JP2020178028A - 受光装置および光受信器 - Google Patents
受光装置および光受信器 Download PDFInfo
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- JP2020178028A JP2020178028A JP2019079045A JP2019079045A JP2020178028A JP 2020178028 A JP2020178028 A JP 2020178028A JP 2019079045 A JP2019079045 A JP 2019079045A JP 2019079045 A JP2019079045 A JP 2019079045A JP 2020178028 A JP2020178028 A JP 2020178028A
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- 230000003287 optical effect Effects 0.000 title claims description 50
- 239000000758 substrate Substances 0.000 claims abstract description 94
- 239000004065 semiconductor Substances 0.000 claims description 59
- 230000031700 light absorption Effects 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 5
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 238000005530 etching Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Chemical compound BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
- G02B5/0858—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal the reflecting layers comprising a single metallic layer with one or more dielectric layers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4249—Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres
- G02B6/425—Optical features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4215—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical elements being wavelength selective optical elements, e.g. variable wavelength optical modules or wavelength lockers
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
はじめに、本発明の実施の形態1に係る受光装置について、図1A,図1Bを参照して説明する。なお、図1Bは、図1Aのaa’線の断面を示している。
次に、本発明の実施の形態2に係る受光装置について、図3A,図3B,図3Cを参照して説明する。なお、図3Bは、図3Aのbb’線の断面を示し、図3Cは、図3Aのcc’線の断面を示している。
Claims (5)
- 基板の上に1列に配列された複数の受光素子と、
前記複数の受光素子の列を挟んで配列方向に延在して前記基板に形成された第1反射面および第2反射面と
を備え、
前記複数の受光素子の各々は、
前記基板の上に形成された第1導電型の半導体からなる第1半導体層と、
前記第1半導体層の上に形成された半導体からなる光吸収層と、
前記光吸収層の上に形成された第2導電型の半導体からなる第2半導体層と、
前記第2半導体層の上に形成された反射層と、
前記第2半導体層に接続する第1電極と、
前記第1半導体層に接続する第2電極と
を備える裏面入射型フォトダイオードから構成され、
前記第1反射面および前記第2反射面の各々は、前記受光素子が形成されている前記基板の主表面から前記基板の裏面側にかけて形成された1つの平面を形成する斜面から構成され、
前記受光素子が形成されている領域の前記基板の主表面と、前記第1反射面および前記第2反射面の各々とのなす角は、鈍角とされている
ことを特徴とする受光装置。 - 基板の上に1列に配列された複数の受光素子と、
前記複数の受光素子の配列方向に延在して前記複数の受光素子の列の側方の前記基板に形成された反射面と、
前記配列方向に隣り合う前記複数の受光素子の間の前記基板に形成された逆メサ溝と
を備え、
前記複数の受光素子の各々は、
前記基板の上に形成された第1導電型の半導体からなる第1半導体層と、
前記第1半導体層の上に形成された半導体からなる光吸収層と、
前記光吸収層の上に形成された第2導電型の半導体からなる第2半導体層と、
前記第2半導体層の上に形成された反射層と、
前記第2半導体層に接続する第1電極と、
前記第1半導体層に接続する第2電極と
を備える裏面入射型フォトダイオードから構成され、
前記反射面は、前記受光素子が形成されている前記基板の主表面から前記基板の裏面側にかけて形成された1つの平面を形成する斜面から構成され、
前記受光素子が形成されている領域の前記基板の主表面と前記反射面とのなす角は、鈍角とされ、
前記逆メサ溝の前記配列方向に垂直な断面は、前記逆メサ溝の底面に行くほど幅拡の形状を有する
ことを特徴とする受光装置。 - 請求項1または2記載の受光装置において、
前記第1電極は、金属から構成されて前記第2半導体層の上に形成され、
前記反射層は、前記第1電極から構成されている
ことを特徴とする受光装置。 - 請求項1または2記載の受光装置において、
前記反射層は、前記第2半導体層の上に誘電体層を介して形成された金属層から構成されていることを特徴とする受光装置。 - 請求項1〜4のいずれか1項に記載の受光装置と、
前記基板の側から前記第1反射面に向けて入射する光が出射される光部品と
を備え、
前記光部品は、前記基板の側から前記第1反射面に向けて入射し、前記第1反射面で反射して前記光吸収層を通過し、前記反射層で反射して前記光吸収層を通過し、前記第2反射面で反射して前記基板の側から出射する光の光路以外に配置されている
ことを特徴とする光受信器。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019079045A JP7163858B2 (ja) | 2019-04-18 | 2019-04-18 | 受光装置 |
US17/436,957 US11862739B2 (en) | 2019-04-18 | 2020-04-03 | Photoreceiver and optical receiver having an inclined surface |
PCT/JP2020/015362 WO2020213436A1 (ja) | 2019-04-18 | 2020-04-03 | 受光装置および光受信器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019079045A JP7163858B2 (ja) | 2019-04-18 | 2019-04-18 | 受光装置 |
