JP2022518411A - 電界誘導フォトレジストパターン形成工程のためのフィルム構造 - Google Patents
電界誘導フォトレジストパターン形成工程のためのフィルム構造 Download PDFInfo
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- JP2022518411A JP2022518411A JP2021540445A JP2021540445A JP2022518411A JP 2022518411 A JP2022518411 A JP 2022518411A JP 2021540445 A JP2021540445 A JP 2021540445A JP 2021540445 A JP2021540445 A JP 2021540445A JP 2022518411 A JP2022518411 A JP 2022518411A
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Images
Classifications
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- G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (15)
- 基板上に配置されたフィルム構造、及び
前記フィルム構造内に形成された複数の開口部であって、約1nmと2nmとの間の限界寸法均一性を有する、前記基板にわたり形成された複数の開口部を備える、デバイス構造。 - 前記開口部は、約3nmと約5nmとの間の線幅粗さ(LWR)を有する、請求項1に記載のデバイス構造。
- 前記フィルム構造内の前記開口部は、前記フィルム構造をパターニングしながら、下層を利用することによってパターニングされ、前記下層は、スルホン酸、スルホン酸塩、及びそれらの混合物から構成される群から選択された酸剤を有する、請求項1に記載のデバイス構造。
- 基板を処理する方法であって、
基板上に配置された多層上に光酸発生剤を含むフォトレジスト層を付加することであって、前記多層は、有機材料、無機材料、又は有機材料と無機材料との混合物から形成された下層を含む、フォトレジスト層を付加すること、
フォトマスクによって保護されていない前記フォトレジスト層の第1の部分を、リソグラフィ露光工程において放射線光に露光すること、及び
電界又は磁界を印加して、前記光酸発生剤から生成された光酸の移動を、実質的に垂直方向に変化させることを含む、方法。 - 前記フォトレジスト層及び前記下層をベーキングすること、及び
前記フォトレジスト層及び前記下層をベーキングしながら、電界又は磁界を印加することを更に含む、請求項4に記載の方法。 - 前記電界又は前記磁界は、前記リソグラフィ露光工程中に前記フォトレジスト層に印加される、請求項4に記載の方法。
- 前記電界を印加することは、
前記基板上に配置された前記フォトレジスト層及び前記下層に、前ベーキング工程を実行することを更に含み、前記電界又は前記磁界は、前記前ベーキング工程中に前記フォトレジスト層に印加される、請求項5に記載の方法。 - 前記下層は、有機ポリマー溶媒内の1以上の添加剤を含む、請求項4に記載の方法。
- 前記添加剤は、酸剤、塩基剤、接着促進剤、及び感光性成分から構成される群から選択される、請求項8に記載の方法。
- 前記添加剤は、スルホン酸、スルホン酸塩、及びそれらの混合物から構成される群から選択される、請求項9に記載の方法。
- 前記有機ポリマー溶媒は、プロピレングリコールメチルエーテルアセテート(PGMEA)、乳酸エチル(EL)、プロピレングリコールメチルエーテル(PGME)、プロピレングリコールn‐プロピルエーテル(PnP)、シクロヘキサノン、アセトン、ガンマブチロラクトン(GBL)、及びそれらの混合物から構成される群から選択される、請求項8に記載の方法。
- 前記多層は、前記下層の下且つ前記基板の上に配置されたハードマスク層を更に含む、請求項4に記載の方法。
- 前記ハードマスク層は、酸化ケイ素、窒化ケイ素、酸窒化ケイ素、炭化ケイ素、アモルファスカーボン、ドープされたアモルファスカーボン、TEOS酸化物、USG、SOG、有機ケイ素、酸化物含有材料窒化チタン、酸窒化チタン、それらの組み合わせから構成される群から選択される、請求項12に記載の方法。
- 前記基板上に前記多層をパターニングすること、及び
前記多層内に複数の開口部を形成することを更に含み、前記基板にわたり形成される前記開口部は、約1nmと2nmとの間の限界寸法均一性を有する、請求項4に記載の方法。 - 前記開口部は、約3nmと約5nmの間の線幅粗さ(LWR)を有する、請求項14に記載の方法。
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PCT/US2019/055863 WO2020149903A1 (en) | 2019-01-18 | 2019-10-11 | A film structure for electric field guided photoresist patterning process |
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TW202028879A (zh) | 2020-08-01 |
CN113196452A (zh) | 2021-07-30 |
TW202401171A (zh) | 2024-01-01 |
KR20210096302A (ko) | 2021-08-04 |
TWI830683B (zh) | 2024-01-21 |
US20200233307A1 (en) | 2020-07-23 |
TWI814921B (zh) | 2023-09-11 |
WO2020149903A1 (en) | 2020-07-23 |
US20230229089A1 (en) | 2023-07-20 |
US11650506B2 (en) | 2023-05-16 |
US11880137B2 (en) | 2024-01-23 |
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