JP2020088323A - Wafer manufacturing device - Google Patents

Wafer manufacturing device Download PDF

Info

Publication number
JP2020088323A
JP2020088323A JP2018224982A JP2018224982A JP2020088323A JP 2020088323 A JP2020088323 A JP 2020088323A JP 2018224982 A JP2018224982 A JP 2018224982A JP 2018224982 A JP2018224982 A JP 2018224982A JP 2020088323 A JP2020088323 A JP 2020088323A
Authority
JP
Japan
Prior art keywords
wafer
protective member
grinding
cleaning
peeling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2018224982A
Other languages
Japanese (ja)
Inventor
垣成 清原
Kosei Kiyohara
垣成 清原
桑名　一孝
Kazutaka Kuwana
一孝 桑名
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Abrasive Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Abrasive Systems Ltd filed Critical Disco Abrasive Systems Ltd
Priority to JP2018224982A priority Critical patent/JP2020088323A/en
Priority to KR1020190136614A priority patent/KR20200066168A/en
Priority to CN201911127196.XA priority patent/CN111341694A/en
Priority to TW108142888A priority patent/TWI811489B/en
Publication of JP2020088323A publication Critical patent/JP2020088323A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0069—Other grinding machines or devices with means for feeding the work-pieces to the grinding tool, e.g. turntables, transfer means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/005—Feeding or manipulating devices specially adapted to grinding machines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B24B41/068—Table-like supports for panels, sheets or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B47/00—Drives or gearings; Equipment therefor
    • B24B47/10—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces
    • B24B47/12—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces by mechanical gearing or electric power
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B47/00—Drives or gearings; Equipment therefor
    • B24B47/22—Equipment for exact control of the position of the grinding tool or work at the start of the grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Robotics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)

Abstract

To reduce work man-hours of an operator in a wafer manufacturing process.SOLUTION: In a wafer manufacturing device 1, a wafer comprising a protective member is transferrable from a protective member forming device 2 to a grinding device 3 by a first transfer robot 21, a delivery cassette part 5 and a second transfer robot 31. Further, the wafer whose front face is ground and which comprises the protective member on a rear face is transferrable from the grinding device 3 to a peeling device 4 by holding means of the peeling device 4. The wafer from which the protective member is peeled is transferrable from the peeling device 4 to the grinding device 3 by the holding means. Therefore, intervention of an operator is not required for the transfer of the wafer between the protective member forming device 2 and the grinding device 3 and between the grinding device 3 and the peeling device 4. As a result, work man-hours of the operator in a wafer manufacturing process is reduced.SELECTED DRAWING: Figure 1

Description

本発明は、ウェーハ製造装置に関する。 The present invention relates to a wafer manufacturing device.

電子部品の材料となる半導体ウェーハは、たとえば以下のように製造される。まず、円柱状のインゴットをワイヤーソーでスライスすることによって、アズスライスウェーハを作る。このウェーハに研削あるいはエッチングを施すことによって、うねりと反りとを除去する。 A semiconductor wafer used as a material for electronic components is manufactured, for example, as follows. First, an as-sliced wafer is made by slicing a cylindrical ingot with a wire saw. Waviness and warpage are removed by grinding or etching this wafer.

うねりと反りとを研削によって除去するために、ウェーハの一方の面の全面に、樹脂層を含む保護部材を形成する（たとえば特許文献１）。保護部材の形成後、保護部材を介してウェーハをチャックテーブルによって保持し、ウェーハの他方の面を研削砥石によって研削する。研削後、ウェーハの一方の面から保護部材を剥離し、ウェーハを反転して、ウェーハの他方の面をチャックテーブルによって保持し、ウェーハの一方の面を研削する。これにより、所定の厚みのウェーハが製造される。 In order to remove the waviness and the warp by grinding, a protective member including a resin layer is formed on the entire one surface of the wafer (for example, Patent Document 1). After forming the protective member, the wafer is held by the chuck table through the protective member, and the other surface of the wafer is ground by a grinding wheel. After grinding, the protective member is peeled off from one surface of the wafer, the wafer is turned over, the other surface of the wafer is held by a chuck table, and one surface of the wafer is ground. As a result, a wafer having a predetermined thickness is manufactured.

特開２００９−１４８８６６号公報JP, 2009-148866, A

上記のようなウェーハの製造工程では、ウェーハに保護部材を形成する保護部材形成装置と、ウェーハを研削する研削装置と、保護部材を剥離する剥離装置と、が用いられる。これら複数の装置を使ってウェーハを製造するために、各装置間でウェーハが搬送される。このために、各装置においてカセットにウェーハが収納され、オペレータがカセットを各装置に運んでいる。そのため、オペレータの作業工数が多いという問題がある。 In the above-described wafer manufacturing process, a protective member forming device that forms a protective member on the wafer, a grinding device that grinds the wafer, and a peeling device that peels the protective member are used. In order to manufacture a wafer using these plural apparatuses, the wafer is transferred between the respective apparatuses. For this reason, wafers are stored in cassettes in each device, and an operator carries the cassettes to each device. Therefore, there is a problem that the number of man-hours required for the operator is large.

本発明の目的は、ウェーハの製造工程におけるオペレータの作業工数を少なくすることにある。 An object of the present invention is to reduce the number of man-hours required for an operator in a wafer manufacturing process.

本発明のウェーハ製造装置（本ウェーハ製造装置）は、変形要素を含むウェーハから該変形要素を除去して、所定の厚みのウェーハを製造するウェーハ製造装置であって、ウェーハの一方の面の全面に保護部材を形成する保護部材形成装置と、チャックテーブルによって保持された該ウェーハを、研削砥石によって研削する研削装置と、該ウェーハから該保護部材を剥離する剥離装置と、該保護部材を備えた該ウェーハを該保護部材形成装置から該研削装置に搬送する第１の搬送機構と、該保護部材を備えた該ウェーハを該研削装置から該剥離装置に搬送する第２の搬送機構と、該保護部材が剥離された該ウェーハを該剥離装置から該研削装置に搬送する第３の搬送機構と、を備える。 The wafer manufacturing apparatus of the present invention (the present wafer manufacturing apparatus) is a wafer manufacturing apparatus for manufacturing a wafer having a predetermined thickness by removing the deformable element from a wafer including the deformable element, and A protective member forming device for forming a protective member, a grinding device for grinding the wafer held by a chuck table with a grinding wheel, a peeling device for peeling the protective member from the wafer, and the protective member. A first transfer mechanism for transferring the wafer from the protective member forming device to the grinding device; a second transfer mechanism for transferring the wafer having the protective member from the grinding device to the peeling device; A third transport mechanism that transports the wafer from which the member has been stripped from the stripping device to the grinding device.

本ウェーハ製造装置は、該保護部材が剥離された該ウェーハの外周部分を洗浄する外周洗浄装置をさらに含んでもよい。 The wafer manufacturing apparatus may further include an outer peripheral cleaning device that cleans an outer peripheral portion of the wafer from which the protective member has been peeled off.

本ウェーハ製造装置では、該保護部材形成装置と、該研削装置と、該剥離装置とが、Ｘ方向に並ぶように配置されていてもよい。 In the present wafer manufacturing apparatus, the protective member forming device, the grinding device, and the peeling device may be arranged side by side in the X direction.

本ウェーハ製造装置では、該第１の搬送機構は、該保護部材形成装置と該研削装置との間に配設され、該ウェーハを棚状に収納する受渡カセットと、該受渡カセットが載置されるカセットステージと、該保護部材形成装置に配設され、該保護部材を備えた該ウェーハを該受渡カセットに収納する第１の搬送ロボットと、該研削装置に配設され、該保護部材を備えた該ウェーハを該受渡カセットから取り出す第２の搬送ロボットと、を備えていてもよい。 In the present wafer manufacturing apparatus, the first transfer mechanism is arranged between the protective member forming apparatus and the grinding apparatus, and the delivery cassette for storing the wafer in a shelf shape and the delivery cassette are placed. A cassette stage, a first transfer robot disposed in the protective member forming device and storing the wafer having the protective member in the delivery cassette, and a protective member disposed in the grinding device. And a second transfer robot for taking out the wafer from the delivery cassette.

