JP2021532271A - 半導体基板処理におけるペデスタルへの蒸着の防止 - Google Patents
半導体基板処理におけるペデスタルへの蒸着の防止 Download PDFInfo
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Abstract
Description
本願は、2018年7月31日出願の米国仮出願第62/712,436号、および、2019年4月12日出願の米国仮出願第62/832,952号に基づく利益を主張する。上記の出願の開示全体が、参照によって本明細書に組み込まれる。
Claims (21)
- 基板処理システム内の基板支持体のための熱遮蔽構造であって、
前記基板支持体のステムを取り囲むよう構成された外側遮蔽体であって、前記外側遮蔽体は、さらに、(i)前記外側遮蔽体と前記基板支持体の前記ステムとの間、および、(ii)前記外側遮蔽体と前記基板支持体の下面との間に、内部空間を規定するよう構成されている、外側遮蔽体と、
前記外側遮蔽体と前記基板支持体の前記下面との間の前記内部空間内で前記基板支持体の下に配置されるよう構成された少なくとも1つの熱遮蔽プレートと、
前記外側遮蔽体から上向きに伸びるエッジガードであって、前記エッジガードは、(i)前記基板支持体の外周を取り囲み、(ii)前記エッジガードと前記基板支持体との間にギャップを規定するよう構成されている、エッジガードと、
を備える、熱遮蔽構造。 - 請求項1に記載の熱遮蔽構造であって、前記少なくとも1つの熱遮蔽プレートは、前記外側遮蔽体と前記基板支持体の前記下面との間の前記内部空間内で離間して配置された複数の熱遮蔽プレートを含む、熱遮蔽構造。
- 請求項2に記載の熱遮蔽構造であって、さらに、前記熱遮蔽プレートの隣接するプレートの間に配置された複数の断熱ピンを備える、熱遮蔽構造。
- 請求項1に記載の熱遮蔽構造であって、さらに、前記外側遮蔽体と前記ステムとの間に配置された内側遮蔽体を備える、熱遮蔽構造。
- 請求項4に記載の熱遮蔽構造であって、前記内側遮蔽体は、前記少なくとも1つの熱遮蔽プレートから下向きに伸びており、前記内側遮蔽体と前記ステムとの間に第2内部空間を規定している、熱遮蔽構造。
- 請求項1に記載の熱遮蔽構造であって、前記外側遮蔽体は、前記基板支持体の前記ステムとも前記下面とも直接的に接触していない、熱遮蔽構造。
- 請求項1に記載の熱遮蔽構造プレートであって、前記熱遮蔽プレートは、前記基板支持体の前記下面とも前記基板支持体の前記ステムとも前記外側遮蔽体とも直接的に接触していない、熱遮蔽構造。
- 基板支持体であって、請求項1に記載の前記熱遮蔽構造を備え、前記基板支持体は、化学蒸着および原子層蒸着の少なくとも一方の間に基板を支持するよう構成されたペデスタルに対応する、基板支持体。
- システムであって、請求項1に記載の前記熱遮蔽構造を備え、前記システムは、さらに、前記内部空間内にパージガスを流すよう構成されたガス源を備える、システム。
- 基板処理システム内の基板支持体のための熱遮蔽構造であって、
前記基板支持体のステムを取り囲むよう構成された外側遮蔽体であって、前記外側遮蔽体は、さらに、(i)前記外側遮蔽体と前記ステムの上側部分および前記基板支持体の下面との間の内部空間、ならびに、(ii)前記外側遮蔽体と前記基板支持体の前記ステムの下側部分との間の垂直流路、を規定するよう構成されている、外側遮蔽体を備え、
前記外側遮蔽体は、
円筒部分と、
前記円筒部分から半径方向外向きに伸びる第1側方部分と、
前記第1側方部分から半径方向外向きかつ上向きに伸びる傾斜部分と、
前記傾斜部分から半径方向外向きに伸びる第2側方部分と、
を備える、熱遮蔽構造。 - 請求項10に記載の熱遮蔽構造であって、さらに、前記外側遮蔽体の前記第2側方部分から上向きに伸びるエッジガードであって、前記エッジガードは、(i)前記基板支持体の外周を取り囲み、(ii)前記エッジガードと前記基板支持体との間にギャップを規定するよう構成されている、エッジガードを備える、熱遮蔽構造。
- 請求項10に記載の熱遮蔽構造であって、前記垂直流路は、環状である、熱遮蔽構造。
- 請求項10に記載の熱遮蔽構造であって、前記第1側方部分の長さは、前記基板支持体の前記ステムと前記基板支持体の前記外周との間の距離の50%〜70%である、熱遮蔽構造。
- 請求項10に記載の熱遮蔽構造であって、前記第2側方部分の長さは、前記基板支持体の前記ステムと前記基板支持体の前記外周との間の距離の10%以上25%未満である、熱遮蔽構造。
- 請求項10に記載の熱遮蔽構造であって、前記第1側方部分に対する前記傾斜部分の角度は、95〜135度である、熱遮蔽構造。
- 請求項10に記載の熱遮蔽構造であって、前記第2側方部分は、前記第2側方部分と前記基板支持体の前記下面との間に側方流路を規定している、熱遮蔽構造。
- 請求項16に記載の熱遮蔽構造であって、前記側方流路の幅は、1〜10mmである、熱遮蔽構造。
- 請求項11に記載の熱遮蔽構造であって、前記ギャップの幅は、1〜10mmである、熱遮蔽構造。
- 請求項10に記載の熱遮蔽構造であって、前記外側遮蔽体は、前記基板支持体の前記ステムとも前記下面とも直接的に接触していない、熱遮蔽構造。
- 基板支持体であって、請求項10に記載の前記熱遮蔽構造を備え、前記基板支持体は、化学蒸着および原子層蒸着の少なくとも一方の間に基板を支持するよう構成されたペデスタルに対応する、基板支持体。
