JP2023502245A - 発光ダイオードデバイスおよび照明システムのためのファンアウト構造 - Google Patents
発光ダイオードデバイスおよび照明システムのためのファンアウト構造 Download PDFInfo
- Publication number
- JP2023502245A JP2023502245A JP2022529112A JP2022529112A JP2023502245A JP 2023502245 A JP2023502245 A JP 2023502245A JP 2022529112 A JP2022529112 A JP 2022529112A JP 2022529112 A JP2022529112 A JP 2022529112A JP 2023502245 A JP2023502245 A JP 2023502245A
- Authority
- JP
- Japan
- Prior art keywords
- silicon backplane
- substrate
- top surface
- led
- array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 88
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 88
- 239000010703 silicon Substances 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000007769 metal material Substances 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims description 63
- 229910052751 metal Inorganic materials 0.000 claims description 63
- 230000002093 peripheral effect Effects 0.000 claims description 13
- 239000012778 molding material Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 description 27
- 238000004519 manufacturing process Methods 0.000 description 18
- 238000003491 array Methods 0.000 description 10
- 238000001465 metallisation Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical group 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
- F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
- F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
- F21S41/141—Light emitting diodes [LED]
- F21S41/151—Light emitting diodes [LED] arranged in one or more lines
- F21S41/153—Light emitting diodes [LED] arranged in one or more lines arranged in a matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/20—Structure, shape, material or disposition of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
- H05B33/145—Arrangements of the electroluminescent material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68372—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support a device or wafer when forming electrical connections thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0233—Structure of the redistribution layers
- H01L2224/02331—Multilayer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0235—Shape of the redistribution layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02379—Fan-out arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02381—Side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/20—Structure, shape, material or disposition of high density interconnect preforms
- H01L2224/22—Structure, shape, material or disposition of high density interconnect preforms of a plurality of HDI interconnects
- H01L2224/221—Disposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92132—Sequential connecting processes the first connecting process involving a build-up interconnect
