JP2022058894A - Electrostatic chuck device - Google Patents

Electrostatic chuck device Download PDF

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JP2022058894A
JP2022058894A JP2022015914A JP2022015914A JP2022058894A JP 2022058894 A JP2022058894 A JP 2022058894A JP 2022015914 A JP2022015914 A JP 2022015914A JP 2022015914 A JP2022015914 A JP 2022015914A JP 2022058894 A JP2022058894 A JP 2022058894A
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layer
thickness
organic film
insulating organic
ceramic
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JP7335371B2 (en
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允義 山崎
Mitsuyoshi Yamazaki
勇気 清水
Yuuki Shimizu
知哉 萩原
Tomoya Hagiwara
正 高村
Tadashi Takamura
良二 四方
Ryoji Yomo
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Tomoegawa Co Ltd
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Tomoegawa Paper Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Abstract

PROBLEM TO BE SOLVED: To provide an electrostatic chuck device which has excellent plasma resistance and withstand voltage and also has excellent attraction properties.
SOLUTION: An electrostatic chuck device 1 includes: a plurality of internal electrodes 20; insulating organic films 40 provided on both surface sides in a thickness direction of the internal electrodes 20; and a ceramic layer 60 laminated via an intermediate layer 50 on an upper surface in the thickness direction of a laminate 2 including at least the internal electrodes 20 and the insulating organic films 40. The ceramic layer 60 has a ceramic ground layer 61 and a ceramic surface layer 62. The insulating organic films 40 consist of a first insulating organic film 41 and a second insulating organic film 42. A second adhesive layer 32 is provided between the internal electrodes 20 and the second insulating organic film 42. A total thickness of the ceramic ground layer 61, the ceramic surface layer 62, the intermediate layer 50, the second adhesive layer 32, and the second insulating organic film 42 is 125 μm or less.
SELECTED DRAWING: Figure 1
COPYRIGHT: (C)2022,JPO&INPIT

Description

本発明は、静電チャック装置に関する。 The present invention relates to an electrostatic chuck device.

半導体ウエハを使用して半導体集積回路を製造する場合や、ガラス基板、フィルム等の絶縁性基板を使用した液晶パネルを製造する場合には、半導体ウエハ、ガラス基板、絶縁性基板等の基材を所定部位に吸着保持する必要がある。そのため、それらの基材を吸着保持するために、機械的方法によるメカニカルチャックや真空チャック等が用いられていた。しかしながら、これらの保持方法は、基材（被吸着体）を均一に保持することが困難である、真空中で使用することができない、試料表面の温度が上昇し過ぎる等の問題があった。そこで、近年、被吸着体の保持には、これらの問題を解決することができる静電チャック装置が用いられている。 When manufacturing a semiconductor integrated circuit using a semiconductor wafer, or when manufacturing a liquid crystal panel using an insulating substrate such as a glass substrate or a film, a substrate such as a semiconductor wafer, a glass substrate, or an insulating substrate is used. It is necessary to adsorb and hold it at a predetermined site. Therefore, in order to adsorb and hold those base materials, a mechanical chuck, a vacuum chuck, or the like by a mechanical method has been used. However, these holding methods have problems such as difficulty in uniformly holding the base material (adsorbed body), inability to use in a vacuum, and an excessive rise in the temperature of the sample surface. Therefore, in recent years, an electrostatic chuck device capable of solving these problems has been used for holding the adsorbed body.

静電チャック装置は、内部電極となる導電性支持部材と、それを被覆する誘電性材料からなる誘電層と、を主要部として備える。この主要部により被吸着体を吸着させることができる。静電チャック装置内の内部電極に電圧を印加して、被吸着体と導電性支持部材との間に電位差を生じさせると、誘電層の間に静電気的な吸着力が発生する。これにより、被吸着体は導電性支持部材に対しほぼ平坦に支持される。 The electrostatic chuck device includes, as a main part, a conductive support member serving as an internal electrode and a dielectric layer made of a dielectric material covering the conductive support member. The object to be adsorbed can be adsorbed by this main part. When a voltage is applied to the internal electrodes in the electrostatic chuck device to generate a potential difference between the object to be adsorbed and the conductive support member, an electrostatic adsorption force is generated between the dielectric layers. As a result, the adsorbed body is supported almost flatly with respect to the conductive support member.

従来の静電チャック装置としては、内部電極上に絶縁性有機フィルムを積層して、誘電層を形成した静電チャック装置（例えば、特許文献１参照）が知られている。また、内部電極上にセラミックスを溶射して、誘電層を形成した静電チャック装置（例えば、特許文献２参照）が知られている。また、内部電極上に積層した絶縁性有機フィルム上にセラミックスを溶射して、セラミックス層を形成した静電チャック装置（例えば、特許文献３参照）が知られている。 As a conventional electrostatic chuck device, an electrostatic chuck device (for example, see Patent Document 1) in which an insulating organic film is laminated on an internal electrode to form a dielectric layer is known. Further, there is known an electrostatic chuck device (see, for example, Patent Document 2) in which ceramics are sprayed onto an internal electrode to form a dielectric layer. Further, there is known an electrostatic chuck device (see, for example, Patent Document 3) in which a ceramic layer is formed by spraying ceramics onto an insulating organic film laminated on an internal electrode.

特開２００４－２３５５６３号公報Japanese Unexamined Patent Publication No. 2004-235563 実公平６－３６５８３号公報Jitsufuku No. 6-36583 Gazette 特許第５０５４０２２号公報Japanese Patent No. 5054022

特許文献１に記載されているような、内部電極上に設けた絶縁性有機フィルムからなる誘電層で形成されたクーロン力により、被吸着体を吸着する静電チャック装置は、吸着力には優れている。しかしながら、この静電チャック装置は、ドライエッチング装置で使用するプラズマ環境下での耐性が低く、製品寿命が短いという課題があった。 An electrostatic chuck device that adsorbs an object to be adsorbed by a Coulomb force formed by a dielectric layer made of an insulating organic film provided on an internal electrode as described in Patent Document 1 is excellent in adsorption force. ing. However, this electrostatic chuck device has a problem that the resistance in the plasma environment used in the dry etching device is low and the product life is short.

また、特許文献２に記載されているような、内部電極上にセラミックスを溶射して形成した誘電層を有する静電チャック装置は、プラズマ耐性がある。しかしながら、セラミックス粒子間に空隙が存在するため、安定した絶縁性を得ることが難しいばかりでなく、絶縁性確保のために誘電層を厚くしなければならない。そのため、クーロン力で被吸着体を吸着する静電チャック装置としては、高い吸着力を得ることが難しいという課題があった。 Further, an electrostatic chuck device having a dielectric layer formed by spraying ceramics on an internal electrode as described in Patent Document 2 has plasma resistance. However, since there are voids between the ceramic particles, it is not only difficult to obtain stable insulating properties, but also the dielectric layer must be thickened to ensure insulating properties. Therefore, there is a problem that it is difficult to obtain a high adsorption force as an electrostatic chuck device that adsorbs an object to be adsorbed by Coulomb force.

また、特許文献３に記載されているような、内部電極上に積層した絶縁性有機フィルム上にセラミックスを溶射して形成したセラミックス層を有する静電チャック装置では、絶縁性有機フィルム上にセラミックス層を溶射形成するため、絶縁性有機フィルム上に凹凸形成が必要であった。しかしながら、この凹凸形成やセラミックス溶射により、絶縁性有機フィルムの絶縁性が低下し、静電チャック装置として使用するにはセラミックス層の厚さが少なくとも１００μｍ必要であった。また、絶縁性有機フィルム上にセラミックスを溶射した場合、絶縁性有機フィルムの端部までセラミックス層で覆うことができなかった。絶縁性有機フィルムの端部が露出していると、静電チャック装置のプラズマ耐性が低下する。 Further, in an electrostatic chuck device having a ceramic layer formed by spraying ceramics on an insulating organic film laminated on an internal electrode as described in Patent Document 3, the ceramic layer is formed on the insulating organic film. It was necessary to form irregularities on the insulating organic film in order to form the thermal spray. However, due to this unevenness formation and ceramic spraying, the insulating property of the insulating organic film deteriorates, and the thickness of the ceramic layer needs to be at least 100 μm in order to be used as an electrostatic chuck device. Further, when the ceramics were sprayed onto the insulating organic film, the edges of the insulating organic film could not be covered with the ceramic layer. If the edges of the insulating organic film are exposed, the plasma resistance of the electrostatic chuck device will decrease.

本発明は、上記事情に鑑みてなされたものであって、優れたプラズマ耐性と耐電圧性を有し、かつ吸着性にも優れた静電チャック装置を提供することを課題とする。 The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an electrostatic chuck device having excellent plasma resistance and withstand voltage resistance, and also having excellent adsorptivity.

