JP2020534688A - シリコン含有膜堆積用の組成物及び方法 - Google Patents
シリコン含有膜堆積用の組成物及び方法 Download PDFInfo
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- JP2020534688A JP2020534688A JP2020515256A JP2020515256A JP2020534688A JP 2020534688 A JP2020534688 A JP 2020534688A JP 2020515256 A JP2020515256 A JP 2020515256A JP 2020515256 A JP2020515256 A JP 2020515256A JP 2020534688 A JP2020534688 A JP 2020534688A
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- Prior art keywords
- plasma
- disilacyclobutane
- tert
- bis
- trisilacyclohexane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000034 method Methods 0.000 title claims abstract description 136
- 239000000203 mixture Substances 0.000 title claims abstract description 42
- 239000012528 membrane Substances 0.000 title claims description 36
- 239000002243 precursor Substances 0.000 claims abstract description 121
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 150000001875 compounds Chemical class 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 44
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 33
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 84
- 229910052739 hydrogen Inorganic materials 0.000 claims description 63
- 239000001257 hydrogen Substances 0.000 claims description 61
- 239000007789 gas Substances 0.000 claims description 53
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 50
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 50
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 48
- 229910052757 nitrogen Inorganic materials 0.000 claims description 45
- 238000000151 deposition Methods 0.000 claims description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 42
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 40
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 40
- 238000006243 chemical reaction Methods 0.000 claims description 38
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 37
- 125000000217 alkyl group Chemical group 0.000 claims description 36
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 35
- -1 1,1,3,3,5,5-hexaacetylenyl-1,3 , 5-Trisilacyclohexane 1,3-dicyclopropyl-1,3-disilacyclobutane Chemical compound 0.000 claims description 27
- 239000012530 fluid Substances 0.000 claims description 27
- 125000004122 cyclic group Chemical group 0.000 claims description 26
- 238000010926 purge Methods 0.000 claims description 26
- 229910052786 argon Inorganic materials 0.000 claims description 24
- 230000008021 deposition Effects 0.000 claims description 24
- 239000007788 liquid Substances 0.000 claims description 23
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 22
- 150000002431 hydrogen Chemical class 0.000 claims description 21
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims description 20
- 229910021529 ammonia Inorganic materials 0.000 claims description 20
- 239000011261 inert gas Substances 0.000 claims description 18
- 125000003342 alkenyl group Chemical group 0.000 claims description 16
- 125000000304 alkynyl group Chemical group 0.000 claims description 16
- 238000000231 atomic layer deposition Methods 0.000 claims description 16
- 229910052734 helium Inorganic materials 0.000 claims description 16
- 239000001307 helium Substances 0.000 claims description 16
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 125000000882 C2-C6 alkenyl group Chemical group 0.000 claims description 12
- 238000005137 deposition process Methods 0.000 claims description 12
- 229910052754 neon Inorganic materials 0.000 claims description 11
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 8
- 150000004820 halides Chemical class 0.000 claims description 8
- 238000011065 in-situ storage Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 241001493498 Ipomoea jalapa Species 0.000 claims description 7
- WHPPXMTXFFHEBJ-UHFFFAOYSA-N 1,1,3,3-tetrakis(ethenyl)-1,3-disiletane Chemical compound C=C[Si]1(C=C)C[Si](C=C)(C=C)C1 WHPPXMTXFFHEBJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 6
- SIEGHFALOWOQNT-UHFFFAOYSA-N 1,3-bis(ethenyl)-1,3-dimethyl-1,3-disiletane Chemical compound C=C[Si]1(C)C[Si](C)(C=C)C1 SIEGHFALOWOQNT-UHFFFAOYSA-N 0.000 claims description 5
- BHUYEPIQQWMWJN-UHFFFAOYSA-N 1,3-dicyclopropyl-1,3-dimethyl-1,3-disiletane Chemical compound C1(CC1)[Si]1(C[Si](C1)(C)C1CC1)C BHUYEPIQQWMWJN-UHFFFAOYSA-N 0.000 claims description 5
- 229910021645 metal ion Inorganic materials 0.000 claims description 5
- ZJGQKHKFVOCNPO-UHFFFAOYSA-N 1,1,3,3,5,5-hexakis(ethenyl)-1,3,5-trisilinane Chemical compound C=C[Si]1(C=C)C[Si](C=C)(C=C)C[Si](C=C)(C=C)C1 ZJGQKHKFVOCNPO-UHFFFAOYSA-N 0.000 claims description 4
- ZNGBCTRHIOTQJV-UHFFFAOYSA-N 1,1,3,3-tetraethynyl-1,3-disiletane Chemical compound C(#C)[Si]1(C[Si](C1)(C#C)C#C)C#C ZNGBCTRHIOTQJV-UHFFFAOYSA-N 0.000 claims description 4