本ウェーハ製造装置では、該研削装置は、スピンナ洗浄ユニットを含み、該スピンナ洗浄ユニットは、該ウェーハを保持するスピンナテーブルと、該ウェーハに洗浄水を噴き付ける洗浄ノズルと、該スピンナテーブルを回転させる回転手段と、を備えてもよく、該第２の搬送機構は、該スピンナテーブルから該剥離装置に該ウェーハを搬送してもよい。 In this wafer manufacturing apparatus, the grinding apparatus includes a spinner cleaning unit, and the spinner cleaning unit rotates the spinner table that holds the wafer, a cleaning nozzle that sprays cleaning water onto the wafer, and the spinner table. Rotating means may be provided, and the second transfer mechanism may transfer the wafer from the spinner table to the peeling device.

本ウェーハ製造装置では、保護部材形成装置と研削装置との間におけるウェーハの搬送に第１の搬送機構を用いるとともに、研削装置と剥離装置との間でのウェーハＷの搬送に、第２の搬送機構を用いる。このため、これらの装置間におけるウェーハの搬送に、オペレータが介入する必要がない。その結果、ウェーハの製造工程におけるオペレータの作業工数を少なくすることが可能である。 In the present wafer manufacturing apparatus, the first transfer mechanism is used to transfer the wafer between the protective member forming apparatus and the grinding apparatus, and the second transfer mechanism is used to transfer the wafer W between the grinding apparatus and the peeling apparatus. Use the mechanism. Therefore, it is not necessary for the operator to intervene in the transfer of the wafer between these devices. As a result, it is possible to reduce the number of man-hours required for the operator in the wafer manufacturing process.

なお、本ウェーハ製造装置は、上述の外周洗浄装置を含んでもよく、さらに、剥離装置と外周洗浄装置との間でウェーハを搬送する搬送機構を含んでもよい。これにより、剥離装置と外周洗浄装置との間でのウェーハの搬送に、オペレータが介入する必要がないので、オペレータの作業工数をさらに少なくすることが可能である。 The wafer manufacturing apparatus may include the above-described outer periphery cleaning device, and may further include a transfer mechanism that transfers the wafer between the peeling device and the outer peripheral cleaning device. As a result, the operator does not need to intervene in the transfer of the wafer between the peeling device and the outer periphery cleaning device, so that it is possible to further reduce the work man-hours of the operator.

また、本ウェーハ製造装置では、保護部材形成装置と、研削装置と、剥離装置とが、Ｘ方向に並ぶように配置されていると、ウェーハの搬送方向が単純化するため、第１〜第３の搬送機構によるウェーハの搬送を容易化することが可能である。 Further, in the present wafer manufacturing apparatus, if the protective member forming apparatus, the grinding apparatus, and the peeling apparatus are arranged side by side in the X direction, the wafer transfer direction is simplified, so the first to third It is possible to facilitate the transfer of the wafer by the transfer mechanism.

また、本ウェーハ製造装置では、第１の搬送機構が、上述の受渡カセット、カセットステージ、第１の搬送ロボットおよび第２の搬送ロボットを備えることにより、第１の搬送機構によるウェーハの搬送を容易化することができる。 Further, in the present wafer manufacturing apparatus, the first transfer mechanism is provided with the delivery cassette, the cassette stage, the first transfer robot, and the second transfer robot, so that the wafer can be easily transferred by the first transfer mechanism. Can be converted.

また、本ウェーハ製造装置では、研削装置が上述のスピンナ洗浄ユニットを含み、第２の搬送機構がスピンナテーブルから剥離装置にウェーハを搬送してもよい。この構成では、保護部材を剥離する前にウェーハを洗浄することができるので、剥離装置による保護部材の剥離を適切に実施することができる。 Further, in the present wafer manufacturing apparatus, the grinding apparatus may include the spinner cleaning unit described above, and the second transfer mechanism may transfer the wafer from the spinner table to the peeling apparatus. With this configuration, the wafer can be washed before peeling the protective member, so that the peeling device can appropriately peel the protective member.

一実施形態にかかるウェーハ製造装置を示す説明図である。It is an explanatory view showing a wafer manufacturing device concerning one embodiment. ウェーハを示す説明図である。It is explanatory drawing which shows a wafer. ウェーハ製造装置に備えられた受渡カセットを示す斜視図である。It is a perspective view which shows the delivery cassette with which the wafer manufacturing apparatus was equipped. ウェーハ製造装置の保護部材形成装置の構成を示す斜視図である。It is a perspective view which shows the structure of the protection member formation apparatus of a wafer manufacturing apparatus. 保護部材を備えたウェーハの断面図である。It is sectional drawing of the wafer provided with the protection member. ウェーハ製造装置の研削装置の構成を示す斜視図である。It is a perspective view which shows the structure of the grinding device of a wafer manufacturing apparatus. ウェーハ製造装置の剥離装置の構成を示す斜視図であるIt is a perspective view which shows the structure of the peeling apparatus of a wafer manufacturing apparatus. ウェーハから保護部材が剥離される様子を示す説明図である。It is explanatory drawing which shows a mode that a protection member is peeled from a wafer. 図９（ａ）〜（ｃ）は、剥離装置に備えられた外周洗浄装置を示す説明図である。FIG. 9A to FIG. 9C are explanatory views showing the outer periphery cleaning device provided in the peeling device. 他の実施形態にかかるウェーハ製造装置を示す説明図である。It is explanatory drawing which shows the wafer manufacturing apparatus concerning other embodiment.

図１に示すウェーハ製造装置１は、うねり、反り等をはじめとする変形要素を含むウェーハから変形要素を除去して、所定の厚みのウェーハを製造する。このウェーハ製造装置１は、ウェーハに保護部材を形成する保護部材形成装置２、ウェーハを研削する研削装置３、および、ウェーハから保護部材を剥離する剥離装置４を備えている。保護部材形成装置２、研削装置３および剥離装置４は、Ｘ方向に並ぶように配されている。
さらに、ウェーハ製造装置１は、保護部材形成装置２から研削装置３にウェーハを搬送するために用いられる受渡カセット部５を備えている。受渡カセット部５は、保護部材形成装置２と研削装置３との間に配置される。 The wafer manufacturing apparatus 1 shown in FIG. 1 manufactures a wafer having a predetermined thickness by removing deformable elements from a wafer including deformable elements such as waviness and warpage. The wafer manufacturing apparatus 1 includes a protective member forming device 2 that forms a protective member on the wafer, a grinding device 3 that grinds the wafer, and a peeling device 4 that peels the protective member from the wafer. The protection member forming device 2, the grinding device 3, and the peeling device 4 are arranged side by side in the X direction.
Further, the wafer manufacturing apparatus 1 includes a delivery cassette unit 5 used to transfer the wafer from the protective member forming apparatus 2 to the grinding apparatus 3. The delivery cassette unit 5 is arranged between the protective member forming device 2 and the grinding device 3.

図２に示すウェーハＷは、図示しないワイヤーソーマシンによってインゴットから切り出されたアズスライスウェーハである。ウェーハＷは、たとえば円形状に形成されており、表面Ｗａおよび裏面Ｗｂを有している。
ウェーハＷの裏面Ｗｂおよび表面Ｗａは、それぞれ、ウェーハＷの一方の面および他方の面の一例に相当する。 The wafer W shown in FIG. 2 is an as-slice wafer cut out from an ingot by a wire saw machine (not shown). The wafer W is formed, for example, in a circular shape and has a front surface Wa and a back surface Wb.
The back surface Wb and the front surface Wa of the wafer W correspond to an example of one surface and the other surface of the wafer W, respectively.

図１に示す保護部材形成装置２は、ウェーハＷの裏面Ｗｂの全面に、樹脂層を含む保護部材を形成する。保護部材形成装置２は、第１の搬送ロボット２１を有しており、第１の搬送ロボット２１は、保護部材を備えたウェーハＷを受渡カセット部５に収納する。 The protective member forming apparatus 2 shown in FIG. 1 forms a protective member including a resin layer on the entire back surface Wb of the wafer W. The protection member forming apparatus 2 has a first transfer robot 21, and the first transfer robot 21 stores the wafer W provided with the protection member in the delivery cassette unit 5.

