JP2020027926A - Film forming method and film forming apparatus - Google Patents

Film forming method and film forming apparatus Download PDF

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JP2020027926A
JP2020027926A JP2018153703A JP2018153703A JP2020027926A JP 2020027926 A JP2020027926 A JP 2020027926A JP 2018153703 A JP2018153703 A JP 2018153703A JP 2018153703 A JP2018153703 A JP 2018153703A JP 2020027926 A JP2020027926 A JP 2020027926A
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film
silicon
film forming
gas
substrate
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JP7065728B2 (en
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瑠威 兼村
Rui Kanemura
瑠威 兼村
寛之 林
Hiroyuki Hayashi
寛之 林
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to KR1020190098813A priority patent/KR102455458B1/en
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Abstract

To provide a technique capable of selectively forming a silicon film on the top of a projecting part.SOLUTION: A film forming method to selectively forming a silicon film on the top of each of a plurality of projecting parts 102 that are formed on a substrate 101 includes: a first film forming step of supplying silicon-containing gas on the substrate and forming a silicon film 104 such that the film thickness of an upper part of a side wall of each projecting part is thicker than that of a lower part thereof; an etching step of, after the first film forming step, supplying etching gas on the substrate and removing a silicon film on a side wall of each projecting part while leaving a silicon film on the top of each projecting part; and a second film forming step of, after the etching step, supplying silicon-containing gas on the substrate and forming a silicon film such that the film thickness of an upper part of a side wall of each projecting part is thicker than that of a lower part thereof.SELECTED DRAWING: Figure 3

Description

本開示は、成膜方法及び成膜装置に関する。   The present disclosure relates to a film forming method and a film forming apparatus.

シリコン層上に酸化シリコンと窒化シリコンとを交互に積層して形成した積層膜に、リソグラフィとエッチングによって孔（ホール）を形成し、それをマスクとしてシリコン層にトレンチを形成する方法が知られている（例えば、特許文献１参照）。   A method is known in which a hole is formed by lithography and etching in a laminated film formed by alternately laminating silicon oxide and silicon nitride on a silicon layer, and a trench is formed in the silicon layer using the hole as a mask. (For example, see Patent Document 1).

また、１回のリソグラフィとエッチングによって開けられる孔の深さには限界がある。そのため、限界を超える積層数を有する積層膜に孔を形成する場合、積層膜の形成と孔の形成とが繰り返し行われる。積層膜の形成と孔の形成とを繰り返し行う場合、上層の孔を形成するときのエッチングストッパーとして下層の孔にシリコン膜が埋め込まれる。このとき、孔にシリコン膜が完全に埋め込まれていると、上層の形成後にシリコン膜を除去する際の時間が長くなる。   Further, there is a limit to the depth of a hole formed by one lithography and etching. Therefore, when holes are formed in a stacked film having a number of stacked layers exceeding the limit, formation of the stacked film and formation of the holes are repeatedly performed. When the formation of the laminated film and the formation of the holes are performed repeatedly, the silicon film is buried in the holes in the lower layer as an etching stopper when the holes in the upper layer are formed. At this time, if the silicon film is completely buried in the hole, the time for removing the silicon film after forming the upper layer becomes longer.

特開２０１０−１０３２４２号公報JP 2010-103242 A

本開示は、凸部の上部に選択的にシリコン膜を成膜できる技術を提供する。   The present disclosure provides a technique that can selectively form a silicon film on a protrusion.

本開示の一態様による成膜方法は、基板の上に形成された複数の凸部の上部に選択的にシリコン膜を成膜する成膜方法であって、前記基板にシリコン含有ガスを供給し、前記凸部の側壁の下部よりも上部の膜厚が厚くなるようにシリコン膜を成膜する第１成膜工程と、前記第１成膜工程の後、前記基板にエッチングガスを供給し、前記凸部の上面に前記シリコン膜を残存させると共に前記凸部の側壁の前記シリコン膜を除去するエッチング工程と、前記エッチング工程の後、前記基板にシリコン含有ガスを供給し、前記凸部の側壁の下部よりも上部の膜厚が厚くなるようにシリコン膜を成膜する第２成膜工程と、を有する。   A film forming method according to an embodiment of the present disclosure is a film forming method for selectively forming a silicon film on a plurality of convex portions formed on a substrate, and supplying a silicon-containing gas to the substrate. A first film forming step of forming a silicon film so that a film thickness of the silicon film is higher than a lower part of a side wall of the protrusion, and after the first film forming step, supplying an etching gas to the substrate; An etching step of leaving the silicon film on the upper surface of the convex portion and removing the silicon film on the side wall of the convex portion; after the etching step, supplying a silicon-containing gas to the substrate; A second film-forming step of forming a silicon film so that the film thickness of the upper portion is larger than that of the lower portion.

本開示によれば、凸部の上部に選択的にシリコン膜を成膜できる。   According to the present disclosure, a silicon film can be selectively formed on an upper part of a projection.

成膜装置の構成例を示す概略図Schematic diagram showing a configuration example of a film forming apparatus 図１の成膜装置の処理容器の説明図Explanatory drawing of the processing container of the film forming apparatus of FIG. 第１の実施形態に係る成膜方法を示す工程断面図Process sectional view showing the film forming method according to the first embodiment 第２の実施形態に係る成膜方法を示す工程断面図Process sectional view showing the film forming method according to the second embodiment 第２の実施形態に係る成膜方法の適用例を示す工程断面図Process sectional view showing an application example of the film forming method according to the second embodiment

以下、添付の図面を参照しながら、本開示の限定的でない例示の実施形態について説明する。添付の全図面中、同一又は対応する部材又は部品については、同一又は対応する参照符号を付し、重複する説明を省略する。   Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the attached drawings, the same or corresponding members or parts are denoted by the same or corresponding reference numerals, and redundant description is omitted.

