JP2541553B2 - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JP2541553B2 JP2541553B2 JP62125218A JP12521887A JP2541553B2 JP 2541553 B2 JP2541553 B2 JP 2541553B2 JP 62125218 A JP62125218 A JP 62125218A JP 12521887 A JP12521887 A JP 12521887A JP 2541553 B2 JP2541553 B2 JP 2541553B2
- Authority
- JP
- Japan
- Prior art keywords
- cut
- semiconductor integrated
- integrated circuit
- electrodes
- fuse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体集積回路に関し、特に特定の電極間に
設けられている切換ヒューズを、回路特性の合わせ込み
や冗長回路の切換え等の為に切断して使用する構成の半
導体集積回路に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit, and in particular, a switching fuse provided between specific electrodes is used for matching circuit characteristics and switching a redundant circuit. The present invention relates to a semiconductor integrated circuit configured to be cut and used.
従来、この種の半導体集積回路は、第３図に示す様
に、第１及び第２の回路の回路配線2a,2bとそれぞれ接
続された第１及び第２の電極3a,3b間に、被切断部42が
１箇所設けられた切換ヒューズ4bを予め接続しておき、
用途に応じて、被切断部42のところに設けられたパッシ
ベーション膜５の開口部６からレーザー光を照射するか
電極3a,3b間に過電流を流してこの被切断部42を切断す
る構成となっていた。Conventionally, as shown in FIG. 3, a semiconductor integrated circuit of this type has first and second electrodes 3 a and 3 b connected to circuit wirings 2 a and 2 b of first and second circuits, respectively. A switching fuse 4 b having one cut portion 42 provided in advance is previously connected in between,
Depending on the application, laser light is emitted from the opening 6 of the passivation film 5 provided at the portion 42 to be cut or an overcurrent is passed between the electrodes 3 a and 3 b to cut the portion 42 to be cut. It was a composition.
上述した従来の半導体集積回路は、切換ヒューズ4bに
被切断部42が１箇所設けられた構成となっているので、
レーザー光や電流で被切断部42を切断したときに被切断
部42の熔断片がまわりに飛び散って付着し、これが後工
程での熱処理等により再結合し、切断したはずの被切断
部42がつながってしまい、後工程や時にはユーザーの使
用時に回路特性等が変動することがあり、品質上の問題
が生じるという欠点があった。The conventional semiconductor integrated circuit described above has a configuration in which the cut fuse 42 is provided at one location on the switching fuse 4 b .
When the cut portion 42 is cut with a laser beam or an electric current, the molten fragments of the cut portion 42 scatter around and adhere to the cut portion 42. However, there is a drawback in that the circuit characteristics and the like may change during the post-process or at the time of use by the user, resulting in quality problems.
本発明の目的は、切断した切換ヒューズが後工程の熱
処理等で再び導通状態になることを防止することができ
る半導体集積回路を提供することにある。An object of the present invention is to provide a semiconductor integrated circuit capable of preventing the cut-off switching fuse from becoming conductive again due to heat treatment or the like in a subsequent process.
本発明の半導体集積回路は、被切断部をもち、第１及
び第２の回路とそれぞれ接続する第１及び第２の電極間
を予め接続しておき、用途に応じて前記被切断部を切断
し前記電極間を切り離して使用するための切換ヒューズ
を有する半導体集積回路において、前記切換ヒューズ
に、互いに独立して切断できかつ互いに直列接続された
前記被切断部を複数設けると共に、これら複数の被切断
部それぞれと対応して、これら被切断部切断用のビーム
照射用開口部及び過電流供給用電極のうちの少なくとも
一方を設けて構成される。The semiconductor integrated circuit of the present invention has a portion to be cut, and the first and second electrodes respectively connected to the first and second circuits are connected in advance and the portion to be cut is cut according to the application. In a semiconductor integrated circuit having a switching fuse for separating and using the electrodes, the switching fuse is provided with a plurality of cut portions that can be cut independently of each other and are connected in series, and the plurality of cut portions are connected to each other. Corresponding to each cut portion, at least one of the beam irradiation opening for cutting the cut portion and the overcurrent supply electrode is provided.
