JP2020505766A - 炭化珪素上に絶縁層を製造する方法 - Google Patents
炭化珪素上に絶縁層を製造する方法 Download PDFInfo
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- JP2020505766A JP2020505766A JP2019538335A JP2019538335A JP2020505766A JP 2020505766 A JP2020505766 A JP 2020505766A JP 2019538335 A JP2019538335 A JP 2019538335A JP 2019538335 A JP2019538335 A JP 2019538335A JP 2020505766 A JP2020505766 A JP 2020505766A
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- insulating layer
- silicon carbide
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- hydrogen
- silicon oxide
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
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- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Manufacturing & Machinery (AREA)
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
301 絶縁層の第1部分を形成するステップ
302 第1部分の上に誘電体膜を堆積させるステップ
400 自然酸化物層
d シリコン酸化層の厚さ
800 洗浄するステップ
801 紫外線を照射した表面を化学溶液に浸漬するステップ
802 誘電体膜を堆積させるステップ
803 アニーリングするステップ
804 更なるステップ
La ランプ
LS 光源
O2 酸素
O3 オゾン
700 絶縁層の第1部分
SiC 炭化珪素
LX レーザモジュール
O 光学素子
900 炭化珪素基板
901 シリコン酸化膜
905 反応チャンバの壁
906 H2ガス入口
907 UVランプ
910 タングステンワイヤ
950 炭化珪素基板
951 シリコン酸化膜
955 反応チャンバの壁
956 H2ガス入口
957 UVランプ
960 銅アンテナ
961 石英管
Claims (10)
- 炭化珪素(SiC)上に絶縁層を製造する方法であって、
前記炭化珪素(SiC)の表面を準備するステップと、
前記絶縁層の第1部分(700、901、951)を、前記表面上に摂氏400度未満の温度で形成するステップと、
前記絶縁層の第2部分を、前記第1部分の上に誘電体膜を堆積させることによって形成するステップと、
前記絶縁層の前記第1部分(700、901、951)を形成する間及び/又は形成した後に、光源(LS)を使用し、450nm未満の波長及び/又は450nmと等しい波長の光で、前記表面を照射するステップと、を含む方法。 - 請求項1に記載の方法であって、波長は380nmと等しい及び/又は380nm未満であることを特徴とする方法。
- 請求項1又は2に記載の方法であって、前記光源(LS)が少なくとも1つのランプ(La)及び/又はレーザ(LX)及び/又は発光ダイオード及び/又はプラズマを含むことを特徴とする方法。
- 請求項1、2、又は3に記載の方法であって、前記光源が放出する前記光の、前記表面上の光子の密度が、前記表面上の炭素原子の密度より高いことを特徴とする方法。
- 請求項3又は4に記載の方法であって、前記絶縁層の前記第1部分(700、901、951)としての酸化珪素を、前記表面をオゾン(O3)に暴露することによって形成し、前記オゾンが、少なくとも部分的に、前記炭化珪素(SiC)の前記表面を照射する前記光によって酸素(O2)から発生することを特徴とする方法。
- 請求項5に記載の方法であって、ガス状の前記酸素と共に、窒素酸化物を供給することを特徴とする方法。
- 請求項1又は2に記載の方法であって、前記絶縁層の前記第1部分(700、901、951)と前記第2部分の形成の間に、少なくとも水素を含む雰囲気を使用して、前記光の照射を行うことを特徴とする方法。
- 請求項7に記載の方法であって、前記水素を、少なくとも分子及び/又はイオン及び/又はラジカルとして、供給することを特徴とする方法。
- 請求項8に記載の方法であって、前記イオン及び/又は前記ラジカルは、プラズマ及び/又は触媒分解を使用して供給することを特徴とする方法。
- 請求項9に記載の方法であって、前記プラズマによって発生した光を、光源(LS)として機能させ、前記絶縁層の前記第1部分(700、901、951)を照射することを特徴とする方法。
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PCT/EP2017/083988 WO2018134024A1 (en) | 2017-01-17 | 2017-12-21 | Method of manufacturing an insulation layer on silicon carbide |
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CN109801840A (zh) * | 2018-12-04 | 2019-05-24 | 中国科学院微电子研究所 | 一种改善SiC器件界面特征的方法及SiC器件 |
US11844172B2 (en) | 2019-10-16 | 2023-12-12 | Kla Corporation | System and method for vacuum ultraviolet lamp assisted ignition of oxygen-containing laser sustained plasma sources |
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