- XQTQGKSKOTXWNX-UHFFFAOYSA-N 1,1,3,3-tetrakis(prop-2-enyl)-1,3-disiletane Chemical compound C=CC[Si]1(CC=C)C[Si](CC=C)(CC=C)C1 XQTQGKSKOTXWNX-UHFFFAOYSA-N 0.000 claims description 4
- LISDBLOKKWTHNH-UHFFFAOYSA-N 1,3,5-Trisilacyclohexan Natural products C1[SiH2]C[SiH2]C[SiH2]1 LISDBLOKKWTHNH-UHFFFAOYSA-N 0.000 claims description 4
- AKMQHEUEHLMWCI-UHFFFAOYSA-N 1,3,5-tris(ethenyl)-1,3,5-trimethyl-1,3,5-trisilinane Chemical compound C(=C)[Si]1(C[Si](C[Si](C1)(C)C=C)(C)C=C)C AKMQHEUEHLMWCI-UHFFFAOYSA-N 0.000 claims description 4
- APDFTOZTZIJIPJ-UHFFFAOYSA-N 1,3,5-tris(ethenyl)-1,3,5-trisilinane Chemical compound C(=C)[SiH]1C[SiH](C[SiH](C1)C=C)C=C APDFTOZTZIJIPJ-UHFFFAOYSA-N 0.000 claims description 4
- LQKDMAUOVCHJCE-UHFFFAOYSA-N 1,3-bis(ethenyl)-1,3-disiletane Chemical group C(=C)[SiH]1C[SiH](C1)C=C LQKDMAUOVCHJCE-UHFFFAOYSA-N 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 4
- 150000001924 cycloalkanes Chemical class 0.000 claims description 3
- 230000009977 dual effect Effects 0.000 claims description 3
- 238000001179 sorption measurement Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229920002554 vinyl polymer Polymers 0.000 claims description 2
- NUXSBSMAAMFXKV-UHFFFAOYSA-N 1,1,3,3-tetracyclopropyl-1,3-disiletane Chemical compound C1(CC1)[Si]1(C[Si](C1)(C1CC1)C1CC1)C1CC1 NUXSBSMAAMFXKV-UHFFFAOYSA-N 0.000 claims 4
- MGQMWPDOIFVICY-UHFFFAOYSA-N 1,3-dicyclopropyl-1,3-disiletane Chemical compound C1(CC1)[SiH]1C[SiH](C1)C1CC1 MGQMWPDOIFVICY-UHFFFAOYSA-N 0.000 claims 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 3
- 238000007740 vapor deposition Methods 0.000 claims 3
- 238000005019 vapor deposition process Methods 0.000 claims 2
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 description 124
- 239000010408 film Substances 0.000 description 94
- 230000008569 process Effects 0.000 description 49
- 239000010410 layer Substances 0.000 description 18
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 18
- 239000002904 solvent Substances 0.000 description 17
- 238000009835 boiling Methods 0.000 description 12
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 12
- 229930195733 hydrocarbon Natural products 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 239000006227 byproduct Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 8
- 239000003153 chemical reaction reagent Substances 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 8
- 238000004255 ion exchange chromatography Methods 0.000 description 8
- 238000011282 treatment Methods 0.000 description 8
- 125000003118 aryl group Chemical group 0.000 description 7
- 125000004432 carbon atom Chemical group C* 0.000 description 7
- 150000002430 hydrocarbons Chemical group 0.000 description 7
- 150000003254 radicals Chemical class 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 6
- 229910002091 carbon monoxide Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
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- 239000012495 reaction gas Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000012686 silicon precursor Substances 0.000 description 5
- 239000003381 stabilizer Substances 0.000 description 5
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 4
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- 125000000524 functional group Chemical group 0.000 description 4
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- 125000001424 substituent group Chemical group 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- NHBMXLXMVPLQAX-UHFFFAOYSA-N 1,3-disiletane Chemical compound C1[SiH2]C[SiH2]1 NHBMXLXMVPLQAX-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- 229910018540 Si C Inorganic materials 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 235000010354 butylated hydroxytoluene Nutrition 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 230000037361 pathway Effects 0.000 description 3
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 150000003512 tertiary amines Chemical class 0.000 description 3
- 125000001302 tertiary amino group Chemical group 0.000 description 3
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- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- WJFKNYWRSNBZNX-UHFFFAOYSA-N 10H-phenothiazine Chemical compound C1=CC=C2NC3=CC=CC=C3SC2=C1 WJFKNYWRSNBZNX-UHFFFAOYSA-N 0.000 description 2
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- 239000004215 Carbon black (E152) Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
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- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
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- 238000000560 X-ray reflectometry Methods 0.000 description 2
- LMVVLQVKKDFECD-UHFFFAOYSA-L [Cl-].[Mg+2].C(=C)Cl.[Cl-] Chemical compound [Cl-].[Mg+2].C(=C)Cl.[Cl-] LMVVLQVKKDFECD-UHFFFAOYSA-L 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
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- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 2
