JP2022060680A - 有機膜形成用材料、半導体装置製造用基板、有機膜の形成方法、パターン形成方法、及び有機膜形成用化合物 - Google Patents
有機膜形成用材料、半導体装置製造用基板、有機膜の形成方法、パターン形成方法、及び有機膜形成用化合物 Download PDFInfo
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Images
Classifications
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C07D519/00—Heterocyclic compounds containing more than one system of two or more relevant hetero rings condensed among themselves or condensed with a common carbocyclic ring system not provided for in groups C07D453/00 or C07D455/00
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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Abstract
Description
有機膜形成用材料であって、
(A)下記一般式(1A)で示される有機膜形成用化合物、及び(B)有機溶剤
を含有する有機膜形成用材料を提供する。
有機膜形成用材料であって、
(A)下記一般式(1A)で示される有機膜形成用化合物、及び(B)有機溶剤
を含有するものである有機膜形成用材料である。
本発明の有機膜形成用の化合物は、下記一般式(1A)で示される有機膜形用化合物である。
本発明の有機膜形成用化合物を得る手段としては、下記に示されるテトラカルボン酸二無水物とアニリン誘導体との反応によりアミド酸化合物(STEP1)を得たのち、熱的または化学的イミド化(STEP2)することにより合成することが出来る。このときアミド酸化合物を合成する際に用いるテトラカルボン酸二無水物、アニリン誘導体は単独または2種以上用いることもできる。これらは要求される特性に応じて適宜選択し組み合わせることができる。下記式中のW1、R1、n1、n2は先記と同じである。
また、本発明では、有機膜形成用材料であって、(A)上述の(1A)で示される本発明の有機膜形成用化合物及び(B)有機溶剤を含有する有機膜形成用材料(有機膜形成用組成物)を提供する。なお、本発明の有機膜形成用材料において、上述の本発明の有機膜形成用化合物は、1種を単独で又は2種以上を組み合わせて用いることができる。
また、本発明では、基板上に、上記の有機膜形成用材料が硬化した有機膜が形成されたものである半導体装置製造用基板を提供する。
[ケイ素含有レジスト中間膜を用いた3層レジスト法]
本発明では、被加工体上に上述の本発明の有機膜形成用材料を用いて有機膜を形成し、該有機膜の上にケイ素原子を含有するケイ素含有レジスト中間膜材料を用いてケイ素含有レジスト中間膜を形成し、該ケイ素含有レジスト中間膜の上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして上記ケイ素含有レジスト中間膜にエッチングでパターンを転写し、該パターンが転写されたケイ素含有レジスト中間膜をマスクにして上記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして上記被加工体にエッチングでパターンを転写するパターン形成方法を提供する。
また、本発明では、被加工体上に上述の本発明の有機膜形成用材料を用いて有機膜を形成し、該有機膜の上にケイ素原子を含有するレジスト中間膜材料を用いてケイ素含有レジスト中間膜を形成し、該ケイ素含有レジスト中間膜の上に有機反射防止膜を形成し、該有機反射防止膜上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして上記有機反射防止膜と上記ケイ素含有レジスト中間膜にドライエッチングでパターンを転写し、該パターンが転写されたケイ素含有レジスト中間膜をマスクにして上記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして上記被加工体にエッチングでパターンを転写するパターン形成方法を提供する。