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Publication Number | Publication Date |
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JP2020178028A true JP2020178028A (ja) | 2020-10-29 |
JP7163858B2 JP7163858B2 (ja) | 2022-11-01 |
Family
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JP2019079045A Active JP7163858B2 (ja) | 2019-04-18 | 2019-04-18 | 受光装置 |
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US (1) | US11862739B2 (ja) |
JP (1) | JP7163858B2 (ja) |
WO (1) | WO2020213436A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7212983B1 (ja) * | 2022-03-04 | 2023-01-26 | 株式会社京都セミコンダクター | 半導体受光素子 |
Citations (10)
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JPS62282470A (ja) * | 1987-04-17 | 1987-12-08 | Mitsubishi Electric Corp | メサ形半導体装置 |
JPS631062A (ja) * | 1986-06-20 | 1988-01-06 | Nec Corp | 並列光信号処理半導体素子 |
JPS63304664A (ja) * | 1987-06-03 | 1988-12-12 | Fujitsu Ltd | 集積型受光装置 |
JPH09307134A (ja) * | 1996-05-13 | 1997-11-28 | Fujitsu Ltd | 受光素子及びその光モジュール並びに光ユニット |
JP2000150923A (ja) * | 1998-11-12 | 2000-05-30 | Nippon Telegr & Teleph Corp <Ntt> | 裏面入射型受光装置およびその作製方法 |
JP2010118412A (ja) * | 2008-11-11 | 2010-05-27 | Panasonic Corp | 固体撮像装置及びその製造方法 |
JP2011151421A (ja) * | 2011-04-25 | 2011-08-04 | Sony Corp | 固体撮像素子および固体撮像素子の製造方法及び画像撮影装置 |
WO2011155230A1 (ja) * | 2010-06-08 | 2011-12-15 | 京セミ株式会社 | 受光素子アレイ |
JP2014003083A (ja) * | 2012-06-15 | 2014-01-09 | Mitsubishi Electric Corp | フォトダイオードアレイ |
WO2015097764A1 (ja) * | 2013-12-25 | 2015-07-02 | 株式会社日立製作所 | 受光装置及びそれを用いた光送受信システム |
Family Cites Families (1)
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US5721429A (en) * | 1996-07-23 | 1998-02-24 | Hughes Electronics | Self-focusing detector pixel structure having improved sensitivity |
-
2019
- 2019-04-18 JP JP2019079045A patent/JP7163858B2/ja active Active
-
2020
- 2020-04-03 US US17/436,957 patent/US11862739B2/en active Active
- 2020-04-03 WO PCT/JP2020/015362 patent/WO2020213436A1/ja active Application Filing
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS631062A (ja) * | 1986-06-20 | 1988-01-06 | Nec Corp | 並列光信号処理半導体素子 |
JPS62282470A (ja) * | 1987-04-17 | 1987-12-08 | Mitsubishi Electric Corp | メサ形半導体装置 |
JPS63304664A (ja) * | 1987-06-03 | 1988-12-12 | Fujitsu Ltd | 集積型受光装置 |
JPH09307134A (ja) * | 1996-05-13 | 1997-11-28 | Fujitsu Ltd | 受光素子及びその光モジュール並びに光ユニット |
JP2000150923A (ja) * | 1998-11-12 | 2000-05-30 | Nippon Telegr & Teleph Corp <Ntt> | 裏面入射型受光装置およびその作製方法 |
JP2010118412A (ja) * | 2008-11-11 | 2010-05-27 | Panasonic Corp | 固体撮像装置及びその製造方法 |
WO2011155230A1 (ja) * | 2010-06-08 | 2011-12-15 | 京セミ株式会社 | 受光素子アレイ |
JP2011151421A (ja) * | 2011-04-25 | 2011-08-04 | Sony Corp | 固体撮像素子および固体撮像素子の製造方法及び画像撮影装置 |
JP2014003083A (ja) * | 2012-06-15 | 2014-01-09 | Mitsubishi Electric Corp | フォトダイオードアレイ |
WO2015097764A1 (ja) * | 2013-12-25 | 2015-07-02 | 株式会社日立製作所 | 受光装置及びそれを用いた光送受信システム |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7212983B1 (ja) * | 2022-03-04 | 2023-01-26 | 株式会社京都セミコンダクター | 半導体受光素子 |
WO2023166709A1 (ja) * | 2022-03-04 | 2023-09-07 | 株式会社京都セミコンダクター | 半導体受光素子 |
Also Published As
Publication number | Publication date |
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JP7163858B2 (ja) | 2022-11-01 |
US11862739B2 (en) | 2024-01-02 |
WO2020213436A1 (ja) | 2020-10-22 |
US20220173259A1 (en) | 2022-06-02 |
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