JP2020535635A - 発光素子及びそれを有する表示装置 - Google Patents
発光素子及びそれを有する表示装置 Download PDFInfo
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- JP2020535635A JP2020535635A JP2020515261A JP2020515261A JP2020535635A JP 2020535635 A JP2020535635 A JP 2020535635A JP 2020515261 A JP2020515261 A JP 2020515261A JP 2020515261 A JP2020515261 A JP 2020515261A JP 2020535635 A JP2020535635 A JP 2020535635A
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- light emitting
- emitting cell
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- wavelength converter
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- 239000004065 semiconductor Substances 0.000 claims abstract description 124
- 239000000758 substrate Substances 0.000 claims description 91
- 238000005192 partition Methods 0.000 claims description 88
- 238000006243 chemical reaction Methods 0.000 claims description 23
- 238000010586 diagram Methods 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 334
- 229910052751 metal Inorganic materials 0.000 description 33
- 239000002184 metal Substances 0.000 description 33
- -1 polyethylene Polymers 0.000 description 22
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- 239000010408 film Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 13
- 239000011241 protective layer Substances 0.000 description 13
- 239000000203 mixture Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 10
- 239000010931 gold Substances 0.000 description 10
- 238000002156 mixing Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 9
- 229910002601 GaN Inorganic materials 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 239000004205 dimethyl polysiloxane Substances 0.000 description 7
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 7
- 229920000139 polyethylene terephthalate Polymers 0.000 description 7
- 239000005020 polyethylene terephthalate Substances 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 238000003860 storage Methods 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229920000620 organic polymer Polymers 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910005540 GaP Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N vinyl-ethylene Natural products C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical group [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- 239000004640 Melamine resin Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000113 methacrylic resin Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 2
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000016 photochemical curing Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910005887 NiSn Inorganic materials 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 1
- 229920000412 polyarylene Polymers 0.000 description 1
- 229920001748 polybutylene Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Microelectronics & Electronic Packaging (AREA)
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- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Led Device Packages (AREA)
Abstract
Description