［成膜装置］
本開示の一実施形態に係る成膜方法を実施できる成膜装置について、多数枚の基板に対して一括で熱処理を行うバッチ式の縦型熱処理装置を例に挙げて説明する。但し、成膜装置は、縦型熱処理装置に限定されるものではなく、種々の装置であってよい。例えば、成膜装置は、基板を１枚ずつ処理する枚葉式の装置であってもよい。また、例えば処理容器内の回転テーブルの上に配置した複数枚の基板を回転テーブルにより公転させ、原料ガスが供給される領域と、原料ガスと反応する反応ガスが供給される領域とを順番に通過させて基板上に成膜するセミバッチ式の装置であってもよい。 [Deposition equipment]
A film forming apparatus capable of performing a film forming method according to an embodiment of the present disclosure will be described using a batch type vertical heat treatment apparatus that performs heat treatment on a large number of substrates at once as an example. However, the film forming apparatus is not limited to the vertical heat treatment apparatus, and may be various apparatuses. For example, the film forming apparatus may be a single wafer processing apparatus that processes substrates one by one. Further, for example, a plurality of substrates arranged on a rotary table in a processing container are revolved by a rotary table, and a region where a source gas is supplied and a region where a reaction gas reacting with the source gas is supplied are sequentially arranged. A semi-batch type apparatus for forming a film on a substrate by passing the film may be used.

図１は、成膜装置の構成例を示す概略図である。図２は、図１の成膜装置の処理容器の説明図である。   FIG. 1 is a schematic diagram illustrating a configuration example of a film forming apparatus. FIG. 2 is an explanatory diagram of a processing container of the film forming apparatus of FIG.

図１に示されるように、成膜装置１は、基板である半導体ウエハ（以下「ウエハＷ」という。）を収容する処理容器３４を有する。   As shown in FIG. 1, the film forming apparatus 1 includes a processing container 34 that stores a semiconductor wafer (hereinafter, referred to as “wafer W”) as a substrate.

処理容器３４は、下端が開放された有天井の円筒形状の内管４４と、下端が開放されて内管４４の外側を覆う有天井の円筒形状の外管４６とを有する。内管４４及び外管４６は、石英等の耐熱性材料により形成されており、同軸状に配置されて二重管構造となっている。   The processing container 34 has a cylindrical inner tube 44 having a ceiling with an open lower end, and a cylindrical outer tube 46 with a ceiling open to cover the outside of the inner tube 44. The inner tube 44 and the outer tube 46 are formed of a heat-resistant material such as quartz, and are arranged coaxially to form a double tube structure.

内管４４の天井部は、例えば平坦になっている。内管４４の一側には、その長手方向（上下方向）に沿ってガス供給管を収容するノズル収容部４８が形成されている。例えば図２に示されるように、内管４４の側壁の一部を外側へ向けて突出させて凸部５０を形成し、凸部５０内をノズル収容部４８として形成している。ノズル収容部４８に対向させて内管４４の反対側の側壁には、その長手方向（上下方向）に沿って幅Ｌ１の矩形状の開口５２が形成されている。   The ceiling of the inner tube 44 is flat, for example. On one side of the inner tube 44, a nozzle housing portion 48 for housing a gas supply tube is formed along the longitudinal direction (vertical direction). For example, as shown in FIG. 2, a part of the side wall of the inner tube 44 is protruded outward to form a convex part 50, and the inside of the convex part 50 is formed as a nozzle housing part 48. A rectangular opening 52 having a width L1 is formed in the side wall of the inner tube 44 opposite to the nozzle accommodating portion 48 along the longitudinal direction (vertical direction).

開口５２は、内管４４内のガスを排気できるように形成されたガス排気口である。開口５２の長さは、ウエハボート３８の長さと同じであるか、又は、ウエハボート３８の長さよりも長く上下方向へそれぞれ延びるようにして形成されている。即ち、開口５２の上端は、ウエハボート３８の上端に対応する位置以上の高さに延びて位置され、開口５２の下端は、ウエハボート３８の下端に対応する位置以下の高さに延びて位置されている。   The opening 52 is a gas exhaust port formed so that the gas in the inner pipe 44 can be exhausted. The length of the opening 52 is the same as the length of the wafer boat 38, or is formed so as to extend in the vertical direction longer than the length of the wafer boat 38. That is, the upper end of the opening 52 is positioned to extend to a height higher than the position corresponding to the upper end of the wafer boat 38, and the lower end of the opening 52 is positioned to extend to a height equal to or lower than the position corresponding to the lower end of the wafer boat 38. Have been.

処理容器３４の下端は、例えばステンレス鋼により形成される円筒形状のマニホールド５４によって支持されている。マニホールド５４の上端にはフランジ部５６が形成されており、フランジ部５６上に外管４６の下端を設置して支持するようになっている。フランジ部５６と外管４６との下端との間にはＯリング等のシール部材５８を介在させて外管４６内を気密状態にしている。   The lower end of the processing container 34 is supported by a cylindrical manifold 54 formed of, for example, stainless steel. A flange 56 is formed at the upper end of the manifold 54, and the lower end of the outer tube 46 is installed and supported on the flange 56. A seal member 58 such as an O-ring is interposed between the flange portion 56 and the lower end of the outer tube 46 to make the inside of the outer tube 46 airtight.

