JP2023048697A5 - - Google Patents
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- JP2023048697A5 JP2023048697A5 JP2021158152A JP2021158152A JP2023048697A5 JP 2023048697 A5 JP2023048697 A5 JP 2023048697A5 JP 2021158152 A JP2021158152 A JP 2021158152A JP 2021158152 A JP2021158152 A JP 2021158152A JP 2023048697 A5 JP2023048697 A5 JP 2023048697A5
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- 239000002904 solvent Substances 0.000 claims description 72
- 239000000758 substrate Substances 0.000 claims description 68
- 239000007788 liquid Substances 0.000 claims description 50
- 239000005871 repellent Substances 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 20
- 238000001035 drying Methods 0.000 claims description 19
- 230000007246 mechanism Effects 0.000 claims description 17
- 238000012545 processing Methods 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 11
- 230000002940 repellent Effects 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 9
- 239000012528 membrane Substances 0.000 claims 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 6
- 230000032258 transport Effects 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- JOOMLFKONHCLCJ-UHFFFAOYSA-N N-(trimethylsilyl)diethylamine Chemical compound CCN(CC)[Si](C)(C)C JOOMLFKONHCLCJ-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 1
- 101100441413 Caenorhabditis elegans cup-15 gene Proteins 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Description
本発明の実施形態の基板乾燥装置は、基板を加熱する加熱部と、前記基板の被処理面上に第１の揮発性溶剤を供給する第１の揮発性溶剤供給部と、前記基板の被処理面上に、気化する際の表面張力が前記第１の揮発性溶剤よりも小さい第２の揮発性溶剤を供給する第２の揮発性溶剤供給部と、前記加熱部、前記第１の揮発性溶剤供給部及び前記第２の揮発性溶剤供給部が収容され、被処理面上に処理液による液膜が形成された状態の前記基板が搬入される乾燥室と、前記乾燥室に搬入された前記基板を受け取る支持部と、前記支持部に支持された前記基板を回転させる駆動機構と、前記加熱部と、前記第１の揮発性溶剤供給部と、前記第２の揮発性溶剤供給部と、前記駆動機構とを制御する制御装置と、を備え、前記制御装置は、前記第１の揮発性溶剤供給部から前記第１の揮発性溶剤を供給させることにより、前記基板の被処理面上に形成された前記処理液による液膜を前記第１の揮発性溶剤の液膜へ置換させ、前記第２の揮発性溶剤供給部から、撥水化膜を形成する撥水化剤を含めて前記第２の揮発性溶剤を供給させることにより、前記基板の被処理面上に形成された前記第１の揮発性溶剤の液膜を前記第２の揮発性溶剤の液膜へ置換させるとともに、前記基板の被処理面に前記撥水化膜を形成させ、前記加熱部に前記基板を加熱させることにより、前記第２の揮発性溶剤の液膜と前記基板との間に気層を生じさせ、前記駆動機構に前記基板を回転させることにより、前記第２の揮発性溶剤の液膜を遠心力により排出させる。 A substrate drying apparatus according to an embodiment of the present invention includes a heating section for heating a substrate, a first volatile solvent supply section for supplying a first volatile solvent onto a surface to be processed of the substrate, and a second volatile solvent supply unit that supplies a second volatile solvent having a lower surface tension than the first volatile solvent when vaporized onto the surface to be treated; the heating unit; a drying chamber in which the volatile solvent supply unit and the second volatile solvent supply unit are accommodated and the substrate having a liquid film of the processing liquid formed on the surface to be processed is loaded; and the substrate is loaded into the drying chamber. a support for receiving the substrate held thereon; a driving mechanism for rotating the substrate supported by the support; the heating unit; the first volatile solvent supply unit; and the second volatile solvent supply unit. and a control device for controlling the drive mechanism, wherein the control device supplies the first volatile solvent from the first volatile solvent supply unit to cause the substrate to be processed. The liquid film of the treatment liquid formed on the surface is replaced with the liquid film of the first volatile solvent, and a water repellent agent for forming a water repellent film is supplied from the second volatile solvent supply unit. and replacing the liquid film of the first volatile solvent formed on the surface to be processed of the substrate with the liquid film of the second volatile solvent. At the same time, the water-repellent film is formed on the surface to be processed of the substrate, and the substrate is heated by the heating unit, thereby forming an air layer between the liquid film of the second volatile solvent and the substrate. By causing the drive mechanism to rotate the substrate, the liquid film of the second volatile solvent is discharged by centrifugal force .
