JP2020155770A - Thermoelectric module - Google Patents

Thermoelectric module Download PDF

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JP2020155770A
JP2020155770A JP2020020580A JP2020020580A JP2020155770A JP 2020155770 A JP2020155770 A JP 2020155770A JP 2020020580 A JP2020020580 A JP 2020020580A JP 2020020580 A JP2020020580 A JP 2020020580A JP 2020155770 A JP2020155770 A JP 2020155770A
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metal substrate
hole
electrodes
thermoelectric module
region
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チョン，ソンチェ
Seong Jae Jeon
キム，ソンチョル
SeongCheol KIM
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction

Abstract

To provide a coupling structure of a thermoelectric module.SOLUTION: A thermoelectric module includes: a first metal substrate 110 including a first through-hole; a first insulating layer disposed on the first metal substrate; a first electrode part disposed on the first insulating layer and including a plurality of first electrodes 130; a plurality of P-type thermoelectric legs 140 and a plurality of N-type thermoelectric legs disposed on the first electrode part; a second electrode part disposed on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs and including a plurality of second electrodes 160; a second insulating layer disposed on the second electrode part; and a second metal substrate 180 disposed on the second insulating layer and including a second through-hole. The first metal substrate includes an effective region A1 in which the first electrode part is disposed and a peripheral region A2 formed outside the effective region. The second metal substrate includes an effective region B1 in which the second electrode part is disposed and a peripheral region B2 formed outside the effective region.SELECTED DRAWING: Figure 1

Description

本発明は熱電モジュールに関し、より詳細には熱電モジュールの締結構造に関する。 The present invention relates to a thermoelectric module, and more particularly to a fastening structure of the thermoelectric module.

熱電現象は材料内部の電子（ｅｌｅｃｔｒｏｎ）と正孔（ｈｏｌｅ）の移動によって発生する現象であって、熱と電気間の直接的なエネルギー変換を意味する。 The thermoelectric phenomenon is a phenomenon generated by the movement of electrons (electrons) and holes (holes) inside a material, and means a direct energy conversion between heat and electricity.

熱電素子は熱電現象を利用する素子を総称し、Ｐ型熱電材料とＮ型熱電材料を金属電極間に接合させてＰＮ接合対を形成する構造を有する。 A thermoelectric element is a general term for an element that utilizes a thermoelectric phenomenon, and has a structure in which a P-type thermoelectric material and an N-type thermoelectric material are bonded between metal electrodes to form a PN junction pair.

熱電素子は、電気抵抗の温度変化を利用する素子、温度差によって起電力が発生する現象であるゼーベック効果を利用する素子、電流による吸熱または発熱が発生する現象であるペルティエ効果を利用する素子などに区分され得る。 Thermoelectric elements include elements that utilize temperature changes in electrical resistance, elements that utilize the Seebeck effect, which is a phenomenon in which electromotive force is generated due to temperature differences, and elements that utilize the Peltier effect, which is a phenomenon in which heat absorption or heat generation is generated by electric current. Can be divided into.

熱電素子は家電製品、電子部品、通信用部品などに多様に適用されている。例えば、熱電素子は冷却用装置、温熱用装置、発電用装置などに適用され得る。これに伴い、熱電素子の熱電性能に対する要求はますます高くなっている。 Thermoelectric elements are widely applied to home appliances, electronic parts, communication parts, and the like. For example, a thermoelectric element can be applied to a cooling device, a heating device, a power generation device, and the like. Along with this, the demand for thermoelectric performance of thermoelectric elements is becoming higher and higher.

熱電素子は基板、電極および熱電レッグを含み、上部基板と下部基板の間に複数の熱電レッグがアレイ形態に配置され、複数の熱電レッグと上部基板の間に複数の上部電極が配置され、複数の熱電レッグと下部基板の間に複数の下部電極が配置される。 The thermoelectric element includes a substrate, electrodes and thermoelectric legs, with a plurality of thermoelectric legs arranged in an array form between the upper substrate and the lower substrate, and a plurality of upper electrodes arranged between the plurality of thermoelectric legs and the upper substrate. A plurality of lower electrodes are arranged between the thermoelectric leg and the lower substrate.

熱電素子の上部基板と下部基板のうち一つは高温部となり、他の一つは低温部となる。この時、高温部の基板と低温部の基板の間に温度差が発生することにより、高温部の基板に熱変形が発生して基板の接合界面に応力が集中する現象が発生し得る。これによって接合界面部分に剥離およびクラックが発生して製品の品質を落とし得る。 One of the upper substrate and the lower substrate of the thermoelectric element is a high temperature part, and the other one is a low temperature part. At this time, a temperature difference occurs between the substrate in the high temperature portion and the substrate in the low temperature portion, so that thermal deformation may occur in the substrate in the high temperature portion and stress may be concentrated at the bonding interface of the substrates. As a result, peeling and cracking may occur at the joint interface portion, which may reduce the quality of the product.

特に、高温部の基板の縁は中央部に比べて熱変形量が高い部分であって、高温部の基板と低温部の基板の縁を締結する場合、熱変形によって接合界面部分に応力の集中が加重され得る。 In particular, the edge of the substrate in the high temperature portion is a portion where the amount of thermal deformation is higher than that in the central portion, and when the edge of the substrate in the high temperature portion and the substrate in the low temperature portion are fastened, stress is concentrated on the bonding interface portion due to thermal deformation. Can be weighted.

本発明が達成しようとする技術的課題は熱電モジュールの締結構造を提供することである。 The technical problem to be achieved by the present invention is to provide a fastening structure for a thermoelectric module.

本発明の一実施例に係る熱電モジュールは、第１貫通ホールを含む第１金属基板；前記第１金属基板上に配置された第１絶縁層；前記第１絶縁層上に配置され複数の第１電極を含む第１電極部；前記第１電極部上に配置された複数のＰ型およびＮ型熱電レッグ；前記複数のＰ型およびＮ型熱電レッグ上に配置され複数の第２電極を含む第２電極部；前記第２電極部上に配置された第２絶縁層；および前記第２絶縁層上に配置され第２貫通ホールを含む第２金属基板；を含み、前記第１金属基板は第１電極部が配置された有効領域および前記有効領域の外郭に形成された外郭領域を含み、前記第２金属基板は第２電極部が配置された有効領域および前記有効領域の外郭に形成された外郭領域を含み、前記第１貫通ホールは前記第１金属基板の前記有効領域内に形成され 、前記第２貫通ホールは前記第２金属基板の前記有効領域内に形成され、前記第１貫通ホールおよび前記第２貫通ホールは互いに対応する位置に形成される。 The thermoelectric module according to an embodiment of the present invention includes a first metal substrate including a first through hole; a first insulating layer arranged on the first metal substrate; a plurality of first insulating layers arranged on the first insulating layer. A first electrode portion including one electrode; a plurality of P-type and N-type thermoelectric legs arranged on the first electrode portion; a plurality of second electrodes arranged on the plurality of P-type and N-type thermoelectric legs. The first metal substrate includes a second electrode portion; a second insulating layer arranged on the second electrode portion; and a second metal substrate arranged on the second insulating layer and including a second through hole; The second metal substrate is formed in the effective region in which the second electrode portion is arranged and the outer shell of the effective region, including the effective region in which the first electrode portion is arranged and the outer shell region formed in the outer shell of the effective region. The first through hole is formed in the effective region of the first metal substrate, the second through hole is formed in the effective region of the second metal substrate, and the first through hole is formed. The hole and the second through hole are formed at positions corresponding to each other.

前記第１貫通ホールおよび前記第２貫通ホールを通過して前記第１金属基板と前記第２金属基板を固定する締結部材をさらに含むことができる。 Further, a fastening member that passes through the first through hole and the second through hole to fix the first metal substrate and the second metal substrate can be included.

前記第２金属基板は互いに離隔した複数の第２金属基板を含み、各第２金属基板は少なくとも一つの第２貫通ホールを含むことができる。 The second metal substrate includes a plurality of second metal substrates separated from each other, and each second metal substrate can include at least one second through hole.

互いに離隔した複数の第２金属基板間に絶縁部材が配置され得る。 Insulating members may be arranged between a plurality of second metal substrates separated from each other.

前記絶縁部材の厚さは前記複数の第２金属基板の厚さより小さくてもよい。 The thickness of the insulating member may be smaller than the thickness of the plurality of second metal substrates.

前記第１金属基板に配置された複数の第１電極の一部の長さ方向は残りの一部の長さ方向と異なり、前記第２金属基板に配置された複数の第２電極の一部の長さ方向は残りの一部の長さ方向と異なり、前記長さ方向は各電極の長幅方向である得る。 The length direction of a part of the plurality of first electrodes arranged on the first metal substrate is different from the length direction of the remaining part, and a part of the plurality of second electrodes arranged on the second metal substrate. The length direction of is different from the length direction of the remaining part, and the length direction may be the length direction of each electrode.

前記第１電極部のうち縁領域を除いた複数の第１電極のうち少なくとも二つの電極は長さ方向が第１方向に垂直な第２方向に配置され、残りの電極は長さ方向が前記第１方向に配置され、 前記第２電極部のうち縁領域を除いた複数の第２電極のうち少なくとも二つの電極は長さ方向が第１方向に垂直な第２方向に配置され、残りの電極は長さ方向が前記第１方向に配置され得る。 At least two of the plurality of first electrodes of the first electrode portion excluding the edge region are arranged in a second direction whose length direction is perpendicular to the first direction, and the remaining electrodes are said to have a length direction. At least two of the plurality of second electrodes arranged in the first direction and excluding the edge region of the second electrode portion are arranged in the second direction whose length direction is perpendicular to the first direction, and the rest. The electrodes may be arranged in the first direction in length.

前記縁領域を除いた複数の第１電極のうち長さ方向が前記第２方向に配置される第１電極の個数は２の倍数個であり、前記縁領域を除いた複数の第２電極のうち長さ方向が前記第２方向に配置される第２電極の個数は２の倍数個であり得る。 Of the plurality of first electrodes excluding the edge region, the number of the first electrodes arranged in the second direction in the length direction is a multiple of 2, and of the plurality of second electrodes excluding the edge region. The number of the second electrodes whose length direction is arranged in the second direction can be a multiple of 2.

前記複数の第２電極のうち前記縁領域で互いに対向する二つの列または二つの行に配置された第２電極の少なくとも一部は長さ方向が前記第２方向に配置され得る。 Of the plurality of second electrodes, at least a part of the second electrodes arranged in two columns or two rows facing each other in the edge region may be arranged in the second direction in the length direction.

前記第１金属基板は前記第１貫通ホールと最も隣接し互いに隣り合うように配置される第１電極の面をつなぐ仮想の線がなす空間である第１ホール配置領域を含み、前記第２金属基板は前記第２貫通ホールと最も隣接し互いに隣り合うように配置される第２電極の面をつなぐ仮想の線がなす空間である第２ホール配置領域を含み、前記第１ホール配置領域に隣接した少なくとも一つの第１電極は長さ方向が前記第２方向に配置され、前記第２ホール配置領域に隣接した少なくとも一つの第２電極は長さ方向が前記第２方向に配置され得る。 The first metal substrate includes a first hole arrangement region which is a space formed by virtual lines connecting the surfaces of the first electrodes arranged so as to be adjacent to each other most adjacent to the first through hole, and includes the second metal. The substrate includes a second hole arrangement area, which is a space formed by virtual lines connecting the surfaces of the second electrodes arranged so as to be adjacent to each other most adjacent to the second through hole, and is adjacent to the first hole arrangement area. The at least one first electrode may be arranged in the second direction in the length direction, and the at least one second electrode adjacent to the second hole arrangement region may be arranged in the second direction in the length direction.

前記少なくとも一つの第１電極は前記第１ホール配置領域を定義する仮想の線から延びた延長線がなす仮想の空間と少なくとも一部が重なるように配置され、前記少なくとも一つの第２電極は前記第２ホール配置領域を定義する仮想の線から延びた延長線がなす仮想の空間と少なくとも一部が重なるように配置され得る。 The at least one first electrode is arranged so as to overlap at least a part of the virtual space formed by the extension line extending from the virtual line defining the first hole arrangement region, and the at least one second electrode is said. It may be arranged so as to overlap at least a part of the virtual space formed by the extension line extending from the virtual line defining the second hole arrangement area.

前記第１貫通ホールは複数個を含み、前記第１ホール配置領域は前記複数個の前記第１貫通ホール周辺にそれぞれ形成され、前記第２貫通ホールは複数個を含み、前記第２ホール配置領域は前記複数個の前記第２貫通ホール周辺にそれぞれ形成され得る。 The first through hole includes a plurality of the first through holes, the first hole arrangement area is formed around the plurality of the first through holes, and the second through hole includes a plurality of the first through holes. Can be formed around the plurality of second through holes, respectively.

前記複数個の前記第１貫通ホールおよび前記複数個の前記第２貫通ホールは互いに対応する位置に形成され得る。 The plurality of the first through holes and the plurality of the second through holes may be formed at positions corresponding to each other.

前記第１金属基板の外郭領域に配置された第３貫通ホールをさらに含むことができる。 A third through hole arranged in the outer region of the first metal substrate can be further included.

前記第１金属基板の面積に対する前記第２金属基板の面積の比は０．５〜０．９５であり得る。 The ratio of the area of the second metal substrate to the area of the first metal substrate can be 0.5 to 0.95.

前記締結部材と隣接して配置された絶縁挿入部材をさらに含むことができる。 Insulation insertion members arranged adjacent to the fastening member may be further included.

前記第１貫通ホールの直径と前記第２貫通ホールの直径は互いに異なり得る。 The diameter of the first through hole and the diameter of the second through hole can be different from each other.

前記第２貫通ホールの直径は前記第１貫通ホールの直径の１．１倍〜２．０倍であり得る。 The diameter of the second through hole can be 1.1 to 2.0 times the diameter of the first through hole.

前記絶縁挿入部材の一部は前記第２貫通ホール内に配置され得る。 A part of the insulating insertion member may be arranged in the second through hole.

前記第１金属基板と前記第１絶縁層間に配置された第３絶縁層をさらに含むことができる。 A third insulating layer arranged between the first metal substrate and the first insulating layer can be further included.

本発明の実施例によると、高温部の基板および低温部の基板の有効領域の一部を占有するように互いに締結させることによって、高温部の基板の熱変形を減らし、接合部位に応力が集中することを防止し、熱電モジュールの高温での信頼性と耐久性を高めることができる。 According to the embodiment of the present invention, by fastening the substrate in the high temperature portion and the substrate in the low temperature portion so as to occupy a part of the effective region, the thermal deformation of the substrate in the high temperature portion is reduced and the stress is concentrated on the joint portion. This can be prevented and the reliability and durability of the thermoelectric module at high temperatures can be improved.

本発明の実施例によると、それぞれのホール配置領域が形成された制限された空間内で、空間を無駄に使うことなく複数のＰ型およびＮ型熱電レッグの最適配置を可能にして、熱電モジュールの発電性能を維持することができる。 According to the embodiment of the present invention, the thermoelectric module enables the optimum arrangement of a plurality of P-type and N-type thermoelectric legs in a limited space in which each hole arrangement area is formed without wasting space. Power generation performance can be maintained.

本発明の第１実施例に係る熱電モジュールの側面図。The side view of the thermoelectric module which concerns on 1st Example of this invention. 本発明の第１実施例に係る熱電モジュールの斜視図。The perspective view of the thermoelectric module which concerns on 1st Example of this invention. 本発明の第１実施例に係る熱電モジュールの分解斜視図。An exploded perspective view of the thermoelectric module according to the first embodiment of the present invention. 本発明の第１実施例に係る熱電モジュールが冷却部に設置される状態を図示した側面図。The side view which illustrated the state which the thermoelectric module which concerns on 1st Embodiment of this invention is installed in a cooling part. 本発明の第２実施例に係る熱電モジュールの斜視図。The perspective view of the thermoelectric module which concerns on 2nd Embodiment of this invention. 本発明の第２実施例に係る熱電モジュールが冷却部に設置される状態を図示した側面図。A side view illustrating a state in which the thermoelectric module according to the second embodiment of the present invention is installed in the cooling unit. 複数の第１金属基板と第２金属基板上に第１電極と第２電極を配置する方法に対する第１例を図示した図面。The drawing which illustrated the first example with respect to the method of arranging the 1st electrode and the 2nd electrode on a plurality of 1st metal substrate and 2nd metal substrate. 図７で示した複数の第１電極と複数の第２電極を重ねた状態を図示した図面。A drawing illustrating a state in which a plurality of first electrodes and a plurality of second electrodes shown in FIG. 7 are overlapped. 第１金属基板と第２金属基板上に第１電極と第２電極を配置する方法に対する実施例を図示した図面。The drawing which illustrated the Example for the method of arranging the 1st electrode and the 2nd electrode on the 1st metal substrate and the 2nd metal substrate. 第１金属基板と第２金属基板上に第１電極と第２電極を配置する方法に対する実施例を図示した図面。The drawing which illustrated the Example for the method of arranging the 1st electrode and the 2nd electrode on the 1st metal substrate and the 2nd metal substrate. 第１金属基板と第２金属基板上に第１電極と第２電極を配置する方法に対する実施例を図示した図面。The drawing which illustrated the Example for the method of arranging the 1st electrode and the 2nd electrode on the 1st metal substrate and the 2nd metal substrate. 第１金属基板と第２金属基板上に第１電極と第２電極を配置する方法に対する実施例を図示した図面。The drawing which illustrated the Example for the method of arranging the 1st electrode and the 2nd electrode on the 1st metal substrate and the 2nd metal substrate. 本発明の実施例に係る発電モジュールの締結構造を図示する図面。The drawing which illustrates the fastening structure of the power generation module which concerns on embodiment of this invention.

