JP2022029819A - Rectifier, production method of rectifier, semiconductor production device and semiconductor production method - Google Patents

Rectifier, production method of rectifier, semiconductor production device and semiconductor production method Download PDF

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JP2022029819A
JP2022029819A JP2020133339A JP2020133339A JP2022029819A JP 2022029819 A JP2022029819 A JP 2022029819A JP 2020133339 A JP2020133339 A JP 2020133339A JP 2020133339 A JP2020133339 A JP 2020133339A JP 2022029819 A JP2022029819 A JP 2022029819A
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ventilation
optical path
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rectifying device
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健志 松田
Kenji Matsuda
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Canon Inc
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Abstract

To provide a semiconductor production device capable of enhancing measurement accuracy and stability of a laser interferometer and being suitable for formation of ultrafine patterns.SOLUTION: A rectifier for rectifying an air flow toward an optical path of a laser beam, comprises a plurality of ventilation flues which connect between a rectangular inflow port and an outflow port having an aperture area larger than that of the inflow port. The ventilation flues include ventilation flues different in aperture areas of the inflow ports. Among the ventilation flues different in the aperture areas of the inflow ports, a ventilation flue with a relatively small aperture area of the inflow port is located at a position into which an air flow having a relatively high flow rate flows.SELECTED DRAWING: Figure 2

Description

本発明は、半導体素子等の製造に用いられる半導体製造装置に関する。特に、ウエハなどの被露光基板の位置合わせに用いるレーザ干渉計の計測精度を高めるために、レーザビームの光路となる空間の空調を行う技術に関する。 The present invention relates to a semiconductor manufacturing apparatus used for manufacturing semiconductor devices and the like. In particular, the present invention relates to a technique for air-conditioning a space that is an optical path of a laser beam in order to improve the measurement accuracy of a laser interferometer used for aligning an exposed substrate such as a wafer.

例えば、ＩＣ、ＬＳＩなどの半導体素子を製造する際に用いられる露光装置では、解像性能と重ね合わせ性能という２つの基本的性能が要求される。解像性能とは、ウエハ面上に塗布されたフォトレジスト上に如何に微細なパターンを形成できるかという性能である。また、重ね合わせ性能とは、前工程でウエハ面上に形成されたパターンに対して、レチクル上のパターンをいかに正確に位置合わせして転写できるかという性能である。 For example, in an exposure apparatus used for manufacturing semiconductor elements such as ICs and LSIs, two basic performances, resolution performance and superposition performance, are required. The resolution performance is the performance of how a fine pattern can be formed on the photoresist applied on the wafer surface. Further, the superimposition performance is a performance of how accurately the pattern on the reticle can be aligned and transferred with respect to the pattern formed on the wafer surface in the previous process.

近年では、半導体集積回路の高集積化に伴い、超微細パターン形成への要求が強まり、レチクルとウエハの重ね合わせ性能に対する要求がますます厳しくなってきている。このため、走査型露光装置においては、レチクルを載置するレチクルステージだけでなく、ウエハを載置して投影光学系に対して走査するウエハステージにも、ナノオーダーレベルでの位置精度が要求されるようになっている。そこで、ウエハステージの位置計測には、レーザ干渉計が用いられている。 In recent years, with the increasing integration of semiconductor integrated circuits, the demand for ultrafine pattern formation has become stronger, and the demand for the superposition performance of reticle and wafer has become more and more strict. Therefore, in the scanning exposure apparatus, not only the reticle stage on which the reticle is mounted but also the wafer stage on which the wafer is mounted and scanned against the projection optical system are required to have position accuracy at the nano-order level. It has become so. Therefore, a laser interferometer is used to measure the position of the wafer stage.

レーザ干渉計による測長の精度や安定性を高めるためには、レーザ光の光路を構成する物質の屈折率、すなわち測長する光路上の空気の屈折率を変動させないことが重要である。空気の屈折率は、よく知られているように、温度や気圧に依存して変化する。 In order to improve the accuracy and stability of the length measurement by the laser interferometer, it is important not to change the refractive index of the material constituting the optical path of the laser beam, that is, the refractive index of the air on the optical path to be measured. As is well known, the refractive index of air changes depending on temperature and atmospheric pressure.

温度に関しては、ウエハのＸＹ位置決め装置に温度制御用の空調機を付設し、測定光路に向けて温度が調節された空気を吹出すことで、測定光路上の気温の安定化が図られてきた。 Regarding the temperature, an air conditioner for temperature control is attached to the XY positioning device of the wafer, and air whose temperature is adjusted is blown out toward the measurement optical path to stabilize the temperature on the measurement optical path. ..

また、気圧に関しては、例えば特許文献１には、測定光路を同軸状に囲む筒体を設け、筒体の軸方向の長さが伸縮可能に構成された整流構造体が開示されている。 Regarding the atmospheric pressure, for example, Patent Document 1 discloses a rectifying structure in which a tubular body that coaxially surrounds the measurement optical path is provided and the axial length of the tubular body is expandable and contractible.

また、レーザ光路とは直接の関係はないが、フィルタを用いて空気を清浄化する空気清浄装置の分野では、特許文献２のように、送風機の風速が高い領域に開口率の低い整流部材を配置することが開示されている。 Further, although it is not directly related to the laser optical path, in the field of an air purifying device that purifies air by using a filter, a rectifying member having a low aperture ratio is provided in a region where the wind speed of the blower is high, as in Patent Document 2. The placement is disclosed.

