JP2020508581A - 光起電力セルのための光学シールド - Google Patents
光起電力セルのための光学シールド Download PDFInfo
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- JP2020508581A JP2020508581A JP2019545787A JP2019545787A JP2020508581A JP 2020508581 A JP2020508581 A JP 2020508581A JP 2019545787 A JP2019545787 A JP 2019545787A JP 2019545787 A JP2019545787 A JP 2019545787A JP 2020508581 A JP2020508581 A JP 2020508581A
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- 210000004027 cell Anatomy 0.000 claims description 75
- 239000000463 material Substances 0.000 claims description 25
- 210000005056 cell body Anatomy 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 9
- 239000004033 plastic Substances 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
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- 238000004519 manufacturing process Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 230000004907 flux Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012939 laminating adhesive Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
201、201A−光起電力セル、
10−PVセルの表面上の表面構造、
11、11A−光学機能を有するキャリア要素、
12−PVセルの本体、
13−接着剤層、
14−PVセルのための最上部保護層、
20、20A−光学シールドアセンブリ、
21−キャリア要素11のためのベース層要素、
31、32−適宜、入射光および反射光、
33−受光した光、
51、51A−光学的機能キャビティ、
52、52A−光学レリーフパターン。
11、11A キャリア要素
12 光起電力セル本体
13 接着剤層
20、20A 光学シールド
21 ベース層要素
31 入射光
32 反射光線
33 受光した光
51 光学的機能キャビティ
52、52A 光学レリーフパターン
201、201A 光起電力セル
S 構造同士の間の距離
d 光学コンタクトシールドとPVセル構造との間の距離
α 開口角
Claims (18)
- 光起電力セルのための光学シールド(20、20A)であって、少なくとも1つのキャリア要素(11)を備え、前記キャリア要素が少なくとも1つの所定の光学レリーフパターン(52)へと配列された複数の埋め込み型光学的機能キャビティ(51)を備え、前記少なくとも1つのキャリア要素内の各々の埋め込み型光学的機能キャビティが光起電力セル本体(12)の表面上に設けられた個々の表面構造(10)の上方に設置かつ整列される、光学シールド(20、20A)。
- 前記光起電力セルの前記表面上に設けられた前記個々の表面構造(10)が、電極、コンタクト、フィンガ、またはバスバーである、請求項1に記載の光学シールド。
- 前記光学的機能キャビティ(51)が要素(11、21)同士の間に存在するように、前記少なくとも1つのキャリア要素(11)に対して配置された平坦で平面状のベース層要素(21)をさらに備える、請求項1または2に記載の光学シールド。
- 前記光学的機能キャビティ(51)が、前記キャビティを囲んでいる媒体物質の屈折率とは異なる屈折率を有する内部媒体物質で満たされる、請求項1から3のいずれかに記載の光学シールド。
- 各々の埋め込み型光学的機能キャビティ(51)が、サイズ、形状、寸法、およびその配置に関して、反射機能、屈折機能、偏向機能、および回折機能のうちの少なくとも1つのために構成される、請求項1から4のいずれかに記載の光学シールド。
- 前記少なくとも1つのキャリア要素(11)および/または前記ベース層要素(21)が、プラスチックポリマ、ガラス、または樹脂である、請求項1から5のいずれかに記載の光学シールド。
- 前記埋め込み型光学的機能キャビティ(51)が、V字形溝の形状に形成される、請求項1から6のいずれかに記載の光学シールド。
- 前記埋め込み型光学的機能キャビティ(51)が、流体形態または固体形態で与えられる内部媒体物質で満たされる、請求項1から7のいずれかに記載の光学シールド。
- 前記内部媒体流体物質が、空気、気体、および液体からなる群から選択される、請求項8に記載の光学シールド。
- 各々の埋め込み型光学的機能キャビティ(51)が、光学的機能コーティングにより少なくとも部分的にコーティングされ、前記コーティングの光学機能が、正反射、拡散反射、および波長選択反射のうちの少なくとも1つを含む、請求項1から9のいずれかに記載の光学シールド。
- 前記光学レリーフパターン(52)内での寸法パラメータおよびその配置に関して、前記個々の埋め込み型光学的機能キャビティ(51)が、前記光起電力セルの前記表面上に設けられた前記表面構造(10)に対応する、請求項1から10のいずれかに記載の光学シールド。
- 少なくとも2つのキャリア要素(11、11A)を備え、各々のキャリア要素が、少なくとも1つの所定の光学レリーフパターン(52、52A)へと配列された複数の埋め込み型光学的機能キャビティ(51、51A)を含み、前記少なくとも1つの光学レリーフパターン内の前記光学的機能キャビティの寸法、形状、および周期性が、各々のキャリア要素について個々に調節可能である、請求項1から11のいずれかに記載の光学シールド。
- 前記光起電力セルの表面全体を覆うように構成された、請求項1から12のいずれかに記載の光学シールド。
- 複数の個別の要素(i)、(ii)および/または(iii)として構成され、各々の個別の要素が前記光起電力セル本体(12)の表面上に設けられた前記個々の表面構造(10)の上方に設置かつ整列される、請求項1から12のいずれかに記載の光学シールド。
- 前記個別の要素(i)、(ii)および/または(iii)が、格子を形成するように配置される、請求項14に記載の光学シールド。
- 膜、プレートまたはストリップとして構成される、請求項1から15のいずれかに記載の光学シールド。
- 請求項1から16のいずれかに記載の光学シールド(20、20A)を備える、光起電力セル(201、201A)。
- 前記光起電力セルの保護カバーの下に配置された光学シールド(20)を備える、請求項18に記載の光起電力セル。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762461934P | 2017-02-22 | 2017-02-22 | |
US62/461,934 | 2017-02-22 | ||
PCT/FI2018/050132 WO2018154185A1 (en) | 2017-02-22 | 2018-02-22 | Optical shield for photovoltaic cell |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2020508581A true JP2020508581A (ja) | 2020-03-19 |
Family
ID=63253557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019545787A Pending JP2020508581A (ja) | 2017-02-22 | 2018-02-22 | 光起電力セルのための光学シールド |
Country Status (9)
Country | Link |
---|---|
US (1) | US11271127B2 (ja) |
EP (1) | EP3586373A4 (ja) |
JP (1) | JP2020508581A (ja) |
KR (1) | KR20190120301A (ja) |