系半導体、例えば、(Al、Ga、In)Nのような窒化物系半導体から形成されることができる。n型半導体層1110、活性層1112及びp型半導体層1114は金属有機化学気相成長法(MOCVD)のような公知の方法を利用して形成されてもよい。また、n型半導体層1110はn型不純物(例えば、Si、Ge、Sn)を含み、p型半導体層1114はp型不純物(例えば、Mg、Sr、Ba)を含む。一実施形態で、n型半導体層1110はドーパントとしてSiを含むGaN又はAlGaNを含むことができ、p型半導体層1114はドーパントとしてMgを含むGaN又はAlGaNを含むことができる。
Claims (25)
- 各々第1導電形半導体層、活性層、及び第2導電形半導体層を含む第1発光セル、第2発光セル、及び第3発光セルと、
前記第1乃至第3発光セルを独立的に駆動できるように前記第1乃至第3発光セルに電気的に接続されたパッドと、
前記第2発光セルで放出された光の波長を変換する第2波長変換器と、
前記第3発光セルで放出された光の波長を変換する第3波長変換器と、を含み、前記第3波長変換器は、前記第2波長変換器より長い波長に光の波長を変換し、
前記第2発光セルは、前記第1発光セルより大きい面積を有し、
前記第3発光セルは、前記第2発光セルより大きい面積を有する発光素子。 - 前記第1乃至第3発光セルは、青色光を放出し、
前記第2波長変換器は、前記青色光を緑色光に変換し、
前記第3波長変換器は、前記青色光を赤色光に変換する請求項1に記載の発光素子。 - 前記第1発光セルに対する第2発光セル及び第3発光セルの面積比は、各々前記第2波長変換器の光変換効率及び前記第3波長変換器の光変換効率に反比例する請求項2に記載の発光素子。
- 前記第1発光セルで放出された光の波長を第1波長の光に変換する第1波長変換器をさらに含み、前記第1波長変換器は、前記第2波長変換器よりさらに短波長に光の波長を変換し、
前記第1乃至第3発光セルは、紫外線を放出する請求項1に記載の発光素子。 - 前記第1波長変換器は、紫外線を青色光に変換し、
前記第2波長変換器は、前記紫外線を緑色光に変換し、
前記第3波長変換器は、前記紫外線を赤色光に変換する請求項4に記載の発光素子。 - 前記第1発光セルに対する第2発光セル及び第3発光セルの面積比は、各々前記第1波長変換器に対する前記第2波長変換器の光変換効率比及び前記第3波長変換器の光変換効率比に反比例する請求項5に記載の発光素子。
- 前記第1波長変換器上に配置された第1カラーフィルターと、
前記第2波長変換器上に配置された第2カラーフィルターと、
前記第3波長変換器上に配置された第3カラーフィルターと、をさらに含む請求項4に記載の発光素子。 - 前記第2波長変換器上に配置された第2カラーフィルターと、
前記第3波長変換器上に配置された第3カラーフィルターと、をさらに含む請求項1に記載の発光素子。 - 前記第1乃至第3発光セルが配置された基板をさらに含む請求項1に記載の発光素子。
- 前記第1発光セル乃至前記第3発光セルの間の各々に提供され、前記光を遮蔽する隔壁を含み、
前記第1発光セル乃至前記第3発光セルの高さは、前記隔壁の高さより低く、
前記隔壁と前記第1発光セル乃至前記第3発光セルとの間の距離は、10μm乃至20μm以下である請求項1に記載の発光素子。 - 前記第1発光セル乃至前記第3発光セルの間に提供された前記隔壁は、互いに接続された一体である請求項10に記載の発光素子。
- 前記隔壁の幅は、前記基板から遠くなるにつれ、増加する請求項10に記載の発光素子。
- 前記基板の平面上の面積の中で前記隔壁が占める面積の比は、0.5乃至0.99である請求項10に記載の発光素子。
- 前記隔壁の高さは、15μm乃至115μmである請求項10に記載の発光素子。
- 前記第1発光セルは、赤色光を出射し、前記第2発光セルは、緑色光を出射し、前記第3発光セルは、青色光を出射し、
前記第1発光セルと前記第2発光セルとの間の距離は、前記第1発光セルと前記第3発光セルとの間の距離と同一である請求項9に記載の発光素子。 - 前記第1発光セルと前記第2発光セルとの間の距離は、前記第2発光セルと前記第3発光セルとの間の距離と異なる請求項15に記載の発光素子。
- 前記第1発光セル乃至前記第3発光セルは、1つの発光素子内に提供され、
一画素に提供された前記第1発光セル乃至前記第3発光セル間の距離は、前記一画素に提供された前記第1発光セル乃至前記第3発光セルと前記一画素と隣接する画素に提供された第1発光セル乃至第3発光セルとの間の距離より短い請求項16に記載の発光素子。 - 前記第1発光セル乃至前記第3発光セルは、三角形状に配置される請求項9に記載の発光素子。
- 前記第1発光セル乃至前記第3発光セルは、一字形状に配置される請求項9に記載の発光素子。
- 前記第1乃至第3発光セルは、第1導電形半導体層を共有する請求項9に記載の発光素子。
- 前記パッドの中で前記共有された第1導電形半導体層に電気的に接続されたパッドから延長する延長部をさらに含む請求項20に記載の発光素子。
- 前記第2波長変換器と前記第3波長変換器は、同一フィルム内に位置する請求項1に記載の発光素子。
- 前記第2波長変換器と前記第3波長変換器は、積層フィルム内に位置し、
前記第2波長変換器と前記第3波長変換器は、互いに異なる層内に位置する請求項1に記載の発光素子。 - 基板と、
前記基板上に提供され、赤色光、緑色光、及び青色光を出射する第1発光セル、第2発光セル、及び第3発光セルと、
前記第1発光セル乃至前記第3発光セルの間の各々に提供され、前記光を遮蔽する隔壁を含み、
前記第1発光セル乃至前記第3発光セルの高さは、前記隔壁の高さより低く、
前記隔壁と前記第1発光セル乃至前記第3発光セルの間の距離は、5μm以下である発光素子。 - 回路基板と、
前記回路基板上に配列された複数の画素と、を含み、
前記複数の画素の各々は、請求項1乃至請求項24のいずれか一項の発光素子である表示装置。
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EP3690944A4 (en) | 2021-06-16 |
JP2024014952A (ja) | 2024-02-01 |
US20200279979A1 (en) | 2020-09-03 |
US11641008B2 (en) | 2023-05-02 |
BR112020005890A2 (pt) | 2020-09-29 |
CN111162099A (zh) | 2020-05-15 |
KR20190038365A (ko) | 2019-04-08 |
KR102650950B1 (ko) | 2024-03-26 |
US11824145B2 (en) | 2023-11-21 |
JP7389021B2 (ja) | 2023-11-29 |
US20240079534A1 (en) | 2024-03-07 |
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JP2022003413A (ja) | 2022-01-11 |
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JP7282138B2 (ja) | 2023-05-26 |
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