本発明の実施形態の基板乾燥方法は、処理液による液膜が形成され、支持部に支持された基板を駆動機構により回転させながら、第１の揮発性溶剤供給部からの第１の揮発性溶剤の供給により前記処理液による液膜を前記第１の揮発性溶剤の液膜へ置換し、第２の揮発性溶剤供給部から、気化する際の表面張力が前記第１の揮発性溶剤よりも小さい第２の揮発性溶剤を、撥水化膜を形成する撥水化剤を含めて供給することにより、前記第１の揮発性溶剤の液膜を前記第２の揮発性溶剤の液膜に置換するとともに、前記基板に撥水化膜を形成させ、加熱部による前記基板の加熱により、前記第２の揮発性溶剤の液膜と前記基板との間に気層を生じさせ、前記駆動機構による前記基板の回転により、前記第２の揮発性溶剤の液膜を遠心力により排出させる。 In the substrate drying method according to the embodiment of the present invention, the first volatile solvent supplied from the first volatile solvent supply unit is rotated by the drive mechanism while the substrate on which the liquid film of the treatment liquid is formed and supported by the support unit is rotated. By supplying a solvent, the liquid film of the treatment liquid is replaced with the liquid film of the first volatile solvent, and from the second volatile solvent supply unit , the surface tension when vaporizing is the same as that of the first volatile solvent. By supplying a second volatile solvent smaller than A water-repellent film is formed on the substrate , and an air layer is generated between the liquid film of the second volatile solvent and the substrate by heating the substrate with a heating unit. and the substrate is rotated by the drive mechanism to discharge the liquid film of the second volatile solvent by centrifugal force .
基板処理装置１は、処理装置１１０、洗浄装置１２０、搬送装置２００、乾燥装置３００、制御装置４００を含む。処理装置１１０は、例えば、回転する基板Ｗに、第１の処理液（例えば、リン酸水溶液、フッ酸及び硝酸の混合液、酢酸、硫酸及び過酸化水素水の混合液（ＳＰＭ：Sulfuric acid hydrogen Peroxide Mixture）等）を供給することによって、不要な膜を除去して回路パターンを残すエッチング装置である。洗浄装置１２０は、エッチング装置でエッチング処理された基板Ｗを、洗浄液（第２の処理液）により洗浄する。搬送装置２００は、バッファユニット１ｄと各チャンバ１ａとの間、各チャンバ１ａの間で基板Ｗを搬送する。例えば、搬送装置２００は、処理装置１１０において処理済の基板Ｗを洗浄装置１２０に搬送し、洗浄装置１２０において洗浄された基板Ｗを乾燥装置３００に搬送する。乾燥装置（基板乾燥装置）３００は、洗浄液により洗浄された基板Ｗを回転させながら加熱することにより、乾燥処理を行う。制御装置４００は、上記の各装置を制御する。 The substrate processing apparatus 1 includes a processing apparatus 110 , a cleaning apparatus 120 , a transfer apparatus 200 , a drying apparatus 300 and a control apparatus 400 . The processing apparatus 110 applies, for example, a first processing liquid (eg, an aqueous solution of phosphoric acid, a mixture of hydrofluoric acid and nitric acid, a mixture of acetic acid, sulfuric acid, and hydrogen peroxide (SPM) to a rotating substrate W). It is an etching device that removes unnecessary films and leaves circuit patterns by supplying a peroxide mixture). The cleaning device 120 cleans the substrate W etched by the etching device with a cleaning liquid (second processing liquid). The transport device 200 transports the substrate W between the buffer unit 1d and each chamber 1a and between each chamber 1a. For example, the transport device 200 transports the substrate W processed in the processing device 110 to the cleaning device 120 and transports the substrate W cleaned in the cleaning device 120 to the drying device 300 . The drying device (substrate drying device) 300 performs a drying process by heating the substrate W cleaned with the cleaning liquid while rotating it. The control device 400 controls each device described above.