CN (1) | CN110462844A (ja) |
AU (1) | AU2018223261B2 (ja) |
BR (1) | BR112019017450A2 (ja) |
CA (1) | CA3054259C (ja) |
WO (1) | WO2018154185A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3921872A4 (en) * | 2019-01-31 | 2022-12-28 | OY ICS Intelligent Control Systems Ltd | OPTICAL STRUCTURE FOR SOLAR APPLICATIONS, AND METHOD OF FABRICATION |
CN111463304A (zh) * | 2020-05-27 | 2020-07-28 | 凤阳硅谷智能有限公司 | 光伏组件和用于其的局部聚光光伏玻璃 |
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US5076857A (en) * | 1990-08-27 | 1991-12-31 | Spire Corporation | Photovoltaic cell and process |
JP2009206494A (ja) * | 2008-01-31 | 2009-09-10 | Sanyo Electric Co Ltd | 太陽電池モジュール |
US20120103394A1 (en) * | 2008-05-09 | 2012-05-03 | Kasra Khazeni | Solar Energy Collection Devices |
US20120229911A1 (en) * | 2010-07-13 | 2012-09-13 | E. I. Du Pont De Nemours And Company | Optical element having internal inclusions configured for maximum conversion efficiency |
US20140041719A1 (en) * | 2012-08-13 | 2014-02-13 | International Business Machines Corporation | Manufacture of a Solar Module |
WO2014034006A1 (ja) * | 2012-09-03 | 2014-03-06 | 三菱電機株式会社 | 太陽電池素子および太陽電池モジュール |
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DE19522215C2 (de) | 1995-06-20 | 1999-12-02 | Nikolaus Laing | Schwimmendes Solarkraftwerk und Verfahren zu seinem Betrieb |
US20090218651A1 (en) | 2008-02-28 | 2009-09-03 | Sunlight Photonics Inc. | Composite substrates for thin film electro-optical devices |
JP5094509B2 (ja) | 2008-03-31 | 2012-12-12 | 三洋電機株式会社 | 太陽電池モジュール |
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CN102339885A (zh) * | 2010-07-14 | 2012-02-01 | 旺能光电(吴江)有限公司 | 太阳能模块及其制作方法 |
TWI533460B (zh) | 2011-01-28 | 2016-05-11 | 國立中山大學 | 光導引元件及使用其之染料敏化太陽能電池結構 |
US9477033B2 (en) * | 2013-04-23 | 2016-10-25 | Lumenco, Llc | Multi-layered waveguide for capturing solar energy |
-
2018
- 2018-02-22 JP JP2019545787A patent/JP2020508581A/ja active Pending
- 2018-02-22 US US16/487,698 patent/US11271127B2/en active Active
- 2018-02-22 KR KR1020197027742A patent/KR20190120301A/ko active IP Right Grant
- 2018-02-22 CN CN201880020190.XA patent/CN110462844A/zh active Pending
- 2018-02-22 AU AU2018223261A patent/AU2018223261B2/en active Active
- 2018-02-22 CA CA3054259A patent/CA3054259C/en active Active
- 2018-02-22 EP EP18757710.1A patent/EP3586373A4/en active Pending
- 2018-02-22 BR BR112019017450A patent/BR112019017450A2/pt unknown
- 2018-02-22 WO PCT/FI2018/050132 patent/WO2018154185A1/en unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5076857A (en) * | 1990-08-27 | 1991-12-31 | Spire Corporation | Photovoltaic cell and process |
JP2009206494A (ja) * | 2008-01-31 | 2009-09-10 | Sanyo Electric Co Ltd | 太陽電池モジュール |
US20120103394A1 (en) * | 2008-05-09 | 2012-05-03 | Kasra Khazeni | Solar Energy Collection Devices |
US20120229911A1 (en) * | 2010-07-13 | 2012-09-13 | E. I. Du Pont De Nemours And Company | Optical element having internal inclusions configured for maximum conversion efficiency |
US20140041719A1 (en) * | 2012-08-13 | 2014-02-13 | International Business Machines Corporation | Manufacture of a Solar Module |
WO2014034006A1 (ja) * | 2012-09-03 | 2014-03-06 | 三菱電機株式会社 | 太陽電池素子および太陽電池モジュール |
Also Published As
Publication number | Publication date |
---|---|
EP3586373A4 (en) | 2021-01-06 |
BR112019017450A2 (pt) | 2020-04-07 |
CN110462844A (zh) | 2019-11-15 |
EP3586373A1 (en) | 2020-01-01 |
AU2018223261A1 (en) | 2019-10-03 |
RU2019129142A3 (ja) | 2021-06-08 |
KR20190120301A (ko) | 2019-10-23 |
RU2019129142A (ru) | 2021-03-23 |
US20200058816A1 (en) | 2020-02-20 |
US11271127B2 (en) | 2022-03-08 |
CA3054259A1 (en) | 2018-08-30 |
WO2018154185A1 (en) | 2018-08-30 |
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CA3054259C (en) | 2023-04-04 |
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