受渡カセット部５は、図３に示すように、ウェーハＷを棚状に収納する受渡カセット５１と、受渡カセット５１が載置されるカセットステージ５２とを有している。受渡カセット５１は、ウェーハＷを収納するための複数の棚５１１を備えている。棚５１１は、保護部材形成装置２側から研削装置３側に受渡カセット５１を貫通するように設けられており、棚５１１に対してウェーハＷを出し入れするための、保護部材形成装置２側の第１の開口５１２と、研削装置３側の第２の開口５１３とを備えている。
図１に示した保護部材形成装置２の第１の搬送ロボット２１は、第１の開口５１２を介して、保護部材を備えたウェーハＷを、受渡カセット５１の棚５１１に収納する。 As shown in FIG. 3, the delivery cassette unit 5 has a delivery cassette 51 that stores the wafers W in a shelf shape, and a cassette stage 52 on which the delivery cassette 51 is placed. The delivery cassette 51 includes a plurality of shelves 511 for storing the wafers W. The shelf 511 is provided so as to penetrate the delivery cassette 51 from the protective member forming apparatus 2 side to the grinding apparatus 3 side, and is a first member on the protective member forming apparatus 2 side for loading/unloading the wafer W to/from the shelf 511. The first opening 512 and the second opening 513 on the grinding device 3 side are provided.
The first transfer robot 21 of the protection member forming apparatus 2 shown in FIG. 1 stores the wafer W provided with the protection member in the shelf 511 of the delivery cassette 51 through the first opening 512.

研削装置３は、ウェーハＷの表面Ｗａおよび裏面Ｗｂを研削する。研削装置３は、第２の搬送ロボット３１を有している。第２の搬送ロボット３１は、図３に示した受渡カセット５１の棚５１１から、第２の開口５１３を介して保護部材を備えたウェーハＷを取り出し、研削装置３における所定の位置に載置する。研削装置３は、筐体３００を有しており、そのＹ側の前面には、両面が研削されたウェーハＷを収容するロードポートＬＰが設けられている。 The grinding device 3 grinds the front surface Wa and the back surface Wb of the wafer W. The grinding device 3 has a second transfer robot 31. The second transfer robot 31 takes out the wafer W provided with the protective member from the shelf 511 of the delivery cassette 51 shown in FIG. 3 through the second opening 513, and places it at a predetermined position in the grinding machine 3. .. The grinding device 3 has a housing 300, and a load port LP that accommodates a wafer W whose both surfaces have been ground is provided on the front surface on the Y side.

本実施形態では、受渡カセット５１、カセットステージ５２、第１の搬送ロボット２１および第２の搬送ロボット３１は、保護部材を備えたウェーハＷを保護部材形成装置２から研削装置３に搬送する第１の搬送機構の一例に相当する。 In the present embodiment, the delivery cassette 51, the cassette stage 52, the first transfer robot 21, and the second transfer robot 31 transfer the wafer W having the protection member from the protection member forming apparatus 2 to the grinding apparatus 3. Corresponds to an example of the transport mechanism.

剥離装置４は、研削装置３によって研削されたウェーハＷを取得して、ウェーハＷから保護部材を剥離する。保護部材が剥離されたウェーハＷは、研削装置３に戻される。 The peeling device 4 acquires the wafer W ground by the grinding device 3 and peels the protective member from the wafer W. The wafer W from which the protective member has been peeled off is returned to the grinding device 3.

以下に、ウェーハ製造装置１の動作について説明する。
ウェーハ製造装置１では、まず、保護部材形成装置２が、ウェーハＷの裏面Ｗｂの全面に、樹脂層を含む保護部材を形成する。 The operation of the wafer manufacturing apparatus 1 will be described below.
In the wafer manufacturing apparatus 1, first, the protection member forming device 2 forms a protection member including a resin layer on the entire back surface Wb of the wafer W.

図４に示すように、筐体２００を有する保護部材形成装置２では、まず、第１の搬送ロボット２１が、アズスライスウェーハであるウェーハＷを収容しているカセット２３ａから、１枚のウェーハＷを取り出して、第１支持台２６ａに搬送する。ウェーハ検出部２７が、ウェーハＷの中心位置及び向きを検出する。その後、ウェーハ搬送部２５が、第１支持台２６ａからウェーハＷを搬出して、保持手段２５０に受け渡す。保持手段２５０では、保持テーブル２５２が、ウェーハＷの表面Ｗａを吸着保持する。 As shown in FIG. 4, in the protection member forming apparatus 2 having the housing 200, first, the first transfer robot 21 transfers one wafer W from the cassette 23a containing the wafer W that is an as-sliced wafer. Is taken out and conveyed to the first support base 26a. The wafer detector 27 detects the center position and orientation of the wafer W. Then, the wafer transfer unit 25 carries out the wafer W from the first support base 26 a and transfers it to the holding means 250. In the holding unit 250, the holding table 252 sucks and holds the front surface Wa of the wafer W.

ウェーハＷの保持手段２５０への搬送と並行して、シート載置手段２３０のクランプ部２３２が、紫外線を透過する透明材料からなるシートＦをクランプしてＹ軸方向に移動することにより、シートＦをロール部２１１から引き出す。シートＦは、ガラス製のステージ２２０のシート保持面２２１に吸着保持される。 In parallel with the transportation of the wafer W to the holding unit 250, the clamp unit 232 of the sheet placing unit 230 clamps the sheet F made of a transparent material that transmits ultraviolet rays and moves in the Y-axis direction, so that the sheet F is moved. Is pulled out from the roll portion 211. The sheet F is sucked and held on the sheet holding surface 221 of the glass stage 220.

その後、樹脂供給手段２４０が、樹脂供給ノズル２４１を旋回させることにより、樹脂供給ノズル２４１の供給口２４３を、ステージ２２０の上方に位置づける。続いて、ディスペンサ２４２が、樹脂タンク（図示せず）に収容されている、たとえば紫外線硬化樹脂からなる液状樹脂（図示せず）を吸い、樹脂供給ノズル２４１に送出する。これにより、樹脂供給ノズル２４１から、ステージ２２０に吸着保持されているシートＦに向けて、所定量の液状樹脂が滴下される。 After that, the resin supply unit 240 positions the supply port 243 of the resin supply nozzle 241 above the stage 220 by rotating the resin supply nozzle 241. Subsequently, the dispenser 242 sucks a liquid resin (not shown) made of, for example, an ultraviolet curable resin contained in a resin tank (not shown) and delivers it to the resin supply nozzle 241. As a result, a predetermined amount of liquid resin is dripped from the resin supply nozzle 241 toward the sheet F suction-held on the stage 220.

拡張手段２６０は、昇降板２６４により、保持手段２５０の支持構造２５１を保持している。拡張手段２６０は、モータ２６２によりボールネジ２６１を回動させることにより、昇降板２６４とともに保持手段２５０を下降させる。保持手段２５０の下降に伴い、吸着保持されたウェーハＷの裏面Ｗｂが、ステージ２２０に吸着保持されているシートＦ上の液状樹脂を、所定の厚みを有するように押し拡げる。 The expansion means 260 holds the support structure 251 of the holding means 250 by the lift plate 264. The expansion means 260 lowers the holding means 250 together with the elevating plate 264 by rotating the ball screw 261 with the motor 262. As the holding means 250 descends, the back surface Wb of the sucked and held wafer W pushes and spreads the liquid resin on the sheet F sucked and held by the stage 220 so as to have a predetermined thickness.

その後、硬化手段２７０が、ウェーハＷの裏面Ｗｂによって押し拡げられた液状樹脂に向けて、ステージ２２０を介して、紫外光を照射する。その結果、液状樹脂が硬化して、液状樹脂からなる所定の厚みの樹脂層が、ウェーハＷの裏面Ｗｂに形成される。 Then, the curing unit 270 irradiates the liquid resin spread by the back surface Wb of the wafer W with ultraviolet light through the stage 220. As a result, the liquid resin is cured, and a resin layer having a predetermined thickness made of the liquid resin is formed on the back surface Wb of the wafer W.