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- 150000001805 chlorine compounds Chemical group 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
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- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical compound C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 2
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- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 2
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- 229910052749 magnesium Inorganic materials 0.000 description 2
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
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- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
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- SYSHGEHAYJKOLC-UHFFFAOYSA-N 1,1,3,3-tetrachloro-1,3-disiletane Chemical compound Cl[Si]1(Cl)C[Si](Cl)(Cl)C1 SYSHGEHAYJKOLC-UHFFFAOYSA-N 0.000 description 1
- WCBPJVKVIMMEQC-UHFFFAOYSA-N 1,1-diphenyl-2-(2,4,6-trinitrophenyl)hydrazine Chemical group [O-][N+](=O)C1=CC([N+](=O)[O-])=CC([N+]([O-])=O)=C1NN(C=1C=CC=CC=1)C1=CC=CC=C1 WCBPJVKVIMMEQC-UHFFFAOYSA-N 0.000 description 1
- CTNZAPZZIAVMCI-UHFFFAOYSA-N 1,3-diethoxy-1,3-dimethyl-1,3-disiletane Chemical compound CCO[Si]1(C)C[Si](C)(OCC)C1 CTNZAPZZIAVMCI-UHFFFAOYSA-N 0.000 description 1
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- OPLCSTZDXXUYDU-UHFFFAOYSA-N 2,4-dimethyl-6-tert-butylphenol Chemical compound CC1=CC(C)=C(O)C(C(C)(C)C)=C1 OPLCSTZDXXUYDU-UHFFFAOYSA-N 0.000 description 1
- DKCPKDPYUFEZCP-UHFFFAOYSA-N 2,6-di-tert-butylphenol Chemical compound CC(C)(C)C1=CC=CC(C(C)(C)C)=C1O DKCPKDPYUFEZCP-UHFFFAOYSA-N 0.000 description 1
- GVNVAWHJIKLAGL-UHFFFAOYSA-N 2-(cyclohexen-1-yl)cyclohexan-1-one Chemical compound O=C1CCCCC1C1=CCCCC1 GVNVAWHJIKLAGL-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0803—Compounds with Si-C or Si-Si linkages
- C07F7/0805—Compounds with Si-C or Si-Si linkages comprising only Si, C or H atoms
- C07F7/0807—Compounds with Si-C or Si-Si linkages comprising only Si, C or H atoms comprising Si as a ring atom
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/36—Carbonitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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- C23C16/45523—Pulsed gas flow or change of composition over time
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Abstract
Description
ここで、R1は、水素、直鎖または分岐C1〜C10アルキル基、環状C3〜C10アルキル基、直鎖または分岐C2〜C10アルケニル基、および直鎖または分岐C2〜C10アルキニル基からなる群から選択され;R2は、直鎖または分岐C2〜C6アルケニル基、直鎖または分岐C2〜C6アルキニル基、および環状C3〜C10アルキル基からなる群から選択される。
ここで、R1は、水素、直鎖または分岐C1〜C10アルキル基、環状C3〜C10アルキル基、直鎖または分岐C2〜C10アルケニル基、および直鎖または分岐C2〜C10アルキニル基からなる群から選択され;R2は、直鎖または分岐C2〜C6アルケニル基、直鎖または分岐C2〜C6アルキニル基、および環状C3〜C10アルキル基からなる群から選択される前駆体;および(b)溶媒とを含む組成物が提供される。式Iの特定の実施形態では、R1およびR2はそれぞれ水素である。他の実施形態では、R1は水素である。本明細書に記載の組成物の特定の実施形態では、溶媒は、エーテル、第三級アミン、アルキル炭化水素、芳香族炭化水素、第三級アミノエーテル、およびそれらの組み合わせからなる群から選択される少なくとも1つである。特定の実施態様では、シラシクロアルカンの沸点と溶媒の沸点との差は40℃以下である。
a.反応器内に基板を提供する;
b.反応器に、式IAの構造で表される化合物および式IBの構造で表される化合物からなる群から選択される少なくとも1つのシラシクロアルカン前駆体を導入する:
ここで、R1は、水素、直鎖または分岐C1〜C10アルキル基、環状C3〜C10アルキル基、直鎖または分岐C2〜C10アルケニル基、および直鎖または分岐C2〜C10アルキニル基からなる群から選択され;R2は、直鎖または分岐C2〜C6アルケニル基、直鎖または分岐C2〜C6アルキニル基、および環状C3〜C10アルキル基からなる群から選択され、ここで、少なくとも1つのシラシクロアルカン前駆体は、基板の表面の少なくとも一部で反応して、化学吸着層を提供する;
c.パージガスで反応器をパージする;
d.プラズマ含有源を反応器に導入して化学吸着層の少なくとも一部と反応させ、約0.01〜約1.5W/cm2の範囲の出力密度でプラズマが生成される少なくとも1つの反応部位を提供する;
e.必要に応じて、反応器を不活性ガスでパージする;ここで、ステップbからeは、炭化ケイ素膜の所望の厚さが得られるまで繰り返される。
a.反応器内に基板を提供する;
b.反応器に、1,3−ジビニル−1,3−ジシラシクロブタン、1,3−ジビニル−1,3−ジメチル−1,3−ジシラシクロブタン、1,1,3,3−テトラビニル−1,3−ジシラシクロブタン、1,3,5−トリビニル−1,3,5−トリシラシクロヘキサン、1,3,5−トリビニル−1,3,5−トリメチル−1,3,5−トリシラシクロヘキサン、1,1,3,3,5,5−ヘキサビニル−1,3,5−トリシラシクロヘキサン、1,3−ジアリル−1,3−ジメチル−1,3−ジシラシクロブタン、1,1,3,3−テトラアリル−1,3−ジシラシクロブタン、1,3,5−トリアリル−1,3,5−トリシラシクロヘキサン、1,3,5−トリアリル−1,3,5−トリメチル−1,3,5−トリシラシクロヘキサン、1,1,3,3,5,5−ヘキサアリル−1,3,5−トリシラシクロヘキサン、1,3−ジアセチレニル−1,3−ジシラシクロブタン、1,3−ジアセチレニル−1,3−ジメチル−1,3−ジシラシクロブタン、1,1,3,3−テトラアセチレニル−1,3−ジシラシクロブタン、1,3,5−トリアセチレニル−1,3,5−トリシラシクロヘキサン、1,3,5−トリアセチレニル−1,3,5−トリメチル−1,3,5−トリシラシクロヘキサン、1,1,3,3,5,5−ヘキサアセチレニル−1,3,5−トリシラシクロヘキサン1,3−ジシクロプロピル−1,3−ジシラシクロブタン、1,3−ジシクロプロピル−1,3−ジメチル−1,3−ジシラシクロブタン、1,1,3,3−テトラシクロプロピル−1,3−ジシラシクロブタンおよびその組み合わせからなる群から選択される少なくとも1つのシラシクロアルカン前駆体を導入し、少なくとも1つのシラシクロアルカン前駆体は、基板の表面の少なくとも一部で反応して、化学吸着層を提供する;
c.窒素、希ガス、およびそれらの組み合わせから選択される少なくとも1つを含むパージガスで反応器をパージする;
d.プラズマ含有源を反応器に導入して、化学吸着層の少なくとも一部と反応し、約0.01〜約1.5W/cm2の範囲の出力密度でプラズマが生成される少なくとも1つの反応部位を提供する;
e.必要に応じて、反応器を不活性ガスでパージする;ここで、ステップbからeは、炭化ケイ素膜の所望の厚さが得られるまで繰り返される。
a.反応器内に基板を提供する;
b.反応器に、式IAの構造で表される化合物および式IBの構造で表される化合物からなる群から選択される少なくとも1つのシラシクロアルカン前駆体を導入する:
ここで、R1は、水素、直鎖または分岐C1〜C10アルキル基、環状C3〜C10アルキル基、直鎖または分岐C2〜C10アルケニル基、および直鎖または分岐C2〜C10アルキニル基からなる群から選択され;R2は、直鎖または分岐C2〜C6アルケニル基、直鎖または分岐C2〜C6アルキニル基、および環状C3〜C10アルキル基からなる群から選択され、ここで、少なくとも1つのシラシクロアルカン前駆体は、基板の表面の少なくとも一部で反応して、化学吸着層を提供する;
c.窒素、希ガス、およびそれらの組み合わせから選択される少なくとも1つを含むパージガスで反応器をパージする;