また、本発明では、上述の本発明の有機膜形成用材料を用いた3層レジスト法によるパターン形成方法として、被加工体上に上述の本発明の有機膜形成用材料を用いて有機膜を形成し、該有機膜の上にケイ素酸化膜、ケイ素窒化膜、ケイ素酸化窒化膜、チタン酸化膜及びチタン窒化膜から選ばれる無機ハードマスクを形成し、該無機ハードマスクの上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記無機ハードマスクにエッチングでパターンを転写し、該パターンが転写された無機ハードマスクをマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写するパターン形成方法を提供する。
また、本発明では、上述の本発明の有機膜形成用材料を用いた4層レジスト法によるパターン形成方法として、被加工体上に上述の本発明の有機膜形成用材料を用いて有機膜を形成し、該有機膜の上にケイ素酸化膜、ケイ素窒化膜、ケイ素酸化窒化膜、チタン酸化膜及びチタン窒化膜から選ばれる無機ハードマスクを形成し、該無機ハードマスクの上に有機反射防止膜を形成し、該有機反射防止膜上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記有機反射防止膜と前記無機ハードマスクにエッチングでパターンを転写し、該パターンが転写された無機ハードマスクをマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写するパターン形成方法を提供する。
(A1):Mw=950、Mw/Mn=1.01
(A2):Mw=900、Mw/Mn=1.00
(A3):Mw=880、Mw/Mn=1.00
(A4):Mw=1120、Mw/Mn=1.03
(A5):Mw=840、Mw/Mn=1.01
(A6):Mw=820、Mw/Mn=1.00
(R1):Mw=830、Mw/Mn=1.01
(R2):Mw=890、Mw/Mn=1.03
(R3):Mw=850、Mw/Mn=1.01
上記化合物(A1)~(A6)および(R1)~(R3)、高沸点溶剤として(S1)1,6-ジアセトキシヘキサン:沸点260℃、(S2)γ-ブチロラクトン:沸点204℃および(S3)トリプロピレングリコールモノメチルエーテル:沸点242℃を、プロピレングリコールモノメチルエーテルアセテート(PGMEA)又はシクロヘキサノン(CyHO)、FC-4430(住友スリーエム(株)製)0.1質量%を含む溶媒中に表4に示す割合で溶解させ、0.1μmのフッ素樹脂製のフィルターで濾過することによって有機膜形成用材料(UDL-1~9、比較例UDL-1~3)をそれぞれ調製した。
上記で調製した有機膜形成用材料(UDL-1~9、比較UDL-1~3)をシリコン基板上に塗布し、酸素濃度が0.2%以下に管理された窒素気流下450℃で60秒間ベークした後、膜厚を測定し、その上にPGMEA溶媒をディスペンスし、30秒間放置しスピンドライ、100℃で60秒間ベークしてPGMEAを蒸発させ、膜厚を測定しPGMEA処理前後の膜厚差を求めた。
上記の有機膜形成用材料(UDL-1~9、比較UDL-1~3)をそれぞれシリコン基板上に塗布し、大気中、180℃で焼成して200nmの塗布膜を形成し、膜厚を測定した。この基板を更に酸素濃度が0.2%以下に管理された窒素気流下450℃で10分間ベークして膜厚を測定した。これらの結果を表6に示す。
図3のように、上記の有機膜形成用材料(UDL-1~9、比較UDL-1~3)をそれぞれ、密集ホールパターン(ホール直径0.16μm、ホール深さ0.50μm、隣り合う二つのホールの中心間の距離0.32μm)を有するSiO2ウエハー基板上に塗布し、ホットプレートを用いて酸素濃度が0.2%以下に管理された窒素気流下450℃で60秒間ベークし、有機膜8を形成した。使用した基板は図3(G)(俯瞰図)及び(H)(断面図)に示すような密集ホールパターンを有する下地基板7(SiO2ウエハー基板)である。得られた各ウエハー基板の断面形状を、走査型電子顕微鏡(SEM)を用いて観察し、ホール内部にボイド(空隙)なく、有機膜で充填されているかどうかを確認した。結果を表7に示す。埋め込み特性に劣る有機膜材料を用いた場合は、本評価において、ホール内部にボイドが発生する。埋め込み特性が良好な有機膜材料を用いた場合は、本評価において、図3(I)に示されるようにホール内部にボイドなく有機膜8が充填される。
有機膜形成用材料(UDL-1~9、比較UDL-1~3)をそれぞれ、巨大孤立トレンチパターン(図4(J)、トレンチ幅10μm、トレンチ深さ0.10μm)を有する下地基板9(SiO2ウエハー基板)上に塗布し、酸素濃度が0.2%以下に管理された窒素気流下450℃で60秒間ベークした後、トレンチ部分と非トレンチ部分の有機膜10の段差(図4(K)中のdelta10)を、パークシステムズ社製NX10原子間力顕微鏡(AFM)を用いて観察した。結果を表8に示す。本評価において、段差が小さいほど、平坦化特性が良好であるといえる。なお、本評価では、深さ0.10μmのトレンチパターンを、通常膜厚約0.2μmの有機膜材料を用いて平坦化しており、平坦化特性の優劣を評価するために厳しい評価条件となっている。