本発明は、以下の態様を有する。
［１］複数の内部電極と、該内部電極の厚さ方向の両面側に設けられた絶縁性有機フィルムと、少なくとも前記内部電極および前記絶縁性有機フィルムを含む積層体の厚さ方向の上面に中間層を介して積層されたセラミックス層と、を備え、前記セラミックス層は、セラミックス下地層と、該セラミックス下地層の上面に形成され、凹凸を有するセラミックス表層とを有し、前記絶縁性有機フィルムは、前記内部電極の厚さ方向の下面側に設けられた第１の絶縁性有機フィルムと前記内部電極の厚さ方向の上面側に設けられた第２の絶縁性有機フィルムとからなり、前記第１の絶縁性有機フィルムの前記内部電極とは反対側の面に第１の接着剤層が設けられ、前記第１の絶縁性有機フィルムおよび前記第１の絶縁性有機フィルムの厚さ方向の上面側に設けられた前記内部電極と前記第２の絶縁性有機フィルムの間に第２の接着剤層が設けられ、前記セラミックス下地層の厚さ、前記セラミックス表層の厚さ、前記中間層の厚さ、前記第２の接着剤層の厚さ、および前記第２の絶縁性有機フィルムの厚さの合計が１２５μｍ以下であることを特徴とする静電チャック装置。
［２］前記セラミックス層は、前記中間層を介して前記積層体の外面全面を覆うことを特徴とする［１］に記載の静電チャック装置。
［３］前記中間層は、有機絶縁性樹脂および無機絶縁性樹脂の少なくとも一方と、無機充填剤および繊維状充填剤の少なくとも一方と、を含むことを特徴とする［１］または［２］に記載の静電チャック装置。
［４］前記無機充填剤は、球形粉体および不定形粉体の少なくとも一方であることを特徴とする［３］に記載の静電チャック装置。
［５］前記球形粉体および前記不定形粉体は、アルミナ、シリカおよびイットリアからなる群から選択される少なくとも１種であることを特徴とする［４］に記載の静電チャック装置。
［６］前記繊維状充填剤は、植物繊維、無機繊維および繊維化された有機樹脂からなる群から選択される少なくとも１種であることを特徴とする［３］～［５］のいずれかに記載の静電チャック装置。
［７］前記絶縁性有機フィルムは、ポリイミドフィルムであることを特徴とする［１］～［６］のいずれかに記載の静電チャック装置。
［８］前記第１の接着剤層の厚さ、前記第１の絶縁性有機フィルムの厚さ、前記内部電極の厚さ、前記第２の接着剤層の厚さ、前記第２の絶縁性有機フィルムの厚さ、前記中間層の厚さ、および前記セラミックス層の厚さの合計が２００μｍ以下であることを特徴とする［１］～［７］のいずれかに記載の静電チャック装置。 The present invention has the following aspects.
[1] On the upper surface in the thickness direction of a laminate containing a plurality of internal electrodes, insulating organic films provided on both sides of the internal electrodes in the thickness direction, and at least the internal electrodes and the insulating organic film. The ceramic layer includes a ceramic layer laminated via an intermediate layer, and the ceramic layer has a ceramic base layer and a ceramic surface layer formed on the upper surface of the ceramic base layer and having irregularities, and the insulating organic film. Consists of a first insulating organic film provided on the lower surface side in the thickness direction of the internal electrode and a second insulating organic film provided on the upper surface side in the thickness direction of the internal electrode. A first adhesive layer is provided on the surface of the first insulating organic film opposite to the internal electrode, in the thickness direction of the first insulating organic film and the first insulating organic film. A second adhesive layer is provided between the internal electrode provided on the upper surface side and the second insulating organic film, and the thickness of the ceramic base layer, the thickness of the ceramic surface layer, and the intermediate layer are provided. An electrostatic chuck device characterized in that the total thickness of the thickness, the thickness of the second adhesive layer, and the thickness of the second insulating organic film is 125 μm or less.
[2] The electrostatic chuck device according to [1], wherein the ceramic layer covers the entire outer surface of the laminated body via the intermediate layer.
[3] The intermediate layer is characterized in that it contains at least one of an organic insulating resin and an inorganic insulating resin, and at least one of an inorganic filler and a fibrous filler [1] or [2]. The electrostatic chuck device described.
[4] The electrostatic chuck device according to [3], wherein the inorganic filler is at least one of a spherical powder and an amorphous powder.
[5] The electrostatic chuck device according to [4], wherein the spherical powder and the amorphous powder are at least one selected from the group consisting of alumina, silica and ittoria.
[6] The fibrous filler is any one of [3] to [5], which is at least one selected from the group consisting of plant fibers, inorganic fibers and fibrous organic resins. The electrostatic chuck device described.
[7] The electrostatic chuck device according to any one of [1] to [6], wherein the insulating organic film is a polyimide film.
[8] The thickness of the first adhesive layer, the thickness of the first insulating organic film, the thickness of the internal electrode, the thickness of the second adhesive layer, the second insulating property. The electrostatic chuck device according to any one of [1] to [7], wherein the total thickness of the organic film, the intermediate layer, and the ceramic layer is 200 μm or less.

本発明によれば、優れたプラズマ耐性と耐電圧性を有し、かつ吸着性にも優れた静電チャック装置を提供することができる。 According to the present invention, it is possible to provide an electrostatic chuck device having excellent plasma resistance and withstand voltage resistance, and also having excellent adsorptivity.

本発明の静電チャック装置の概略構成を示し、静電チャック装置の高さ方向に沿う断面図である。The schematic configuration of the electrostatic chuck device of this invention is shown, and it is sectional drawing along the height direction of the electrostatic chuck device.

以下、本発明を適用した実施形態の静電チャック装置について説明する。なお、以下の説明で用いる図面において、各構成要素の寸法比率等が実際と同じであるとは限らない。
なお、本実施形態は、発明の趣旨をより良く理解させるために具体的に説明するものであり、特に指定のない限り、本発明を限定するものではない。 Hereinafter, the electrostatic chuck device of the embodiment to which the present invention is applied will be described. In the drawings used in the following description, the dimensional ratios and the like of each component are not always the same as the actual ones.
It should be noted that the present embodiment is specifically described in order to better understand the gist of the invention, and is not limited to the present invention unless otherwise specified.

［静電チャック装置］
図１は、本実施形態の静電チャック装置の概略構成を示し、静電チャック装置の高さ方向に沿う断面図である。
図１に示すように、本実施形態の静電チャック装置１は、基板１０と、複数の内部電極２０と、接着剤層３０と、絶縁性有機フィルム４０と、中間層５０と、セラミックス層６０と、を備える。詳細には、図１に示すように、本実施形態の静電チャック装置１は、基板１０と、第１の内部電極２１と、第２の内部電極２２と、第１の接着剤層３１と、第２の接着剤層３２と、第１の絶縁性有機フィルム４１と、第２の絶縁性有機フィルム４２と、中間層５０と、セラミックス層６０と、を備える。 [Electrostatic chuck device]
FIG. 1 shows a schematic configuration of the electrostatic chuck device of the present embodiment, and is a cross-sectional view taken along the height direction of the electrostatic chuck device.
As shown in FIG. 1, the electrostatic chuck device 1 of the present embodiment includes a substrate 10, a plurality of internal electrodes 20, an adhesive layer 30, an insulating organic film 40, an intermediate layer 50, and a ceramic layer 60. And. Specifically, as shown in FIG. 1, the electrostatic chuck device 1 of the present embodiment includes a substrate 10, a first internal electrode 21, a second internal electrode 22, and a first adhesive layer 31. A second adhesive layer 32, a first insulating organic film 41, a second insulating organic film 42, an intermediate layer 50, and a ceramics layer 60 are provided.

本実施形態の静電チャック装置１では、基板１０の表面（基板１０の厚さ方向の上面）１０ａにて、第１の接着剤層３１と、第１の絶縁性有機フィルム４１と、第１の内部電極２１および第２の内部電極２２と、第２の接着剤層３２と、第２の絶縁性有機フィルム４２と、中間層５０と、セラミックス層６０とがこの順に積層されている。 In the electrostatic chuck device 1 of the present embodiment, the first adhesive layer 31, the first insulating organic film 41, and the first on the surface of the substrate 10 (upper surface in the thickness direction of the substrate 10) 10a. The internal electrode 21 and the second internal electrode 22, the second adhesive layer 32, the second insulating organic film 42, the intermediate layer 50, and the ceramics layer 60 are laminated in this order.

内部電極２０の厚さ方向の両面（内部電極２０の厚さ方向の上面２０ａ、内部電極２０の厚さ方向の下面２０ｂ）側にそれぞれ絶縁性有機フィルム４０が設けられている。詳細には、第１の内部電極２１の厚さ方向の上面２１ａ側および第２の内部電極２２の厚さ方向の上面２２ａ側に、第２の絶縁性有機フィルム４２が設けられている。また、第１の内部電極２１の厚さ方向の下面２１ｂ側および第２の内部電極２２の厚さ方向の下面２２ｂ側に、第１の絶縁性有機フィルム４１が設けられている。 Insulating organic films 40 are provided on both sides of the internal electrode 20 in the thickness direction (upper surface 20a in the thickness direction of the internal electrode 20 and lower surface 20b in the thickness direction of the internal electrode 20), respectively. Specifically, the second insulating organic film 42 is provided on the upper surface 21a side in the thickness direction of the first internal electrode 21 and the upper surface 22a side in the thickness direction of the second internal electrode 22. Further, the first insulating organic film 41 is provided on the lower surface 21b side in the thickness direction of the first internal electrode 21 and the lower surface 22b side in the thickness direction of the second internal electrode 22.

第１の絶縁性有機フィルム４１の内部電極２０とは反対側の面（第１の絶縁性有機フィルム４１の下面４１ｂ）に第１の接着剤層３１が設けられている。第１の絶縁性有機フィルム４１および第１の絶縁性有機フィルム４１の厚さ方向の上面４１ａに設けられた内部電極２０と第２の絶縁性有機フィルム４２の間に第２の接着剤層３２が設けられている。 The first adhesive layer 31 is provided on the surface of the first insulating organic film 41 opposite to the internal electrode 20 (lower surface 41b of the first insulating organic film 41). A second adhesive layer 32 between the internal electrode 20 provided on the upper surface 41a of the first insulating organic film 41 and the first insulating organic film 41 in the thickness direction and the second insulating organic film 42. Is provided.

第１の接着剤層３１の厚さ、第１の絶縁性有機フィルム４１の厚さ、内部電極２０の厚さ、第２の接着剤層３２の厚さ、第２の絶縁性有機フィルム４２の厚さ、中間層５０の厚さ、およびセラミックス層６０（セラミックス下地層６１、セラミックス表層６２）の厚さの合計（以下、「合計厚さ（１）」と言う。）が２００μｍ以下であることが好ましく、１７０μｍ以下であることがより好ましい。前記の合計厚さ（１）が２００μｍ以下であれば、静電チャック装置１は耐電圧特性、耐プラズマ性に優れ、結果として吸着力に優れる。 The thickness of the first adhesive layer 31, the thickness of the first insulating organic film 41, the thickness of the internal electrode 20, the thickness of the second adhesive layer 32, the thickness of the second insulating organic film 42. The total thickness of the thickness, the thickness of the intermediate layer 50, and the thickness of the ceramic layer 60 (ceramic base layer 61, ceramic surface layer 62) (hereinafter referred to as "total thickness (1)") is 200 μm or less. Is preferable, and it is more preferably 170 μm or less. When the total thickness (1) is 200 μm or less, the electrostatic chuck device 1 is excellent in withstand voltage characteristics and plasma resistance, and as a result, is excellent in adsorption force.

第１の接着剤層３１の厚さ、第１の絶縁性有機フィルム４１の厚さ、内部電極２０の厚さ、第２の接着剤層３２の厚さ、および第２の絶縁性有機フィルム４２の厚さの合計（以下、「合計厚さ（２）」と言う。）が１１０μｍ以下であることが好ましく、９０μｍ以下であることがより好ましい。前記の合計厚さ（２）が１１０μｍ以下であれば、静電チャック装置１は耐電圧特性、耐プラズマ性に優れ、結果として吸着力に優れる。 The thickness of the first adhesive layer 31, the thickness of the first insulating organic film 41, the thickness of the internal electrode 20, the thickness of the second adhesive layer 32, and the thickness of the second insulating organic film 42. The total thickness (hereinafter referred to as “total thickness (2)”) is preferably 110 μm or less, and more preferably 90 μm or less. When the total thickness (2) is 110 μm or less, the electrostatic chuck device 1 is excellent in withstand voltage characteristics and plasma resistance, and as a result, is excellent in adsorption power.