d.窒素含有プラズマ源を反応器に導入して化学吸着層の少なくとも一部と反応させ、約0.01〜約1.5W/cm2の範囲の出力密度でプラズマが生成される少なくとも1つの反応部位を提供する;
e.必要に応じて、反応器を不活性ガスでパージする;ここで、ステップbからeは、炭窒化ケイ素膜の所望の厚さが得られるまで繰り返される。
ここで、R1は、水素、直鎖または分岐C1〜C10アルキル基、環状C3〜C10アルキル基、直鎖または分岐C2〜C10アルケニル基、および直鎖または分岐C2〜C10アルキニル基からなる群から選択され;R2は、直鎖または分岐C2〜C6アルケニル基、直鎖または分岐C2〜C6アルキニル基、および環状C3〜C10アルキル基からなる群から選択され;(b)必要に応じて、少なくとも1つの溶媒。本明細書に記載の組成物の特定の実施形態では、例示的な溶媒には、エーテル、第三級アミン、アルキル炭化水素、芳香族炭化水素、第三級アミノエーテル、およびそれらの組み合わせが含まれるが、これらに限定されない。特定の実施態様では、シラシクロアルカンの沸点と溶媒の沸点との差は40℃以下である。溶媒中のシラシクロアルカン前駆体化合物の重量%は、1〜99wt%、または10〜90wt%、または20〜80wt%、または30〜70wt%、または40〜60wt%、50〜50wt%である。いくつかの実施形態において、組成物は、シリコン含有膜のための反応チャンバへの直接液体注入を介して送達され得ます。
前述の利点に加えて、PEALD、PECCVD、またはPEFCVD堆積法を使用して炭化ケイ素または炭窒化ケイ素の膜を堆積するなどの特定の実施形態では、本明細書に記載のシラシクロアルカン前駆体は、例えば、400℃以下、350℃以下、300℃以下、または250℃以下、200℃以下、150℃以下、100℃以下、または50℃以下の1つ以上の堆積温度で高密度材料を堆積できる可能性がある。
有機アミンの例には、メチルアミン、エチルアミン、プロピルアミン、イソプロピルアミン、tert−ブチルアミン、sec−ブチルアミン、tert−アミルアミン、エチレンジアミン、ジメチルアミン、トリメチルアミン、ジエチルアミン、およびトリエチルアミンが含まれますが、これらに限定されません。
式(1)〜(2)において、R1およびR2は、式Iで記載された置換基と同じであり、Xは、塩化物、臭化物、およびヨウ化物からなる群から選択されます。以下の式(1)〜(3)は、本明細書に記載の式IAまたはIBで表される構造を有するシラシクロアルカン前駆体を作製するために使用できる反応スキームまたは合成経路の非限定的な例を提供する。式(1)〜(3)の反応は、有機溶媒と共に(すなわち、存在下で)または有機溶媒を用いることなしに(すなわち、非存在下で)行うことができます。有機溶媒が使用される実施形態において、適切な有機溶媒の例には、ヘキサン、オクタン、トルエンなどの炭化水素、およびジエチルエーテルおよびテトラヒドロフラン(THF)などのエーテルが含まれるが、これらに限定されない。これらまたは他の実施形態において、反応温度は、溶媒が使用される場合、約−70℃から使用される溶媒の沸点までの範囲である。得られるシラシクロアルカンは、例えば、すべての副産物および存在する場合は溶媒を除去した後、真空蒸留または昇華によって精製することができます。式(1)〜(2)は、式IAまたはIBで表される構造を有するシラシクロアルカン前駆体を作製する合成経路の2つの例である。環化を含む他の合成経路も使用することができます。
a.反応器内に基板を提供します;
b.反応器に、式IAの構造で表される化合物および式IBの構造で表される化合物からなる群から選択される少なくとも1つのシラシクロアルカン前駆体を導入する:
ここで、R1は、水素、直鎖または分岐C1〜C10アルキル基、環状C3〜C10アルキル基、直鎖または分岐C2〜C10アルケニル基、および直鎖または分岐C2〜C10アルキニル基からなる群から選択され;R2は、直鎖または分岐C2〜C6アルケニル基、直鎖または分岐C2〜C6アルキニル基、および環状C3〜C10アルキル基からなる群から選択され、ここで、少なくとも1つのシラシクロアルカン前駆体は、基板の表面の少なくとも一部で反応して、化学吸着層を提供します;
c.パージガスで反応器をパージします;
d.プラズマ含有源を反応器に導入して、化学吸着層の少なくとも一部と反応し、少なくとも1つの反応部位を提供し、ここで、プラズマは、約0.01〜約1.5W/cm2の範囲の出力密度で生成されます;そして、
e.必要に応じて、反応器を不活性ガスでパージする;ここで、ステップbからeは、誘電体膜の所望の厚さが得られるまで繰り返されます。
a.反応器内に基板を提供する;
b.反応器に、式IAの構造で表される化合物および式IBの構造で表される化合物からなる群から選択される少なくとも1つのシラシクロアルカン前駆体を導入する:
ここで、R1は、水素、直鎖または分岐C1〜C10アルキル基、環状C3〜C10アルキル基、直鎖または分岐C2〜C10アルケニル基、および直鎖または分岐C2〜C10アルキニル基からなる群から選択され;R2は、直鎖または分岐C2〜C6アルケニル基、直鎖または分岐C2〜C6アルキニル基、および環状C3〜C10アルキル基からなる群から選択され、ここで、少なくとも1つのシラシクロアルカン前駆体は、基板の表面の少なくとも一部で反応して、化学吸着層を提供する;
c.窒素、希ガス、およびそれらの組み合わせから選択される少なくとも1つを含むパージガスで反応器をパージする;
d.プラズマ含有源と不活性ガスを反応器に導入して、化学吸着層の少なくとも一部と反応し、少なくとも1つの反応部位を提供し、ここで、プラズマは、約0.01〜約1.5W/cm2の範囲の出力密度で生成される;そして、
e.必要に応じて、反応器を不活性ガスでパージする;ここで、ステップbからeは、誘電体膜の所望の厚さが得られるまで繰り返される。いくつかの実施形態において、窒素源を含むプラズマは、少なくとも1つの窒素源の形態で反応器に導入されてもよく、および/または堆積プロセスで使用される他の前駆体に付随して存在してもよい。適切な窒素含有源ガスには、例えば、アンモニア、ヒドラジン、モノアルキルヒドラジン、ジアルキルヒドラジン、窒素プラズマ、窒素/水素、窒素/ヘリウム、窒素/アルゴンプラズマ、アンモニアプラズマ、窒素/アンモニアプラズマ、アンモニア/ヘリウムプラズマ、アンモニア/アルゴンプラズマ、アンモニア/窒素プラズマ、NF3プラズマ、有機アミンプラズマ、およびそれらの混合物が含まれます。他の実施形態では、プラズマは、水素プラズマ、ヘリウムプラズマ、ネオンプラズマ、アルゴンプラズマ、キセノンプラズマ、水素/ヘリウムプラズマ、水素/アルゴンプラズマおよびそれらの混合物からなる群から選択されます。
a.反応器内に基板を提供する;
b.反応器に、式IAの構造で表される化合物および式IBの構造で表される化合物からなる群から選択される少なくとも1つのシラシクロアルカン前駆体を導入する:
ここで、R1は、水素、直鎖または分岐C1〜C10アルキル基、環状C3〜C10アルキル基、直鎖または分岐C2〜C10アルケニル基、および直鎖または分岐C2〜C10アルキニル基からなる群から選択され;R2は、直鎖または分岐C2〜C6アルケニル基、直鎖または分岐C2〜C6アルキニル基、および環状C3〜C10アルキル基からなる群から選択され、ここで、少なくとも1つのシラシクロアルカン前駆体は、遠隔プラズマ源で生成されたフリーラジカルと反応します。
−20℃〜約200℃の範囲の1つ以上の温度にある反応器に、表面特性を含む基板を配置します;
式IAの構造で表される化合物および式IBの構造で表される化合物からなる群から選択される少なくとも1つのシラシクロアルカン前駆体を反応器に導入します:
ここで、R1は、水素、直鎖または分岐C1〜C10アルキル基、環状C3〜C10アルキル基、直鎖または分岐C2〜C10アルケニル基、および直鎖または分岐C2〜C10アルキニル基からなる群から選択され;R2は、直鎖または分岐C2〜C6アルケニル基、直鎖または分岐C2〜C6アルキニル基、および環状C3〜C10アルキル基からなる群から選択されます;そして、
プラズマ源を反応器に供給して、第1および第2の化合物を少なくとも部分的に反応させて流動性液体を形成し、その流動性液体は表面特性の部分を少なくとも部分的に満たす。流動性液体は、少なくとも1つのオリゴマーを含みます。
−20℃〜約400℃の範囲の1つ以上の温度にある反応器に、表面特性を含む基板を配置します;
式IAの構造で表される化合物および式IBの構造で表される化合物からなる群から選択される少なくとも1つのシラシクロアルカン前駆体を反応器に導入します:
ここで、R1は、水素、直鎖または分岐C1〜C10アルキル基、環状C3〜C10アルキル基、直鎖または分岐C2〜C10アルケニル基、および直鎖または分岐C2〜C10アルキニル基からなる群から選択され;R2は、直鎖または分岐C2〜C6アルケニル基、直鎖または分岐C2〜C6アルキニル基、および環状C3〜C10アルキル基からなる群から選択されます;そして、
少なくとも1つのSi−H結合を有する第2の化合物を反応器に導入し、少なくとも1つの第2の化合物は、以下の式IIA〜IIHおよびIIIからなる群から選択されます:
IIA.式SiXH2X+2を有するポリシラン化合物、ここで、X=2〜6の数である;
IIB.式R1 mSiH4−m、ここで、R1は水素と直鎖または分岐のC1〜C10のアルキル基から選択され;mは1,2および3から選択させる数である;
IIC.式SiH3−R2−SiH3を有する化合物、ここで、R2は直鎖または分岐C1~C6アルキレン基である;
IID.式R3SiH2−R2−SiH2R4を有する化合物、ここで、R2は直鎖または分岐鎖のC1〜C6アルキレン基であり;R3は、水素、直鎖または分岐C1〜C10アルキル基、およびC4〜C10アリール基から選択され;そして、R4は、直鎖または分岐C1〜C10アルキル基から選択される;
IIE.式(R3R4N)nSiH3−nR1を有する化合物、式中、R1は水素および直鎖または分岐鎖のC1〜C10アルキル基から選択され;R3は、水素、直鎖または分岐C1〜C10アルキル基、およびC4〜C10アリール基から選択され;そして、R4は、直鎖または分岐C1〜C10アルキル基から選択される;
IIF.1,3−ジシラシクロブタンまたはその誘導体、または1,3,5−トリシラシクロヘキサンおよびその誘導体などのシラシクロアルキル化合物;
IIG.トリシリルアミン化合物またはその誘導体;および
IIH.式[(R3R4N)pSiH3−p]2NR1または[R3 pSiH2−pNR1]qを有するシラザン化合物、ここで、R1は水素および直鎖または分岐C1〜C10アルキル基から選択され;R3は、水素、分岐C1〜C10アルキル基、およびC4〜C10アリール基から選択され;R4は、直鎖または分岐C1〜C10アルキル基から選択され;p=0,1,2;q=2または3;そして
