JP2020145396A - 積層薄膜の製造方法、太陽電池の製造方法及び太陽電池モジュールの製造方法 - Google Patents
積層薄膜の製造方法、太陽電池の製造方法及び太陽電池モジュールの製造方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 48
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000001301 oxygen Substances 0.000 claims abstract description 49
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 49
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- 229910052802 copper Inorganic materials 0.000 claims abstract description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 38
- 238000000151 deposition Methods 0.000 claims description 37
- 230000008021 deposition Effects 0.000 claims description 35
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 22
- 229940112669 cuprous oxide Drugs 0.000 claims description 22
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 18
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 18
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- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 16
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
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- 229910052712 strontium Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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Abstract
Description
第1実施形態は、積層薄膜と積層薄膜の製造方法に関する。図1に積層薄膜100の断面概念図を示す。図1に示す積層薄膜100は、第1透明電極1、第1透明電極1上に形成された光電変換層2とを有する。
第2実施形態は、太陽電池と太陽電池の製造方法に関する。図5に太陽電池200の断面概念図を示す。図5に示す太陽電池200は、第1透明電極1、光電変換層2、n型層3、第2透明電極4とを有する。第1透明電極1と光電変換層2が積層した積層体は、第1実施形態の積層薄膜100である。光電変換層2は、第1透明電極1とn型層3の間に配置される。n型層3は、光電変換層2と第2透明電極4との間に配置される。光電変換層2とn型層3は、pn接合を形成する。第1透明電極1と光電変換層2は、第1実施形態と共通するためその説明は省略される。例えば、n型層3と第2透明電極4の間などに図示しない中間層を配置することも出来る。光電変換層2よりもナローバンドギャップな光電変換層を有する太陽電池(例えば、Si太陽電池)を第2実施形態の太陽電池200と積層させて多接合型太陽電池とすることが出来る。
第3実施形態は、太陽電池モジュールに関する。図7に太陽電池モジュール300の一部の断面模式図を示す。図7の太陽電池モジュール300は、トップセル301とボトムセル302を有する。なお、太陽電池モジュール300としては、図8の断面模式図に示すようにボトムセル302を省略した実施形態の太陽電池200(図7のトップセル301)を有する単接合型の太陽電池モジュール304とすることもできる。トップセル301の太陽電池には、第2実施形態の太陽電池200を用いる。トップセル301とボトムセル302は、図示しない接着層で接続されていることが好ましい。
第5実施形態は太陽光発電システムに関する。第4実施形態の太陽電池モジュール300は、第5実施形態の太陽光発電システムにおいて、発電を行う発電機として用いることができる。実施形態の太陽光発電システムは、太陽電池モジュールを用いて発電を行うものであって、具体的には、発電を行う太陽電池モジュールと、発電した電気を電力変換する手段と、発電した電気をためる蓄電手段又は発電した電気を消費する負荷とを有する。図10に実施形態の太陽光発電システム400の構成概念図を示す。図10の太陽光発電システムは、太陽電池モジュール401(300)と、電力変換装置402と、蓄電池403と、負荷404とを有する。蓄電池403と負荷404は、どちらか一方を省略しても良い。負荷404は、蓄電池403に蓄えられた電気エネルギーを利用することもできる構成にしてもよい。電力変換装置402は、変圧や直流交流変換などの電力変換を行う回路又は素子を含む装置である。電力変換装置402の構成は、発電電圧、蓄電池403や負荷404の構成に応じて好適な構成を採用すればよい。
