JP2544845B2 - Magnetic thin film, laminate, magnetic recording head, magnetic shield, and method for producing laminate - Google Patents

Magnetic thin film, laminate, magnetic recording head, magnetic shield, and method for producing laminate

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Publication number
JP2544845B2
JP2544845B2 JP3162301A JP16230191A JP2544845B2 JP 2544845 B2 JP2544845 B2 JP 2544845B2 JP 3162301 A JP3162301 A JP 3162301A JP 16230191 A JP16230191 A JP 16230191A JP 2544845 B2 JP2544845 B2 JP 2544845B2
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Japan
Prior art keywords
magnetic
thin film
alloy
laminate
magnetic thin
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Expired - Lifetime
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JP3162301A
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JPH065423A (en
Inventor
パナヨテイス・コンスタンテイノウ・アンドリカコス
ジエイ−ウエイ・チヤン
ウイルマ・ジーン・ホーカンス
ジユーデイス・ダイアン・オルセン
ボーヤン・ペテク
ルボミル・タラス・ロマンキウ
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
    • H01F41/26—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids using electric currents, e.g. electroplating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H01F10/30—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the intermediate layers, e.g. seed, buffer, template, diffusion preventing, cap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H05K9/0073—Shielding materials
    • H05K9/0075—Magnetic shielding materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/90—Magnetic feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/115—Magnetic layer composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12778—Alternative base metals from diverse categories
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y10T428/1291—Next to Co-, Cu-, or Ni-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y10T428/12917—Next to Fe-base component

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、薄膜の形態で、磁気記
録ヘッド、磁束ガイド及び遮蔽体において磁性薄膜とし
て有用なものとする電磁気特性の独特な組合せを有する
コバルト、鉄及び銅（ＣｏＦｅＣｕ）のある種の合金に
関する。本発明は、薄膜形態のこの合金を製造すること
ができる新規なめっき法及びめっき浴にも関する。This invention relates to cobalt, iron and copper (CoFeCu) having a unique combination of electromagnetic properties that make them useful as magnetic thin films in magnetic recording heads, flux guides and shields in the form of thin films. Of certain alloys of The invention also relates to a new plating method and plating bath capable of producing this alloy in thin film form.

【０００２】[0002]

【従来の技術】電子コンピューターディスク記憶系にお
いて現在進行している次第に高くなる線形ビット密度に
向けての需要によって増大した飽和保磁力を持つ磁気記
憶媒体が使用されるに至っている。同時に、より速い電
子データ転送速度に向う現在の傾向によって、上記の目
的のため上記の媒体中使用される磁気記録ヘッドの高周
波性能の着実な上昇が要求されている。BACKGROUND OF THE INVENTION Magnetic storage media with increased coercivity have been used due to the ongoing demand for ever increasing linear bit densities in electronic computer disk storage systems. At the same time, the current trend towards higher electronic data transfer rates requires a steady increase in the high frequency performance of magnetic recording heads used in the above media for the above purposes.

【０００３】その結果、より高速でより大きな「書き込
み」（write）の場を得ることができる誘導又は磁気記
録ヘッドがいつも必要とされる。この必要性に応えるた
めには、現在使用されている薄膜材料において利用され
るものより有意に高い飽和磁化（４πＭs）を有する磁
性薄膜を提供することが必要である。現在最も使用され
ている磁性薄膜材料は、Permalloy として広く知られて
いるニッケル−鉄合金（ＮｉＦｅ）であり、このものは
約９,５００〜１０,０００ガウスの飽和磁化を有してい
る。As a result, there is always a need for inductive or magnetic recording heads that can obtain faster and larger "write" fields. To meet this need, it is necessary to provide magnetic thin films that have significantly higher saturation magnetization (4πM s ) than that utilized in currently used thin film materials. The currently most used magnetic thin film material is the nickel-iron alloy (NiFe), commonly known as Permalloy, which has a saturation magnetization of about 9,500 to 10,000 Gauss.

【０００４】より高い飽和磁化を有する磁性薄膜を使用
すれば２つの主な利点が生じる。記録ヘッド中このよう
な材料を使用すると、記録ヘッドは、それに比例して高
い飽和保磁力を持つ記録媒体に書き込むことができるの
で、より高い線形密度も達成することができる。更に、
このような材料を使用することによって、より薄い記録
ヘッド磁極端の使用が可能となり、それによってその厚
さの平方と逆の関係の周波数応答を拡大する。より薄い
磁性膜の使用は又、その製造法を簡略化する可能性もあ
る。更に、磁気記録ヘッドが記憶されたデータを読み取
ることにも使用される適用において、このような適用の
ため次第にせまくなる磁極端の使用（より高いトラック
密度を達成するため）は、記録ヘッド装置のストレス誘
導磁気異方性を小さくするため、又薄膜材料中エッジド
メインの大きさを磁極端自体の大きさより有意に小さく
するために、Permalloy より有意に高い固有異方性磁界
を有する磁性薄膜材料の使用を必要とする。Permalloy
の固有異方性磁界は約３〜６エルステッドである。磁極
端が薄くなると読み取りの間分解能は高くなり、そして
隣接ビットからの干渉は小さくなる。The use of magnetic thin films with higher saturation magnetization has two main advantages. The use of such materials in the recording head allows the recording head to write to recording media with proportionally high coercivity, and thus higher linear densities can also be achieved. Furthermore,
The use of such a material allows the use of thinner write head pole tips, thereby expanding the frequency response inversely related to the square of its thickness. The use of thinner magnetic films may also simplify the manufacturing process. Furthermore, in applications where the magnetic recording head is also used to read stored data, the use of progressively less stiff pole tips for such applications (to achieve higher track density) is In order to reduce the stress-induced magnetic anisotropy and to make the size of the edge domain in the thin film material significantly smaller than the size of the pole tip itself, the magnetic thin film material having an intrinsic anisotropy field significantly higher than that of Permalloy is used. Need use. Permalloy
Has an intrinsic anisotropy field of about 3-6 Oersted. The thinner pole tip provides higher resolution during reading and less interference from adjacent bits.

【０００５】米国特許３,４８０,５２２号（Brownlow）
は、Ｃｕ含量が多い非磁性ＮｉＦｅ合金とＣｕの率が低
い磁気ＮｉＦｅ合金とのラミネートからつくられる磁性
薄膜を開示している。US Pat. No. 3,480,522 (Brownlow)
Discloses a magnetic thin film made from a laminate of a non-magnetic NiFe alloy having a high Cu content and a magnetic NiFe alloy having a low Cu content.