上記の有機膜形成用材料(UDL-1~9、比較UDL-3)を、それぞれ、300nmのSiO2膜が形成されているシリコンウエハー基板上に塗布し、酸素濃度が0.2%以下に管理された窒素気流下450℃で60秒ベークし、有機膜(レジスト下層膜)を形成した。その上にCVD-SiONハードマスクを形成し、更に有機反射防止膜材料(ARC-29A:日産化学社製)を塗布して210℃で60秒間ベークして膜厚80nmの有機反射防止膜を形成し、その上にレジスト上層膜材料のArF用単層レジストを塗布し、105℃で60秒間ベークして膜厚100nmのフォトレジスト膜を形成した。フォトレジスト膜上に液浸保護膜材料(TC-1)を塗布し90℃で60秒間ベークし膜厚50nmの保護膜を形成した。なお、比較例UDL―1およびUDL-2については耐熱性が劣るためCVD―SiONハードマスクの形成ができなかったため以後のパターン形成試験に進むこととはできなかった。
チャンバー圧力10.0Pa
RFパワー1,500W
CF4ガス流量75sccm
O2ガス流量15sccm
時間15sec
チャンバー圧力2.0Pa
RFパワー500W
Arガス流量75sccm
O2ガス流量45sccm
時間120sec
チャンバー圧力2.0Pa
RFパワー2,200W
C5F12ガス流量20sccm
C2F6ガス流量10sccm
Arガス流量300sccm
O2ガス流量60sccm
時間90sec
上記の有機膜形成用材料(UDL-1~9、比較UDL-3)を、SiO2ウエハー基板上に塗布し、酸素濃度が0.2%以下に管理された窒素気流下450℃で60秒ベークすることにより膜厚200nmの有機膜を形成した。この有機膜付のウエハーを、1×1cmの正方形に切り出し、専用治具を用いて切り出したウエハーにエポキシ接着剤付きのアルミピンを取り付けた。その後、オーブンを用いて150℃で1時間、加熱しアルミピンを基板に接着させた。室温まで冷却した後、薄膜密着強度測定装置(Sebastian Five-A)を用いて抵抗力により、初期の密着性を評価した。
3…有機膜、 3’…有機膜形成用組成物、 3a…有機膜パターン、
4…ケイ素含有レジスト中間膜、 4a…ケイ素含有レジスト中間膜パターン、
5…レジスト上層膜、 5a…レジスト上層膜パターン、 6…露光部分、
7…密集ホールパターンを有する下地基板、 8…有機膜、
9…巨大孤立トレンチパターンを有する下地基板、 10…有機膜、
delta10…トレンチ部分と非トレンチ部分の有機膜の段差、
11…シリコンウエハー、 12…硬化皮膜、 13…接着剤付きアルミピン、
14…支持台、 15…つかみ、 16…引張方向。
本発明の有機膜形成用の化合物は、下記一般式(1A)で示される有機膜形成用化合物である。
Claims (23)
- 前記(A)成分のゲルパーミエーションクロマトグラフィー法によるポリスチレン換算の重量平均分子量Mwと数平均分子量Mnとの比率Mw/Mnが、1.00≦Mw/Mn≦1.10であることを特徴とする請求項1から請求項3のいずれか一項に記載の有機膜形成用材料。
- 前記(B)成分は、沸点が180度未満の有機溶剤1種以上と、沸点が180度以上の有機溶剤1種以上との混合物であることを特徴とする請求項1から請求項4のいずれか一項に記載の有機膜形成用材料。
- 前記有機膜形成用材料が、更に(C)酸発生剤、(D)界面活性剤、(E)架橋剤、及び(F)可塑剤のうち1種以上を含有するものであることを特徴とする請求項1から請求項5のいずれか一項に記載の有機膜形成用材料。
- 基板上に、請求項1から請求項6のいずれか一項に記載の有機膜形成用材料が硬化した有機膜が形成されたものであることを特徴とする半導体装置製造用基板。
- 半導体装置の製造工程で適用される有機膜の形成方法であって、被加工基板上に請求項1から請求項6のいずれか一項に記載の有機膜形成用材料を回転塗布し、該有機膜形成用材料が塗布された被加工基板を不活性ガス雰囲気下で50℃以上600℃以下の温度で10秒~7200秒の範囲で熱処理を加えて硬化膜を得ることを特徴とする有機膜の形成方法。
- 半導体装置の製造工程で適用される有機膜の形成方法であって、被加工基板上に請求項1から請求項6のいずれか一項に記載の有機膜形成用材料を回転塗布し、該有機膜形成用材料が塗布された被加工基板を空気中で50℃以上250℃以下の温度で5秒~600秒の範囲で熱処理して塗布膜を形成し、続いて不活性ガス雰囲気下で200℃以上600℃以下の温度で10秒~7200秒の範囲で熱処理を加えて硬化膜を得ることを特徴とする有機膜の形成方法。
