JP2501406B2 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JP2501406B2
JP2501406B2 JP5028680A JP2868093A JP2501406B2 JP 2501406 B2 JP2501406 B2 JP 2501406B2 JP 5028680 A JP5028680 A JP 5028680A JP 2868093 A JP2868093 A JP 2868093A JP 2501406 B2 JP2501406 B2 JP 2501406B2
Authority
JP
Japan
Prior art keywords
power supply
lead
width
semiconductor device
supply lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP5028680A
Other languages
Japanese (ja)
Other versions
JPH0661410A (en
Inventor
憲明 角
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5028680A priority Critical patent/JP2501406B2/en
Publication of JPH0661410A publication Critical patent/JPH0661410A/en
Application granted granted Critical
Publication of JP2501406B2 publication Critical patent/JP2501406B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は半導体装置に関し、特
に給電用リードの改良に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to improvement of a power supply lead.

【0002】[0002]

【従来の技術】図3は従来の半導体装置を示す構造図で
あり、図において、1は半導体チップ、2はこの半導体
チップ1を固着する半田、3は信号用リード、4は給電
用リード、5は半導体チップ1と信号用リード3、給電
用リード4の間を接続する金線、6は半田2及び金線5
の安定した接続のためのメッキ、7はパッケージの基体
を成す封止材である。
2. Description of the Related Art FIG. 3 is a structural view showing a conventional semiconductor device. In the figure, 1 is a semiconductor chip, 2 is a solder for fixing the semiconductor chip 1, 3 is a signal lead, 4 is a power supply lead, 5 is a gold wire connecting the semiconductor chip 1 to the signal lead 3 and the power supply lead 4, 6 is a solder 2 and a gold wire 5
Is a plating for stable connection, and 7 is an encapsulant forming a base of the package.

【0003】図4は図3の半導体装置を搭載する基板に
設けるパッドのレイアウト図であり、8は信号用パッ
ド、9は給電用のパッドである。上記半導体チップ1は
集積回路として機能するもので、その電源は給電用リー
ド4と金線5を経由して外部より供給される。その時生
じる電圧降下を少なくするために、給電用リード4はそ
の幅を信号用リード3より広くして導通抵抗を小さくし
てある。また、給電用リード4の幅は、封止材7との熱
膨張係数の差によって生じる隙間発生の防止のために制
限値が設けられている。
FIG. 4 is a layout diagram of pads provided on a substrate on which the semiconductor device of FIG. 3 is mounted. Reference numeral 8 is a signal pad, and 9 is a power supply pad. The semiconductor chip 1 functions as an integrated circuit, and its power is supplied from the outside via the power supply lead 4 and the gold wire 5. In order to reduce the voltage drop that occurs at that time, the width of the power supply lead 4 is made wider than that of the signal lead 3 to reduce the conduction resistance. Further, the width of the power supply lead 4 is provided with a limit value in order to prevent a gap from being generated due to a difference in coefficient of thermal expansion from the sealing material 7.

【0004】[0004]

【発明が解決しようとする課題】しかし、上記構成の半
導体装置では、給電用リードが基体に固着される側から
基板に装着される側まで幅広く形成されている。このた
め、基体側では封止材と給電用リードとの熱膨張特性の
差から、特に封止材の外縁において封止材と給電用リー
ド間に隙間が生じるという問題点があった。
However, in the semiconductor device having the above structure, the power supply leads are formed widely from the side fixed to the base to the side mounted on the substrate. Therefore, there is a problem that a gap is generated between the sealing material and the power supply lead especially on the outer edge of the sealing material due to the difference in thermal expansion characteristics between the sealing material and the power supply lead on the substrate side.

【0005】また、基板側では、信号用パッドより幅広
の給電用パッドが必要であり、一方、幅の狭い信号用パ
ッドも必要なため、結局2種類のパッド設計が要求され
るという問題点もあった。
On the board side, a power supply pad that is wider than the signal pad is required, and on the other hand, a signal pad that is narrower is also required, so that there is a problem that two types of pad designs are eventually required. there were.

【0006】この発明は上記のような課題を解決するた
めになされたものであり、その目的は、幅広の給電用リ
ードの低抵抗作用を保持したまま、封止材の外縁におけ
る封止材とリード間の隙間発生を防止するとともに、装
着用パッドの標準化を可能とした半導体装置を提供する
ことにある。
The present invention has been made to solve the above problems, and an object thereof is to provide a sealing material at the outer edge of the sealing material while maintaining the low resistance action of the wide power supply lead. It is an object of the present invention to provide a semiconductor device in which a gap between leads can be prevented and a mounting pad can be standardized.

【0007】[0007]

【課題を解決するための手段】この発明にかかる半導体
装置は、パッケージの外縁となる部分を内包する切り欠
きを有し上記信号用リードの幅とほぼ同等の幅を有する
分岐片と、この分岐片を連結する橋絡片とより形成され
る給電用リードを備えている。
SUMMARY OF THE INVENTION A semiconductor device according to the present invention is a notch that includes a portion which becomes an outer edge of a package.
And has a width almost equal to the width of the signal lead described above.
It is composed of a branch piece and a bridging piece connecting the branch pieces.
Equipped with a power supply lead.