【０００６】米国特許４,１０８,７３９号（Tadokoro
ら）は、非磁性めっき膜と強磁性めっき膜との交互の層
の薄膜ラミネートの電気めっきによる形成を開示してい
る。このめっき浴は、合金中に組み入れられる燐の存在
を要求する。US Pat. No. 4,108,739 (Tadokoro
Et al.) Discloses electroplating a thin film laminate of alternating layers of non-magnetic and ferromagnetic plated films. This plating bath requires the presence of phosphorus incorporated into the alloy.

【０００７】米国特許４,６５２,３４８号（Yahalom
ら）は、高い弾性率及び改善された磁気特性を有する合
金の電着による製造を開示している。電着される金属の
例は、銅−ニッケル、銅−パラジウム、ニッケル−金、
銅−ニッケル−鉄及びニッケルをコバルト又は鉄に置換
えた対応する合金である。しかし企図されているＣｕＮ
ｉＣｏ合金は比較的高いＣｕ含量を有している。更に、
いわゆる合金は、使用される各金属が使用される金属全
部の真の合金ではなく、実質的に純粋な形態で別々に沈
着されているように明らかに形成されている。US Pat. No. 4,652,348 (Yahalom
Et al.) Discloses the electrodeposition production of alloys with high elastic modulus and improved magnetic properties. Examples of metals that are electrodeposited are copper-nickel, copper-palladium, nickel-gold,
Copper-nickel-iron and corresponding alloys with nickel replaced by cobalt or iron. But CuN is being planned
The iCo alloy has a relatively high Cu content. Furthermore,
So-called alloys are clearly formed such that each metal used is not a true alloy of all the metals used, but is deposited separately in a substantially pure form.

【０００８】L.T. Romankiw ら（Extended Abstracts o
f the Electrochemical Society,ＡＢＳ＃３００，８９
巻，４３０〜４３１頁，１９８９）は、誘導記録ヘッド
及び磁気遮蔽体のため、単一めっき溶液からの積層型磁
性及び非磁性ＣｕＮｉＦｅ膜の電気めっきを開示してい
る。磁性層は、約５％のＣｕ、並びに残りは４：１の比
のＮｉ及びＦｅである。非磁性層は９５％のＣｕ及び５
％のＮｉＦｅである。LT Romankiw et al. (Extended Abstracts o
f the Electrochemical Society, ABS # 300, 89
Vol. 430-431, 1989) discloses electroplating laminated magnetic and non-magnetic CuNiFe films from a single plating solution for inductive recording heads and magnetic shields. The magnetic layer is about 5% Cu, with the balance being a 4: 1 ratio of Ni and Fe. Non-magnetic layer is 95% Cu and 5
% NiFe.

【０００９】J.C. Slonczewski ら（IEEE Transactions
on Magnetics, ２４巻，３号，１９８８年５月）は、
積層型 Permalloy 膜の「マイクロマグネチックス」を
開示している。JC Slonczewski et al. (IEEE Transactions
on Magnetics, Vol. 24, No. 3, May 1988)
Disclosed is the "micromagnetics" of stacked Permalloy films.

【００１０】D.V. Subrahmanyam ら（Electroplating a
nd Metal Finishing，１９６７年２月，４４頁）は、ピ
ロ燐酸浴からのＣｕ及びＣｏの電着を開示している。DV Subrahmanyam et al. (Electroplating a
nd Metal Finishing, February 1967, p. 44) discloses electrodeposition of Cu and Co from pyrophosphoric acid baths.

【００１１】M. Sarojamma ら（Plating, １９７８年６
月，６１９頁）は、ピロ燐酸浴からのＣｏＮｉＣｕ合金
の電着を開示している。M. Sarojamma et al. (Plating, 1978 6
Moon, page 619) discloses the electrodeposition of CoNiCu alloys from pyrophosphoric acid baths.

【００１２】米国特許４,７５６,８１６号（Liao ら）
は、きわめて高いコバルト含量を有する二元ＣｏＦｅ合
金膜の製造を開示している。US Pat. No. 4,756,816 (Liao et al.)
Discloses the production of binary CoFe alloy films with extremely high cobalt content.

【００１３】[0013]

【発明が解決しようとする課題】本発明の目的は、非磁
性膜薄板との薄膜ラミネート形態の電磁気特性の独特な
組合せを有するコバルト、鉄及び銅の合金を提供するこ
とである。It is an object of the present invention to provide a cobalt, iron and copper alloy having a unique combination of electromagnetic properties in the form of a thin film laminate with a non-magnetic film sheet.

【００１４】更に本発明の目的は、電磁気特性の独特な
組合せを有するコバルト、鉄及び銅の磁性薄膜合金を提
供することである。It is a further object of the present invention to provide magnetic thin film alloys of cobalt, iron and copper having a unique combination of electromagnetic properties.

【００１５】更に本発明の目的は、薄膜ラミネートの形
態で、磁気記録ヘッド及び遮蔽板において磁性薄膜とし
て有用である上記の合金を提供することである。It is a further object of the present invention to provide the above alloys which are useful as magnetic thin films in magnetic recording heads and shields in the form of thin film laminates.

【００１６】更に本発明の目的は、上記の磁性薄膜を用
いる新規な磁気記録ヘッドを提供することである。A further object of the present invention is to provide a new magnetic recording head using the above magnetic thin film.

【００１７】更に本発明の目的は、上記の合金及び上記
の薄膜ラミネートを得るための新規な電気めっき浴及び
方法を提供することである。It is a further object of the present invention to provide new electroplating baths and methods for obtaining the above alloys and the above thin film laminates.

【００１８】[0018]

【課題を解決するための手段】本発明の目的は、下に開
示されるめっき浴系を使用してＤＣめっきされるコバル
ト、鉄及び銅のある種の薄膜合金、並びにパルス電流に
よってめっきされる上記の合金及び他の非磁性ラミナの
薄膜ラミネートを得ることによって達成される。SUMMARY OF THE INVENTION It is an object of the present invention to DC-plate certain cobalt, iron and copper thin film alloys using the plating bath systems disclosed below, and to pulse current plating. This is accomplished by obtaining a thin film laminate of the above alloys and other non-magnetic lamina.