以下、添付された図面を参照して本発明の好ましい実施例を詳細に説明する。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

ただし、本発明の技術思想は説明される一部の実施例に限定されず、互いに異なる多様な形態で具現され得、本発明の技術思想の範囲内であれば、実施例間にその構成要素の一つ以上を選択的に結合、置換して使うことができる。 However, the technical idea of the present invention is not limited to a part of the examples to be explained, and can be embodied in various forms different from each other. One or more of can be selectively combined and replaced.

また、本発明の実施例で使われる用語（技術および科学的用語を含む）は、明白に特に定義されない限り、本発明が属する技術分野で通常の知識を有する者に一般的に理解され得る意味で解釈され得、辞書に定義された用語のように一般的に使われる用語は関連技術の文脈上の意味を考慮してその意味を解釈できるであろう。 In addition, the terms used in the examples of the present invention (including technical and scientific terms) have meanings that can be generally understood by a person having ordinary knowledge in the technical field to which the present invention belongs, unless explicitly defined in particular. Commonly used terms, such as those defined in the dictionary, could be interpreted in light of the contextual meaning of the relevant technology.

また、本発明の実施例で使われた用語は実施例を説明するためのものであって、発明を制限しようとするものではない。 In addition, the terms used in the examples of the present invention are for explaining the examples, and are not intended to limit the invention.

本明細書で、単数型は文面で特に言及しない限り複数型も含むことができ、「Ａおよび（と）Ｂ、Ｃのうち少なくとも一つ（または一つ以上）」と記載される場合、Ａ、Ｂ、Ｃで組み合わせられるすべての組み合わせのうち一つ以上を含むことができる。 In the present specification, the singular type may also include the plural type unless otherwise specified in the text, and when it is described as "at least one (or one or more) of A and (and) B, C", A. , B, C can include one or more of all combinations.

また、本発明の実施例の構成要素の説明において、第１、第２、Ａ、Ｂ、（ａ）、（ｂ）等の用語を使うことができる。 In addition, terms such as first, second, A, B, (a), and (b) can be used in the description of the components of the examples of the present invention.

このような用語はその構成要素を他の構成要素と区別するためのものに過ぎず、その用語によって該当構成要素の本質や順番または順序などに限定されない。 Such terms are merely for distinguishing a component from other components, and the term is not limited to the essence, order, or order of the component.

そして、ある構成要素が他の構成要素に「連結」、「結合」または「接続」されると記載された場合、その構成要素はその他の構成要素に直接的に連結、結合または接続される場合だけでなく、その構成要素とその他の構成要素の間にあるさらに他の構成要素によって「連結」、「結合」または「接続」される場合も含み得る。 And when one component is described as being "connected," "joined," or "connected" to another component, that component is directly connected, combined, or connected to another component. It may also include cases where it is "connected," "joined," or "connected" by yet another component between that component and the other component.

また、各構成要素の「上（うえ）または下（した）」に形成または配置されると記載される場合、上（うえ）または下（した）は二つの構成要素が互いに直接接触する場合だけでなく、一つ以上のさらに他の構成要素が二つの構成要素の間に形成または配置される場合も含む。また、「上（うえ）または下（した）」と表現される場合、一つの構成要素を基準として上側方向だけでなく下側方向の意味も含み得る。 Also, if it is stated that it is formed or placed "above" or "below" each component, then above or below is only when the two components are in direct contact with each other. It also includes the case where one or more other components are formed or arranged between two components. Further, when the expression "upper" or "lower" is used, it may include not only the upper direction but also the lower direction with respect to one component.

図１は本発明の第１実施例に係る熱電モジュールの側面図であり、図２は本発明の第１実施例に係る熱電モジュールの斜視図であり、図３は本発明の第１実施例に係る熱電モジュールの分解斜視図であり、図４は本発明の第１実施例に係る熱電モジュールが冷却部に設置される状態を図示した側面図である。 FIG. 1 is a side view of the thermoelectric module according to the first embodiment of the present invention, FIG. 2 is a perspective view of the thermoelectric module according to the first embodiment of the present invention, and FIG. 3 is a perspective view of the thermoelectric module according to the first embodiment of the present invention. FIG. 4 is an exploded perspective view of the thermoelectric module according to the present invention, and FIG. 4 is a side view illustrating a state in which the thermoelectric module according to the first embodiment of the present invention is installed in a cooling unit.

図１〜図４を参照すると、熱電モジュールは一つの第１金属基板１１０、第１樹脂層１２０、複数の第１電極１３０、複数のＰ型熱電レッグ１４０、複数のＮ型熱電レッグ１５０、複数の第２電極１６０、第２樹脂層１７０、一つの第２金属基板１８０、締結部材１９０および断熱材２００を含み、第１金属基板１１０および第２金属基板１８０は締結部材１９０を貫通させるための少なくとも一つの貫通ホールを含むことができる。 Referring to FIGS. 1 to 4, the thermoelectric module includes one first metal substrate 110, a first resin layer 120, a plurality of first electrodes 130, a plurality of P-type thermoelectric legs 140, a plurality of N-type thermoelectric legs 150, and a plurality of thermoelectric modules. The second electrode 160, the second resin layer 170, one second metal substrate 180, the fastening member 190, and the heat insulating material 200 are included, and the first metal substrate 110 and the second metal substrate 180 are for penetrating the fastening member 190. It can include at least one through hole.

本発明の他の実施例によると、一つの熱電モジュールは一つの第１金属基板１１０、複数の第２金属基板１８０および一つの第１金属基板１１０と複数の第２金属基板１８０の間に配置された第１樹脂層１２０、複数の第１電極１３０、複数のＰ型熱電レッグ１４０、複数のＮ型熱電レッグ１５０、複数の第２電極１６０、第２樹脂層１７０を含み、第１金属基板１１０および第２金属基板１８０は締結部材１９０を貫通させるための少なくとも一つの貫通ホールを含むことができる。 According to another embodiment of the present invention, one thermoelectric module is arranged between one first metal substrate 110, a plurality of second metal substrates 180, and one first metal substrate 110 and a plurality of second metal substrates 180. A first metal substrate including a first resin layer 120, a plurality of first electrodes 130, a plurality of P-type thermoelectric legs 140, a plurality of N-type thermoelectric legs 150, a plurality of second electrodes 160, and a second resin layer 170. The 110 and the second metal substrate 180 may include at least one through hole for penetrating the fastening member 190.

第１金属基板１１０は板状に形成される。また、第１金属基板１１０は冷却部Ｃまたは発熱部（図示されず）上に固定され得る。後述する本発明に係る実施例は第１金属基板１１０が冷却部Ｃに固定された例で説明される。この時、冷却部Ｃには第１金属基板１１０に形成された第１貫通ホール１１１に対応する位置にホール２０ｈが形成され、後述する締結部材１９０が第１貫通ホール１１１を通過してホール２０ｈに挿入され得る。図９〜図１１の実施例でのように、第１金属基板１１０には外郭領域すなわち、複数のＰ型熱電レッグ１４０および複数のＮ型熱電レッグ１５０が配置されていない領域にも第３貫通ホール１１３がさらに形成され得、この時、締結部材１９０は第３貫通ホール１１３および第３貫通ホール１１３と対応する位置に形成された冷却部Ｃのホール２０ｈに挿入され得る。そして、第１金属基板１１０と冷却部Ｃの間に放熱パッドＨがさらに配置されてもよい。 The first metal substrate 110 is formed in a plate shape. Further, the first metal substrate 110 may be fixed on the cooling portion C or the heat generating portion (not shown). Examples of the present invention described later will be described with an example in which the first metal substrate 110 is fixed to the cooling unit C. At this time, a hole 20h is formed in the cooling unit C at a position corresponding to the first through hole 111 formed in the first metal substrate 110, and the fastening member 190 described later passes through the first through hole 111 and the hole 20h. Can be inserted into. As in the embodiment of FIGS. 9 to 11, the first metal substrate 110 also penetrates the outer region, that is, the region where the plurality of P-type thermoelectric legs 140 and the plurality of N-type thermoelectric legs 150 are not arranged. A hole 113 may be further formed, at which time the fastening member 190 may be inserted into the third through hole 113 and the hole 20h of the cooling portion C formed at a position corresponding to the third through hole 113. Then, the heat dissipation pad H may be further arranged between the first metal substrate 110 and the cooling unit C.

第１金属基板１１０はアルミニウム、アルミニウム合金、銅および銅合金のうち少なくとも一つを含むことができる。この時、熱電モジュールに電圧を印加すると、第１金属基板１１０はペルティエ効果（Ｐｅｌｔｉｅｒ ｅｆｆｅｃｔ）により熱を吸収して低温部として作用し、第２金属基板１８０は熱を放出して高温部として作用することができる。一方、第１金属基板１１０および第２金属基板１８０に互いに異なる温度を加えると、温度差によって高温領域の電子が低温領域に移動して熱起電力が発生する。これをゼーベック効果（Ｓｅｅｂｅｃｋ ｅｆｆｅｃｔ）といい、これによる熱起電力によって熱電素子の回路内に電気が発生する。 The first metal substrate 110 can include at least one of aluminum, an aluminum alloy, copper and a copper alloy. At this time, when a voltage is applied to the thermoelectric module, the first metal substrate 110 absorbs heat by the Peltier effect and acts as a low temperature portion, and the second metal substrate 180 releases heat and acts as a high temperature portion. can do. On the other hand, when different temperatures are applied to the first metal substrate 110 and the second metal substrate 180, the electrons in the high temperature region move to the low temperature region due to the temperature difference, and thermoelectromotive force is generated. This is called the Seebeck effect, and electricity is generated in the circuit of the thermoelectric element by the thermoelectromotive force caused by the Seebeck effect.

第１金属基板１１０は少なくとも一つの第１貫通ホール１１１を含む。第１貫通ホール１１１は後述する第２金属基板１８０に形成された第２貫通ホール１８１に対応する位置に形成される。そして、第１貫通ホール１１１は第１金属基板１１０の外郭と所定間隔をおいて形成され得る。この時、第１貫通ホール１１１と第２貫通ホール１８１に締結部材１９０が通過しながら、締結部材１９０によって第１金属基板１１０と第２金属基板１８０が固定され得る。この時、複数の第１電極１３０と接する第１金属基板１１０の第１面に形成された第１貫通ホール１１１の直径および複数の第２電極１６０と接する第２金属基板１８０の第１面に形成された第２貫通ホール１８１の直径は互いに同じであり得るが、後述する絶縁挿入部材の配置形態、位置などにより複数の第１電極１３０と接する第１金属基板１１０の第１面に形成された第１貫通ホール１１１の直径および複数の第２電極１６０と接する第２金属基板１８０の第１面に形成された第２貫通ホール１８１の直径は互いに異なり得る。 The first metal substrate 110 includes at least one first through hole 111. The first through hole 111 is formed at a position corresponding to the second through hole 181 formed in the second metal substrate 180, which will be described later. Then, the first through hole 111 may be formed at a predetermined interval from the outer shell of the first metal substrate 110. At this time, the first metal substrate 110 and the second metal substrate 180 can be fixed by the fastening member 190 while the fastening member 190 passes through the first through hole 111 and the second through hole 181. At this time, on the diameter of the first through hole 111 formed on the first surface of the first metal substrate 110 in contact with the plurality of first electrodes 130 and on the first surface of the second metal substrate 180 in contact with the plurality of second electrodes 160. The diameters of the formed second through holes 181 may be the same as each other, but they are formed on the first surface of the first metal substrate 110 in contact with the plurality of first electrodes 130 depending on the arrangement form and position of the insulating insertion member described later. The diameter of the first through hole 111 and the diameter of the second through hole 181 formed on the first surface of the second metal substrate 180 in contact with the plurality of second electrodes 160 may be different from each other.

第１金属基板１１０上には第１樹脂層１２０が塗布され複数の第１電極１３０が配置される。 A first resin layer 120 is applied on the first metal substrate 110, and a plurality of first electrodes 130 are arranged.

ここで、第１金属基板１１０は第１樹脂層１２０と直接接触することができる。このために、第１金属基板１１０は両面のうち第１樹脂層１２０が配置される面、すなわち第１金属基板１１０の第１樹脂層１２０と向かい合う面の全体または部分に表面粗さが形成され得る。これによると、第１金属基板１１０と第１樹脂層１２０間の熱圧着時に第１樹脂層１２０が浮く問題を防止することができる。本明細書で、表面粗さは凹凸を意味し、表面粗度と混用されることもある。 Here, the first metal substrate 110 can come into direct contact with the first resin layer 120. For this reason, the surface roughness of the first metal substrate 110 is formed on the entire or portion of both sides of the surface on which the first resin layer 120 is arranged, that is, the surface of the first metal substrate 110 facing the first resin layer 120. obtain. According to this, it is possible to prevent the problem that the first resin layer 120 floats during thermocompression bonding between the first metal substrate 110 and the first resin layer 120. In the present specification, the surface roughness means unevenness, and may be mixed with the surface roughness.

第１樹脂層１２０および第２樹脂層１７０は樹脂および無機充填材を含む樹脂組成物からなり得、樹脂はエポキシ樹脂またはシリコーン樹脂であり得る。ここで、無機充填材は樹脂組成物の６８〜８８ｖｏｌ％で含まれ得る。無機充填材が６８ｖｏｌ％未満で含まれると、熱伝導効果が低くなり得、無機充填材が８８ｖｏｌ％を超過して含まれると樹脂層と金属基板間の接着力が低くなり得、樹脂層が容易に壊れ得る。 The first resin layer 120 and the second resin layer 170 may consist of a resin composition containing a resin and an inorganic filler, and the resin may be an epoxy resin or a silicone resin. Here, the inorganic filler can be contained in 68-88 vol% of the resin composition. If the inorganic filler is contained in an amount of less than 68 vol%, the heat conduction effect can be lowered, and if the inorganic filler is contained in an amount of more than 88 vol%, the adhesive force between the resin layer and the metal substrate can be lowered, and the resin layer becomes Can easily break.

エポキシ樹脂はエポキシ化合物および硬化剤を含むことができる。この時、エポキシ化合物１０体積比に対して硬化剤１〜１０体積比で含まれ得る。ここで、エポキシ化合物は結晶性エポキシ化合物、非結晶性エポキシ化合物およびシリコーンエポキシ化合物のうち少なくとも一つを含むことができる。結晶性エポキシ化合物はメソゲン（ｍｅｓｏｇｅｎ）構造を含むことができる。メソゲン（ｍｅｓｏｇｅｎ）は液晶（ｌｉｑｕｉｄ ｃｒｙｓｔａｌ）の基本単位であり、剛性（ｒｉｇｉｄ）構造を含む。そして、非結晶性エポキシ化合物は分子のうちエポキシ基を二つ以上有する通常の非結晶性エポキシ化合物であり得、例えばビスフェノールＡまたはビスフェノールＦから誘導されるグリシジルエーテル化物であり得る。ここで、硬化剤はアミン系硬化剤、フェノール系硬化剤、酸無水物系硬化剤、ポリメルカプタン系硬化剤、ポリアミノアミド系硬化剤、イソシアネート系硬化剤およびブロックイソシアネート系硬化剤のうち少なくとも一つを含むことができ、２種類以上の硬化剤を混合して使用してもよい。 Epoxy resins can include epoxy compounds and hardeners. At this time, the curing agent may be contained in a ratio of 1 to 10 by volume with respect to 10 by volume of the epoxy compound. Here, the epoxy compound can include at least one of a crystalline epoxy compound, a non-crystalline epoxy compound and a silicone epoxy compound. The crystalline epoxy compound can include a mesogen structure. A mesogen is a basic unit of a liquid crystal and includes a rigid structure. The non-crystalline epoxy compound can be a normal non-crystalline epoxy compound having two or more epoxy groups in the molecule, and can be, for example, a glycidyl etherified product derived from bisphenol A or bisphenol F. Here, the curing agent is at least one of an amine-based curing agent, a phenol-based curing agent, an acid anhydride-based curing agent, a polymercaptan-based curing agent, a polyaminoamide-based curing agent, an isocyanate-based curing agent, and a blocked isocyanate-based curing agent. Can be included, and two or more kinds of curing agents may be mixed and used.

無機充填材は酸化アルミニウムおよび窒化物を含むことができ、窒化物は無機充填材の５５〜９５ｗｔ％で含まれ得、より好ましくは６０〜８０ｗｔ％であり得る。窒化物がこのような数値範囲で含まれる場合、熱伝導度および接合強度を高めることができる。ここで、窒化物は、窒化ホウ素および窒化アルミニウムのうち少なくとも一つを含むことができる。ここで、窒化ホウ素は板状の窒化ホウ素が凝集された窒化ホウ素凝集体であり得る。 The inorganic filler can include aluminum oxide and nitrides, and the nitride can be contained in 55-95 wt% of the inorganic filler, more preferably 60-80 wt%. When the nitride is contained in such a numerical range, the thermal conductivity and the bonding strength can be increased. Here, the nitride can contain at least one of boron nitride and aluminum nitride. Here, the boron nitride can be a boron nitride agglomerate in which plate-shaped boron nitride is aggregated.

この時、窒化ホウ素凝集体の粒子の大きさＤ５０は２５０〜３５０μｍであり、酸化アルミニウムの粒子の大きさＤ５０は１０〜３０μｍであり得る。窒化ホウ素凝集体の粒子の大きさＤ５０と酸化アルミニウムの粒子の大きさＤ５０がこのような数値範囲を満足する場合、窒化ホウ素凝集体と酸化アルミニウムがエポキシ樹脂組成物内に均一に分散され得、これに伴い樹脂層が全体として均一な熱伝導効果および接着性能を有することができる。 At this time, the particle size D50 of the boron nitride aggregate can be 250 to 350 μm, and the particle size D50 of the aluminum oxide can be 10 to 30 μm. When the particle size D50 of the boron nitride agglomerates and the particle size D50 of the aluminum oxide satisfy such a numerical range, the boron nitride agglomerates and the aluminum oxide can be uniformly dispersed in the epoxy resin composition. Along with this, the resin layer can have a uniform heat conduction effect and adhesive performance as a whole.