III.式(R3R4N)SiH2SiH3を有する有機アミノジシラン、ここで、R3は水素、分岐C1〜C10アルキル基、およびC4〜C10アリール基から選択され;R4は、直鎖または分岐C1〜C10アルキル基から選択され;そして
プラズマ源を反応器に供給して、第1および第2の化合物を少なくとも部分的に反応させて流動性液体またはオリゴマーを形成し、流動性液体またはオリゴマーは表面特性の部分を少なくとも部分的に満たす。
例1:1,1,3,3−テトラビニル−1,3−ジシラシクロブタンの合成
例2:1,3−ジビニル−1,3−ジメチル−1,3−ジシラシクロブタンの合成
例3:1,3−ジビニル−1,3−ジメチル−シラシクロブタンと水素プラズマを使用したPEALD炭化ケイ素膜(予言的)
a.シラシクロアルカン前駆体を反応器に導入する
窒素流量:1000sccm
シラシクロアルカン前駆体パルス:1秒
b.不活性ガスパージ
窒素流量:1000sccm
パージ時間:10秒
c.水素プラズマの導入
水素流量:1000sccm
水素プラズマパルス:125Wのプラズマ出力で10秒
d.パージ
窒素流量:1000sccm
パージ時間:10秒
炭化ケイ素膜を提供するために、ステップa〜dを500サイクル繰り返しました。
例4:1,1,3,3−テトラビニル−1,3−ジシラシクロブタンを使用した炭化ケイ素膜のPEFCVD
マイクロ波プラズマパワー 2000W
圧力 1トル
前駆体流量 2000mg/分
Heキャリア流量 100sccm
RPSを通過するNH3流量 500sccm
基板温度 12℃
堆積時間 120秒
堆積後、膜は、真空破壊させずに300℃で5分間アニールしたアニーリングチャンバーにウェーハを移し、その後、サセプター温度400℃で10分間UV照射処理した別のチャンバーに移すことによって処理されます。結果として得られるフィルムは、図1に見ることができ、流動性の炭化ケイ素は、特性の上に底から積み上げて平らに積み過ぎるほど特性を十分に満たすことが示されました。図1に示す膜の組成は、X線光電子分光法(XPS)で次のように決定されました:炭素74.0at%、窒素<1.0at%、酸素5.0at%、シリコン20.0at%。アンモニアが遠隔プラズマ源として使用されたが、得られた膜の窒素が1.0at%未満であったことは予想外です。
Claims (30)
- 基板の少なくとも表面上にシリコンおよび炭素を含む誘電体膜を形成する方法であって、以下のステップを含む方法:
a.反応器内に基板を提供する;
b.反応器に、式IAの構造で表される化合物および式IBの構造で表される化合物からなる群から選択される少なくとも1つのシラシクロアルカン前駆体を導入する:
ここで、R1は、水素、直鎖または分岐C1〜C10アルキル基、環状C3〜C10アルキル基、直鎖または分岐C2〜C10アルケニル基、および直鎖または分岐C2〜C10アルキニル基からなる群から選択され;R2は、直鎖または分岐C2〜C6アルケニル基、直鎖または分岐C2〜C6アルキニル基、および環状C3〜C10アルキル基からなる群から選択され、ここで、少なくとも1つのシラシクロアルカン前駆体は、基板の表面の少なくとも一部で反応して、化学吸着層を提供する;
c.パージガスで反応器をパージする;
d.プラズマ含有源と不活性ガスを反応器に導入して、化学吸着層の少なくとも一部と反応し、少なくとも1つの反応部位を提供し、ここで、プラズマは、約0.01〜約1.5W/cm2の範囲の出力密度で生成される;そして、
e.必要に応じて、反応器を不活性ガスでパージする;ここで、ステップbからeは、誘電体膜の所望の厚さが得られるまで繰り返される。 - 少なくとも1つのシラシクロアルカン前駆体が、1,3−ジビニル−1,3−ジシラシクロブタン、1,3−ジビニル−1,3−ジメチル−1,3−ジシラシクロブタン、1,1,3,3−テトラビニル−1,3−ジシラシクロブタン、1,3,5−トリビニル−1,3,5−トリシラシクロヘキサン、1,3,5−トリビニル−1,3,5−トリメチル−1,3,5−トリシラシクロヘキサン、1,1,3,3,5,5−ヘキサビニル−1,3,5−トリシラシクロヘキサン、1,3−ジアリル−1,3−ジメチル−1,3−ジシラシクロブタン、1,1,3,3−テトラアリル−1,3−ジシラシクロブタン、1,3,5−トリアリル−1,3,5−トリシラシクロヘキサン、1,3,5−トリアリル−1,3,5−トリメチル−1,3,5−トリシラシクロヘキサン、1,1,3,3,5,5−ヘキサアリル−1,3,5−トリシラシクロヘキサン、1,3−ジアセチレニル−1,3−ジシラシクロブタン、1,3−ジアセチレニル−1,3−ジメチル−1,3−ジシラシクロブタン、1,1,3,3−テトラアセチレニル−1,3−ジシラシクロブタン、1,3,5−トリアセチレニル−1,3,5−トリシラシクロヘキサン、1,3,5−トリアセチレニル−1,3,5−トリメチル−1,3,5−トリシラシクロヘキサン、1,1,3,3,5,5−ヘキサアセチレニル−1,3,5−トリシラシクロヘキサン1,3−ジシクロプロピル−1,3−ジシラシクロブタン、1,3−ジシクロプロピル−1,3−ジメチル−1,3−ジシラシクロブタン、1,1,3,3−テトラシクロプロピル−1,3−ジシラシクロブタンおよびその組み合わせからなる群から選択される、請求項1に記載の方法。
- プラズマ含有源が、水素プラズマ、水素/ヘリウム、水素/アルゴンプラズマ、水素/ネオンプラズマ、ヘリウムプラズマ、アルゴンプラズマ、ネオンプラズマ、およびそれらの混合物からなる群から選択される、請求項1に記載の方法。
- 誘電体膜が2.2g/cc以上の密度を有する、請求項1に記載の方法。
- 前記方法が、プラズマ強化原子層堆積、プラズマ強化周期化学蒸着、およびプラズマ強化流動性化学蒸着からなる群から選択される少なくとも1つの蒸着プロセスである、請求項1に記載の方法。
- 前記方法が約400℃以下の1つ以上の温度で実施される、請求項1に記載の方法。
- 前記方法が約300℃以下の1つ以上の温度で実施される、請求項1に記載の方法。
- 基板の少なくとも表面上に炭化ケイ素または炭窒化ケイ素の膜を形成する方法であって、以下のステップを含む方法:
a.反応器内に基板を提供する;
b.反応器に、1,3−ジビニル−1,3−ジシラシクロブタン、1,3−ジビニル−1,3−ジメチル−1,3−ジシラシクロブタン、1,1,3,3−テトラビニル−1,3−ジシラシクロブタン、1,3,5−トリビニル−1,3,5−トリシラシクロヘキサン、1,3,5−トリビニル−1,3,5−トリメチル−1,3,5−トリシラシクロヘキサン、1,1,3,3,5,5−ヘキサビニル−1,3,5−トリシラシクロヘキサン、1,3−ジアリル−1,3−ジメチル−1,3−ジシラシクロブタン、1,1,3,3−テトラアリル−1,3−ジシラシクロブタン、1,3,5−トリアリル−1,3,5−トリシラシクロヘキサン、1,3,5−トリアリル−1,3,5−トリメチル−1,3,5−トリシラシクロヘキサン、1,1,3,3,5,5−ヘキサアリル−1,3,5−トリシラシクロヘキサン、1,3−ジアセチレニル−1,3−ジシラシクロブタン、1,3−ジアセチレニル−1,3−ジメチル−1,3−ジシラシクロブタン、1,1,3,3−テトラアセチレニル−1,3−ジシラシクロブタン、1,3,5−トリアセチレニル−1,3,5−トリシラシクロヘキサン、1,3,5−トリアセチレニル−1,3,5−トリメチル−1,3,5−トリシラシクロヘキサン、1,1,3,3,5,5−ヘキサアセチレニル−1,3,5−トリシラシクロヘキサン1,3−ジシクロプロピル−1,3−ジシラシクロブタン、1,3−ジシクロプロピル−1,3−ジメチル−1,3−ジシラシクロブタン、1,1,3,3−テトラシクロプロピル−1,3−ジシラシクロブタンおよびその組み合わせからなる群から選択される少なくとも1つのシラシクロアルカン前駆体を導入し、少なくとも1つのシラシクロアルカンは、基板の表面の少なくとも一部で反応して、化学吸着層を提供する;
c.窒素、希ガス、およびそれらの組み合わせから選択される少なくとも1つを含むパージガスで反応器をパージする;
d.プラズマ含有源を反応器に導入して、化学吸着層の少なくとも一部と反応し、約0.01〜約1.5W/cm2の範囲の出力密度でプラズマが生成される少なくとも1つの反応部位を提供する;そして
e.必要に応じて、反応器を不活性ガスでパージする;ここで、ステップbからeは、窒化ケイ素膜の所望の厚さが得られるまで繰り返される。 - 炭化ケイ素または炭窒化ケイ素の膜が2.2g/cc以上の密度を有する、請求項8に記載の方法。
- 前記方法が、プラズマ強化原子層堆積、プラズマ強化周期化学蒸着、およびプラズマ強化流動性化学蒸着からなる群から選択される蒸着プロセスである、請求項8に記載の方法。
- 前記方法が400℃以下の温度で実施される、請求項8に記載の方法。
- 前記方法が300℃以下の温度で実施される、請求項8に記載の方法。
- 前記方法が100℃以下の温度で実施される、請求項8に記載の方法。
- プラズマ含有源が、水素プラズマ、水素/ヘリウム、水素/アルゴンプラズマ、水素/ネオンプラズマ、ヘリウムプラズマ、アルゴンプラズマ、ネオンプラズマ、窒素/アルゴンプラズマ、アンモニアプラズマ、窒素/アンモニアプラズマ、アンモニア/ヘリウムプラズマ、アンモニア/アルゴンプラズマ、アンモニア/窒素プラズマ、NF3プラズマ、有機アミンプラズマ、およびそれらの混合物からなる群から選択される、請求項8に記載の方法。
- シリコン含有誘電体膜の蒸着用組成物であって、1,3−ビス(tert−ブチル)シラシクロアルカン、1,3−ビス(tert−ブチル)−2−メチルシラシクロアルカン、1,3−ビス(tert−ブチル)−2,4−ジメチルシラシクロアルカン、1,3−ビス(tert−アミル)シラシクロアルカン、1,3−ビス(tert−アミル)−2−メチルシラシクロアルカン、1,3−ビス(tert−アミル)−2,4−ジメチルシラシクロアルカン、1,3−ビス(tert−ブチル)−2−クロロクロジシラザン、1,3−ビス(tert−ブチル)−2.4−ジクロロシラシクロアルカン、1,3−ビス(tert−アミル)−2−クロロクロジシラザン、1,3−ビス(tert−アミル)−2,4−ジクロロシラシクロアルカン、1,3−ビス(tert−ブチル)−2,4,4−トリクロロシラシクロアルカン、1,3−ビス(tert−ブチル)−2−ジメチルシラシクロアルカン、1,3−ビス(tert−ブチル)−2−クロロ−2−メチルシラシクロアルカン、1,3−ビス(tert−アミル)−2−ジメチルシラシクロアルカン、1,3−ビス(tert−アミル)−2−クロロ−2−メチル−シラシクロアルカン、1,3−ビス(tert−ブチル)−2−ビニルシラシクロアルカン、1,3−ビス(tert−ブチル)−2−エチニルシラシクロアルカン、1,3−ジシクロプロピル−1,3−ジシラシクロブタン、1,3−ジシクロプロピル−1,3−ジメチル−1,3−ジシラシクロブタン、および1,1,3,3−テトラシクロプロピル−1,3−ジシラシクロブタンからなる群から選択される少なくとも1つのシラシクロアルカン前駆体を含むシリコン含有誘電体膜の蒸着用組成物であって、シラシクロアルカン前駆体は、ハロゲン化物、水、金属イオン、およびそれらの組み合わせからなる群から選択される1つまたは複数の不純物を実質的に含まない蒸着用組成物。
