JP2020056110A - 焼結材料、及びそれを用いる接着方法 - Google Patents
焼結材料、及びそれを用いる接着方法 Download PDFInfo
- Publication number
- JP2020056110A JP2020056110A JP2019216135A JP2019216135A JP2020056110A JP 2020056110 A JP2020056110 A JP 2020056110A JP 2019216135 A JP2019216135 A JP 2019216135A JP 2019216135 A JP2019216135 A JP 2019216135A JP 2020056110 A JP2020056110 A JP 2020056110A
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- JP
- Japan
- Prior art keywords
- substrate
- metal
- film
- die
- core
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- 230000008569 process Effects 0.000 claims description 96
- 229910052751 metal Inorganic materials 0.000 claims description 64
- 239000002184 metal Substances 0.000 claims description 64
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 50
- 229910052709 silver Inorganic materials 0.000 claims description 38
- 239000004332 silver Substances 0.000 claims description 37
- 239000000843 powder Substances 0.000 claims description 28
- 239000002923 metal particle Substances 0.000 claims description 27
- 238000003475 lamination Methods 0.000 claims description 25
- 239000002105 nanoparticle Substances 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 15
- 239000011258 core-shell material Substances 0.000 claims description 15
- 238000001035 drying Methods 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229920000307 polymer substrate Polymers 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
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- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 3
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- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 3
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- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- 239000000123 paper Substances 0.000 description 2
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- 238000007789 sealing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
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- 239000004593 Epoxy Substances 0.000 description 1
- 229920005733 JONCRYL® 682 Polymers 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/1017—Multiple heating or additional steps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/07—Metallic powder characterised by particles having a nanoscale microstructure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/22—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces for producing castings from a slip
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
- B22F5/006—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of flat products, e.g. sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/06—Solder feeding devices; Solder melting pans