特開平８－８２５０９号公報Japanese Unexamined Patent Publication No. 8-82509 特開２００４－１１６９８７号公報Japanese Unexamined Patent Publication No. 2004-116987

特許文献１に開示された方法は、測定光路を同軸状に囲む筒を設けて周囲の気流から光路を隔離し、筒内に層流が流れるようにして光路上に周囲から乱流が吹き付けるのを防止するものであり、理論的には一定の効果が期待できる。しかし、測定光路の両端にはレーザ干渉計と被計測部材が配置されており、層流を流す際に障害物となる上、他の可動部材との干渉防止や整備時の作業性など様々な制約を考慮する必要がある。このため、測定光路を同軸状に囲んで層流を流せる筒体を設置することは、現実的には極めて困難であった。 In the method disclosed in Patent Document 1, a cylinder that coaxially surrounds the measurement optical path is provided to isolate the optical path from the surrounding airflow, and a laminar flow is allowed to flow in the cylinder so that a turbulent flow is blown onto the optical path from the surroundings. In theory, a certain effect can be expected. However, a laser interferometer and a member to be measured are arranged at both ends of the measurement optical path, which becomes an obstacle when flowing a laminar flow, prevents interference with other movable members, and has various workability during maintenance. Constraints need to be considered. For this reason, it has been extremely difficult in reality to install a cylinder that coaxially surrounds the measurement optical path and allows a laminar flow to flow.

そこで、実在する従来の露光装置で生じていた課題を、図８、図９を参照して説明する。図８は、従来の露光装置の内部構造を示す模式図であり、図９は従来のレーザ干渉計の光路の近傍における流速分布（気圧分布）を示す模式図である。 Therefore, the problems that have occurred in the existing conventional exposure apparatus will be described with reference to FIGS. 8 and 9. FIG. 8 is a schematic diagram showing the internal structure of the conventional exposure apparatus, and FIG. 9 is a schematic diagram showing the flow velocity distribution (atmospheric pressure distribution) in the vicinity of the optical path of the conventional laser interferometer.

１はウエハ、２はウエハ１を吸着保持するウエハチャック、３はウエハチャック２を保持するトップテーブルである。４はトップテーブル３をＸ方向に移動するＸステージ、５はＸステージ駆動用モータ、６はトップテーブル３をＹ方向に移動するＹステージ、７はＹステージ駆動用モータ、８はＸＹステージ基盤である。９はＹ方向位置計測用のレーザ干渉計、１０はＹ方向に沿って伝播する計測用のレーザビーム、１１はトップテーブル３の端部に固定されたＹ位置計測用の反射鏡である。１２は投影光学系、１３は投影光学系１２を保持し位置関係を保証する鏡筒定盤、１４はＸＹステージ基盤８と鏡筒定盤１３の間の空間の温度を調整するための空調機である。１５は空調機１４からの空気を干渉計の光路上、およびトップテーブル３上に送風するための整流部材である。尚、投影光学系１２の上部には、レチクル（不図示）がセットされ、さらにその上部には露光用の照明光を照射する照明系（不図示）が配置されている。 1 is a wafer, 2 is a wafer chuck that adsorbs and holds the wafer 1, and 3 is a top table that holds the wafer chuck 2. 4 is an X stage that moves the top table 3 in the X direction, 5 is an X stage drive motor, 6 is a Y stage that moves the top table 3 in the Y direction, 7 is a Y stage drive motor, and 8 is an XY stage board. be. Reference numeral 9 is a laser interferometer for measuring the position in the Y direction, 10 is a laser beam for measuring propagating along the Y direction, and 11 is a reflecting mirror for measuring the Y position fixed to the end of the top table 3. 12 is a projection optical system, 13 is a lens barrel surface plate that holds the projection optical system 12 and guarantees a positional relationship, and 14 is an air conditioner for adjusting the temperature of the space between the XY stage base 8 and the lens barrel surface plate 13. Is. Reference numeral 15 is a rectifying member for blowing air from the air conditioner 14 onto the optical path of the interferometer and onto the top table 3. A reticle (not shown) is set on the upper part of the projection optical system 12, and an illumination system (not shown) for irradiating the illumination light for exposure is arranged on the reticle (not shown).

空調機１４により温度調整された空気をレーザビーム１０の光路に流すには、障害物となるレーザ干渉計９を避けて、図の右から左に向けて空調機１４から流れる気流を、光路に向けて下向きに偏向させる必要がある。そのため、複数の板状部材で構成された整流部材１５が設置され、温度調整された気流をレーザビーム１０の光路に向けて導いていた。
しかしながら、このような従来の方法では、整流部材１５で区分された流路を経由して吹き出す空気の流速が、光路上の場所によって不均一になっていた。 In order to allow the air whose temperature has been adjusted by the air conditioner 14 to flow through the optical path of the laser beam 10, the airflow flowing from the air conditioner 14 from the right to the left in the figure is directed to the optical path, avoiding the laser interferometer 9 which is an obstacle. It needs to be deflected downward. Therefore, the rectifying member 15 composed of a plurality of plate-shaped members is installed, and the temperature-controlled airflow is guided toward the optical path of the laser beam 10.
However, in such a conventional method, the flow velocity of the air blown out through the flow path divided by the rectifying member 15 is non-uniform depending on the location on the optical path.

図９では、気流を模式的に矢印で示すとともに、レーザビーム１０の光路における気流の速度をグラフにして示している。図示のように、空調機から流速の揃った気流が供給されても、整流部材１５の壁１５０１が屈曲している部分に近接すると、流速を示す矢印の長さが場所によって大きく異なってゆくのが判る。そして、レーザビーム１０の光路上における流速は、グラフに示すようにレーザ干渉計９側から位置計測用の反射鏡１１側に向けて増加してゆくが、整流部材１５の壁１５０１を境にして一旦減少し、反射鏡１１側に近づくにつれて再び増加する。 In FIG. 9, the airflow is schematically shown by an arrow, and the velocity of the airflow in the optical path of the laser beam 10 is shown as a graph. As shown in the figure, even if an air conditioner with a uniform flow velocity is supplied, the length of the arrow indicating the flow velocity varies greatly depending on the location when the wall 1501 of the rectifying member 15 is close to the bent portion. I understand. Then, the flow velocity of the laser beam 10 on the optical path increases from the laser interferometer 9 side toward the position measuring reflector 11 side as shown in the graph, but with the wall 1501 of the rectifying member 15 as a boundary. It decreases once and increases again as it approaches the reflector 11 side.

