JP2021044439A - 裏面入射型撮像素子 - Google Patents
裏面入射型撮像素子 Download PDFInfo
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- JP2021044439A JP2021044439A JP2019166268A JP2019166268A JP2021044439A JP 2021044439 A JP2021044439 A JP 2021044439A JP 2019166268 A JP2019166268 A JP 2019166268A JP 2019166268 A JP2019166268 A JP 2019166268A JP 2021044439 A JP2021044439 A JP 2021044439A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 114
- 239000000758 substrate Substances 0.000 claims abstract description 88
- 230000004048 modification Effects 0.000 description 15
- 238000012986 modification Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 4
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (5)
- 表面と前記表面の反対側の裏面とを有し、グラウンド電位が付与される半導体基板と、
前記表面上に形成された半導体層と、を備え、
前記半導体層は、
前記裏面側からの入射光に応じて信号電荷を生成する受光部を含み、前記信号電荷に応じた信号電圧を出力する第1素子部と、
前記第1素子部から出力された前記信号電圧をデジタル信号に変換するアナログ−デジタル変換器を含む第2素子部と、
を有し、
前記表面及び前記裏面に交差する第1方向における前記半導体基板の厚さは、前記第1方向からみて前記受光部に対応する前記半導体基板の第1領域よりも、前記第1方向から見て前記アナログ−デジタル変換器に対応する前記半導体基板の第2領域において相対的に厚い、
裏面入射型撮像素子。 - 前記半導体基板は、前記第1方向からみたときに前記第1領域と前記第2領域との間に位置する第3領域を含み、
前記半導体基板の前記厚さは、前記第1領域から前記第3領域にわたって前記裏面に設けられた凹部によって、前記第2領域よりも前記第1領域において相対的に薄くされている、
請求項1に記載の裏面入射型撮像素子。 - 前記凹部の内側面は、前記第3領域に位置すると共に、前記半導体基板の厚さが前記第1領域から前記第2領域に向けて徐々に厚くなるように傾斜した傾斜面を含む、
請求項2に記載の裏面入射型撮像素子。 - 前記第1素子部は、前記受光部で生成された前記信号電荷を前記信号電圧に変換するアンプ部を含み、
前記アンプ部は、前記第1方向からみて前記第3領域に位置する、
請求項3に記載の裏面入射型撮像素子。 - 前記半導体層は、前記凹部の底部において前記半導体基板から露出されている、
請求項2〜4のいずれか一項に記載の裏面入射型撮像素子。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019166268A JP2021044439A (ja) | 2019-09-12 | 2019-09-12 | 裏面入射型撮像素子 |
KR1020217038351A KR20220059440A (ko) | 2019-09-12 | 2020-07-03 | 이면 입사형 촬상 소자 |
CN202080063858.6A CN114402584B (zh) | 2019-09-12 | 2020-07-03 | 背面入射型摄像元件 |
PCT/JP2020/026253 WO2021049140A1 (ja) | 2019-09-12 | 2020-07-03 | 裏面入射型撮像素子 |
US17/608,212 US11862659B2 (en) | 2019-09-12 | 2020-07-03 | Backside incident-type imaging element |
EP20863594.6A EP3955302A4 (en) | 2019-09-12 | 2020-07-03 | BACK INCIDENCE IMAGING ELEMENT |
TW109129530A TW202125791A (zh) | 2019-09-12 | 2020-08-28 | 背面入射型攝像元件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019166268A JP2021044439A (ja) | 2019-09-12 | 2019-09-12 | 裏面入射型撮像素子 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2024083910A Division JP2024100945A (ja) | 2024-05-23 | 裏面入射型撮像素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2021044439A true JP2021044439A (ja) | 2021-03-18 |
Family
ID=74864346
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019166268A Pending JP2021044439A (ja) | 2019-09-12 | 2019-09-12 | 裏面入射型撮像素子 |
Country Status (7)
Country | Link |
---|---|
US (1) | US11862659B2 (ja) |
EP (1) | EP3955302A4 (ja) |
JP (1) | JP2021044439A (ja) |
KR (1) | KR20220059440A (ja) |
CN (1) | CN114402584B (ja) |
TW (1) | TW202125791A (ja) |
WO (1) | WO2021049140A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023162407A1 (ja) * | 2022-02-24 | 2023-08-31 | 浜松ホトニクス株式会社 | 固体撮像素子 |