また、本実施形態においては、第２の揮発性溶剤を用いる。第２の揮発性溶剤は、第１の揮発性溶剤よりも、気化する際の表面張力が小さい溶剤である。また、第２の揮発性溶剤の気化の温度は、第１の揮発性溶剤よりも高い。このような第２の揮発性溶剤としては、ＰＧＭＥＡ（プロピレングリコールモノエチルエーテルアセテート）を使用することができる。また、第２の揮発性溶剤は、撥水化剤を含むものを用いる。撥水化剤は、基板Ｗの被処理面の水酸基（－ＯＨ）を、官能基（例えば、－ＣＨ３、Ｃ２Ｈ５）へ置換して撥水化膜（Ｓｉ－Ｏ－Ｒ（Ｒ：官能基））を形成可能な修飾剤である。例えば、撥水化剤としては、シランカップリング剤であるＨＭＤＳ（ヘキサメチルジシラザン）を用いることができる。以下の説明での第２の揮発性溶剤の供給は、撥水化剤を含む第２の揮発性溶剤を供給する態様で行われる。 Moreover, in this embodiment, a second volatile solvent is used. The second volatile solvent is a solvent that has a smaller surface tension when vaporized than the first volatile solvent. Also, the vaporization temperature of the second volatile solvent is higher than that of the first volatile solvent. As such a second volatile solvent, PGMEA (propylene glycol monoethyl ether acetate) can be used. Also, the second volatile solvent used contains a water-repellent agent. The water repellent agent replaces the hydroxyl groups (--OH) on the surface to be treated of the substrate W with functional groups (eg, --CH3, C2H5) to form a water-repellent film (Si--O--R (R: functional group)). ) is a modifier capable of forming For example, HMDS (hexamethyldisilazane), which is a silane coupling agent, can be used as the water repellent agent. The supply of the second volatile solvent in the following description is performed in a mode of supplying the second volatile solvent containing the water repellent agent.
このため、図７（Ｃ）に示すように、パターンＰ上の液膜Ｆは気層Ｇによって瞬時にパターンＰから浮き上がり、図７（Ｄ）に示すように、直ちに液玉化し（ライデンフロスト現象）、撥水化膜Ｒは基板Ｗの被処理面のＳｉと－ＣＨｘの結合が断ち切られて除去される。このように、液膜Ｆが液玉化してから、撥水化膜Ｒが基板Ｗから除去されるが、ランプ３６ａによって、瞬間的に（数秒で）撥水化膜Ｒが気化する３００℃を達成できるので、液玉化と撥水化膜Ｒの除去は、ほぼ同時に起こるものとして考えることができる。図中、黒塗りの矢印で示すように、液膜Ｆには回転による遠心力がかかっており、生成された各液玉は、遠心力によって基板Ｗ上から飛ばされるので、図７（Ｅ）に示すように、基板Ｗの被処理面は乾燥する。なお、上記のように、Ｓｉと結合が切れた官能基が酸素と結びつくことによって、Ｈ２ＯやＣＯ２となり、撥水化剤であるシランカップリング剤が蒸発するので、乾燥室３１内の雰囲気は、酸素を含んでいることが好ましい。 Therefore, as shown in FIG. 7(C), the liquid film F on the pattern P instantly rises from the pattern P due to the air layer G, and as shown in FIG. ), the water-repellent film R is removed by breaking the bond between Si and —CHx on the surface of the substrate W to be processed. In this way, the water-repellent film R is removed from the substrate W after the liquid film F turns into a liquid droplet. Since it can be achieved, it can be considered that the formation of liquid droplets and the removal of the water-repellent film R occur almost simultaneously. As indicated by the black arrows in the figure, centrifugal force is applied to the liquid film F due to rotation, and each generated liquid droplet is blown off from the substrate W by the centrifugal force. , the surface of the substrate W to be processed is dried. As described above, the functional groups that have broken bonds with Si combine with oxygen to form H2O and CO2, and the silane coupling agent, which is a water repellent agent, evaporates. It preferably contains oxygen.