マニホールド５４の上部の内壁には、円環状の支持部６０が設けられており、支持部６０上に内管４４の下端を設置してこれを支持するようになっている。マニホールド５４の下端の開口には、蓋体３６がＯリング等のシール部材６２を介して気密に取り付けられており、処理容器３４の下端の開口、即ち、マニホールド５４の開口を気密に塞ぐようになっている。蓋体３６は、例えばステンレス鋼により形成される。   An annular support portion 60 is provided on the inner wall above the manifold 54, and the lower end of the inner tube 44 is installed on the support portion 60 to support it. A lid 36 is hermetically attached to the opening at the lower end of the manifold 54 via a seal member 62 such as an O-ring so that the opening at the lower end of the processing container 34, that is, the opening of the manifold 54 is airtightly closed. Has become. The lid 36 is formed of, for example, stainless steel.

蓋体３６の中央部には、磁性流体シール部６４を介して回転軸６６が貫通させて設けられている。回転軸６６の下部は、ボートエレベータよりなる昇降手段６８のアーム６８Ａに回転自在に支持されている。   A rotating shaft 66 is provided at the center of the lid 36 through a magnetic fluid seal 64. The lower part of the rotating shaft 66 is rotatably supported by an arm 68A of a lifting means 68 composed of a boat elevator.

回転軸６６の上端には回転プレート７０が設けられており、回転プレート７０上に石英製の保温台７２を介してウエハＷを保持するウエハボート３８が載置されるようになっている。従って、昇降手段６８を昇降させることによって蓋体３６とウエハボート３８とは一体として上下動し、ウエハボート３８を処理容器３４内に対して挿脱できるようになっている。ウエハボート３８は、多数枚のウエハＷを所定の間隔で保持する。   A rotating plate 70 is provided at the upper end of the rotating shaft 66, and a wafer boat 38 for holding the wafer W is placed on the rotating plate 70 via a quartz heat retaining table 72. Therefore, the lid 36 and the wafer boat 38 move up and down integrally by moving the lifting means 68 up and down, so that the wafer boat 38 can be inserted into and removed from the processing container 34. The wafer boat 38 holds a large number of wafers W at predetermined intervals.

ガス供給手段４０は、マニホールド５４に設けられており、内管４４内へ成膜ガス、エッチングガス、パージガス等のガスを導入する。ガス供給手段４０は、複数（例えば３本）の石英製のガス供給管７６、７８、８０を有している。各ガス供給管７６、７８、８０は、内管４４内にその長手方向に沿って設けられると共に、その基端がＬ字状に屈曲されてマニホールド５４を貫通するようにして支持されている。   The gas supply means 40 is provided in the manifold 54 and introduces a gas such as a film forming gas, an etching gas, and a purge gas into the inner pipe 44. The gas supply means 40 has a plurality (for example, three) of gas supply pipes 76, 78, and 80 made of quartz. Each of the gas supply pipes 76, 78, and 80 is provided in the inner pipe 44 along the longitudinal direction thereof, and is supported such that a base end thereof is bent in an L shape and penetrates the manifold 54.

ガス供給管７６、７８、８０は、図２に示されるように、内管４４のノズル収容部４８内に周方向に沿って一列になるように設置されている。各ガス供給管７６、７８、８０には、その長手方向に沿って所定の間隔で複数のガス孔７６Ａ、７８Ａ、８０Ａが形成されており、各ガス孔７６Ａ、７８Ａ、８０Ａより水平方向に向けて各ガスを放出できるようになっている。所定の間隔は、例えばウエハボート３８に支持されるウエハＷの間隔と同じになるように設定される。また、高さ方向の位置は、各ガス孔７６Ａ、７８Ａ、８０Ａが上下方向に隣り合うウエハＷ間の中間に位置するように設定されており、各ガスをウエハＷ間の空間部に効率的に供給できるようになっている。一実施形態では、ガス供給管７６は成膜ガスを供給する成膜ガス供給部を構成し、ガス供給管７８はエッチングガスを供給するエッチングガス供給部を構成し、ガス供給管８０はパージガスを供給するパージガス供給部を構成する。成膜ガス、エッチングガス、及びパージガスは、流量が制御されて必要に応じて処理容器３４内に供給される。   As shown in FIG. 2, the gas supply pipes 76, 78, and 80 are installed in the nozzle accommodating portion 48 of the inner pipe 44 so as to be aligned in a circumferential direction. A plurality of gas holes 76A, 78A, 80A are formed in the gas supply pipes 76, 78, 80 at predetermined intervals along the longitudinal direction, and the gas holes 76A, 78A, 80A are directed horizontally from the gas holes 76A, 78A, 80A. Each gas can be released. The predetermined interval is set to be the same as the interval between the wafers W supported by the wafer boat 38, for example. Further, the position in the height direction is set such that each gas hole 76A, 78A, 80A is located at an intermediate position between the vertically adjacent wafers W, and each gas is efficiently placed in the space between the wafers W. Can be supplied. In one embodiment, the gas supply pipe 76 constitutes a film formation gas supply unit for supplying a film formation gas, the gas supply tube 78 constitutes an etching gas supply unit for supplying an etching gas, and the gas supply tube 80 supplies a purge gas. A purge gas supply unit is configured to be supplied. The flow rates of the film forming gas, the etching gas, and the purge gas are controlled and supplied into the processing container 34 as needed.