第２の接着剤層３２の厚さ、および第２の絶縁性有機フィルム４２の厚さの合計（以下、「合計厚さ（３）」と言う。）が５０μｍ以下であることが好ましく、４０μｍ以下であることがより好ましい。前記の合計厚さ（２）が５０μｍ以下であれば、静電チャック装置１は耐電圧特性、耐プラズマ性に優れ、結果として吸着力に優れる。 The total thickness of the second adhesive layer 32 and the thickness of the second insulating organic film 42 (hereinafter referred to as “total thickness (3)”) is preferably 50 μm or less, preferably 40 μm. The following is more preferable. When the total thickness (2) is 50 μm or less, the electrostatic chuck device 1 is excellent in withstand voltage characteristics and plasma resistance, and as a result, is excellent in adsorption force.

少なくとも内部電極２０および絶縁性有機フィルム４０を含む積層体２の厚さ方向の上面２ａ（第２の絶縁性有機フィルム４２の上面４２ａ）に、中間層５０を介してセラミックス層６０が積層されている。 The ceramic layer 60 is laminated on the upper surface 2a (upper surface 42a of the second insulating organic film 42) in the thickness direction of the laminate 2 including at least the internal electrode 20 and the insulating organic film 40 via the intermediate layer 50. There is.

図１に示すように、セラミックス層６０は、中間層５０を介して積層体２の外面（積層体２の上面２ａ、側面（積層体２の厚さ方向に沿う面、第１の接着剤層３１の側面、第２の接着剤層３２の側面、第１の絶縁性有機フィルム４１の側面、および、第２の絶縁性有機フィルム４２の側面）２ｂ全面を覆うことが好ましい。言い換えれば、中間層５０が積層体２の外面全面を覆い、その中間層５０の外面（中間層５０の上面５０ａ、側面（積層体２の厚さ方向に沿う面）５０ｂ）全面を、セラミックス層６０が覆うことが好ましい。 As shown in FIG. 1, the ceramic layer 60 has an outer surface (upper surface 2a of the laminated body 2, a side surface (a surface along the thickness direction of the laminated body 2, a first adhesive layer) of the laminated body 2 via an intermediate layer 50. It is preferable to cover the entire surface of 2b (the side surface of 31, the side surface of the second adhesive layer 32, the side surface of the first insulating organic film 41, and the side surface of the second insulating organic film 42), in other words, the intermediate. The layer 50 covers the entire outer surface of the laminated body 2, and the entire outer surface of the intermediate layer 50 (the upper surface 50a of the intermediate layer 50 and the side surface (the surface along the thickness direction of the laminated body 2) 50b) is covered by the ceramic layer 60. Is preferable.

図１に示すように、セラミックス層６０は、セラミックス下地層６１と、セラミックス下地層６１の上面（セラミックス下地層６１の厚さ方向の上面）６１ａに形成され、凹凸を有するセラミックス表層６２と、を有することが好ましい。 As shown in FIG. 1, the ceramic layer 60 includes a ceramic base layer 61 and a ceramic surface layer 62 formed on the upper surface of the ceramic base layer 61 (upper surface in the thickness direction of the ceramic base layer 61) 61a and having irregularities. It is preferable to have.

セラミックス下地層６１の厚さ、セラミックス表層６２の厚さ、中間層５０、第２の接着剤層３２の厚さ、および第２の絶縁性有機フィルム４２の厚さの合計（以下、「合計厚さ（４）」と言う。）が１２５μｍ以下であることが好ましく、１１０μｍ以下であることがより好ましい。前記の合計厚さ（４）が１２５μｍ以下であれば、静電チャック装置１は耐電圧特性、耐プラズマ性に優れ、結果として吸着力に優れる。 The sum of the thickness of the ceramic base layer 61, the thickness of the ceramic surface layer 62, the intermediate layer 50, the thickness of the second adhesive layer 32, and the thickness of the second insulating organic film 42 (hereinafter, "total thickness"). (4) ”) is preferably 125 μm or less, and more preferably 110 μm or less. When the total thickness (4) is 125 μm or less, the electrostatic chuck device 1 is excellent in withstand voltage characteristics and plasma resistance, and as a result, is excellent in adsorption power.

第１の内部電極２１および第２の内部電極２２は、第１の絶縁性有機フィルム４１または第２の絶縁性有機フィルム４２に接していてもよい。また、第１の内部電極２１および第２の内部電極２２は、図１に示すように、第２の接着剤層３２の内部に形成されていてもよい。第１の内部電極２１および第２の内部電極２２の配置は、適宜設計することができる。 The first internal electrode 21 and the second internal electrode 22 may be in contact with the first insulating organic film 41 or the second insulating organic film 42. Further, the first internal electrode 21 and the second internal electrode 22 may be formed inside the second adhesive layer 32 as shown in FIG. The arrangement of the first internal electrode 21 and the second internal electrode 22 can be appropriately designed.

第１の内部電極２１と第２の内部電極２２は、それぞれ独立しているため、同一極性の電圧を印加するだけではなく、極性の異なる電圧を印加することもできる。第１の内部電極２１および第２の内部電極２２は、導電体、半導体および絶縁体等の被吸着体を吸着することができれば、その電極パターンや形状は特に限定されない。また、第１の内部電極２１のみが単極として設けられていてもよい。 Since the first internal electrode 21 and the second internal electrode 22 are independent of each other, not only voltages having the same polarity but also voltages having different polarities can be applied. The electrode pattern and shape of the first internal electrode 21 and the second internal electrode 22 are not particularly limited as long as they can adsorb an adsorbed body such as a conductor, a semiconductor, and an insulator. Further, only the first internal electrode 21 may be provided as a single pole.

本実施形態の静電チャック装置１は、少なくとも第２の絶縁性有機フィルム４２の上面４２ａに、中間層５０を介してセラミックス層６０が積層されていれば、その他の層構成については特に限定されない。例えば、図１に示す基板１０がなくてもよい。 The electrostatic chuck device 1 of the present embodiment is not particularly limited in other layer configurations as long as the ceramic layer 60 is laminated on the upper surface 42a of at least the second insulating organic film 42 via the intermediate layer 50. .. For example, the substrate 10 shown in FIG. 1 may not be present.

基板１０としては、特に限定されないが、セラミックス基板、炭化ケイ素基板、アルミニウムやステンレス等からなる金属基板等が挙げられる。 The substrate 10 is not particularly limited, and examples thereof include a ceramic substrate, a silicon carbide substrate, and a metal substrate made of aluminum, stainless steel, or the like.

内部電極２０としては、電圧を印加した際に静電吸着力を発現できる導電性物質からなるものであれば特に限定されない。内部電極２０としては、例えば、銅、アルミニウム、金、銀、白金、クロム、ニッケル、タングステン等の金属からなる薄膜、および前記の金属から選択される少なくとも２種の金属からなる薄膜が好適に用いられる。このような金属の薄膜としては、蒸着、メッキ、スパッタリング等により成膜されたものや、導電性ペーストを塗布乾燥して成膜されたもの、具体的には、銅箔等の金属箔が挙げられる。 The internal electrode 20 is not particularly limited as long as it is made of a conductive substance capable of exhibiting an electrostatic adsorption force when a voltage is applied. As the internal electrode 20, for example, a thin film made of a metal such as copper, aluminum, gold, silver, platinum, chromium, nickel, and tungsten, and a thin film made of at least two kinds of metals selected from the above metals are preferably used. Be done. Examples of such a metal thin film include those formed by vapor deposition, plating, sputtering, etc., those formed by applying and drying a conductive paste, and specifically, metal foils such as copper foil. Be done.

第２の接着剤層３２の厚さが、内部電極２０の厚さよりも大きくなっていれば、内部電極２０の厚さは特に限定されない。内部電極２０の厚さは、２０μｍ以下であることが好ましい。内部電極２０の厚さが、２０μｍ以下であれば、第２の絶縁性有機フィルム４２を形成する際に、その上面４２ａに凹凸が生じ難い。その結果、第２の絶縁性有機フィルム４２上にセラミックス層６０を形成する際や、セラミックス層６０を研磨する際に、不良が生じ難い。 The thickness of the internal electrode 20 is not particularly limited as long as the thickness of the second adhesive layer 32 is larger than the thickness of the internal electrode 20. The thickness of the internal electrode 20 is preferably 20 μm or less. When the thickness of the internal electrode 20 is 20 μm or less, unevenness is unlikely to occur on the upper surface 42a of the second insulating organic film 42 when it is formed. As a result, defects are less likely to occur when the ceramic layer 60 is formed on the second insulating organic film 42 or when the ceramic layer 60 is polished.

内部電極２０の厚さは、１μｍ以上であることが好ましい。内部電極２０の厚さが１μｍ以上であれば、内部電極２０と、第１の絶縁性有機フィルム４１または第２の絶縁性有機フィルム４２とを接合する際に、十分な接合強度が得られる。 The thickness of the internal electrode 20 is preferably 1 μm or more. When the thickness of the internal electrode 20 is 1 μm or more, sufficient bonding strength can be obtained when the internal electrode 20 is bonded to the first insulating organic film 41 or the second insulating organic film 42.

第１の内部電極２１と第２の内部電極２２に、極性の異なる電圧を印加する場合、隣接する第１の内部電極２１と第２の内部電極２２の間隔（内部電極２０の厚さ方向と垂直な方向の間隔）は、２ｍｍ以下であることが好ましい。第１の内部電極２１と第２の内部電極２２の間隔が２ｍｍ以下であれば、第１の内部電極２１と第２の内部電極２２の間に十分な静電力が発生し、十分な吸着力が発生する。 When voltages having different polarities are applied to the first internal electrode 21 and the second internal electrode 22, the distance between the adjacent first internal electrode 21 and the second internal electrode 22 (in the thickness direction of the internal electrode 20). The distance in the vertical direction) is preferably 2 mm or less. If the distance between the first internal electrode 21 and the second internal electrode 22 is 2 mm or less, a sufficient electrostatic force is generated between the first internal electrode 21 and the second internal electrode 22, and a sufficient adsorption force is generated. Occurs.