WO2023162408A1 (ja) * | 2022-02-24 | 2023-08-31 | 浜松ホトニクス株式会社 | 固体撮像素子、及び固体撮像素子の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10125884A (ja) * | 1996-10-18 | 1998-05-15 | Hamamatsu Photonics Kk | 半導体エネルギー検出器 |
JPH10125885A (ja) * | 1996-10-18 | 1998-05-15 | Hamamatsu Photonics Kk | 半導体エネルギー検出器 |
JP2004064410A (ja) * | 2002-07-29 | 2004-02-26 | Fuji Film Microdevices Co Ltd | 固体撮像素子 |
WO2004047178A1 (ja) * | 2002-11-18 | 2004-06-03 | Hamamatsu Photonics K.K. | 裏面入射型ホトダイオードアレイ、その製造方法及び半導体装置 |
Family Cites Families (9)
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CN100463205C (zh) * | 2005-09-05 | 2009-02-18 | 株式会社东芝 | 固体摄像装置及其制造方法 |
TWI420662B (zh) * | 2009-12-25 | 2013-12-21 | Sony Corp | 半導體元件及其製造方法,及電子裝置 |
KR101745638B1 (ko) * | 2011-01-12 | 2017-06-09 | 삼성전자 주식회사 | 광대역 갭 물질층 기반의 포토 다이오드 소자, 및 그 포토 다이오드 소자를 포함하는, 후면 조명 씨모스 이미지 센서 및 태양 전지 |
US9269730B2 (en) * | 2012-02-09 | 2016-02-23 | Semiconductor Components Industries, Llc | Imaging systems with backside isolation trenches |
US8835211B1 (en) * | 2013-05-24 | 2014-09-16 | Omnivision Technologies, Inc. | Image sensor pixel cell with global shutter having narrow spacing between gates |
US9748294B2 (en) * | 2014-01-10 | 2017-08-29 | Hamamatsu Photonics K.K. | Anti-reflection layer for back-illuminated sensor |
US9484370B2 (en) * | 2014-10-27 | 2016-11-01 | Omnivision Technologies, Inc. | Isolated global shutter pixel storage structure |
JP6803137B2 (ja) * | 2015-09-30 | 2020-12-23 | 浜松ホトニクス株式会社 | 裏面入射型固体撮像素子 |
KR102083235B1 (ko) * | 2019-03-27 | 2020-03-02 | 삼성전자 주식회사 | 이미지 센서 |
-
2019
- 2019-09-12 JP JP2019166268A patent/JP2021044439A/ja active Pending
-
2020
- 2020-07-03 KR KR1020217038351A patent/KR20220059440A/ko unknown
- 2020-07-03 CN CN202080063858.6A patent/CN114402584B/zh active Active
- 2020-07-03 US US17/608,212 patent/US11862659B2/en active Active
- 2020-07-03 EP EP20863594.6A patent/EP3955302A4/en active Pending
- 2020-07-03 WO PCT/JP2020/026253 patent/WO2021049140A1/ja unknown
- 2020-08-28 TW TW109129530A patent/TW202125791A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10125884A (ja) * | 1996-10-18 | 1998-05-15 | Hamamatsu Photonics Kk | 半導体エネルギー検出器 |
JPH10125885A (ja) * | 1996-10-18 | 1998-05-15 | Hamamatsu Photonics Kk | 半導体エネルギー検出器 |
JP2004064410A (ja) * | 2002-07-29 | 2004-02-26 | Fuji Film Microdevices Co Ltd | 固体撮像素子 |
WO2004047178A1 (ja) * | 2002-11-18 | 2004-06-03 | Hamamatsu Photonics K.K. | 裏面入射型ホトダイオードアレイ、その製造方法及び半導体装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023162407A1 (ja) * | 2022-02-24 | 2023-08-31 | 浜松ホトニクス株式会社 | 固体撮像素子 |
WO2023162408A1 (ja) * | 2022-02-24 | 2023-08-31 | 浜松ホトニクス株式会社 | 固体撮像素子、及び固体撮像素子の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP3955302A4 (en) | 2023-02-08 |
EP3955302A1 (en) | 2022-02-16 |
KR20220059440A (ko) | 2022-05-10 |
CN114402584B (zh) | 2024-07-05 |
US11862659B2 (en) | 2024-01-02 |
CN114402584A (zh) | 2022-04-26 |
WO2021049140A1 (ja) | 2021-03-18 |
US20220208809A1 (en) | 2022-06-30 |
TW202125791A (zh) | 2021-07-01 |
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