JP2021139970A - 反射型マスクブランクの製造方法、及び反射型マスクブランク - Google Patents
反射型マスクブランクの製造方法、及び反射型マスクブランク Download PDFInfo
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
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- C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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Abstract
Description
1.基板と、該基板の一の主表面上に形成された多層反射膜及び該多層反射膜上に形成された吸収体膜とを備え、上記多層反射膜が、互いに光学特性が異なる第1の層及び第2の層が交互に各々2層以上積層されてなる反射型マスクブランクを製造する方法であって、
上記多層反射膜を構成する第1の層及び第2の層を交互にスパッタ法により形成する工程を含み、
上記多層反射膜を構成する第1の層及び第2の層の形成において、各々の層の形成を、形成開始時から所定の厚さに到達するまでの第1段階と、上記所定の厚さに到達した後から形成終了時までの第2段階とで構成し、
第1の層の形成後の第2の層の形成、又は第2の層形成後の第1の層の形成において、第1段階のスパッタ圧力を、直前の層の形成終了時のスパッタ圧力より高く、かつ第2段階のスパッタ圧力より高くすることを特徴とする反射型マスクブランクの製造方法。
2.上記第1段階において形成される上記所定の厚さが、第1段階及び第2段階の全体で形成される厚さの1/20以上1/2未満であることを特徴とする1記載の製造方法。
3.上記第1段階のスパッタ圧力が0.08Pa以上であり、上記第2段階のスパッタ圧力が0.08Pa未満であることを特徴とする1又は2記載の製造方法。
4.上記スパッタ法がマグネトロンスパッタ法であることを特徴とする1乃至3のいずれかに記載の製造方法。
5.上記第1段階及び第2段階のスパッタ圧力を、Arガスで調整することを特徴とする1乃至4のいずれかに記載の製造方法。
6.上記第1の層及び第2の層が、各々、Si層及びMo層であり、上記第1の層及び第2の層が交互に各々40層以上積層されていることを特徴とする1乃至5のいずれかに記載の製造方法。
7.1乃至6のいずれかに記載の製造方法により製造してなる反射型マスクブランクであって、
基板と、該基板の一の主表面上に形成された多層反射膜及び該多層反射膜上に形成された吸収体膜とを備え、上記多層反射膜が、互いに光学特性が異なる第1の層及び第2の層が交互に各々2層以上積層されてなることを特徴とする反射型マスクブランク。
8.上記多層反射膜の波長13〜14nmの極端紫外線(EUV)に対する入射角6°での反射率が66.5%以上であることを特徴とする7記載の反射型マスクブランク。
9.上記第1の層及び第2の層が、各々、Si層及びMo層であり、上記第1の層及び第2の層が交互に各々40層以上積層されていることを特徴とする7又は8記載の反射型マスクブランク。
10.上記多層反射膜が形成されている上記基板の主表面の表面粗さRMSが0.15nm以下であることを特徴とする7乃至9のいずれかに記載の反射型マスクブランク。
本発明の反射型マスクブランクは、基板と、基板の一の主表面(表側の面)上に形成された多層反射膜、具体的には、極端紫外(EUV)光などの露光光を反射する多層反射膜と、多層反射膜上に形成された吸収体膜、具体的には、EUV光などの露光光を吸収し、反射率を低下させる吸収体膜とを備える。反射型マスクブランク(EUV用反射型マスクブランク)からは、吸収体膜をパターニングして形成される吸収体パターン(吸収体膜のパターン)を有する反射型マスク(EUV用反射型マスク)が製造される。EUVリソグラフィに用いられるEUV光の波長は13〜14nmであり、通常、波長が13.5nm程度の光である。
152mm角、6.35mm厚の石英ガラス基板に、MoターゲットとSiターゲットを用い、両ターゲットと基板の主表面とを対向させ、基板を自転させながら、DCパルスマグネトロンスパッタリングにより、多層反射膜を成膜した。
152mm角、6.35mm厚の石英ガラス基板に、MoターゲットとSiターゲットを用い、両ターゲットと基板の主表面とを対向させ、基板を自転させながら、DCパルスマグネトロンスパッタリングにより、多層反射膜を成膜した。
152mm角、6.35mm厚の石英ガラス基板に、MoターゲットとSiターゲットを用い、両ターゲットと基板の主表面とを対向させ、基板を自転させながら、DCパルスマグネトロンスパッタリングにより、多層反射膜を成膜した。
101 基板
102 多層反射膜
103 吸収体膜
104 保護膜
105 導電膜
Claims (10)
- 基板と、該基板の一の主表面上に形成された多層反射膜及び該多層反射膜上に形成された吸収体膜とを備え、上記多層反射膜が、互いに光学特性が異なる第1の層及び第2の層が交互に各々2層以上積層されてなる反射型マスクブランクを製造する方法であって、
上記多層反射膜を構成する第1の層及び第2の層を交互にスパッタ法により形成する工程を含み、
上記多層反射膜を構成する第1の層及び第2の層の形成において、各々の層の形成を、形成開始時から所定の厚さに到達するまでの第1段階と、上記所定の厚さに到達した後から形成終了時までの第2段階とで構成し、
第1の層の形成後の第2の層の形成、又は第2の層形成後の第1の層の形成において、第1段階のスパッタ圧力を、直前の層の形成終了時のスパッタ圧力より高く、かつ第2段階のスパッタ圧力より高くすることを特徴とする反射型マスクブランクの製造方法。 - 上記第1段階において形成される上記所定の厚さが、第1段階及び第2段階の全体で形成される厚さの1/20以上1/2未満であることを特徴とする請求項1記載の製造方法。
- 上記第1段階のスパッタ圧力が0.08Pa以上であり、上記第2段階のスパッタ圧力が0.08Pa未満であることを特徴とする請求項1又は2記載の製造方法。
- 上記スパッタ法がマグネトロンスパッタ法であることを特徴とする請求項1乃至3のいずれか1項記載の製造方法。
- 上記第1段階及び第2段階のスパッタ圧力を、Arガスで調整することを特徴とする請求項1乃至4のいずれか1項記載の製造方法。
- 上記第1の層及び第2の層が、各々、Si層及びMo層であり、上記第1の層及び第2の層が交互に各々40層以上積層されていることを特徴とする請求項1乃至5のいずれか1項記載の製造方法。