本発明の実施例によると、第１金属基板１１０側および第２金属基板１８０側のうち少なくとも一つは複数の樹脂層を含んでもよい。例えば、第１樹脂層１２０および複数の第１電極１３０の間には第３樹脂層（図示されず）がさらに配置され得る。または複数の第２電極１６０と第２樹脂層１７０の間には第４樹脂層（図示されず）がさらに配置され得る。この時、第１樹脂層１２０と第３樹脂層（図示されず）の組成、ヤング率、熱膨張係数および厚さのうち少なくとも一つは互いに異なり得る。第２樹脂層１７０と第４樹脂層（図示されず）の組成、ヤング率、熱膨張係数および厚さのうち少なくとも一つは互いに異なり得る。例えば、第１樹脂層１２０および第３樹脂層（図示されず）のうち一つが樹脂組成物である場合、他の一つは組成、ヤング率、熱膨張係数および厚さのうち少なくとも一つが異なる樹脂組成物であるか、酸化アルミニウム層であるか、シリコンとアルミニウムを含む複合体（ｃｏｍｐｏｓｉｔｅ）を含むことができる。ここで、複合体はシリコンとアルミニウムを含む酸化物、炭化物および窒化物のうち少なくとも一つであり得る。例えば、複合体はＡｌ−Ｓｉ結合、Ａｌ−Ｏ−Ｓｉ結合、Ｓｉ−Ｏ結合、Ａｌ−Ｓｉ−Ｏ結合およびＡｌ−Ｏ結合のうち少なくとも一つを含むことができる。このように、Ａｌ−Ｓｉ結合、Ａｌ−Ｏ−Ｓｉ結合、Ｓｉ−Ｏ結合、Ａｌ−Ｓｉ−Ｏ結合およびＡｌ−Ｏ結合のうち少なくとも一つを含む複合体は絶縁性能が優秀であり、これに伴い高い耐電圧性能を得ることができる。または複合体はシリコンおよびアルミニウムと共にチタニウム、ジルコニウム、ホウ素、亜鉛などをさらに含む酸化物、炭化物、窒化物でもある。このために、複合体は無機バインダーおよび有無機混合バインダーのうち少なくとも一つとアルミニウムを混合した後、熱処理する過程を通じて得られ得る。無機バインダーは、例えばシリカ（ＳｉＯ２）、金属アルコキシド、酸化ホウ素（Ｂ２Ｏ３）および酸化亜鉛（ＺｎＯ２）のうち少なくとも一つを含むことができる。無機バインダーは無機粒子であるものの、水に触れるとゾルまたはゲル化されてバインディングの役割をすることができる。この時、シリカ（ＳｉＯ２）、金属アルコキシドおよび酸化ホウ素（Ｂ２Ｏ３）のうち少なくとも一つは金属との密着力を高める役割をし、酸化亜鉛（ＺｎＯ２）は樹脂層の強度を高め、熱伝導率を高める役割をすることができる。本明細書で、耐電圧性能は所定の電圧および所定の電流下で所定期間の間絶縁破壊なく維持される特性を意味し得る。例えば、ＡＣ２．５ｋＶの電圧および１ｍＡの電流下で１０秒の間絶縁破壊なく維持される場合、耐電圧は２．５ｋＶと言える。または第２樹脂層１７０および第４樹脂層（図示されず）のうち一つが樹脂組成物である場合、他の一つは組成、ヤング率、熱膨張係数および厚さのうち少なくとも一つが異なる樹脂組成物であるか、酸化アルミニウム層であるか、シリコンとアルミニウムを含む複合体（ｃｏｍｐｏｓｉｔｅ）を含むことができる。ここで各樹脂層は絶縁層と混用され得る。 According to the embodiment of the present invention, at least one of the first metal substrate 110 side and the second metal substrate 180 side may include a plurality of resin layers. For example, a third resin layer (not shown) may be further arranged between the first resin layer 120 and the plurality of first electrodes 130. Alternatively, a fourth resin layer (not shown) may be further arranged between the plurality of second electrodes 160 and the second resin layer 170. At this time, at least one of the composition, Young's modulus, coefficient of thermal expansion, and thickness of the first resin layer 120 and the third resin layer (not shown) may differ from each other. At least one of the composition, Young's modulus, coefficient of thermal expansion and thickness of the second resin layer 170 and the fourth resin layer (not shown) may differ from each other. For example, if one of the first resin layer 120 and the third resin layer (not shown) is a resin composition, the other one differs in at least one of composition, Young's modulus, coefficient of thermal expansion and thickness. It can be a resin composition, an aluminum oxide layer, or a composite containing silicon and aluminum. Here, the composite can be at least one of oxides, carbides and nitrides containing silicon and aluminum. For example, the complex can include at least one of Al—Si bond, Al—O—Si bond, Si—O bond, Al—Si—O bond and Al—O bond. As described above, the composite containing at least one of Al—Si bond, Al—O—Si bond, Si—O bond, Al—Si—O bond and Al—O bond has excellent insulation performance. As a result, high withstand voltage performance can be obtained. Alternatively, the composite is also an oxide, carbide or nitride containing titanium, zirconium, boron, zinc and the like as well as silicon and aluminum. For this purpose, the composite can be obtained through the process of mixing aluminum with at least one of an inorganic binder and a mixed binder with or without an inorganic binder and then heat-treating it. The inorganic binder can contain, for example, at least one of silica (SiO 2 ), metal alkoxide, boron oxide (B 2 O 3 ) and zinc oxide (Zn O 2 ). Although inorganic binders are inorganic particles, they can sol or gel when exposed to water and act as bindings. At this time, at least one of silica (SiO 2 ), metal alkoxide and boron oxide (B 2 O 3 ) plays a role of enhancing the adhesion with the metal, and zinc oxide (ZnO 2 ) enhances the strength of the resin layer. , Can play a role in increasing thermal conductivity. As used herein, withstand voltage performance can mean a property that is maintained under a given voltage and a given current for a given period of time without dielectric breakdown. For example, when maintained without dielectric breakdown for 10 seconds under a voltage of AC2.5 kV and a current of 1 mA, the withstand voltage can be said to be 2.5 kV. Alternatively, when one of the second resin layer 170 and the fourth resin layer (not shown) is a resin composition, the other one is a resin having at least one difference in composition, Young's modulus, coefficient of thermal expansion and thickness. It can be a composition, an aluminum oxide layer, or a composite containing silicon and aluminum. Here, each resin layer can be mixed with the insulating layer.

複数の第１電極１３０は第１樹脂層１２０上に配置される。そして第１電極１３０上には複数のＰ型熱電レッグ１４０および複数のＮ型熱電レッグ１５０が配置される。この時、第１電極１３０はＰ型熱電レッグ１４０およびＮ型熱電レッグ１５０と電気的に連結される。ここで、第１電極１３０は銅（Ｃｕ）、アルミニウム（Ａｌ）、銀（Ａｇ）およびニッケル（Ｎｉ）のうち少なくとも一つを含むことができる。 The plurality of first electrodes 130 are arranged on the first resin layer 120. A plurality of P-type thermoelectric legs 140 and a plurality of N-type thermoelectric legs 150 are arranged on the first electrode 130. At this time, the first electrode 130 is electrically connected to the P-type thermoelectric leg 140 and the N-type thermoelectric leg 150. Here, the first electrode 130 can contain at least one of copper (Cu), aluminum (Al), silver (Ag) and nickel (Ni).

複数のＰ型熱電レッグ１４０および複数のＮ型熱電レッグ１５０は第１電極１３０上に配置される。この時、Ｐ型熱電レッグ１４０およびＮ型熱電レッグ１５０は第１電極１３０とはんだ付け（Ｓｏｌｄｅｒｉｎｇ）によって接合され得る。 The plurality of P-type thermoelectric legs 140 and the plurality of N-type thermoelectric legs 150 are arranged on the first electrode 130. At this time, the P-type thermoelectric leg 140 and the N-type thermoelectric leg 150 can be joined to the first electrode 130 by soldering.

この時、Ｐ型熱電レッグ１４０およびＮ型熱電レッグ１５０はビズマス（Ｂｉ）およびテルル（Ｔｅ）を主原料で含むビスマステルライド（Ｂｉ−Ｔｅ）系熱電レッグであり得る。Ｐ型熱電レッグ１４０は全体重量１００ｗｔ％に対してアンチモン（Ｓｂ）、ニッケル（Ｎｉ）、アルミニウム（Ａｌ）、銅（Ｃｕ）、銀（Ａｇ）、鉛（Ｐｂ）、ホウ素（Ｂ）、ガリウム（Ｇａ）、テルル（Ｔｅ）、ビズマス（Ｂｉ）およびインジウム（Ｉｎ）のうち少なくとも一つを含むビスマステルライド（Ｂｉ−Ｔｅ）系主原料物質９９〜９９．９９９ｗｔ％とＢｉまたはＴｅを含む混合物０．００１〜１ｗｔ％を含む熱電レッグであり得る。例えば、主原料物質がＢｉ−Ｓｅ−Ｔｅであり、ＢｉまたはＴｅを全体重量の０．００１〜１ｗｔ％でさらに含むことができる。Ｎ型熱電レッグ１５０は全体重量１００ｗｔ％に対してセレニウム（Ｓｅ）、ニッケル（Ｎｉ）、アルミニウム（Ａｌ）、銅（Ｃｕ）、銀（Ａｇ）、鉛（Ｐｂ）、ホウ素（Ｂ）、ガリウム（Ｇａ）、テルル（Ｔｅ）、ビズマス（Ｂｉ）およびインジウム（Ｉｎ）のうち少なくとも一つを含むビスマステルライド（Ｂｉ−Ｔｅ）系主原料物質９９〜９９．９９９ｗｔ％とＢｉまたはＴｅを含む混合物０．００１〜１ｗｔ％を含む熱電レッグであり得る。例えば、主原料物質がＢｉ−Ｓｂ−Ｔｅであり、ＢｉまたはＴｅを全体重量の０．００１〜１ｗｔ％でさらに含むことができる。 At this time, the P-type thermoelectric leg 140 and the N-type thermoelectric leg 150 may be bismuth telluride (Bi-Te) -based thermoelectric legs containing bismuth (Bi) and tellurium (Te) as main raw materials. The P-type thermoelectric leg 140 has antimony (Sb), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium ( Ga), tellurium (Te), bismuth (Bi) and indium (In) containing at least one of bismuth telluride (Bi-Te) -based main raw material 99 to 99.999 wt% and a mixture containing Bi or Te 0. It can be a thermoelectric leg containing 001 to 1 wt%. For example, the main raw material is Bi-Se-Te, and Bi or Te can be further contained in an amount of 0.001 to 1 wt% of the total weight. The N-type thermoelectric leg 150 has selenium (Se), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), and gallium (Se), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), and gallium ( Ga), tellurium (Te), bismuth (Bi) and indium (In) containing at least one of bismuth telluride (Bi-Te) -based main raw material 99 to 99.999 wt% and a mixture containing Bi or Te 0. It can be a thermoelectric leg containing 001 to 1 wt%. For example, the main raw material is Bi-Sb-Te, and Bi or Te can be further contained in an amount of 0.001 to 1 wt% of the total weight.

Ｐ型熱電レッグ１４０およびＮ型熱電レッグ１５０はバルク型または積層型で形成され得る。一般的にバルク型Ｐ型熱電レッグ１４０またはバルク型Ｎ型熱電レッグ１５０は熱電素材を熱処理してインゴット（ｉｎｇｏｔ）を製造し、インゴットを粉砕し篩い分けして熱電レッグ用粉末を取得した後、これを焼結し、焼結体をカッティングする過程を通じて得られ得る。積層型Ｐ型熱電レッグ１４０または積層型Ｎ型熱電レッグ１５０はシート状の基材上に熱電素材を含むペーストを塗布して単位部材を形成した後、単位部材を積層しカッティングする過程を通じて得られ得る。 The P-type thermoelectric leg 140 and the N-type thermoelectric leg 150 can be formed in a bulk type or a laminated type. Generally, in the bulk type P-type thermoelectric leg 140 or the bulk type N-type thermoelectric leg 150, the thermoelectric material is heat-treated to produce an ingot, and the ingot is crushed and sieved to obtain a powder for the thermoelectric leg. This can be obtained through the process of sintering and cutting the sintered body. The laminated P-type thermoelectric leg 140 or the laminated N-type thermoelectric leg 150 is obtained through a process of laminating and cutting a unit member after applying a paste containing a thermoelectric material on a sheet-shaped base material to form a unit member. obtain.

この時、一対のＰ型熱電レッグ１４０およびＮ型熱電レッグ１５０は同じ形状および体積を有するか、互いに異なる形状および体積を有し得る。例えば、Ｐ型熱電レッグ１４０とＮ型熱電レッグ１５０の電気伝導特性が異なるため、Ｎ型熱電レッグ１５０の高さまたは断面積をＰ型熱電レッグ１４０の高さまたは断面積と異なるように形成してもよい。 At this time, the pair of P-type thermoelectric legs 140 and N-type thermoelectric legs 150 may have the same shape and volume, or may have different shapes and volumes from each other. For example, since the electrical conduction characteristics of the P-type thermoelectric leg 140 and the N-type thermoelectric leg 150 are different, the height or cross-sectional area of the N-type thermoelectric leg 150 is formed to be different from the height or cross-sectional area of the P-type thermoelectric leg 140. You may.

本発明の一実施例に係る熱電素子の性能は熱電性能指数で示すことができる。熱電性能指数（ＺＴ）は数１のように示すことができる。 The performance of the thermoelectric element according to the embodiment of the present invention can be indicated by the thermoelectric figure of merit. The thermoelectric figure of merit (ZT) can be expressed as Equation 1.

Figure 2020155770
Figure 2020155770

ここで、αはゼーベック係数［Ｖ／Ｋ］であり、σは電気伝導度［Ｓ／ｍ］であり、α２σはパワー因子（Ｐｏｗｅｒ Ｆａｃｔｏｒ、［Ｗ／ｍＫ２］）である。そして、Ｔは温度であり、ｋは熱伝導度［Ｗ／ｍＫ］である。ｋはａ・ｃｐ・ρで示すことができ、ａは熱拡散度［ｃｍ２／Ｓ］であり、ｃｐは比熱［Ｊ／ｇＫ］であり、ρは密度［ｇ／ｃｍ３］である。 Here, α is a Seebeck coefficient [V / K], σ is an electric conductivity [S / m], and α 2 σ is a power factor (Power Factor, [W / mK 2 ]). Then, T is the temperature and k is the thermal conductivity [W / mK]. k can be represented by a · cp · ρ, where a is the thermal diffusivity [cm 2 / S], cp is the specific heat [J / gK], and ρ is the density [g / cm 3 ].

熱電素子の熱電性能指数を得るために、Ｚメーターを利用してＺ値（Ｖ／Ｋ）を測定し、測定したＺ値を利用してゼーベック指数（ＺＴ）を計算することができる。 In order to obtain the thermoelectric figure of merit of the thermoelectric element, the Z value (V / K) can be measured using a Z meter, and the Seebeck index (ZT) can be calculated using the measured Z value.

Ｐ型熱電レッグ１４０またはＮ型熱電レッグ１５０は円筒状、多角柱状、楕円形柱状などを有することができる。またはＰ型熱電レッグ１４０またはＮ型熱電レッグ１５０は積層型構造を有してもよい。例えば、Ｐ型熱電レッグまたはＮ型熱電レッグはシート状の基材に半導体物質が塗布された複数の構造物を積層した後、これを切断する方法で形成され得る。これに伴い、材料の損失を防止し電気伝導特性を向上させることができる。 The P-type thermoelectric leg 140 or the N-type thermoelectric leg 150 can have a cylindrical shape, a polygonal columnar shape, an elliptical columnar shape, or the like. Alternatively, the P-type thermoelectric leg 140 or the N-type thermoelectric leg 150 may have a laminated structure. For example, a P-type thermoelectric leg or an N-type thermoelectric leg can be formed by laminating a plurality of structures coated with a semiconductor substance on a sheet-like base material and then cutting the structures. Along with this, it is possible to prevent material loss and improve electrical conduction characteristics.

複数の第２電極１６０は複数のＰ型熱電レッグ１４０および複数のＮ型熱電レッグ１５０の上に配置される。この時、Ｐ型熱電レッグ１４０およびＮ型熱電レッグ１５０は第２電極１６０にソルダリングによって接合され得る。ここで、第２電極１６０は銅（Ｃｕ）、アルミニウム（Ａｌ）、銀（Ａｇ）およびニッケル（Ｎｉ）のうち少なくとも一つを含むことができる。 The plurality of second electrodes 160 are arranged on the plurality of P-type thermoelectric legs 140 and the plurality of N-type thermoelectric legs 150. At this time, the P-type thermoelectric leg 140 and the N-type thermoelectric leg 150 can be joined to the second electrode 160 by soldering. Here, the second electrode 160 can contain at least one of copper (Cu), aluminum (Al), silver (Ag) and nickel (Ni).

第２樹脂層１７０は複数の第２電極１６０上に配置される。そして、第２樹脂層１７０上には複数の第２金属基板１８０が配置される。 The second resin layer 170 is arranged on the plurality of second electrodes 160. Then, a plurality of second metal substrates 180 are arranged on the second resin layer 170.

第２金属基板１８０は一つの第１金属基板１１０に向き合って第２樹脂層１７０上に配置される。第２金属基板１８０はアルミニウム、アルミニウム合金、銅、または銅合金からなり得る。 The second metal substrate 180 is arranged on the second resin layer 170 so as to face one first metal substrate 110. The second metal substrate 180 may be made of aluminum, an aluminum alloy, copper, or a copper alloy.

