JP2021014614A - 基板処理方法及び基板処理装置 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 28
- 239000007789 gas Substances 0.000 claims abstract description 234
- 239000002994 raw material Substances 0.000 claims abstract description 67
- 239000012159 carrier gas Substances 0.000 claims abstract description 65
- 230000007246 mechanism Effects 0.000 claims abstract description 26
- 238000012545 processing Methods 0.000 claims description 82
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- 235000012431 wafers Nutrition 0.000 description 30
- 238000010926 purge Methods 0.000 description 25
- 239000002243 precursor Substances 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 10
- 238000003860 storage Methods 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
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- 239000007787 solid Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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- 239000004065 semiconductor Substances 0.000 description 3
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- 239000010703 silicon Substances 0.000 description 3
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
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- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F3/00—Measuring the volume flow of fluids or fluent solid material wherein the fluid passes through the meter in successive and more or less isolated quantities, the meter being driven by the flow
- G01F3/02—Measuring the volume flow of fluids or fluent solid material wherein the fluid passes through the meter in successive and more or less isolated quantities, the meter being driven by the flow with measuring chambers which expand or contract during measurement
- G01F3/20—Measuring the volume flow of fluids or fluent solid material wherein the fluid passes through the meter in successive and more or less isolated quantities, the meter being driven by the flow with measuring chambers which expand or contract during measurement having flexible movable walls, e.g. diaphragms, bellows
- G01F3/22—Measuring the volume flow of fluids or fluent solid material wherein the fluid passes through the meter in successive and more or less isolated quantities, the meter being driven by the flow with measuring chambers which expand or contract during measurement having flexible movable walls, e.g. diaphragms, bellows for gases
- G01F3/222—Measuring the volume flow of fluids or fluent solid material wherein the fluid passes through the meter in successive and more or less isolated quantities, the meter being driven by the flow with measuring chambers which expand or contract during measurement having flexible movable walls, e.g. diaphragms, bellows for gases characterised by drive mechanism for valves or membrane index mechanism
- G01F3/223—Measuring the volume flow of fluids or fluent solid material wherein the fluid passes through the meter in successive and more or less isolated quantities, the meter being driven by the flow with measuring chambers which expand or contract during measurement having flexible movable walls, e.g. diaphragms, bellows for gases characterised by drive mechanism for valves or membrane index mechanism with adjustment of stroke or timing; Calibration thereof; Testing
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F9/00—Measuring volume flow relative to another variable, e.g. of liquid fuel for an engine
- G01F9/001—Measuring volume flow relative to another variable, e.g. of liquid fuel for an engine with electric, electro-mechanic or electronic means
- G01F9/005—Measuring volume flow relative to another variable, e.g. of liquid fuel for an engine with electric, electro-mechanic or electronic means by using calibrated reservoirs
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- Organic Chemistry (AREA)
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- Fluid Mechanics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
図1は、本実施形態に係る成膜装置(基板処理装置)の一例を示す概略断面図である。本実施形態に係る成膜装置は、原子層堆積(ALD:Atomic Layer Deposition)法による成膜、及び化学的気相成長(CVD:Chemical Vapor Deposition)法による成膜が実施可能な装置として構成されている。
1 処理容器
5 処理ガス供給機構(ガス供給機構)
6 制御部
51 WCl6ガス供給機構(ガス供給機構)
73 開閉バルブ
91 成膜原料タンク(原料容器)
91a ヒータ
92 キャリアガス配管
93 キャリアN2ガス供給源
94 マスフローコントローラ
95a,95b,96a,96b 開閉バルブ
97 流量計
98 バイパス配管
99 開閉バルブ
Claims (6)
- 原料容器内の原料を気化させて、キャリアガスと共に原料ガスを供給するガス供給機構を備える基板処理装置の基板処理方法であって、
前記キャリアガスの流量と前記原料ガスの流量との関係式を校正する工程と、
前記関係式に基づいて前記キャリアガスの流量を制御し、処理容器内に前記原料ガスを供給して、前記処理容器内の基板に処理を施す工程と、を有し、
前記関係式を校正する工程は、
前記キャリアガスを連続的に流して前記関係式を導出する、
基板処理方法。 - 前記関係式を校正する工程は、
前記キャリアガスの流量を大流量から小流量へと変化させる、
請求項1に記載の基板処理方法。 - 前記関係式を校正する工程は、
前記キャリアガスを前記原料容器内に供給して、前記キャリアガス及び前記原料ガスのの流量を検出する工程と、
前記原料容器をバイパスして、前記キャリアガスの流量を検出する工程と、を有する、
請求項1または請求項2に記載の基板処理方法。 - 前記関係式を校正する工程は、
先に、前記キャリアガスを前記原料容器内に供給して、前記キャリアガス及び前記原料ガスの流量を検出する工程を行い、
後に、前記原料容器をバイパスして、前記キャリアガスの流量を検出する工程を行う、
請求項3に記載の基板処理方法。 - 所定のトリガ条件を満たすと、前記キャリアガスと前記原料ガスとの前記関係式を再び校正する工程を更に有する、
請求項1乃至請求項4のいずれか1項に記載の基板処理方法。 - 処理容器と、
前記処理容器内に配置され、基板を載置する載置台と、
原料容器内の原料を気化させて、キャリアガスと共に原料ガスを供給するガス供給機構と、
制御部と、を備え、
前記制御部は、
前記キャリアガスの流量と前記原料ガスの流量との関係式を校正する工程と、
前記関係式に基づいて前記キャリアガスの流量を制御し、前記処理容器内に前記原料ガスを供給して、前記基板に処理を施す工程と、を実行し、
前記関係式を校正する工程は、
前記キャリアガスを連続的に流して前記関係式を導出する、
基板処理装置。
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JP2016040402A (ja) * | 2014-08-12 | 2016-03-24 | 東京エレクトロン株式会社 | 原料ガス供給装置 |
JP2017066511A (ja) * | 2015-09-30 | 2017-04-06 | 東京エレクトロン株式会社 | 原料ガス供給装置、原料ガス供給方法及び記憶媒体 |
JP2019104974A (ja) * | 2017-12-13 | 2019-06-27 | 東京エレクトロン株式会社 | 基板処理方法、記憶媒体及び原料ガス供給装置 |
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JP6877188B2 (ja) | 2017-03-02 | 2021-05-26 | 東京エレクトロン株式会社 | ガス供給装置、ガス供給方法及び成膜方法 |
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JP2016040402A (ja) * | 2014-08-12 | 2016-03-24 | 東京エレクトロン株式会社 | 原料ガス供給装置 |
JP2017066511A (ja) * | 2015-09-30 | 2017-04-06 | 東京エレクトロン株式会社 | 原料ガス供給装置、原料ガス供給方法及び記憶媒体 |
JP2019104974A (ja) * | 2017-12-13 | 2019-06-27 | 東京エレクトロン株式会社 | 基板処理方法、記憶媒体及び原料ガス供給装置 |
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US20210010130A1 (en) | 2021-01-14 |
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