マニホールド５４の上部の側壁であって、支持部６０の上方には、ガス出口８２が形成されており、内管４４と外管４６との間の空間部８４を介して開口５２より排出される内管４４内のガスを排気できるようになっている。ガス出口８２には、排気手段４１が設けられる。排気手段４１は、ガス出口８２に接続された排気通路８６を有しており、排気通路８６には、圧力調整弁８８及び真空ポンプ９０が順次介設されて、処理容器３４内を真空引きできるようになっている。   A gas outlet 82 is formed on the upper side wall of the manifold 54 and above the support portion 60, and is discharged from the opening 52 through a space 84 between the inner pipe 44 and the outer pipe 46. The gas in the inner pipe 44 can be exhausted. The gas outlet 82 is provided with an exhaust unit 41. The exhaust unit 41 has an exhaust passage 86 connected to a gas outlet 82. In the exhaust passage 86, a pressure regulating valve 88 and a vacuum pump 90 are sequentially provided so that the inside of the processing chamber 34 can be evacuated. It has become.

外管４６の外周側には、外管４６を覆うように円筒形状の加熱手段４２が設けられている。加熱手段４２は、処理容器３４内に収容されるウエハＷを加熱する。   A cylindrical heating means 42 is provided on the outer peripheral side of the outer tube 46 so as to cover the outer tube 46. The heating unit 42 heats the wafer W accommodated in the processing container 34.

成膜装置１の各部の動作は、例えばコンピュータ等の制御部９５により制御される。また、成膜装置１の各部の動作を行うコンピュータのプログラムは、記憶媒体９６に記憶されている。記憶媒体９６は、例えばフレキシブルディスク、コンパクトディスク、ハードディスク、フラッシュメモリ、ＤＶＤ等であってよい。   The operation of each unit of the film forming apparatus 1 is controlled by a control unit 95 such as a computer. In addition, a computer program for performing operations of each unit of the film forming apparatus 1 is stored in the storage medium 96. The storage medium 96 may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

［成膜方法］
（第１の実施形態）
第１の実施形態に係る成膜方法について、上記の成膜装置１により、基板の上に形成された複数の凸部の上面に選択的にアモルファスシリコン膜（以下「シリコン膜」という。）を成膜する場合を例に挙げて説明する。以下の成膜方法は、制御部９５が成膜装置１の各部の動作を制御することにより実行される。図３は、第１の実施形態に係る成膜方法を示す工程断面図である。 [Film formation method]
(First embodiment)
In the film forming method according to the first embodiment, the above-described film forming apparatus 1 selectively forms an amorphous silicon film (hereinafter, referred to as a “silicon film”) on an upper surface of a plurality of protrusions formed on a substrate. The case of forming a film will be described as an example. The following film forming method is executed by the control unit 95 controlling the operation of each unit of the film forming apparatus 1. FIG. 3 is a process cross-sectional view illustrating the film forming method according to the first embodiment.

最初に、図３（ａ）に示されるように、表面に複数の凸部１０２が形成された基板１０１を準備する（準備工程）。基板１０１は、例えばシリコンウエハ等の半導体ウエハであってよい。基板１０１の上面には、例えば表面酸化膜１０３が形成されている。凸部１０２は、例えば単層膜であってもよく、積層膜であってもよい。積層膜は、組成の異なるシリコン含有膜を積層した膜であってよい。積層膜としては、例えば酸化シリコン（ＳｉＯ２）と窒化シリコン（ＳｉＮ）とが交互に積層されたＯＮＯＮ積層構造、酸化シリコン（ＳｉＯ２）とポリシリコンとが交互に積層されたＯＰＯＰ積層構造が挙げられる。 First, as shown in FIG. 3A, a substrate 101 having a plurality of convex portions 102 formed on its surface is prepared (preparation step). The substrate 101 may be, for example, a semiconductor wafer such as a silicon wafer. On the upper surface of the substrate 101, for example, a surface oxide film 103 is formed. The protrusion 102 may be, for example, a single-layer film or a laminated film. The laminated film may be a film in which silicon-containing films having different compositions are laminated. Examples of the laminated film include an ONON laminated structure in which silicon oxide (SiO 2 ) and silicon nitride (SiN) are alternately laminated, and an OPOP laminated structure in which silicon oxide (SiO 2 ) and polysilicon are alternately laminated. Can be

続いて、処理容器３４内に基板１０１を搬入する（搬入工程）。一実施形態では、まず、昇降手段６８により多数枚の基板１０１を保持したウエハボート３８を、処理容器３４内に搬入し、蓋体３６により処理容器３４の下端の開口部を気密に塞ぎ密閉する。続いて、排気手段４１により処理容器３４の内部の圧力が所定の圧力となるように真空引きを行い、加熱手段４２により基板１０１を加熱する。   Subsequently, the substrate 101 is loaded into the processing container 34 (loading step). In one embodiment, first, the wafer boat 38 holding a large number of substrates 101 is carried into the processing container 34 by the elevating means 68, and the opening at the lower end of the processing container 34 is hermetically closed and closed by the lid 36. . Subsequently, the evacuation unit 41 evacuates the inside of the processing container 34 to a predetermined pressure, and the heating unit 42 heats the substrate 101.