チャンバー内で白板ガラス基板上に、裏面側の第1透明電極としてITO透明導電膜、その上にSbドープしたSnO2透明導電膜を堆積する。透明な第1透明電極が形成された部材を1×10−3[Pa]以下になるまでチャンバー内を減圧する。次に、酸素とアルゴンガスの雰囲気中でRFマグネトロンスパッタリング法により500℃で加熱して光電変換層として亜酸化銅化合物を成膜する。このとき酸素分圧は0.035[Pa]で堆積速度は、0.04[μm/min]である。室温でスパッタリング法によりp−亜酸化銅層上にn型のZn0.8Ge0.2Oxを堆積し、その後、表面側の第2透明電極としてAZO透明導電膜を堆積する。また表面側の第2透明電極堆積時には亜酸化銅の酸化を抑制するため室温で成膜しているが、例えばAZOを用いる事により室温でも低抵抗な膜が得られる。AZOのターゲットは、ZnOに対してAl2O3の割合が2wt%とした。反射防止膜を付けて光取り込み量を改善する場合は、その上に反射防止膜として例えば、MgF2を堆積する。
チャンバー内で白板ガラス基板上に、裏面側の第1透明電極としてITO透明導電膜、その上にSbドープしたSnO2透明導電膜を堆積する。透明な第1透明電極が形成された部材を1×10−3[Pa]以下になるまでチャンバー内を減圧する。次に、酸素とアルゴンガスの雰囲気中でDCマグネトロンスパッタリング法により450℃で加熱して光電変換層として亜酸化銅化合物を成膜する。このとき酸素分圧は0.15[Pa]で堆積速度は、0.2[μm/min]である。室温でスパッタリング法によりp−亜酸化銅層上にn型のZn0.8Ge0.2Oxを堆積する。その後、表面側の第2透明電極としてAZO透明導電膜を堆積する。AZOのターゲットは、ZnOに対してAl2O3の割合が2wt%とした。その上に反射防止膜としてMgF2を堆積する。
チャンバー内で白板ガラス基板上に、裏面側の第1透明電極としてITO透明導電膜、その上にSbドープしたSnO2透明導電膜を堆積する。透明な第1透明電極が形成された部材を1×10−3[Pa]以下になるまでチャンバー内を減圧する。次に、酸素とアルゴンガスの雰囲気中でRFマグネトロンスパッタリング法により500℃で加熱して光電変換層として亜酸化銅化合物を成膜する。このとき酸素分圧は0.009[Pa]で堆積速度は、0.04[μm/min]である。室温でスパッタリング法によりp−亜酸化銅層上にn型のZn0.8Ge0.2Oxを堆積する。その後、表面側の第2透明電極としてAZO透明導電膜を堆積する。また表面側の第2透明電極堆積時には亜酸化銅の酸化を抑制するため室温で成膜しているが、例えばAZOを用いる事により室温でも低抵抗な膜が得られる。AZOのターゲットは、ZnOに対してAl2O3の割合が2wt%とした。その上に反射防止膜としてMgF2を堆積する。
明細書中、一部の元素は、元素記号のみで表している。
Claims (8)
- 第1透明電極上に銅を主成分とするターゲットを用いて酸素分圧0.01[Pa]以上10[Pa]以下の雰囲気でスパッタすることによって光電変換層を成膜する工程を含み、
前記光電変換層の成膜において、前記酸素分圧が0.01[Pa]以上4.8[Pa]以下の範囲内であることを満たし、かつ、堆積速度をd[μm/min]とするとき、前記酸素分圧が0.24×d[Pa]以上2.4×d[Pa]以下である積層薄膜の製造方法。 - 100℃以上600℃以下であることを満たし、かつ、酸素分圧が0.01[Pa]以上4.8[Pa]以下である請求項1記載の積層薄膜の製造方法。
- 前記光電変換層の成膜において、スパッタ温度が300℃以上600℃以下であり、前記酸素分圧が0.01[Pa]以上4.8[Pa]以下及び1.5×10+9×e(−30000/スパッタ温度[K])以上である請求項1又は2に記載の積層薄膜の製造方法。
- 前記光電変換層の成膜において、前記堆積速度は、0.02[μm/min]以上4[μm/min]以下である請求項1ないし3のいずれか1項に記載の積層薄膜の製造方法。
- 前記光電変換層の成膜において、前記酸素分圧が0.01[Pa]以上4.8[Pa]以下の範囲内であることを満たし、かつ、堆積速度をd[μm/min]とするとき、前記酸素分圧が0.5×d[Pa]以上1.5×d[Pa]以下である請求項1ないし4のいずれか1項に記載の積層薄膜の製造方法。
- 前記光電変換層は、亜酸化銅を主体とするp型の化合物半導体層である請求項1ないし5のいずれか1項に記載の積層薄膜の製造方法
- 請求項1ないし6のいずれか一項に記載の積層薄膜の製造方法で積層薄膜を製造する太陽電池の製造方法。
- 請求項1ないし6のいずれか一項に記載の積層薄膜の製造方法で積層薄膜を製造する太陽電池モジュールの製造方法。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003282897A (ja) * | 2002-03-20 | 2003-10-03 | Japan Science & Technology Corp | Cu2O薄膜及び太陽電池の製造方法 |
JP2006009083A (ja) * | 2004-06-25 | 2006-01-12 | Bridgestone Corp | Cu2O膜の成膜方法及び太陽電池 |
CN101058484A (zh) * | 2007-03-28 | 2007-10-24 | 杭州电子科技大学 | 一种p型掺氮的氧化亚铜薄膜材料及其制造方法 |