【００１９】本発明の合金は、組成ＣｏxＦｅyＣｕ
z（ただしｘ、ｙ及びｚは、それぞれ上記の合金中に存
在するＣｏ、Ｆｅ及びＣｕの重量％を表わす）を有し、
そしてｘは約６６〜９２、好ましくは約７３〜８９、そ
して最も好ましくは７４〜８７であり、ｙは約６〜１
４、好ましくは約８〜１３、そして最も好ましくは約９
〜１２であり、そしてｚは約２〜２０、好ましくは約３
〜１４、そして最も好ましくは約４〜１４である。The alloy of the present invention has the composition Co x Fe y Cu
z, where x, y and z represent the weight percentages of Co, Fe and Cu present in the alloy, respectively,
And x is about 66-92, preferably about 73-89, and most preferably 74-87, and y is about 6-1.
4, preferably about 8-13, and most preferably about 9
Is about 12 and z is about 2-20, preferably about 3
-14, and most preferably about 4-14.

【００２０】元素状の酸素、炭素、硫黄その他の成分の
１種又はそれ以上のあるマイナーな量を、それらが膜の
磁気特性に悪影響を及ぼさない（その飽和保磁力を増大
させず、異方性磁界の損失又は飽和磁化の過度の損失を
招かない）かぎり合金が含有していてよい。Certain minor amounts of one or more of elemental oxygen, carbon, sulfur and other components do not adversely affect the magnetic properties of the film (do not increase its coercivity, The alloy may be contained as long as it does not cause the loss of the magnetic field or the excessive loss of the saturation magnetization.

【００２１】積層されていない形態においては、本発明
の合金の厚さは約５００〜５０,０００Åである。In the non-laminated form, the alloy of the present invention has a thickness of about 500 to 50,000 liters.

【００２２】積層された形態においては、本発明の目的
のためには、又下に更に詳述されるとおり、合金は好ま
しくは、各々厚さ約５００〜１０,０００オングストロ
ーム単位（Å）である磁性層の形態で製造される。それ
らは好ましくは、後述されるとおり、非磁性ラミナとの
ラミネートの形態でも製造される。非磁性ラミナは、各
々厚さ約５〜５００Åであり、非磁性材料として、銅単
独の層、又は大部分が銅で根跡、約５重量％未満のコバ
ルトより構成される層である。In laminated form, for the purposes of the present invention, and as further detailed below, the alloys are preferably each about 500 to 10,000 Angstrom units (Å) thick. It is manufactured in the form of a magnetic layer. They are preferably also manufactured in the form of a laminate with a non-magnetic lamina, as described below. The non-magnetic lamina has a thickness of about 5 to 500 Å, and is a layer of copper alone as a non-magnetic material, or a layer mainly composed of copper and containing less than about 5% by weight of cobalt.

【００２３】得られたラミネートは、ｎの磁性ラミナの
層及びｎ−１の非磁性ラミナの層（ただしｎは２〜５０
の範囲のいずれかの偶数である）よりなる。ラミネート
は約０.１〜５ミクロンの全体の厚さを有する。The resulting laminate has a layer of n magnetic lamina and a layer of n-1 non-magnetic lamina, where n is 2-50.
Is an even number in the range). The laminate has a total thickness of about 0.1-5 microns.

【００２４】本発明の合金は、前記の合金の薄膜の形態
であり、次の電磁気特性を有する: 約１６,０００〜２４,０００、そして好ましくは約１
８,０００〜２０,０００ガウスの飽和磁化、 約１１〜２０エルステッド（Ｏｅ）、そして好ましくは
約１５〜１８エルステッドの異方性磁界、 約≦１.５エルステッド、そして好ましくは１エルステ
ッド未満、又最も好ましくは約０.１〜０.８エルステッ
ドの飽和保磁力値及び 約＋１０-4〜−１０-4、そして好ましくは約＋１０-5〜
−１０-4の磁歪値。The alloys of the present invention are in the form of thin films of the above alloys and have the following electromagnetic properties: about 16,000 to 24,000, and preferably about 1.
A saturation magnetization of 8,000 to 20,000 Gauss, an anisotropic magnetic field of about 11 to 20 Oersteds (Oe), and preferably about 15 to 18 Oersteds, about ≤1.5 Oersteds, and preferably less than 1 Oersteds, and Most preferably a coercivity value of about 0.1 to 0.8 Oersteds and about +10 -4 to -10 -4 , and preferably about +10 -5 to.
Magnetostriction value of -10 -4 .

【００２５】本発明者らが知るかぎり、個々に又は組み
合せて、本発明の合金又は膜によって提供される次の電
磁気特性を有するＣｏ、Ｆｅその他の元素の磁性薄膜を
提供したものは従来なかった：約１６,０００〜２４,０
００の飽和磁化、１エルステッド未満の飽和保磁力値及
び約１１〜２０の異方性磁界。To the best of our knowledge, no one has individually or in combination provided magnetic thin films of Co, Fe or other elements having the following electromagnetic properties provided by the alloys or films of the present invention. : About 16,000 to 24.0
A saturation magnetization of 00, a coercivity value of less than 1 Oersted and an anisotropic magnetic field of about 11-20.

【００２６】本発明の磁性薄膜が磁気記録ヘッド中使用
されるときには、ヘッドは厚さがわずか約０.１〜５.０
ミクロンである磁極端を用いてつくられる。When the magnetic thin film of the present invention is used in a magnetic recording head, the head has a thickness of only about 0.1 to 5.0.
Made with pole tips that are micron.

【００２７】〔合金及びフィルムの製造〕本発明のＣｏ
ＦｅＣｕ合金は、ＤＣ又はパルス電流電着法を使用して
単一の新規な水性めっき溶液から製造される。これら合
金は好ましくは、薄膜又は上述した非磁性ラミナとの薄
膜ラミネートの形態で上記の溶液から製造される。[Production of Alloy and Film] Co of the present invention
FeCu alloys are manufactured from a single novel aqueous plating solution using DC or pulsed current electrodeposition. These alloys are preferably made from the above solutions in the form of thin films or thin film laminates with the non-magnetic lamina described above.

