends to become larger and larger, so that the pressure from the water vapor also increases, and on the other hand, the entire apparatus is reduced in size, that is, the resin sealing section is reduced in size, and therefore The progress of thinning of 16 also causes peeling and cracking between them.

さらには、ワイヤボンディング性を考慮して、ステー
ジ部12は搭載される半導体素子14上面と内部リード部上
面とが同位置になるように、内部リード部の面より一段
低くなるように設けられているので、ステージ部12裏面
側の樹脂16は他の部位よりもさらに薄くなっていること
も両者間の剥離、あるいは樹脂16のクラック発生をさら
に進行させる原因となっている。
Further, in consideration of the wire bonding property, the stage portion 12 is provided so as to be one step lower than the surface of the internal lead portion so that the upper surface of the semiconductor element 14 to be mounted and the upper surface of the internal lead portion are at the same position. Therefore, the resin 16 on the back surface side of the stage portion 12 is thinner than other portions, which also causes separation between the two or cracks in the resin 16 to further progress.

そこで本発明は上記問題点を解決すべくなされたもの
で、その目的とするところは、特にステージ部裏面と樹
脂間の剥離を有効に防止し得るリードフレームを提供す
るにある。
SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a lead frame capable of effectively preventing peeling between a resin on a back surface of a stage portion and a resin.

(課題を解決するための手段) 上記目的による本発明では、樹脂封止型半導体装置に
用いるリードフレームにおいて、半導体素子を搭載する
ステージ部裏面に樹脂流入穴が形成され、該樹脂流入穴
の開口端縁部が対向して潰されていると共に、前記樹脂
流入穴の開口の内方に突出する突出部が前記開口の周方
向に等間隔に形成されていることを特徴としている。
(Means for Solving the Problems) In the present invention according to the above object, in a lead frame used for a resin-encapsulated semiconductor device, a resin inflow hole is formed on the back surface of a stage portion on which a semiconductor element is mounted, and the opening of the resin inflow hole is formed. It is characterized in that the end portions are crushed facing each other, and projecting portions projecting inward of the opening of the resin inflow hole are formed at equal intervals in the circumferential direction of the opening.

(作用) ステージ部裏面に、開口端縁部が対向して潰されて開
口の周方向に等間隔に開口の内方に突出する突出部を有
する樹脂流入穴が設けられているので、樹脂封止した際
樹脂が該樹脂流入穴に流れ込んで開口の周方向に等間隔
に各独立した突出部が樹脂に食い込んだ状態となり、は
んだ浴中等に浸漬されて樹脂中に浸透した水分が気化膨
張してステージ部裏面と樹脂との界面に垂直な方向に力
が作用しても、あるいは何らかの原因で樹脂流入穴の軸
線を中心とする捩れの方向に力を作用しても各独立した
突出部が抵抗として働き、両者間に剥離やクラックが生
じず、したがって信頼性の高い半導体装置を提供でき
る。
(Operation) Since a resin inflow hole is provided on the back surface of the stage portion, the opening edge portion of which is crushed facing each other and has a protruding portion protruding inward of the opening at equal intervals in the circumferential direction of the opening. When the resin is stopped, the resin flows into the resin inflow hole, and the independent protrusions are cut into the resin at equal intervals in the circumferential direction of the opening. Even if force is applied in the direction perpendicular to the interface between the back of the stage and the resin, or if force is applied for some reason in the direction of twist around the axis of the resin inflow hole, each independent projection will The semiconductor device functions as a resistor, does not cause separation or crack between the two, and can provide a highly reliable semiconductor device.

また、突出部形成の際、開口端縁部を等間隔でプレス
加工するので、応力が分散し、ステージ部に歪のないリ
ードフレームを提供できる。
In addition, when forming the protruding portion, since the opening edges are pressed at equal intervals, stress can be dispersed and a lead frame having no distortion in the stage portion can be provided.

(実施例) 以下では本発明の好適な一実施例を添付図面に基づい
て詳細に説明する。
Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

第1図はリードフレーム10の一例を示す平面図であ
る。
FIG. 1 is a plan view showing an example of the lead frame 10. FIG.

図において20、20はレール部、22は外部リード部、24
は内部リード部、26はダムバーである。
In the figure, 20 and 20 are rails, 22 is an external lead, 24
Is an internal lead, and 26 is a dam bar.