このように、距離測定用のレーザビームの光路上において場所によって空気の流速が異なると、乱流が生じて気圧が一様でなくなり、光路上の場所によって空気の屈折率に差異が生じることになる。
このため、たとえ温度調節した空気を流したとしても、レーザ干渉計の測定精度や安定性が十分に保証されない場合があった。 In this way, if the flow velocity of air differs depending on the location on the optical path of the laser beam for distance measurement, turbulence will occur and the air pressure will not be uniform, and the refractive index of air will differ depending on the location on the optical path. Become.
Therefore, even if the temperature-controlled air is flowed, the measurement accuracy and stability of the laser interferometer may not be sufficiently guaranteed.

本発明の第１の態様は、レーザビームの光路に向けて流れる気流を整流する整流装置であって、矩形の流入口と、前記流入口よりも開口面積が大きな流出口とを結ぶ通風路を複数備え、前記複数の通風路は、前記流入口の開口面積が異なる通風路を含み、前記流入口の開口面積が異なる通風路のうち、前記流入口の開口面積が相対的に小さい通風路が、相対的に大きな流速の気流が流入する位置に配置されている、ことを特徴とする整流装置である。 The first aspect of the present invention is a rectifying device that rectifies the airflow flowing toward the optical path of the laser beam, and provides a ventilation path connecting a rectangular inlet and an outlet having an opening area larger than that of the inlet. The plurality of ventilation passages include ventilation passages having different opening areas of the inlets, and among the ventilation passages having different opening areas of the inlets, the ventilation passages having a relatively small opening area of the inlets are included. It is a rectifying device characterized in that it is arranged at a position where an air flow having a relatively large flow velocity flows in.

本発明によれば、レーザ干渉計の測定精度や安定性を高めることができ、超微細パターンの形成に適した半導体製造装置を提供することができる。 According to the present invention, it is possible to improve the measurement accuracy and stability of the laser interferometer, and to provide a semiconductor manufacturing apparatus suitable for forming an ultrafine pattern.

実施形態１に係る露光装置の内部構造を示す模式図。The schematic diagram which shows the internal structure of the exposure apparatus which concerns on Embodiment 1. FIG. （ａ）実施形態１に係る整流格子の外観斜視図。（ｂ）実施形態１に係る整流格子の模式的な透視図。(A) External perspective view of the rectifying grid according to the first embodiment. (B) Schematic perspective view of the rectifying grid according to the first embodiment. 実施形態１における各部の気流の状況を説明するための図。The figure for demonstrating the state of the air flow of each part in Embodiment 1. FIG. 実施形態２における各部の気流の状況を説明するための図。The figure for demonstrating the state of the air flow of each part in Embodiment 2. 実施形態３における各部の気流の状況を説明するための図。The figure for demonstrating the state of the air flow of each part in Embodiment 3. 実施形態４における各部の気流の状況を説明するための図。The figure for demonstrating the state of the air flow of each part in Embodiment 4. 実施形態に係る整流格子の製造方法を説明するための模式図。The schematic diagram for demonstrating the manufacturing method of the rectifying grid which concerns on embodiment. 従来の露光装置の一部構造を示す模式図。The schematic diagram which shows a part structure of the conventional exposure apparatus. 従来の露光装置のレーザ干渉計の光路上における空気の流速分布を説明するための模式図。The schematic diagram for demonstrating the flow velocity distribution of the air on the optical path of the laser interferometer of the conventional exposure apparatus.

図面を参照して、本発明の実施形態である整流装置、半導体製造装置等について説明する。
尚、以下の実施形態の説明において参照する図面では、特に但し書きがない限り、同一の参照番号を付して示す要素は、同一あるいは類似の機能を有するものとする。 A rectifying device, a semiconductor manufacturing device, and the like, which are embodiments of the present invention, will be described with reference to the drawings.
In the drawings referred to in the description of the following embodiments, unless otherwise specified, the elements indicated by the same reference numbers shall have the same or similar functions.

［実施形態１］
図１は、実施形態１に係る露光装置の内部構造を示す模式図である。図８を参照して説明した従来の露光装置と共通する部分、すなわち、１～１５の参照番号を付して示す部分については、説明を省略する。 [Embodiment 1]
FIG. 1 is a schematic view showing the internal structure of the exposure apparatus according to the first embodiment. The parts common to the conventional exposure apparatus described with reference to FIG. 8, that is, the parts indicated by reference numbers 1 to 15, will be omitted.

本実施形態では、整流部材１５の流路出口の近傍に、特有の構造を有する整流装置として整流格子１６を設け、流速分布（圧力分布）の均一性が高く、温度が制御された気流をレーザビーム１０の光路に供給する。整流装置としての整流格子１６は、溶接、ビス締結、接着などの適宜の手法で整流部材１５に固定されている。 In the present embodiment, a rectifying grid 16 is provided as a rectifying device having a unique structure in the vicinity of the flow path outlet of the rectifying member 15, and the airflow having high uniformity of the flow velocity distribution (pressure distribution) and whose temperature is controlled is lasered. It is supplied to the optical path of the beam 10. The rectifying grid 16 as a rectifying device is fixed to the rectifying member 15 by an appropriate method such as welding, screw fastening, and adhesion.

図２（ａ）は整流格子１６の外観斜視図で、図２（ｂ）は整流格子１６の模式的な透視図である。また、図３は、整流部材１５からレーザビーム１０の光路に至るまでの気流の状況を説明するための図であり、各所に流れる気流を矢印を使って模式的に示し、図の下部には光路上の各所の流速をグラフにして示している。 FIG. 2A is an external perspective view of the rectifying grid 16, and FIG. 2B is a schematic perspective view of the rectifying grid 16. Further, FIG. 3 is a diagram for explaining the state of the air flow from the rectifying member 15 to the optical path of the laser beam 10, and the air flow flowing in various places is schematically shown by arrows, and the lower part of the figure shows the air flow. The flow velocities at various points on the optical path are shown in a graph.