- 前記不活性ガス中の酸素濃度を1%以下とすることを特徴とする請求項8又は請求項9に記載の有機膜の形成方法。
- 前記被加工基板として、高さ30nm以上の構造体又は段差を有する被加工基板を用いることを特徴とする請求項8から請求項10のいずれか一項に記載の有機膜の形成方法。
- 被加工体上に請求項1から請求項6のいずれか一項に記載の有機膜形成用材料を用いて有機膜を形成し、該有機膜の上にケイ素含有レジスト中間膜材料を用いてケイ素含有レジスト中間膜を形成し、該ケイ素含有レジスト中間膜の上にフォトレジスト組成物を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該パターンが形成されたレジスト上層膜をマスクにして前記ケイ素含有レジスト中間膜にエッチングでパターンを転写し、該パターンが転写されたケイ素含有レジスト中間膜をマスクにして前記有機膜にエッチングでパターンを転写し、さらに、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写することを特徴とするパターン形成方法。
- 被加工体上に請求項1から請求項6のいずれか一項に記載の有機膜形成用材料を用いて有機膜を形成し、該有機膜の上にケイ素含有レジスト中間膜材料を用いてケイ素含有レジスト中間膜を形成し、該ケイ素含有レジスト中間膜の上に有機反射防止膜を形成し、該有機反射防止膜上にフォトレジスト組成物を用いてレジスト上層膜を形成して4層膜構造とし、前記レジスト上層膜に回路パターンを形成し、該パターンが形成されたレジスト上層膜をマスクにして前記有機反射防止膜と前記ケイ素含有レジスト中間膜にエッチングでパターンを転写し、該パターンが転写されたケイ素含有レジスト中間膜をマスクにして前記有機膜にエッチングでパターンを転写し、さらに、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写することを特徴とするパターン形成方法。
- 被加工体上に請求項1から請求項6のいずれか一項に記載の有機膜形成用材料を用いて有機膜を形成し、該有機膜の上にケイ素酸化膜、ケイ素窒化膜、ケイ素酸化窒化膜、チタン酸化膜、チタン窒化膜から選ばれる無機ハードマスクを形成し、該無機ハードマスクの上にフォトレジスト組成物を用いてレジスト上層膜を形成して、該レジスト上層膜に回路パターンを形成し、該パターンが形成されたレジスト上層膜をマスクにして前記無機ハードマスクにエッチングでパターンを転写し、該パターンが転写された無機ハードマスクをマスクにして前記有機膜にエッチングでパターンを転写し、さらに、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写することを特徴とするパターン形成方法。
- 被加工体上に請求項1から請求項6のいずれか一項に記載の有機膜形成用材料を用いて有機膜を形成し、該有機膜の上にケイ素酸化膜、ケイ素窒化膜、ケイ素酸化窒化膜、チタン酸化膜、チタン窒化膜から選ばれる無機ハードマスクを形成し、該無機ハードマスクの上に有機反射防止膜を形成し、該有機反射防止膜上にフォトレジスト組成物を用いてレジスト上層膜を形成して4層膜構造とし、前記レジスト上層膜に回路パターンを形成し、該パターンが形成されたレジスト上層膜をマスクにして前記有機反射防止膜と前記無機ハードマスクにエッチングでパターンを転写し、該パターンが転写された無機ハードマスクをマスクにして前記有機膜にエッチングでパターンを転写し、さらに、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写することを特徴とするパターン形成方法。
- 前記無機ハードマスクを、CVD法あるいはALD法によって形成することを特徴とする請求項14又は請求項15に記載のパターン形成方法。
- 前記回路パターンの形成において、波長が10nm以上300nm以下の光を用いたリソグラフィー、電子線による直接描画、ナノインプリンティング、又はこれらの組み合わせによって回路パターンを形成することを特徴とする請求項12から請求項16のいずれか一項に記載のパターン形成方法。
- 前記回路パターンの形成において、アルカリ現像又は有機溶剤によって回路パターンを現像することを特徴とする請求項12から請求項17のいずれか一項に記載のパターン形成方法。
- 前記被加工体として、半導体装置基板、又は該半導体装置基板上に金属膜、金属炭化膜、金属酸化膜、金属窒化膜、金属酸化炭化膜、及び金属酸化窒化膜のいずれかが成膜されたものを用いることを特徴とする請求項12から請求項18のいずれか一項に記載のパターン形成方法。