【００２８】Ｃｏ、Ｆｅ及びＣｕイオンは、めっき溶液
又は浴に、好ましくは可溶性硫酸塩、酢酸塩、スルホン
酸塩、酒石酸塩、クエン酸塩の形態、又はいずれかの他
の適当なイオン形態で供給される。The Co, Fe and Cu ions are incorporated into the plating solution or bath, preferably in the form of soluble sulfates, acetates, sulfonates, tartrates, citrates, or any other suitable ionic form. Supplied.

【００２９】Ｃｏ、Ｆｅ及びＣｕイオンの外に、本発明
のめっき浴又は溶液は、１種又はそれ以上の水溶性緩衝
剤、例えば酢酸塩、クエン酸塩、酒石酸塩、スルホン酸
塩、マロン酸塩、又は同様な剤（ただし緩衝剤中陽イオ
ンは好ましくはＮａ又はＫである）、１種又はそれ以上
の水溶性界面活性剤、例えばＦＣ−９５、Triton Ｘ−
１００、ラウリル硫酸ナトリウム、又はいずれかの同様
な界面活性剤、１種又はそれ以上の水溶性応力減少剤
（stress reducer）、例えばサッカリン又は同様なもの
の水溶性の塩及び１種又はそれ以上の水溶性伝導性塩、
例えば硫酸ナトリウム又は同様な塩を含有することがあ
る。In addition to Co, Fe and Cu ions, the plating bath or solution of the present invention comprises one or more water-soluble buffering agents such as acetates, citrates, tartrates, sulfonates, malonic acid. Salts, or similar agents, where the cation in the buffer is preferably Na or K, one or more water-soluble surfactants such as FC-95, Triton X-
100, sodium lauryl sulphate, or any similar surfactant, one or more water-soluble stress reducers, such as water-soluble salts of saccharin or the like and one or more water-soluble salts. Conductive salt,
For example, it may contain sodium sulfate or similar salts.

【００３０】浴の組成は次のとおり変動することにな
る：The composition of the bath will vary as follows:

【表１】 [Table 1]

【００３１】めっき浴は約２〜５、そして好ましくは約
２.５〜４の範囲のｐＨを有する。硫酸を使用して所望
のｐＨ値を得てよい。The plating bath has a pH in the range of about 2-5, and preferably about 2.5-4. Sulfuric acid may be used to obtain the desired pH value.

【００３２】浴中使用される水は、好ましくは蒸留また
は脱イオン水である。The water used in the bath is preferably distilled or deionized water.

【００３３】電着法は、好ましくは約２０〜３０℃の室
温において、又約４〜５０mA／cm2のカソード電流密度
において実施される。使用されるカソードは、好ましく
は、Ｎｉ80Ｆｅ20シード誘電性基材である。使用される
アノードは好ましくはＣｏである。The electrodeposition process is preferably carried out at room temperature of about 20-30 ° C. and at a cathode current density of about 4-50 mA / cm 2 . The cathode used is preferably a Ni 80 Fe 20 seeded dielectric substrate. The anode used is preferably Co.

【００３４】カソードにおけるＣｕ沈積反応が、熱力学
的に、Ｃｏ及びＦｅ沈積反応より有利であるという事実
により、得られる沈積した合金組成物のＣｕ濃度は、浴
の撹拌に、並びに溶液中Ｃｕ2+濃度及び電流密度に強く
左右される。即ち、本発明の電解質浴は、大きな面積
面、典型的には約８×８in2(約２０×２０cm2）又はそ
れよりはるかに大きい面にわたって均一な撹拌を与える
パドルを備えた電解槽中実施されるめっき法において使
用するのに最も適している（米国特許４,１０２,７５６
号−Castellani ら参照）。上記のパドル槽撹拌は、パ
ドル運動の振動数が約１ヘルツ（Hz）であるとき、回転
ディスク電極の２００〜７００rpmと均等である。均一
な組成及び厚さを持つ合金のめっきは、同様なレベルの
均一な撹拌を与えることができる他の型のめっき槽中で
行なうこともできる。均一でない撹拌であれば均一でな
い組成を持つ膜を生じることとなり、磁性装置のために
は望ましくないが、他の目的には望ましいことがある。Due to the fact that the Cu deposition reaction at the cathode is thermodynamically favored over the Co and Fe deposition reactions, the Cu concentration of the resulting deposited alloy composition depends on the stirring of the bath and on the Cu 2 in solution. + Strongly influenced by concentration and current density. That is, the electrolyte baths of the present invention are practiced in an electrolytic cell equipped with paddles that provide uniform agitation over large area surfaces, typically about 8 x 8 in 2 (about 20 x 20 cm 2 ) or much larger. Most suitable for use in the plating methods described (US Pat. No. 4,102,756).
Issue-See Castellani et al.). The paddle tank agitation described above is equivalent to 200-700 rpm of the rotating disk electrode when the frequency of the paddle motion is about 1 hertz (Hz). Plating of alloys of uniform composition and thickness can also be done in other types of plating baths that can provide similar levels of uniform agitation. Non-uniform agitation will result in a film with a non-uniform composition, which is not desirable for magnetic devices, but may be desirable for other purposes.

【００３５】沈積の間めっき槽全体に約１００〜１０,
０００ガウス、そして好ましくは５００〜３５００ガウ
スのレベルで連続して外部磁場をかける。Approximately 100 to 10 throughout the plating tank during deposition.
An external magnetic field is applied continuously at a level of 000 Gauss, and preferably 500-3500 Gauss.

【００３６】ＣｏＦｅＣｕめっきのために使用される、
上述したものと同じめっき溶液は、本発明によれば、磁
性膜と非磁性膜との交互の層から積層膜をつくるために
も使用することができる。磁性膜層は、本発明のＣｏＦ
ｅＣｕ合金の層よりなり、非磁性層は、純Ｃｕ又はＣｏ
の量が約５重量％未満であるＣｏＣｕ合金のものである
こととなる。これらのＣｏＦｅＣｕ−Ｃｕ又はＣｏＦｅ
Ｃｕ−ＣｏＣｕラミネートは、めっき電流を２つの値ｉ
ｈｉ及びｉＩＯの間でパルスさせることによってつくる
ことができる。これらの値は、それぞれ低Ｃｕ及び高Ｃ
ｕ層を表わす。Used for CoFeCu plating,
The same plating solution as described above can also be used according to the invention to make a laminated film from alternating layers of magnetic and non-magnetic films. The magnetic film layer is the CoF of the present invention.
eCu alloy layer, non-magnetic layer is pure Cu or Co
Of less than about 5% by weight of the CoCu alloy. These CoFeCu-Cu or CoFe
Cu-CoCu laminate has two values of plating current i
It can be created by pulsing between hi and i IO . These values are low Cu and high C, respectively.
Represents the u layer.