その後、ウェーハＷは、ウェーハ搬送部２５によって第２支持台２６ｂに搬送され、シートカッター２８によって、ウェーハＷの外形に沿って、余分なシートＦが切断される。この際、シートＦの径は、ウェーハＷの径よりも少し大きくされる。
このようにして、図５に示すように、ウェーハＷの裏面Ｗｂの全面に、樹脂層ＲおよびシートＦを含む保護部材Ｐが形成される。保護部材Ｐの形成後、第１の搬送ロボット２１が、保護部材Ｐを備えたウェーハＷを、表面Ｗａが上向きとなるように、第１の開口５１２を介して受渡カセット５１に収容する。 After that, the wafer W is transferred to the second support base 26b by the wafer transfer unit 25, and the extra sheet F is cut along the outer shape of the wafer W by the sheet cutter 28. At this time, the diameter of the sheet F is made slightly larger than the diameter of the wafer W.
In this way, as shown in FIG. 5, the protective member P including the resin layer R and the sheet F is formed on the entire back surface Wb of the wafer W. After forming the protection member P, the first transfer robot 21 stores the wafer W provided with the protection member P in the delivery cassette 51 through the first opening 512 so that the front surface Wa faces upward.

保護部材形成装置２による保護部材Ｐの形成後、研削装置３が、ウェーハＷの表面Ｗａを研削する。
図６に示す研削装置３では、まず、第２の搬送ロボット３１が、受渡カセット部５内の保護部材Ｐを備えたウェーハＷを、第２の開口５１３を介して取り出す。第２の搬送ロボット３１は、ウェーハＷを、表面Ｗａが上向きとなるように、仮置きテーブル３２に載置する。そして、第１搬送手段３１３ａがウェーハＷの表面Ｗａを吸着保持し、搬出入領域Ａに位置するチャックテーブル３０２に搬送する。チャックテーブル３０２は、ウェーハＷの裏面Ｗｂに形成された保護部材Ｐを吸着保持する。これにより、表面Ｗａが露出した状態で、ウェーハＷがチャックテーブル３０２に保持される。 After the protection member P is formed by the protection member forming device 2, the grinding device 3 grinds the front surface Wa of the wafer W.
In the grinding device 3 shown in FIG. 6, first, the second transfer robot 31 takes out the wafer W provided with the protective member P in the delivery cassette unit 5 through the second opening 513. The second transfer robot 31 places the wafer W on the temporary placement table 32 so that the front surface Wa faces upward. Then, the first transfer means 313a sucks and holds the front surface Wa of the wafer W and transfers it to the chuck table 302 located in the carry-in/out area A. The chuck table 302 adsorbs and holds the protective member P formed on the back surface Wb of the wafer W. As a result, the wafer W is held on the chuck table 302 with the front surface Wa exposed.

次に、ウェーハＷを保持したチャックテーブル３０２が、搬出入領域Ａから、加工領域Ｂ内に設置されている研削手段３０３の研削ホイール３３４の下方に移動する。そして、チャックテーブル３０２が回転されるとともに、研削砥石３４０を有する研削ホイール３３４が回転される。さらに、研削送り手段３０６が研削手段３０３を下方に送ることにより、回転する研削砥石３４０がウェーハＷの表面Ｗａに接触し、表面Ｗａが研削される。ウェーハＷが所定の厚みとなるまで研削されると、研削送り手段３０６が研削手段３０３を上昇させて、研削が終了する。 Next, the chuck table 302 holding the wafer W moves from the carry-in/out area A to below the grinding wheel 334 of the grinding means 303 installed in the processing area B. Then, the chuck table 302 is rotated and the grinding wheel 334 having the grinding wheel 340 is rotated. Further, the grinding feed means 306 feeds the grinding means 303 downward, whereby the rotating grinding wheel 340 comes into contact with the front surface Wa of the wafer W, and the front surface Wa is ground. When the wafer W is ground to a predetermined thickness, the grinding feed means 306 raises the grinding means 303 and the grinding is completed.

研削終了後、チャックテーブル３０２が搬出入領域Ａに移動し、第２搬送手段３１３ｂが、ウェーハＷの表面Ｗａを吸着保持し、ウェーハＷをスピンナ洗浄ユニット３５０に搬送する。 After the grinding is completed, the chuck table 302 moves to the carry-in/out area A, and the second transfer means 313b sucks and holds the front surface Wa of the wafer W and transfers the wafer W to the spinner cleaning unit 350.

スピンナ洗浄ユニット３５０は、中央に配されたスピンナテーブル３５２、スピンナテーブル３５２から径方向に延びる４本のエッジクランプ３５１、スピンナテーブル３５２およびエッジクランプ３５１を回転させる回転手段３５４、および、Ｚ軸方向を旋回軸として旋回可能な洗浄ノズル３５３を有している。４本のエッジクランプ３５１は、たとえば、略９０度の角度間隔をおいて、スピンナテーブル３５２に取り付けられている。 The spinner cleaning unit 350 includes a spinner table 352 arranged in the center, four edge clamps 351 extending in the radial direction from the spinner table 352, a rotating unit 354 for rotating the spinner table 352 and the edge clamp 351, and a Z-axis direction. It has a cleaning nozzle 353 which can be swung as a swivel axis. The four edge clamps 351 are attached to the spinner table 352, for example, at angular intervals of approximately 90 degrees.

ウェーハＷの表面Ｗａの研削後の洗浄では、スピンナテーブル３５２が、第２搬送手段３１３ｂによって搬送されてきたウェーハＷの裏面Ｗｂを吸着保持する。その後、回転手段３５４が、スピンナテーブル３５２を高速で回転させ、これにより、ウェーハＷが高速回転する。そして、洗浄ノズル３５３からウェーハＷの表面Ｗａに向けて洗浄水が噴射され、表面Ｗａが洗浄される。 In the cleaning after grinding the front surface Wa of the wafer W, the spinner table 352 sucks and holds the back surface Wb of the wafer W transferred by the second transfer unit 313b. After that, the rotating means 354 rotates the spinner table 352 at a high speed, whereby the wafer W rotates at a high speed. Then, the cleaning water is sprayed from the cleaning nozzle 353 toward the front surface Wa of the wafer W to clean the front surface Wa.

洗浄水の噴射が停止された後、回転手段３５４によるウェーハＷの高速回転を維持することにより、ウェーハＷを乾燥させる。この際、図示しないエア用ノズルから高圧エアをウェーハＷに向けて噴射してもよい。乾燥の終了後、スピンナテーブル３５２によるウェーハＷの吸着が解除されて、ウェーハＷは、スピンナテーブル３５２に単に載置された状態となる。このウェーハＷは、剥離装置４に搬送される。 After the injection of the cleaning water is stopped, the wafer W is dried by maintaining the high speed rotation of the wafer W by the rotating means 354. At this time, high-pressure air may be jetted toward the wafer W from an air nozzle (not shown). After completion of the drying, the suction of the wafer W by the spinner table 352 is released, and the wafer W is simply placed on the spinner table 352. The wafer W is transferred to the peeling device 4.

図７に示すように、剥離装置４は、ウェーハＷを保持して搬送するための保持手段４２を備えている。保持手段４２は、ウェーハＷを吸着保持する保持パッド４２１、保持パッド４２１を支持するアーム部４２０、アーム部４２０を支持してＺ軸方向に往復移動させるＺ軸方向移動手段４１３、Ｚ軸方向移動手段４１３を支持する可動板４２９、および、可動板４２９をＹ軸方向に往復移動させるＹ軸方向移動手段４１２を備えている。 As shown in FIG. 7, the peeling apparatus 4 includes a holding unit 42 that holds and conveys the wafer W. The holding means 42 includes a holding pad 421 that sucks and holds the wafer W, an arm portion 420 that supports the holding pad 421, a Z-axis direction moving means 413 that supports the arm portion 420 to reciprocate in the Z-axis direction, and a Z-axis direction movement. The movable plate 429 that supports the means 413 and the Y-axis direction moving means 412 that reciprocates the movable plate 429 in the Y-axis direction are provided.

保持手段４２は、保護部材Ｐを備えたウェーハＷを研削装置３から剥離装置４に搬送する第２の搬送機構と、保護部材Ｐが剥離されたウェーハＷを剥離装置４から研削装置３に搬送する第３の搬送機構との一例に相当する。 The holding means 42 conveys the wafer W having the protective member P from the grinding device 3 to the peeling device 4 and the wafer W having the protective member P peeled from the peeling device 4 to the grinding device 3. This corresponds to an example of the third transport mechanism that does.