整流格子１６は、開口の形状が実質的には矩形である複数の通風路（管路）を集合した構造体である。図２（ａ）に示すように、各通風路の空気流入口は、圧力損失を抑えるため、製造上の誤差を除き実質的に矩形にするのが望ましい。特に、長辺と短辺のアスペクト比が０．９以上の略正方形にするのが好適である。尚、通風路を区画する壁面の厚さは、後述する蓋部ＳＴを除き、例えば０．６ｍｍ以下とするのが望ましい。 The rectifying grid 16 is a structure in which a plurality of ventilation paths (pipes) having a substantially rectangular opening shape are assembled. As shown in FIG. 2A, it is desirable that the air inlet of each ventilation passage is substantially rectangular in order to suppress pressure loss, excluding manufacturing errors. In particular, it is preferable to make a substantially square having an aspect ratio of 0.9 or more on the long side and the short side. The thickness of the wall surface that divides the ventilation passage is preferably 0.6 mm or less, except for the lid ST, which will be described later.

図２（ｂ）、図３に示すように、複数の通風路の各々は、空気の流入口（投影光学系１２側）から流出口（レーザビーム１０の光路側）に向かって流路断面積が増加してゆくような末広がりの形状を備えている。すなわち、本実施形態の整流格子１６は、矩形の流入口と、流入口よりも開口面積が大きな流出口とを結ぶ通風路を複数備えている。
各通風路について、流出口と流入口を結ぶ各側面の仕切り板どうしがなす角度を流路断面の拡大角度θと定義すれば、整流格子１６に含まれる各通風路の拡大角度θは、大きすぎないことが望ましい。例えば、整流格子１６を構成する複数の通風路の拡大角度θの最大値＜20°であるのが望ましい。
あるいは、各通風路について、（流出口の開口面積）／（流入口の開口面積）を流路断面積の拡大率Ｅと定義すれば、整流格子１６に含まれる各通風路の拡大率Ｅは、ばらつかないのが望ましい。例えば、整流格子１６を構成する複数の通風路の拡大率Ｅの最大値と最小値の比は、（最大値／最小値）＜２であるのが望ましい。 As shown in FIGS. 2B and 3, each of the plurality of ventilation paths has a cross-sectional area of the flow path from the air inlet (projection optical system 12 side) toward the outlet (optical path side of the laser beam 10). It has a shape that spreads toward the end as it increases. That is, the rectifying grid 16 of the present embodiment includes a plurality of ventilation passages connecting a rectangular inlet and an outlet having an opening area larger than that of the inlet.
For each ventilation passage, if the angle formed by the partition plates on each side surface connecting the outlet and the inlet is defined as the expansion angle θ of the flow path cross section, the expansion angle θ of each ventilation passage included in the rectifying grid 16 is large. It is desirable not to be too much. For example, it is desirable that the maximum value <20 ° of the expansion angle θ of the plurality of ventilation passages constituting the rectifying grid 16.
Alternatively, if (opening area of the outlet) / (opening area of the inflow port) is defined as the expansion ratio E of the cross-sectional area of the flow path for each ventilation passage, the expansion ratio E of each ventilation passage included in the rectifying grid 16 is It is desirable that it does not vary. For example, it is desirable that the ratio of the maximum value and the minimum value of the enlargement ratio E of the plurality of ventilation passages constituting the rectifying grid 16 is (maximum value / minimum value) <2.

また、図２（ａ）に示すように、整流格子１６に含まれる複数の通風路の中には、空気流入口の開口面積が異なるものが存在する。言い換えれば、各通風路の空気流入口は、整流部材１５の流路出口における空気の流速分布に応じて開口面積が異なるように設定されている。 Further, as shown in FIG. 2A, some of the plurality of ventilation passages included in the rectifying grid 16 have different opening areas of the air inlets. In other words, the air inlet of each ventilation path is set so that the opening area differs depending on the flow velocity distribution of the air at the flow velocity distribution of the rectifying member 15.

図３に示すように、壁１５０１で区分された整流部材１５の各流路の入り口（図中右側）には、温度調節された空気流が空調機からほぼ一様な流速で流れ込むが、流路の屈曲部を経ると、気流の速度（方向および速さ）は場所により異なるものとなる。屈曲部を通過する際に、カーブの外側（曲率半径大）では流速は相対的に大きくなり、内側（曲率半径小）では流速は相対的に小さくなる。このため、整流部材１５で区画された各流路の出口付近において、反射鏡１１側では気流は高速に流れ、レーザ干渉計９側では淀んで低速になる。 As shown in FIG. 3, a temperature-controlled air flow flows from the air conditioner at a substantially uniform flow velocity to the entrance (right side in the figure) of each flow path of the rectifying member 15 divided by the wall 1501. After passing through the bends of the road, the velocities (directions and speeds) of the airflow will vary from place to place. When passing through the bent portion, the flow velocity is relatively large on the outside of the curve (large radius of curvature) and relatively small on the inside (small radius of curvature). Therefore, in the vicinity of the outlet of each flow path partitioned by the rectifying member 15, the airflow flows at high speed on the reflector 11 side, and stagnates and slows down on the laser interferometer 9 side.

本実施形態の整流格子１６では、整流部材１５で区画された各流路の出口において、流速が速い場所ほど、相対的に開口面積が小さな通風路が配置されている。すなわち、反射鏡１１側には開口面積が小さな通風路１７が配置され、レーザ干渉計９側には開口面積が大きな通風路１８が配置される。さらに、本実施形態では、整流部材１５で区画された各流路の出口において流速が所定値以下の場所、すなわちレーザ干渉計９側の所定範囲には、通風路を配置せずに蓋部ＳＴを設ける。 In the rectifying grid 16 of the present embodiment, at the outlet of each flow path partitioned by the rectifying member 15, a ventilation path having a relatively small opening area is arranged at a place where the flow velocity is higher. That is, a ventilation passage 17 having a small opening area is arranged on the reflector 11 side, and a ventilation passage 18 having a large opening area is arranged on the laser interferometer 9 side. Further, in the present embodiment, the lid ST is not provided with a ventilation path in a place where the flow velocity is equal to or less than a predetermined value at the outlet of each flow path partitioned by the rectifying member 15, that is, in a predetermined range on the laser interferometer 9 side. Is provided.