- 前記ハロゲン化物が塩化物イオンを含む、請求項15に記載の組成物。
- 塩化物イオン濃度が50ppm未満である、請求項15に記載の組成物。
- 塩化物イオン濃度が10ppm未満である、請求項13に記載の組成物。
- 塩化物イオン濃度が5ppm未満である、請求項13に記載の組成物。
- シリコン含有膜堆積用のシラシクロアルカン前駆体を供給するために使用される容器であって、1,3−ビス(tert−ブチル)シラシクロアルカン、1,3−ビス(tert−ブチル)−2−メチルシラシクロアルカン、1,3−ビス(tert−ブチル)−2,4−ジメチルシラシクロアルカン、1,3−ビス(tert−アミル)シラシクロアルカン、1,3−ビス(tert−アミル)−2−メチルシラシクロアルカン、1,3−ビス(tert−アミル)−2,4−ジメチルシラシクロアルカン、1,3−ビス(tert−ブチル)−2−クロロクロジシラザン、1,3−ビス(tert−ブチル)−2.4−ジクロロシラシクロアルカン、1,3−ビス(tert−アミル)−2−クロロクロジシラザン、1,3−ビス(tert−アミル)−2,4−ジクロロシラシクロアルカン、1,3−ビス(tert−ブチル)−2,4,4−トリクロロシラシクロアルカン、1,3−ビス(tert−ブチル)−2−ジメチルシラシクロアルカン、1,3−ビス(tert−ブチル)−2−クロロ−2−メチルシラシクロアルカン、1,3−ビス(tert−アミル)−2−ジメチルシラシクロアルカン、1,3−ビス(tert−アミル)−2−クロロ−2−メチル−シラシクロアルカン、1,3−ビス(tert−ブチル)−2−ビニルシラシクロアルカン、1,3−ビス(tert−ブチル)−2−エチニルシラシクロアルカン、1,3−ジシクロプロピル−1,3−ジシラシクロブタン、1,3−ジシクロプロピル−1,3−ジメチル−1,3−ジシラシクロブタン、および1,1,3,3−テトラシクロプロピル−1,3−ジシラシクロブタンからなる群から選択され、ハロゲン化物、水、金属イオン、およびそれらの組み合わせからなる群から選択される1つまたは複数の不純物を実質的に含まない、シラシクロアルカン前駆体を含む容器であって、前駆体の純度は約98%以上であり、ヘリウム、アルゴン、窒素、およびそれらの組み合わせからなる群から選択される少なくとも1つの不活性ガスを含むヘッドスペースを有する容器。
- 容器がステンレス鋼からなる、請求項20に記載の容器。
- プラズマ強化流動性化学蒸着法によりシリコンと炭素を含む誘電体膜を堆積する方法であって、以下のステップを含む方法:
−20℃〜約200℃の範囲の1つ以上の温度にある反応器に、表面特性を含む基板を配置する;
式IAの構造で表される化合物および式IBの構造で表される化合物からなる群から選択される少なくとも1つのシラシクロアルカン前駆体を反応器に導入する:
ここで、R1は、水素、直鎖または分岐C1〜C10アルキル基、環状C3〜C10アルキル基、直鎖または分岐C2〜C10アルケニル基、および直鎖または分岐C2〜C10アルキニル基からなる群から選択され;R2は、直鎖または分岐C2〜C6アルケニル基、直鎖または分岐C2〜C6アルキニル基、および環状C3〜C10アルキル基からなる群から選択される;そして、
プラズマ源を反応器に供給して、第1および第2の化合物を少なくとも部分的に反応させて流動性液体を形成し、その流動性液体は表面特性の部分を少なくとも部分的に満たす。 - 少なくとも1つのシラシクロアルカン前駆体が、1,3−ジビニル−1,3−ジシラシクロブタン、1,3−ジビニル−1,3−ジメチル−1,3−ジシラシクロブタン、1,1,3,3−テトラビニル−1,3−ジシラシクロブタン、1,3,5−トリビニル−1,3,5−トリシラシクロヘキサン、1,3,5−トリビニル−1,3,5−トリメチル−1,3,5−トリシラシクロヘキサン、1,1,3,3,5,5−ヘキサビニル−1,3,5−トリシラシクロヘキサン、1,3−ジアリル−1,3−ジメチル−1,3−ジシラシクロブタン、1,1,3,3−テトラアリル−1,3−ジシラシクロブタン、1,3,5−トリアリル−1,3,5−トリシラシクロヘキサン、1,3,5−トリアリル−1,3,5−トリメチル−1,3,5−トリシラシクロヘキサン、1,1,3,3,5,5−ヘキサアリル−1,3,5−トリシラシクロヘキサン、1,3−ジアセチレニル−1,3−ジシラシクロブタン、1,3−ジアセチレニル−1,3−ジメチル−1,3−ジシラシクロブタン、1,1,3,3−テトラアセチレニル−1,3−ジシラシクロブタン、1,3,5−トリアセチレニル−1,3,5−トリシラシクロヘキサン、1,3,5−トリアセチレニル−1,3,5−トリメチル−1,3,5−トリシラシクロヘキサン、1,1,3,3,5,5−ヘキサアセチレニル−1,3,5−トリシラシクロヘキサン1,3−ジシクロプロピル−1,3−ジシラシクロブタン、1,3−ジシクロプロピル−1,3−ジメチル−1,3−ジシラシクロブタン、1,1,3,3−テトラシクロプロピル−1,3−ジシラシクロブタンおよびその組み合わせからなる群から選択される、請求項22に記載の方法。
- 堆積プロセスがプラズマ強化化学蒸着であり、プラズマがその場で生成される、請求項22に記載の方法。
- 堆積プロセスがプラズマ強化化学蒸着であり、プラズマが離れたところで生成される、請求項22に記載の方法。
- 堆積プロセスがプラズマ強化化学蒸着であり、プラズマが、1つのプラズマ源がその場で生成され、1つのプラズマ源が離れたところで生成される、デュアルプラズマ源である、請求項22に記載の方法。
- 反応器が、−20℃〜約100℃の範囲の1つ以上の温度にある、請求項22に記載の方法。
- 前記流動性液体が少なくとも1つのオリゴマーを含む、請求項22に記載の方法。
- 請求項1の方法により製造されたシリコン含有膜。
- 請求項22の方法により製造されたシリコン含有膜。
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Families Citing this family (231)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
CN107429391B (zh) * | 2014-10-24 | 2021-06-25 | 弗萨姆材料美国有限责任公司 | 组合物和使用所述组合物沉积含硅膜的方法 |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US20180033614A1 (en) * | 2016-07-27 | 2018-02-01 | Versum Materials Us, Llc | Compositions and Methods Using Same for Carbon Doped Silicon Containing Films |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
WO2019103613A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | A storage device for storing wafer cassettes for use with a batch furnace |
KR102633318B1 (ko) | 2017-11-27 | 2024-02-05 | 에이에스엠 아이피 홀딩 비.브이. | 청정 소형 구역을 포함한 장치 |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
CN111630203A (zh) | 2018-01-19 | 2020-09-04 | Asm Ip私人控股有限公司 | 通过等离子体辅助沉积来沉积间隙填充层的方法 |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
WO2019158960A1 (en) | 2018-02-14 | 2019-08-22 | Asm Ip Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
KR20190128558A (ko) | 2018-05-08 | 2019-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
TW202409324A (zh) | 2018-06-27 | 2024-03-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料之循環沉積製程 |
TW202405221A (zh) | 2018-06-27 | 2024-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的***及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
CN112969816A (zh) * | 2018-10-04 | 2021-06-15 | 弗萨姆材料美国有限责任公司 | 用于高质量氧化硅薄膜的高温原子层沉积的组合物 |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) * | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP7504584B2 (ja) | 2018-12-14 | 2024-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
JP7509548B2 (ja) | 2019-02-20 | 2024-07-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
JP2020136678A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための方法および装置 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
KR20200123380A (ko) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
TWI839544B (zh) | 2019-07-19 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | 形成形貌受控的非晶碳聚合物膜之方法 |
CN114174555A (zh) * | 2019-07-25 | 2022-03-11 | 弗萨姆材料美国有限责任公司 | 用于沉积含硅膜的包含硅杂环烷烃的组合物及其使用方法 |
TW202113936A (zh) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
