JP2021525975A - トランジスタおよびダイオードを含む回路およびデバイス - Google Patents
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- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
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- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0783—Lateral bipolar transistors in combination with diodes, or capacitors, or resistors
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- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
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- H—ELECTRICITY
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- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
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- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
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Abstract
Description
を必要とせずにロジックゲートの構築を可能にし、トランジスタカウント(又は、トランジスタ数)を半分にするため、デジタルロジック回路の形成に望ましい。
図1は、インバータ論理ゲート(NOTゲート)を実装した、PNPバイポーラ接合トランジスタと逆バイアスツェナーダイオードとを含む回路の概略図である。
図2は、インバータ論理ゲート(NOTゲート)の機能を実現する、NPNバイポーラ接合トランジスタおよび逆バイアスツェナーダイオードから構成される回路の概略図である。
図3は、図1の2つの回路フラグメントを用いた2つのノーマリオントランジスタから構成されるバッファの機能を実現する回路の概略図である。
図4は、図1の2つの回路フラグメントを用いて実現されるノーマリオントランジスタからなるNANDゲートを実現するための回路の概略図である。
図5は、図1の回路のうちの2つを使用して実現されるトランジスタ上で通常構成されるNORゲートを実現する回路の概略図である。
図6A、図6B及び図6Cは、横方向PNPバイポーラトランジスタおよびツェナーダイオードを提供するための変形半導体層構造の断面側面図である。
Claims (21)
- 回路であって、
バイポーラトランジスタと、
信号源にスイッチング可能に接続可能である前記バイポーラトランジスタのベース端子と、
前記トランジスタの前記ベース端子に接続された第1端子と基準電圧に接続された第2端子とを有するダイオードを有し、
前記回路は、前記信号源が前記トランジスタの前記ベース端子に接続されていないときに、前記バイポーラトランジスタのエミッタ端子に印加された電圧が前記トランジスタの前記ベース端子を通して前記ダイオードを通して電流を流し、前記トランジスタをオン状態にするよう構成されており、
前記信号源のインピーダンスが前記エミッタ及びベース端子を通る前記トランジスタのインピーダンスよりも低く、
前記信号源が前記トランジスタの前記ベース端子に接続されたときに、前記ベース端子を通る電流の流れが減少して前記トランジスタがオフ状態に切り替わるように電流制限機能を提供するように前記ダイオードが選択されることを特徴とする回路。 - 前記ダイオードは、前記トランジスタの前記エミッタ端子に電圧が印加されたときに逆バイアスされるように前記回路内で配置される、請求項1に記載の回路。
- 前記ダイオードが、摂氏1度当たり−2mV〜2mVの範囲の温度係数を有する、請求項1または2に記載の回路。
- 前記ダイオードがツェナーダイオードである、請求項1、2または3に記載の回路。
- 前記ツェナーダイオードが、4ボルトから5.6ボルトまでの範囲のツェナー電圧を有する、請求項4に記載の回路。
- 前記ツェナーダイオードは、約5.6ボルトのツェナー電圧を有する、請求項5に記載の回路。
- 請求項1〜6のいずれかに記載の回路を含むインバータ論理ゲート回路。
- 回路を動作させる方法であって、
前記回路は、バイポーラトランジスタと、前記トランジスタの前記ベース端子に接続された第1端子を有するダイオードと、基準電圧に接続された前記ダイオードの第2端子を備え、
前記トランジスタの前記エミッタ端子と前記ダイオードの前記第2端子との間に電圧が印加され、
前記方法は、
非接続時には前記トランジスタの前記ベース端子を通して前記トランジスタを通して電流を流して前記トランジスタをオンに切り替えるように、
接続時には前記トランジスタの前記制御端子を通る電流が減少して前記トランジスタをオフに切り替えるように、
前記トランジスタの前記ベース端子と前記ダイオードの前記第1端子を前記バイポーラトランジスタの前記エミッタ端子と前記ベース端子の両端のインピーダンスよりも低いインピーダンスを有する信号源に切替可能に接続することを含む方法。 - 前記ダイオードが逆バイアスされるように、前記電圧が前記トランジスタのエミッタ端子と前記ダイオードの前記第2端子との間に印加されることを特徴とする請求項8に記載の方法。
- 前記ダイオードはツェナーダイオードであり、前記トランジスタがオンのときに前記ダイオードの両端に印加される電圧は、前記ツェナーダイオードの降伏電圧未満である、請求項8または9に記載の方法。
- トランジスタのコレクタ領域およびエミッタ領域を提供する第1のタイプの半導体材料の第1の領域および第2の領域と、前記第1のタイプの前記第1の領域および前記第2の領域のそれぞれの間に介在され、前記第1のタイプの前記第1の領域および前記第2の領域のそれぞれに接触する前記トランジスタのベース領域を提供する第2のタイプの第1の領域を有するバイポーラトランジスタと、
第2のタイプの第1の領域と、前記第2のタイプの前記第1の領域の比較的高濃度にドープされた領域と接触する前記第1のタイプの半導体のさらなる領域を有するダイオードと、
を有する半導体デバイス。 - 前記ダイオードが、前記第2のタイプの前記第1の領域の残部と比較して相対的に高濃度にドープされた前記第2のタイプの前記第1の領域の一部から構成される、請求項11に記載の半導体デバイス。
- 比較的高濃度にドープされた前記第2のタイプの前記第1の領域の領域および前記第1のタイプの半導体の前記さらなる領域がツェナーダイオードを提供する、請求項11または12に記載の半導体デバイス。
- 請求項11〜13のいずれかに記載の半導体デバイスであって、前記トランジスタは横方向バイポーラ接合トランジスタであり、前記第1のタイプの前記第1および第2の領域は前記第2のタイプの前記第1の領域の周囲で、互いに横方向に離間し、前記第2のタイプの前記第1の領域と同じ側に位置する、半導体デバイス。
- 前記ダイオードの端子を提供する前記第1のタイプの半導体の前記さらなる領域に接続される電気端子を備える、請求項11〜14のいずれか1項に記載の半導体デバイス。