開口面積が小さな通風路であるほど、すなわち流路断面積が小さな通風路であるほど、流路抵抗が大きくなるため、そこを流れる気流の減速度は大きくなる。このため、本実施形態の整流格子１６を通過する気流は、各通風路の入口よりも出口において速さのばらつきが小さくなる。また、各通風路に末広がりの形状をもたせることにより、蓋部ＳＴを設けていても、レーザビーム１０の光路に沿って（Ｙ方向に連続して）通風路の流出口を途切れることなく隣接して配置することができる。 The smaller the opening area, that is, the smaller the cross-sectional area of the flow path, the larger the flow path resistance, and the larger the deceleration of the air flow flowing there. Therefore, the airflow passing through the rectifying grid 16 of the present embodiment has a smaller variation in speed at the outlet than at the inlet of each ventilation path. Further, by giving each ventilation path a divergent shape, even if the lid ST is provided, the outlets of the ventilation passages are adjacent to each other along the optical path of the laser beam 10 (continuously in the Y direction) without interruption. Can be placed.

このため、図３の下部に示すグラフのように、速さの均一性が高い気流を、レーザビーム１０の光路に安定して供給することができる。言い換えれば、レーザビーム１０の光路における気圧の乱れを抑制することができ、光路上の屈折率の変動を抑制することが可能である。
本実施形態によれば、レーザ干渉計の測定精度や安定性を高めることができ、超微細パターンの形成に適した半導体製造装置を提供することができる。 Therefore, as shown in the graph at the bottom of FIG. 3, an air flow having a high uniformity of speed can be stably supplied to the optical path of the laser beam 10. In other words, it is possible to suppress the disturbance of the atmospheric pressure in the optical path of the laser beam 10, and it is possible to suppress the fluctuation of the refractive index on the optical path.
According to this embodiment, it is possible to improve the measurement accuracy and stability of the laser interferometer, and it is possible to provide a semiconductor manufacturing apparatus suitable for forming an ultrafine pattern.

［実施形態２］
本発明の実施形態２について説明するが、実施形態１と共通する説明については記載を簡略化する。本実施形態の露光装置も、図１に示した実施形態１に係る露光装置と概略同様の内部構造を備えている。ただし、本実施形態の露光装置は、実施形態１の整流格子１６に代えて、図４に示す整流格子１９を整流装置として備えている。 [Embodiment 2]
The second embodiment of the present invention will be described, but the description common to the first embodiment will be simplified. The exposure apparatus of this embodiment also has an internal structure substantially similar to that of the exposure apparatus according to the first embodiment shown in FIG. However, the exposure apparatus of the present embodiment includes the rectifying grid 19 shown in FIG. 4 as the rectifying grid instead of the rectifying grid 16 of the first embodiment.

図４は、整流部材１５からレーザビーム１０の光路に至るまでの気流の状況を説明するための図であり、各所に流れる空気流を矢印を使って模式的に示し、図の下部には光路上の各所の流速をグラフにして示している。 FIG. 4 is a diagram for explaining the state of the air flow from the rectifying member 15 to the optical path of the laser beam 10. The air flow flowing through each place is schematically shown by arrows, and the light is shown at the bottom of the figure. The flow velocities at various points on the road are shown in a graph.

本実施形態の整流格子１９も、図２（ａ）に示すような外観を備えるが、各通風路の空気流入口の形状は、圧力損失を抑えるため、製造上の誤差を除き実質的に矩形にするのが望ましい。特に、長辺と短辺のアスペクト比が０．９以上の略正方形にするのが好適である。通風路の各々が、空気の流入口（投影光学系側）から流出口（レーザビーム１０の光路側）に向かって流路断面積が増加してゆくような末広がりの形状を備えている点で、実施形態１の整流格子１６と共通している。 The rectifying grid 19 of the present embodiment also has the appearance as shown in FIG. 2A, but the shape of the air inlet of each ventilation path is substantially rectangular except for manufacturing errors in order to suppress pressure loss. It is desirable to set it to. In particular, it is preferable to make a substantially square having an aspect ratio of 0.9 or more on the long side and the short side. Each of the ventilation paths has a divergent shape in which the cross-sectional area of the flow path increases from the air inlet (projection optical system side) to the outlet (optical path side of the laser beam 10). , Which is common to the rectifying grid 16 of the first embodiment.

ただし、本実施形態の整流格子１９では、通風路２０を位置計測用の反射鏡１１に向けて傾斜させ、通風路２０の流出口を壁１５０１よりも反射鏡１１側にオフセットさせている点が実施形態１の整流格子１６と異なる。壁１５０１で区分された整流部材１５の各流路に温度調節器から流し込まれる空気流の流速や、屈曲部の形状によっては、実施形態１よりも本実施形態の整流格子の方が、レーザビーム１０の光路上の気圧の乱れを抑制する効果が更に優れている場合がある。 However, in the rectifying grid 19 of the present embodiment, the ventilation passage 20 is tilted toward the reflector 11 for position measurement, and the outlet of the ventilation passage 20 is offset toward the reflector 11 with respect to the wall 1501. It is different from the rectifying grid 16 of the first embodiment. Depending on the flow velocity of the air flow flowing from the temperature controller into each flow path of the rectifying member 15 divided by the wall 1501 and the shape of the bent portion, the laser beam of the rectifying grid of the present embodiment is higher than that of the first embodiment. The effect of suppressing the disturbance of the air pressure on the optical path of 10 may be further excellent.

