JP2021048243A - 基板固定装置 - Google Patents
基板固定装置 Download PDFInfo
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- JP2021048243A JP2021048243A JP2019169649A JP2019169649A JP2021048243A JP 2021048243 A JP2021048243 A JP 2021048243A JP 2019169649 A JP2019169649 A JP 2019169649A JP 2019169649 A JP2019169649 A JP 2019169649A JP 2021048243 A JP2021048243 A JP 2021048243A
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- 239000000758 substrate Substances 0.000 title claims abstract description 85
- 239000011148 porous material Substances 0.000 claims abstract description 7
- 230000000149 penetrating effect Effects 0.000 claims abstract description 6
- 239000011224 oxide ceramic Substances 0.000 claims description 10
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 10
- 239000011575 calcium Substances 0.000 claims description 9
- 239000011777 magnesium Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 7
- 229910052791 calcium Inorganic materials 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 5
- 230000002159 abnormal effect Effects 0.000 abstract description 12
- 230000035515 penetration Effects 0.000 abstract 3
- 239000007789 gas Substances 0.000 description 50
- 239000003507 refrigerant Substances 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000012790 adhesive layer Substances 0.000 description 10
- 238000001816 cooling Methods 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000005553 drilling Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
図3及び図4は、本実施形態に係る基板固定装置の製造工程を例示する図であり、図1(b)に対応する断面を示している。ここでは、図3及び図4を参照しながら、静電チャック30にガス孔33を形成する工程等を中心に説明する。
10 ベースプレート
10a 上面
10b 下面
11 ガス供給部
15 冷却機構
20 接着層
30 静電チャック
31 基体
31a 載置面
32 静電電極
33 ガス孔
33s 未充填領域
60 多孔質体
111 ガス流路
112 ガス注入部
113 ガス排出部
151 冷媒流路
152 冷媒導入部
153 冷媒排出部
331、332 凹部
331a、332a 底面
333、335 貫通孔
333a 端面
601 球状酸化物セラミックス粒子
602 混合酸化物
Claims (8)
- 内部にガス供給部を備えたベースプレートと、前記ベースプレート上に設けられた静電チャックと、を有し、
前記静電チャックは、一方の面が吸着対象物の載置面である基体と、前記基体を貫通するガス孔と、を備え、
前記ガス孔を介して、前記ガス供給部から前記載置面にガスが供給される基板固定装置であって、
前記ガス孔は、前記基体の前記載置面の反対面から前記載置面側に窪む第1凹部と、前記第1凹部の底面から更に前記載置面側に窪む第2凹部と、前記第2凹部の底面から前記載置面に貫通する貫通孔と、を有し、
前記第1凹部内の全領域、及び前記第2凹部内の未充填領域を除く領域に、多孔質体が充填され、
前記未充填領域は、前記第2凹部の底面の前記貫通孔と連通する位置から前記反対面側に窪む凹部であり、前記凹部は前記貫通孔と連通する空間である基板固定装置。 - 平面視において、前記第2凹部の大きさは前記第1凹部の大きさよりも小さく、前記貫通孔の大きさは前記第2凹部の大きさよりも更に小さい請求項1に記載の基板固定装置。
- 前記第2凹部の深さは、50μm以上500μm以下である請求項1又は2に記載の基板固定装置。
- 前記多孔質体は、連通する複数の気孔を備え、
前記連通する複数の気孔を介して、前記ガスが供給される請求項1乃至3の何れか一項に記載の基板固定装置。 - 前記基体と前記多孔質体は、同一の酸化物セラミックスを含む請求項1乃至4の何れか一項に記載の基板固定装置。
- 前記酸化物セラミックスは、酸化アルミニウムである請求項5に記載の基板固定装置。
- 前記基体と前記多孔質体は、同一の2種以上の元素の酸化物を含み、
前記基体内の前記酸化物の組成比は、前記多孔質体の内の前記酸化物の組成比と同じに設定されている請求項1乃至6の何れか一項に記載の基板固定装置。 - 前記2種以上の元素は、ケイ素、マグネシウム、カルシウム、及びイットリウムから選択される請求項7に記載の基板固定装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019169649A JP7291046B2 (ja) | 2019-09-18 | 2019-09-18 | 基板固定装置 |
US17/010,149 US20210082731A1 (en) | 2019-09-18 | 2020-09-02 | Substrate fixing device and electrostatic chuck |
KR1020200116594A KR20210033420A (ko) | 2019-09-18 | 2020-09-11 | 기판 고정 장치 및 정전 척 |
CN202010959801.6A CN112530778A (zh) | 2019-09-18 | 2020-09-14 | 基板固定装置 |
TW109131660A TWI849222B (zh) | 2019-09-18 | 2020-09-15 | 基板固定裝置 |
Applications Claiming Priority (1)
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JP2019169649A JP7291046B2 (ja) | 2019-09-18 | 2019-09-18 | 基板固定装置 |