内部電極２０から被吸着体までの距離、すなわち、第１の内部電極２１の上面２１ａおよび第２の内部電極２２の上面２２ａからセラミックス表層６２上に吸着される被吸着体までの距離（第１の内部電極２１の上面２１ａおよび第２の内部電極２２の上面２２ａ上に存在する、第２の接着剤層３２、第２の絶縁性有機フィルム４２、中間層５０、セラミックス下地層６１およびセラミックス表層６２の厚さの合計）は、５０μｍ～１２５μｍであることが好ましい。内部電極２０から被吸着体までの距離が５０μｍ以上であれば、第２の接着剤層３２、第２の絶縁性有機フィルム４２、中間層５０、セラミックス下地層６１およびセラミックス表層６２からなる積層体の絶縁性を確保することができる。一方、内部電極２０から被吸着体までの距離が１２５μｍ以下であれば、十分な吸着力が発生する。 The distance from the internal electrode 20 to the object to be adsorbed, that is, the distance from the upper surface 21a of the first internal electrode 21 and the upper surface 22a of the second internal electrode 22 to the object to be adsorbed on the ceramic surface layer 62 (first). A second adhesive layer 32, a second insulating organic film 42, an intermediate layer 50, a ceramic base layer 61, and a ceramic surface layer present on the upper surface 21a of the internal electrode 21 and the upper surface 22a of the second internal electrode 22. The total thickness of 62) is preferably 50 μm to 125 μm. If the distance from the internal electrode 20 to the object to be adsorbed is 50 μm or more, a laminate composed of a second adhesive layer 32, a second insulating organic film 42, an intermediate layer 50, a ceramic base layer 61, and a ceramic surface layer 62. Insulation can be ensured. On the other hand, if the distance from the internal electrode 20 to the object to be adsorbed is 125 μm or less, sufficient adsorption force is generated.

接着剤層３０を構成する接着剤としては、エポキシ樹脂、フェノール樹脂、スチレン系ブロック共重合体、ポリアミド樹脂、アクリロニトリル－ブタジエン共重合体、ポリエステル樹脂、ポリイミド樹脂、シリコーン樹脂、アミン化合物、ビスマレイミド化合物等から選択される１種または２種以上の樹脂を主成分とする接着剤が用いられる。 Examples of the adhesive constituting the adhesive layer 30 include epoxy resin, phenol resin, styrene block copolymer, polyamide resin, acrylonitrile-butadiene copolymer, polyester resin, polyimide resin, silicone resin, amine compound, and bismaleimide compound. An adhesive containing one or more kinds of resins selected from the above and the like as a main component is used.

エポキシ樹脂としては、ビスフェノール型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、グリシジルエーテル型エポキシ樹脂、グリシジルエステル型エポキシ樹脂、グリシジルアミン型エポキシ樹脂、トリヒドロキシフェニルメタン型エポキシ樹脂、テトラグリシジルフェノールアルカン型エポキシ樹脂、ナフタレン型エポキシ樹脂、ジグリシジルジフェニルメタン型エポキシ樹脂、ジグリシジルビフェニル型エポキシ樹脂等の２官能基または多官能エポキシ樹脂等が挙げられる。これらの中でも、ビスフェノール型エポキシ樹脂が好ましい。ビスフェノール型エポキシ樹脂の中でも、ビスフェノールＡ型エポキシ樹脂が特に好ましい。また、エポキシ樹脂を主成分とする場合、必要に応じて、イミダゾール類、第３アミン類、フェノール類、ジシアンジアミド類、芳香族ジアミン類、有機過酸化物等のエポキシ樹脂用の硬化剤や硬化促進剤を配合することもできる。 Examples of the epoxy resin include bisphenol type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, glycidyl ether type epoxy resin, glycidyl ester type epoxy resin, glycidylamine type epoxy resin, trihydroxyphenylmethane type epoxy resin, and tetraglycidyl. Examples thereof include bifunctional groups such as phenol alkane type epoxy resin, naphthalene type epoxy resin, diglycidyl diphenylmethane type epoxy resin, and diglycidyl biphenyl type epoxy resin, or polyfunctional epoxy resin. Among these, bisphenol type epoxy resin is preferable. Among the bisphenol type epoxy resins, the bisphenol A type epoxy resin is particularly preferable. When the main component is an epoxy resin, if necessary, a curing agent for epoxy resins such as imidazoles, tertiary amines, phenols, dicyandiamides, aromatic diamines, and organic peroxides, and curing promotion Agents can also be added.

フェノール樹脂としては、アルキルフェノール樹脂、ｐ－フェニルフェノール樹脂、ビスフェノールＡ型フェノール樹脂等のノボラックフェノール樹脂、レゾールフェノール樹脂、ポリフェニルパラフェノール樹脂等が挙げられる。 Examples of the phenol resin include novolak phenol resins such as alkylphenol resins, p-phenylphenol resins and bisphenol A type phenol resins, resolphenol resins, and polyphenylparaphenol resins.

スチレン系ブロック共重合体としては、スチレン－ブタジエン－スチレンブロック共重合体（ＳＢＳ）、スチレン－イソプレン－スチレンブロック共重合体（ＳＩＳ）、スチレン－エチレン－プロピレン－スチレン共重合体（ＳＥＰＳ）等が挙げられる。 Examples of the styrene-based block copolymer include styrene-butadiene-styrene block copolymer (SBS), styrene-isoprene-styrene block copolymer (SIS), and styrene-ethylene-propylene-styrene copolymer (SEPS). Can be mentioned.

接着剤層３０（第１の接着剤層３１、第２の接着剤層３２）の厚さは、特に限定されないが、５μｍ～２０μｍであることが好ましく、１０μｍ～２０μｍであることがより好ましい。接着剤層３０（第１の接着剤層３１、第２の接着剤層３２）の厚さが５μｍ以上であれば、接着剤として十分に機能する。一方、接着剤層３０（第１の接着剤層３１、第２の接着剤層３２）の厚さが２０μｍ以下であれば、吸着力を損なうことなく、内部電極２０の電極間絶縁を確保することができる。 The thickness of the adhesive layer 30 (first adhesive layer 31, second adhesive layer 32) is not particularly limited, but is preferably 5 μm to 20 μm, and more preferably 10 μm to 20 μm. When the thickness of the adhesive layer 30 (first adhesive layer 31, second adhesive layer 32) is 5 μm or more, it sufficiently functions as an adhesive. On the other hand, when the thickness of the adhesive layer 30 (first adhesive layer 31, second adhesive layer 32) is 20 μm or less, the insulation between the electrodes of the internal electrodes 20 is ensured without impairing the adsorption force. be able to.

絶縁性有機フィルム４０を構成する材料としては、特に限定されず、例えば、ポリエチレンテレフタレート等のポリエステル類、ポリエチレン等のポリオレフィン類、ポリイミド、ポリアミド、ポリアミドイミド、ポリエーテルサルフォン、ポリフェニレンサルファイド、ポリエーテルケトン、ポリエーテルイミド、トリアセチルセルロース、シリコーンゴム、ポリテトラフルオロエチレン等が用いられる。これらの中でも、絶縁性に優れることから、ポリエステル類、ポリオレフィン類、ポリイミド、シリコーンゴム、ポリエーテルイミド、ポリエーテルサルフォン、ポリテトラフルオロエチレンが好ましく、ポリイミドがより好ましい。ポリイミドフィルムとして、例えば、東レ・デュポン社製のカプトン（商品名）、宇部興産社製 のユーピレックス（商品名）等が用いられる。 The material constituting the insulating organic film 40 is not particularly limited, and for example, polyesters such as polyethylene terephthalate, polyolefins such as polyethylene, polyimide, polyamide, polyamideimide, polyethersulfone, polyphenylene sulfide, and polyetherketone. , Polyetherimide, triacetylcellulose, silicone rubber, polytetrafluoroethylene and the like are used. Among these, polyesters, polyolefins, polyimides, silicone rubbers, polyetherimides, polyethersulfons, and polytetrafluoroethylene are preferable, and polyimides are more preferable because of their excellent insulating properties. As the polyimide film, for example, Kapton (trade name) manufactured by Toray DuPont Co., Ltd., Upirex (trade name) manufactured by Ube Kosan Co., Ltd., etc. are used.

絶縁性有機フィルム４０（第１の絶縁性有機フィルム４１、第２の絶縁性有機フィルム４２）の厚さは、特に限定されないが、１０μｍ～１００μｍであることが好ましく、１０μｍ～５０μｍであることがより好ましい。絶縁性有機フィルム４０（第１の絶縁性有機フィルム４１、第２の絶縁性有機フィルム４２）の厚さが１０μｍ以上であれば、絶縁性を確保することができる。一方、絶縁性有機フィルム４０（第１の絶縁性有機フィルム４１、第２の絶縁性有機フィルム４２）の厚さが１００μｍ以下であれば、十分な吸着力が発生する。 The thickness of the insulating organic film 40 (first insulating organic film 41, second insulating organic film 42) is not particularly limited, but is preferably 10 μm to 100 μm, and preferably 10 μm to 50 μm. More preferred. If the thickness of the insulating organic film 40 (first insulating organic film 41, second insulating organic film 42) is 10 μm or more, the insulating property can be ensured. On the other hand, if the thickness of the insulating organic film 40 (first insulating organic film 41, second insulating organic film 42) is 100 μm or less, sufficient adsorption force is generated.

中間層５０は、有機絶縁性樹脂および無機絶縁性樹脂の少なくとも一方と、無機充填剤および繊維状充填剤の少なくとも一方と、を含むことが好ましい。 The intermediate layer 50 preferably contains at least one of an organic insulating resin and an inorganic insulating resin, and at least one of an inorganic filler and a fibrous filler.

有機絶縁性樹脂としては、特に限定されず、例えば、ポリイミド系樹脂、エポキシ系樹脂、アクリル系樹脂等が挙げられる。
無機絶縁性樹脂としては、特に限定されず、例えば、シラン系樹脂、シリコーン系樹脂等が挙げられる。 The organic insulating resin is not particularly limited, and examples thereof include a polyimide resin, an epoxy resin, and an acrylic resin.
The inorganic insulating resin is not particularly limited, and examples thereof include a silane-based resin and a silicone-based resin.

中間層５０には、ポリシラザンを含有させることが好ましい。ポリシラザンとしては、例えば、当該分野で公知のものが挙げられる。ポリシラザンは、有機ポリシラザンであってもよく、無機ポリシラザンであってもよい。これらの材料は、１種を単独で用いてもよく、２種以上を混合して用いてもよい。 It is preferable that the intermediate layer 50 contains polysilazane. Examples of polysilazane include those known in the art. The polysilazane may be an organic polysilazane or an inorganic polysilazane. These materials may be used alone or in admixture of two or more.