すなわち、図４の下部に示すグラフのように、速さの均一性が高い気流を安定してレーザビーム１０の光路に供給することができ、光路上の屈折率の変動を抑制することが可能である。
本実施形態によれば、レーザ干渉計の測定精度や安定性を高めることができ、超微細パターンの形成に適した半導体製造装置を提供することができる。 That is, as shown in the graph at the bottom of FIG. 4, it is possible to stably supply an air flow having a high degree of uniformity to the optical path of the laser beam 10, and it is possible to suppress fluctuations in the refractive index on the optical path. Is.
According to this embodiment, it is possible to improve the measurement accuracy and stability of the laser interferometer, and it is possible to provide a semiconductor manufacturing apparatus suitable for forming an ultrafine pattern.

［実施形態３］
本発明の実施形態３について説明するが、実施形態１と共通する説明については記載を簡略化する。本実施形態の露光装置も、図１に示した実施形態１に係る露光装置と概略同様の内部構造を備えている。ただし、本実施形態の露光装置は、実施形態１の整流格子１６に代えて、図５に示す整流格子２１を整流装置として備えている。 [Embodiment 3]
The third embodiment of the present invention will be described, but the description common to the first embodiment will be simplified. The exposure apparatus of this embodiment also has an internal structure substantially similar to that of the exposure apparatus according to the first embodiment shown in FIG. However, the exposure apparatus of the present embodiment includes the rectifying grid 21 shown in FIG. 5 as the rectifying grid instead of the rectifying grid 16 of the first embodiment.

図５は、整流部材１５からレーザビーム１０の光路に至るまでの気流の状況を説明するための図であり、各所に流れる空気流を矢印を使って模式的に示し、図の下部には光路上の各所の流速をグラフにして示している。 FIG. 5 is a diagram for explaining the state of the air flow from the rectifying member 15 to the optical path of the laser beam 10. The air flow flowing through each place is schematically shown by arrows, and the light is shown at the bottom of the figure. The flow velocities at various points on the road are shown in a graph.

本実施形態の整流格子２１も、図２（ａ）に示すような外観を備えるが、各通風路の空気流入口の形状は、圧力損失を抑えるため、製造上の誤差を除き実質的に矩形にするのが望ましい。特に、長辺と短辺のアスペクト比が０．９以上の略正方形にするのが好適である。
通風路の各々は、空気の流入口（投影光学系側）から流出口（レーザビーム１０の光路側）に向かって、途中まで流路断面積が増加してゆくような末広がりの形状を備えている。 The rectifying grid 21 of the present embodiment also has the appearance as shown in FIG. 2A, but the shape of the air inlet of each ventilation path is substantially rectangular except for manufacturing errors in order to suppress pressure loss. It is desirable to set it to. In particular, it is preferable to make a substantially square having an aspect ratio of 0.9 or more on the long side and the short side.
Each of the ventilation paths has a divergent shape in which the cross-sectional area of the flow path increases halfway from the air inlet (projection optical system side) to the outlet (optical path side of the laser beam 10). There is.

ただし、本実施形態の整流格子２１では、各通風路の流出口の近傍において、各通風路を区画する壁２２を屈曲させ、全ての通風路の管路がＺ軸と平行となるように流出口側の流路の向きを設定している。これにより、整流格子２１からレーザビーム１０の光路に向けて各通風路から吹き出される気流の速さだけでなく方向も揃えることが可能になり、気流同士の干渉による乱流が発生しにくくなる。 However, in the rectifying grid 21 of the present embodiment, in the vicinity of the outlet of each ventilation passage, the wall 22 that partitions each ventilation passage is bent so that the pipelines of all the ventilation passages are parallel to the Z axis. The direction of the flow path on the exit side is set. This makes it possible to align not only the speed but also the direction of the airflow blown from each ventilation path from the rectifying grid 21 toward the optical path of the laser beam 10, and turbulence due to interference between the airflows is less likely to occur. ..

通風路を途中で屈曲させると流出口における流速は低下するが、温度調節器から整流部材１５に流し込まれる流速によっては、実施形態１よりも本実施形態の方が、レーザビーム１０の光路上の気圧の乱れを抑制する効果が更に優れている場合がある。 If the ventilation path is bent in the middle, the flow velocity at the outlet decreases, but depending on the flow velocity flowing from the temperature controller into the rectifying member 15, the present embodiment is more on the optical path of the laser beam 10 than the first embodiment. The effect of suppressing the disturbance of the atmospheric pressure may be further excellent.

すなわち、図５の下部に示すグラフのように、速さの均一性が高い気流を安定してレーザビーム１０の光路に供給することができ、光路上における屈折率の変動を抑制することが可能である。
本実施形態によれば、レーザ干渉計の測定精度や安定性を高めることができ、超微細パターンの形成に適した半導体製造装置を提供することができる。 That is, as shown in the graph at the bottom of FIG. 5, it is possible to stably supply an air flow having a high degree of uniformity to the optical path of the laser beam 10, and it is possible to suppress fluctuations in the refractive index on the optical path. Is.
According to this embodiment, it is possible to improve the measurement accuracy and stability of the laser interferometer, and it is possible to provide a semiconductor manufacturing apparatus suitable for forming an ultrafine pattern.

［実施形態４］
本発明の実施形態４について説明するが、実施形態１と共通する説明については記載を簡略化する。本実施形態の露光装置も、図１に示した実施形態１に係る露光装置と概略同様の内部構造を備えている。ただし、本実施形態の露光装置は、実施形態１の整流格子１６に代えて、図６に示す整流格子２３を整流装置として備えている。 [Embodiment 4]
The fourth embodiment of the present invention will be described, but the description common to the first embodiment will be simplified. The exposure apparatus of this embodiment also has an internal structure substantially similar to that of the exposure apparatus according to the first embodiment shown in FIG. However, the exposure apparatus of the present embodiment includes the rectifying grid 23 shown in FIG. 6 as the rectifying grid instead of the rectifying grid 16 of the first embodiment.