（変形例）
（１）第１の揮発性溶剤は、ＩＰＡには限定されない。例えば、ＨＦＥ（ハイドロフルオロエーテル）等を用いることができる。撥水化剤としてのシランカップリング剤は、ＨＭＤＳには限定されない。例えば、ＴＭＳＤＥＡ（トリメチルシリルジエチルアミン）等を用いることができる。第２の揮発性溶剤も、上記のＰＧＭＥＡには限定されない。例えば、ＩＰＡを用いてもよい。
(Modification)
(1) The first volatile solvent is not limited to IPA. For example, HFE (hydrofluoroether) or the like can be used. A silane coupling agent as a water repellent agent is not limited to HMDS. For example, TMSDEA ( trimethylsilyldiethylamine ) or the like can be used. The second volatile solvent is also not limited to the above PGMEA. For example, IPA may be used.
１ 基板処理装置
１１ 洗浄室
１１ａ 開口
１１ｂ 扉
１２ 支持部
１３ 回転機構
１４ カップ
１５ 供給部
１５ａ ノズル
１５ｂ 移動機構
２０ ハンドリング装置
２１ ロボットハンド
２２ 移動機構
３１ 乾燥室
３１ａ 開口
３１ｂ 扉
３２ 支持部
３２ａ 回転テーブル
３２ｂ 保持部材
３２ｃ 回転軸
３３ 駆動機構
３３ａ 回転部
３３ｂ 昇降部
３４ 第１の揮発性溶剤供給部
３４ａ、３５ａ ノズル
３４ｂ、３５ｂ 揺動アーム
３４ｃ、３５ｃ 揺動機構
３５ 第２の揮発性溶剤供給部
３６ 加熱部
３６ａ ランプ
３６ｂ 窓部
３７ カップ
３８ 測定部
３８ａ 検出部
３８ｂ 揺動アーム
３８ｃ 揺動機構
４１ 機構制御部
４２ 膜厚解析部
４３ 加熱制御部
１００ 洗浄装置
２００ 搬送装置
３００ 乾燥装置
４００ 制御装置
1 substrate processing apparatus 11 cleaning chamber 11a opening 11b door 12 support section 13 rotating mechanism 14 cup 15 supply section 15a nozzle 15b moving mechanism 20 handling device 21 robot hand 22 moving mechanism 31 drying chamber 31a opening 31b door
3 2 Supporting portion 32a Rotating table 32b Holding member 32c Rotating shaft 33 Driving mechanism 33a Rotating portion 33b Lifting portion 34 First volatile solvent supply portions 34a, 35a Nozzles 34b, 35b Swing arms 34c, 35c Swing mechanism 35 Second Volatile solvent supply unit 36 Heating unit 36a Lamp
36b window
37 cup 38 measurement unit 38a detection unit 38b swing arm 38c swing mechanism 41 mechanism control unit 42 film thickness analysis unit 43 heating control unit 100 cleaning device 200 conveying device 300 drying device 400 control device
Claims (5)
前記基板の被処理面上に第１の揮発性溶剤を供給する第１の揮発性溶剤供給部と、
前記基板の被処理面上に、気化する際の表面張力が前記第１の揮発性溶剤よりも小さい第２の揮発性溶剤を供給する第２の揮発性溶剤供給部と、
前記加熱部、前記第１の揮発性溶剤供給部及び前記第２の揮発性溶剤供給部が収容され、被処理面上に処理液による液膜が形成された状態の前記基板が搬入される乾燥室と、
前記乾燥室に搬入された前記基板を受け取る支持部と、
前記支持部に支持された前記基板を回転させる駆動機構と、
前記加熱部と、前記第１の揮発性溶剤供給部と、前記第２の揮発性溶剤供給部と、前記駆動機構とを制御する制御装置と、
を備え、
前記制御装置は、
前記第１の揮発性溶剤供給部から前記第１の揮発性溶剤を供給させることにより、前記基板の被処理面上に形成された前記処理液による液膜を前記第１の揮発性溶剤の液膜へ置換させ、
前記第２の揮発性溶剤供給部から、撥水化膜を形成する撥水化剤を含めて前記第２の揮発性溶剤を供給させることにより、前記基板の被処理面上に形成された前記第１の揮発性溶剤の液膜を前記第２の揮発性溶剤の液膜へ置換させるとともに、前記基板の被処理面に前記撥水化膜を形成させ、
前記加熱部に前記基板を加熱させることにより、前記第２の揮発性溶剤の液膜と前記基板との間に気層を生じさせ、前記駆動機構に前記基板を回転させることにより、前記第２の揮発性溶剤の液膜を遠心力により排出させる、
ことを特徴とする基板乾燥装置。 a heating unit that heats the substrate;