- システムであって、請求項10に記載の前記熱遮蔽構造を備え、前記システムは、さらに、前記垂直流路を通して前記内部空間内にパージガスを流すよう構成されたガス源を備える、システム。
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US201862712436P | 2018-07-31 | 2018-07-31 | |
US62/712,436 | 2018-07-31 | ||
US201962832952P | 2019-04-12 | 2019-04-12 | |
US62/832,952 | 2019-04-12 | ||
PCT/US2019/043464 WO2020028145A1 (en) | 2018-07-31 | 2019-07-25 | Preventing deposition on pedestal in semiconductor substrate processing |
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JP2024020735A Pending JP2024056884A (ja) | 2018-07-31 | 2024-02-15 | 半導体基板処理におけるペデスタルへの蒸着の防止 |
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JP (2) | JP7440488B2 (ja) |
KR (1) | KR20210029828A (ja) |
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US12020957B2 (en) * | 2020-08-31 | 2024-06-25 | Applied Materials, Inc. | Heater assembly with process gap control for batch processing chambers |
WO2024073447A1 (en) * | 2022-09-30 | 2024-04-04 | Lam Research Corporation | Pedestal with axially symmetric edge purge plenum |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1136076A (ja) * | 1997-07-16 | 1999-02-09 | Tokyo Electron Ltd | Cvd成膜装置およびcvd成膜方法 |
US6001183A (en) * | 1996-06-10 | 1999-12-14 | Emcore Corporation | Wafer carriers for epitaxial growth processes |
JP2003100644A (ja) * | 2001-09-27 | 2003-04-04 | Hitachi Ltd | 半導体製造装置 |
JP2004119786A (ja) * | 2002-09-27 | 2004-04-15 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
JP2004214316A (ja) * | 2002-12-27 | 2004-07-29 | Ulvac Japan Ltd | 熱板表面のカバー機構及びこの機構を備えた処理装置 |
JP2009076598A (ja) * | 2007-09-19 | 2009-04-09 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
JP2010116606A (ja) * | 2008-11-13 | 2010-05-27 | Sharp Corp | 気相成長装置及びガス供給方法 |
US20100317197A1 (en) * | 2009-06-10 | 2010-12-16 | Novellus Systems, Inc. | Heat Shield for Heater in Semiconductor Processing Apparatus |
JP2013138164A (ja) * | 2011-12-01 | 2013-07-11 | Stanley Electric Co Ltd | 半導体製造装置 |
US20150376780A1 (en) * | 2014-06-27 | 2015-12-31 | Applied Materials, Inc. | Plasma corrosion resistive heater for high temperature processing |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5556476A (en) * | 1994-02-23 | 1996-09-17 | Applied Materials, Inc. | Controlling edge deposition on semiconductor substrates |
JP3763016B2 (ja) * | 2002-02-08 | 2006-04-05 | 日立造船株式会社 | 基板処理装置 |
