JP2021180258A - 光電変換装置、撮像システム、移動体 - Google Patents
光電変換装置、撮像システム、移動体 Download PDFInfo
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- JP2021180258A JP2021180258A JP2020084828A JP2020084828A JP2021180258A JP 2021180258 A JP2021180258 A JP 2021180258A JP 2020084828 A JP2020084828 A JP 2020084828A JP 2020084828 A JP2020084828 A JP 2020084828A JP 2021180258 A JP2021180258 A JP 2021180258A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 126
- 238000003384 imaging method Methods 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims abstract description 93
- 239000004065 semiconductor Substances 0.000 claims abstract description 91
- 238000012545 processing Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 abstract description 8
- 230000006378 damage Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 104
- 238000010586 diagram Methods 0.000 description 35
- 230000005611 electricity Effects 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 11
- 230000003068 static effect Effects 0.000 description 11
- 238000000926 separation method Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 235000019439 ethyl acetate Nutrition 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H01L27/0203—Particular design considerations for integrated circuits
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- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
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- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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- H01L27/144—Devices controlled by radiation
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- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
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- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/08145—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H01L2224/92—Specific sequence of method steps
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Abstract
Description
以下、図面を参照しながら本実施形態に係る光電変換装置の構造を説明する。
以下、図6〜図9を用いて本実施形態の光電変換装置について説明する。なお、以下の説明では、第1実施形態と異なる点を中心に説明することとし、第1実施形態と重複する部分については説明を省略することがある。
以下、図10〜図11を用いて本第3実施形態に係る光電変換装置の構造を説明する。本第3実施形態に係る光電変換装置の等価回路図は、図1と同様である。
以下、図12〜図13を用いて本第4実施形態に係る光電変換装置の構造を説明する。
以下、図14〜図17を用いて本第5実施形態に係る光電変換装置の構造を説明する。
以下、図18〜図20を用いて本第5実施形態に係る光電変換装置の構造を説明する。
以下、図21〜図24を用いて本第5実施形態に係る光電変換装置の構造を説明する。
以下にて、本実施形態に係る静電気保護回路として、積層構造を備える固体撮像装置に搭載される静電気保護回路について説明する。なお、本実施形態の固体撮像装置としてイメージセンサ(CMOSイメージセンサ)について説明するが、本実施形態において説明するイメージセンサの構成はあくまで例示であって限定されるものではない。例えば、対象物への距離を測定する測距装置、被写体からの光の強度を測定する測光装置、複写機の原稿読み取り部に用いられるラインセンサ等にも適用が可能である。
本実施形態による光電変換システムについて、図29を用いて説明する。図29は、本実施形態による光電変換システムの概略構成を示すブロック図である。
本実施形態の光電変換システム及び移動体について、図30を用いて説明する。図30は、本実施形態の光電変換システム及び移動体の構成を示す図である。
本発明は、上記実施形態に限らず種々の変形が可能である。
101A、101B、102A、102B ダイオード
103A、103B 内部回路
Claims (8)
- 入射光を受けて信号電荷を各々が生成する、複数の光電変換部を備える第1半導体基板と、
前記信号電荷に基づく信号が入力され、前記信号を処理する信号処理回路を有する第2半導体基板とが積層された光電変換装置であって、
前記光電変換装置の外部に接続されるパッドと、
前記第1半導体基板に設けられた第1保護回路と、
前記第2半導体基板に設けられた第2保護回路とを有し、
前記第1保護回路と前記第2保護回路の少なくとも一方が、平面視において、前記パッドが設けられた領域の外部に設けられていることを特徴とする光電変換装置。 - 前記第1保護回路と前記第2保護回路は、平面視において重なる位置に設けられていることを特徴とする請求項1に記載の光電変換装置。
- 前記光電変換装置は、外部から電源電圧が入力されるパッドを有し、
前記第2保護回路は、前記パッドに対し、平面視において重なる位置に設けられていることを特徴とする請求項1に記載の光電変換装置。 - 前記光電変換装置は、外部から電源電圧が入力されるパッドを有し、
前記パッドに、前記第1保護回路と、前記第2保護回路の少なくとも一方が接続されることを特徴とする請求項1に記載の光電変換装置。 - 前記パッドに、前記第1保護回路と、前記第2保護回路の両方が接続されることを特徴とする請求項1に記載の光電変換装置。
- 前記信号処理回路に電源電圧を供給する電源配線を有し、前記第2保護回路は、前記電源配線に接続されていることを特徴とする請求項1に記載の光電変換装置。
- 請求項1〜6のいずれか1項に記載の光電変換装置と、
前記光電変換装置が出力する信号を用いて画像を生成する信号処理部とを有することを特徴とする光電変換システム。 - 請求項1〜6のいずれか1項に記載の光電変換装置を備える移動体であって、
前記光電変換装置が出力する信号を用いて前記移動体の移動を制御する制御部を有することを特徴とする移動体。
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