JP2021002606A - ウェーハの再生方法 - Google Patents
ウェーハの再生方法 Download PDFInfo
- Publication number
- JP2021002606A JP2021002606A JP2019116109A JP2019116109A JP2021002606A JP 2021002606 A JP2021002606 A JP 2021002606A JP 2019116109 A JP2019116109 A JP 2019116109A JP 2019116109 A JP2019116109 A JP 2019116109A JP 2021002606 A JP2021002606 A JP 2021002606A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- polishing
- surface side
- polishing liquid
- silicon compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000011069 regeneration method Methods 0.000 title abstract description 12
- 238000005498 polishing Methods 0.000 claims abstract description 185
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 29
- 230000002378 acidificating effect Effects 0.000 claims abstract description 21
- 230000001172 regenerating effect Effects 0.000 claims abstract description 11
- 239000007788 liquid Substances 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 27
- 235000012431 wafers Nutrition 0.000 description 156
- 239000010408 film Substances 0.000 description 36
- 230000007246 mechanism Effects 0.000 description 33
- 239000010409 thin film Substances 0.000 description 15
- 239000010410 layer Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 238000004140 cleaning Methods 0.000 description 10
- 238000005488 sandblasting Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- -1 SiCN Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 230000007723 transport mechanism Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
11a 表面(第1面)
11b 裏面(第2面)
13 テープ
2 研磨装置
4 基台
4a,4b 開口
6a,6b カセット載置台
8a,8b カセット
10 第1搬送機構
12 操作パネル
14 位置調整機構
16 第2搬送機構(ローディングアーム)
18 X軸移動機構
20 防塵防滴カバー
22 移動テーブル
24 チャックテーブル(保持テーブル)
24a 保持面
24b 吸引路
26 支持構造
28 Z軸移動機構
30 Z軸ガイドレール
32 Z軸移動プレート
34 Z軸ボールネジ
36 Z軸パルスモータ
38 支持具
40 研磨ユニット(研磨手段)
42 ハウジング
44 スピンドル
46 マウント
48 研磨パッド
50 ボルト
52 研磨液供給路
54a,54b バルブ
56a 第1研磨液供給源(酸性研磨液供給源)
56b 第2研磨液供給源(アルカリ性研磨液供給源)
58 第3搬送機構(アンローディングアーム)
60 洗浄機構(洗浄手段)
70 基台
72 研磨層
72a 研磨面
Claims (1)
- 第1面及び第2面を備え、該第1面側に珪素化合物でなる膜が形成されたウェーハの再生方法であって、
研磨装置のチャックテーブルによって、該ウェーハを、該第1面側が露出し該第2面側が該チャックテーブルの保持面と対向するように保持する保持工程と、
該ウェーハの該第1面側に酸性研磨液を供給しながら、該ウェーハの該第1面側を該研磨装置に装着された研磨パッドで研磨して、該膜を除去する除去工程と、
該ウェーハの該第1面側にアルカリ性研磨液を供給しながら、該膜が除去された該ウェーハの該第1面側を該研磨パッドで研磨する研磨工程と、を備えることを特徴とするウェーハの再生方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019116109A JP7345966B2 (ja) | 2019-06-24 | 2019-06-24 | ウェーハの再生方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019116109A JP7345966B2 (ja) | 2019-06-24 | 2019-06-24 | ウェーハの再生方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021002606A true JP2021002606A (ja) | 2021-01-07 |
JP7345966B2 JP7345966B2 (ja) | 2023-09-19 |
Family
ID=73995135
Family Applications (1)
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---|---|---|---|
JP2019116109A Active JP7345966B2 (ja) | 2019-06-24 | 2019-06-24 | ウェーハの再生方法 |
Country Status (1)
Country | Link |
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JP (1) | JP7345966B2 (ja) |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4944836A (en) * | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