- 請求項1乃至6のいずれか1項記載の製造方法により製造してなる反射型マスクブランクであって、
基板と、該基板の一の主表面上に形成された多層反射膜及び該多層反射膜上に形成された吸収体膜とを備え、上記多層反射膜が、互いに光学特性が異なる第1の層及び第2の層が交互に各々2層以上積層されてなることを特徴とする反射型マスクブランク。 - 上記多層反射膜の波長13〜14nmの極端紫外線(EUV)に対する入射角6°での反射率が66.5%以上であることを特徴とする請求項7記載の反射型マスクブランク。
- 上記第1の層及び第2の層が、各々、Si層及びMo層であり、上記第1の層及び第2の層が交互に各々40層以上積層されていることを特徴とする請求項7又は8記載の反射型マスクブランク。
- 上記多層反射膜が形成されている上記基板の主表面の表面粗さRMSが0.15nm以下であることを特徴とする請求項7乃至9のいずれか1項記載の反射型マスクブランク。
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Cited By (9)
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---|---|---|---|---|
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EP4343433A1 (en) | 2022-09-22 | 2024-03-27 | Shin-Etsu Chemical Co., Ltd. | Polymer, chemically amplified positive resist composition, resist patterning process, and mask blank |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10298748A (ja) * | 1997-02-26 | 1998-11-10 | Applied Materials Inc | ゴールデンチタンナイトライドを堆積する方法 |
JPH10298754A (ja) * | 1997-02-20 | 1998-11-10 | Shibaura Eng Works Co Ltd | スパッタリング用電源装置および該装置を用いたスパッタリング装置 |
JP2000309868A (ja) * | 1999-04-23 | 2000-11-07 | Matsushita Electric Ind Co Ltd | マグネトロンスパッタ方法と装置 |
JP2002222764A (ja) * | 2000-11-22 | 2002-08-09 | Hoya Corp | 多層膜付き基板、露光用反射型マスクブランク、露光用反射型マスクおよびその製造方法、並びに半導体の製造方法 |
JP2002323599A (ja) * | 2001-04-27 | 2002-11-08 | Nikon Corp | 多層膜反射鏡の製造方法及び露光装置 |
US20030219622A1 (en) * | 2002-04-22 | 2003-11-27 | Niebauer Daniel A. | Electrical connectors incorporating low friction coatings and methods for making them |
JP2004331998A (ja) * | 2003-04-30 | 2004-11-25 | Nikon Corp | 多層膜成膜方法、反射鏡及び露光装置 |
JP2004342867A (ja) * | 2003-05-16 | 2004-12-02 | Hoya Corp | 反射型マスクブランクス及び反射型マスク |
JP2005290464A (ja) * | 2004-03-31 | 2005-10-20 | Canon Inc | スパッタリング装置及び方法 |
JP2008103481A (ja) * | 2006-10-18 | 2008-05-01 | Hoya Corp | 露光用反射型マスクブランク及び露光用反射型マスク、多層反射膜付き基板、並びに半導体装置の製造方法 |
JP2009302550A (ja) * | 2006-09-13 | 2009-12-24 | Canon Anelva Corp | 磁気抵抗効果素子の製造装置 |
WO2013145050A1 (ja) * | 2012-03-30 | 2013-10-03 | キヤノンアネルバ株式会社 | プラズマ処理装置および基板処理システム |
JP2015155577A (ja) * | 2010-06-25 | 2015-08-27 | キヤノンアネルバ株式会社 | 成膜方法、および制御装置 |
JP2016081050A (ja) * | 2014-10-20 | 2016-05-16 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランク、ならびに、その検査方法および製造方法 |
JP2016166426A (ja) * | 2012-11-30 | 2016-09-15 | キヤノンアネルバ株式会社 | スパッタリング装置および基板処理装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3456204B2 (ja) * | 2001-01-09 | 2003-10-14 | 日立金属株式会社 | 磁気式エンコーダー |
US5158933A (en) * | 1990-11-15 | 1992-10-27 | Holtz Ronald L | Phase separated composite materials |
US5513040B1 (en) * | 1994-11-01 | 1998-02-03 | Deposition Technology Inc | Optical device having low visual light transmission and low visual light reflection |
US6229652B1 (en) * | 1998-11-25 | 2001-05-08 | The Regents Of The University Of California | High reflectance and low stress Mo2C/Be multilayers |
US6620298B1 (en) | 1999-04-23 | 2003-09-16 | Matsushita Electric Industrial Co., Ltd. | Magnetron sputtering method and apparatus |