続いて、ウエハボート３８を回転させながら、処理容器３４内にガス供給管７６からシリコン含有ガスを供給する。これにより、図３（ｂ）に示されるように、凸部１０２の側壁１０２ｓの下部よりも上部の膜厚が厚くなるようにシリコン膜１０４を成膜する（第１成膜工程）。第１成膜工程では、隣接する凸部１０２により形成される開口１０２ａが閉塞しないようにシリコン膜１０４を成膜することが好ましい。これにより、後のエッチング工程において、コンフォーマルにエッチングを行うためにエッチングガスを開口１０２ａの底部まで行き届かせることができる。シリコン含有ガスは、凸部１０２の側壁１０２ｓの下部よりも上部の膜厚が厚くなるようにシリコン膜１０４を成膜できるガスであればよく、例えば分子式中に珪素（Ｓｉ）を２つ以上含む高次シラン系ガスであってよい。高次シラン系ガスとしては、例えばジシラン（Ｓｉ２Ｈ６）ガス、トリシラン（Ｓｉ３Ｈ８）ガス、テトラシラン（Ｓｉ４Ｈ１０）ガスが挙げられる。 Subsequently, a silicon-containing gas is supplied from the gas supply pipe 76 into the processing container 34 while rotating the wafer boat 38. As a result, as shown in FIG. 3B, the silicon film 104 is formed so that the film thickness of the silicon film 104 is larger than that of the lower part of the side wall 102s of the convex part 102 (first film forming step). In the first film formation step, it is preferable to form the silicon film 104 so that the opening 102a formed by the adjacent protrusion 102 is not closed. Thus, in the subsequent etching step, the etching gas can reach the bottom of the opening 102a in order to perform the etching in a conformal manner. The silicon-containing gas may be any gas that can form the silicon film 104 so that the film thickness of the silicon film 104 is thicker than the lower portion of the side wall 102s of the protrusion 102, and includes, for example, two or more silicon (Si) in the molecular formula. Higher silane-based gas may be used. Examples of the higher silane-based gas include disilane (Si 2 H 6 ) gas, trisilane (Si 3 H 8 ) gas, and tetrasilane (Si 4 H 10 ) gas.

続いて、ウエハボート３８を回転させながら、処理容器３４内にガス供給管７８からエッチングガスを供給する。これにより、図３（ｃ）に示されるように、凸部１０２の上面１０２ｔにシリコン膜１０４を残存させると共に凸部１０２の側壁１０２ｓのシリコン膜１０４を除去する（エッチング工程）。このとき、シリコン膜１０４が除去されて露出した凸部１０２の側壁１０２ｓ及び表面酸化膜１０３の上面には、エッチングガスに含まれるハロゲン１０５が吸着する。エッチングガスは、凸部１０２の上面１０２ｔにシリコン膜１０４を残存させると共に凸部１０２の側壁１０２ｓのシリコン膜１０４を除去できるガスであればよく、例えば臭素含有ガス、ヨウ素含有ガスであってよい。臭素含有ガス又はヨウ素含有ガスを用いると、シリコン膜１０４をコンフォーマルにエッチングできる。これにより、相対的に膜厚が厚く成膜された凸部１０２の上面１０２ｔのシリコン膜１０４を残存させると共に、相対的に膜厚が薄く成膜された凸部１０２の側壁１０２ｓのシリコン膜１０４を除去できる。臭素含有ガスとしては、例えば臭化水素（ＨＢｒ）ガス又は臭素（Ｂｒ２）ガスが挙げられる。ヨウ素含有ガスとしては、例えばヨウ化水素（ＨＩ）ガス又はヨウ素（Ｉ２）ガスが挙げられる。 Subsequently, the etching gas is supplied into the processing container 34 from the gas supply pipe 78 while rotating the wafer boat 38. Thus, as shown in FIG. 3C, the silicon film 104 is left on the upper surface 102t of the convex portion 102, and the silicon film 104 on the side wall 102s of the convex portion 102 is removed (etching step). At this time, the halogens 105 contained in the etching gas are adsorbed on the side walls 102 s of the projections 102 exposed by removing the silicon film 104 and the upper surface of the surface oxide film 103. The etching gas may be any gas that can leave the silicon film 104 on the upper surface 102t of the protrusion 102 and remove the silicon film 104 on the side wall 102s of the protrusion 102, such as a bromine-containing gas or an iodine-containing gas. When a bromine-containing gas or an iodine-containing gas is used, the silicon film 104 can be conformally etched. As a result, the silicon film 104 on the upper surface 102t of the convex portion 102 having a relatively large thickness is left, and the silicon film 104 on the side wall 102s of the convex portion 102 having a relatively small thickness is formed. Can be removed. Examples of the bromine-containing gas include a hydrogen bromide (HBr) gas and a bromine (Br 2 ) gas. Examples of the iodine-containing gas include a hydrogen iodide (HI) gas and an iodine (I 2 ) gas.

続いて、ウエハボート３８を回転させながら、処理容器３４内にガス供給管７６からシリコン含有ガスを供給する。これにより、図３（ｄ）に示されるように、凸部１０２の上面１０２ｔにシリコン膜１０４を成膜する（第２成膜工程）。第２成膜工程では、凸部１０２の側壁１０２ｓ及び表面酸化膜１０３の上面に吸着したハロゲン１０５により、凸部１０２の側壁１０２ｓ及び表面酸化膜１０３の上面にはシリコン膜１０４が成膜されにくい。これにより、凸部１０２の上面１０２ｔに残存したシリコン膜１０４表面へのシリコン膜１０４の成膜の進行が速いため、凸部１０２の上面１０２ｔに選択的にシリコン膜１０４が成膜される。第２成膜工程では、例えば隣接する凸部１０２により形成される開口１０２ａが閉塞しないようにシリコン膜１０４を成膜する。また、第２成膜工程では、例えば凸部１０２の側壁１０２ｓ及び表面酸化膜１０３の上面に膜形成が開始されるまでシリコン含有ガスの供給を継続する。なお、膜形成が開始されるとは、シリコンの核１０４ａが発生した時点であって、核成長が開始される前の時点を意味する。シリコン含有ガスは、例えば第１成膜工程と同様のガスであってよい。また、シリコン含有ガスは、第１成膜工程と異なるガスであってもよく、例えば、モノシラン（ＳｉＨ４）ガスが挙げられる。 Subsequently, a silicon-containing gas is supplied from the gas supply pipe 76 into the processing container 34 while rotating the wafer boat 38. Thereby, as shown in FIG. 3D, the silicon film 104 is formed on the upper surface 102t of the convex portion 102 (second film forming step). In the second film forming step, the silicon film 104 is hardly formed on the side wall 102s of the convex portion 102 and the upper surface of the surface oxide film 103 due to the halogen 105 adsorbed on the side wall 102s of the convex portion 102 and the upper surface of the surface oxide film 103. . Thus, the progress of the formation of the silicon film 104 on the surface of the silicon film 104 remaining on the upper surface 102t of the convex portion 102 is fast, so that the silicon film 104 is selectively formed on the upper surface 102t of the convex portion 102. In the second film forming step, for example, the silicon film 104 is formed so that the opening 102a formed by the adjacent convex portion 102 is not closed. Further, in the second film forming step, the supply of the silicon-containing gas is continued until the film formation is started on, for example, the side wall 102s of the convex portion 102 and the upper surface of the surface oxide film 103. The start of film formation means a point in time when the silicon nucleus 104a is generated and before the nucleus growth is started. The silicon-containing gas may be, for example, the same gas as in the first film forming step. Further, the silicon-containing gas may be a gas different from that used in the first film forming step, for example, a monosilane (SiH 4 ) gas.