【００３７】ｉhiの値で電流を流している間、本発明の
ＣｏＦｅＣｕ磁性合金が析出めっきされる。ｉhiの大き
さは、磁性合金の所望の組成、浴の組成及び用いられる
撹拌の強さによってきまる。The CoFeCu magnetic alloy of the present invention is deposited and plated while a current is applied at a value of i hi . The magnitude of i hi depends on the desired composition of the magnetic alloy, the composition of the bath and the strength of the agitation used.

【００３８】即ち、固定した撹拌においてｉhiの値を上
げると、合金中Ｃｏ及びＦｅの濃度を増大させる方に働
らき、Ｃｏ、Ｆｅ及びＣｕイオンの濃度をそれぞれ増大
させると、合金中のそれぞれの元素の含量を増大させる
方に働らき、そして撹拌の強さを増大させると、合金中
Ｃｕの含量を増大させる方に働らく。That is, when the value of i hi is increased under fixed stirring, it works to increase the concentrations of Co and Fe in the alloy, and when the concentrations of Co, Fe and Cu ions are increased, respectively, it increases in the alloy. To increase the content of the element, and to increase the strength of the agitation, to increase the content of Cu in the alloy.

【００３９】ｉloの値で電流を流している間、非磁性Ｃ
ｕ又はＣｏＣｕ層が析出めっきされる。ｉlo値の大きさ
は、好ましくはＣｕ2+の拡散限定２電子還元電流密度
（diffusion limited two-electron reduction cirrent
density）より低くあるべきであり、したがってＣｕ2+
濃度及び撹拌の関数である。典型的には、１ヘルツのパ
ドル振動数及び０.０００７モルのＣｕ2+濃度において
本発明の電解質浴から、０.５mA／cm2のめっき電流は純
粋に近いＣｕの電着層を生じ、そして０.７〜１.０mA／
cm2のめっき電流は低Ｃｕ含量の非磁性ＣｏＣｕ合金の
電着層を生じる（mA＝ミリアンペア）。While the current is flowing at the value of i lo , the non-magnetic C
The u or CoCu layer is deposited and plated. The magnitude of the i lo value is preferably the diffusion limited two-electron reduction cirrent of Cu 2+.
density) and therefore Cu 2+
It is a function of concentration and agitation. Typically, from an electrolyte bath of the present invention at a paddle frequency of 1 Hertz and a Cu 2+ concentration of 0.0007 molar, a plating current of 0.5 mA / cm 2 produces a near pure Cu electrodeposited layer, And 0.7-1.0mA /
A plating current of cm 2 results in a low Cu content non-magnetic CoCu alloy electrodeposited layer (mA = milliamperes).

【００４０】各電流パルスの長さは、４〜５０mA／cm2
において磁性層の場合約２０〜４００秒であり、そして
０.５〜１.０mA／cm2及び１ヘルツのパドル振動数の非
磁性層の場合約１０〜８００秒である。The length of each current pulse is 4 to 50 mA / cm 2.
At about 20-400 seconds for a magnetic layer and about 10-800 seconds for a non-magnetic layer at a paddle frequency of 0.5-1.0 mA / cm 2 and 1 Hertz.

【００４１】ラミネート中得られる層の数は、施用され
るパルスの対の数によって定められるが、本発明の目的
には、各ラミネートの最も外側の層は共に磁性でなけれ
ばならないと理解される。各層の厚さは、用いられる電
流の大きさ、パルスの長さ及び層の沈積の間の電流効率
によって定められる。即ち、電流の大きさを増大させる
と、膜の厚さを増大させ、一方同時に膜のＣｕ含量を減
少させる方に働らき、又パルスの長さを増大させると、
膜のＣｕ含量を一定に保ちながら層の厚さを増大させる
方に働らく。The number of layers obtained in the laminate is determined by the number of pulse pairs applied, but for the purposes of the present invention it is understood that the outermost layers of each laminate must both be magnetic. . The thickness of each layer is defined by the magnitude of the current used, the length of the pulse and the current efficiency during the deposition of the layer. That is, increasing the magnitude of the current increases the thickness of the film, while at the same time acting to decrease the Cu content of the film and increasing the pulse length,
It serves to increase the layer thickness while keeping the Cu content of the film constant.

【００４２】典型的には、上述しためっき浴から本発明
の磁性を得る場合カソードにおける電流効率は約７０％
である。非磁性層の沈積の場合の電流効率は約３０％〜
５０％であり、ｉlo値の増大と共に増大する。最上の結
果のためには、各非磁性層沈積パルスを持続時間約１〜
２秒及び大きさ約０.５mA／cm2のアノードパルスによっ
て進行させる。Typically, when obtaining the magnetism of the present invention from the plating bath described above, the current efficiency at the cathode is about 70%.
Is. The current efficiency in the case of non-magnetic layer deposition is about 30% ~
50% and increases with increasing i lo value. For best results, each non-magnetic layer deposition pulse should last approximately 1 to
Proceed with an anodic pulse for 2 seconds and a magnitude of about 0.5 mA / cm 2 .

【００４３】この電着法が進行するに従って、浴の組成
をモニターし、枯渇したイオンを補充する。As the electrodeposition process proceeds, the composition of the bath is monitored and depleted ions are replenished.

【００４４】同じ電気めっき浴から磁性及び非磁性三元
合金層を交互にめっきする上述した新規な電流パルス法
は、他のラミネート、例えば５％Ｃｕ−９５％ＮｉＦｅ
（磁性）／９５％Ｃｕ−５％ＮｉＦｅ（非磁性）をめっ
きするのに使用することができる。例えば、Romankiw
ら、誘導記録ヘッド及び磁気遮蔽体のための単一めっき
からの電気めっき積層Ｃｕ−Ｎｉ−Ｆｅ膜、Extended A
bstracts of the Electrochemical Society ＡＢＳ＃３
００，８９巻，４３０頁（１９８９）参照（参照例とし
て提示する）。The novel current pulse method described above for alternately plating magnetic and non-magnetic ternary alloy layers from the same electroplating bath is based on other laminates such as 5% Cu-95% NiFe.
It can be used to plate (magnetic) / 95% Cu-5% NiFe (non-magnetic). For example, Romankiw
Et al., Electroplated laminated Cu-Ni-Fe film from single plating for inductive recording heads and magnetic shields, Extended A
bstracts of the Electrochemical Society ABS # 3
00, 89, 430 (1989) (presented as a reference example).