第１金属基板１１０の面積と第２金属基板１８０の面積は同じであり得、前述した通り、第１金属基板１１０に第３貫通ホール１１３が形成された場合、第１金属基板１１０の面積は第２金属基板１８０の面積よりも大きくてもよい。この時、第１金属基板１１０の面積に対する第２金属基板１８０の面積比は０．５０〜０．９５、好ましくは０．６０〜０．９０、さらに好ましくは０．７０〜０．８５であり得る。 The area of the first metal substrate 110 and the area of the second metal substrate 180 can be the same, and as described above, when the third through hole 113 is formed in the first metal substrate 110, the area of the first metal substrate 110 is It may be larger than the area of the second metal substrate 180. At this time, the area ratio of the second metal substrate 180 to the area of the first metal substrate 110 is 0.50 to 0.95, preferably 0.60 to 0.90, and more preferably 0.70 to 0.85. obtain.

他の実施例として、相対的により大きい面積が必要な応用分野または熱変形による影響をさらに最小化しなければならない場合、第２金属基板１８０は一つの第１金属基板１１０に対して複数に分割して備えられ得る。この時、第１金属基板１１０の面積に対する各第２金属基板１８０の面積比は０．１０〜０．５０、好ましくは０．１５〜０．４５、さらに好ましくは０．２〜０．４０であり得る。例えば、一つの第１金属基板１１０上には二つの第２金属基板１８０が配置され得る。この時、第２金属基板１８０は互いに離隔するように配置され得る。例えば、第１金属基板１１０は面積１００ｍｍ×１００ｍｍであり、第２金属基板１８０はそれぞれ面積が４５ｍｍ×１００ｍｍであり、互いに離隔した第２金属基板１８０の間の間隔は約１０ｍｍであり得る。 As another embodiment, the second metal substrate 180 is divided into a plurality of parts for one first metal substrate 110 when a relatively large area is required in an application field or when the influence of thermal deformation must be further minimized. Can be prepared. At this time, the area ratio of each second metal substrate 180 to the area of the first metal substrate 110 is 0.10 to 0.50, preferably 0.15 to 0.45, and more preferably 0.2 to 0.40. possible. For example, two second metal substrates 180 may be arranged on one first metal substrate 110. At this time, the second metal substrate 180 may be arranged so as to be separated from each other. For example, the first metal substrate 110 has an area of 100 mm × 100 mm, the second metal substrate 180 has an area of 45 mm × 100 mm, respectively, and the distance between the second metal substrates 180 separated from each other can be about 10 mm.

他の例として、一つの第１金属基板１１０上には４個の第２金属基板１８０が配置されてもよい。この時、第２金属基板１８０は互いに離隔するように配置され得る。例えば、第１金属基板１１０は面積１００ｍｍ×１００ｍｍであり、第２金属基板１８０はそれぞれ面積が４５ｍｍ×４５ｍｍであり、互いに離隔した第２金属基板１８０の間の間隔は約１０ｍｍであり得る。 As another example, four second metal substrates 180 may be arranged on one first metal substrate 110. At this time, the second metal substrate 180 may be arranged so as to be separated from each other. For example, the first metal substrate 110 has an area of 100 mm × 100 mm, the second metal substrate 180 has an area of 45 mm × 45 mm, respectively, and the distance between the second metal substrates 180 separated from each other can be about 10 mm.

他の例として、複数の第２金属基板１８０の間の間隔は５ｍｍ未満であり得る。例えば、第１金属基板１１０は面積１００ｍｍ×１００ｍｍであり、第２金属基板１８０は面積が４９．５ｍｍ×４９．５ｍｍであり、複数の第２金属基板１８０の間の間隔は２ｍｍであり、複数の第２金属基板１８０の間を連結する連結部材２３０は幅が２ｍｍに形成され得る。 As another example, the spacing between the plurality of second metal substrates 180 can be less than 5 mm. For example, the first metal substrate 110 has an area of 100 mm × 100 mm, the second metal substrate 180 has an area of 49.5 mm × 49.5 mm, and the distance between the plurality of second metal substrates 180 is 2 mm. The connecting member 230 connecting between the second metal substrates 180 may be formed to have a width of 2 mm.

この時、第１金属基板１１０の厚さは０．１ｍｍ〜２ｍｍであり得る。また、第２金属基板１８０の厚さは第１金属基板１１０の厚さと同じであるかより大きくてもよい。第２金属基板１８０の厚さが第１金属基板１１０厚さよりも大きい場合、第２金属基板１８０の厚さは第１金属基板１１０の厚さの１．１〜２．０倍であり得る。ここで、第２金属基板１８０は締結部材１９０によって曲げ可能性があるので、第１金属基板１１０より厚さが大きく形成され得る。 At this time, the thickness of the first metal substrate 110 can be 0.1 mm to 2 mm. Further, the thickness of the second metal substrate 180 may be the same as or larger than the thickness of the first metal substrate 110. When the thickness of the second metal substrate 180 is larger than the thickness of the first metal substrate 110, the thickness of the second metal substrate 180 can be 1.1 to 2.0 times the thickness of the first metal substrate 110. Here, since the second metal substrate 180 can be bent by the fastening member 190, the thickness of the second metal substrate 180 can be formed to be larger than that of the first metal substrate 110.

第２金属基板１８０には少なくとも一つの第２貫通ホール１８１が形成される。この時、第２貫通ホール１８１は各第２金属基板１８０の外郭領域Ｂ２の内側の領域である有効領域Ｂ１の一部を占有するように形成され得る。ここで、有効領域はペルティエ効果またはゼーベック効果を実質的に具現できる複数のＰ型熱電レッグ１４０およびＮ型熱電レッグ１５０が配置された領域と定義され得、本有効領域内にターミナル電極が配置され得る。ターミナル電極は外部の端子または電線と連結されるように有効領域から延長され得、複数のＰ型熱電レッグ１４０およびＮ型熱電レッグ１５０のうち少なくとも一つまたは複数の第１電極１３０と複数の第２電極１６０のうち少なくとも一つと電気的に連結され得る。本領域で複数の第１電極１３０と複数の第２電極１６０のそれぞれは互いに垂直に重なり得る。第２金属基板１８０に形成された第２貫通ホール１８１は第２金属基板１８０の外郭から所定間隔をおいて形成され得、第２貫通ホール１８１が複数の場合、第２金属基板１８０の外郭から等間隔でそれぞれ離隔配置され得る。第２貫通ホール１８１は第１貫通ホール１１１と重なるように配置され、締結部材１９０は互いに対応する第１貫通ホール１１１と第２貫通ホール１８１を通過することができる。このように締結部材１９０は第１金属基板１１０と第２金属基板１８０の有効領域Ａ１、Ｂ１内の一部を占有するように、第１金属基板１１０と第２金属基板１８０を互いに固定させることによって、熱変形を減らし接合部位に応力が集中することを防止することができる。 At least one second through hole 181 is formed in the second metal substrate 180. At this time, the second through hole 181 may be formed so as to occupy a part of the effective region B1 which is an inner region of the outer region B2 of each second metal substrate 180. Here, the effective region can be defined as a region in which a plurality of P-type thermoelectric legs 140 and N-type thermoelectric legs 150 capable of substantially embodying the Peltier effect or the Seebeck effect are arranged, and the terminal electrode is arranged in this effective region. obtain. The terminal electrode can be extended from the effective region so as to be connected to an external terminal or wire, and at least one or more of the first or more first electrodes 130 and a plurality of first electrodes 130 of the plurality of P-type thermoelectric legs 140 and N-type thermoelectric legs 150. It can be electrically connected to at least one of the two electrodes 160. In this region, each of the plurality of first electrodes 130 and the plurality of second electrodes 160 may overlap vertically with each other. The second through hole 181 formed in the second metal substrate 180 can be formed at a predetermined interval from the outer shell of the second metal substrate 180, and when there are a plurality of second through holes 181, the second through hole 181 can be formed from the outer shell of the second metal substrate 180. They can be spaced apart at equal intervals. The second through hole 181 is arranged so as to overlap the first through hole 111, and the fastening member 190 can pass through the first through hole 111 and the second through hole 181 corresponding to each other. In this way, the fastening member 190 fixes the first metal substrate 110 and the second metal substrate 180 to each other so as to occupy a part of the effective regions A1 and B1 of the first metal substrate 110 and the second metal substrate 180. As a result, thermal deformation can be reduced and stress can be prevented from concentrating on the joint portion.

図示してはいないが、第１金属基板１１０と第２金属基板１８０の有効領域Ａ１、Ｂ１に影響を与えないように、各基板の外郭領域のＡ２、Ｂ２一部すなわち、基板の縁領域を締結する場合、各基板間の固定力は相対的に高くなり得るが、熱電モジュールを１００℃以上の高温環境に露出させてゼーベック効果を利用したり、１００℃以上の熱を発生させるペルティエ効果を利用する応用分野では、かえって低温部領域と高温部領域が受ける相対的な熱量の差によって熱電モジュールの損傷が引き起こされ得る。例えば、ゼーベック効果を利用する熱電モジュールの場合、高温部金属基板は熱によって膨張し、低温部金属基板は別途の冷却部材によって収縮して、前記基板の縁領域には熱応力が集中する。この時に発生した熱応力は、各基板の間に配置された電極、熱電レッグ、樹脂層にも伝達されて脆弱な界面から剥離およびクラックなどが発生され得、その結果、熱電モジュールの損傷によって熱電効率は急減し得る。図示してはいないが、第１金属基板１１０と第２金属基板１８０の間にはシーリング部材がさらに配置されてもよい。シーリング部材は第１金属基板１１０と複数の第２金属基板１８０の間で、第１電極１３０、Ｐ型熱電レッグ１４０、Ｎ型熱電レッグ１５０および第２電極１６０の側面に配置され得る。これに伴い、第１電極１３０、Ｐ型熱電レッグ１４０、Ｎ型熱電レッグ１５０および第２電極１６０は外部の湿気、熱、汚染などからシーリングされ得る。ここで、シーリング部材は、複数の第１電極１３０の最外郭、複数のＰ型熱電レッグ１４０および複数のＮ型熱電レッグ１５０の最外郭および複数の上部電極１６０の最外郭の側面から所定距離離隔して配置されるシーリングケース、シーリングケースと第１金属基板１１０の間に配置されるシーリング材およびシーリングケースと第２金属基板１８０の間に配置されるシーリング材を含むことができる。このように、シーリングケースはシーリング材を媒介として第１金属基板１１０および第２金属基板１８０と接触することができる。これに伴い、シーリングケースが第１金属基板１１０と第２金属基板１８０と直接接触する場合、シーリングケースを通じて熱伝導が起こるようになり、その結果、第１金属基板１１０と第２金属基板１８０間の温度差が低くなる問題を防止することができる。ここで、シーリング材はエポキシ樹脂およびシリコーン樹脂のうち少なくとも一つを含むか、エポキシ樹脂およびシリコーン樹脂のうち少なくとも一つが両面に塗布されたテープを含むことができる。シーリング材はシーリングケースと第１金属基板１１０の間およびシーリングケースと第２金属基板１８０の間を気密とさせる役割をし、第１電極１３０、Ｐ型熱電レッグ１４０、Ｎ型熱電レッグ１５０および第２電極１６０のシーリング効果を高めることができ、仕上げ材、仕上げ層、防水材、防水層などと混用され得る。ここで、シーリングケースと第１金属基板１１０の間をシーリングするシーリング材は第１金属基板１１０の上面に配置され、シーリングケースと第２金属基板１８０の間をシーリングするシーリング材は第２金属基板１８０の側面に配置され得る。このために、第１金属基板１１０の面積は第２金属基板１８０の全体面積より大きくてもよい。一方、シーリングケースには電極に連結されたリード線を引き出すためのガイド溝が形成され得る。このために、シーリングケースはプラスチックなどからなる射出成形物であり得、シーリングカバーと混用され得る。ただし、シーリング部材に関する以上の説明は例示に過ぎず、シーリング部材は多様な形態に変形され得る。図示してはいないが、シーリング部材を囲むように断熱材がさらに含まれてもよい。またはシーリング部材は断熱成分を含んでもよい。 Although not shown, a part of A2 and B2 of the outer region of each substrate, that is, the edge region of the substrate is provided so as not to affect the effective regions A1 and B1 of the first metal substrate 110 and the second metal substrate 180. When fastening, the fixing force between the substrates can be relatively high, but the thermoelectric module can be exposed to a high temperature environment of 100 ° C or higher to utilize the Seebeck effect, or the Peltier effect to generate heat of 100 ° C or higher can be achieved. In the field of application to be used, damage to the thermoelectric module can be caused by the relative difference in the amount of heat received between the low temperature region and the high temperature region. For example, in the case of a thermoelectric module utilizing the Seebeck effect, the high temperature metal substrate expands due to heat, the low temperature metal substrate contracts due to a separate cooling member, and thermal stress concentrates on the edge region of the substrate. The thermal stress generated at this time is also transmitted to the electrodes, thermoelectric legs, and resin layer arranged between the substrates, and peeling and cracking may occur from the fragile interface, and as a result, thermoelectricity is caused by damage to the thermoelectric module. Efficiency can drop sharply. Although not shown, a sealing member may be further arranged between the first metal substrate 110 and the second metal substrate 180. The sealing member may be arranged between the first metal substrate 110 and the plurality of second metal substrates 180 on the side surfaces of the first electrode 130, the P-type thermoelectric leg 140, the N-type thermoelectric leg 150, and the second electrode 160. Along with this, the first electrode 130, the P-type thermoelectric leg 140, the N-type thermoelectric leg 150 and the second electrode 160 can be sealed from external moisture, heat, contamination and the like. Here, the sealing member is separated from the outermost outer shells of the plurality of first electrodes 130, the outermost outer shells of the plurality of P-type thermoelectric legs 140 and the plurality of N-type thermoelectric legs 150, and the outermost outer shells of the plurality of upper electrodes 160 by a predetermined distance. The sealing material arranged between the sealing case and the first metal substrate 110 and the sealing material arranged between the sealing case and the second metal substrate 180 can be included. In this way, the sealing case can come into contact with the first metal substrate 110 and the second metal substrate 180 via the sealing material. Along with this, when the sealing case comes into direct contact with the first metal substrate 110 and the second metal substrate 180, heat conduction occurs through the sealing case, and as a result, between the first metal substrate 110 and the second metal substrate 180. It is possible to prevent the problem that the temperature difference between the two is low. Here, the sealing material may contain at least one of an epoxy resin and a silicone resin, or may include a tape having at least one of the epoxy resin and the silicone resin coated on both sides. The sealing material serves to make the space between the sealing case and the first metal substrate 110 and the space between the sealing case and the second metal substrate 180 airtight, and the first electrode 130, the P-type thermoelectric leg 140, the N-type thermoelectric leg 150 and the first. The sealing effect of the two electrodes 160 can be enhanced, and it can be mixed with a finishing material, a finishing layer, a waterproof material, a waterproof layer, and the like. Here, the sealing material that seals between the sealing case and the first metal substrate 110 is arranged on the upper surface of the first metal substrate 110, and the sealing material that seals between the sealing case and the second metal substrate 180 is the second metal substrate. It can be placed on the side of 180. For this reason, the area of the first metal substrate 110 may be larger than the total area of the second metal substrate 180. On the other hand, the sealing case may be formed with a guide groove for pulling out the lead wire connected to the electrode. For this reason, the sealing case can be an injection molded product made of plastic or the like, and can be mixed with the sealing cover. However, the above description of the sealing member is merely an example, and the sealing member can be deformed into various forms. Although not shown, additional insulation may be included to surround the sealing member. Alternatively, the sealing member may contain a heat insulating component.

図７を参照すると、第１金属基板１１０には第１貫通ホール１１１に隣接して第１ホール配置領域１１２が形成される。第１ホール配置領域１１２は第１貫通ホール１１１と最も隣接するものの、互いに隣り合う電極の面をつなぐ仮想の線２０１、２０２、２０３、２０４がなす空間と定義され得る。第１ホール配置領域１１２は多角形の形態で形成され得、好ましくは四角形の形態で形成され得る。この時、第１ホール配置領域１１２内には複数の第１電極１３０は配置されないこともある。また、第２金属基板１８０には第１金属基板１１０と向き合う面に第２貫通ホール１８１に隣接して第２ホール配置領域１８２が形成される。第２ホール配置領域１８２は第２貫通ホール１８１と最も隣接するものの、互いに隣り合う電極の面をつなぐ仮想の線２１１、２１２、２１３、２１４がなす空間と定義され得る。第２ホール配置領域１８２は多角形の形態で形成され得、好ましくは四角形の形態で形成され得る。この時、第２ホール配置領域１８２内には複数の第２電極１６０は配置されないこともある。 Referring to FIG. 7, a first hole arrangement region 112 is formed on the first metal substrate 110 adjacent to the first through hole 111. Although the first hole arrangement region 112 is closest to the first through hole 111, it can be defined as a space formed by virtual lines 201, 202, 203, and 204 connecting the surfaces of the electrodes adjacent to each other. The first hole arrangement region 112 may be formed in the form of a polygon, preferably in the form of a quadrangle. At this time, the plurality of first electrodes 130 may not be arranged in the first hole arrangement region 112. Further, in the second metal substrate 180, a second hole arrangement region 182 is formed adjacent to the second through hole 181 on the surface facing the first metal substrate 110. The second hole arrangement region 182 can be defined as a space formed by virtual lines 211, 212, 213, and 214 that are closest to the second through hole 181 but connect the surfaces of the electrodes adjacent to each other. The second hole arrangement region 182 can be formed in the form of a polygon, preferably in the form of a quadrangle. At this time, the plurality of second electrodes 160 may not be arranged in the second hole arrangement area 182.