- 前記被加工体として、ケイ素、チタン、タングステン、ハフニウム、ジルコニウム、クロム、ゲルマニウム、銅、銀、金、アルミニウム、インジウム、ガリウム、ヒ素、パラジウム、鉄、タンタル、イリジウム、コバルト、マンガン、モリブデン、又はこれらの合金を含むものを用いることを特徴とする請求項19に記載のパターン形成方法。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4276407A (en) * | 1979-08-16 | 1981-06-30 | Hughes Aircraft Company | Acetylene terminated imide oligomers which melt at low temperatures |
JP2007137960A (ja) * | 2005-11-16 | 2007-06-07 | Amt Kenkyusho:Kk | ビスイミド又はビスイソイミド化合物及びそれを含む樹脂組成物 |
CN104130177A (zh) * | 2014-07-15 | 2014-11-05 | 四川大学 | 一种邻苯二甲腈和芳乙炔封端的芳酰亚胺的合成方法 |
WO2019146378A1 (ja) * | 2018-01-23 | 2019-08-01 | Jsr株式会社 | レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法並びにパターニングされた基板の製造方法 |
CN110499137A (zh) * | 2019-09-02 | 2019-11-26 | 黑龙江省科学院石油化学研究院 | 一种耐高温聚酰亚胺载体型胶粘剂及其制备方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3774668B2 (ja) | 2001-02-07 | 2006-05-17 | 東京エレクトロン株式会社 | シリコン窒化膜形成装置の洗浄前処理方法 |
JP4382750B2 (ja) | 2003-01-24 | 2009-12-16 | 東京エレクトロン株式会社 | 被処理基板上にシリコン窒化膜を形成するcvd方法 |
JP4355943B2 (ja) | 2003-10-03 | 2009-11-04 | 信越化学工業株式会社 | フォトレジスト下層膜形成材料及びパターン形成方法 |
JP2005272483A (ja) * | 2004-03-22 | 2005-10-06 | Sumitomo Bakelite Co Ltd | 硬化性化合物、その硬化物および電子部品装置 |
JP4662052B2 (ja) | 2005-03-11 | 2011-03-30 | 信越化学工業株式会社 | フォトレジスト下層膜形成材料及びパターン形成方法 |
JP4575214B2 (ja) | 2005-04-04 | 2010-11-04 | 信越化学工業株式会社 | レジスト下層膜材料およびパターン形成方法 |
JP4659678B2 (ja) | 2005-12-27 | 2011-03-30 | 信越化学工業株式会社 | フォトレジスト下層膜形成材料及びパターン形成方法 |
JP4968540B2 (ja) * | 2008-02-07 | 2012-07-04 | 独立行政法人 宇宙航空研究開発機構 | 可溶性末端変性イミドオリゴマーおよびワニス並びにその硬化物 |
JP4569786B2 (ja) | 2008-05-01 | 2010-10-27 | 信越化学工業株式会社 | 新規光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法 |
JP5336306B2 (ja) | 2008-10-20 | 2013-11-06 | 信越化学工業株式会社 | レジスト下層膜形成方法、これを用いたパターン形成方法、及びレジスト下層膜材料 |
JP5195478B2 (ja) | 2009-02-05 | 2013-05-08 | Jsr株式会社 | レジスト下層膜形成用組成物、レジスト下層膜、レジスト下層膜の形成方法、及びパターン形成方法 |
KR20100122656A (ko) | 2009-05-13 | 2010-11-23 | 삼성엘이디 주식회사 | 도광판 및 이를 구비하는 백라이트 유닛 |
JP2013137334A (ja) | 2010-04-21 | 2013-07-11 | Nissan Chem Ind Ltd | ポリイミド構造を含有する樹脂を含むリソグラフィー用レジスト下層膜形成組成物 |