【0008】[0008]

【作用】上記のように構成したので、給電用リードは基
体のパッケージ外縁近傍への固着部分と基板への装着部
分が狭くなるので、上記固着部分での封止材との接合面
積が減少することにより、樹脂封止時の熱膨張差による
封止材と給電用リード間の隙間の発生が防止され、装着
部分では信号用リードと同様の幅にすることが可能とな
る。
With the above-described structure, the power supply leads have a narrower area where the base is fixed near the outer edge of the package and the area where the power supply lead is attached to the substrate. As a result, a gap between the sealing material and the power supply lead is prevented from being generated due to the difference in thermal expansion during resin sealing, and the mounting portion can have the same width as the signal lead.

【0009】[0009]

【実施例】以下、この発明の実施例を図を参照して詳細
に説明する。図1及び図2はこの発明の一実施例を示す
斜視図及び配置図である。なお、この実施例では上記従
来例と同一又は相当する部分には同一の符号を付し説明
を省略する。各図において、20は平板材よりなる給電
用リードである。この給電用リード20の両端中央には
切欠部21a,21bが設けられている。この切欠部2
1a,21bは両端側から上記給電用リード20の中央
部方向に延長して形成され、これにより両側には分岐片
22a,22a,22b,22bがそれぞれ形成されて
いる。すなわち、上記給電用リード20は「H」字形状
となっている。要約すると、上記給電用リード20は、
パッケージ10の外縁10aとなる部分を内包する切欠
部21aを有し上記信号用リード3の幅とほぼ同等の幅
を有する分岐片22a,22a,22b,22bと、こ
の分岐片22a,22a,22b,22bを連結する橋
絡片23とより形成される。 尚、給電用リードとは、図
2のパッド配置図において装着用パッド23,23が2
組あることからもわかるように、電源電圧用リードと接
地用リードとを総称したものである。
Embodiments of the present invention will now be described in detail with reference to the drawings. 1 and 2 are a perspective view and an arrangement view showing an embodiment of the present invention. In this embodiment, the same or corresponding parts as those in the above-mentioned conventional example are designated by the same reference numerals and the description thereof will be omitted. In each figure, 20 is a power supply lead made of a flat plate material. Notches 21a and 21b are provided at the centers of both ends of the power supply lead 20. This notch 2
1a and 21b are formed to extend from both ends toward the center of the power supply lead 20, and branch pieces 22a, 22a, 22b and 22b are formed on both sides, respectively. That is, the power supply lead 20 has an "H" shape. In summary, the power supply lead 20 is
Notch that includes the portion that becomes the outer edge 10a of the package 10
A width that has a portion 21a and is approximately equal to the width of the signal lead 3 described above.
Branch pieces 22a, 22a, 22b, 22b having
Bridge connecting the branch pieces 22a, 22a, 22b, 22b of the
It is formed with the entanglement piece 23. Note that the power supply leads are
In the pad layout of FIG. 2, the mounting pads 23, 23 are 2
As you can see from the pair, it is connected to the lead for power supply voltage.
This is a general term for ground leads.

【0010】分岐片22a,22aは基体に固着される
もので、これらの幅は、信号用リード3の基体への固着
部分の幅と同一に形成され、分岐片22b,22bは基
板側に固着されるべくその幅が信号用リード3の装着部
分の幅と同一に形成されている。なお、23は分岐片2
2bを固着すべく基板に設けられた給電用パッドであ
り、その形状は信号用パッド8の形状と同一にしてあ
る。
The branch pieces 22a, 22a are fixed to the base body, and the width thereof is formed to be the same as the width of the portion of the signal lead 3 fixed to the base body, and the branch pieces 22b, 22b are fixed to the substrate side. As much as possible, its width is formed to be the same as the width of the mounting portion of the signal lead 3. In addition, 23 is a branch piece 2
2b is a power supply pad provided on the substrate to fix the same, and its shape is the same as that of the signal pad 8.

【0011】次に作用について説明する。上記給電用リ
ード20の分岐片22a,22bの幅が信号用リード3
の固着部分、装着部分の幅と同一に形成されているの
で、中央部の幅が従来と同一の時は僅かに抵抗値は増す
が、幅の広い部分が給電用リード20の大部分を占める
ため、影響は無視できる。
Next, the operation will be described. The width of the branch pieces 22a and 22b of the power supply lead 20 is the signal lead 3
Since it is formed to have the same width as that of the fixed portion and the mounting portion, the resistance value slightly increases when the width of the central portion is the same as the conventional one, but the wide portion occupies most of the feeding lead 20. Therefore, the effect can be ignored.