締結部材１９０は第１金属基板１１０と少なくとも一つの第２金属基板１８０を固定させる。この時、締結部材１９０の一部は第２貫通ホール１８１と第１貫通ホール１１１を通過し、端部が冷却部Ｃのホール２０ｈに挿入結合される。 The fastening member 190 fixes the first metal substrate 110 and at least one second metal substrate 180. At this time, a part of the fastening member 190 passes through the second through hole 181 and the first through hole 111, and the end portion is inserted and connected to the hole 20h of the cooling portion C.

図４を参照すると、締結部材１９０は第１部材１９１と第２部材１９２を含むことができる。第１部材１９１は第２貫通ホール１８１と第１貫通ホール１１１を貫通し、一端部冷却部Ｃに埋め立てられて固定される。この時、第１部材１９１の外周にはねじ山が形成され得る。第１部材１９１の直径は第２貫通ホール１８１および第１貫通ホール１１１の直径と同じであるか第２貫通ホール１８１および第１貫通ホール１１１の直径より小さく形成され得る。 With reference to FIG. 4, the fastening member 190 can include a first member 191 and a second member 192. The first member 191 penetrates the second through hole 181 and the first through hole 111, and is embedded and fixed in the cooling portion C at one end. At this time, a thread may be formed on the outer circumference of the first member 191. The diameter of the first member 191 may be the same as the diameter of the second through hole 181 and the first through hole 111, or may be formed smaller than the diameter of the second through hole 181 and the first through hole 111.

第２部材１９２は、第１部材１９１の他の端部から延びて第２貫通ホール１８１の直径より大きい直径で形成される。第２部材１９２は第２金属基板１８０が第１金属基板１１０から広がることを防止する。 The second member 192 extends from the other end of the first member 191 and is formed with a diameter larger than the diameter of the second through hole 181. The second member 192 prevents the second metal substrate 180 from spreading from the first metal substrate 110.

第２金属基板１８０が複数の場合、断熱材２００は複数の第２金属基板１８０の間の離隔空間に配置され得る。ここで断熱材２００はエポキシ樹脂、シリコーン樹脂およびセラミックウールのうち少なくとも一つを含むことができ、断熱材２００は前述したシーリング部材および後述する連結部材２３０と混用され得る。 When there are a plurality of second metal substrates 180, the heat insulating material 200 may be arranged in a separated space between the plurality of second metal substrates 180. Here, the heat insulating material 200 can contain at least one of epoxy resin, silicone resin and ceramic wool, and the heat insulating material 200 can be mixed with the sealing member described above and the connecting member 230 described later.

ヒートシンク２２０は第２金属基板１８０上に配置され得る。例えば、ヒートシンク２２０は第２金属基板１８０の両面のうち第２樹脂層１７０が配置される面の反対面に配置され得る。この時、第２金属基板１８０とヒートシンク２２０は一体に形成されてもよい。図示してはいないが、第１金属基板１１０にもヒートシンクが形成され得る。ヒートシンク２２０はそれぞれ平板状の複数の平面基材２２１が平行に配置され、平面基材２２１の間の空間が空気の流路を形成する構造を有することができる。この時、平面基材２２１の間の間隔は１０ｍｍ未満であり得る。 The heat sink 220 may be placed on the second metal substrate 180. For example, the heat sink 220 may be arranged on both sides of the second metal substrate 180, opposite to the surface on which the second resin layer 170 is arranged. At this time, the second metal substrate 180 and the heat sink 220 may be integrally formed. Although not shown, a heat sink may also be formed on the first metal substrate 110. The heat sink 220 can have a structure in which a plurality of flat plate-shaped base materials 221 are arranged in parallel, and the space between the flat base materials 221 forms an air flow path. At this time, the distance between the flat base materials 221 can be less than 10 mm.

以下では、熱電モジュールの他の実施例に係る熱電モジュール２０について図５および図６を参照して説明する。 In the following, the thermoelectric module 20 according to another embodiment of the thermoelectric module will be described with reference to FIGS. 5 and 6.

図５は本発明の第２実施例に係る熱電モジュールの斜視図であり、図６は本発明の第２実施例に係る熱電モジュールが冷却部に設置される状態を図示した側面図である。 FIG. 5 is a perspective view of the thermoelectric module according to the second embodiment of the present invention, and FIG. 6 is a side view illustrating a state in which the thermoelectric module according to the second embodiment of the present invention is installed in the cooling unit.

図５および図６を参照すると、熱電モジュール２０は複数の第２金属基板１８０の間を連結させる連結部材２３０をさらに含むことができる。 With reference to FIGS. 5 and 6, the thermoelectric module 20 may further include a connecting member 230 that connects between the plurality of second metal substrates 180.

連結部材２３０は複数の第２金属基板１８０の間を接合するグルー（Ｇｌｕｅ）であり得る。この時、熱電モジュール２０は複数の第２金属基板１８０の離隔空間に断熱処理を省略できるが、前述したように、第１金属基板１１０と第２金属基板１８０の間には断熱材２００が配置され得る。 The connecting member 230 can be a glue that joins between the plurality of second metal substrates 180. At this time, the thermoelectric module 20 can omit the heat insulating treatment in the separated space of the plurality of second metal substrates 180, but as described above, the heat insulating material 200 is arranged between the first metal substrate 110 and the second metal substrate 180. Can be done.

図示してはいないが、熱電モジュールは連結部材２３０を省略し、複数の第２金属基板１８０の一部からそれぞれ延びた延長部材によって互いに連結形成され得る。 Although not shown, the thermoelectric modules may omit the connecting member 230 and may be connected to each other by extension members extending from a part of the plurality of second metal substrates 180.

この時、延長部材は第２金属基板１８０の厚さより小さく形成され得る。例えば、第２金属基板１８０の厚さは０．２ｍｍ〜４ｍｍであり得、延長部材の厚さは０．１ｍｍ〜２ｍｍであり得る。ここで、延長部材の厚さに対する前記複数の第２金属基板の厚さ比は１〜２以下であり得る。 At this time, the extension member may be formed smaller than the thickness of the second metal substrate 180. For example, the thickness of the second metal substrate 180 can be 0.2 mm to 4 mm, and the thickness of the extension member can be 0.1 mm to 2 mm. Here, the thickness ratio of the plurality of second metal substrates to the thickness of the extension member can be 1 to 2 or less.

連結部材２３０の一面は第２金属基板１８０の一面に比べ、陥没しながら溝２４１が形成され得る。この時、連結部材２３０は十字状に形成され得る。例えば、第１金属基板１１０の面積が１００ｍｍ×１００ｍｍであり、第２金属基板１８０の面積が４５ｍｍ×４５ｍｍであり、厚さが０．２ｍｍ〜４ｍｍであるとき、連結部材２３０は幅が１０ｍｍであり、厚さが０．１ｍｍ〜２ｍｍであり、連結部材２３０によって形成された溝は深さが０．１ｍｍ〜２ｍｍ以下であり得る。このように連結部材２３０と第２金属基板１８０の厚さの差によって溝が形成され、第２金属基板１８０の中央部の厚さが薄くなり、第２金属基板１８０の熱変形が緩和される効果を有することができる。 A groove 241 can be formed on one surface of the connecting member 230 while being depressed as compared with one surface of the second metal substrate 180. At this time, the connecting member 230 may be formed in a cross shape. For example, when the area of the first metal substrate 110 is 100 mm × 100 mm, the area of the second metal substrate 180 is 45 mm × 45 mm, and the thickness is 0.2 mm to 4 mm, the width of the connecting member 230 is 10 mm. Yes, the thickness is 0.1 mm to 2 mm, and the groove formed by the connecting member 230 can be 0.1 mm to 2 mm or less in depth. In this way, the groove is formed by the difference in thickness between the connecting member 230 and the second metal substrate 180, the thickness of the central portion of the second metal substrate 180 is reduced, and the thermal deformation of the second metal substrate 180 is alleviated. Can have an effect.

本明細書で、互いに離隔した複数の第２金属基板１８０の間に配置され、複数の第２金属基板１８０を連結する断熱材２００、連結部材２３０および延長部材を通称して連結部材と言え、連結部材は絶縁物質を含む絶縁部材であり得る。 In the present specification, the heat insulating material 200, the connecting member 230, and the extension member, which are arranged between the plurality of second metal substrates 180 separated from each other and connect the plurality of second metal substrates 180, can be referred to as a connecting member. The connecting member can be an insulating member containing an insulating material.

以下では、複数の第１電極１３０と複数の第２電極１６０の配置方法に対する多様な実施例に関して、図７〜図１１を参照して説明する。 In the following, various examples for the arrangement method of the plurality of first electrodes 130 and the plurality of second electrodes 160 will be described with reference to FIGS. 7 to 11.

図７は第１金属基板１１０と第２金属基板１８０上に第１電極と第２電極を配置する方法に対する第１実施例を図示した図面であり、図８は図７で示した複数の第１電極と複数の第２電極を重ねた状態を図示した図面であり、図９〜図１１は第１金属基板１１０と第２金属基板１８０上に第１電極と第２電極を配置する方法に対する多様な実施例を図示した図面である。 FIG. 7 is a drawing illustrating a first embodiment for a method of arranging the first electrode and the second electrode on the first metal substrate 110 and the second metal substrate 180, and FIG. 8 is a drawing showing a plurality of second electrodes shown in FIG. It is a drawing which illustrated the state in which one electrode and a plurality of 2nd electrodes were overlapped | FIG. It is a drawing which illustrated various examples.

図７〜図１１を参照すると、複数の第１電極１３０は第１金属基板１１０が第２金属基板１８０と向き合う一面に配置され、複数の第２電極１６０は第２金属基板１８０が第１金属基板１１０と向き合う一面に配置される。この時、複数の第１電極１３０は第１ホール配置領域１１２を空けて配置され、複数の第２電極は第２ホール配置領域１８２を空けて配置され得、第１ホール配置領域１１２の位置と第２ホール配置領域１８２の位置は互いに対応する。 Referring to FIGS. 7 to 11, the plurality of first electrodes 130 are arranged on one surface where the first metal substrate 110 faces the second metal substrate 180, and the plurality of second electrodes 160 have the second metal substrate 180 as the first metal. It is arranged on one side facing the substrate 110. At this time, the plurality of first electrodes 130 may be arranged with the first hole arrangement area 112 open, and the plurality of second electrodes may be arranged with the second hole arrangement area 182 open, and the position of the first hole arrangement area 112 The positions of the second hole arrangement area 182 correspond to each other.

ここで、複数の第１電極１３０と複数の第２電極１６０のそれぞれは長方形の形状に形成され、長幅Ｗ１と短幅Ｗ２が区分される。この時、配置されるレッグの形状により第１電極１３０と第２電極１６０の短幅Ｗ２に対する長幅Ｗ１の比は可変的であり得、好ましくは第１電極１３０と第２電極１６０の短幅Ｗ２に対する長幅Ｗ１の比は２．０５〜４．５０であり得る。本明細書で、長幅の方向を長さ方向と指しし得る。 Here, each of the plurality of first electrodes 130 and the plurality of second electrodes 160 is formed in a rectangular shape, and the long width W1 and the short width W2 are classified. At this time, the ratio of the long width W1 to the short width W2 of the first electrode 130 and the second electrode 160 can be variable depending on the shape of the arranged leg, and preferably the short width of the first electrode 130 and the second electrode 160. The ratio of the long width W1 to W2 can be 2.05 to 4.50. As used herein, the direction of length can be referred to as the direction of length.

図示してはいないが、第１金属基板１１０および第２金属基板１８０の有効領域に貫通ホール１１１、１８１が形成されていない場合、複数の第１電極１３０の長さ方向はすべて第１方向Ｙに配置され得る。この時、複数の第２電極１６０のうち有効領域の縁領域で互いに対向する二つの列または二つの行に配置された電極の少なくとも一部は第１方向Ｙと垂直な第２方向Ｘに配置され、残りの電極は電極の短幅Ｗ２だけ複数の第１電極１３０から移動して少なくとも一部が重なり得る。これを通じて第１金属基板１１０および第２金属基板１８０の間の複数のＰ型およびＮ型熱電レッグをすべて直列に連結することができる。 Although not shown, when the through holes 111 and 181 are not formed in the effective regions of the first metal substrate 110 and the second metal substrate 180, the length directions of the plurality of first electrodes 130 are all in the first direction Y. Can be placed in. At this time, of the plurality of second electrodes 160, at least a part of the electrodes arranged in two columns or two rows facing each other in the edge region of the effective region is arranged in the second direction X perpendicular to the first direction Y. The remaining electrodes may move from the plurality of first electrodes 130 by the short width W2 of the electrodes and at least partially overlap. Through this, a plurality of P-type and N-type thermoelectric legs between the first metal substrate 110 and the second metal substrate 180 can all be connected in series.

本発明の実施例に係る第１金属基板１１０および第２金属基板１８０の有効領域に少なくとも一つの貫通ホール１１１、１８１が形成された場合、第１電極１３０と複数の第２電極１６０のうち縁領域の電極を除いた電極の長さ方向は、第１方向Ｙおよび第１方向Ｙと垂直な第２方向Ｘを混在させて配置することができる。 When at least one through hole 111, 181 is formed in the effective region of the first metal substrate 110 and the second metal substrate 180 according to the embodiment of the present invention, the edge of the first electrode 130 and the plurality of second electrodes 160 In the length direction of the electrodes excluding the electrodes in the region, the first direction Y and the second direction X perpendicular to the first direction Y can be arranged in a mixed manner.

この時、複数の第１電極１３０または複数の第２電極１６０のうち、縁領域を除いた少なくとも二つの電極は第１方向Ｙと垂直な第２方向Ｘに配置され、残りの電極は第２方向Ｘと垂直な第１方向Ｙに配置され得る。 At this time, of the plurality of first electrodes 130 or the plurality of second electrodes 160, at least two electrodes excluding the edge region are arranged in the second direction X perpendicular to the first direction Y, and the remaining electrodes are second. It may be arranged in the first direction Y perpendicular to the direction X.

前記第１ホール配置領域１１２または第２ホール配置領域１８２と隣接した少なくとも一つの電極は長さ方向が第２方向Ｘに向かうように配置され、前記少なくとも一つと隣接した他の一つも長さ方向が第２方向Ｘに向かうように配置され得る。この時、前記少なくとも二つの第１電極１３０と前記少なくとも二つの第２電極１６０は互いに重ならないか、一部が重なり得る。 At least one electrode adjacent to the first hole arrangement region 112 or the second hole arrangement region 182 is arranged so that the length direction is directed to the second direction X, and the other one adjacent to the at least one is also in the length direction. Can be arranged so as to face the second direction X. At this time, the at least two first electrodes 130 and the at least two second electrodes 160 may not overlap each other or may partially overlap each other.

詳しくは、第１ホール配置領域１１２に隣接した複数の第１電極１３０のうち少なくとも二つの第１電極１３０ａ、１３０ｂは、長さ方向が第２方向Ｘに向かうように配置され得る。そして、残りの第１電極１３０は長さ方向が第１方向Ｙに向かうように配置され得る。 Specifically, at least two of the first electrodes 130 adjacent to the first hole arrangement region 112, the first electrodes 130a and 130b, may be arranged so that the length direction faces the second direction X. Then, the remaining first electrode 130 may be arranged so that the length direction is directed to the first direction Y.

この時、第２ホール配置領域１８２に隣接した複数の第２電極１６０のうち少なくとも二つの第２電極１６０ａ、１６０ｂは第２方向Ｘに配置され得る。また、有効領域の縁に配置された複数の第２電極１６０ｃのうち互いに対向する二つの行も、長さ方向が第２方向Ｘに配置され得る。そして、残りの第２電極１６０は長さ方向が第１方向Ｙに向かうように配置され得る。この時、第２方向Ｘに配置された第１電極１３０ａ、１３０ｂと、第２方向に配置された第２電極１６０ａ、１６０ｂは互いに重ならないか、一部が重なるように配置され得る。ここで、複数の第１電極１３０と複数の第２電極１６０の配置形態は互いに変えて適用可能である。 At this time, at least two second electrodes 160a and 160b of the plurality of second electrodes 160 adjacent to the second hole arrangement region 182 can be arranged in the second direction X. Further, two rows of the plurality of second electrodes 160c arranged on the edge of the effective region facing each other may also be arranged in the second direction X in the length direction. Then, the remaining second electrode 160 may be arranged so that the length direction is directed to the first direction Y. At this time, the first electrodes 130a and 130b arranged in the second direction X and the second electrodes 160a and 160b arranged in the second direction may not overlap each other or may be arranged so as to partially overlap each other. Here, the arrangement form of the plurality of first electrodes 130 and the plurality of second electrodes 160 can be applied differently from each other.

より詳細に説明すると、図８に図示された通り、複数の第１電極１３０のうち縁領域を除いた少なくとも二つは、第１ホール配置領域１１２を定義する各仮想の線２０１、２０２、２０３、２０４から延びた延長線がなす仮想の空間（Ｈ１またはＨ２）と少なくとも一部が重なって第２方向Ｘに配置され得、複数の第２電極１６０のうち縁領域を除いた少なくとも二つは、第２ホール配置領域１８２を定義する各仮想の線２１１、２１２、２１３、２１４から延びた延長線がなす仮想の空間（Ｈ３またはＨ４）と少なくとも一部が重なって第２方向Ｘに配置され得る。これを通じて、それぞれのホール配置領域が形成された制限された空間内で、複数のＰ型およびＮ型熱電レッグの最適配置が可能である。ここで、第１ホール配置領域１１２および第２ホール配置領域１８２の個数、位置および形状などにより、第２方向Ｘに配置された電極の個数は増加し得る。この時、第２方向Ｘに配置された電極の個数は２の倍数個であり得、第２方向Ｘに配置された電極のうち少なくとも二つは前記Ｈ１〜Ｈ４と少なくとも一部が重なって配置され得る。 More specifically, as shown in FIG. 8, at least two of the plurality of first electrodes 130 excluding the edge region are the virtual lines 201, 202, 203 that define the first hole arrangement region 112. , At least a part of the virtual space (H1 or H2) formed by the extension line extending from 204 may be arranged in the second direction X, and at least two of the plurality of second electrodes 160 excluding the edge region may be arranged. , At least partly overlaps with the virtual space (H3 or H4) formed by the extension lines extending from the virtual lines 211, 212, 213, and 214 that define the second hole arrangement area 182, and is arranged in the second direction X. obtain. Through this, a plurality of P-type and N-type thermoelectric legs can be optimally arranged in the limited space in which each hole arrangement area is formed. Here, the number of electrodes arranged in the second direction X can be increased depending on the number, position, shape, and the like of the first hole arrangement area 112 and the second hole arrangement area 182. At this time, the number of electrodes arranged in the second direction X can be a multiple of 2, and at least two of the electrodes arranged in the second direction X are arranged so that at least a part of them overlap with H1 to H4. Can be done.