剥離装置４では、まず、保持手段４２の保持パッド４２１が、Ｙ軸方向移動手段４１２およびＺ軸方向移動手段４１３によって、剥離装置４に隣接する図６に示した研削装置３のスピンナ洗浄ユニット３５０にまで移動される。そして、保持パッド４２１が、スピンナ洗浄ユニット３５０に載置されているウェーハＷの表面Ｗａを吸着保持する。 In the peeling device 4, first, the holding pad 421 of the holding means 42 is adjacent to the peeling device 4 by the Y-axis direction moving means 412 and the Z-axis direction moving means 413, and the spinner cleaning unit 350 of the grinding device 3 shown in FIG. Moved to. Then, the holding pad 421 sucks and holds the front surface Wa of the wafer W placed on the spinner cleaning unit 350.

その後、保持手段４２は、表面Ｗａが上側になるように、ウェーハＷを保持テーブル４４１上に載置する。保持テーブル４４１は、ウェーハＷを吸着保持し、Ｚ軸方向を回転軸として回転可能である。そして、保持テーブル４４１および外側部分剥離手段４４３が、図５に示したウェーハＷの保護部材Ｐの外側部分だけを、複数箇所（たとえば８箇所）にわたって、ウェーハＷの裏面Ｗｂから剥離する。この剥離の後、保持テーブル４４１によるウェーハＷの吸着が解除される。 After that, the holding unit 42 places the wafer W on the holding table 441 such that the front surface Wa is on the upper side. The holding table 441 holds the wafer W by suction and can rotate about the Z-axis as a rotation axis. Then, the holding table 441 and the outer part peeling means 443 peels only the outer part of the protection member P of the wafer W shown in FIG. 5 from the back surface Wb of the wafer W over a plurality of places (for example, eight places). After this peeling, the suction of the wafer W by the holding table 441 is released.

次に、保持手段４２は、保持テーブル４４１上のウェーハＷを保持パッド４２１によって吸着し、ウェーハＷを全体剥離手段４３の上方の位置に搬送し、その位置に固定する。 Next, the holding means 42 sucks the wafer W on the holding table 441 by the holding pad 421, conveys the wafer W to a position above the whole peeling means 43, and fixes it at that position.

全体剥離手段４３は、把持部４３１、および、把持部４３１をＸ軸方向に沿って移動させる移動部材４３２を含んでいる。把持部４３１は、ウェーハＷの保護部材Ｐにおける、−Ｘ側の剥離された外側部分を把持する。この状態で、移動部材４３２が、把持部４３１を＋Ｘ側に移動させる。ウェーハＷの位置が固定されているため、保護部材Ｐを把持した把持部４３１の移動により、図８に示すように、ウェーハＷの裏面Ｗｂから、保護部材Ｐが剥離される。剥離された保護部材Ｐは、図７に示したボックス４７９に落下する。 The overall peeling unit 43 includes a grip portion 431 and a moving member 432 that moves the grip portion 431 along the X-axis direction. The gripping portion 431 grips the peeled outer portion of the protective member P of the wafer W on the −X side. In this state, the moving member 432 moves the grip portion 431 to the +X side. Since the position of the wafer W is fixed, the protection member P is peeled off from the back surface Wb of the wafer W by the movement of the grip portion 431 that grips the protection member P, as shown in FIG. The peeled protection member P falls into the box 479 shown in FIG. 7.

また、剥離装置４は、ウェーハＷの外周部分を洗浄するための外周洗浄装置６を備えている。保持手段４２は、保護部材Ｐが剥離されたウェーハＷを、外周洗浄装置６に搬送する。 Further, the peeling device 4 includes an outer peripheral cleaning device 6 for cleaning the outer peripheral portion of the wafer W. The holding means 42 carries the wafer W from which the protective member P has been peeled off to the outer periphery cleaning device 6.

図９（ａ）に示すように、保持手段４２は、保持パッド４２１によって吸着保持しているウェーハＷを、表面Ｗａが上向きとなるように、外周洗浄装置６の保持テーブル６３上に載置する。保持テーブル６３は、ウェーハＷの裏面Ｗｂを吸着保持する。 As shown in FIG. 9A, the holding means 42 places the wafer W sucked and held by the holding pad 421 on the holding table 63 of the outer periphery cleaning device 6 so that the front surface Wa faces upward. .. The holding table 63 sucks and holds the back surface Wb of the wafer W.

保持テーブル６３は、ガイドレール６５に沿って移動可能な可動ブロック６４に支持されている。ガイドレール６５の＋Ｘ側の端部には、洗浄ボックス６７が配されている。また、ガイドレール６５は、−Ｘ側の端部に設けられた傾け手段６６によって、矢印Ｃ方向に傾斜することが可能に構成されている。 The holding table 63 is supported by a movable block 64 that can move along the guide rails 65. A cleaning box 67 is arranged at the +X side end of the guide rail 65. Further, the guide rail 65 is configured to be tiltable in the arrow C direction by the tilting means 66 provided at the end portion on the −X side.

保持テーブル６３がウェーハＷを保持した後、保持テーブル６３を支持する可動ブロック６４が、ガイドレール６５に沿って、＋Ｘ方向に移動する。その結果、図９（ｂ）に示すように、ウェーハＷの外周部分が、洗浄ボックス６７に設けられたウェーハ進入口６７１を通過して、上下一対に設けられたスポンジ６７２に挟持される。この状態で、保持テーブル６３が回転するとともに、洗浄水ノズル６７３からスポンジ６７２に対して水が噴出される。これにより、ウェーハＷの外周部分が、スポンジ６７２によって洗浄される。 After the holding table 63 holds the wafer W, the movable block 64 supporting the holding table 63 moves in the +X direction along the guide rail 65. As a result, as shown in FIG. 9B, the outer peripheral portion of the wafer W passes through the wafer entrance 671 provided in the cleaning box 67 and is sandwiched by the pair of upper and lower sponges 672. In this state, the holding table 63 rotates and water is ejected from the cleaning water nozzle 673 to the sponge 672. As a result, the outer peripheral portion of the wafer W is cleaned by the sponge 672.

洗浄水ノズル６７３から供給されてスポンジ６７２に吸収された洗浄水は、スポンジ６７２から滲み出て落下し、洗浄ボックス６７内に溜まっていく。この水を排出するために、傾け手段６６が、図９（ｃ）に示すように、ガイドレール６５を、洗浄ボックス６７が下降する方向に傾斜させる。その結果、洗浄ボックス６７に溜まっていた洗浄水は、洗浄ボックス６７の＋Ｘ方向側に設けられた排水口６７４から排出される。また、洗浄ボックス６７に充満している洗浄水のミストは、洗浄ボックス６７の＋Ｘ方向側に設けられた気液分離装置６７５によって、気体と水とに分離される。分離された水は排水口６７４から排出され、気体は排気口６７６から排出される。 The cleaning water supplied from the cleaning water nozzle 673 and absorbed by the sponge 672 exudes from the sponge 672, falls, and accumulates in the cleaning box 67. In order to discharge this water, the tilting means 66 tilts the guide rail 65 in the direction in which the washing box 67 descends, as shown in FIG. 9C. As a result, the cleaning water accumulated in the cleaning box 67 is discharged from the drain port 674 provided on the +X direction side of the cleaning box 67. Further, the mist of cleaning water filling the cleaning box 67 is separated into gas and water by the gas-liquid separation device 675 provided on the +X direction side of the cleaning box 67. The separated water is discharged from the drain port 674, and the gas is discharged from the exhaust port 676.

ウェーハＷの外周部分の洗浄の終了後、ガイドレール６５が水平に戻されるとともに、可動ブロック６４が、ウェーハＷの全体が洗浄ボックス６７から出されるように、−Ｘ方向に移動する。その後、保持テーブル６３がウェーハＷの吸着を解除し、図７に示した剥離装置４の保持手段４２が、保持テーブル６３上のウェーハＷを保持パッド４２１によって吸着保持する。そして、保持手段４２は、ウェーハＷを、図６に示した研削装置３に搬送し、そのスピンナ洗浄ユニット３５０のスピンナテーブル３５２に、表面Ｗａが上向きとなるように載置する。 After the cleaning of the outer peripheral portion of the wafer W is completed, the guide rail 65 is returned horizontally, and the movable block 64 is moved in the −X direction so that the entire wafer W is taken out from the cleaning box 67. After that, the holding table 63 releases the suction of the wafer W, and the holding means 42 of the peeling device 4 shown in FIG. 7 sucks and holds the wafer W on the holding table 63 by the holding pad 421. Then, the holding means 42 carries the wafer W to the grinding device 3 shown in FIG. 6 and places it on the spinner table 352 of the spinner cleaning unit 350 so that the front surface Wa faces upward.