a first volatile solvent supply unit that supplies a first volatile solvent onto the surface to be processed of the substrate;
a second volatile solvent supply unit that supplies a second volatile solvent having a lower surface tension than the first volatile solvent when vaporized onto the surface to be processed of the substrate;
drying in which the heating unit, the first volatile solvent supply unit, and the second volatile solvent supply unit are accommodated, and the substrate is carried in a state in which a liquid film of the processing liquid is formed on the surface to be processed; room and
a support for receiving the substrate carried into the drying chamber;
a drive mechanism for rotating the substrate supported by the support;
a control device that controls the heating unit, the first volatile solvent supply unit, the second volatile solvent supply unit, and the driving mechanism;
with
The control device is
By supplying the first volatile solvent from the first volatile solvent supply unit, the liquid film of the processing liquid formed on the surface to be processed of the substrate is replaced by the liquid of the first volatile solvent. replaced by a membrane ,
By supplying the second volatile solvent including a water repellent agent for forming a water repellent film from the second volatile solvent supply unit, the volatile solvent formed on the surface to be processed of the substrate is replacing the liquid film of the first volatile solvent with the liquid film of the second volatile solvent, and forming the water-repellent film on the surface to be processed of the substrate;
By causing the heating unit to heat the substrate, an air layer is generated between the liquid film of the second volatile solvent and the substrate, and by causing the drive mechanism to rotate the substrate, the second The liquid film of the volatile solvent of is discharged by centrifugal force,
A substrate drying apparatus characterized by:
前記制御装置は、前記測定部による測定結果の膜厚が所定のしきい値の範囲内にあると判定した場合に、前記加熱部による加熱を開始させることを特徴とする請求項２記載の基板乾燥装置。 a measuring unit for measuring the film thickness of the liquid film of the second volatile solvent on the surface to be processed of the substrate supported by the supporting unit;
3. The substrate according to claim 2, wherein the controller causes the heating unit to start heating when it is determined that the film thickness measured by the measuring unit is within a predetermined threshold range. drying equipment.