12は半導体素子が搭載されるステージ部であり、ステ
ージサポートバー28によってレール部20、20に支持され
ている。
Reference numeral 12 denotes a stage on which a semiconductor element is mounted, and is supported by the rails 20 and 20 by a stage support bar 28.

ステージ部12はステージサポートバー28の中途部が屈
曲されていることによって、その上面が内部リード部24
上面から一段低くなるように設けられている。
The upper surface of the stage portion 12 is bent by the middle portion of the stage support bar 28 so that the inner lead portion 24 is formed.
It is provided so as to be one step lower from the upper surface.

ステージ部12裏面には第2図(c)に示すような断面
形状の樹脂流入穴18が多数設けられている。この樹脂流
入穴18は、その開口に周方向に等間隔で開口の内方に向
けて突出する4個の突出部30が形成されていて、入口側
よりも奥側の方が広くなるような形状に形成されてい
る。
A large number of resin inflow holes 18 having a cross-sectional shape as shown in FIG. This resin inflow hole 18 is formed at its opening with four protrusions 30 protruding toward the inside of the opening at equal intervals in the circumferential direction, so that the back side is wider than the inlet side. It is formed in a shape.

このような断面形状の樹脂流入穴18を形成するには、
まずプレス加工あるいはエッチング加工によりステージ
部12裏面に第2図(a)に示すようなストレート穴を形
成し、次いでこのストレート穴の開口端縁部を等間隔で
4箇所においてプレス加工によって潰すことによって、
肉を内方に突出させ、これにより突起状に内方に突出す
る4個の突出部30を形成することができる。
In order to form the resin inflow hole 18 having such a cross-sectional shape,
First, a straight hole as shown in FIG. 2A is formed on the back surface of the stage portion 12 by pressing or etching, and then the edges of the opening of the straight hole are crushed at equal intervals at four places by pressing. ,
The meat can be made to project inward, so that four projections 30 projecting inward in a projecting manner can be formed.

樹脂流入穴18は、リードフレーム10の他の部位のプレ
ス加工、あるいはエッチング加工と同一の工程で同時あ
るいは順次に加工することができる。
The resin inflow hole 18 can be formed simultaneously or sequentially in the same step as pressing or etching other parts of the lead frame 10.

上記のリードフレーム10のステージ部12上に半導体素
子14を接合し、内部リード部24との間に必要なワイヤボ
ンディング等を施し、半導体素子14、内部リード部24等
を樹脂16で封止することによって半導体装置を得ること
ができる。
The semiconductor element 14 is bonded onto the stage 12 of the lead frame 10, necessary wire bonding is performed between the semiconductor element 14 and the internal lead 24, and the semiconductor element 14, the internal lead 24, and the like are sealed with the resin 16. Thus, a semiconductor device can be obtained.

その際樹脂16はステージ部12裏面の樹脂流入穴18内に
も流入して固化する。したがって樹脂流入穴18開口端縁
部に形成されている突出部30が樹脂16中に食い込んだ状
態になるので、ステージ部12と樹脂16との界面に垂直な
方向の力が作用しても突出部30が抵抗となって両者間の
剥離が防止される。
At this time, the resin 16 also flows into the resin inflow hole 18 on the back surface of the stage portion 12 and solidifies. Therefore, since the protruding portion 30 formed at the edge of the opening of the resin inflow hole 18 is cut into the resin 16, the protruding portion 30 protrudes even when a force in a direction perpendicular to the interface between the stage portion 12 and the resin 16 acts. The portion 30 serves as a resistor, and separation between them is prevented.

また、突出部40は開口端縁部の4箇所でそれぞれ樹脂
中に食い込むので、単に開口端縁部の全周に亙って内方
に突出するフランジ状の突出部よりも、樹脂に対する食
いつき力が大きく、界面に垂直な方向の力が作用した場
合のみならず、あらゆる方向、例えば樹脂流入穴18の軸
線を中心とする捩れの方向に力が作用しても各独立した
突出部30が抵抗となるので、ステージ部12と樹脂16との
間の剥離がほぼ完全に防止されるのである。
Further, since the projecting portions 40 bite into the resin at the four positions of the opening edge, respectively, the biting force on the resin is smaller than that of the flange-shaped projecting portion projecting inward over the entire periphery of the opening edge. Each independent protrusion 30 resists not only when a force acts in a direction perpendicular to the interface but also in any direction, for example, in a direction of twist around the axis of the resin inflow hole 18. Therefore, the separation between the stage portion 12 and the resin 16 is almost completely prevented.