【００４５】〔図面の説明〕 図１〜４において、本発明のめっきＣｏ86Ｆｅ11Ｃｕ3
磁性膜のＢ−Ｈループを同一の厚さ（＝２μｍ）のＮｉ
82Ｆｅ18膜の対応するＢ−Ｈループと比較する。Ｎｉ82
Ｆｅ18膜について、図１は磁化容易軸Ｂ−Ｈループを示
し、図２は磁化困難軸Ｂ−Ｈループを示す。Ｃｏ86Ｆｅ
11Ｃｕ3膜について、図３は磁化容易軸Ｂ−Ｈループを
示し、図４は磁化困難軸Ｂ−Ｈループを示す。上記のル
ープを誘導する際使用される駆動磁場（driving fiel
d）は、磁化容易軸ループ及び磁化困難軸ループについ
てそれぞれ４エルステッド及び２０エルステッドであっ
た。Ｃｏ86Ｆｅ11Ｃｕ3膜の飽和磁化は、Ｎｉ82Ｆｅ18
膜の飽和磁化の２倍であった。２μｍのＣｏ86Ｆｅ11Ｃ
ｕ3膜の飽和保磁力は０.６４エルステッドであり、これ
は２μｍのＮｉ82Ｆｅ18膜のもの（＝０.４６エルステ
ッド）と比較すると有利である。最後に、Ｃｏ86Ｆｅ11
Ｃｕ3膜の場合異方性磁界（Ｈk）は１４エルステッドで
あり、これはＮｉ82Ｆｅ18膜のＨk値(＝３エルステッ
ド)よりかなり高い。Description of Drawings In FIGS. 1 to 4, the plated Co 86 Fe 11 Cu 3 of the present invention is used.
The BH loop of the magnetic film is made of Ni of the same thickness (= 2 μm).
Compare with the corresponding BH loop of the 82 Fe 18 film. Ni 82
For the Fe 18 film, FIG. 1 shows the easy axis BH loop and FIG. 2 shows the hard axis BH loop. Co 86 Fe
For the 11 Cu 3 film, FIG. 3 shows the easy axis BH loop, and FIG. 4 shows the hard axis BH loop. The driving field (driving field) used to induce the above loop.
d) was 4 Oersted and 20 Oersted for the easy axis and hard axis loops, respectively. The saturation magnetization of the Co 86 Fe 11 Cu 3 film is Ni 82 Fe 18
It was twice the saturation magnetization of the film. 2 μm Co 86 Fe 11 C
The coercivity of the u 3 film is 0.64 Oersted, which is advantageous compared to that of the Ni 82 Fe 18 film of 2 μm (= 0.46 Oersted). Finally, Co 86 Fe 11
For Cu 3 films, the anisotropic magnetic field (H k ) is 14 Oersteds, which is considerably higher than the H k value (= 3 Oersteds) of Ni 82 Fe 18 films.

【００４６】図５は、それぞれの元素の重量％で、本発
明のＣｏＦｅＣｕ合金の組成の全範囲を示すグラフであ
る。図５の網目型の区域（cross-hatched area）１は、
本発明の合金中鉄及び銅の実際の重量％を示す。図５の
合金中Ｃｏの重量％は、１００重量％までの差によって
得られる。グラフの網目型の区域１は、合金の磁気特性
が記録ヘッド及び遮蔽体において使用するのに最もよい
ＣｏＦｅＣｕ組成図中の地域を示す。この地域内の合金
が上述した浴から電気めっきされる。磁気特性は膜の組
成の関数として変動する。FIG. 5 is a graph showing the total range of the composition of the CoFeCu alloy of the present invention, in wt% of each element. The cross-hatched area 1 in FIG. 5 is
The actual weight percentages of iron and copper in the alloys of the invention are shown. The wt% Co in the alloy of FIG. 5 is obtained with a difference of up to 100 wt%. The meshed area 1 of the graph shows the area in the CoFeCu composition diagram where the magnetic properties of the alloy are best for use in the recording head and shield. Alloys in this area are electroplated from the baths described above. Magnetic properties vary as a function of film composition.

【００４７】これらのＣｏＦｅＣｕ膜について飽和保磁
力値は、示された地域内において約１.５エルステッド
以下である。それは、Ｃｏ86Ｆｅ11Ｃｕ3−Ｃｏ79Ｆｅ
12Ｃｕ9−Ｃｏ73Ｆｅ13Ｃｕ14及びその近傍の組成軸に
沿って最も低い。しかし、この地域外の組成を持つＣｏ
ＦｅＣｕ膜の場合は、飽和保磁力が１.５エルステッド
よりかなり大きくなる。例えば、Ｃｏ71Ｆｅ4Ｃｕ25膜
の飽和保磁力は２.６５エルステッドである。The coercive force values of these CoFeCu films are about 1.5 Oersted or less in the indicated region. It, Co 86 Fe 11 Cu 3 -Co 79 Fe
12 Cu 9 -Co 73 Fe 13 Cu 14 and lowest along the composition axis in the vicinity. However, Co with a composition outside this region
In the case of the FeCu film, the coercive force is considerably larger than 1.5 Oersted. For example, the coercive force of the Co 71 Fe 4 Cu 25 film is 2.65 Oersted.

【００４８】異方性磁界は、ＣｏＦｅＣｕ膜のＣｕ含量
と共に増大する。ＣｏＦｅＣｕ合金のＣｕ補強によって
本発明の合金中１１エルステッドより高い異方性磁界を
達成することができる。即ち、３〜６重量％のＣｕの範
囲の膜の場合は、異方性磁界が１３〜１４エルステッド
であり、約１４〜２０重量％のＣｕを持つ膜の場合は、
約１６〜２０エルステッドに増大する。The anisotropic magnetic field increases with the Cu content of the CoFeCu film. Cu reinforcement of CoFeCu alloys can achieve an anisotropic magnetic field higher than 11 Oersted in the alloys of the present invention. That is, in the case of a film in the range of 3 to 6 wt% Cu, the anisotropic magnetic field is 13 to 14 Oersted, and in the case of a film having about 14 to 20 wt% Cu,
Increase to about 16-20 oersteds.