図６は、整流部材１５からレーザビーム１０の光路に至るまでの気流の状況を説明するための図であり、各所に流れる空気流を矢印を使って模式的に示し、図の下部には光路上の各所の流速をグラフにして示している。 FIG. 6 is a diagram for explaining the state of the air flow from the rectifying member 15 to the optical path of the laser beam 10, and the air flow flowing through each place is schematically shown by using arrows, and the light is shown at the bottom of the figure. The flow velocities at various points on the road are shown in a graph.

本実施形態の整流格子２３も、図２（ａ）に示すような外観を備えるが、各通風路の空気流入口の形状は、圧力損失を抑えるため、製造上の誤差を除き実質的に矩形にするのが望ましい。特に、長辺と短辺のアスペクト比が０．９以上の略正方形にするのが好適である。通風路の各々は、空気の流入口（投影光学系側）から流出口（レーザビーム１０の光路側）に向かって流路断面積が増加してゆくような末広がりの形状を備えている点で、実施形態１の整流格子１６と共通している。 The rectifying grid 23 of the present embodiment also has the appearance as shown in FIG. 2A, but the shape of the air inlet of each ventilation path is substantially rectangular except for manufacturing errors in order to suppress pressure loss. It is desirable to set it to. In particular, it is preferable to make a substantially square having an aspect ratio of 0.9 or more on the long side and the short side. Each of the ventilation paths has a divergent shape in which the cross-sectional area of the flow path increases from the air inlet (projection optical system side) to the outlet (optical path side of the laser beam 10). , Which is common to the rectifying grid 16 of the first embodiment.

ただし、本実施形態の整流格子２３では、各通風路内に、所謂ヴォルテックスジェネレータと呼ばれる渦流生成器２４（突起）を設けている点が、実施形態１の整流格子１６と異なる。渦流生成器２４（突起）を設けることにより、各通風路内における境界層剥離を抑制して実効的な空気抵抗を減らし、レーザビーム１０の光路に向けて吹き出す風速を高めている。温度調節器から整流部材１５に流し込まれる流速によっては、実施形態１よりも本実施形態の方が、レーザビーム１０の光路上の気圧の乱れを抑制する効果が更に優れている場合がある。 However, the rectifying grid 23 of the present embodiment is different from the rectifying grid 16 of the first embodiment in that a vortex generator 24 (projection) called a so-called vortex generator is provided in each ventilation path. By providing the vortex generator 24 (projection), the separation of the boundary layer in each ventilation path is suppressed, the effective air resistance is reduced, and the wind speed blown toward the optical path of the laser beam 10 is increased. Depending on the flow velocity flowing from the temperature controller into the rectifying member 15, the present embodiment may have a better effect of suppressing the disturbance of the atmospheric pressure on the optical path of the laser beam 10 than the first embodiment.

すなわち、図６の下部に示すグラフのように、速さの均一性が高い気流を安定してレーザビーム１０の光路に供給することができ、光路上における屈折率の変動を抑制することが可能である。
本実施形態によれば、レーザ干渉計の測定精度や安定性を高めることができ、超微細パターンの形成に適した半導体製造装置を提供することができる。 That is, as shown in the graph at the bottom of FIG. 6, it is possible to stably supply an air flow having a high degree of uniformity to the optical path of the laser beam 10, and it is possible to suppress fluctuations in the refractive index on the optical path. Is.
According to this embodiment, it is possible to improve the measurement accuracy and stability of the laser interferometer, and it is possible to provide a semiconductor manufacturing apparatus suitable for forming an ultrafine pattern.

［整流格子の製造方法］
上述した実施形態の整流格子は、断面形状が矩形の管路や蓋部を備え、さらには突起部を備える場合もあるが、いずれも各種の製造方法によって製作することができる。例えば、射出成形や鋳造などの手法によって製造することができる。また、機械加工や放電加工などにより母材を切削して製造することもできる。さらには多数の板や突起物を溶接、接着、もしくはビス等で締結することにより製造することもできる。 [Manufacturing method of rectifying grid]
The rectifying grid of the above-described embodiment is provided with a pipeline having a rectangular cross-sectional shape, a lid portion, and may be provided with a protrusion portion, but any of them can be manufactured by various manufacturing methods. For example, it can be manufactured by a method such as injection molding or casting. It can also be manufactured by cutting the base metal by machining or electric discharge machining. Further, it can be manufactured by welding, adhering, or fastening a large number of plates and protrusions with screws or the like.

また、図７に模式的に示すように、整流格子の形状データを３Ｄプリントデータ１０２として準備し、３Ｄプリンタ１０１を用いて整流格子１６を製造することも可能である。３Ｄプリンタ１０１としては、熱溶融積層造形法、光硬化性樹脂を用いた光造形法、粉末焼結法、等のさまざまな方式の装置を用いることが可能である。 Further, as schematically shown in FIG. 7, it is also possible to prepare the shape data of the rectifying grid as 3D print data 102 and manufacture the rectifying grid 16 using the 3D printer 101. As the 3D printer 101, various types of devices such as a hot melt lamination modeling method, a stereolithography method using a photocurable resin, and a powder sintering method can be used.

［他の実施形態］
なお、本発明は、以上説明した実施形態に限定されるものではなく、本発明の技術的思想内で多くの変形が可能である。
例えば、実施形態４で説明した渦流生成器は、実施形態２や実施形態３で説明した整流格子の通風路内に設けてもよい。 [Other embodiments]
The present invention is not limited to the embodiments described above, and many modifications can be made within the technical idea of the present invention.
For example, the vortex generator described in the fourth embodiment may be provided in the ventilation path of the rectifying grid described in the second embodiment and the third embodiment.

また、実施形態の整流格子を備えた露光装置を用いて、レーザ干渉計により高精度にウエハステージの位置計測を行いながら位置合わせをして、ウエハ上のレジストにレジストのパターンを露光して半導体を製造することも、本発明の実施に含まれる。 Further, using the exposure apparatus provided with the rectifying grid of the embodiment, alignment is performed while measuring the position of the wafer stage with high accuracy by a laser interferometer, and the resist pattern is exposed on the resist on the wafer to expose the semiconductor. Is also included in the practice of the present invention.