本明細書で複数の第１電極１３０と複数の第２電極１６０のそれぞれの電極配置形態は互いに変えて適用され得、第１方向Ｙおよび第２方向Ｘはこれに限定されない。 In the present specification, the respective electrode arrangement forms of the plurality of first electrodes 130 and the plurality of second electrodes 160 may be applied differently from each other, and the first direction Y and the second direction X are not limited thereto.

図９を参照すると、複数の第１電極１３０のうち第１ホール配置領域１１２と隣接した二つの第１電極１３０ｄ、１３０ｆは長さ方向が第２方向Ｘに向かうように配置され得、前記二つの第１電極１３０ｄ、１３０ｆと隣接した二つの第１電極１３０ｃ、１３０ｅも長さ方向が同様に第２方向Ｘに配置され得る。そして、残りの第１電極１３０は長さ方向が第１方向Ｙに向かうように配置され得る。 Referring to FIG. 9, the two first electrodes 130d and 130f adjacent to the first hole arrangement region 112 among the plurality of first electrodes 130 can be arranged so that the length direction faces the second direction X. The two first electrodes 130c and 130e adjacent to the first electrodes 130d and 130f may also be arranged in the second direction X in the same length direction. Then, the remaining first electrode 130 may be arranged so that the length direction is directed to the first direction Y.

この時、複数の第２電極１６０のうち第２ホール配置領域１８２と隣接した二つの第２電極１６０ｄ、１６０ｅは長さ方向が第２方向Ｘに向かうように配置され得、第２ホール配置領域１８２と隣接した他の二つの第２電極１６０ｆ、１６０ｇも長さ方向が同様に第２方向Ｘに配置され得る。また、縁領域で互いに対向する二つの行に配置された第２電極１６０ｈも長さ方向が第２方向へ向かうように配置され得る。そして、残りの第２電極１６０は長さ方向が第１方向Ｙに向かうように配置され得る。 At this time, of the plurality of second electrodes 160, the two second electrodes 160d and 160e adjacent to the second hole arrangement region 182 can be arranged so that the length direction faces the second hole arrangement region X, and the second hole arrangement region The other two second electrodes 160f, 160g adjacent to the 182 may also be arranged in the second direction X in the same length direction. Further, the second electrodes 160h arranged in two rows facing each other in the edge region may also be arranged so that the length direction faces the second direction. Then, the remaining second electrode 160 may be arranged so that the length direction is directed to the first direction Y.

図１０を参照すると、第１金属基板１１０と第２金属基板１８０には第１貫通ホール１１１と第２貫通ホール１８１が複数個で形成され得、これに伴い、第１ホール配置領域１１２と第２ホール配置領域１８２も複数個で形成され得る。この時、複数の第１電極１３０のうち各第１ホール配置領域１１２と隣接した二つの第１電極１３０ｇ、１３０ｈは長さ方向が第２方向Ｘに向かうように配置され得、前記二つの第１電極１３０ｇ、１３０ｈと隣接した二つの第１電極１３０ｉ、１３０ｊも長さ方向が同様に第２方向Ｘに配置され得る。この時、第１ホール配置領域１１２は複数で形成され、複数の第１電極１３０のうち２の倍数個は第２方向Ｘに向かうように配置され得る。さらに詳しくは、複数の第１電極１３０のうち少なくとも８個の第１電極１３０ｇ、・・・、１３０ｎは第２方向Ｘに向かうように配置され得る。また、残りの第１電極１３０は長さ方向が第１方向Ｙに向かうように配置され得る。 Referring to FIG. 10, a plurality of first through holes 111 and second through holes 181 may be formed on the first metal substrate 110 and the second metal substrate 180, and accordingly, the first hole arrangement region 112 and the second through hole 181 may be formed. A plurality of 2-hole arrangement regions 182 may also be formed. At this time, of the plurality of first electrodes 130, the two first electrodes 130g and 130h adjacent to each first hole arrangement region 112 can be arranged so that the length direction faces the second direction X, and the two second electrodes The two first electrodes 130i and 130j adjacent to the one electrode 130g and 130h may also be arranged in the second direction X in the same length direction. At this time, a plurality of first hole arrangement regions 112 are formed, and multiples of 2 of the plurality of first electrodes 130 may be arranged so as to face the second direction X. More specifically, at least eight of the plurality of first electrodes 130, 130 g, ..., 130 n can be arranged so as to face the second direction X. Further, the remaining first electrode 130 may be arranged so that the length direction is directed to the first direction Y.

この時、第２電極１６０のうち各第２ホール配置領域１８２と第１方向Ｙに隣接した二つの第２電極１６０ｉ、１６０ｊは長さ方向が第２方向Ｘに向かうように配置され得、第２ホール配置領域１８２と隣接した他の二つの第２電極１６０ｋ、１６０ｌも長さ方向が同様に第２方向Ｘに配置され得る。 At this time, of the second electrodes 160, the two second hole arrangement regions 182 and the two second electrodes 160i and 160j adjacent to the first direction Y can be arranged so that the length direction faces the second direction X, and the second electrode 160 can be arranged. The other two second electrodes 160k and 160l adjacent to the two-hole arrangement region 182 can also be arranged in the second direction X in the same length direction.

この時、第２ホール配置領域１８２は複数で形成され、複数の第２電極１６０のうち２の倍数個は長さ方向が第２方向Ｘに向かうように配置され得る。さらに詳しくは、複数の第２電極１６０のうち少なくとも８個の第２電極１６０ｉ、・・・、１６０ｐは長さ方向が第２方向Ｘに向かうように配置され得る。また、縁領域で互いに対向する二つの行に配置された第２電極１６０ｑも長さ方向が第２方向Ｘに向かうように配置され得る。また、残りの第２電極１６０は長さ方向が第１方向Ｙに向かうように配置され得る。 At this time, a plurality of second hole arrangement regions 182 are formed, and multiples of 2 of the plurality of second electrodes 160 may be arranged so that the length direction is directed to the second direction X. More specifically, at least eight of the plurality of second electrodes 160, the second electrodes 160i, ..., 160p can be arranged so that the length direction faces the second direction X. Further, the second electrodes 160q arranged in two rows facing each other in the edge region may also be arranged so that the length direction faces the second direction X. Further, the remaining second electrode 160 may be arranged so that the length direction is directed to the first direction Y.

図１１を参照すると、第１ホール配置領域１１２は複数で形成され、複数の第１電極１３０のうち一つの第１ホール配置領域１１２と離隔した４個の第１電極１３０ｏ、・・・、１３０ｒは長さ方向が第２方向Ｘに向かうように配置され得る。ここで、第１ホール配置領域１１２と前記第１電極１３０ｏ、・・・、１３０ｒの間には複数の電極が配置され得る。ただし、前記第１電極１３０ｏ、・・・、１３０ｒは第１ホール配置領域１１２を定義する各仮想の線から延びた延長線がなす仮想の空間と少なくとも一部が重なって第２方向Ｘに配置され得る。また、複数の第１電極１３０のうち他の一つの第１ホール配置領域１１２と第１方向に隣接した４個の第１電極１３０ｓ、・・・、１３０ｖは第２方向Ｘに配置され得る。 Referring to FIG. 11, the first hole arrangement region 112 is formed by a plurality of the four first electrode 130o, ..., 130r, which are separated from the first hole arrangement region 112 of one of the plurality of first electrodes 130. Can be arranged so that the length direction is toward the second direction X. Here, a plurality of electrodes may be arranged between the first hole arrangement region 112 and the first electrodes 130o, ..., 130r. However, the first electrodes 130o, ..., 130r are arranged in the second direction X by overlapping at least a part with the virtual space formed by the extension lines extending from the virtual lines defining the first hole arrangement region 112. Can be done. Further, among the plurality of first electrodes 130, the four first electrodes 130s, ..., 130v adjacent to the other one first hole arrangement region 112 in the first direction may be arranged in the second direction X.

この時、第２電極１６０のうち各第２ホール配置領域１８２と第１方向Ｙに隣接した４個の第２電極１６０ｒ、・・・、１６０ｕと４個の第２電極１６０ｖ、・・・、１６０ｙは長さ方向が第２方向Ｘに向かうように配置され得る。 At this time, of the second electrodes 160, the four second electrodes 160r, ..., 160u and the four second electrodes 160v, ..., Which are adjacent to each second hole arrangement region 182 and the first direction Y, ... The 160y can be arranged so that the length direction is toward the second direction X.

図１２を参照すると、第１金属基板１１０と第２金属基板１８０には第１貫通ホール１１１と第２貫通ホール１８１が複数個で形成され得、これに伴い、第１ホール配置領域１１２と第２ホール配置領域１８２も複数個で形成され得る。例えば、第１金属基板１１０は４個の第１貫通ホール１１１および４個の第１ホール配置領域１１２を含むことができ、第２金属基板１８０は４個の第２貫通ホール１８１および４個の第２ホール配置領域１８２を含むことができる。 Referring to FIG. 12, a plurality of first through holes 111 and second through holes 181 may be formed on the first metal substrate 110 and the second metal substrate 180, and accordingly, the first hole arrangement region 112 and the second through hole 181 may be formed. A plurality of 2-hole arrangement regions 182 may also be formed. For example, the first metal substrate 110 can include four first through holes 111 and four first hole placement regions 112, and the second metal substrate 180 can include four second through holes 181 and four. The second hole arrangement area 182 can be included.

この時、複数の第１電極１３０のうち各第１ホール配置領域１１２と隣接した二つの第１電極１３０−１、１３０−２は長さ方向が第２方向Ｘに向かうように配置され得、各第１ホール配置領域１１２と隣接した他の二つの第１電極１３０−３、１３０−４も長さ方向が第２方向Ｘに向かうように配置され得る。これに伴い、複数の第１電極１３０のうち２の倍数個は第２方向Ｘに向かうように配置され得る。さらに詳しくは、複数の第１電極１３０のうち少なくとも１６個の第１電極１３０−１、・・・、１３０−４は第２方向Ｘに向かうように配置され得る。また、残りの第１電極１３０は長さ方向が第１方向Ｙに向かうように配置され得る。 At this time, of the plurality of first electrodes 130, the two first electrodes 130-1 and 130-2 adjacent to each first hole arrangement region 112 may be arranged so that the length direction faces the second direction X. The other two first electrodes 130-3 and 130-4 adjacent to each first hole arrangement region 112 may also be arranged so that the length direction is directed to the second direction X. Along with this, multiples of 2 of the plurality of first electrodes 130 may be arranged so as to face the second direction X. More specifically, at least 16 of the plurality of first electrodes 130, the first electrodes 130-1, ..., 130-4 may be arranged so as to face the second direction X. Further, the remaining first electrode 130 may be arranged so that the length direction is directed to the first direction Y.

また、第１ホール配置領域１１２のうちいずれか一つと隣接して第２方向Ｘに向かうように配置される４個の第１電極１３０−１、・・・、１３０−４のうち少なくとも一つに隣接した２ｎ個（ｎは１以上の整数）の第１電極１３０−２ｎも長さ方向が第２方向Ｘに向かうように配置され得る。ここで、２ｎ個の第１電極１３０−２ｎが配置される位置は複数の第２電極１８０の配置構造により多様に変形され得る。 Further, at least one of four first electrodes 130-1, ..., 130-4 arranged adjacent to any one of the first hole arrangement regions 112 so as to face the second direction X. 2n (n is an integer of 1 or more) first electrodes 130-2n adjacent to the first electrode 130-2n may also be arranged so that the length direction is directed to the second direction X. Here, the position where the 2n first electrodes 130-2n are arranged can be variously deformed by the arrangement structure of the plurality of second electrodes 180.

また、ここで、第１ホール配置領域１１２と２ｎ個の第１電極１３０−２ｎの間には複数の電極が配置され得る。ただし、２ｎ個の第１電極１３０−２ｎは第１ホール配置領域１１２を定義する各仮想の線から延びた延長線がなす仮想の空間と少なくとも一部が重なって第２方向Ｘに配置され得る。 Further, here, a plurality of electrodes may be arranged between the first hole arrangement region 112 and the 2n first electrodes 130-2n. However, the 2n first electrodes 130-2n may be arranged in the second direction X by overlapping at least a part of the virtual space formed by the extension lines extending from the virtual lines defining the first hole arrangement region 112. ..

図１２では２ｎ個の第１電極１３０−２ｎが第２方向Ｘに配置されたもので例示されているが、これに制限されず、２ｎ個の第２電極が第１方向Ｙに配置されてもよい。 In FIG. 12, 2n first electrodes 130-2n are illustrated in the second direction X, but the present invention is not limited to this, and 2n second electrodes are arranged in the first direction Y. May be good.

第１金属基板１１０と複数の第１電極１３０の間に配置された第１樹脂層１２０と第２金属基板１８０と複数の第２電極１６０の間に配置された第２樹脂層１７０が図１２にのみ図示されているがこれに制限されず、図７〜図１１の実施例では説明の便宜のために省略されており、同一または類似する構造の第１樹脂層１２０および第２樹脂層１８０が図７〜図１１の実施例においても適用され得る。 FIG. 12 shows a first resin layer 120 arranged between the first metal substrate 110 and the plurality of first electrodes 130, and a second resin layer 170 arranged between the second metal substrate 180 and the plurality of second electrodes 160. The first resin layer 120 and the second resin layer 180 having the same or similar structure are omitted for convenience of explanation in the embodiments shown in FIGS. 7 to 11, but are not limited thereto. Can also be applied in the examples of FIGS. 7-11.

これと同様に、ターミナル電極５００が図１２にのみ図示されているが、これに制限されず、同一または類似する構造のターミナル電極５００が図７〜図１１の実施例においても適用され得る。 Similarly, the terminal electrode 500 is shown only in FIG. 12, but is not limited thereto, and the terminal electrode 500 having the same or similar structure may be applied in the examples of FIGS. 7 to 11.

図７〜図１２で図示された通り、縁領域で互いに対向するように第２方向Ｘに配置された二つの行は、第１金属基板１１０に配置された第１電極１３０に含まれるか、または第２金属基板１８０に配置された第２電極１６０に含まれ得る。 As illustrated in FIGS. 7-12, the two rows arranged in the second direction X so as to face each other in the edge region are included in the first electrode 130 arranged on the first metal substrate 110. Alternatively, it may be included in the second electrode 160 arranged on the second metal substrate 180.

この時、複数の第１電極１３０と接する第１金属基板１１０の第１面に形成された第１貫通ホール１１１の直径ｄ１および複数の第２電極１６０と接する第２金属基板１８０の第１面に形成された第２貫通ホール１８１の直径ｄ２は互いに同じでもよいが、後述する絶縁挿入部材の配置形態、位置などにより複数の第１電極１３０と接する第１金属基板１１０の第１面に形成された第１貫通ホール１１１の直径ｄ１および複数の第２電極１６０と接する第２金属基板１８０の第１面に形成された第２貫通ホール１８１の直径ｄ２は互いに異なってもよい。 At this time, the diameter d1 of the first through hole 111 formed on the first surface of the first metal substrate 110 in contact with the plurality of first electrodes 130 and the first surface of the second metal substrate 180 in contact with the plurality of second electrodes 160. The diameter d2 of the second through hole 181 formed in the above may be the same as each other, but it is formed on the first surface of the first metal substrate 110 in contact with the plurality of first electrodes 130 depending on the arrangement form and position of the insulating insertion member described later. The diameter d1 of the first through hole 111 and the diameter d2 of the second through hole 181 formed on the first surface of the second metal substrate 180 in contact with the plurality of second electrodes 160 may be different from each other.

一方、図７〜図１２で図示された通り、第１ホール配置領域１１２の面積は一つの第１電極１３０の面積の４倍以上、好ましくは６倍以上、さらに好ましくは８倍以上であり得る。第１ホール配置領域１１２の面積が一つの第１電極１３０の面積の４倍未満の場合、ＡＣ １ｋＶ以上の高電圧下で電流が第１貫通ホール１１１を通じて第１金属基板１１０に移動して熱電モジュールの電気的破壊が引き起こされ得る。したがって、高電圧下での応用分野においては、熱電モジュールの電気的破壊を防止するために十分な絶縁距離の確保が重要である。第１ホール配置領域１１２の面積が一つの第１電極１３０の面積の８倍以上である場合、ＡＣ ２．５ｋＶ以上の高電圧下でも電気的破壊が発生しない。これと同様に、第２金属基板１８０に形成された第２ホール配置領域１８２の面積も一つの第２電極１６０の面積の４倍以上、好ましくは６倍以上、さらに好ましくは８倍以上であり得る。 On the other hand, as shown in FIGS. 7 to 12, the area of the first hole arrangement region 112 may be 4 times or more, preferably 6 times or more, and more preferably 8 times or more the area of one first electrode 130. .. When the area of the first hole arrangement region 112 is less than four times the area of one first electrode 130, the current moves to the first metal substrate 110 through the first through hole 111 under a high voltage of AC 1 kV or more, and is thermoelectric. Electrical destruction of the module can be caused. Therefore, in the field of application under high voltage, it is important to secure a sufficient insulation distance to prevent electrical destruction of the thermoelectric module. When the area of the first hole arrangement region 112 is 8 times or more the area of one first electrode 130, no electrical destruction occurs even under a high voltage of AC 2.5 kV or more. Similarly, the area of the second hole arrangement region 182 formed on the second metal substrate 180 is also 4 times or more, preferably 6 times or more, more preferably 8 times or more the area of one second electrode 160. obtain.