さらに上記のように、開口端縁部の周辺全周に亙って
プレス加工によって潰してフランジ状の突出部を形成す
ることも考えられるが、この場合にはプレス加工のエリ
アが広くなり、歪みが滞有しやすく、ステージ部12に反
り等を発生させる要因となりやすい。
Further, as described above, it is conceivable to form a flange-shaped projection by crushing the entire periphery of the periphery of the opening edge by pressing, but in this case, the area of the pressing becomes large, and the distortion is increased. Is liable to stagnate, and is likely to cause warpage or the like in the stage section 12.

この点、開口端縁部のうち対向する部位をプレス加工
で潰す場合には、プレス加工のエリアも小さくなく、開
口内方への肉の逃げが容易となり、また等間隔をおいて
潰すことによって応力も分散するのでステージ部12の反
り等の発生も防止できる。
In this regard, when the opposing portions of the opening edge are crushed by press working, the area of the press working is not small, and the escape of meat into the opening becomes easy, and by crushing at equal intervals, Since the stress is also dispersed, it is possible to prevent the stage section 12 from warping or the like.

なお、樹脂流入穴18をステージ部12裏面にのみ設けた
が、内部リード部24等にも設けてもよい。特に内部リー
ド部24の樹脂封止境界部付近に樹脂流入穴を設けること
によって、内部リード部24表面と樹脂との境界に沿って
浸透する水分の進入を防止することができる。
Although the resin inlet hole 18 is provided only on the back surface of the stage section 12, it may be provided on the internal lead section 24 and the like. In particular, by providing a resin inflow hole near the resin sealing boundary portion of the internal lead portion 24, it is possible to prevent entry of moisture penetrating along the boundary between the surface of the internal lead portion 24 and the resin.

以上、以上本発明につき好適な実施例を挙げて種々説
明したが、本発明はこの実施例に限定されるものではな
く、発明の精神を逸脱しない範囲内で多くの改変を施し
得るのはもちろんである。
As described above, the present invention has been described variously with reference to preferred embodiments. However, the present invention is not limited to the embodiments, and it is needless to say that many modifications can be made without departing from the spirit of the invention. It is.

(発明の効果) 以上のように本発明によれば、ステージ部裏面に、開
口端縁部に周方向に等間隔をおいて開口の内方に突出す
る突出部を有する樹脂流入穴が設けられているので、樹
脂封止した際樹脂が該樹脂流入穴に流れ込んで各独立し
た突出部が樹脂に食い込んだ状態となり、はんだ浴中等
に浸漬されて樹脂中に浸透した水分が気化膨張してステ
ージ部裏面と樹脂との界面に垂直な方向に力が作用して
も、あるいは何らかの原因で樹脂流入穴の軸線を中心と
する捩れの方向に力が作用しても各独立した突出部が抵
抗として働き、両者間に剥離やクラックが生じず、した
がって信頼性の高い半導体装置を提供できる。
(Effect of the Invention) As described above, according to the present invention, on the back surface of the stage, a resin inflow hole having a protruding portion protruding inward of the opening is provided at the edge of the opening at equal intervals in the circumferential direction. Therefore, when the resin is sealed, the resin flows into the resin inflow hole, and each independent protrusion is in a state of biting into the resin. Even if force acts in the direction perpendicular to the interface between the resin back surface and the resin, or if force acts in the direction of torsion around the axis of the resin inflow hole for some reason, each independent protrusion acts as a resistance. The semiconductor device does not peel off or crack between the two, so that a highly reliable semiconductor device can be provided.

また、突出部形成の際、開口端縁部のうち対向する部
位を等間隔でプレス加工するので、応力が分散し、ステ
ージ部に歪のないリードフレームを提供できる。
Further, when forming the protruding portion, the opposing portions of the opening edge are pressed at equal intervals, so that stress can be dispersed and a lead frame having no distortion in the stage portion can be provided.