次に、本発明の実施例について図面を参照して説明す
る。Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の第１の実施例を示す平面図である。 FIG. 1 is a plan view showing a first embodiment of the present invention.
半導体チップ１には、第１及び第２の回路が形成さ
れ、これら第１及び第２の回路の所定の回路配線2a,2b
とそれぞれ接続する第１及び第２の電極3a,3bが設けら
れている。First and second circuits are formed on the semiconductor chip 1, and predetermined circuit wirings 2 a and 2 b of these first and second circuits are formed.
First and second electrodes 3 a respectively connecting, 3 b is provided when.
これら第１及び第２の電極3a,3b間には互いに独立し
て切断できる、２箇所の被切断部42がヒューズ配線部41
により直列接続された切換ヒューズ４が設けられてい
る。Between the first and second electrodes 3 a and 3 b, there are two cut portions 42 which can be cut independently of each other, and a fuse wiring portion 41.
A switching fuse 4 connected in series is provided.
また、回路配線2a,2b、電極3a,3b及び切換ヒューズ４
上はパッシベーション膜５で保護されているが、被切断
部42それぞれの上はレーザー光を照射するためにパッシ
ベーション膜５が開口され、開口部６が設けられてい
る。Also, the circuit wirings 2 a and 2 b , the electrodes 3 a and 3 b, and the switching fuse 4
The top is protected by the passivation film 5, but the passivation film 5 is opened and the opening 6 is provided on each of the cut portions 42 for irradiating the laser beam.
そして、回路特性の合せ込みや冗長回路の切換え等に
より電極3a,3b間を切り離す必要が生じたときには、２
箇所の開口部６からそれぞれレーザー光を照射し２箇所
の被切断部42を切断する構成となっている。Then, when it becomes necessary to separate the electrodes 3 a and 3 b by matching the circuit characteristics or switching the redundant circuit,
Laser light is emitted from each of the openings 6 at the two positions to cut the cut portions 42 at the two positions.
一つの被切断部42が後工程の熱処理等で再びつながっ
てしまう確率は、組立及び検査工程を含めて0.1％程度
であるので、この実施例の二つの被切断部42がともにつ
ながってしまう確率は、（0.1×10-2）２＝10-6程度と
なり、組立，検査工程で更に不良が除去されるので実際
にはほとんど無視することができ、品質上の問題を未然
に防ぐことができる。The probability that one cut part 42 will be connected again by heat treatment in the subsequent process is about 0.1% including the assembly and inspection steps, so the probability that the two cut parts 42 of this embodiment will be connected together Is about (0.1 × 10 -2 ) 2 = 10 -6, and further defects can be eliminated in the assembly and inspection processes, so it can be practically ignored and quality problems can be prevented. .
なお、レーザー光による被切断部42の切断は瞬間的に
行なえるので、切断箇所が２倍になっても実際上ほとん
ど工数増とはならない。Since the portion 42 to be cut can be instantaneously cut by the laser light, the number of man-hours is practically not increased even if the number of cut portions is doubled.
第２図は本発明の第２の実施例を示す平面図である。 FIG. 2 is a plan view showing a second embodiment of the present invention.
この第２の実施例が第１の実施例と相違する点は、二
つの被切断部42の間に更に第３の電極3cを設け、第１〜
第３の電極3a〜3c上のパッシベーション膜をそれぞれ開
口して電極開口部7a〜7cを設け、これら電極開口部7a〜
7cを介して電極3a,3c間及び電極3b,3c間それぞれに個別
にかつ同時に過電流を流して二つの被切断部42を切断す
るようにした点にある。The second embodiment is different from the first embodiment in that a third electrode 3c is further provided between the two cut portions 42, and the first to third
The third electrode 3 a on to 3 c passivation film were opened each electrode opening 7 a to 7-c is provided, these electrode opening 7 a ~
The point is that an overcurrent is separately and simultaneously applied between the electrodes 3 a and 3 c and between the electrodes 3 b and 3 c via 7 c to cut the two cut portions 42.
また、開口部６は、被切断部42の熔断時に発生する熱
を放散させるので、パッシベーション膜5aにクラックが
発生するのを防止する効果がある。The opening 6, so dissipating the heat generated during fusible of the cutting part 42, the effect of preventing occurrence of cracks in the passivation film 5 a.