【００４９】図２に示される地域の組成を持つＣｏＦｅ
Ｃｕ膜の飽和磁化は、Ｃｕ含量の増大と共に減少し、Ｆ
ｅ含量と共に増大する。即ち、この地域の左側の組成
（８重量％未満のＣｕ含量及び約６〜１５重量％のＦｅ
含量）を持つ合金の飽和磁化は約１８,０００〜２４,０
００ガウスであり、下の右の地域の組成（約１７〜２０
重量％のＣｕ含量及び約６〜８重量％のＦｅ含量）を持
つ合金は約１６,０００〜１８,０００ガウスの飽和磁化
を有し、又上の右の地域の組成（約１７〜２０重量％の
Ｃｕ含量及び約１１〜１５重量％のＦｅ含量）を持つ合
金は、約１８,０００〜２０,０００ガウスの飽和磁化を
有する。CoFe having the composition of the region shown in FIG.
The saturation magnetization of Cu film decreases with the increase of Cu content,
e increases with e content. That is, the composition on the left side of the area (Cu content less than 8 wt% and Fe of about 6-15 wt%).
The saturation magnetization of an alloy with a content of about 18,000 to 24.0
00 Gauss and the composition of the lower right region (about 17-20
The alloy with a Cu content of wt.% And a Fe content of about 6-8 wt.% Has a saturation magnetization of about 16,000 to 18,000 Gauss and also has a composition in the upper right region (about 17-20 wt. % Cu content and about 11-15 wt% Fe content) alloys have a saturation magnetization of about 18,000 to 20,000 Gauss.

【００５０】上述した低い飽和保磁力の組成軸に沿うＣ
ｏＦｅＣｕ膜の磁歪係数は、０にきわめて近い。それ
は、約９重量％未満のＦｅを持つ膜の場合負であり、Ｃ
ｕ含量の増大と共に減少する。約１１重量％を超えるＦ
ｅを持つ膜の場合磁歪係数は正であり、Ｃｕ含量の増大
と共に増大する。C along the composition axis of the low coercive force described above
The magnetostriction coefficient of the oFeCu film is very close to zero. It is negative for films with less than about 9% Fe by weight, and C
Decreases with increasing u content. F over 11% by weight
For films with e, the magnetostriction coefficient is positive and increases with increasing Cu content.

【００５１】[0051]

【発明の効果】即ち、これらのデータに基づけば、本発
明の低Ｃｕ含量ＣｏＦｅＣｕ合金は、独特なセットの電
磁気特性を有し、これは本発明者が知るかぎり、記録ヘ
ッド、遮蔽体及び磁束ガイドにおいて有用である薄膜合
金中現在利用できる最良の特性のセットであることがわ
かる。これらの合金は、低い飽和保磁力、高い飽和磁
化、比較的高い異方性磁界及び０に近い磁歪係数の組合
せを提供する。Thus, based on these data, the low Cu content CoFeCu alloys of the present invention have a unique set of electromagnetic properties which, to the best knowledge of the inventor, are the recording head, shield and magnetic flux. It turns out that it is the best set of properties currently available in thin film alloys that is useful in guides. These alloys offer a combination of low coercivity, high saturation magnetization, relatively high anisotropy field and near zero magnetostriction coefficient.

【００５２】上述したパルス電流変調法を使用して、本
発明のＣｏＦｅＣｕ合金とのＣｕのラミネートも製造さ
れた。この方法が上述したラミネートを生じる証拠は図
６に示される。図６は、本発明の方法によってつくられ
たＣｏ86Ｆｅ11Ｃｕ3−Ｃｕラミネートの断面の電子ミ
クロ組織検査図を示す。図６に示される積層膜は、５つ
の２５Åの厚さのＣｕ層３によって分離された６つの３
０００Åの厚さのＣｏ86Ｆｅ11Ｃｕ3層２よりなる。示
される断面は、膜の実際の断面に対して２０,０００倍
に拡大されている。Laminates of Cu with the CoFeCu alloys of the present invention were also produced using the pulsed current modulation method described above. Evidence that this method yields the laminate described above is shown in FIG. FIG. 6 shows an electronic microstructural examination of a cross section of a Co 86 Fe 11 Cu 3 —Cu laminate made by the method of the present invention. The laminated film shown in FIG. 6 is composed of six 3 layers separated by five 25 Å thick Cu layers 3.
It consists of a Co 86 Fe 11 Cu 3 layer 2 with a thickness of 000Å. The cross section shown is magnified 20,000 times relative to the actual cross section of the membrane.

【００５３】本発明は、その好ましい実施態様に関して
特に示され説明されたが、形態及び詳細の前記その他の
変化を本発明の精神及び範囲から逸脱することなしに行
ない得ることが当業者に理解されるべきであり、本発明
の範囲は、特許請求の範囲によってのみ限定されるべき
である。While the present invention has been particularly shown and described with respect to its preferred embodiments, it will be understood by those skilled in the art that the foregoing and other changes in form and detail can be made without departing from the spirit and scope of the invention. It should be noted that the scope of the present invention should be limited only by the claims.

【図面の簡単な説明】[Brief description of drawings]

【図１】２μｍのＮｉ82Ｆｅ18膜の磁化容易軸における
Ｂ−Ｈループを示す。FIG. 1 shows a BH loop on the easy axis of a 2 μm Ni 82 Fe 18 film.

【図２】２μｍのＮｉ82Ｆｅ18膜の磁化困難軸における
Ｂ−Ｈループを示す。FIG. 2 shows a BH loop on the hard axis of a 2 μm Ni 82 Fe 18 film.

【図３】２μｍのＣｏ86Ｆｅ11Ｃｕ3膜の磁化容易軸に
おけるＢ−Ｈループを示す。FIG. 3 shows a BH loop on the easy axis of a 2 μm Co 86 Fe 11 Cu 3 film.

【図４】２μｍのＣｏ86Ｆｅ11Ｃｕ3膜の磁化困難軸に
おけるＢ−Ｈループを示す。FIG. 4 shows a BH loop on the hard axis of a 2 μm Co 86 Fe 11 Cu 3 film.

【図５】それぞれの元素の重量％で、本発明のＣｏＦｅ
Ｃｕ合金の組成の範囲を示すグラフ。FIG. 5: CoFe of the present invention, in wt% of each element
The graph which shows the range of the composition of Cu alloy.