中間層５０中の無機充填剤の含有量は、ポリシラザン１００質量部に対して１００質量部～３００質量部であることが好ましく、１５０質量部～２５０質量部であることがより好ましい。中間層５０中の無機充填剤の含有量が前記範囲内であれば、中間層５０の硬化物である樹脂膜表面に無機充填剤粒子が凹凸を形成することができるため、溶射材の粉末が無機充填剤粒子間に食い込み易く、前記樹脂膜表面に溶射材を強固に接着させることができる。 The content of the inorganic filler in the intermediate layer 50 is preferably 100 parts by mass to 300 parts by mass, and more preferably 150 parts by mass to 250 parts by mass with respect to 100 parts by mass of polysilazane. When the content of the inorganic filler in the intermediate layer 50 is within the above range, the inorganic filler particles can form irregularities on the surface of the resin film which is the cured product of the intermediate layer 50, so that the powder of the thermal spray material can be obtained. It is easy to bite between the inorganic filler particles, and the thermal spray material can be firmly adhered to the surface of the resin film.

無機充填剤としては、特に限定されないが、アルミナ、シリカおよびイットリアからなる群から選択される少なくとも１種であることが好ましい。
無機充填剤は、球形粉体および不定形粉体の少なくとも一方であることが好ましい。
なお、球形粉体とは、粉体粒子の角部を丸めた球状体のことである。また、不定形粉体とは、破砕状、板状、鱗片状、針状など形状が一定な形を取らないもののことである。 The inorganic filler is not particularly limited, but is preferably at least one selected from the group consisting of alumina, silica and ytria.
The inorganic filler is preferably at least one of a spherical powder and an amorphous powder.
The spherical powder is a sphere in which the corners of the powder particles are rounded. Further, the amorphous powder is a powder having a crushed shape, a plate shape, a scale shape, a needle shape, or the like, which does not have a constant shape.

無機充填剤の平均粒子径は、１μｍ～２０μｍであることが好ましい。無機充填剤が球形粉体の場合、その直径（外径）を粒子径とし、無機充填剤が不定形粉体の場合、その形状の最も長い箇所を粒子径とする。 The average particle size of the inorganic filler is preferably 1 μm to 20 μm. When the inorganic filler is a spherical powder, its diameter (outer diameter) is defined as the particle diameter, and when the inorganic filler is an amorphous powder, the longest portion of the shape is defined as the particle diameter.

繊維状充填剤は、植物繊維、無機繊維および繊維化された有機樹脂からなる群から選択される少なくとも１種であることが好ましい。
植物繊維としては、パルプ等が挙げられる。
無機繊維としては、アルミナからなる繊維等が挙げられる。
繊維化された有機樹脂としては、アラミドやテフロン（登録商標）等からなる繊維が挙げられる。 The fibrous filler is preferably at least one selected from the group consisting of plant fibers, inorganic fibers and fibrous organic resins.
Examples of the plant fiber include pulp and the like.
Examples of the inorganic fiber include a fiber made of alumina and the like.
Examples of the fibrous organic resin include fibers made of aramid, Teflon (registered trademark) and the like.

無機充填剤は、繊維状充填剤と併用することが好ましく、中間層５０全体（１００体積％）に対する、無機充填剤と繊維状充填剤の合計含有量は１０体積％～８０体積％であることが好ましい。中間層５０における無機充填剤と繊維状充填剤の合計含有量が上記の範囲内であれば、溶射により、中間層５０上にセラミックス層６０を均一に形成することができる。 The inorganic filler is preferably used in combination with the fibrous filler, and the total content of the inorganic filler and the fibrous filler is 10% by volume to 80% by volume with respect to the entire intermediate layer 50 (100% by volume). Is preferable. When the total content of the inorganic filler and the fibrous filler in the intermediate layer 50 is within the above range, the ceramic layer 60 can be uniformly formed on the intermediate layer 50 by thermal spraying.

中間層５０の厚さは、１μｍ～４０μｍであることが好ましく、５μｍ～２０μｍであることがより好ましい。中間層５０の厚さが１μｍ以上であれば、局所的に中間層５０が薄くなることがなく、溶射により、中間層５０上にセラミックス層６０均一に形成することができる。一方、中間層５０の厚さが４０μｍ以下であれば、十分な吸着力が発生する。 The thickness of the intermediate layer 50 is preferably 1 μm to 40 μm, more preferably 5 μm to 20 μm. When the thickness of the intermediate layer 50 is 1 μm or more, the intermediate layer 50 does not become thin locally, and the ceramic layer 60 can be uniformly formed on the intermediate layer 50 by thermal spraying. On the other hand, if the thickness of the intermediate layer 50 is 40 μm or less, sufficient adsorption force is generated.

セラミックス層６０を構成する材料としては、特に限定されず、例えば、窒化ホウ素、窒化アルミニウム、酸化ジルコニウム、酸化ケイ素、酸化スズ、酸化インジウム、石英ガラス、ソーダガラス、鉛ガラス、硼珪酸ガラス、窒化ジルコニウム、酸化チタン等が用いられる。これらの材料は、１種を単独で用いてもよく、２種以上を混合して用いてもよい。
これらの材料は、平均粒子径が１μｍ～２５μｍの粉体であることが好ましい。このような粉体を用いることにより、セラミックス層６０の空隙を減少させ、セラミックス層６０の耐電圧を向上させることができる。 The material constituting the ceramic layer 60 is not particularly limited, and for example, boron nitride, aluminum nitride, zirconium oxide, silicon oxide, tin oxide, indium oxide, quartz glass, soda glass, lead glass, borosilicate glass, and zirconium nitride. , Titanium oxide and the like are used. These materials may be used alone or in admixture of two or more.
These materials are preferably powders having an average particle size of 1 μm to 25 μm. By using such powder, the voids in the ceramic layer 60 can be reduced and the withstand voltage of the ceramic layer 60 can be improved.

セラミックス下地層６１の厚さは、１０μｍ～８０μｍであることが好ましく、４０μｍ～６０μｍであることがより好ましい。セラミックス下地層６１の厚さが１０μｍ以上であれば、十分な耐プラズマ性および耐電圧性を示す。一方、セラミックス下地層６１の厚さが８０μｍ以下であれば、十分な吸着力が発生する。 The thickness of the ceramic base layer 61 is preferably 10 μm to 80 μm, more preferably 40 μm to 60 μm. When the thickness of the ceramic base layer 61 is 10 μm or more, sufficient plasma resistance and withstand voltage resistance are exhibited. On the other hand, if the thickness of the ceramic base layer 61 is 80 μm or less, sufficient adsorption force is generated.

セラミックス表層６２の厚さは、５μｍ～２０μｍであることが好ましい。セラミックス表層６２の厚さが５μｍ以上であれば、セラミックス表層６２の全域にわたって、凹凸を形成できる。一方、セラミックス表層６２の厚さが２０μｍ以下であれば、十分な吸着力が発生する。 The thickness of the ceramic surface layer 62 is preferably 5 μm to 20 μm. When the thickness of the ceramic surface layer 62 is 5 μm or more, unevenness can be formed over the entire area of the ceramic surface layer 62. On the other hand, if the thickness of the ceramic surface layer 62 is 20 μm or less, sufficient adsorption force is generated.

セラミックス表層６２は、その表面を研磨することによって、その吸着力を向上することができ、その表面の凹凸を表面粗さＲａとして調整することができる。
ここで、表面粗さＲａとは、ＪＩＳ Ｂ０６０１－１９９４に規定される方法により測定した値を意味する。 By polishing the surface of the ceramic surface layer 62, the adsorption force thereof can be improved, and the unevenness of the surface thereof can be adjusted as the surface roughness Ra.
Here, the surface roughness Ra means a value measured by the method specified in JIS B0601-1994.

セラミックス表層６２の表面粗さＲａは、０．０５μｍ～０．５μｍであることが好ましい。セラミックス表層６２の表面粗さＲａが前記の範囲内であれば、被吸着体を良好に吸着することができる。セラミックス表層６２の表面粗さＲａが大きくなると、被吸着体とセラミックス表層６２との接触面積が小さくなるため、吸着力も小さくなる。 The surface roughness Ra of the ceramic surface layer 62 is preferably 0.05 μm to 0.5 μm. When the surface roughness Ra of the ceramic surface layer 62 is within the above range, the object to be adsorbed can be satisfactorily adsorbed. When the surface roughness Ra of the ceramic surface layer 62 becomes large, the contact area between the object to be adsorbed and the ceramic surface layer 62 becomes small, so that the adsorption force also becomes small.

以上説明した本実施形態の静電チャック装置１においては、複数の内部電極２０と、内部電極２０の厚さ方向の両面側に設けられた絶縁性有機フィルム４０と、少なくとも内部電極２０および絶縁性有機フィルム４０を含む積層体２の厚さ方向の上面２ａに中間層５０を介して積層されたセラミックス層６０と、を備える。したがって、少なくとも積層体２の厚さ方向の上面２ａ側において、耐プラズマ性および耐電圧性が向上し、使用中の異常放電を抑制することができる。そのため、本実施形態の静電チャック装置１は、吸着性にも優れる。 In the electrostatic chuck device 1 of the present embodiment described above, a plurality of internal electrodes 20, an insulating organic film 40 provided on both sides of the internal electrodes 20 in the thickness direction, at least the internal electrodes 20, and insulating properties are provided. A ceramic layer 60 laminated via an intermediate layer 50 is provided on the upper surface 2a of the laminate 2 including the organic film 40 in the thickness direction. Therefore, at least on the upper surface 2a side in the thickness direction of the laminated body 2, plasma resistance and withstand voltage resistance are improved, and abnormal discharge during use can be suppressed. Therefore, the electrostatic chuck device 1 of the present embodiment is also excellent in adsorptivity.

本実施形態の静電チャック装置１において、セラミックス層６０が、中間層５０を介して積層体２の外面全面を覆っていれば、積層体２の上面２ａ側および側面２ｂ側において、耐プラズマ性および耐電圧性が向上し、使用中の異常放電を抑制することができる。そのため、本実施形態の静電チャック装置１は、より吸着性にも優れる。 In the electrostatic chuck device 1 of the present embodiment, if the ceramic layer 60 covers the entire outer surface of the laminated body 2 via the intermediate layer 50, plasma resistance is achieved on the upper surface 2a side and the side surface 2b side of the laminated body 2. And the withstand voltage is improved, and abnormal discharge during use can be suppressed. Therefore, the electrostatic chuck device 1 of the present embodiment is more excellent in adsorptivity.

本実施形態の静電チャック装置１において、セラミックス層６０が、セラミックス下地層６１と、セラミックス下地層６１の上面６１ａに形成され、凹凸を有するセラミックス表層６２と、を有することにより、所望の吸着力に制御することができる。 In the electrostatic chuck device 1 of the present embodiment, the ceramic layer 60 has a ceramic base layer 61 and a ceramic surface layer 62 formed on the upper surface 61a of the ceramic base layer 61 and having irregularities, whereby a desired adsorption force is obtained. Can be controlled to.