US6737201B2 (en) | 2000-11-22 | 2004-05-18 | Hoya Corporation | Substrate with multilayer film, reflection type mask blank for exposure, reflection type mask for exposure and production method thereof as well as production method of semiconductor device |
US7355337B2 (en) * | 2002-12-27 | 2008-04-08 | Seiko Epson Corporation | Display panel, electronic apparatus with the same, and method of manufacturing the same |
JP2006091202A (ja) | 2004-09-22 | 2006-04-06 | Canon Inc | 多層膜ミラーの製造方法、多層膜ミラー、露光装置及びデバイス製造方法 |
US7504185B2 (en) | 2005-10-03 | 2009-03-17 | Asahi Glass Company, Limited | Method for depositing multi-layer film of mask blank for EUV lithography and method for producing mask blank for EUV lithography |
JP5167050B2 (ja) * | 2008-09-30 | 2013-03-21 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法およびマスクの製造方法 |
EP2511943A4 (en) | 2009-12-09 | 2015-09-09 | Asahi Glass Co Ltd | OPTICAL ELEMENT FOR USE IN EUV LITHOGRAPHY |
KR101878164B1 (ko) | 2012-12-28 | 2018-07-13 | 호야 가부시키가이샤 | 마스크 블랭크용 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크, 마스크 블랭크용 기판의 제조방법 및 다층 반사막 부착 기판의 제조방법, 그리고 반도체 장치의 제조방법 |
US9134604B2 (en) * | 2013-08-30 | 2015-09-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Extreme ultraviolet (EUV) mask and method of fabricating the EUV mask |
US9818442B2 (en) * | 2014-12-01 | 2017-11-14 | WD Media, LLC | Magnetic media having improved magnetic grain size distribution and intergranular segregation |
JP6805674B2 (ja) * | 2016-09-21 | 2020-12-23 | 豊田合成株式会社 | 発光素子及びその製造方法 |
WO2021132111A1 (ja) * | 2019-12-27 | 2021-07-01 | Agc株式会社 | Euvリソグラフィ用反射型マスクブランク、euvリソグラフィ用反射型マスク、およびそれらの製造方法 |
-
2020
- 2020-03-03 JP JP2020035517A patent/JP7318565B2/ja active Active
-
2021
- 2021-02-22 US US17/181,026 patent/US11789357B2/en active Active
- 2021-02-25 KR KR1020210025416A patent/KR20210111688A/ko not_active Application Discontinuation
- 2021-02-26 EP EP21159655.6A patent/EP3876033A1/en active Pending
- 2021-02-26 SG SG10202102022V patent/SG10202102022VA/en unknown
- 2021-03-02 CN CN202110229567.6A patent/CN113341644A/zh active Pending
- 2021-03-02 TW TW110107216A patent/TW202141163A/zh unknown
-
2023
- 2023-05-23 JP JP2023084732A patent/JP2023109913A/ja active Pending
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10298754A (ja) * | 1997-02-20 | 1998-11-10 | Shibaura Eng Works Co Ltd | スパッタリング用電源装置および該装置を用いたスパッタリング装置 |
JPH10298748A (ja) * | 1997-02-26 | 1998-11-10 | Applied Materials Inc | ゴールデンチタンナイトライドを堆積する方法 |
JP2000309868A (ja) * | 1999-04-23 | 2000-11-07 | Matsushita Electric Ind Co Ltd | マグネトロンスパッタ方法と装置 |
JP2002222764A (ja) * | 2000-11-22 | 2002-08-09 | Hoya Corp | 多層膜付き基板、露光用反射型マスクブランク、露光用反射型マスクおよびその製造方法、並びに半導体の製造方法 |
JP2002323599A (ja) * | 2001-04-27 | 2002-11-08 | Nikon Corp | 多層膜反射鏡の製造方法及び露光装置 |
US20030219622A1 (en) * | 2002-04-22 | 2003-11-27 | Niebauer Daniel A. | Electrical connectors incorporating low friction coatings and methods for making them |