【図６】本発明のラミネート膜の電子ミクロ組織検査
図。FIG. 6 is an electronic microstructure inspection diagram of the laminate film of the present invention.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 ジエイ−ウエイ・チヤン アメリカ合衆国ニユーヨーク州10707. タカホウ．ロレンスアベニユー54 (72)発明者 ウイルマ・ジーン・ホーカンス アメリカ合衆国ニユーヨーク州10562. オシニング．ウツズブルツクサークル９ −１ (72)発明者 ジユーデイス・ダイアン・オルセン アメリカ合衆国ニユーヨーク州13827. オウイーゴ．キングポイントサークルサ ウス10 (72)発明者 ボーヤン・ペテク アメリカ合衆国ニユーヨーク州10520. クロトン−オン−ハドソン．ホリスレイ ン28 (72)発明者 ルボミル・タラス・ロマンキウ アメリカ合衆国ニユーヨーク州10510. ブライアークリフマナー．ダンレイン７ (56)参考文献 特開 昭59−41810（ＪＰ，Ａ) 特開 昭49−17325（ＪＰ，Ａ) 特開 平１−238106（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) The inventor Jei Wei Jiang Yang New York, USA 10707. Takaho. Lawrence Avenyu 54 (72) Inventor Wilma Gene Hawkans New York, USA 10562. Utsuzbrutsk Circle 9 -1 (72) Inventor Youday Diane Olsen New York, USA 13827. Owego. King Point Circle House 10 (72) Inventor Boyan Petek New York, USA 10520. Croton-on-Hudson. Hollis Rain 28 (72) Inventor Rubomil Taras Romankiu 10510, New York, USA Briarcliff Manor. Dunlain 7 (56) Reference JP 59-41810 (JP, A) JP 49-17325 (JP, A) JP 1-238106 (JP, A)

Claims (12)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 式ＣｏxＦｅyＣｕz(ここに、x,yおよびz
は合金中のＣｏ、ＦｅおよびＣｕの重量%をそれぞれ表
し、66≦x≦92、6≦y≦14、2≦z≦20、かつ、x+y+z=100
である)で表されるコバルト、鉄および銅の合金からな
る磁性薄膜。1. The formula Co x Fe y Cu z (where x, y and z
Represents the weight% of Co, Fe and Cu in the alloy, respectively, 66 ≦ x ≦ 92, 6 ≦ y ≦ 14, 2 ≦ z ≦ 20, and x + y + z = 100.
A magnetic thin film made of an alloy of cobalt, iron and copper represented by 【請求項２】 Ｃｏ，ＦｅおよびＣｕの合金が、11〜20
エルステッド(Oe)の異方性磁界を有する請求項１記載の
磁性薄膜。2. An alloy of Co, Fe and Cu containing 11 to 20
The magnetic thin film according to claim 1, which has an anisotropic magnetic field of Oersted (Oe). 【請求項３】 Ｃｏ，ＦｅおよびＣｕの合金が、1エル
ステッド(Oe)未満の保磁力値を有する請求項１記載の磁
性薄膜。3. The magnetic thin film according to claim 1, wherein the alloy of Co, Fe and Cu has a coercive force value of less than 1 Oersted (Oe). 【請求項４】 Ｃｏ，ＦｅおよびＣｕの合金が、＋１０
-4〜−１０-4の磁歪値を有する請求項１記載の磁性薄
膜。4. The alloy of Co, Fe and Cu is +10.
The magnetic thin film according to claim 1, which has a magnetostriction value of -4 to -10 -4 . 【請求項５】 請求項１〜４のいずれかに記載の磁性薄
膜を非磁性薄膜に積層してなるラミネート。5. A laminate formed by laminating the magnetic thin film according to claim 1 on a non-magnetic thin film. 【請求項６】 請求項１〜４のいずれかに記載の磁性薄
膜を含む磁気記録ヘッド。6. A magnetic recording head including the magnetic thin film according to claim 1. 【請求項７】 磁性薄膜を含む磁気記録ヘッドであっ
て、磁性薄膜が図５に示すクロスハッチの領域の重量%
組成を有するコバルト、鉄および銅の合金からなる磁気
記録ヘッド。7. A magnetic recording head including a magnetic thin film, wherein the magnetic thin film is the weight% of the area of the cross hatch shown in FIG.
A magnetic recording head made of an alloy of cobalt, iron and copper having a composition. 【請求項８】 請求項５記載のラミネートを含む磁気記
録ヘッド。8. A magnetic recording head comprising the laminate of claim 5. 【請求項９】 請求項１記載の磁性薄膜を含む磁気遮蔽
体。9. A magnetic shield comprising the magnetic thin film according to claim 1. 【請求項１０】 磁性薄膜を含む磁気遮蔽体であって、
磁性薄膜が図５に示すクロスハッチの領域の重量%組成
を有するコバルト、鉄および銅の合金からなる磁気遮蔽
体。10. A magnetic shield including a magnetic thin film, comprising:
A magnetic shield in which the magnetic thin film is made of an alloy of cobalt, iron and copper having a weight% composition in the region of the cross hatch shown in FIG. 【請求項１１】 請求項５記載のラミネートを含む磁気
遮蔽体。11. A magnetic shield comprising the laminate of claim 5. 【請求項１２】 少なくとも１つの磁性層と少なくとも
１つの非磁性層との交互の層の積層フィルムを電解析出
させる方法であって、３元合金からなる磁性層と３元合
金中の少なくとも１種の元素からなる非磁性層を、３元
合金の３種の元素のそれぞれを含有する電気めっき浴か
ら、浴のカソードに高めっき電流と低めっき電流とを交
互にパルスさせることにより交互にそれぞれを電気めっ
き析出させることを特徴とする方法。12. A method of electrolytically depositing a laminated film of alternating layers of at least one magnetic layer and at least one non-magnetic layer, the magnetic layer comprising a ternary alloy and at least one of the ternary alloys. Non-magnetic layers of different elements are alternately deposited by alternately pulsing a high plating current and a low plating current from the electroplating bath containing each of the three elements of the ternary alloy to the cathode of the bath. Is deposited by electroplating.
JP3162301A 1990-08-23 1991-06-07 Magnetic thin film, laminate, magnetic recording head, magnetic shield, and method for producing laminate Expired - Lifetime JP2544845B2 (en)

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US571804 1990-08-23

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