前記処理装置により処理済の前記基板を回転させながら第２の処理液を供給することにより洗浄する洗浄装置と、
請求項１乃至３のいずれかに記載の基板乾燥装置と、
前記洗浄装置において洗浄された前記基板を、前記洗浄装置で供給された前記第２の処理液による液膜が形成された状態で搬出し、前記基板乾燥装置に搬入する搬送装置と、
を有することを特徴とする基板処理装置。 a processing apparatus for processing the substrate by supplying a first processing liquid while rotating the substrate;
a cleaning device that cleans the substrate processed by the processing device by supplying a second processing liquid while rotating the substrate;
A substrate drying apparatus according to any one of claims 1 to 3;
a conveying device that unloads the substrate cleaned by the cleaning device in a state where a liquid film is formed by the second processing liquid supplied by the cleaning device, and carries the substrate into the substrate drying device;
A substrate processing apparatus comprising:
第２の揮発性溶剤供給部から、気化する際の表面張力が前記第１の揮発性溶剤よりも小さい第２の揮発性溶剤を、撥水化膜を形成する撥水化剤を含めて供給することにより、前記第１の揮発性溶剤の液膜を前記第２の揮発性溶剤の液膜に置換するとともに、前記基板に撥水化膜を形成させ、
加熱部による前記基板の加熱により、前記第２の揮発性溶剤の液膜と前記基板との間に気層を生じさせ、前記駆動機構による前記基板の回転により、前記第２の揮発性溶剤の液膜を遠心力により排出させる、
ことを特徴とする基板乾燥方法。 A liquid film of the treatment liquid is formed, and the liquid film of the treatment liquid is formed by supplying the first volatile solvent from the first volatile solvent supply part while rotating the substrate supported by the supporting part by the driving mechanism. replacing the liquid film of the first volatile solvent,
A second volatile solvent having a surface tension lower than that of the first volatile solvent when vaporized is supplied from the second volatile solvent supply part , including a water repellent agent for forming a water repellent film. by supplying the liquid film of the first volatile solvent to the liquid film of the second volatile solvent and forming a water-repellent film on the substrate;
By heating the substrate by the heating unit , a gas layer is generated between the liquid film of the second volatile solvent and the substrate , and by rotating the substrate by the drive mechanism, the second volatile solvent is generated. Discharge the liquid film of the solvent by centrifugal force,
A substrate drying method characterized by:
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| JP2021158152A JP7504850B2 (en) | 2021-09-28 | 2021-09-28 | Substrate drying apparatus, substrate processing apparatus, and substrate drying method |
| KR1020220108178A KR20230045537A (en) | 2021-09-28 | 2022-08-29 | Substrate drying equipment, substrate processing equipment and substrate drying method |
| CN202211158535.2A CN115881587A (en) | 2021-09-28 | 2022-09-22 | Substrate drying apparatus, substrate processing apparatus, and substrate drying method |
| TW111136084A TWI808006B (en) | 2021-09-28 | 2022-09-23 | Substrate drying device, substrate processing device, and substrate drying method |
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| JP2021158152A JP7504850B2 (en) | 2021-09-28 | 2021-09-28 | Substrate drying apparatus, substrate processing apparatus, and substrate drying method |
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| JP2008034779A (en) | 2006-06-27 | 2008-02-14 | Dainippon Screen Mfg Co Ltd | Method and equipment for processing substrate |
| JP5662081B2 (en) | 2010-08-20 | 2015-01-28 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing method and substrate processing apparatus |
| JP2013118347A (en) | 2010-12-28 | 2013-06-13 | Central Glass Co Ltd | Cleaning method of wafer |
| JP6524573B2 (en) | 2014-09-30 | 2019-06-05 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing method and substrate processing apparatus |
| JP6444698B2 (en) * | 2014-11-17 | 2018-12-26 | 東芝メモリ株式会社 | Substrate processing apparatus and substrate processing method |
| JP6687436B2 (en) | 2015-04-30 | 2020-04-22 | 芝浦メカトロニクス株式会社 | Substrate processing apparatus and substrate processing method |
| JP6563762B2 (en) | 2015-09-29 | 2019-08-21 | 芝浦メカトロニクス株式会社 | Substrate processing apparatus and substrate processing method |
| JP6728009B2 (en) * | 2016-09-26 | 2020-07-22 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing method and substrate processing apparatus |
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