TW202111147A (zh) | 2019-08-12 | 2021-03-16 | 美商應用材料股份有限公司 | 低k介電膜 |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
CN112635282A (zh) | 2019-10-08 | 2021-04-09 | Asm Ip私人控股有限公司 | 具有连接板的基板处理装置、基板处理方法 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210078405A (ko) | 2019-12-17 | 2021-06-28 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 나이트라이드 층을 형성하는 방법 및 바나듐 나이트라이드 층을 포함하는 구조 |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
TW202140135A (zh) | 2020-01-06 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 氣體供應總成以及閥板總成 |
KR20210089079A (ko) | 2020-01-06 | 2021-07-15 | 에이에스엠 아이피 홀딩 비.브이. | 채널형 리프트 핀 |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
CN113394086A (zh) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | 用于制造具有目标拓扑轮廓的层结构的方法 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
CN113555279A (zh) | 2020-04-24 | 2021-10-26 | Asm Ip私人控股有限公司 | 形成含氮化钒的层的方法及包含其的结构 |
KR20210132605A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
KR20210143653A (ko) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
KR20210145080A (ko) | 2020-05-22 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 과산화수소를 사용하여 박막을 증착하기 위한 장치 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
US11371144B2 (en) * | 2020-06-10 | 2022-06-28 | Applied Materials, Inc. | Low-k films |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202202649A (zh) | 2020-07-08 | 2022-01-16 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
KR20220010438A (ko) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | 포토리소그래피에 사용하기 위한 구조체 및 방법 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
US12040177B2 (en) | 2020-08-18 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a laminate film by cyclical plasma-enhanced deposition processes |
KR20220027026A (ko) | 2020-08-26 | 2022-03-07 | 에이에스엠 아이피 홀딩 비.브이. | 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템 |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
KR20220053482A (ko) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
TW202235649A (zh) | 2020-11-24 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 填充間隙之方法與相關之系統及裝置 |
KR20220076343A (ko) | 2020-11-30 | 2022-06-08 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터 |
CN114639631A (zh) | 2020-12-16 | 2022-06-17 | Asm Ip私人控股有限公司 | 跳动和摆动测量固定装置 |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03115573A (ja) * | 1989-04-12 | 1991-05-16 | Dow Corning Corp | 非晶質炭化珪素を含むコーティングの形成方法 |
WO2006109686A1 (ja) * | 2005-04-08 | 2006-10-19 | Taiyo Nippon Sanso Corporation | 絶縁膜用材料およびその成膜方法 |
WO2017023693A1 (en) * | 2015-07-31 | 2017-02-09 | Air Products And Chemicals, Inc. | Compositions and methods for depositing silicon nitride films |
WO2017095433A1 (en) * | 2015-12-04 | 2017-06-08 | Intel Corporation | Liquid precursor based dielectrics with control of carbon, oxygen and silicon composition |
WO2017147150A1 (en) * | 2016-02-26 | 2017-08-31 | Versum Materials Us, Llc | Compositions and methods using same for deposition of silicon-containing film |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3816392A1 (de) * | 1988-05-13 | 1989-11-23 | Ver Glaswerke Gmbh | Verfahren zur bestimmung der optischen qualitaet von flachglas oder flachglasprodukten |
US4923716A (en) * | 1988-09-26 | 1990-05-08 | Hughes Aircraft Company | Chemical vapor desposition of silicon carbide |
US5190890A (en) * | 1990-06-04 | 1993-03-02 | Advanced Technology Materials, Inc. | Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates, and method of making the same |
US5043773A (en) * | 1990-06-04 | 1991-08-27 | Advanced Technology Materials, Inc. | Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates |
US5053255A (en) * | 1990-07-13 | 1991-10-01 | Olin Corporation | Chemical vapor deposition (CVD) process for the thermally depositing silicon carbide films onto a substrate |
US5061514A (en) * | 1990-07-13 | 1991-10-29 | Olin Corporation | Chemical vapor deposition (CVD) process for plasma depositing silicon carbide films onto a substrate |
US5415126A (en) * | 1993-08-16 | 1995-05-16 | Dow Corning Corporation | Method of forming crystalline silicon carbide coatings at low temperatures |
US6440876B1 (en) * | 2000-10-10 | 2002-08-27 | The Boc Group, Inc. | Low-K dielectric constant CVD precursors formed of cyclic siloxanes having in-ring SI—O—C, and uses thereof |
US6926926B2 (en) * | 2001-09-10 | 2005-08-09 | Applied Materials, Inc. | Silicon carbide deposited by high density plasma chemical-vapor deposition with bias |
US20040197474A1 (en) * | 2003-04-01 | 2004-10-07 | Vrtis Raymond Nicholas | Method for enhancing deposition rate of chemical vapor deposition films |
JP4280686B2 (ja) * | 2004-06-30 | 2009-06-17 | キヤノン株式会社 | 処理方法 |
US7892648B2 (en) * | 2005-01-21 | 2011-02-22 | International Business Machines Corporation | SiCOH dielectric material with improved toughness and improved Si-C bonding |