なお、これら実施例において、被切断部42を２箇所設
けた場合について説明したが、３箇所或はそれより多く
設けることにより更に信頼度を上げることができる。３
箇所の場合、再結合の確率は10-9となる。In these embodiments, the case where the cut portion 42 is provided at two places has been described, but the reliability can be further improved by providing at least three places. Three
In the case of locations, the recombination probability is 10 -9 .
以上説明した様に本発明は、切換ヒューズに、互いに
独立して切断できかつ互いに直列接続された複数の被切
断部を設けると共に、これら被切断部それぞれと対応し
て、これら被切断部切断用のビーム照射用開口部及び過
電流供給用電極のうち少なくとも一方を設け、これら複
数の被切断部をそれぞれ個別に切断する構成とすること
により、切断された切換ヒューズが後工程の熱処理等で
再びつながってしまうのを防止することができ、回路特
性が変動することを防止できる効果がある。As described above, according to the present invention, the switching fuse is provided with a plurality of cut portions that can be cut independently of each other and are connected in series with each other. At least one of the beam irradiation opening and the overcurrent supply electrode is provided, and the plurality of cut portions are individually cut, so that the cut switching fuse is re-cut by a heat treatment or the like in a subsequent process. It is possible to prevent the connection and prevent the circuit characteristics from changing.
第１図及び第２図はそれぞれ本発明の第１及び第２の実
施例を示す平面図、第３図は従来の半導体集積回路の一
例を示す平面図である。 １……半導体チップ、2a,2b……回路配線、3a〜3c……
電極、4,4a,4b……切換ヒューズ、5,5a,5b……パッシベ
ーション膜、６……開口部、7a〜7c……電極開口部、41
……ヒューズ配線部、42……被切断部。1 and 2 are plan views showing the first and second embodiments of the present invention, respectively, and FIG. 3 is a plan view showing an example of a conventional semiconductor integrated circuit. 1 ...... semiconductor chip, 2 a, 2 b ...... circuit wiring, 3 a to 3 c ......
Electrode, 4,4 a , 4 b ...... Switching fuse, 5,5 a , 5 b ...... Passivation film, 6 ...... Opening part, 7 a to 7 c ...... Electrode opening part, 41
...... Fuse wiring part, 42 ...... Cut part.
Claims (1)
れぞれ接続する第１及び第２の電極間を予め接続してお
き、用途に応じて前記被切断部を切断し前記電極間を切
り離して使用するための切換ヒューズを有する半導体集
積回路において、前記切換ヒューズに、互いに独立して
切断できかつ互いに直列接続された前記被切断部を複数
設けると共に、これら複数の被切断部それぞれと対応し
て、これら被切断部切断用のビーム照射用開口部及び過
電流供給用電極のうちの少なくとも一方を設けたことを
特徴とする半導体集積回路。1. A first and a second electrode which has a portion to be cut and is respectively connected to the first and second circuits, is previously connected, and the portion to be cut is cut according to the application. In a semiconductor integrated circuit having a switching fuse to be used by separating the spaces, the switching fuse is provided with a plurality of cut portions that can be cut independently of each other and are connected in series, and each of the plurality of cut portions is cut. Corresponding to the above, at least one of the beam irradiation opening for cutting the cut portion and the overcurrent supply electrode is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62125218A JP2541553B2 (en) | 1987-05-21 | 1987-05-21 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62125218A JP2541553B2 (en) | 1987-05-21 | 1987-05-21 | Semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63289835A JPS63289835A (en) | 1988-11-28 |
| JP2541553B2 true JP2541553B2 (en) | 1996-10-09 |
Family
ID=14904780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62125218A Expired - Lifetime JP2541553B2 (en) | 1987-05-21 | 1987-05-21 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2541553B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002110806A (en) * | 2000-09-29 | 2002-04-12 | Rohm Co Ltd | Ic chip and semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61168242A (en) * | 1985-01-21 | 1986-07-29 | Hitachi Chiyou Lsi Eng Kk | Semiconductor integrated circuit device |
-
1987
- 1987-05-21 JP JP62125218A patent/JP2541553B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63289835A (en) | 1988-11-28 |
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