続いて、エッチング工程及び第２成膜工程を交互に所定の回数繰り返し、凸部１０２の上面１０２ｔに所定の膜厚のシリコン膜１０４を成膜する。一実施形態では、エッチング工程（図３（ｅ）参照）、第２成膜工程（図３（ｆ）参照）、及びエッチング工程（図３（ｇ）参照）をこの順番に行う。   Subsequently, the etching step and the second film forming step are alternately repeated a predetermined number of times, and a silicon film 104 having a predetermined thickness is formed on the upper surface 102t of the projection 102. In one embodiment, an etching step (see FIG. 3E), a second film forming step (see FIG. 3F), and an etching step (see FIG. 3G) are performed in this order.

以上により、基板１０１の上に形成された複数の凸部１０２の上面１０２ｔに選択的にシリコン膜１０４を成膜できる。   As described above, the silicon film 104 can be selectively formed on the upper surface 102t of the plurality of protrusions 102 formed on the substrate 101.

なお、第１成膜工程の前に、ウエハボート３８を回転させながら、処理容器３４内にガス供給管７６からアミノシラン系ガスを供給し、凸部１０２にシード層を形成するシード層形成工程を行ってもよい。第１成膜工程の前にシード層形成工程を行うことで、凸部１０２の表面に形成されるシリコン膜１０４の表面粗さを小さくできる。アミノシラン系ガスとしては、例えばＤＩＰＡＳ（ジイソプロピルアミノシラン）、３ＤＭＡＳ（トリスジメチルアミノシラン）、ＢＴＢＡＳ（ビスターシャルブチルアミノシラン）を利用できる。   Before the first film forming step, a seed layer forming step of supplying an aminosilane-based gas from the gas supply pipe 76 into the processing container 34 while rotating the wafer boat 38 to form a seed layer on the convex portions 102 is performed. May go. By performing the seed layer forming step before the first film forming step, the surface roughness of the silicon film 104 formed on the surface of the projection 102 can be reduced. As the aminosilane-based gas, for example, DIPAS (diisopropylaminosilane), 3DMAS (trisdimethylaminosilane), and BTBAS (bicester butylaminosilane) can be used.

（第２の実施形態）
第２の実施形態に係る成膜方法について説明する。第２の実施形態に係る成膜方法は、基板の上に形成された複数の凸部の上部（上面及び側壁の上部）に選択的にシリコン膜を成膜し、隣接する凸部により形成される開口を塞ぐ方法である。以下の成膜方法は、制御部９５が成膜装置１の各部の動作を制御することにより実行される。図４は、第２の実施形態に係る成膜方法を示す工程断面図である。 (Second embodiment)
A film forming method according to the second embodiment will be described. In the film forming method according to the second embodiment, a silicon film is selectively formed on a plurality of protrusions formed on a substrate (upper surfaces and upper portions of side walls) and formed by adjacent protrusions. This is a method of closing the opening. The following film forming method is executed by the control unit 95 controlling the operation of each unit of the film forming apparatus 1. FIG. 4 is a process cross-sectional view illustrating a film forming method according to the second embodiment.

最初に、図４（ａ）に示されるように、表面に複数の凸部１０２が形成された基板１０１を準備する（準備工程）。準備工程は、第１の実施形態と同様であってよい。   First, as shown in FIG. 4A, a substrate 101 having a plurality of convex portions 102 formed on its surface is prepared (preparation step). The preparation process may be the same as in the first embodiment.

続いて、処理容器３４内に基板１０１を搬入する（搬入工程）。搬入工程は、第１の実施形態と同様であってよい。   Subsequently, the substrate 101 is loaded into the processing container 34 (loading step). The loading step may be the same as in the first embodiment.

続いて、ウエハボート３８を回転させながら、処理容器３４内にガス供給管７６からシリコン含有ガスを供給する。これにより、図４（ｂ）に示されるように、凸部１０２の側壁１０２ｓの下部よりも上部の膜厚が厚くなるようにシリコン膜１０４を成膜する（第１成膜工程）。第１成膜工程は、第１の実施形態と同様であってよい。   Subsequently, a silicon-containing gas is supplied from the gas supply pipe 76 into the processing container 34 while rotating the wafer boat 38. As a result, as shown in FIG. 4B, the silicon film 104 is formed so that the film thickness of the silicon film 104 is larger than that of the lower part of the side wall 102s of the convex part 102 (first film forming step). The first film forming step may be the same as in the first embodiment.