JP5135915B2 (ja) * | 2007-06-28 | 2013-02-06 | 東京エレクトロン株式会社 | 載置台構造及び熱処理装置 |
JP4913695B2 (ja) * | 2007-09-20 | 2012-04-11 | 東京エレクトロン株式会社 | 基板処理装置及びそれに用いる基板載置台 |
JP5833429B2 (ja) * | 2011-12-20 | 2015-12-16 | スタンレー電気株式会社 | 半導体製造装置 |
WO2017165016A1 (en) * | 2016-03-25 | 2017-09-28 | Applied Materials, Inc. | Chamber liner for high temperature processing |
-
2019
- 2019-07-25 KR KR1020217006258A patent/KR20210029828A/ko not_active Application Discontinuation
- 2019-07-25 CN CN201980051139.XA patent/CN112534558A/zh active Pending
- 2019-07-25 US US17/262,855 patent/US11725285B2/en active Active
- 2019-07-25 JP JP2021505403A patent/JP7440488B2/ja active Active
- 2019-07-25 WO PCT/US2019/043464 patent/WO2020028145A1/en active Application Filing
- 2019-07-29 TW TW108126718A patent/TWI823977B/zh active
-
2024
- 2024-02-15 JP JP2024020735A patent/JP2024056884A/ja active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6001183A (en) * | 1996-06-10 | 1999-12-14 | Emcore Corporation | Wafer carriers for epitaxial growth processes |
JPH1136076A (ja) * | 1997-07-16 | 1999-02-09 | Tokyo Electron Ltd | Cvd成膜装置およびcvd成膜方法 |
JP2003100644A (ja) * | 2001-09-27 | 2003-04-04 | Hitachi Ltd | 半導体製造装置 |
JP2004119786A (ja) * | 2002-09-27 | 2004-04-15 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
JP2004214316A (ja) * | 2002-12-27 | 2004-07-29 | Ulvac Japan Ltd | 熱板表面のカバー機構及びこの機構を備えた処理装置 |
JP2009076598A (ja) * | 2007-09-19 | 2009-04-09 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
JP2010116606A (ja) * | 2008-11-13 | 2010-05-27 | Sharp Corp | 気相成長装置及びガス供給方法 |
US20100317197A1 (en) * | 2009-06-10 | 2010-12-16 | Novellus Systems, Inc. | Heat Shield for Heater in Semiconductor Processing Apparatus |
JP2013138164A (ja) * | 2011-12-01 | 2013-07-11 | Stanley Electric Co Ltd | 半導体製造装置 |
US20150376780A1 (en) * | 2014-06-27 | 2015-12-31 | Applied Materials, Inc. | Plasma corrosion resistive heater for high temperature processing |
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US20210230749A1 (en) | 2021-07-29 |
TW202021012A (zh) | 2020-06-01 |
WO2020028145A1 (en) | 2020-02-06 |
KR20210029828A (ko) | 2021-03-16 |
CN112534558A (zh) | 2021-03-19 |
US11725285B2 (en) | 2023-08-15 |
JP7440488B2 (ja) | 2024-02-28 |
JP2024056884A (ja) | 2024-04-23 |
TWI823977B (zh) | 2023-12-01 |
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