JP2004331998A (ja) * | 2003-04-30 | 2004-11-25 | Nikon Corp | 多層膜成膜方法、反射鏡及び露光装置 |
JP2004342867A (ja) * | 2003-05-16 | 2004-12-02 | Hoya Corp | 反射型マスクブランクス及び反射型マスク |
JP2005290464A (ja) * | 2004-03-31 | 2005-10-20 | Canon Inc | スパッタリング装置及び方法 |
JP2009302550A (ja) * | 2006-09-13 | 2009-12-24 | Canon Anelva Corp | 磁気抵抗効果素子の製造装置 |
JP2008103481A (ja) * | 2006-10-18 | 2008-05-01 | Hoya Corp | 露光用反射型マスクブランク及び露光用反射型マスク、多層反射膜付き基板、並びに半導体装置の製造方法 |
JP2015155577A (ja) * | 2010-06-25 | 2015-08-27 | キヤノンアネルバ株式会社 | 成膜方法、および制御装置 |
WO2013145050A1 (ja) * | 2012-03-30 | 2013-10-03 | キヤノンアネルバ株式会社 | プラズマ処理装置および基板処理システム |
JP2016166426A (ja) * | 2012-11-30 | 2016-09-15 | キヤノンアネルバ株式会社 | スパッタリング装置および基板処理装置 |
JP2016081050A (ja) * | 2014-10-20 | 2016-05-16 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランク、ならびに、その検査方法および製造方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4276533A1 (en) | 2022-05-10 | 2023-11-15 | Shin-Etsu Chemical Co., Ltd. | Chemically amplified positive resist composition and resist pattern forming process |
EP4276534A1 (en) | 2022-05-10 | 2023-11-15 | Shin-Etsu Chemical Co., Ltd. | Mask blank, resist pattern forming process and chemically amplified positive resist composition |
EP4286945A1 (en) | 2022-06-01 | 2023-12-06 | Shin-Etsu Chemical Co., Ltd. | Chemically amplified negative resist composition and resist pattern forming process |
EP4286946A1 (en) | 2022-06-01 | 2023-12-06 | Shin-Etsu Chemical Co., Ltd. | Chemically amplified positive resist composition and resist pattern forming process |
EP4286944A1 (en) | 2022-06-01 | 2023-12-06 | Shin-Etsu Chemical Co., Ltd. | Chemically amplified positive resist composition and resist pattern forming process |
EP4286943A1 (en) | 2022-06-01 | 2023-12-06 | Shin-Etsu Chemical Co., Ltd. | Chemically amplified negative resist composition and resist pattern forming process |
EP4325292A1 (en) | 2022-08-10 | 2024-02-21 | Shin-Etsu Chemical Co., Ltd. | Chemically amplified positive resist composition and resist pattern forming process |
EP4336261A1 (en) | 2022-09-07 | 2024-03-13 | Shin-Etsu Chemical Co., Ltd. | Chemically amplified positive resist composition and resist pattern forming process |
EP4343433A1 (en) | 2022-09-22 | 2024-03-27 | Shin-Etsu Chemical Co., Ltd. | Polymer, chemically amplified positive resist composition, resist patterning process, and mask blank |
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Publication number | Publication date |
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TW202141163A (zh) | 2021-11-01 |
US11789357B2 (en) | 2023-10-17 |
CN113341644A (zh) | 2021-09-03 |
SG10202102022VA (en) | 2021-10-28 |
KR20210111688A (ko) | 2021-09-13 |
EP3876033A1 (en) | 2021-09-08 |
JP7318565B2 (ja) | 2023-08-01 |
JP2023109913A (ja) | 2023-08-08 |
US20210278759A1 (en) | 2021-09-09 |
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