【0012】一方、分岐片22aの幅は信号用リード3
との固着部分と同一幅なので、従来の図3に示す給電用
リード4と比較すると、固着部分,すなわちパッケージ
の外縁において、給電用リード20の分岐片22a,2
2aと封止材7との接合面積が減少するので、熱膨張差
によって、給電用リード20の分岐片22a,22aと
封止材7との間に隙間が発生するようなことがなくな
る。そして、基板に設けられる装着用パッド8,23
は同一形状に形成されるので、パッド設計が容易とな
る。
On the other hand, the width of the branch piece 22a is equal to the width of the signal lead 3
Since anchoring portion the same width as the, for power supply of the prior art shown in FIG. 3
Compared with the lead 4, the fixed part, that is, the package
At the outer edge of the power supply lead 20.
Since the joint area between 2a and the sealing material 7 decreases, the difference in thermal expansion
By the branch pieces 22a, 22a of the power supply lead 20
No gap is generated between the sealing material 7 and
It Then, the mounting pads 8 and 23 provided on the substrate X
Are formed in the same shape, which facilitates the pad design.

【0013】なお、分岐片22aの幅は信号用リード3
の固着部分の幅と同一の場合を説明したが、これに限定
されず、例えばほぼ同等にしてもよい。
The width of the branch piece 22a is the width of the signal lead 3
Although the case where the width is the same as the width of the fixed portion has been described, the width is not limited to this and may be substantially equal.

【0014】[0014]

【発明の効果】以上のように、本発明の半導体装置によ
れば、パッケージの外縁となる部分を内包する切り欠き
を有し上記信号用リードの幅とほぼ同等の幅を有する分
岐片と、この分岐片を連結する橋絡片とより形成される
給電用リードを備えているので、給電用リードは低抵抗
な特性を持ち、さらに、パッケージの外縁における給電
用リードの分岐片と封止材とのかい離が防止されて半導
体装置としての信頼性を向上できる効果が得られる。
As described above, according to the semiconductor device of the present invention, the notch that includes the outer edge portion of the package is included.
Has a width almost equal to the width of the signal lead described above.
It is formed by a branch piece and a bridging piece that connects the branch pieces.
Equipped with power supply leads, power supply leads have low resistance
Power supply at the outer edge of the package
It is possible to prevent separation of the branching piece of the use lead from the sealing material and to improve the reliability of the semiconductor device.

【0015】また、基板上の装着用パッドの標準化が図
れるため、半導体装置を実装する装置の生産性を向上す
る効果も得られる。
Further, since the mounting pads on the substrate can be standardized, the effect of improving the productivity of the device for mounting the semiconductor device can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の半導体装置の一実施例を示す斜視図
である。
FIG. 1 is a perspective view showing an embodiment of a semiconductor device of the present invention.

【図2】この発明の半導体装置の一実施例を示す配置図
である。
FIG. 2 is a layout showing an embodiment of the semiconductor device of the present invention.

【図3】従来の半導体装置の一例を示す構造図である。FIG. 3 is a structural diagram showing an example of a conventional semiconductor device.

【図4】図3の半導体装置を搭載する基板に設けるパッ
ドのレイアウト図である。
FIG. 4 is a layout diagram of pads provided on a substrate on which the semiconductor device of FIG. 3 is mounted.

【符号の説明】 1 半導体チップ 3 信号用リード 20 給電用リード 21a,21b 切欠部 22a,22b 分岐片[Description of Reference Signs] 1 semiconductor chip 3 signal lead 20 power supply lead 21a, 21b cutout 22a, 22b branching piece

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 半導体チップを収容するパッケージと、
このパッケージの外縁から突出した信号用リード及び給
電用リードとを備えた半導体装置において、 上記給電用リードは、上記パッケージの外縁となる部分
を内包する切り欠きを有し上記信号用リードの幅とほぼ
同等の幅を有する分岐片と、この分岐片を連結する橋絡
片とを形成して成ることを特徴とする半導体装置。
1. A package for accommodating a semiconductor chip ,
In a semiconductor device including a signal lead and a power supply lead protruding from an outer edge of the package, the power supply lead is a portion that is an outer edge of the package.
Has a notch that includes
A branch having the same width and a bridge connecting the branches.
A semiconductor device, characterized in that it is formed by forming a piece .
JP5028680A 1993-01-25 1993-01-25 Semiconductor device Expired - Lifetime JP2501406B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5028680A JP2501406B2 (en) 1993-01-25 1993-01-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5028680A JP2501406B2 (en) 1993-01-25 1993-01-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH0661410A JPH0661410A (en) 1994-03-04
JP2501406B2 true JP2501406B2 (en) 1996-05-29

Family

ID=12255218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5028680A Expired - Lifetime JP2501406B2 (en) 1993-01-25 1993-01-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2501406B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6162520B2 (en) * 2013-07-26 2017-07-12 京セラ株式会社 Package for housing semiconductor element and mounting structure including the same
WO2017056144A1 (en) * 2015-09-28 2017-04-06 三菱電機株式会社 Semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5025176A (en) * 1973-05-19 1975-03-17
JPS5887359U (en) * 1981-12-09 1983-06-14 日本電気ホームエレクトロニクス株式会社 semiconductor equipment
JPS6114739A (en) * 1984-06-30 1986-01-22 Sony Corp Semiconductor device

Also Published As

Publication number Publication date
JPH0661410A (en) 1994-03-04

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