本実施形態の静電チャック装置１において、中間層５０が、有機絶縁性樹脂および無機絶縁性樹脂の少なくとも一方と、無機充填剤および繊維状充填剤の少なくとも一方と、を含むことにより、中間層５０上にセラミックス層６０均一に形成することができる。 In the electrostatic chuck device 1 of the present embodiment, the intermediate layer 50 contains at least one of an organic insulating resin and an inorganic insulating resin and at least one of an inorganic filler and a fibrous filler, whereby the intermediate layer is contained. The ceramic layer 60 can be uniformly formed on the 50.

本実施形態の静電チャック装置１において、無機充填剤が、球形粉体および不定形粉体の少なくとも一方であることにより、中間層５０における樹脂中の充填状態が均一分散または最密充填となるように配合設計が可能で、さらに樹脂中から充填剤の一部が露出するような設計とすることで、セラミックス下地層６１との密着性を向上させることが可能となる。 In the electrostatic chuck device 1 of the present embodiment, since the inorganic filler is at least one of the spherical powder and the amorphous powder, the filling state in the resin in the intermediate layer 50 becomes uniformly dispersed or most densely filled. By designing the composition so that a part of the filler is exposed from the resin, it is possible to improve the adhesion to the ceramic base layer 61.

本実施形態の静電チャック装置１において、繊維状充填剤が、植物繊維、無機繊維および繊維化された有機樹脂からなる群から選択される少なくとも１種であることにより、中間層５０の強度と靱性が向上し、中間層５０の表面に繊維を配置することによるセラミックス下地層６１との密着性が向上し、中間層５０を挟んでいるセラミックス下地層６１と絶縁性有機フィルム４０との熱膨張率差による歪を緩和することが可能となる。 In the electrostatic chuck device 1 of the present embodiment, the fibrous filler is at least one selected from the group consisting of plant fibers, inorganic fibers and fibrous organic resins, whereby the strength of the intermediate layer 50 is increased. The toughness is improved, the adhesion to the ceramic base layer 61 is improved by arranging the fibers on the surface of the intermediate layer 50, and the thermal expansion of the ceramic base layer 61 sandwiching the intermediate layer 50 and the insulating organic film 40. It is possible to alleviate the distortion caused by the rate difference.

本実施形態の静電チャック装置１において、絶縁性有機フィルムが、ポリイミドフィルムであることにより、耐電圧性が向上する。 In the electrostatic chuck device 1 of the present embodiment, the withstand voltage is improved because the insulating organic film is a polyimide film.

本実施形態の静電チャック装置１において、球形粉体および不定形粉体からなる無機充填剤が、アルミナ、シリカおよびイットリアからなる群から選択される少なくとも１種であることにより、耐プラズマ性および耐電圧性が向上する。 In the electrostatic chuck device 1 of the present embodiment, the inorganic filler composed of spherical powder and amorphous powder is at least one selected from the group consisting of alumina, silica and ittria, whereby plasma resistance and plasma resistance and Withstand voltage is improved.

［静電チャックの製造方法］
図１を参照して、本実施形態の静電チャック装置１の製造方法を説明する。
第１の絶縁性有機フィルム４１の表面（第１の絶縁性有機フィルム４１の厚さ方向の上面）４１ａに、銅等の金属を蒸着して、金属の薄膜を形成する。その後、エッチングを行って、金属の薄膜を所定の形状にパターニングして、第１の内部電極２１と第２の内部電極２２を形成する。 [Manufacturing method of electrostatic chuck]
A method of manufacturing the electrostatic chuck device 1 of the present embodiment will be described with reference to FIG.
A metal such as copper is vapor-deposited on the surface of the first insulating organic film 41 (upper surface in the thickness direction of the first insulating organic film 41) 41a to form a thin metal film. After that, etching is performed to pattern the metal thin film into a predetermined shape to form the first internal electrode 21 and the second internal electrode 22.

次いで、内部電極２０の上面２０ａに、第２の接着剤層３２を介して、第２の絶縁性有機フィルム４２を貼着する。 Next, the second insulating organic film 42 is attached to the upper surface 20a of the internal electrode 20 via the second adhesive layer 32.

次いで、第１の絶縁性有機フィルム４１の下面４１ｂが基板１０の表面１０ａ側となるように、第１の絶縁性有機フィルム４１、内部電極２０、第２の接着剤層３２および第２の絶縁性有機フィルム４２からなる積層体を、第１の接着剤層３１を介して、基板１０の表面１０ａに接合する。 Next, the first insulating organic film 41, the internal electrode 20, the second adhesive layer 32, and the second insulation so that the lower surface 41b of the first insulating organic film 41 is on the surface 10a side of the substrate 10. The laminate made of the sex organic film 42 is bonded to the surface 10a of the substrate 10 via the first adhesive layer 31.

次いで、内部電極２０および絶縁性有機フィルム４０を含む積層体２の外面全面を覆うように、中間層５０を形成する。
中間層５０を形成する方法は、積層体２の外面全面を覆うように中間層５０を形成することができれば、特に限定されない。中間層５０を形成する方法としては、例えば、バーコート法、スピンコート法、スプレーコート法等が挙げられる。 Next, the intermediate layer 50 is formed so as to cover the entire outer surface of the laminate 2 including the internal electrode 20 and the insulating organic film 40.
The method for forming the intermediate layer 50 is not particularly limited as long as the intermediate layer 50 can be formed so as to cover the entire outer surface of the laminated body 2. Examples of the method for forming the intermediate layer 50 include a bar coating method, a spin coating method, and a spray coating method.

次いで、中間層５０の外面全面を覆うように、セラミックス下地層６１を形成する。
セラミックス下地層６１を形成する方法は、例えば、セラミックス下地層６１を構成する材料を含むスラリーを中間層５０の外面全面に塗布し、焼結してセラミックス下地層６１を形成する方法、セラミックス下地層６１を構成する材料を中間層５０の外面全面に溶射してセラミックス下地層６１を形成する方法等が挙げられる。
ここで、溶射とは、被膜（本実施形態では、セラミックス下地層６１）となる材料を加熱溶融後、圧縮ガスを用いて被処理体へ射出することにより成膜する方法のことである。 Next, the ceramic base layer 61 is formed so as to cover the entire outer surface of the intermediate layer 50.
The method for forming the ceramic base layer 61 is, for example, a method in which a slurry containing a material constituting the ceramic base layer 61 is applied to the entire outer surface of the intermediate layer 50 and sintered to form the ceramic base layer 61. Examples thereof include a method of forming the ceramic base layer 61 by spraying the material constituting the 61 onto the entire outer surface of the intermediate layer 50.
Here, thermal spraying is a method of forming a film by heating and melting a material to be a coating film (ceramic base layer 61 in the present embodiment) and then injecting it into an object to be treated using a compressed gas.

次いで、セラミックス下地層６１の上面６１ａに、セラミックス表層６２を形成する。
セラミックス表層６２を形成する方法は、例えば、セラミックス下地層６１の上面６１ａに、所定の形状のマスキングを施した後、セラミックス表層６２を構成する材料をセラミックス下地層６１の上面６１ａに溶射してセラミックス表層６２を形成する方法、セラミックス表層６２を構成する材料をセラミックス下地層６１の上面６１ａ全面に溶射してセラミックス表層６２を形成した後、そのセラミックス表層６２を、ブラスト処理により削って、セラミックス表層６２を凹凸形状に形成する方法等が挙げられる。 Next, the ceramic surface layer 62 is formed on the upper surface 61a of the ceramic base layer 61.
The method for forming the ceramic surface layer 62 is, for example, to mask the upper surface 61a of the ceramic base layer 61 with a predetermined shape, and then spray the material constituting the ceramic surface layer 62 onto the upper surface 61a of the ceramic base layer 61 to form the ceramics. Method for forming the surface layer 62, the material constituting the ceramic surface layer 62 is sprayed on the entire upper surface 61a of the ceramic base layer 61 to form the ceramic surface layer 62, and then the ceramic surface layer 62 is scraped by a blast treatment to form the ceramic surface layer 62. Examples thereof include a method of forming the ceramics into an uneven shape.

以上の工程により、本実施形態の静電チャック装置１を作製することができる。 By the above steps, the electrostatic chuck device 1 of the present embodiment can be manufactured.

以下、実施例および比較例により本発明をさらに具体的に説明するが、本発明は以下の実施例に限定されるものではない。 Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples, but the present invention is not limited to the following Examples.

［実施例１］
第１の絶縁性有機フィルム４１として、膜厚１２．５μｍのポリイミドフィルム（商品名：カプトン、東レ・デュポン社製）の片面に銅を９μｍの厚さでメッキした。その銅箔表面にフォトレジストを塗布した後、パターン露光後に現像処理を行い、エッチングにより不要な銅箔を除去した。その後、ポリイミドフィルム上の銅箔を洗浄することにより、フォトレジストを除去し、第１の内部電極２１、第２の内部電極２２を形成した。この第１の内部電極２１および第２の内部電極２２上に、第２の接着剤層３２として乾燥および加熱により半硬化させた絶縁性接着剤シートを積層した。絶縁性接着剤シートとしては、ビスマレイミド樹脂２７質量部、ジアミノシロキサン３質量部、レゾールフェノール樹脂２０質量部、ビフェニルエポキシ樹脂１０質量部、およびエチルアクリレート－ブチルアクリレート－アクリロニトリル共重合体２４０質量部を、適量のテトラヒドロフランに混合溶解したものをシート状に成形したものを用いた。その後、第２の絶縁性有機フィルム４２として、膜厚１２．５μｍのポリイミドフィルム（商品名：カプトン、東レ・デュポン社製）を貼着し、熱処理によって接着させた積層体を得た。なお、乾燥後の第２の接着剤層３２の厚さは２０μｍであった。 [Example 1]
As the first insulating organic film 41, copper was plated on one side of a polyimide film having a thickness of 12.5 μm (trade name: Kapton, manufactured by Toray DuPont) to a thickness of 9 μm. After applying a photoresist to the copper foil surface, a development process was performed after pattern exposure, and unnecessary copper foil was removed by etching. Then, by cleaning the copper foil on the polyimide film, the photoresist was removed to form the first internal electrode 21 and the second internal electrode 22. An insulating adhesive sheet semi-cured by drying and heating as a second adhesive layer 32 was laminated on the first internal electrode 21 and the second internal electrode 22. As the insulating adhesive sheet, 27 parts by mass of bismaleimide resin, 3 parts by mass of diaminosiloxane, 20 parts by mass of resolphenol resin, 10 parts by mass of biphenyl epoxy resin, and 240 parts by mass of ethyl acrylate-butyl acrylate-acrylonitrile copolymer are used. , A sheet-like product obtained by mixing and dissolving in an appropriate amount of tetrahydrofuran was used. Then, as the second insulating organic film 42, a polyimide film having a thickness of 12.5 μm (trade name: Kapton, manufactured by Toray DuPont) was attached, and a laminate was obtained by heat treatment. The thickness of the second adhesive layer 32 after drying was 20 μm.