US20120152337A1 (en) * | 2010-12-21 | 2012-06-21 | Tolga Aytug | Hetero-junction photovoltaic device and method of fabricating the device |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006124754A (ja) * | 2004-10-27 | 2006-05-18 | Bridgestone Corp | Cu2O膜、その成膜方法及び太陽電池 |
JP5919738B2 (ja) * | 2011-11-10 | 2016-05-18 | 三菱マテリアル株式会社 | スパッタリングターゲットおよびその製造方法 |
CN102569480B (zh) * | 2012-01-01 | 2014-12-31 | 浙江大学 | 一种纳米结构的氧化亚铜基pin结太阳能电池及其制备方法 |
US20170009334A1 (en) * | 2015-07-09 | 2017-01-12 | Rubicon Technology, Inc. | Hard aluminum oxide coating for various applications |
CN105762219B (zh) * | 2016-05-11 | 2017-05-03 | 重庆大学 | 一种氧化亚铜基多叠层异质结太阳能电池及其制备方法 |
US20200091365A1 (en) | 2018-09-19 | 2020-03-19 | Kabushiki Kaisha Toshiba | Solar cell, multi-junction solar cell, solar cell module, and solar power generation system |
JP7273537B2 (ja) | 2018-09-19 | 2023-05-15 | 株式会社東芝 | 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム |
JP7378940B2 (ja) | 2018-09-19 | 2023-11-14 | 株式会社東芝 | 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム |
US11322627B2 (en) | 2018-09-19 | 2022-05-03 | Kabushiki Kaisha Toshiba | Solar cell, multi-junction solar cell, solar cell module, and solar power generation system |
EP3855510A4 (en) | 2018-09-19 | 2022-04-13 | Kabushiki Kaisha Toshiba | SOLAR CELL, MULTI-JUNCTION SOLAR CELL, SOLAR CELL MODULE AND SOLAR POWER GENERATION SYSTEM |
-
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003282897A (ja) * | 2002-03-20 | 2003-10-03 | Japan Science & Technology Corp | Cu2O薄膜及び太陽電池の製造方法 |
JP2006009083A (ja) * | 2004-06-25 | 2006-01-12 | Bridgestone Corp | Cu2O膜の成膜方法及び太陽電池 |
CN101058484A (zh) * | 2007-03-28 | 2007-10-24 | 杭州电子科技大学 | 一种p型掺氮的氧化亚铜薄膜材料及其制造方法 |
US20120152337A1 (en) * | 2010-12-21 | 2012-06-21 | Tolga Aytug | Hetero-junction photovoltaic device and method of fabricating the device |
Non-Patent Citations (2)
Title |
---|
GAN, J. ET AL.: "Influence of target power on properties of CuxO thin films prepared by reactive radio frequency magn", THIN SOLID FILMS, vol. 594, JPN6019030846, 28 May 2015 (2015-05-28), pages 250 - 255, ISSN: 0004218590 * |
REDDY, A. S. ET AL.: "Properties of dc magnetron sputtered Cu2O films prepared at different sputtering pressures", APPLIED SURFACE SCIENCE, vol. 253, JPN6020006468, 21 December 2006 (2006-12-21), pages 5287 - 5292, ISSN: 0004334372 * |
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Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20200901 |