US5209816A (en) * | 1992-06-04 | 1993-05-11 | Micron Technology, Inc. | Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing |
JP2000269174A (ja) * | 1999-03-17 | 2000-09-29 | Disco Abrasive Syst Ltd | 半導体ウェーハの再生方法 |
JP2001237201A (ja) * | 2000-02-23 | 2001-08-31 | Fuji Seisakusho:Kk | シリコンウエハーの再生方法 |
JP2006324639A (ja) * | 2005-05-16 | 2006-11-30 | Kobe Steel Ltd | 研磨スラリーおよびウエハ再生方法 |
JP2007049145A (ja) * | 2005-08-08 | 2007-02-22 | Samsung Electronics Co Ltd | 絶縁材料除去用組成物、ならびにこれを用いた絶縁膜の除去方法および基板の再生方法 |
US20070087580A1 (en) * | 2005-10-17 | 2007-04-19 | Dong-Min Kang | Composition for removing an insulation material, method of removing an insulation layer and method of recycling a substrate using the same |
JP2007317682A (ja) * | 2006-05-23 | 2007-12-06 | Renesas Technology Corp | 半導体装置の製造方法 |
WO2012073317A1 (ja) * | 2010-11-30 | 2012-06-07 | 株式会社エフエーサービス | 再生半導体ウエハの製造方法 |
JP2013128047A (ja) * | 2011-12-19 | 2013-06-27 | Semiconductor Energy Lab Co Ltd | 半導体基板の再生方法、再生半導体基板の作製方法、及びsoi基板の作製方法 |
JP2014225554A (ja) * | 2013-05-16 | 2014-12-04 | 株式会社新菱 | 再生基板の製造方法 |
JP2015090945A (ja) * | 2013-11-07 | 2015-05-11 | 株式会社岡本工作機械製作所 | 再生半導体ウエハの製造方法 |
WO2017138308A1 (ja) * | 2016-02-09 | 2017-08-17 | 三井金属鉱業株式会社 | 研摩スラリー及び研摩材 |
US20190115205A1 (en) * | 2017-10-18 | 2019-04-18 | Globalwafers Co., Ltd. | Silicon carbide wafer and method for production thereof |
-
2019
- 2019-06-24 JP JP2019116109A patent/JP7345966B2/ja active Active
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4944836A (en) * | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
US5209816A (en) * | 1992-06-04 | 1993-05-11 | Micron Technology, Inc. | Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing |
JP2000269174A (ja) * | 1999-03-17 | 2000-09-29 | Disco Abrasive Syst Ltd | 半導体ウェーハの再生方法 |
JP2001237201A (ja) * | 2000-02-23 | 2001-08-31 | Fuji Seisakusho:Kk | シリコンウエハーの再生方法 |
JP2006324639A (ja) * | 2005-05-16 | 2006-11-30 | Kobe Steel Ltd | 研磨スラリーおよびウエハ再生方法 |
JP2007049145A (ja) * | 2005-08-08 | 2007-02-22 | Samsung Electronics Co Ltd | 絶縁材料除去用組成物、ならびにこれを用いた絶縁膜の除去方法および基板の再生方法 |
US20070087580A1 (en) * | 2005-10-17 | 2007-04-19 | Dong-Min Kang | Composition for removing an insulation material, method of removing an insulation layer and method of recycling a substrate using the same |
JP2007317682A (ja) * | 2006-05-23 | 2007-12-06 | Renesas Technology Corp | 半導体装置の製造方法 |
WO2012073317A1 (ja) * | 2010-11-30 | 2012-06-07 | 株式会社エフエーサービス | 再生半導体ウエハの製造方法 |
JP2013128047A (ja) * | 2011-12-19 | 2013-06-27 | Semiconductor Energy Lab Co Ltd | 半導体基板の再生方法、再生半導体基板の作製方法、及びsoi基板の作製方法 |
JP2014225554A (ja) * | 2013-05-16 | 2014-12-04 | 株式会社新菱 | 再生基板の製造方法 |
JP2015090945A (ja) * | 2013-11-07 | 2015-05-11 | 株式会社岡本工作機械製作所 | 再生半導体ウエハの製造方法 |
WO2017138308A1 (ja) * | 2016-02-09 | 2017-08-17 | 三井金属鉱業株式会社 | 研摩スラリー及び研摩材 |
US20190115205A1 (en) * | 2017-10-18 | 2019-04-18 | Globalwafers Co., Ltd. | Silicon carbide wafer and method for production thereof |
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JP7345966B2 (ja) | 2023-09-19 |
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