また、実施形態の整流装置は、フォトリソグラフィ方式用の露光装置に限らず、他の装置が備えるレーザ干渉計に付帯して設けてもよい。例えば、実施形態の整流装置をナノインプリント方式の半導体製造装置が備えるレーザ干渉計に付帯して設けて、半導体を製造してもよい。 Further, the rectifying device of the embodiment is not limited to the exposure device for the photolithography method, and may be provided incidentally to the laser interferometer provided in other devices. For example, the rectifying device of the embodiment may be attached to the laser interferometer included in the nanoimprint type semiconductor manufacturing device to manufacture the semiconductor.

１・・・ウエハ／２・・・ウエハチャック／３・・・トップテーブル／４・・・Ｘステージ／５・・・Ｘステージ駆動用モータ／６・・・Ｙステージ／７・・・Ｙステージ駆動用モータ／８・・・ＸＹステージ基盤／９・・・レーザ干渉計／１０・・・レーザビーム／１１・・・反射鏡／１２・・・投影光学系／１３・・・鏡筒定盤／１４・・・空調機／１５・・・整流部材／１６・・・整流格子／１７、１８・・・通風路／１９・・・整流格子／２０・・・通風路／２１・・・整流格子／２２・・・壁／２３・・・整流格子／２４・・・渦流生成器／１５０１・・・壁／ＳＴ・・・蓋部 1 ... Wafer / 2 ... Wafer chuck / 3 ... Top table / 4 ... X stage / 5 ... X stage drive motor / 6 ... Y stage / 7 ... Y stage Drive motor / 8 ... XY stage board / 9 ... Laser interferometer / 10 ... Laser beam / 11 ... Reflector / 12 ... Projection optical system / 13 ... Lens barrel platen / 14 ... air conditioner / 15 ... rectifying member / 16 ... rectifying grid / 17, 18 ... ventilation path / 19 ... rectifying grid / 20 ... ventilation path / 21 ... rectifying Lattice / 22 ... Wall / 23 ... Rectifier grid / 24 ... Vortex generator / 1501 ... Wall / ST ... Lid

Claims (9)

レーザビームの光路に向けて流れる気流を整流する整流装置であって、
矩形の流入口と、前記流入口よりも開口面積が大きな流出口とを結ぶ通風路を複数備え、
前記複数の通風路は、前記流入口の開口面積が異なる通風路を含み、
前記流入口の開口面積が異なる通風路のうち、前記流入口の開口面積が相対的に小さい通風路が、相対的に大きな流速の気流が流入する位置に配置されている、
ことを特徴とする整流装置。 A rectifier that rectifies the airflow that flows toward the optical path of the laser beam.
A plurality of ventilation passages connecting a rectangular inlet and an outlet having a larger opening area than the inlet are provided.
The plurality of ventilation passages include ventilation passages having different opening areas of the inflow port.
Among the ventilation passages having different opening areas of the inlet, the ventilation passage having a relatively small opening area of the inlet is arranged at a position where an air flow having a relatively large flow velocity flows in.
A rectifier that features that. 前記矩形の流入口の長辺と短辺のアスペクト比が０．９以上である、
ことを特徴とする請求項１に記載の整流装置。 The aspect ratio of the long side and the short side of the rectangular inlet is 0.9 or more.
The rectifying device according to claim 1. 前記複数の通風路の各々は、前記流入口から前記流出口に向けて流路の断面積が拡大している、
ことを特徴とする請求項１または２に記載の整流装置。 Each of the plurality of ventilation passages has an enlarged cross-sectional area of the flow path from the inlet to the outlet.
The rectifying device according to claim 1 or 2. 前記複数の通風路の各々の流出口から吹き出される気流の向きが揃うように、各通風路の流出口側の流路の向きが設定されている、
ことを特徴とする請求項１乃至３のいずれか１項に記載の整流装置。 The direction of the flow path on the outlet side of each vent is set so that the directions of the airflow blown out from each outlet of the plurality of draft passages are the same.
The rectifying device according to any one of claims 1 to 3, wherein the rectifying device is characterized by the above. 前記通風路には、渦流生成器が設けられている、
ことを特徴とする請求項１乃至４のいずれか１項に記載の整流装置。 A vortex generator is provided in the ventilation path.
The rectifying device according to any one of claims 1 to 4, wherein the rectifying device is characterized by the above. 請求項１乃至５のいずれか１項に記載の整流装置を、
３Ｄプリンタを用いて製造する、
ことを特徴とする整流装置の製造方法。 The rectifying device according to any one of claims 1 to 5.
Manufactured using a 3D printer,
A method of manufacturing a rectifier, characterized in that. 請求項１乃至５のいずれか１項に記載の整流装置が、
レーザ干渉計に付帯して設けられている、
ことを特徴とする半導体製造装置。 The rectifying device according to any one of claims 1 to 5
Attached to the laser interferometer,
A semiconductor manufacturing device characterized by this. 前記レーザ干渉計が、ウエハを載置するウエハステージの位置計測に用いられる、
ことを特徴とする請求項７に記載の半導体製造装置。 The laser interferometer is used to measure the position of the wafer stage on which the wafer is placed.
The semiconductor manufacturing apparatus according to claim 7. 請求項７に記載の半導体製造装置を用いて、
前記整流装置により前記レーザ干渉計のレーザビームの光路に気流を流しながら、前記レーザ干渉計によりウエハステージの位置計測を行う、
ことを特徴とする半導体の製造方法。
Using the semiconductor manufacturing apparatus according to claim 7,
The position of the wafer stage is measured by the laser interferometer while flowing an air flow through the optical path of the laser beam of the laser interferometer by the rectifier.
A method for manufacturing a semiconductor, which is characterized in that.
JP2020133339A 2020-08-05 2020-08-05 Rectifier, production method of rectifier, semiconductor production device and semiconductor production method Pending JP2022029819A (en)

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