また、図７〜図１２に図示された通り、複数の第１電極１３０のうち第１金属基板１１０の第１縁（図示されず）と最も隣接して配置される電極はいずれも周期的に配置され得、第１金属基板１１０の第１縁と最も隣接して配置された電極面を繋ぐ仮想線の開始点と終点間の経路が折り曲げ領域のない直線となるように配置され得る。すなわち、第１金属基板１１０の第１縁と最も隣接したすべての第１電極１３０において、各第１電極１３０の４個の電極面のうち第１金属基板１１０の第１縁と最も隣接した電極面は一方向に沿って、除去された領域なしに第１金属基板１１０の第１縁と同一の間隔を有して配置されることを意味し得る。例えば、第１金属基板１１０の第１縁と最も隣接して配置された電極面を繋ぐ仮想線の開始点と終点間の経路が直線である場合、複数の第１電極１３０のうち第１列（図示されず）のすべての電極は周期的に配置されていることを意味し得る。これによると、第１金属基板１１０に複数の第１電極１３０を配置する時に工程の複雑度を減少させることができ、第２金属基板１８０に配置される第２電極１６０および第１電極１３０と第２電極１６０の間に配置される熱電レッグの配置構造を単純化することができる。また、第１金属基板１１０の縁および第１金属基板１１０の縁と最も隣接して配置された第１電極１３０間の最短距離が一定に維持されるため、第１金属基板１１０の縁と最も隣接して配置された第１電極１３０は均一な電気的特性を有することができる。 Further, as shown in FIGS. 7 to 12, all of the electrodes arranged closest to the first edge (not shown) of the first metal substrate 110 among the plurality of first electrodes 130 are periodic. It can be arranged so that the path between the start point and the end point of the virtual line connecting the electrode surfaces arranged closest to the first edge of the first metal substrate 110 is a straight line without a bending region. That is, in all the first electrodes 130 closest to the first edge of the first metal substrate 110, the electrodes closest to the first edge of the first metal substrate 110 among the four electrode surfaces of each first electrode 130. It can mean that the surfaces are arranged along one direction with the same spacing as the first edge of the first metal substrate 110 without any removed regions. For example, when the path between the start point and the end point of the virtual line connecting the first edge of the first metal substrate 110 and the electrode surface arranged most adjacent to the first edge is a straight line, the first row of the plurality of first electrodes 130 It can mean that all electrodes (not shown) are arranged periodically. According to this, the complexity of the process can be reduced when a plurality of first electrodes 130 are arranged on the first metal substrate 110, and the second electrode 160 and the first electrode 130 arranged on the second metal substrate 180 can be combined with each other. The arrangement structure of the thermoelectric legs arranged between the second electrodes 160 can be simplified. Further, since the shortest distance between the edge of the first metal substrate 110 and the first electrode 130 arranged most adjacent to the edge of the first metal substrate 110 is maintained constant, the edge of the first metal substrate 110 and the most. The first electrodes 130 arranged adjacent to each other can have uniform electrical characteristics.

もし、第１金属基板１１０の第１縁と最も隣接して配置された電極面を繋ぐ仮想線の開始点と終点間の経路が折り曲げ領域を含む場合、複数の第１電極１３０のうち第１列の電極のうちの一部が除去されたり、陥没した領域が含まれて配置の周期性が喪失されることを意味し得る。折り曲げ領域で第１金属基板１１０の第１縁と最も隣接して配置された電極面は、第１列の次の列である第２列（図示されず）に配置された電極面であり得る。ここで、第２列は第１列に比べて第１金属基板１１０の第１縁とさらに遠く配置される列であり、最外郭の列でなくてもよい。貫通ホールを追加に配置するために、折り曲げ領域を含むように第１電極１３０を配置することはできるものの、これによると、前述した通り、高電圧下での応用分野において、十分な絶縁距離が確保されないため熱電モジュールの電気的破壊が発生したり、第１電極部の有効領域が減少するため、その結果、熱電モジュールの効率が低下し得る。 If the path between the start point and the end point of the virtual line connecting the electrode surfaces arranged closest to the first edge of the first metal substrate 110 includes a bending region, the first of the plurality of first electrodes 130 It can mean that some of the electrodes in the row are removed or the depressed areas are included and the periodicity of the arrangement is lost. The electrode surface most adjacent to the first edge of the first metal substrate 110 in the bent region may be the electrode surface arranged in the second row (not shown), which is the next row after the first row. .. Here, the second row is a row arranged farther from the first edge of the first metal substrate 110 than the first row, and does not have to be the outermost row. Although the first electrode 130 can be arranged to include the bent region in order to additionally arrange the through hole, it provides a sufficient insulation distance in the application field under high voltage as described above. Since it is not secured, the thermoelectric module is electrically destroyed, and the effective region of the first electrode portion is reduced, and as a result, the efficiency of the thermoelectric module can be reduced.

これと同様に、複数の第１電極１３０のうち第１金属基板１１０の第１縁と向き合う第２縁（図示されず）と最も隣接した電極（第Ｎ列）、複数の第１電極１３０のうち第１金属基板１１０の第１縁と第２縁の間の第３縁（図示されず）と最も隣接した電極（第１行）および複数の第１電極１３０のうち第１金属基板１１０の第３縁と向き合う第４縁（図示されず）と最も隣接した電極（第Ｍ行）は、いずれも第１金属基板１１０の各縁と最も隣接した電極面を繋ぐ仮想線の開始点と終点間の経路が折り曲げ領域のない直線となるように配置され得るが、ターミナル電極の配置などの設計により、最外郭の列または最外郭の行のうちいずれか一つ、例えば第１列、第Ｎ列、第１行および第Ｍ行のうちいずれか一つのみが例外的な経路を有することができる。例えば、ターミナル電極は最外郭の列または最外郭の行である、第１列、第Ｎ列、第１行および第Ｍ行のうちいずれか一つに配置された第１電極１３０に連結されたり、第１列、第Ｎ列、第１行および第Ｍ行のうちいずれか一つに配置された第１電極１３０から延長され得る。これに伴い、最外郭の列および最外郭の行のうちターミナル電極が配置される一つの列または行を除いた残りの列または行は、第１金属基板１１０の対応する各縁と一定の間隔を有するように配置され得る。 Similarly, of the plurality of first electrodes 130, the electrode (Nth row) closest to the second edge (not shown) facing the first edge of the first metal substrate 110, and the plurality of first electrodes 130. Of the electrodes (first row) closest to the third edge (not shown) between the first edge and the second edge of the first metal substrate 110, and the first metal substrate 110 among the plurality of first electrodes 130. The electrodes (row M) closest to the fourth edge (not shown) facing the third edge are the start points and end points of the virtual lines connecting each edge of the first metal substrate 110 and the electrode surface most adjacent to each other. The path between them can be arranged so that it is a straight line with no bending region, but depending on the design such as the arrangement of the terminal electrodes, either one of the outermost columns or the outermost rows, for example, the first column and the Nth Only one of the columns, the first row and the Mth row can have an exceptional route. For example, the terminal electrode may be connected to the first electrode 130 arranged in any one of the first column, the Nth column, the first row, and the Mth row, which is the outermost column or the outermost row. , 1st column, Nth column, 1st row and Mth row can be extended from the first electrode 130 arranged in any one of the rows. Along with this, the remaining columns or rows of the outermost column and the outermost row except for one column or row in which the terminal electrode is arranged are at regular intervals from the corresponding edges of the first metal substrate 110. Can be arranged to have.

図１３は、本発明の一実施例に係る熱電素子の接合構造を示す。 FIG. 13 shows a junction structure of a thermoelectric element according to an embodiment of the present invention.

図１３を参照すると、熱電素子１００は複数の締結部材４００によって締結され得る。複数の締結部材４００はヒートシンク２２０と第２金属基板１８０を締結したり、ヒートシンク２２０、第２金属基板１８０と第１金属基板（図示されず）を締結したり、ヒートシンク２２０、第２金属基板１８０、第１金属基板（図示されず）と冷却部（図示されず）を締結したり、第２金属基板１８０、第１金属基板（図示されず）と冷却部（図示されず）を締結したり、第２金属基板１８０と第１金属基板（図示されず）を締結することができる。 With reference to FIG. 13, the thermoelectric element 100 can be fastened by a plurality of fastening members 400. The plurality of fastening members 400 may fasten the heat sink 220 and the second metal substrate 180, fasten the heat sink 220, the second metal substrate 180 and the first metal substrate (not shown), or fasten the heat sink 220 and the second metal substrate 180. , The first metal substrate (not shown) and the cooling part (not shown) are fastened, or the second metal substrate 180, the first metal substrate (not shown) and the cooling part (not shown) are fastened. , The second metal substrate 180 and the first metal substrate (not shown) can be fastened.

このために、ヒートシンク２２０、第２金属基板１８０、第１金属基板（図示されず）、冷却部（図示されず）には締結部材４００が貫通する貫通ホールＳが形成され得る。ここで、貫通ホールＳは前述した第２貫通ホール１８１および第１貫通ホール１１１を含むことができる。ここで、第２貫通ホール１８１と締結部材４００の間には別途の絶縁挿入部材４１０がさらに配置され得る。別途の絶縁挿入部材４１０は締結部材４００の外周面を囲む絶縁挿入部材または貫通ホールＳの壁面を囲む絶縁挿入部材であり得る。これによると、熱電素子の絶縁距離を広げることが可能である。 For this reason, through holes S through which the fastening member 400 penetrates may be formed in the heat sink 220, the second metal substrate 180, the first metal substrate (not shown), and the cooling portion (not shown). Here, the through hole S can include the above-mentioned second through hole 181 and the first through hole 111. Here, a separate insulating insertion member 410 may be further arranged between the second through hole 181 and the fastening member 400. The separate insulation insertion member 410 may be an insulation insertion member surrounding the outer peripheral surface of the fastening member 400 or an insulation insertion member surrounding the wall surface of the through hole S. According to this, it is possible to increase the insulation distance of the thermoelectric element.

一方、絶縁挿入部材４１０の形状は図１３（ａ）および図１３（ｂ）に例示された通りであり得る。例えば、図１３（ａ）に例示された通り、絶縁挿入部材４１０は第２金属基板１８０に形成された貫通ホールＳ領域に段差を形成して貫通ホールＳの壁面の一部を囲むように配置され得る。または絶縁挿入部材４１０は第２金属基板１８０に形成された貫通ホールＳ領域に段差を形成して貫通ホールＳの壁面に沿って第２電極（図示されず）が配置される第１面まで延びるように配置されてもよい。 On the other hand, the shape of the insulating insertion member 410 may be as illustrated in FIGS. 13 (a) and 13 (b). For example, as illustrated in FIG. 13A, the insulating insertion member 410 is arranged so as to form a step in the through hole S region formed in the second metal substrate 180 and surround a part of the wall surface of the through hole S. Can be done. Alternatively, the insulating insertion member 410 forms a step in the through hole S region formed in the second metal substrate 180 and extends along the wall surface of the through hole S to the first surface on which the second electrode (not shown) is arranged. It may be arranged as follows.

図１３（ａ）を参照すると、第２金属基板１８０の第２電極と接する第１面の貫通ホールＳの直径ｄ２’は、第１金属基板の第１電極と接する第１面の貫通ホールの直径と同じであり得る。この時、絶縁挿入部材４１０の形状により、第２金属基板１８０の第１面に形成された貫通ホールＳの直径ｄ２’は、第１面の反対面である第２面に形成された貫通ホールＳの直径ｄ２と異なり得る。図示してはいないが、貫通ホールＳ領域に段差を形成せずに第２金属基板１８０の上面の一部にのみ絶縁挿入部材４１０が配置されたり、第２金属基板１８０の上面から貫通ホールＳの壁面の一部又は全部まで絶縁挿入部材４１０が延びるように配置される場合、第２金属基板１８０の第１面に形成された貫通ホールＳの直径ｄ２’は、第１面の反対面である第２面に形成された貫通ホールＳの直径ｄ２と同じでもよい。 Referring to FIG. 13A, the diameter d2'of the through hole S on the first surface in contact with the second electrode of the second metal substrate 180 is the through hole on the first surface in contact with the first electrode of the first metal substrate. Can be the same as the diameter. At this time, due to the shape of the insulating insertion member 410, the diameter d2'of the through hole S formed on the first surface of the second metal substrate 180 is a through hole formed on the second surface opposite to the first surface. It can be different from the diameter d2 of S. Although not shown, the insulating insertion member 410 is arranged only on a part of the upper surface of the second metal substrate 180 without forming a step in the through hole S region, or the through hole S is arranged from the upper surface of the second metal substrate 180. When the insulating insertion member 410 is arranged so as to extend to a part or all of the wall surface of the second metal substrate 180, the diameter d2'of the through hole S formed on the first surface of the second metal substrate 180 is on the opposite surface of the first surface. It may be the same as the diameter d2 of the through hole S formed on a second surface.

図１３（ｂ）を参照すると、絶縁挿入部材４１０の形状によって、第２金属基板１８０の第２電極と接する第１面の貫通ホールＳの直径ｄ２’は、第１金属基板の第１電極と接する第１面の貫通ホールの直径より大きくてもよい。この時、第２金属基板１８０の第１面の貫通ホールＳの直径ｄ２’は第１金属基板の第１面の貫通ホールの直径の１．１〜２．０倍であり得る。第２金属基板１８０の第１面の貫通ホールＳの直径ｄ２’が第１金属基板の第１面の貫通ホールの直径の１．１倍未満であると、絶縁挿入部材４１０の絶縁効果が小さいため熱電素子の絶縁破壊が引き起こされ得、第２金属基板１８０の第１面の貫通ホールＳの直径ｄ２’が第１金属基板の第１面の貫通ホールの直径の２．０倍を超過すると、貫通ホールＳが占める領域の大きさが相対的に増加することになるため第２金属基板１８０の有効面積が減少するようになり、熱電素子の効率が低下し得る。 Referring to FIG. 13B, due to the shape of the insulating insertion member 410, the diameter d2'of the through hole S on the first surface in contact with the second electrode of the second metal substrate 180 is different from that of the first electrode of the first metal substrate. It may be larger than the diameter of the through hole on the first surface in contact. At this time, the diameter d2'of the through hole S on the first surface of the second metal substrate 180 may be 1.1 to 2.0 times the diameter of the through hole on the first surface of the first metal substrate. When the diameter d2'of the through hole S on the first surface of the second metal substrate 180 is less than 1.1 times the diameter of the through hole on the first surface of the first metal substrate, the insulating effect of the insulating insertion member 410 is small. Therefore, insulation destruction of the thermoelectric element may be caused, and if the diameter d2'of the through hole S on the first surface of the second metal substrate 180 exceeds 2.0 times the diameter of the through hole on the first surface of the first metal substrate. Since the size of the region occupied by the through hole S is relatively increased, the effective area of the second metal substrate 180 is reduced, and the efficiency of the thermoelectric element may be reduced.

そして、絶縁挿入部材４１０の形状によって、第２金属基板１８０の第１面に形成された貫通ホールＳの直径ｄ２’は第１面の反対面である第２面に形成された貫通ホールＳの直径ｄ２と異なり得る。前述した通り、第２金属基板１８０の貫通ホールＳ領域に段差が形成されない場合、第２金属基板１８０の第１面に形成された貫通ホールＳの直径ｄ２’は第１面の反対面である第２面に形成された貫通ホールＳの直径ｄ２と同じでもよい。 Then, depending on the shape of the insulating insertion member 410, the diameter d2'of the through hole S formed on the first surface of the second metal substrate 180 is the through hole S formed on the second surface opposite to the first surface. It can be different from the diameter d2. As described above, when a step is not formed in the through hole S region of the second metal substrate 180, the diameter d2'of the through hole S formed on the first surface of the second metal substrate 180 is the opposite surface of the first surface. It may be the same as the diameter d2 of the through hole S formed on the second surface.

本発明の実施例は、第１電極１３０または第２電極１６０のうちで、第１ホール配置領域１１２または第２ホール配置領域１８２と離隔してもそれぞれのホール配置領域を定義する各仮想の線から延びた延長線がなす仮想の空間内には、少なくとも二つの電極の少なくとも一部が重なって第２方向Ｘに配置されるため、それぞれのホール配置領域が形成された制限された空間内で、空間を無駄に使うことなく、複数のＰ型およびＮ型熱電レッグの最適配置が可能である。 In the embodiment of the present invention, each virtual line of the first electrode 130 or the second electrode 160 defines each hole arrangement area even if it is separated from the first hole arrangement area 112 or the second hole arrangement area 182. In the virtual space formed by the extension line extending from, at least a part of at least two electrodes overlaps and is arranged in the second direction X, so that each hole arrangement area is formed in the limited space. It is possible to optimally arrange a plurality of P-type and N-type thermoelectric legs without wasting space.

