JP2020119945A - 半導体装置および半導体装置の製造方法 - Google Patents
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- 239000010410 layer Substances 0.000 claims abstract description 138
- 238000005468 ion implantation Methods 0.000 claims abstract description 94
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 113
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 111
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- 238000010438 heat treatment Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
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- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
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- 238000001312 dry etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Abstract
Description
本発明にかかる半導体装置は、ワイドバンドギャップ半導体を用いて構成される。実施の形態においては、ワイドバンドギャップ半導体として例えば炭化珪素(SiC)を用いて作製された炭化珪素半導体装置について、MOSFETを例に説明する。図1は、実施の形態にかかる炭化珪素半導体装置の構造を示す断面図である。図1は、トレンチ型MOSFET50の例を示す。
次に、実施の形態にかかる炭化珪素半導体装置の製造方法について説明する。図6〜図11は、実施の形態にかかる炭化珪素半導体装置の製造途中の状態を模式的に示す断面図である。
2 n型炭化珪素エピタキシャル層
2a 第1n型炭化珪素エピタキシャル層
2b 第2n型炭化珪素エピタキシャル層
3 第1p+型ベース領域
3a 第1p+型領域
3b 第2p+型領域
4 第2p+型ベース領域
5 n型高濃度領域
5a 第1n型領域
5b 第2n型領域
6 p型ベース層
7 n+型ソース領域
8 p++型コンタクト領域
9 ゲート絶縁膜
10 ゲート電極
11 層間絶縁膜
12 ソース電極
13 裏面電極
14 ソース電極パッド
15 ドレイン電極パッド
16 トレンチ
17 n型領域
50 トレンチ型MOSFET
51 プレーナー型MOSFET
Claims (6)
- 第1導電型の半導体基板と、
前記半導体基板のおもて面に設けられた、前記半導体基板より低不純物濃度の第1導電型の第1半導体層と、
前記第1半導体層の、前記半導体基板側に対して反対側の表面層に選択的に設けられた第2導電型の第1ベース領域と、
前記第1半導体層の内部に選択的に設けられた第2導電型の第2ベース領域と、
前記第1半導体層の前記半導体基板に対して反対側の表面に設けられた、第2導電型の第2半導体層と、
前記第2半導体層の表面層に選択的に設けられた第1導電型の第1半導体領域と、
前記第2半導体層および前記第1半導体領域を貫通して前記第1半導体層に達するトレンチと、
前記トレンチ内部にゲート絶縁膜を介して設けられたゲート電極と、
前記ゲート電極上に設けられた層間絶縁膜と、
前記第2半導体層および前記第1半導体領域に接触する第1電極と、
前記半導体基板の裏面に設けられた第2電極と、
を備え、
前記第1ベース領域は前記トレンチの間に設けられ、前記第2ベース領域は前記トレンチの底面に設けられ、
前記第1ベース領域は、前記第2ベース領域と同等の厚さの下部領域と、前記下部領域の表面に設けられた上部領域とからなり、
前記第1ベース領域は、不純物濃度が極大値となるピークを複数有し、前記上部領域と前記下部領域との界面に最も近いピークが、他のピークから最も離れていることを特徴とする半導体装置。 - 前記第1ベース領域は、前記トレンチの底面に最も近いピークが、他のピークから最も離れていることを特徴とする請求項1に記載の半導体装置。
- 前記第1ベース領域は、前記第2ベース領域の前記半導体基板に対して反対側の表面に最も近いピークが、他のピークから最も離れていることを特徴とする請求項1に記載の半導体装置。
- 第1導電型の半導体基板のおもて面に、前記半導体基板より低不純物濃度の第1導電型の第1半導体層を形成する第1工程と、
前記第1半導体層の内部に選択的に第2導電型の第2ベース領域と、前記第2ベース領域と同等の厚さの第1ベース領域の下部領域と、を形成する第2工程と、
前記下部領域の表面に前記第1ベース領域の上部領域を形成する第3工程と、
前記第1半導体層の前記半導体基板に対して反対側の表面に、第2導電型の第2半導体層を形成する第4工程と、
前記第2半導体層の表面層に選択的に第1導電型の第1半導体領域を形成する第5工程と、
前記第2半導体層および前記第1半導体領域を貫通して前記第1半導体層に達するトレンチを形成する第6工程と、
前記トレンチ内部にゲート絶縁膜を介してゲート電極を形成する第7工程と、
前記ゲート電極上に層間絶縁膜を形成する第8工程と、
前記第2半導体層および前記第1半導体領域に接触する第1電極を形成する第9工程と、
前記半導体基板の裏面に第2電極を形成する第10工程と、
を含み、
前記第3工程では、前記上部領域を3回以内のイオン注入により形成し、前記イオン注入の初回の加速エネルギーを、注入したイオンが前記上部領域と前記下部領域との界面に達する値にすることを特徴とする半導体装置の製造方法。 - 前記第3工程では、注入した前記イオンのピークを、前記第2半導体層から0.42μm以上0.53μm以下の深さに形成することを特徴とする請求項4に記載の半導体装置の製造方法。
- 前記第3工程では、前記イオン注入の初回の加速エネルギーを、410keV以上580keV以下にすることを特徴とする請求項4または5に記載の半導体装置の製造方法。
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