US8513133B2 (en) | 2011-03-31 | 2013-08-20 | Jsr Corporation | Composition for forming resist underlayer film and method for forming pattern |
JP5925721B2 (ja) | 2012-05-08 | 2016-05-25 | 信越化学工業株式会社 | 有機膜材料、これを用いた有機膜形成方法及びパターン形成方法 |
KR101400655B1 (ko) | 2012-06-07 | 2014-05-29 | 장호기 | 당뇨발 보호기능이 구비된 아치 교정용 신발안창 |
JP6361657B2 (ja) | 2013-06-24 | 2018-07-25 | Jsr株式会社 | 膜形成用組成物、レジスト下層膜及びその形成方法、並びにパターン形成方法 |
JP6248865B2 (ja) | 2014-08-25 | 2017-12-20 | Jsr株式会社 | 膜形成用組成物、膜、パターンが形成された基板の製造方法及び化合物 |
JP6264246B2 (ja) | 2014-09-19 | 2018-01-24 | Jsr株式会社 | 膜形成用組成物、膜、パターンが形成された基板の製造方法及び化合物 |
KR102358548B1 (ko) | 2014-10-15 | 2022-02-04 | 삼성전자주식회사 | 디바이스를 이용한 화면 처리 방법 및 장치 |
KR101704128B1 (ko) | 2014-11-20 | 2017-02-08 | 이미남 | 장갑 제조방법 |
MX2017006805A (es) | 2014-11-24 | 2017-09-08 | Technip E & C Ltd | Un proceso para preparar eteno. |
JP6711104B2 (ja) * | 2015-04-24 | 2020-06-17 | Jsr株式会社 | レジスト下層膜形成方法及びパターン形成方法 |
JP6372887B2 (ja) * | 2015-05-14 | 2018-08-15 | 信越化学工業株式会社 | 有機膜材料、有機膜形成方法、パターン形成方法、及び化合物 |
JP6714493B2 (ja) * | 2015-12-24 | 2020-06-24 | 信越化学工業株式会社 | 有機膜形成用化合物、有機膜形成用組成物、有機膜形成方法、及びパターン形成方法 |
-
2020
- 2020-10-05 JP JP2020168278A patent/JP7352530B2/ja active Active
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2021
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4276407A (en) * | 1979-08-16 | 1981-06-30 | Hughes Aircraft Company | Acetylene terminated imide oligomers which melt at low temperatures |
JP2007137960A (ja) * | 2005-11-16 | 2007-06-07 | Amt Kenkyusho:Kk | ビスイミド又はビスイソイミド化合物及びそれを含む樹脂組成物 |
CN104130177A (zh) * | 2014-07-15 | 2014-11-05 | 四川大学 | 一种邻苯二甲腈和芳乙炔封端的芳酰亚胺的合成方法 |
WO2019146378A1 (ja) * | 2018-01-23 | 2019-08-01 | Jsr株式会社 | レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法並びにパターニングされた基板の製造方法 |
CN110499137A (zh) * | 2019-09-02 | 2019-11-26 | 黑龙江省科学院石油化学研究院 | 一种耐高温聚酰亚胺载体型胶粘剂及其制备方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022124133A (ja) * | 2021-02-15 | 2022-08-25 | 信越化学工業株式会社 | 有機膜形成用材料、半導体装置製造用基板、有機膜の形成方法、パターン形成方法、及び有機膜形成用化合物 |
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