スピンナテーブル３５２にウェーハＷが載置されると、第２の搬送ロボット３１が、スピンナテーブル３５２上のウェーハＷを吸着保持し、反転して、裏面Ｗｂが上向きとなるように、ウェーハＷを仮置きテーブル３２に載置する。
なお、スピンナテーブル３５２の上方に第２の搬送ロボット３１が待機していて、剥離装置４の保持手段４２が第２の搬送ロボット３１にウェーハＷを受渡し、吸引保持し、反転して、裏面Ｗｂが上向きとなるように、ウェーハＷを仮置きテーブル３２に載置してもよい。 When the wafer W is placed on the spinner table 352, the second transfer robot 31 sucks and holds the wafer W on the spinner table 352 and reverses the wafer W so that the back surface Wb faces upward. Place on the table 32.
Note that the second transfer robot 31 is on standby above the spinner table 352, and the holding means 42 of the peeling device 4 delivers the wafer W to the second transfer robot 31, sucks and holds it, reverses it, and reverses the back surface Wb. The wafer W may be mounted on the temporary storage table 32 so that the wafer W faces upward.

その後、第１搬送手段３１３ａがウェーハＷの裏面Ｗｂを吸着保持し、搬出入領域Ａに位置するチャックテーブル３０２に搬送する。チャックテーブル３０２は、ウェーハＷの表面Ｗａを、裏面Ｗｂが露出するように吸着保持する。 After that, the first transfer unit 313a sucks and holds the back surface Wb of the wafer W, and transfers the back surface Wb to the chuck table 302 located in the loading/unloading area A. The chuck table 302 sucks and holds the front surface Wa of the wafer W so that the back surface Wb is exposed.

次に、ウェーハＷを保持したチャックテーブル３０２が研削ホイール３３４の下方に移動し、チャックテーブル３０２および研削ホイール３３４が回転されるとともに、研削ホイール３３４を含む研削手段３０３が下降される。これにより、研削ホイール３３４とともに回転する研削砥石３４０がウェーハＷの裏面Ｗｂに接触し、裏面Ｗｂが研削される。ウェーハＷが所定の厚みとなるまで研削されると、研削が終了する。 Next, the chuck table 302 holding the wafer W moves below the grinding wheel 334, the chuck table 302 and the grinding wheel 334 are rotated, and the grinding means 303 including the grinding wheel 334 is lowered. As a result, the grinding wheel 340 rotating with the grinding wheel 334 contacts the back surface Wb of the wafer W, and the back surface Wb is ground. When the wafer W is ground to a predetermined thickness, the grinding is completed.

研削終了後、チャックテーブル３０２が搬出入領域Ａに移動し、ウェーハＷの吸着を解除する。そして、第２搬送手段３１３ｂが、ウェーハＷの裏面Ｗｂを吸着保持し、ウェーハＷをスピンナ洗浄ユニット３５０に搬送する。 After the grinding is completed, the chuck table 302 moves to the loading/unloading area A, and the suction of the wafer W is released. Then, the second transfer unit 313b sucks and holds the back surface Wb of the wafer W, and transfers the wafer W to the spinner cleaning unit 350.

ウェーハＷの裏面Ｗｂの研削後の洗浄では、４本のエッジクランプ３５１が、ウェーハＷの外周部分を把持する。その後、回転手段３５４が、スピンナテーブル３５２を高速で回転させる。これにより、スピンナテーブル３５２に取り付けられているエッジクランプ３５１、および、エッジクランプ３５１に把持されているウェーハＷも、高速回転する。そして、洗浄ノズル３５３からウェーハＷの裏面Ｗｂに向けて洗浄水が噴射されるとともに、スピンナテーブル３５２の中央から、ウェーハＷの表面Ｗａに向けて、洗浄水が上向きに噴射される。これにより、ウェーハＷの表面Ｗａおよび裏面Ｗｂがともに洗浄される。 In the cleaning after grinding the back surface Wb of the wafer W, the four edge clamps 351 grip the outer peripheral portion of the wafer W. Then, the rotating means 354 rotates the spinner table 352 at high speed. As a result, the edge clamp 351 attached to the spinner table 352 and the wafer W held by the edge clamp 351 also rotate at high speed. Then, the cleaning water is sprayed from the cleaning nozzle 353 toward the back surface Wb of the wafer W, and the cleaning water is sprayed upward from the center of the spinner table 352 toward the front surface Wa of the wafer W. As a result, both the front surface Wa and the back surface Wb of the wafer W are cleaned.

洗浄水の噴射が停止された後、回転手段３５４によるウェーハＷの高速回転を維持することにより、ウェーハＷを乾燥させる。乾燥の終了後、エッジクランプ３５１によるウェーハＷの把持が解除されて、ウェーハＷは、スピンナテーブル３５２に単に載置された状態となる。第２の搬送ロボット３１は、このウェーハＷを保持して、図１に示したロードポートＬＰに収容する。このようにして、ウェーハＷの表面Ｗａおよび裏面Ｗｂの双方が研削されて、うねり、反り等をはじめとする変形要素が除去され、所定の厚みを有するウェーハＷが得られる。 After the injection of the cleaning water is stopped, the wafer W is dried by maintaining the high speed rotation of the wafer W by the rotating means 354. After the drying is completed, the grip of the wafer W by the edge clamp 351 is released, and the wafer W is simply placed on the spinner table 352. The second transfer robot 31 holds this wafer W and stores it in the load port LP shown in FIG. In this way, both the front surface Wa and the back surface Wb of the wafer W are ground to remove deformation elements such as waviness and warpage, and the wafer W having a predetermined thickness is obtained.

以上のように、ウェーハ製造装置１では、第１の搬送ロボット２１、受渡カセット部５および第２の搬送ロボット３１によって、保護部材形成装置２から研削装置３に、保護部材Ｐを備えたウェーハＷを搬送することができる。さらに、研削装置３から剥離装置４に、剥離装置４の保持手段４２によって、表面Ｗａが研削され裏面Ｗｂに保護部材Ｐを備えたウェーハＷを搬送することができる。そして、保持手段４２によって、剥離装置４から研削装置３に、保護部材Ｐが剥離されたウェーハＷを搬送することが可能である。 As described above, in the wafer manufacturing apparatus 1, the wafer W provided with the protective member P from the protective member forming device 2 to the grinding device 3 by the first transfer robot 21, the delivery cassette unit 5 and the second transfer robot 31. Can be transported. Furthermore, the wafer W having the front surface Wa ground and the back surface Wb provided with the protective member P can be transported from the grinding device 3 to the peeling device 4 by the holding means 42 of the peeling device 4. Then, the holding means 42 can carry the wafer W from which the protective member P has been peeled from the peeling device 4 to the grinding device 3.

このように、ウェーハ製造装置１では、保護部材形成装置２と研削装置３との間、および、研削装置３と剥離装置４との間でのウェーハＷの搬送に、オペレータが介入する必要がない。その結果、ウェーハＷの製造工程におけるオペレータの作業工数を少なくすることが可能である。 As described above, in the wafer manufacturing apparatus 1, the operator need not intervene in the transfer of the wafer W between the protective member forming apparatus 2 and the grinding apparatus 3 and between the grinding apparatus 3 and the peeling apparatus 4. .. As a result, it is possible to reduce the man-hours of the operator in the manufacturing process of the wafer W.

また、ウェーハ製造装置１では、剥離装置４が外周洗浄装置６を含んでおり、さらに、剥離装置４と外周洗浄装置６との間で、保持手段４２がウェーハＷを搬送している。これにより、剥離装置４と外周洗浄装置６との間でのウェーハＷの搬送に、オペレータが介入する必要がないので、オペレータの作業工数をさらに少なくすることが可能である。 Further, in the wafer manufacturing apparatus 1, the peeling device 4 includes the outer periphery cleaning device 6, and the holding means 42 conveys the wafer W between the peeling device 4 and the outer periphery cleaning device 6. As a result, the operator does not need to intervene in the transfer of the wafer W between the peeling device 4 and the outer periphery cleaning device 6, so that the work man-hours of the operator can be further reduced.