Publications (2)
Publication Number | Publication Date |
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JP2021048243A true JP2021048243A (ja) | 2021-03-25 |
JP7291046B2 JP7291046B2 (ja) | 2023-06-14 |
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JP2019169649A Active JP7291046B2 (ja) | 2019-09-18 | 2019-09-18 | 基板固定装置 |
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US (1) | US20210082731A1 (ja) |
JP (1) | JP7291046B2 (ja) |
KR (1) | KR20210033420A (ja) |
CN (1) | CN112530778A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024079880A1 (ja) * | 2022-10-14 | 2024-04-18 | 日本碍子株式会社 | ウエハ載置台 |
Citations (5)
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US6490145B1 (en) * | 2001-07-18 | 2002-12-03 | Applied Materials, Inc. | Substrate support pedestal |
JP2013232641A (ja) * | 2012-04-27 | 2013-11-14 | Ngk Insulators Ltd | 半導体製造装置用部材 |
JP2013243267A (ja) * | 2012-05-21 | 2013-12-05 | Shinko Electric Ind Co Ltd | 静電チャック、静電チャックの製造方法 |
JP2014209615A (ja) * | 2013-03-29 | 2014-11-06 | Toto株式会社 | 静電チャック |
JP2019519927A (ja) * | 2016-06-07 | 2019-07-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | ガス孔に開口縮小プラグを有する大電力静電チャック |
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US5720818A (en) * | 1996-04-26 | 1998-02-24 | Applied Materials, Inc. | Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck |
WO2007083795A1 (ja) * | 2006-01-20 | 2007-07-26 | Tokyo Electron Limited | プラズマ処理装置 |
JP6722518B2 (ja) * | 2016-06-09 | 2020-07-15 | 新光電気工業株式会社 | 焼結体及びその製造方法と静電チャック |
US10741425B2 (en) * | 2017-02-22 | 2020-08-11 | Lam Research Corporation | Helium plug design to reduce arcing |
US10688750B2 (en) * | 2017-10-03 | 2020-06-23 | Applied Materials, Inc. | Bonding structure of E chuck to aluminum base configuration |
US11626310B2 (en) * | 2018-10-30 | 2023-04-11 | Toto Ltd. | Electrostatic chuck |
CN111668150B (zh) * | 2019-03-05 | 2024-06-28 | Toto株式会社 | 静电吸盘及处理装置 |
-
2019
- 2019-09-18 JP JP2019169649A patent/JP7291046B2/ja active Active
-
2020
- 2020-09-02 US US17/010,149 patent/US20210082731A1/en active Pending
- 2020-09-11 KR KR1020200116594A patent/KR20210033420A/ko active Search and Examination
- 2020-09-14 CN CN202010959801.6A patent/CN112530778A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6490145B1 (en) * | 2001-07-18 | 2002-12-03 | Applied Materials, Inc. | Substrate support pedestal |
JP2013232641A (ja) * | 2012-04-27 | 2013-11-14 | Ngk Insulators Ltd | 半導体製造装置用部材 |
JP2013243267A (ja) * | 2012-05-21 | 2013-12-05 | Shinko Electric Ind Co Ltd | 静電チャック、静電チャックの製造方法 |
JP2014209615A (ja) * | 2013-03-29 | 2014-11-06 | Toto株式会社 | 静電チャック |
JP2019519927A (ja) * | 2016-06-07 | 2019-07-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | ガス孔に開口縮小プラグを有する大電力静電チャック |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024079880A1 (ja) * | 2022-10-14 | 2024-04-18 | 日本碍子株式会社 | ウエハ載置台 |
JP7515017B1 (ja) | 2022-10-14 | 2024-07-11 | 日本碍子株式会社 | ウエハ載置台 |
Also Published As
Publication number | Publication date |
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KR20210033420A (ko) | 2021-03-26 |
US20210082731A1 (en) | 2021-03-18 |
CN112530778A (zh) | 2021-03-19 |
TW202114046A (zh) | 2021-04-01 |
JP7291046B2 (ja) | 2023-06-14 |
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