- H01L2224/92133—Sequential connecting processes the first connecting process involving a build-up interconnect the second connecting process involving a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92132—Sequential connecting processes the first connecting process involving a build-up interconnect
- H01L2224/92135—Sequential connecting processes the first connecting process involving a build-up interconnect the second connecting process involving a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/143—Digital devices
- H01L2924/1433—Application-specific integrated circuit [ASIC]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Led Device Packages (AREA)
- Lighting Device Outwards From Vehicle And Optical Signal (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
Description
この出願は、2020年1月23日に出願された米国非仮出願第16/750,809号、2020年2月18日に出願された欧州特許出願第20157985.1号、2019年12月20日に出願された米国仮出願第62/951,601号、および2019年11月19日に出願された米国仮出願第62/937,629号の利益を主張し、これらの内容は、参照により本明細書に援用される。
Claims (19)
- 頂面と、底面と、側面とを有する、シリコンバックプレーンと、
前記シリコンバックプレーンの前記頂面の上にある金属コネクタのアレイと、
前記シリコンバックプレーンの前記側面を取り囲み、頂面と、底面と、側面とを有する、基板と、
前記シリコンバックプレーンの前記頂面および前記基板の前記頂面の上にある第1の再分配層と、
前記シリコンバックプレーンの前記底面および前記基板の前記底面の上にある第2の再分配層と、
前記第1の再分配層と前記第2の再分配層との間で前記基板を通じて延在し、金属材料で充填される、少なくとも1つのビアとを含む、
システム。 - 前記第1の再分配層は、
少なくとも1つの第1の誘電体層と、
少なくとも1つの第1の金属層と、を含み、
前記少なくとも1つの第1の金属層は、前記シリコンバックプレーンの周辺領域から前記基板の前記側面に向かって延び、少なくとも1つのボンドパッドを形成するように前記少なくとも1つの誘電体層から露出させられる少なくとも一部分を有する、
請求項1に記載のシステム。 - 前記少なくとも1つのボンドパッドに電気的に結合される少なくとも1つの受動コンポーネントを更に含む、請求項2に記載のシステム。
- 前記第2の再分配層は、
少なくとも1つの第2の誘電体層と、
少なくとも1つの第2の金属層と、を含み、
前記少なくとも1つの第2の金属層は、前記シリコンバックプレーンの周辺領域から前記基板の前記側面に向かって延び、少なくとも1つのボンドパッドを形成するように前記少なくとも1つの誘電体層から露出させられる少なくとも一部分を有する、
請求項1に記載のシステム。 - 中央領域において前記シリコンバックプレーンの前記底面に電気的および熱的に結合される金属層を更に含み、前記金属コネクタは、前記第2の再分配層から離間する、請求項4に記載のシステム。
- 前記金属コネクタのアレイは、銅ピラーバンプのアレイである、請求項1に記載のシステム。
- 前記金属コネクタのアレイに電気的に結合される発光ダイオード(LED)アレイを更に含む、請求項1に記載のシステム。
- 前記LEDアレイは、モノリシックLEDアレイである、請求項7に記載のシステム。
- 前記モノリシックLEDアレイは、複数のエミッタを含み、該複数のエミッタの各々は、100μm以下の幅を有する、請求項8に記載のシステム。
- 前記複数のエミッタは、行および列において配置され、隣接する行および列の間のレーンが、20μm以下の幅を有する、請求項9に記載のシステム。
- 前記基板は、成形材料を含む、請求項1に記載のシステム。
- 前記シリコンバックプレーンは、相補型金属酸化物半導体(CMOS)集積回路である、請求項1に記載のシステム。
- 前記シリコンバックプレーンは、特定用途向け集積回路(ASIC)である、請求項1に記載のシステム。
- 少なくとも1つのセンサと、
前記少なくとも1つのセンサに通信的に結合されるコントローラと、
発光ダイオード(LED)駆動装置と、
前記コントローラに通信的に結合され、前記LED駆動装置に電気的に結合される、アクティブヘッドランプと、を含み、該アクティブヘッドランプは、
頂面と、底面と、側面とを有する、シリコンバックプレーンと、
前記シリコンバックプレーンの前記側面を取り囲み、頂面と、底面と、側面とを有する、基板と、
前記シリコンバックプレーンの前記頂面および前記基板の前記頂面の上にあり、少なくとも1つの誘電体層と、少なくとも1つの金属層とを含む、再分配層であって、前記少なくとも1つの金属層は、前記シリコンバックプレーンの周辺領域から前記基板の前記側面に向かって延び、少なくとも1つのボンドパッドを形成するように前記少なくとも1つの誘電体層から露出させられた少なくとも一部分を有する、再分配層と、
前記シリコンバックプレーンの前記頂面にあるLEDアレイと、を含む、
車両ヘッドランプシステム。 - 前記少なくとも1つのセンサ、前記コントローラおよび前記LED駆動装置のうちの少なくとも1つは、少なくとも1つの受動コンポーネントを含み、該少なくとも1つの受動コンポーネントは、前記少なくとも1つのボンドパッドに電気的に結合される、請求項14に記載の車両ヘッドランプシステム。
- 前記アクティブヘッドランプは、前記シリコンバックプレーンの前記底面に電気的および熱的に結合される金属層を更に含み、
当該車両ヘッドランプシステムは、前記金属層に電気的および熱的に結合される回路基板を更に含む、
請求項15に記載の車両ヘッドランプシステム。 - 前記少なくとも1つの受動コンポーネントは、複数の受動コンポーネントを含み、該複数の受動コンポーネントのうちの少なくとも1つは、前記回路基板の上にある、請求項16に記載の車両ヘッドランプシステム。
- 前記LEDアレイは、複数のエミッタを含むモノリシックLEDアレイであり、前記複数のエミッタの各々は、100μm以下の幅を有する、請求項14に記載の車両ヘッドランプシステム。