【図面の簡単な説明】[Brief description of the drawings]

第1図はリードフレームの平面図、第2図は樹脂流入穴
を形成する工程を示す説明図、第3図は半導体装置の断
面図、第4図は従来の樹脂流入穴の形状を示す説明図で
ある。 10……リードフレーム、12……ステージ部、14……半導
体素子、16……樹脂、18……樹脂流入穴、20……レール
部、22……外部リード部、24……内部リード部、26……
ダムバー、28……ステージサポートバー、30……突出
部。
FIG. 1 is a plan view of a lead frame, FIG. 2 is an explanatory view showing a step of forming a resin inflow hole, FIG. 3 is a cross-sectional view of a semiconductor device, and FIG. FIG. 10 lead frame, 12 stage part, 14 semiconductor element, 16 resin, 18 resin inflow hole, 20 rail part, 22 external lead part, 24 internal lead part, 26 ……
Dam bar, 28 ... Stage support bar, 30 ... Projection.

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】樹脂封止型半導体装置に用いるリードフレ
ームにおいて、 半導体素子を搭載するステージ部裏面に樹脂流入穴が形
成され、該樹脂流入穴の開口端縁部が対向して潰されて
いると共に、前記樹脂流入穴の開口の内方に突出する突
出部が前記開口の周方向に等間隔に形成されていること
を特徴とするリードフレーム。
1. A lead frame used in a resin-sealed semiconductor device, wherein a resin inflow hole is formed on a back surface of a stage on which a semiconductor element is mounted, and an opening edge of the resin inflow hole is crushed to face. A lead frame, wherein protrusions projecting inward of the opening of the resin inflow hole are formed at equal intervals in a circumferential direction of the opening.
【請求項2】前記突出部が4箇所形成されていることを
特徴とするリードフレーム。
2. The lead frame according to claim 1, wherein said protrusion is formed at four places.
JP63106738A 1988-04-29 1988-04-29 Lead frame Expired - Lifetime JP2593912B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP63106738A JP2593912B2 (en) 1988-04-29 1988-04-29 Lead frame
KR1019890005547A KR890016660A (en) 1988-04-29 1989-04-27 Leadframe

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63106738A JP2593912B2 (en) 1988-04-29 1988-04-29 Lead frame

Publications (2)

Publication Number Publication Date
JPH01278055A JPH01278055A (en) 1989-11-08
JP2593912B2 true JP2593912B2 (en) 1997-03-26

Family

ID=14441266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63106738A Expired - Lifetime JP2593912B2 (en) 1988-04-29 1988-04-29 Lead frame

Country Status (2)

Country Link
JP (1) JP2593912B2 (en)
KR (1) KR890016660A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0575006A (en) * 1991-09-18 1993-03-26 Fujitsu Ltd Lead frame and resin sealed semiconductor device
US5293065A (en) * 1992-08-27 1994-03-08 Texas Instruments, Incorporated Lead frame having an outlet with a larger cross sectional area than the inlet

Also Published As

Publication number Publication date
JPH01278055A (en) 1989-11-08
KR890016660A (en) 1989-11-29

Similar Documents

Publication Publication Date Title
JP2593912B2 (en) Lead frame
JPS5827352A (en) Semiconductor device
US5142450A (en) Non-contact lead design and package
JP2694871B2 (en) Semiconductor device
JPH03161958A (en) Structure of plastic pin grid array type semiconductor package
KR960000940Y1 (en) Lead on chip package
JP2562789B2 (en) Heat sink for semiconductor device
JPS6223096Y2 (en)
JPH06252318A (en) Semiconductor device and manufacture thereof
JPH05308083A (en) Semiconductor device
JPS6228760Y2 (en)
JPH0758267A (en) Lead frame
JP2749124B2 (en) Lead frame
JPH0669381A (en) Semiconductor integrated circuit device
JPH02133951A (en) Resin-sealed type semiconductor device
JPH03159163A (en) Lead frame
JPS5827347A (en) Semiconductor device
JPH0365023B2 (en)
JPH06244335A (en) Resin-sealed semiconductor device
JPH05129512A (en) Lead frame
JPH0590946U (en) Resin-sealed semiconductor device
JPH02292849A (en) Lead frame
JPH0621272A (en) Semiconductor
JPH1140704A (en) Semiconductor device
JPH06151644A (en) Resin sealed semiconductor device