- B23K3/0607—Solder feeding devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3006—Ag as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y10/00—Processes of additive manufacturing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
Description
・適切なステンシルを用いて、ペーストをプリントし、担体シートの上に膜を形成する工程
・前記膜を乾燥し、溶媒を全て蒸発させる工程
・前記膜を、厚いシリコーンパッドの上に載置する工程
・ウェハからダイをピックアップする工程
・前記担体シート上で、ダイパッドを、プリント、乾燥されたペースト堆積物に合わせて配列する工程
・前記ダイを押圧し、これをリフティングして、前記ペースト堆積物を前記ダイパッドに転写させる工程
・選択した温度で、適切な配置力を用いて、前記ダイを基板の上に載置する工程
・得られたアセンブリをオーブン内で所定時間、所定温度にて焼結する工程
・適切なステンシルを用いて、ペーストをプリントし、担体シートの上に膜を形成する工程
・前記膜を乾燥し、溶媒を全て蒸発させる工程
・前記膜を、厚いシリコーンパッドの上に載置する工程
・ダイシングしたウェハを、パターン化膜の上に載置し、ダイパッドをペースト堆積物に合わせて配列させる工程
・加圧及び加熱を行い、前記ペースト堆積物を前記膜から前記ダイシングしたウェハに転写させる工程
(10〜90)wt% Agシェル及び(90〜10)wt% Cu/Niコア
(10〜90)wt% 金属シェル及び(90〜10)wt% 金属コア
図13は、100ミクロン厚ステンシルを用いて、ナノ銀ペーストでプリントしたリードフレームの例を示す。ステンシル厚は、通常、ボンドライン厚みを決める。プリンティング後、リードフレームを、130℃で30分間オーブンで乾燥した。プロセスの実施に用いた装置として、ESEC(スイス)から入手可能なソフトソルダーダイボンダを用いた。標準的な装置を改造して、ピックアップアームに加熱オプションを設けた。図14は、リードフレームの温度を150℃未満に維持した各領域で用いた温度設定を示す。加熱領域1〜6における温度は、ペーストを過熱及び予焼結しないように、150℃未満に設定した。接着プロセスを行った領域7における温度は、約300℃〜約400℃に設定し、領域8は、同一の温度に設定した。プリントされたリードフレームを、加熱領域に割り当てる(indexed)機器に、0.5〜1秒間のボンディング時間を与える速度で投入した。図15は、接着されたダイを有するリードフレームを示す。ソフトソルダーボンダにおけるダイの接着後、リードフレームの一部を、300℃で約10分間、オーブンで加熱処理(ポスト焼結)し、リードフレームに対するダイ接着を向上させた。典型的なダイシェア力は、約20MPaであった。
1つ以上の実施形態によれば、ディスペンシングによるダイ接着プロセスは、ダイサイズ及び装置によって変わり得る。第1のプロセスにおいては、ペーストをディスペンスし、続いて、非粘着性表面(例えば、テフロン(登録商標)パッドなど)を用いて平坦化することができる。次に、前記ペーストを、例えば、約130℃で約30分間、乾燥することができる。次に、前記ダイを載置して、約250℃〜300℃の温度で焼結することができる。第2のプロセスにおいては、ペーストをディスペンスすることができ、ダイを、濡れた表面の上に最小限の力で載置することができる。次に、前記ペーストを、例えば、約130℃で約20〜30分間、乾燥することができる。次に、前記ダイを載置して、約250℃〜300℃の温度で焼結することができる。図18は、この第2のプロセスによって接着されたダイを示す。第3のプロセスにおいては、ペーストをディスペンスし、続いて、一部を軟らかい状態に維持するように部分的に乾燥することができる。幾つかの非限定的な実施形態においては、部分乾燥は、約70℃で約5分間であることができる。次に、部分乾燥に続いて、前記ダイを載置して、約250℃〜300℃の温度で焼結することができる。図19は、この第3のプロセスによって接着されたダイを示す。
ウェハ積層プロセスを実施した。裏側が銀で金属化された円形のシリコーンウェハをアルミニウム板に載置した。焼結膜のシートを前記ウェハに載置し、シリコーンラバーパッドを前記焼結膜の上に載置した。次に、前記シリコーンラバーパッドをテフロン(登録商標)箔で被覆した。得られたアセンブリを、予加熱プラテン(130℃)間に載置し、約1MPaの圧力を3分間印加した。積層後のウェハと膜を図20Aに示す。次に、図20Bに示すように、焼結膜のシートを除去した。膜の円形部分を、シリコンウェハに積層し、前記シート上のバッキング層の一部を露出させ、焼結膜の残りの部分をバッキング層の上に残した。積層されたウェハを図20Cに示す。次に、積層されたウェハを1時間約130℃でベークした。
1つ以上の実施形態にしたがって、ペースト及び膜の両方の形態で同じ焼結材料を用いて、ダイを基板に焼結した。前記ペースト及び膜による焼結のプロセス条件は、大気中10MPaで約250℃とした。焼結時間が約40秒間、60秒間、及び80秒間でデータを集めた。前記ペースト及び膜の両方を用いて形成された結合について、ダイシェアテストを行った。結果を図21に示す。両形態において同等の結果が示されている。
以下の装置パラメータの各種組合せを用いて、1つ以上の実施形態に係る、焼結膜を用いるピックスタンププロセスを、小さいダイの場合と大きいダイの場合とで実施した。
装置変数
ダイ 5×5
12×12
バッキング箔 薄い(35μm)
厚い(75μm)
スタンピング支持体 ステンレス鋼製キャビティ箔
80ミクロン厚
120ミクロン厚
180ミクロン厚
シリコンラバー
PCB基板
1つ以上の実施形態にしたがって、焼結膜を有する金及びDBC基板にダイを接着した。曲げ試験の前の画像を図22Aに示し、曲げ試験の後の画像を図22Bに示す。曲げ試験から、金及びDBC基板からのダイの剥離がないことが示された。図23Aは、サーマルショック前のCSAM画像を示す。図23Bは、−50℃から165℃のリキッド・ツー・リキッドサーマルショック500サイクル後の音響顕微鏡画像を示す。剥離も結合劣化もないことが示され、このことは、結合の完全性を示す。