続いて、ウエハボート３８を回転させながら、処理容器３４内にガス供給管７８からエッチングガスを供給する。これにより、図４（ｃ）に示されるように、凸部１０２の上面１０２ｔにシリコン膜１０４を残存させると共に凸部１０２の側壁１０２ｓのシリコン膜１０４を除去する（エッチング工程）。エッチング工程は、第１の実施形態と同様であってよい。   Subsequently, the etching gas is supplied into the processing container 34 from the gas supply pipe 78 while rotating the wafer boat 38. Thus, as shown in FIG. 4C, the silicon film 104 is left on the upper surface 102t of the convex portion 102, and the silicon film 104 on the side wall 102s of the convex portion 102 is removed (etching step). The etching process may be the same as in the first embodiment.

続いて、ウエハボート３８を回転させながら、処理容器３４内にガス供給管７６からシリコン含有ガスを供給する。これにより、図４（ｄ）に示されるように、凸部１０２の側壁１０２ｓの下部よりも上部の膜厚が厚くなるようにシリコン膜１０４を成膜する（第２成膜工程）。第２成膜工程では、凸部１０２の側壁１０２ｓ及び表面酸化膜１０３の上面に吸着したハロゲンにより、凸部１０２の側壁１０２ｓ及び表面酸化膜１０３の上面にはシリコン膜１０４が成膜されにくい。これにより、凸部１０２の上面１０２ｔに残存したシリコン膜１０４表面へのシリコン膜１０４の成膜の進行が速いため、凸部１０２の上面１０２ｔに選択的にシリコン膜１０４が成膜される。第２成膜工程では、隣接する凸部１０２により形成される開口１０２ａが閉塞するようにシリコン膜１０４を成膜する。これにより、凸部１０２の上面１０２ｔ及び側壁１０２ｓの上部に選択的にシリコン膜が成膜され、隣接する凸部１０２間には空洞１０２ｖが形成される。シリコン含有ガスは、例えば第１成膜工程と同様のガスであってよい。また、シリコン含有ガスは、第１成膜工程と異なるガスであってもよく、例えば、モノシラン（ＳｉＨ４）ガスが挙げられる。 Subsequently, a silicon-containing gas is supplied from the gas supply pipe 76 into the processing container 34 while rotating the wafer boat 38. As a result, as shown in FIG. 4D, the silicon film 104 is formed so that the film thickness above the lower portion of the side wall 102s of the convex portion 102 is larger than that under the sidewall 102s (second film forming step). In the second film forming step, the silicon film 104 is hardly formed on the side wall 102s of the convex portion 102 and the upper surface of the surface oxide film 103 due to the halogen adsorbed on the side wall 102s of the convex portion 102 and the upper surface of the surface oxide film 103. Thus, the progress of the formation of the silicon film 104 on the surface of the silicon film 104 remaining on the upper surface 102t of the convex portion 102 is fast, so that the silicon film 104 is selectively formed on the upper surface 102t of the convex portion 102. In the second film formation step, the silicon film 104 is formed so as to close the opening 102a formed by the adjacent protrusion 102. As a result, a silicon film is selectively formed on the upper surface 102t of the convex portion 102 and the upper portion of the side wall 102s, and a cavity 102v is formed between the adjacent convex portions 102. The silicon-containing gas may be, for example, the same gas as in the first film forming step. Further, the silicon-containing gas may be a gas different from that used in the first film forming step, for example, a monosilane (SiH 4 ) gas.

以上により、凸部１０２の上面１０２ｔ及び側壁１０２ｓの上部に選択的にシリコン膜を成膜できる。   As described above, a silicon film can be selectively formed on the upper surface 102t of the convex portion 102 and the upper portion of the side wall 102s.

次に、第２の実施形態に係る成膜方法の適用例について説明する。以下では、酸化シリコンと窒化シリコンとが交互に積層されたＯＮＯＮ積層構造に、リソグラフィとエッチングによって孔（ホール）を形成する方法を説明する。   Next, an application example of the film forming method according to the second embodiment will be described. Hereinafter, a method of forming holes by lithography and etching in an ONON stacked structure in which silicon oxide and silicon nitride are alternately stacked will be described.

従来、酸化シリコンと窒化シリコンとが交互に積層されたＯＮＯＮ積層構造に孔を形成する場合、所望の積層数を有する積層膜を成膜した後、リソグラフィとエッチングによって全ての層を貫く孔を一気に形成していた。   Conventionally, when holes are formed in an ONON stacked structure in which silicon oxide and silicon nitride are alternately stacked, after forming a stacked film having a desired number of stacked layers, the holes penetrating all the layers by lithography and etching at once. Had formed.

しかしながら、１回のリソグラフィとエッチングによって開けられる孔の深さには限界があるため、限界を超える積層数を有する積層膜に孔を形成する場合、積層膜の形成と孔の形成とを繰り返し行っている。積層膜の形成と孔の形成とを繰り返し行う場合、上層の孔を形成するときのエッチングストッパーとして下層の孔にシリコン膜が埋め込まれる。しかし、孔にシリコン膜が完全に埋め込まれていると、上層を形成した後にシリコン膜を除去することが困難である。   However, since there is a limit to the depth of a hole formed by one lithography and etching, when forming a hole in a stacked film having a number of layers exceeding the limit, the formation of the stacked film and the formation of the hole are repeatedly performed. ing. When the formation of the laminated film and the formation of the holes are performed repeatedly, the silicon film is buried in the holes in the lower layer as an etching stopper when the holes in the upper layer are formed. However, if the silicon film is completely buried in the hole, it is difficult to remove the silicon film after forming the upper layer.