また、ウェーハ製造装置１では、保護部材形成装置２と、研削装置３と、剥離装置４とが、Ｘ方向に並ぶように配置されているので、ウェーハの搬送方向が単純化する。このため、ウェーハＷの搬送を容易化することが可能である。 Further, in the wafer manufacturing apparatus 1, since the protection member forming apparatus 2, the grinding apparatus 3, and the peeling apparatus 4 are arranged side by side in the X direction, the wafer transfer direction is simplified. Therefore, it is possible to facilitate the transportation of the wafer W.

また、ウェーハ製造装置１では、研削装置３が、スピンナ洗浄ユニット３５０を含み、保持手段４２がスピンナテーブル３５２から剥離装置４にウェーハＷを搬送している。このため、保護部材Ｐを剥離する前にウェーハＷを洗浄することができるので、剥離装置４による保護部材Ｐの剥離を適切に実施することができる。 Further, in the wafer manufacturing apparatus 1, the grinding apparatus 3 includes the spinner cleaning unit 350, and the holding unit 42 conveys the wafer W from the spinner table 352 to the peeling apparatus 4. For this reason, the wafer W can be washed before peeling the protective member P, and thus the peeling device 4 can appropriately peel the protective member P.

なお、本実施形態では、図３に示すように、受渡カセット部５の受渡カセット５１が、保護部材形成装置２側の第１の開口５１２と研削装置３側の第２の開口５１３とを備えており、第１の搬送ロボット２１および第２の搬送ロボット３１が、これらの開口を介して、棚５１１に対してウェーハＷを出し入れする。 In this embodiment, as shown in FIG. 3, the delivery cassette 51 of the delivery cassette unit 5 includes a first opening 512 on the protective member forming device 2 side and a second opening 513 on the grinding device 3 side. Thus, the first transfer robot 21 and the second transfer robot 31 take the wafer W in and out of the shelf 511 through these openings.

このような受渡カセット部５に代えて、ウェーハ製造装置１は、図１０に示す受渡カセット部５ａおよび制御手段７を備えてもよい。受渡カセット部５ａは、受渡カセット部５の構成において、受渡カセット５１とカセットステージ５２との間に、受渡カセット５１をＺ軸周りに回転させる回転器５３を備えている。制御手段７は、回転器５３を制御して、受渡カセット５１を回転させる。 Instead of such a delivery cassette unit 5, the wafer manufacturing apparatus 1 may include a delivery cassette unit 5a and control means 7 shown in FIG. The delivery cassette unit 5 a includes a rotator 53 that rotates the delivery cassette 51 around the Z axis between the delivery cassette 51 and the cassette stage 52 in the configuration of the delivery cassette unit 5. The control means 7 controls the rotator 53 to rotate the delivery cassette 51.

この構成では、受渡カセット５１が回転可能であるため、第１の開口５１２あるいは第２の開口５１３を、Ｙ側に向けることが可能である。これにより、オペレータは、保護部材形成装置２あるいは研削装置３にアクセスすることなく、受渡カセット部５の正面（Ｙ側）から、直接、ウェーハＷを抜き出すことが可能である。その結果、たとえば、オペレータは、保護部材形成装置２あるいは研削装置３が故障した場合に、これらの装置内に入ることなく、ウェーハＷを安全が回収することが可能である。
また、保護部材形成装置２で形成した保護部材Ｐの状態をオペレータが確認した後、受渡カセットに５１に戻し入れ、研削装置３へ搬送し研削加工させる事ができる。このように形成した保護部材Ｐの確認は、液状樹脂Ｐを供給する液状樹脂タンクを交換したときなどに行っており、液状樹脂タンクの交換直後に形成した保護部材Ｐに気泡が入っていないことを確認し、気泡が入っていたら受渡カセット５１に戻し入れないので、研削不良を防止する事ができる。 In this configuration, since the delivery cassette 51 is rotatable, the first opening 512 or the second opening 513 can be directed to the Y side. As a result, the operator can directly take out the wafer W from the front surface (Y side) of the delivery cassette unit 5 without accessing the protective member forming device 2 or the grinding device 3. As a result, for example, when the protective member forming device 2 or the grinding device 3 fails, the operator can safely recover the wafer W without going into these devices.
Further, after the operator confirms the state of the protective member P formed by the protective member forming apparatus 2, it can be returned to the delivery cassette 51, conveyed to the grinding apparatus 3 and ground. The confirmation of the protective member P formed in this way is performed when the liquid resin tank for supplying the liquid resin P is replaced, and the protective member P formed immediately after the replacement of the liquid resin tank does not contain air bubbles. If the air bubbles are present, they cannot be returned to the delivery cassette 51, so that grinding failure can be prevented.

１：ウェーハ製造装置、
２：保護部材形成装置、２１：第１の搬送ロボット、２３ａ：カセット、
２５：ウェーハ搬送部、２８：シートカッター、２００：筐体、２２０：ステージ、
２４１：樹脂供給ノズル、２５０：保持手段、２５１：支持構造、２５２：保持テーブル、２６０：拡張手段、２７０：硬化手段、
３：研削装置、３１：第２の搬送ロボット、３２：仮置きテーブル、
３０２：チャックテーブル、３４０：研削砥石、
３５０：スピンナ洗浄ユニット、３５１：エッジクランプ、
３５２：スピンナテーブル、３５３：洗浄ノズル、３５４：回転手段、
４：剥離装置、４２：保持手段、４７９：ボックス、
４１２：Ｙ軸方向移動手段、４１３：Ｚ軸方向移動手段、４２０：アーム部、
４２１：保持パッド、４２９：可動板、
４３：全体剥離手段、４３１：把持部、４３２：移動部材、
４４１：保持テーブル、４４３：外側部分剥離手段、
５，５ａ：受渡カセット部、５１：受渡カセット、５２：カセットステージ、
５３：回転器、５１１：棚、５１２：第１の開口、５１３：第２の開口、
６：外周洗浄装置、６３：保持テーブル、６４：可動ブロック、
６５：ガイドレール、６６：傾け手段、６７：洗浄ボックス、
６７１：ウェーハ進入口、６７２：スポンジ、６７３：洗浄水ノズル、
６７４：排水口、６７５：気液分離装置、６７６：排気口、
７：制御手段、
Ｗ：ウェーハ、Ｗａ：表面、Ｗｂ：裏面、Ｐ：保護部材、Ｒ：樹脂層、Ｆ：シート 1: Wafer manufacturing equipment,
2: protective member forming device, 21: first transfer robot, 23a: cassette,
25: Wafer transfer unit, 28: Sheet cutter, 200: Housing, 220: Stage,
241: Resin supply nozzle, 250: Holding means, 251: Support structure, 252: Holding table, 260: Expansion means, 270: Curing means,
3: grinding device, 31: second transfer robot, 32: temporary table,
302: chuck table, 340: grinding wheel,
350: Spinner cleaning unit, 351: Edge clamp,
352: Spinner table, 353: Cleaning nozzle, 354: Rotating means,
4: peeling device, 42: holding means, 479: box,
412: Y-axis direction moving means, 413: Z-axis direction moving means, 420: Arm part,
421: holding pad, 429: movable plate,
43: whole peeling means, 431: gripping portion, 432: moving member,
441: holding table, 443: outer part peeling means,
5, 5a: Delivery cassette part, 51: Delivery cassette, 52: Cassette stage,
53: rotator, 511: shelf, 512: first opening, 513: second opening,
6: peripheral cleaning device, 63: holding table, 64: movable block,
65: guide rail, 66: tilting means, 67: washing box,
672: Wafer entrance, 672: Sponge, 673: Cleaning water nozzle,
674: drainage port, 675: gas-liquid separation device, 676: exhaust port,
7: control means,
W: wafer, Wa: front surface, Wb: back surface, P: protective member, R: resin layer, F: sheet

Claims (5)