US7754906B2 (en) * | 2005-10-07 | 2010-07-13 | Air Products And Chemicals, Inc. | Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides |
US7989033B2 (en) * | 2007-07-12 | 2011-08-02 | Applied Materials, Inc. | Silicon precursors to make ultra low-K films with high mechanical properties by plasma enhanced chemical vapor deposition |
JP5317089B2 (ja) * | 2008-01-23 | 2013-10-16 | 独立行政法人物質・材料研究機構 | 成膜方法および絶縁膜 |
US8703624B2 (en) * | 2009-03-13 | 2014-04-22 | Air Products And Chemicals, Inc. | Dielectric films comprising silicon and methods for making same |
US8993460B2 (en) * | 2013-01-10 | 2015-03-31 | Novellus Systems, Inc. | Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis reactions with organometallic co-reactants |
WO2012039833A2 (en) * | 2010-09-24 | 2012-03-29 | Applied Materials, Inc. | Low temperature silicon carbide deposition process |
US20130217239A1 (en) * | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Flowable silicon-and-carbon-containing layers for semiconductor processing |
WO2013039881A2 (en) * | 2011-09-13 | 2013-03-21 | Applied Materials, Inc. | Carbosilane precursors for low temperature film deposition |
US8569184B2 (en) * | 2011-09-30 | 2013-10-29 | Asm Japan K.K. | Method for forming single-phase multi-element film by PEALD |
US8722546B2 (en) * | 2012-06-11 | 2014-05-13 | Asm Ip Holding B.V. | Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control |
US20140023794A1 (en) * | 2012-07-23 | 2014-01-23 | Maitreyee Mahajani | Method And Apparatus For Low Temperature ALD Deposition |
EP2935646A4 (en) * | 2012-12-21 | 2016-10-12 | Prasad Narhar Gadgil | METHODS OF LOW-TEMPERATURE DEPOSITION OF CERAMIC THIN FILMS |
US9343293B2 (en) * | 2013-04-04 | 2016-05-17 | Applied Materials, Inc. | Flowable silicon—carbon—oxygen layers for semiconductor processing |
US9371579B2 (en) * | 2013-10-24 | 2016-06-21 | Lam Research Corporation | Ground state hydrogen radical sources for chemical vapor deposition of silicon-carbon-containing films |
US10023958B2 (en) * | 2013-11-22 | 2018-07-17 | Applied Materials, Inc. | Atomic layer deposition of films comprising silicon, carbon and nitrogen using halogenated silicon precursors |
US9685325B2 (en) * | 2014-07-19 | 2017-06-20 | Applied Materials, Inc. | Carbon and/or nitrogen incorporation in silicon based films using silicon precursors with organic co-reactants by PE-ALD |
WO2017048268A1 (en) * | 2015-09-17 | 2017-03-23 | Intel Corporation | Gap filling material and process for semiconductor devices |
CN108603287B (zh) * | 2015-12-21 | 2021-11-02 | 弗萨姆材料美国有限责任公司 | 用于沉积含硅膜的组合物及使用其的方法 |
US20160314962A1 (en) * | 2016-06-30 | 2016-10-27 | American Air Liquide, Inc. | Cyclic organoaminosilane precursors for forming silicon-containing films and methods of using the same |
-
2018
- 2018-09-11 EP EP18855737.5A patent/EP3682041B1/en active Active
- 2018-09-11 US US16/646,686 patent/US11851756B2/en active Active
- 2018-09-11 KR KR1020207010524A patent/KR102434249B1/ko active IP Right Grant
- 2018-09-11 SG SG11202002265PA patent/SG11202002265PA/en unknown
- 2018-09-11 JP JP2020515256A patent/JP7025534B2/ja active Active
- 2018-09-11 CN CN201880071503.4A patent/CN111295465B/zh active Active
- 2018-09-11 CN CN202211551636.6A patent/CN115992345A/zh active Pending
- 2018-09-11 WO PCT/US2018/050414 patent/WO2019055393A1/en unknown
- 2018-09-13 TW TW107132158A patent/TWI707979B/zh active
-
2020
- 2020-03-08 IL IL273146A patent/IL273146A/en unknown
-
2023
- 2023-11-20 US US18/515,031 patent/US20240093366A1/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03115573A (ja) * | 1989-04-12 | 1991-05-16 | Dow Corning Corp | 非晶質炭化珪素を含むコーティングの形成方法 |
WO2006109686A1 (ja) * | 2005-04-08 | 2006-10-19 | Taiyo Nippon Sanso Corporation | 絶縁膜用材料およびその成膜方法 |
WO2017023693A1 (en) * | 2015-07-31 | 2017-02-09 | Air Products And Chemicals, Inc. | Compositions and methods for depositing silicon nitride films |
WO2017095433A1 (en) * | 2015-12-04 | 2017-06-08 | Intel Corporation | Liquid precursor based dielectrics with control of carbon, oxygen and silicon composition |
WO2017147150A1 (en) * | 2016-02-26 | 2017-08-31 | Versum Materials Us, Llc | Compositions and methods using same for deposition of silicon-containing film |
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CN111295465A (zh) | 2020-06-16 |
TWI707979B (zh) | 2020-10-21 |
WO2019055393A1 (en) | 2019-03-21 |
KR102434249B1 (ko) | 2022-08-18 |
EP3682041B1 (en) | 2022-04-20 |
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JP7025534B2 (ja) | 2022-02-24 |
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TW201920750A (zh) | 2019-06-01 |
EP3682041A4 (en) | 2021-08-04 |
US20200270749A1 (en) | 2020-08-27 |
CN115992345A (zh) | 2023-04-21 |
CN111295465B (zh) | 2022-12-09 |
WO2019055393A8 (en) | 2020-03-26 |
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