- 前記複数のエミッタは、行および列において配置され、隣接する行および列の間のレーンが、20μm以下の幅を有する、請求項18に記載の車両ヘッドランプシステム。
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962937629P | 2019-11-19 | 2019-11-19 | |
US62/937,629 | 2019-11-19 | ||
US201962951601P | 2019-12-20 | 2019-12-20 | |
US62/951,601 | 2019-12-20 | ||
US16/750,809 US11156346B2 (en) | 2019-11-19 | 2020-01-23 | Fan out structure for light-emitting diode (LED) device and lighting system |
US16/750,809 | 2020-01-23 | ||
EP20157985 | 2020-02-18 | ||
EP20157985.1 | 2020-02-18 | ||
PCT/US2020/061201 WO2021102093A1 (en) | 2019-11-19 | 2020-11-19 | Fan out structure for light-emitting diode (led) device and lighting system |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2023502245A true JP2023502245A (ja) | 2023-01-23 |
JPWO2021102093A5 JPWO2021102093A5 (ja) | 2023-08-21 |
Family
ID=75981038
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022529112A Pending JP2023502245A (ja) | 2019-11-19 | 2020-11-19 | 発光ダイオードデバイスおよび照明システムのためのファンアウト構造 |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP4062449A1 (ja) |
JP (1) | JP2023502245A (ja) |
KR (2) | KR20230079490A (ja) |
CN (1) | CN114930529B (ja) |
TW (1) | TWI797505B (ja) |
WO (1) | WO2021102093A1 (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007123482A (ja) * | 2005-10-27 | 2007-05-17 | Kyocera Corp | 発光素子用配線基板および発光装置並びに発光素子用配線基板の製造方法 |
JP2009158505A (ja) * | 2007-12-25 | 2009-07-16 | Panasonic Electric Works Co Ltd | 発光装置およびその製造方法 |
JP2012169264A (ja) * | 2011-01-25 | 2012-09-06 | Semiconductor Energy Lab Co Ltd | 発光装置 |
JP2018174355A (ja) * | 2018-08-02 | 2018-11-08 | 日亜化学工業株式会社 | 発光装置 |
JP2019046835A (ja) * | 2017-08-30 | 2019-03-22 | 株式会社沖データ | 半導体発光素子、半導体複合装置、光プリントヘッド、及び画像形成装置 |
WO2019126537A1 (en) * | 2017-12-20 | 2019-06-27 | Lumileds Llc | Segmented led with embedded transistors |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7985970B2 (en) * | 2009-04-06 | 2011-07-26 | Cree, Inc. | High voltage low current surface-emitting LED |
US10290788B2 (en) * | 2009-11-24 | 2019-05-14 | Luminus Devices, Inc. | Systems and methods for managing heat from an LED |
US8883561B2 (en) * | 2011-04-30 | 2014-11-11 | Stats Chippac, Ltd. | Semiconductor device and method of embedding TSV semiconductor die within encapsulant with TMV for vertical interconnect in POP |
TWI511335B (zh) * | 2012-06-08 | 2015-12-01 | Univ Feng Chia | Light emitting diode module |
US20140251658A1 (en) * | 2013-03-07 | 2014-09-11 | Bridge Semiconductor Corporation | Thermally enhanced wiring board with built-in heat sink and build-up circuitry |
KR20160112761A (ko) * | 2015-03-20 | 2016-09-28 | 삼성전자주식회사 | 일체형 몰딩 기판을 포함하는 광원 모듈 및 조명 장치, 및 그 광원 모듈 제조방법 |
CN204641532U (zh) * | 2015-04-01 | 2015-09-16 | 迅驰车业江苏有限公司 | 一种智能式汽车前组合灯 |
KR102346643B1 (ko) * | 2015-06-30 | 2022-01-03 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자, 발광 소자 제조방법 및 발광 모듈 |