変形要素を含むウェーハから該変形要素を除去して、所定の厚みのウェーハを製造するウェーハ製造装置であって、
ウェーハの一方の面の全面に保護部材を形成する保護部材形成装置と、
チャックテーブルによって保持された該ウェーハを、研削砥石によって研削する研削装置と、
該ウェーハから該保護部材を剥離する剥離装置と、
該保護部材を備えた該ウェーハを該保護部材形成装置から該研削装置に搬送する第１の搬送機構と、
該保護部材を備えた該ウェーハを該研削装置から該剥離装置に搬送する第２の搬送機構と、
該保護部材が剥離された該ウェーハを該剥離装置から該研削装置に搬送する第３の搬送機構と、
を備えるウェーハ製造装置。 A wafer manufacturing apparatus for manufacturing a wafer having a predetermined thickness by removing the deformable element from a wafer including the deformable element,
A protective member forming device for forming a protective member on the entire one surface of the wafer;
A grinding device for grinding the wafer held by the chuck table with a grinding wheel,
A stripping device for stripping the protective member from the wafer,
A first transfer mechanism that transfers the wafer having the protective member from the protective member forming apparatus to the grinding apparatus;
A second transfer mechanism for transferring the wafer having the protective member from the grinding device to the peeling device;
A third transport mechanism that transports the wafer from which the protective member has been stripped from the stripping device to the grinding device;
Wafer manufacturing apparatus including. 該保護部材が剥離された該ウェーハの外周部分を洗浄する外周洗浄装置をさらに含む、
請求項１記載のウェーハ製造装置。 Further comprising a peripheral cleaning device for cleaning the peripheral portion of the wafer from which the protective member has been peeled off,
The wafer manufacturing apparatus according to claim 1. 該保護部材形成装置と、該研削装置と、該剥離装置とが、Ｘ方向に並ぶように配置されている、
請求項１記載のウェーハ製造装置。 The protective member forming device, the grinding device, and the peeling device are arranged side by side in the X direction.
The wafer manufacturing apparatus according to claim 1. 該第１の搬送機構は、
該保護部材形成装置と該研削装置との間に配設され、該ウェーハを棚状に収納する受渡カセットと、
該受渡カセットが載置されるカセットステージと、
該保護部材形成装置に配設され、該保護部材を備えた該ウェーハを該受渡カセットに収納する第１の搬送ロボットと、
該研削装置に配設され、該保護部材を備えた該ウェーハを該受渡カセットから取り出す第２の搬送ロボットと、を備えている、
請求項１記載のウェーハ製造装置。 The first transport mechanism is
A delivery cassette that is arranged between the protective member forming device and the grinding device, and stores the wafer in a shelf shape;
A cassette stage on which the delivery cassette is placed,
A first transfer robot disposed in the protective member forming device and storing the wafer having the protective member in the delivery cassette;
A second transfer robot which is disposed in the grinding device and takes out the wafer having the protective member from the delivery cassette;
The wafer manufacturing apparatus according to claim 1. 該研削装置は、スピンナ洗浄ユニットを含み、
該スピンナ洗浄ユニットは、該ウェーハを保持するスピンナテーブルと、該ウェーハに洗浄水を噴き付ける洗浄ノズルと、該スピンナテーブルを回転させる回転手段と、を備え、
該第２の搬送機構は、該スピンナテーブルから該剥離装置に該ウェーハを搬送する、
請求項１記載のウェーハ製造装置。 The grinding apparatus includes a spinner cleaning unit,
The spinner cleaning unit includes a spinner table that holds the wafer, a cleaning nozzle that sprays cleaning water onto the wafer, and a rotating unit that rotates the spinner table.
The second transfer mechanism transfers the wafer from the spinner table to the peeling device,
The wafer manufacturing apparatus according to claim 1.
JP2018224982A 2018-11-30 2018-11-30 Wafer manufacturing device Pending JP2020088323A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018224982A JP2020088323A (en) 2018-11-30 2018-11-30 Wafer manufacturing device
KR1020190136614A KR20200066168A (en) 2018-11-30 2019-10-30 Wafer manufacturing apparatus
CN201911127196.XA CN111341694A (en) 2018-11-30 2019-11-18 Wafer manufacturing apparatus
TW108142888A TWI811489B (en) 2018-11-30 2019-11-26 Wafer fabrication device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018224982A JP2020088323A (en) 2018-11-30 2018-11-30 Wafer manufacturing device

Publications (1)

Publication Number Publication Date
JP2020088323A true JP2020088323A (en) 2020-06-04

Family

ID=70908948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018224982A Pending JP2020088323A (en) 2018-11-30 2018-11-30 Wafer manufacturing device

Country Status (4)

Country Link
JP (1) JP2020088323A (en)
KR (1) KR20200066168A (en)
CN (1) CN111341694A (en)
TW (1) TWI811489B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023162714A1 (en) * 2022-02-25 2023-08-31 株式会社荏原製作所 Substrate polishing device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003179023A (en) * 2001-12-11 2003-06-27 Tokyo Electron Ltd Processing apparatus
JP2007235068A (en) * 2006-03-03 2007-09-13 Tokyo Seimitsu Co Ltd Wafer machining method
JP2010125488A (en) * 2008-11-28 2010-06-10 Apic Yamada Corp Cutting apparatus
JP2012151275A (en) * 2011-01-19 2012-08-09 Disco Abrasive Syst Ltd Resin peeling device and grinding device
JP2018029131A (en) * 2016-08-18 2018-02-22 株式会社ディスコ Peeling method and peeling apparatus
JP2018113393A (en) * 2017-01-13 2018-07-19 株式会社ディスコ Wafer cleaning device
JP2018125323A (en) * 2017-01-30 2018-08-09 株式会社ディスコ Protection member formation device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5089370B2 (en) 2007-12-21 2012-12-05 株式会社ディスコ Resin coating method and apparatus

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003179023A (en) * 2001-12-11 2003-06-27 Tokyo Electron Ltd Processing apparatus
JP2007235068A (en) * 2006-03-03 2007-09-13 Tokyo Seimitsu Co Ltd Wafer machining method
JP2010125488A (en) * 2008-11-28 2010-06-10 Apic Yamada Corp Cutting apparatus
JP2012151275A (en) * 2011-01-19 2012-08-09 Disco Abrasive Syst Ltd Resin peeling device and grinding device
JP2018029131A (en) * 2016-08-18 2018-02-22 株式会社ディスコ Peeling method and peeling apparatus
JP2018113393A (en) * 2017-01-13 2018-07-19 株式会社ディスコ Wafer cleaning device
JP2018125323A (en) * 2017-01-30 2018-08-09 株式会社ディスコ Protection member formation device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023162714A1 (en) * 2022-02-25 2023-08-31 株式会社荏原製作所 Substrate polishing device

Also Published As

Publication number Publication date
KR20200066168A (en) 2020-06-09
TW202022940A (en) 2020-06-16
CN111341694A (en) 2020-06-26
TWI811489B (en) 2023-08-11

Similar Documents

Publication Publication Date Title
JP5478586B2 (en) Cleaning device, peeling system, cleaning method, program, and computer storage medium
JP6679157B2 (en) Transfer mechanism of processing equipment
KR20020089180A (en) Wafer planarization apparatus
JP2007214457A (en) Wafer processing equipment and method therefor
JP2012151275A (en) Resin peeling device and grinding device
JP2020096177A (en) Wafer dividing apparatus
JP2013033925A (en) Cleaning method, program, computer storage medium, cleaning device, and peeling system
US9159623B2 (en) Wafer processing method for removing organic debris
JP6210847B2 (en) Cutting apparatus and cutting method
JP2011003611A (en) Grinding method and grinding device for wafer
JP6641209B2 (en) Protective member forming device
JP6973931B2 (en) Cutting equipment
JP5964548B2 (en) Wafer processing equipment
JP2020088323A (en) Wafer manufacturing device
JP5192999B2 (en) Ionized air supply program
JP2018176366A (en) Cleaning apparatus for peripheral edge of substrate, cleaning method for peripheral edge of substrate and storage medium
TW202035068A (en) Processing device including a chuck platform, a processing means, a cassette, a cassette carrying portion, a moving-out means, a temporary storage means, and a conveying means
JP5563530B2 (en) Peeling apparatus, peeling system, peeling method, program, and computer storage medium
JP7051225B2 (en) Processing method and processing equipment for workpieces
JP2001274118A (en) Apparatus for processing irregularities
JP2015135888A (en) Cutting device
JP2019192853A (en) Cleaning apparatus
JP7294872B2 (en) processing equipment
JP2011040603A (en) Processing method and grinding apparatus of wafer
JP6976660B2 (en) Processing equipment

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210921

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20220916

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20221018

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20230411