- 前記第1のタイプの半導体の前記さらなる領域は少なくとも部分的に、前記トランジスタのベース領域を提供する前記第2のタイプの第1の領域を少なくとも部分的に規定する半導体ウェハ上に堆積された半導体層によって提供される、請求項11〜15のいずれか1項に記載の半導体デバイス。
- 前記第1のタイプの半導体材料の前記第1および第2の領域が、前記トランジスタのベース領域を提供する前記第2のタイプの第1の領域を少なくとも部分的に規定する半導体ウェハ上に堆積された半導体層によって提供される、請求項11〜16のいずれかに記載の半導体デバイス。
- 前記トランジスタのためのベース接点を含み、前記ベース接点が、前記第2のタイプの前記第1の領域の前記比較的高濃度にドープされた部分と直接接触している、請求項12〜17のいずれか1項に記載の半導体デバイス。
- 前記第1のタイプの半導体の前記さらなる領域と直接接触する前記ダイオードのための接触端子を含む、請求項11〜18のいずれかに記載の半導体デバイス。
- 前記第1のタイプの半導体の前記さらなる領域が、比較的高濃度にドープされ、前記第2のタイプの前記第1の領域と一緒になって前記ダイオードを提供する第1の領域と、前記第1の領域に対して比較的低濃度にドープされ、基板層を提供する第2の領域とを含む、請求項11〜19のいずれか1項に記載の半導体デバイス。
- 前記基板層内に位置し、前記基板層によって互いに分離されている前記第2のタイプの複数の第1の領域を含む、請求項20に記載の半導体デバイス。
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GB1808840.1 | 2018-05-30 | ||
GBGB1808840.1A GB201808840D0 (en) | 2018-05-30 | 2018-05-30 | A translstor device |
GBGB1808960.7A GB201808960D0 (en) | 2018-05-31 | 2018-05-31 | A transistor device |
GB1808960.7 | 2018-05-31 | ||
GBGB1816688.4A GB201816688D0 (en) | 2018-10-12 | 2018-10-12 | A transistor device |
GB1816688.4 | 2018-10-12 | ||
GBGB1817199.1A GB201817199D0 (en) | 2018-10-22 | 2018-10-22 | A transistor device |
GB1817199.1 | 2018-10-22 | ||
PCT/GB2019/051465 WO2019229432A1 (en) | 2018-05-30 | 2019-05-29 | A Circuit and Device Including a Transistor and Diode |
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EP (2) | EP3804138B1 (ja) |
JP (1) | JP7395196B2 (ja) |
KR (1) | KR20210014678A (ja) |
CN (1) | CN112470403B (ja) |
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US11646364B2 (en) * | 2020-03-25 | 2023-05-09 | Richtek Technology Corporation | Power device having lateral insulated gate bipolar transistor (LIGBT) and manufacturing method thereof |
EP4070384B1 (en) | 2020-12-09 | 2024-04-17 | Search for the Next Ltd | A transistor device |
GB202019401D0 (en) | 2020-12-09 | 2021-01-20 | Search For The Next Ltd | A novel transistor device |
GB2615153A (en) * | 2021-11-08 | 2023-08-02 | Search For The Next Ltd | A novel transistor device and circuits comprising said transistor device |
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- 2019-05-29 JP JP2021517537A patent/JP7395196B2/ja active Active
- 2019-05-29 KR KR1020207037590A patent/KR20210014678A/ko not_active Application Discontinuation
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Patent Citations (5)
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JPS5474681A (en) * | 1977-11-28 | 1979-06-14 | Hitachi Ltd | Constant voltage diode |
JPH0334253U (ja) * | 1989-08-10 | 1991-04-04 | ||
JPH0575029A (ja) * | 1991-09-13 | 1993-03-26 | Nec Corp | 半導体装置 |
JPH07122712A (ja) * | 1993-10-27 | 1995-05-12 | Rohm Co Ltd | 半導体装置 |
JPH0917804A (ja) * | 1995-06-30 | 1997-01-17 | Nec Kansai Ltd | 半導体装置 |
Also Published As
Publication number | Publication date |
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US20210211125A1 (en) | 2021-07-08 |
EP3804138C0 (en) | 2023-07-12 |
CN112470403A (zh) | 2021-03-09 |
IL279061A (en) | 2021-01-31 |
WO2019229432A1 (en) | 2019-12-05 |
JP7395196B2 (ja) | 2023-12-11 |
EP4250569A2 (en) | 2023-09-27 |
CN112470403B (zh) | 2024-07-16 |
EP3804138B1 (en) | 2023-07-12 |
EP4250569A3 (en) | 2023-12-13 |
US11929741B2 (en) | 2024-03-12 |
KR20210014678A (ko) | 2021-02-09 |
EP3804138A1 (en) | 2021-04-14 |
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