TWI611541B (zh) * | 2015-09-07 | 2018-01-11 | 鈺橋半導體股份有限公司 | 具有內建電性隔離件以及防潮蓋之線路板製備方法及其半導體組體 |
US10665578B2 (en) * | 2015-09-24 | 2020-05-26 | Apple Inc. | Display with embedded pixel driver chips |
CN107580385A (zh) * | 2017-08-25 | 2018-01-12 | 成都华科威电子科技有限公司 | 一种汽车前照灯控制*** |
-
2020
- 2020-11-19 KR KR1020237017638A patent/KR20230079490A/ko not_active Application Discontinuation
- 2020-11-19 WO PCT/US2020/061201 patent/WO2021102093A1/en unknown
- 2020-11-19 EP EP20821566.5A patent/EP4062449A1/en active Pending
- 2020-11-19 TW TW109140562A patent/TWI797505B/zh active
- 2020-11-19 JP JP2022529112A patent/JP2023502245A/ja active Pending
- 2020-11-19 KR KR1020227020757A patent/KR102537887B1/ko active IP Right Grant
- 2020-11-19 CN CN202080093660.2A patent/CN114930529B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007123482A (ja) * | 2005-10-27 | 2007-05-17 | Kyocera Corp | 発光素子用配線基板および発光装置並びに発光素子用配線基板の製造方法 |
JP2009158505A (ja) * | 2007-12-25 | 2009-07-16 | Panasonic Electric Works Co Ltd | 発光装置およびその製造方法 |
JP2012169264A (ja) * | 2011-01-25 | 2012-09-06 | Semiconductor Energy Lab Co Ltd | 発光装置 |
JP2019046835A (ja) * | 2017-08-30 | 2019-03-22 | 株式会社沖データ | 半導体発光素子、半導体複合装置、光プリントヘッド、及び画像形成装置 |
WO2019126537A1 (en) * | 2017-12-20 | 2019-06-27 | Lumileds Llc | Segmented led with embedded transistors |
JP2018174355A (ja) * | 2018-08-02 | 2018-11-08 | 日亜化学工業株式会社 | 発光装置 |
Also Published As
Publication number | Publication date |
---|---|
CN114930529A (zh) | 2022-08-19 |
CN114930529B (zh) | 2023-09-01 |
EP4062449A1 (en) | 2022-09-28 |
TWI797505B (zh) | 2023-04-01 |
KR20220092632A (ko) | 2022-07-01 |
WO2021102093A1 (en) | 2021-05-27 |
TW202137586A (zh) | 2021-10-01 |
KR20230079490A (ko) | 2023-06-07 |
KR102537887B1 (ko) | 2023-05-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11156346B2 (en) | Fan out structure for light-emitting diode (LED) device and lighting system | |
JP7286884B2 (ja) | 金属インレー及びボトムコンタクトを有する発光デバイスを製造する方法 | |
TWI774130B (zh) | 用於發光二極體(led)裝置及照明系統之扇出結構 | |
JP2023508678A (ja) | フリップチップ相互接続された発光ダイオードパッケージアセンブリ | |
KR102537887B1 (ko) | 발광 다이오드(led) 디바이스 및 조명 시스템을 위한 팬 아웃 구조 | |
TWI824197B (zh) | 製造led照明系統之方法 | |
EP4118689A1 (en) | Method of manufacturing an augmented led array assembly | |
US11664347B2 (en) | Ceramic carrier and build up carrier for light-emitting diode (LED) array | |
KR102572731B1 (ko) | 금속 인레이 및 최상부 콘택들을 갖는 발광 디바이스 | |
JP2023536241A (ja) | 金属インレーおよび頂面コンタクトを備える発光デバイス |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230810 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230810 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20230810 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230912 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231212 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20231226 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240426 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20240508 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20240531 |