さらに、前記積層体における第１の絶縁性有機フィルム４１の第１の内部電極２１および第２の内部電極２２が形成された面とは反対側の面に、第１の接着剤層３１として上記半硬化させた絶縁性接着剤シートと同じ組成の絶縁性接着剤からなるシートを積層した。その後、積層体をアルミニウム製の基板１０に貼着し、熱処理により接着させた。なお、乾燥後の第１の接着剤層３１の厚さは１０μｍであった。 Further, as the first adhesive layer 31, the surface opposite to the surface on which the first internal electrode 21 and the second internal electrode 22 of the first insulating organic film 41 are formed in the laminated body is described above. A sheet made of an insulating adhesive having the same composition as the semi-cured insulating adhesive sheet was laminated. Then, the laminate was attached to the aluminum substrate 10 and adhered by heat treatment. The thickness of the first adhesive layer 31 after drying was 10 μm.

次に、ポリシラザン１００質量部とアルミナからなる無機充填剤（平均粒子径：３μｍ）２００質量部とを、希釈媒体としての酢酸ブチルに混合し、さらに超音分散機により無機充填剤を均一に分散させて塗料を作製した。 Next, 100 parts by mass of polysilazane and 200 parts by mass of an inorganic filler composed of alumina (average particle size: 3 μm) are mixed with butyl acetate as a dilution medium, and the inorganic filler is uniformly dispersed by a supersonic disperser. The paint was prepared.

次に、前記基板１０に接着させた積層体の第２の絶縁性有機フィルム４２の表面と前記積層体２側面に、前記塗料をスプレーした後、加熱乾燥させて、中間層５０を形成した。なお、第２の絶縁性有機フィルム４２の表面上の乾燥後における中間層５０の厚さは１０μｍであった。 Next, the paint was sprayed on the surface of the second insulating organic film 42 of the laminate adhered to the substrate 10 and the side surface of the laminate 2, and then heated and dried to form the intermediate layer 50. The thickness of the intermediate layer 50 after drying on the surface of the second insulating organic film 42 was 10 μm.

次に、プラズマ溶射法によりアルミナ（Ａｌ２Ｏ３）の粉末（平均粒子径：８μｍ）を前記中間層５０の全表面に溶射し、厚さ５０μｍのセラミックス下地層６１を形成した。 Next, a powder of alumina (Al 2 O 3 ) (average particle size: 8 μm) was sprayed onto the entire surface of the intermediate layer 50 by a plasma spraying method to form a ceramic base layer 61 having a thickness of 50 μm.

次いで、セラミックス下地層６１の表面に、所定の形状のマスキングを施した後、上記のアルミナ（Ａｌ２Ｏ３）の粉末（平均粒子径：８μｍ）をセラミックス下地層６１の表面に溶射し、厚さ１５μｍのセラミックス表層６２を形成した。 Next, after masking the surface of the ceramic base layer 61 with a predetermined shape, the above-mentioned alumina (Al 2 O 3 ) powder (average particle size: 8 μm) is sprayed onto the surface of the ceramic base layer 61 to increase the thickness. A ceramic surface layer 62 having a size of 15 μm was formed.

次に、被吸着物を吸着するセラミックス表層６２の吸着面をダイヤモンド砥石にて平面研削し、実施例１の静電チャック装置を得た。
得られた静電チャック装置の表面をＪＩＳ Ｂ０６０１－１９９４により測定した結果、表面粗さＲａは０．３μｍであった。 Next, the adsorption surface of the ceramic surface layer 62 that adsorbs the object to be adsorbed was surface-ground with a diamond grindstone to obtain the electrostatic chuck device of Example 1.
As a result of measuring the surface of the obtained electrostatic chuck device by JIS B0601-1994, the surface roughness Ra was 0.3 μm.

［実施例２］
前記実施例１において、第１の絶縁性有機フィルム４１の厚さと第２の絶縁性有機フィルム４２の厚さを２５μｍに変更した以外は実施例１と同様にして、実施例２の静電チャック装置を得た。 [Example 2]
In the first embodiment, the electrostatic chuck of the second embodiment is the same as that of the first embodiment except that the thickness of the first insulating organic film 41 and the thickness of the second insulating organic film 42 are changed to 25 μm. Obtained the device.

［実施例３］
前記実施例１において、第１の絶縁性有機フィルム４１の厚さと第２の絶縁性有機フィルム４２の厚さを３８μｍ、第２の接着剤層３２の厚さを１０μｍ、第１の内部電極２１の厚さと第２の内部電極２２の厚さを５μｍに変更した以外は実施例１と同様にして、実施例３の静電チャック装置を得た。 [Example 3]
In the first embodiment, the thickness of the first insulating organic film 41 and the thickness of the second insulating organic film 42 are 38 μm, the thickness of the second adhesive layer 32 is 10 μm, and the first internal electrode 21. The electrostatic chuck device of Example 3 was obtained in the same manner as in Example 1 except that the thickness of the second internal electrode 22 was changed to 5 μm.

［比較例１］
前記実施例１において、第１の絶縁性有機フィルム４１の厚さと第２の絶縁性有機フィルム４２の厚さを５０μｍ、セラミックス下地層６１の厚さを３０μｍ、中間層５０の厚さを１５μｍ、第１の内部電極２１の厚さと第２の内部電極２２の厚さを５μｍ、第１の接着剤層３１の厚さを２０μｍに変更した以外は実施例１と同様にして、比較例１の静電チャック装置を得た。 [Comparative Example 1]
In Example 1, the thickness of the first insulating organic film 41 and the thickness of the second insulating organic film 42 are 50 μm, the thickness of the ceramic base layer 61 is 30 μm, and the thickness of the intermediate layer 50 is 15 μm. Comparative Example 1 was carried out in the same manner as in Example 1 except that the thickness of the first internal electrode 21 and the thickness of the second internal electrode 22 were changed to 5 μm and the thickness of the first adhesive layer 31 was changed to 20 μm. Obtained an electrostatic chuck device.

［比較例２］
前記比較例１において、セラミックス下地層６１の厚さを５０μｍに変更した以外は比較例１と同様にして、比較例２の静電チャック装置を得た。 [Comparative Example 2]
In Comparative Example 1, the electrostatic chuck device of Comparative Example 2 was obtained in the same manner as in Comparative Example 1 except that the thickness of the ceramic base layer 61 was changed to 50 μm.

［比較例３］
前記比較例２において、セラミックス表層６２の厚さを２０μｍ、セラミックス下地層６１の厚さを８０μｍ、中間層５０の厚さを３０μｍに変更した以外は比較例２と同様にして比較例３の静電チャック装置を得た。 [Comparative Example 3]
In Comparative Example 2, the static electricity of Comparative Example 3 is the same as that of Comparative Example 2 except that the thickness of the ceramic surface layer 62 is changed to 20 μm, the thickness of the ceramic base layer 61 is changed to 80 μm, and the thickness of the intermediate layer 50 is changed to 30 μm. Obtained an electric chuck device.

［比較例４］
前記比較例３において、中間層５０を設けずに、第２の絶縁性有機フィルム４２の表面に直接プラズマ溶射法によりアルミナ（Ａｌ２Ｏ３）の粉末（平均粒子径：８μｍ）を溶射した以外は比較例３と同様にして、比較例４の静電チャック装置を得た。 [Comparative Example 4]
In Comparative Example 3, the powder of alumina (Al 2 O 3 ) (average particle size: 8 μm) was sprayed directly onto the surface of the second insulating organic film 42 by a plasma spraying method without providing the intermediate layer 50. Obtained the electrostatic chuck device of Comparative Example 4 in the same manner as in Comparative Example 3.

前記実施例１～実施例３および比較例１～比較例４で得られた静電チャック装置における各層の厚さと、その合計値を表１に示す。 Table 1 shows the thicknesses of the layers in the electrostatic chuck devices obtained in Examples 1 to 3 and Comparative Examples 1 to 4 and their total values.

Figure 2022058894000002
Figure 2022058894000002

次に、前記実施例１～実施例３および比較例１～比較例４で得られた静電チャック装置を用いて、耐電圧特性、吸着力および耐プラズマ性を評価した。その結果を表２に示す。 Next, the withstand voltage characteristics, adsorption force, and plasma resistance were evaluated using the electrostatic chuck devices obtained in Examples 1 to 3 and Comparative Examples 1 to 4. The results are shown in Table 2.

［評価項目］
＜耐電圧特性＞
耐電圧特性は、真空下（１０Ｐａ）にて静電チャック装置に高圧電源装置より、第１の内部電極２１と第２の内部電極２２に±２．５ｋＶの電圧を印加し、２分間保持することにより評価した。２分間の間、目視にて観察をし、変化がなかったものを「合格」、電極同士または絶縁性有機フィルムおよびセラミックス層に絶縁破壊が生じたものを「不合格」とした。 [Evaluation item]
<Withstand voltage characteristics>
Withstanding voltage characteristics are maintained for 2 minutes by applying a voltage of ± 2.5 kV to the first internal electrode 21 and the second internal electrode 22 from the high-voltage power supply device under vacuum (10 Pa). It was evaluated by. Visual observation was performed for 2 minutes, and those with no change were regarded as "pass", and those with dielectric breakdown between the electrodes or the insulating organic film and the ceramic layer were regarded as "fail".

＜吸着力＞
吸着力は、被吸着体としてシリコン製ダミーウェハを用い、真空下（１０Ｐａ以下）にて静電チャック装置表面に吸着させ、第１の内部電極２１と第２の内部電極２２に±２．５ｋＶの電圧を印加した後、３０秒間保持した。電圧を印加した状態のまま基板１０に設けられた貫通穴からヘリウムガスを流し、ガス圧力を上げながらヘリウムガスのリーク量を測定した。ガス圧力１００Ｔｏｒｒ時にダミーウェハが安定吸着できるものを「合格」、安定吸着できないものを「不合格」とした。安定吸着とはヘリウムガス圧力を高めることによりウェハが浮いてしまい、ヘリウムリーク量が急激に増加する現象が発生しない状態をいう。 <Adsorption power>
The adsorption force is ± 2.5 kV on the first internal electrode 21 and the second internal electrode 22 by adsorbing to the surface of the electrostatic chuck device under vacuum (10 Pa or less) using a silicon dummy wafer as the object to be adsorbed. After applying the voltage, it was held for 30 seconds. Helium gas was flowed through a through hole provided in the substrate 10 with the voltage applied, and the amount of helium gas leak was measured while increasing the gas pressure. Those in which the dummy wafer can be stably adsorbed at a gas pressure of 100 Torr are regarded as "pass", and those in which stable adsorption cannot be performed are regarded as "fail". Stable adsorption refers to a state in which the wafer floats due to the increase in helium gas pressure, and the phenomenon that the amount of helium leak increases sharply does not occur.