シリコン被覆ポリエステル膜/マイラの上にペーストを1ミルステンシルでプリントした。プリントされたパターンは、図26に示すように、異なるピッチ範囲(60um〜150um)を有する360ミクロン×60ミクロン寸法の2種類のパッドデザインとした。次に、ポリエステル/マイラシートの上にプリントされたパターンを60℃で3分間加熱することにより乾燥した。
図32に係るプロセスを行った。ペーストをステンシルでシリコン被覆ポリエステル膜/マイラの上にプリントした。次に、ポリエステル/マイラの上にプリントされたパターンを、60℃で3分間加熱することにより乾燥した。完全に乾燥したプリントパターンをダイ側(Au/Ni仕上げのシリコン)に、500グラムの圧力下で85℃にて(ツール加熱)スタンピングすることにより転写した。
図32に係るプロセスを行った。ペーストをステンシルでシリコン被覆ポリエステル膜/マイラの上にプリントした。次に、ポリエステル/マイラの上にプリントされたパターンを、60℃で3分間加熱することにより乾燥した。完全に乾燥したプリントパターンをダイ側(Au/Ni仕上げのシリコン)に、500グラムの圧力下で120℃にて(ツール加熱)スタンピングすることにより転写した。
Claims (17)
- フリップチップ用途の金属粒子の膜を製造するための方法であって、
0.001〜10μmのd50範囲を有する金属粉末を含む材料を基板の上に適用することと、
前記基板の上の前記材料を乾燥し、前記膜を形成することとを含み、
前記金属粉末が、コアシェル構造ナノ粒子を含み、
前記コアシェル構造ナノ粒子が、銀のシェルと、銅、モリブデン、及びニッケルから選択される金属のコアとを含み、
前記コアシェル構造ナノ粒子が、10〜60nmの直径を有し、
前記コアシェル構造ナノ粒子のコア金属に対するシェル金属の重量比が、コア金属90〜10wt%に対してシェル金属10〜90wt%であることを特徴とする方法。 - 前記基板が、高分子基板を含む請求項1に記載の方法。
- 前記材料の適用が、前記材料をプリンティング又はキャスティングすることを含む請求項2に記載の方法。
- 前記材料が、連続層としてプリントされる請求項2に記載の方法。
- 前記材料が、不連続形状のアレイを形成するようにプリントされる請求項2に記載の方法。
- フリップチップ用途の金属粒子の層をコンポーネントに適用するための積層プロセスであって、
高分子基板の上に前記金属粒子の層を含む膜の上に、前記コンポーネントを載置し、アセンブリを形成することと、
前記アセンブリに、50〜200℃の範囲で熱を印加することと、
前記アセンブリに、0.05〜10MPaの範囲で圧力を印加することと、
前記アセンブリから前記コンポーネントを剥離し、前記金属粒子の層を前記コンポーネントの上に残存させ、前記高分子基板から分離させることとを含み、
前記金属粒子が、コアシェル構造ナノ粒子を含み、
前記コアシェル構造ナノ粒子が、銀のシェルと、銅、モリブデン、及びニッケルから選択される金属のコアとを含み、
前記コアシェル構造ナノ粒子が、10〜60nmの直径を有し、
前記コアシェル構造ナノ粒子のコア金属に対するシェル金属の重量比が、コア金属90〜10wt%に対してシェル金属10〜90wt%であることを特徴とする積層プロセス。 - 前記コンポーネントが、フリップチップである請求項6に記載のプロセス。
- 接着のための方法であって、
フリップチップ用途の金属粒子の膜を基板の上に適用することと、
前記膜の上にダイ又はウェハを載置し、アセンブリを形成することと、
前記アセンブリに40MPa未満の圧力を印加することと、
160〜400℃の温度で0.25秒間〜120分間、前記アセンブリを焼結することとを含み、
前記金属粒子が、コアシェル構造ナノ粒子を含み、
前記コアシェル構造ナノ粒子が、銀のシェルと、銅、モリブデン、及びニッケルから選択される金属のコアとを含み、
前記コアシェル構造ナノ粒子が、10〜60nmの直径を有し、
前記コアシェル構造ナノ粒子のコア金属に対するシェル金属の重量比が、コア金属90〜10wt%に対してシェル金属10〜90wt%であることを特徴とする方法。 - ウェハをダイシングすることにより、前記ダイを形成することを更に含む請求項8に記載の方法。
- 前記ダイが、フリップチップを含む請求項9に記載の方法。
- 前記ダイの裏側に金属粒子の膜を適用することを更に含む請求項10に記載の方法。
- 0.5〜20MPaの圧力を印加する請求項8に記載の方法。
- 2.0〜10MPaの圧力を印加する請求項12に記載の方法。
- 2.0〜10MPaの圧力を印加する請求項11に記載の方法。
- 前記温度が、200℃である請求項8に記載の方法。
- 前記基板が、35μm〜75μmの厚みを有する請求項8に記載の方法。
- 前記アセンブリを、300℃の温度で5〜60分間、ポスト処理することを更に含む請求項8に記載の方法。
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US11389865B2 (en) | 2022-07-19 |
KR20190016142A (ko) | 2019-02-15 |
US20170144221A1 (en) | 2017-05-25 |
KR20220106240A (ko) | 2022-07-28 |
JP2022062715A (ja) | 2022-04-20 |
EP3154729A4 (en) | 2018-02-28 |
KR20170013927A (ko) | 2017-02-07 |
EP3154729A1 (en) | 2017-04-19 |
KR102424487B1 (ko) | 2022-07-25 |
JP2024045324A (ja) | 2024-04-02 |
KR20200142123A (ko) | 2020-12-21 |
BR112016029118A2 (pt) | 2017-08-22 |
JP2017525839A (ja) | 2017-09-07 |
CN106660120A (zh) | 2017-05-10 |
WO2015192004A1 (en) | 2015-12-17 |
JP7001659B2 (ja) | 2022-01-19 |
JP7489956B2 (ja) | 2024-05-24 |
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