本発明の実施例に係る熱電素子は発電用装置、冷却用装置、温熱用装置などに作用され得る。具体的には、本発明の実施例に係る熱電素子は主に光通信モジュール、センサ、医療機器、測定機器、航空宇宙産業、冷蔵庫、チラー（ｃｈｉｌｌｅｒ）、自動車通風シート、カップホルダー、洗濯機、乾燥機、ワインセラー、浄水器、センサ用電源供給装置、サーモパイル（ｔｈｅｒｍｏｐｉｌｅ）等に適用され得る。 The thermoelectric element according to the embodiment of the present invention can act on a power generation device, a cooling device, a heating device, and the like. Specifically, the thermoelectric element according to the embodiment of the present invention mainly includes an optical communication module, a sensor, a medical device, a measuring device, an aerospace industry, a refrigerator, a chiller, an automobile ventilation sheet, a cup holder, a washing machine, and the like. It can be applied to a dryer, a wine cellar, a water purifier, a power supply device for a sensor, a thermopile, and the like.

ここで、本発明の実施例に係る熱電素子が医療機器に適用される例として、ＰＣＲ（Ｐｏｌｙｍｅｒａｓｅ Ｃｈａｉｎ Ｒｅａｃｔｉｏｎ）機器がある。ＰＣＲ機器はＤＮＡを増幅してＤＮＡの塩基序列を決定するための装備であり、精密な温度制御が要求され、熱循環（ｔｈｅｒｍａｌ ｃｙｃｌｅ）が必要な機器である。このために、ペルチィエ系熱電素子（Ｐｅｌｔｉｅｒ−ｂａｓｅｄ ｔｈｅｒｍｏｅｌｅｃｔｒｉｃ ｅｌｅｍｅｎｔ）が適用され得る。 Here, as an example in which the thermoelectric element according to the embodiment of the present invention is applied to a medical device, there is a PCR (Polymerase Chain Reaction) device. A PCR device is a device for amplifying DNA and determining the base sequence of DNA, and is a device that requires precise temperature control and a thermal cycle. For this purpose, a Peltier-based thermoelectric element can be applied.

本発明の実施例に係る熱電素子が医療機器に適用される他の例として、光検出器がある。ここで、光検出器は赤外線／紫外線検出器、ＣＣＤ（Ｃｈａｒｇｅ Ｃｏｕｐｌｅｄ Ｄｅｖｉｃｅ）センサ、Ｘ−ｒａｙ検出器、ＴＴＲＳ（Ｔｈｅｒｍｏｅｌｅｃｔｒｉｃ Ｔｈｅｒｍａｌ Ｒｅｆｅｒｅｎｃｅ Ｓｏｕｒｃｅ）等がある。光検出器の冷却（ｃｏｏｌｉｎｇ）のためにペルチィエ系熱電素子が適用され得る。これに伴い、光検出器の内部の温度上昇による波長変化、出力低下および解像力の低下などを防止することができる。 Another example in which the thermoelectric element according to the embodiment of the present invention is applied to a medical device is a photodetector. Here, the photodetector includes an infrared / ultraviolet detector, a CCD (Charge Coupled Device) sensor, an X-ray detector, a TTRS (Thermoelectric Thermal Reference Source), and the like. Pertier thermoelectric elements may be applied for cooling the photodetector. Along with this, it is possible to prevent a wavelength change, a decrease in output, a decrease in resolution, and the like due to an increase in the temperature inside the photodetector.

本発明の実施例に係る熱電素子が医療機器に適用されるさらに他の例として、免疫分析（ｉｍｍｕｎｏａｓｓａｙ）分野、インビトロ診断（Ｉｎ ｖｉｔｒｏ Ｄｉａｇｎｏｓｔｉｃｓ）分野、温度制御および冷却システム（ｇｅｎｅｒａｌ ｔｅｍｐｅｒａｔｕｒｅ ｃｏｎｔｒｏｌ ａｎｄ ｃｏｏｌｉｎｇ ｓｙｓｔｅｍｓ）、物理治療分野、液状チラーシステム、血液／プラズマ温度制御分野などがある。これに伴い、精密な温度制御が可能である。 Yet another example of application of the thermoelectric element according to the embodiment of the present invention to a medical device is in the field of immunoassay, in vitro diagnostics, temperature control and cooling system (general temperature control and cooling systems). ), Physical therapy field, liquid chiller system, blood / plasma temperature control field, etc. Along with this, precise temperature control is possible.

本発明の実施例に係る熱電素子が医療機器に適用されるさらに他の例として、人工心臓がある。これに伴い、人工心臓に電源を供給することができる。 Yet another example in which the thermoelectric element according to the embodiment of the present invention is applied to a medical device is an artificial heart. Along with this, power can be supplied to the artificial heart.

本発明の実施例に係る熱電素子が航空宇宙産業に適用される例として、星追跡システム、熱イメージングカメラ、赤外線／紫外線検出器、ＣＣＤセンサ、ハッブル宇宙望遠鏡、ＴＴＲＳなどがある。これに伴い、イメージセンサーの温度を維持することができる。 Examples of applications of the thermoelectric element according to the embodiment of the present invention to the aerospace industry include a star tracking system, a thermal imaging camera, an infrared / ultraviolet detector, a CCD sensor, a Hubble Space Telescope, and TTRS. Along with this, the temperature of the image sensor can be maintained.

本発明の実施例に係る熱電素子が航空宇宙産業に適用される他の例として、冷却装置、ヒーター、発電装置などがある。 Other examples in which the thermoelectric element according to the embodiment of the present invention is applied to the aerospace industry include a cooling device, a heater, a power generation device, and the like.

この他にも本発明の実施例に係る熱電素子は、その他の産業分野に発電、冷却および温熱のために適用され得る。 In addition to this, the thermoelectric element according to the embodiment of the present invention can be applied to other industrial fields for power generation, cooling and heating.

前記では本発明の好ましい実施例を参照して説明したが、該当技術分野の熟練した当業者は、下記の特許請求の範囲に記載された本発明の思想および領域から逸脱しない範囲内で、本発明を多様に修正および変更できることが理解できるであろう。 Although the above description has been made with reference to preferred embodiments of the present invention, skilled artisans in the art will appreciate the invention within the scope of the invention and areas described in the claims below. It will be appreciated that the invention can be modified and modified in various ways.

Ｃ：冷却部
１０：熱電モジュール
１１０：第１金属基板
１１１：第１貫通ホール
１１２：第１ホール配置領域
１２０：第１樹脂層
１３０：複数の第１電極
１４０：複数のＰ型熱電レッグ
１５０：複数のＮ型熱電レッグ
１６０：複数の第２電極
１７０：第２樹脂層
１８０：第２金属基板
１８１：第２貫通ホール
１８２：第２ホール配置領域
１９０：締結部材
２００：断熱材
２２０：ヒートシンク
２３０：連結部材

C: Cooling unit 10: Thermoelectric module 110: First metal substrate 111: First through hole 112: First hole arrangement area 120: First resin layer 130: Multiple first electrodes 140: Multiple P-type thermoelectric legs 150: Multiple N-type thermoelectric legs 160: Multiple second electrodes 170: Second resin layer 180: Second metal substrate 181: Second through hole 182: Second hole arrangement area 190: Fastening member 200: Insulation material 220: Heat sink 230 : Connecting member

Claims (20)

第１貫通ホールを含む第１金属基板；
前記第１金属基板上に配置された第１絶縁層；
前記第１絶縁層上に配置され複数の第１電極を含む第１電極部；
前記第１電極部上に配置された複数のＰ型およびＮ型熱電レッグ；
前記複数のＰ型およびＮ型熱電レッグ上に配置され複数の第２電極を含む第２電極部；
前記第２電極部上に配置された第２絶縁層；および
前記第２絶縁層上に配置され第２貫通ホールを含む第２金属基板；を含み、
前記第１金属基板は第１電極部が配置された有効領域および前記有効領域の外郭に形成された外郭領域を含み、
前記第２金属基板は第２電極部が配置された有効領域および前記有効領域の外郭に形成された外郭領域を含み、
前記第１貫通ホールは前記第１金属基板の前記有効領域内に形成され 、
前記第２貫通ホールは前記第２金属基板の前記有効領域内に形成され、
前記第１貫通ホールおよび前記第２貫通ホールは互いに対応する位置に形成された、熱電モジュール。 First metal substrate including first through hole;
The first insulating layer arranged on the first metal substrate;
A first electrode portion arranged on the first insulating layer and including a plurality of first electrodes;
A plurality of P-type and N-type thermoelectric legs arranged on the first electrode portion;
A second electrode portion arranged on the plurality of P-type and N-type thermoelectric legs and including a plurality of second electrodes;
A second insulating layer arranged on the second electrode portion; and a second metal substrate arranged on the second insulating layer and including a second through hole;
The first metal substrate includes an effective region in which the first electrode portion is arranged and an outer shell region formed in the outer shell of the effective region.
The second metal substrate includes an effective region in which a second electrode portion is arranged and an outer shell region formed in the outer shell of the effective region.
The first through hole is formed in the effective region of the first metal substrate.
The second through hole is formed in the effective region of the second metal substrate.
A thermoelectric module in which the first through hole and the second through hole are formed at positions corresponding to each other. 前記第１貫通ホールおよび前記第２貫通ホールを通過して前記第１金属基板と前記第２金属基板を固定する締結部材をさらに含む、請求項１に記載の熱電モジュール。 The thermoelectric module according to claim 1, further comprising a fastening member that passes through the first through hole and the second through hole to fix the first metal substrate and the second metal substrate. 前記第１金属基板に配置された複数の第１電極の一部の長さ方向は残りの一部の長さ方向と異なり、
前記第２金属基板に配置された複数の第２電極の一部の長さ方向は残りの一部の長さ方向と異なり、
前記長さ方向は各電極の長幅方向である請求項１に記載の熱電モジュール。 The length direction of a part of the plurality of first electrodes arranged on the first metal substrate is different from the length direction of the remaining part.
The length direction of a part of the plurality of second electrodes arranged on the second metal substrate is different from the length direction of the remaining part.
The thermoelectric module according to claim 1, wherein the length direction is the length direction of each electrode. 前記第１電極部のうち縁領域を除いた複数の第１電極のうち少なくとも二つの電極は長さ方向が第１方向に垂直な第２方向に配置され、残りの電極は長さ方向が前記第１方向に配置され、
前記第２電極部のうち縁領域を除いた複数の第２電極のうち少なくとも二つの電極は長さ方向が第１方向に垂直な第２方向に配置され、残りの電極は長さ方向が前記第１方向に配置される、請求項３に記載の熱電モジュール。 At least two of the plurality of first electrodes of the first electrode portion excluding the edge region are arranged in a second direction whose length direction is perpendicular to the first direction, and the remaining electrodes are said to have a length direction. Arranged in the first direction,
At least two of the plurality of second electrodes of the second electrode portion excluding the edge region are arranged in the second direction whose length direction is perpendicular to the first direction, and the remaining electrodes have the length direction. The thermoelectric module according to claim 3, which is arranged in the first direction. 前記縁領域を除いた複数の第１電極のうち長さ方向が前記第２方向に配置される第１電極の個数は２の倍数個であり、
前記縁領域を除いた複数の第２電極のうち長さ方向が前記第２方向に配置される第２電極の個数は２の倍数個である、請求項４に記載の熱電モジュール。 Of the plurality of first electrodes excluding the edge region, the number of the first electrodes arranged in the second direction in the length direction is a multiple of 2.
The thermoelectric module according to claim 4, wherein the number of the second electrodes arranged in the second direction in the length direction among the plurality of second electrodes excluding the edge region is a multiple of 2. 前記複数の第２電極のうち前記縁領域で互いに対向する二つの列または二つの行に配置された第２電極の少なくとも一部は長さ方向が前記第２方向に配置される、請求項５に記載の熱電モジュール。 5. Of the plurality of second electrodes, at least a part of the second electrodes arranged in two columns or two rows facing each other in the edge region is arranged in the second direction in the length direction. The thermoelectric module described in. 前記第１金属基板は前記第１貫通ホールと最も隣接し互いに隣り合うように配置される第１電極の面をつなぐ仮想の線がなす空間である第１ホール配置領域を含み、
前記第２金属基板は前記第２貫通ホールと最も隣接し互いに隣り合うように配置される第２電極の面をつなぐ仮想の線がなす空間である第２ホール配置領域を含み、
前記第１ホール配置領域に隣接した少なくとも一つの第１電極は長さ方向が前記第２方向に配置され、
前記第２ホール配置領域に隣接した少なくとも一つの第２電極は長さ方向が前記第２方向に配置された、請求項６に記載の熱電モジュール。 The first metal substrate includes a first hole arrangement region which is a space formed by a virtual line connecting the surfaces of the first electrodes arranged so as to be adjacent to each other most adjacent to the first through hole.
The second metal substrate includes a second hole arrangement region which is a space formed by a virtual line connecting the surfaces of the second electrodes arranged so as to be adjacent to each other most adjacent to the second through hole.
At least one first electrode adjacent to the first hole arrangement region is arranged in the second direction in the length direction.
The thermoelectric module according to claim 6, wherein at least one second electrode adjacent to the second hole arrangement region is arranged in the second direction in the length direction. 前記第１金属基板は前記第１貫通ホールと最も隣接し互いに隣り合うように配置される第１電極の面をつなぐ仮想の線がなす空間である第１ホール配置領域を含み、
前記第２金属基板は前記第２貫通ホールと最も隣接し互いに隣り合うように配置される第２電極の面をつなぐ仮想の線がなす空間である第２ホール配置領域を含み、
前記少なくとも一つの第１電極は前記第１ホール配置領域を定義する仮想の線から延びた延長線がなす仮想の空間と少なくとも一部が重なるように配置され、
前記少なくとも一つの第２電極は前記第２ホール配置領域を定義する仮想の線から延びた延長線がなす仮想の空間と少なくとも一部が重なるように配置された、請求項７に記載の熱電モジュール。 The first metal substrate includes a first hole arrangement region which is a space formed by a virtual line connecting the surfaces of the first electrodes arranged so as to be adjacent to each other most adjacent to the first through hole.
The second metal substrate includes a second hole arrangement region which is a space formed by a virtual line connecting the surfaces of the second electrodes arranged so as to be adjacent to each other most adjacent to the second through hole.
The at least one first electrode is arranged so as to at least partially overlap the virtual space formed by the extension line extending from the virtual line defining the first hole arrangement area.
The thermoelectric module according to claim 7, wherein the at least one second electrode is arranged so as to overlap at least a part of a virtual space formed by an extension line extending from the virtual line defining the second hole arrangement region. .. 前記第１貫通ホールは複数個を含み、
前記第１ホール配置領域は前記複数個の前記第１貫通ホール周辺にそれぞれ形成され、
前記第２貫通ホールは複数個を含み、
前記第２ホール配置領域は前記複数個の前記第２貫通ホール周辺にそれぞれ形成された、請求項８に記載の熱電モジュール。 The first through hole includes a plurality of holes.
The first hole arrangement region is formed around the plurality of first through holes, respectively.
The second through hole includes a plurality of holes.
The thermoelectric module according to claim 8, wherein the second hole arrangement region is formed around the plurality of second through holes. 前記複数個の前記第１貫通ホールおよび前記複数個の前記第２貫通ホールは互いに対応する位置に形成された、請求項９に記載の熱電モジュール。 The thermoelectric module according to claim 9, wherein the plurality of the first through holes and the plurality of the second through holes are formed at positions corresponding to each other. 前記第１金属基板の外郭領域に配置された第３貫通ホールをさらに含む、請求項１０に記載の熱電モジュール。 The thermoelectric module according to claim 10, further comprising a third through hole arranged in an outer region of the first metal substrate. 前記第１金属基板の面積に対する前記第２金属基板の面積の比は０．５〜０．９５である、請求項１１に記載の熱電モジュール。 The thermoelectric module according to claim 11, wherein the ratio of the area of the second metal substrate to the area of the first metal substrate is 0.5 to 0.95. 前記締結部材と隣接して配置された絶縁挿入部材をさらに含む、請求項１２に記載の熱電モジュール。 The thermoelectric module according to claim 12, further comprising an insulating insertion member arranged adjacent to the fastening member. 前記第１貫通ホールの直径と前記第２貫通ホールの直径は互いに異なる、請求項１３に記載の熱電モジュール。 The thermoelectric module according to claim 13, wherein the diameter of the first through hole and the diameter of the second through hole are different from each other. 前記第２貫通ホールの直径は前記第１貫通ホールの直径の１．１倍〜２．０倍である、請求項１４に記載の熱電モジュール。 The thermoelectric module according to claim 14, wherein the diameter of the second through hole is 1.1 to 2.0 times the diameter of the first through hole. 前記絶縁挿入部材の一部は前記第２貫通ホール内に配置された、請求項１５に記載の熱電モジュール。 The thermoelectric module according to claim 15, wherein a part of the insulating insertion member is arranged in the second through hole. 前記第１金属基板と前記第１絶縁層間に配置された第３絶縁層をさらに含む、請求項１６に記載の熱電モジュール。 The thermoelectric module according to claim 16, further comprising a third insulating layer arranged between the first metal substrate and the first insulating layer. 前記第２金属基板は互いに離隔した複数の第２金属基板を含み、各第２金属基板は少なくとも一つの第２貫通ホールを含む、請求項１７に記載の熱電モジュール。 The thermoelectric module according to claim 17, wherein the second metal substrate includes a plurality of second metal substrates separated from each other, and each second metal substrate includes at least one second through hole. 互いに離隔した複数の第２金属基板間に絶縁部材が配置された、請求項１８に記載の熱電モジュール。 The thermoelectric module according to claim 18, wherein an insulating member is arranged between a plurality of second metal substrates separated from each other. 請求項１〜請求項１９のいずれか一項に記載された熱電モジュール；および
前記第１金属基板と結合された冷却部を含み、
前記締結部材の一部は前記冷却部内に配置された、発電装置。 The thermoelectric module according to any one of claims 1 to 19, and a cooling unit coupled to the first metal substrate.
A power generation device in which a part of the fastening member is arranged in the cooling unit.
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