＜耐プラズマ性＞
耐プラズマ性は、平行平板型ＲＩＥ装置に静電チャック装置を設置した後、真空下（２０Ｐａ以下）、高周波電源（出力２５０Ｗ）にて、酸素ガス（１０ｓｃｃｍ）および四フッ化炭素ガス（４０ｓｃｃｍ）を導入し、２４時間暴露後の静電チャック装置表面状態の変化を目視にて観察した。表面全体にセラミックス層が残存していたものを「合格」、一部セラミックス層が消失し、絶縁性有機フィルムが露出していたものを「不合格」とした。 <Plasma resistance>
Plasma resistance is measured by oxygen gas (10 sccm) and carbon tetrafluoride gas (40 sccm) under vacuum (20 Pa or less) and high frequency power supply (output 250 W) after installing the electrostatic chuck device in the parallel plate type RIE device. Was introduced, and changes in the surface condition of the electrostatic chuck device after exposure for 24 hours were visually observed. The one in which the ceramic layer remained on the entire surface was regarded as "pass", and the one in which the ceramic layer was partially disappeared and the insulating organic film was exposed was regarded as "fail".

Figure 2022058894000003
Figure 2022058894000003

表２から明らかなように、実施例１～実施例３で得られた静電チャック装置は、基板１０の表面１０ａからセラミックス表層６２の表面までの距離が２００μｍ以下という薄膜であるにもかかわらず、耐電圧特性、耐プラズマ性に優れ、結果として吸着力に優れていることが確認された。 As is clear from Table 2, the electrostatic chuck devices obtained in Examples 1 to 3 are thin films in which the distance from the surface 10a of the substrate 10 to the surface of the ceramic surface layer 62 is 200 μm or less. It was confirmed that the withstand voltage characteristics and plasma resistance were excellent, and as a result, the adsorption power was excellent.

一方、比較例１で得られた静電チャック装置は、セラミックス下地層６１が薄いため、十分な耐プラズマ性が得られなかった。比較例２および比較例３で得られた静電チャック装置は、基板１０の表面１０ａからセラミックス表層６２の表面までの距離が２００μｍを超えるため、吸着力に劣ることが確認された。
また、比較例４で得られた静電チャック装置は、中間層５０を有していないため、第２の絶縁性有機フィルム４２の表面にセラミックス溶射材が十分に付着しておらず、耐プラズマ性に劣ることが確認された。 On the other hand, in the electrostatic chuck device obtained in Comparative Example 1, sufficient plasma resistance could not be obtained because the ceramic base layer 61 was thin. It was confirmed that the electrostatic chuck devices obtained in Comparative Example 2 and Comparative Example 3 were inferior in adsorption power because the distance from the surface 10a of the substrate 10 to the surface of the ceramic surface layer 62 exceeded 200 μm.
Further, since the electrostatic chuck device obtained in Comparative Example 4 does not have the intermediate layer 50, the ceramic spraying material does not sufficiently adhere to the surface of the second insulating organic film 42, and the plasma resistance is reduced. It was confirmed that it was inferior in sex.

本発明の静電チャック装置によれば、内部電極およびその厚さ方向の両面側に設けられた絶縁性有機フィルムを含む積層体の厚さ方向の上面に中間層を介してセラミックス層を積層することにより、優れた耐プラズマ性と耐電圧特性を有しながら、高い吸着力を得ることができる。したがって、本発明の静電チャック装置によれば、半導体製造プロセスにおけるドライエッチング装置用ウエハ等の導電体または半導体を安定に静電吸着保持することができる。 According to the electrostatic chuck device of the present invention, a ceramic layer is laminated on the upper surface in the thickness direction of a laminate containing an internal electrode and an insulating organic film provided on both sides in the thickness direction thereof via an intermediate layer. This makes it possible to obtain a high adsorption force while having excellent plasma resistance and withstand voltage characteristics. Therefore, according to the electrostatic chuck device of the present invention, a conductor or a semiconductor such as a wafer for a dry etching device in a semiconductor manufacturing process can be stably electrostatically adsorbed and held.

１ 静電チャック装置
２ 積層体
１０ 基板
２０ 内部電極
２１ 第１の内部電極
２２ 第２の内部電極
３０ 接着剤層
３１ 第１の接着剤層
３２ 第２の接着剤層
４０ 絶縁性有機フィルム
４１ 第１の絶縁性有機フィルム
４２ 第２の絶縁性有機フィルム
５０ 中間層
６０ セラミックス層
６１ セラミックス下地層
６２ セラミックス表層 1 Electrostatic chuck device 2 Laminated body 10 Substrate 20 Internal electrode 21 First internal electrode 22 Second internal electrode 30 Adhesive layer 31 First adhesive layer 32 Second adhesive layer 40 Insulating organic film 41 First 1 Insulating Organic Film 42 Second Insulating Organic Film 50 Intermediate Layer 60 Ceramics Layer 61 Ceramic Underlayer 62 Ceramics Surface Layer

Claims (8)

複数の内部電極と、該内部電極の厚さ方向の両面側に設けられた絶縁性有機フィルムと、少なくとも前記内部電極および前記絶縁性有機フィルムを含む積層体の厚さ方向の上面に中間層を介して積層されたセラミックス層と、を備え、
前記セラミックス層は、セラミックス下地層と、該セラミックス下地層の上面に形成され、凹凸を有するセラミックス表層とを有し、
前記絶縁性有機フィルムは、前記内部電極の厚さ方向の下面側に設けられた第１の絶縁性有機フィルムと前記内部電極の厚さ方向の上面側に設けられた第２の絶縁性有機フィルムとからなり、
前記第１の絶縁性有機フィルムの前記内部電極とは反対側の面に第１の接着剤層が設けられ、
前記第１の絶縁性有機フィルムおよび前記第１の絶縁性有機フィルムの厚さ方向の上面側に設けられた前記内部電極と前記第２の絶縁性有機フィルムの間に第２の接着剤層が設けられ、
前記セラミックス下地層の厚さ、前記セラミックス表層の厚さ、前記中間層の厚さ、前記第２の接着剤層の厚さ、および前記第２の絶縁性有機フィルムの厚さの合計が１２５μｍ以下であることを特徴とする静電チャック装置。 An intermediate layer is provided on the upper surface in the thickness direction of the laminate including the plurality of internal electrodes, the insulating organic films provided on both sides of the internal electrodes in the thickness direction, and at least the internal electrodes and the insulating organic film. With a ceramic layer laminated through,
The ceramic layer has a ceramic base layer and a ceramic surface layer formed on the upper surface of the ceramic base layer and having irregularities.
The insulating organic film is a first insulating organic film provided on the lower surface side in the thickness direction of the internal electrode and a second insulating organic film provided on the upper surface side in the thickness direction of the internal electrode. Consists of
A first adhesive layer is provided on the surface of the first insulating organic film opposite to the internal electrode.
A second adhesive layer is provided between the internal electrode provided on the upper surface side of the first insulating organic film and the first insulating organic film in the thickness direction and the second insulating organic film. Provided,
The total of the thickness of the ceramic base layer, the thickness of the ceramic surface layer, the thickness of the intermediate layer, the thickness of the second adhesive layer, and the thickness of the second insulating organic film is 125 μm or less. An electrostatic chuck device characterized by being. 前記セラミックス層は、前記中間層を介して前記積層体の外面全面を覆うことを特徴とする請求項１に記載の静電チャック装置。 The electrostatic chuck device according to claim 1, wherein the ceramic layer covers the entire outer surface of the laminated body via the intermediate layer. 前記中間層は、有機絶縁性樹脂および無機絶縁性樹脂の少なくとも一方と、無機充填剤および繊維状充填剤の少なくとも一方と、を含むことを特徴とする請求項１または２に記載の静電チャック装置。 The electrostatic chuck according to claim 1 or 2, wherein the intermediate layer contains at least one of an organic insulating resin and an inorganic insulating resin, and at least one of an inorganic filler and a fibrous filler. Device. 前記無機充填剤は、球形粉体および不定形粉体の少なくとも一方であることを特徴とする請求項３に記載の静電チャック装置。 The electrostatic chuck device according to claim 3, wherein the inorganic filler is at least one of a spherical powder and an amorphous powder. 前記球形粉体および前記不定形粉体は、アルミナ、シリカおよびイットリアからなる群から選択される少なくとも１種であることを特徴とする請求項４に記載の静電チャック装置。 The electrostatic chuck device according to claim 4, wherein the spherical powder and the amorphous powder are at least one selected from the group consisting of alumina, silica, and itria. 前記繊維状充填剤は、植物繊維、無機繊維および繊維化された有機樹脂からなる群から選択される少なくとも１種であることを特徴とする請求項３～５のいずれか１項に記載の静電チャック装置。 The static electricity according to any one of claims 3 to 5, wherein the fibrous filler is at least one selected from the group consisting of plant fibers, inorganic fibers and fibrous organic resins. Electric chuck device. 前記絶縁性有機フィルムは、ポリイミドフィルムであることを特徴とする請求項１～６のいずれか１項に記載の静電チャック装置。 The electrostatic chuck device according to any one of claims 1 to 6, wherein the insulating organic film is a polyimide film. 前記第１の接着剤層の厚さ、前記第１の絶縁性有機フィルムの厚さ、前記内部電極の厚さ、前記第２の接着剤層の厚さ、前記第２の絶縁性有機フィルムの厚さ、前記中間層の厚さ、および前記セラミックス層の厚さの合計が２００μｍ以下であることを特徴とする請求項１～７のいずれか１項に記載の静電チャック装置。 The thickness of the first adhesive layer, the thickness of the first insulating organic film, the thickness of the internal electrode, the thickness of the second adhesive layer, the thickness of the second insulating organic film. The electrostatic chuck device according to any one of claims 1 to 7, wherein the total thickness, the thickness of the intermediate layer, and the thickness of the ceramic layer is 200 μm or less.
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