そこで、第２の実施形態に係る成膜方法により、上記エッチングストッパーとして、孔の内部に空洞が形成されるようにシリコン膜を成膜する。これにより、上層を形成した後にシリコン膜を容易に除去できる。   Therefore, a silicon film is formed as the etching stopper by the film forming method according to the second embodiment so that a cavity is formed inside the hole. Thus, the silicon film can be easily removed after forming the upper layer.

以下、図５を参照して具体的に説明する。図５は、第２の実施形態に係る成膜方法の適用例を示す工程断面図である。   Hereinafter, a specific description will be given with reference to FIG. FIG. 5 is a process cross-sectional view showing an application example of the film forming method according to the second embodiment.

最初に、図５（ａ）に示されるように、酸化シリコン５１１と窒化シリコン５１２とを交互に積層してＯＮＯＮ積層構造（以下「下層５１０」という。）を形成し、次いで、フォトリソグラフィとエッチングにより下層５１０を貫通する孔５１３を形成する。   First, as shown in FIG. 5A, a silicon oxide 511 and a silicon nitride 512 are alternately laminated to form an ONON laminated structure (hereinafter, referred to as “lower layer 510”), and then photolithography and etching are performed. A hole 513 penetrating through the lower layer 510 is formed.

続いて、第２の実施形態に係る成膜方法により、図５（ｂ）に示されるように、下層５１０の上部（下層５１０の上面及び孔５１３の上部）に選択的にエッチングストッパーとしてシリコン膜５１４を成膜し、孔５１３を塞ぐ。このとき、孔５１３の内部に空洞５１３ｖが形成される。   Subsequently, as shown in FIG. 5B, the silicon film is selectively formed on the lower layer 510 (the upper surface of the lower layer 510 and the upper part of the hole 513) by the film forming method according to the second embodiment as an etching stopper. 514 is formed, and the hole 513 is closed. At this time, a cavity 513v is formed inside the hole 513.

続いて、図５（ｃ）に示されるように、下層５１０の上面に成膜されたシリコン膜５１４をエッチングにより除去する。   Subsequently, as shown in FIG. 5C, the silicon film 514 formed on the upper surface of the lower layer 510 is removed by etching.

続いて、図５（ｄ）に示されるように、下層５１０の上に酸化シリコン５２１と窒化シリコン５２２とを交互に積層してＯＮＯＮ積層構造（以下「上層５２０」という。）を形成する。   Subsequently, as shown in FIG. 5D, an ONON stacked structure (hereinafter referred to as “upper layer 520”) is formed by alternately stacking silicon oxide 521 and silicon nitride 522 on the lower layer 510.

続いて、図５（ｅ）に示されるように、フォトリソグラフィとエッチングにより、上層５２０を貫通する孔５２３を形成する。   Subsequently, as shown in FIG. 5E, a hole 523 penetrating the upper layer 520 is formed by photolithography and etching.

続いて、図５（ｆ）に示されるように、例えばウエットエッチングにより、下層５１０の孔５１３に形成されたシリコン膜５１４を除去する。これにより、所望の積層数を有するＯＮＯＮ積層構造に、該ＯＮＯＮ積層構造を貫通する孔５１３、５２３を形成できる。このとき、下層５１０の孔５１３にはシリコン膜５１４が完全に埋め込まれておらず、孔５１３の内部に空洞５１３ｖが形成されているので、シリコン膜５１４を短時間で除去できる。また、孔５１３、５２３側面の膜表面がエッチャントに晒される時間が短くなるので、膜表面へのダメージ発生を抑制できる。   Subsequently, as shown in FIG. 5F, the silicon film 514 formed in the hole 513 of the lower layer 510 is removed by, for example, wet etching. Thereby, holes 513 and 523 penetrating the ONON multilayer structure can be formed in the ONON multilayer structure having a desired number of layers. At this time, since the silicon film 514 is not completely buried in the hole 513 of the lower layer 510 and the cavity 513v is formed inside the hole 513, the silicon film 514 can be removed in a short time. In addition, since the time during which the film surface on the side surfaces of the holes 513 and 523 is exposed to the etchant is shortened, the occurrence of damage to the film surface can be suppressed.

今回開示された実施形態はすべての点で例示であって制限的なものではないと考えられるべきである。上記の実施形態は、添付の請求の範囲及びその趣旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。   The embodiments disclosed this time are to be considered in all respects as illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various forms without departing from the scope and spirit of the appended claims.

上記の実施形態では、基板が半導体ウエハである場合を例に挙げて説明したが、これに限定されない。例えば、基板はフラットパネルディスプレイ（ＦＰＤ：Flat Panel Display)用の大型基板、ＥＬ素子又は太陽電池用の基板であってもよい。   In the above embodiment, the case where the substrate is a semiconductor wafer has been described as an example, but the present invention is not limited to this. For example, the substrate may be a large-sized substrate for a flat panel display (FPD), a substrate for an EL element or a solar cell.

３４ 処理容器
７６ ガス供給管
７８ ガス供給管
９５ 制御部
１０１ 基板
１０２ 凸部
１０２ａ 開口
１０２ｔ 上面
１０２ｓ 側壁
１０４ シリコン膜 34 Processing container 76 Gas supply pipe 78 Gas supply pipe 95 Control unit 101 Substrate 102 Convex part 102a Opening 102t Upper surface 102s Side wall 104 Silicon film

Claims (13)

基板の上に形成された複数の凸部の上部に選択的にシリコン膜を成膜する成膜方法であって、
前記基板にシリコン含有ガスを供給し、前記凸部の側壁の下部よりも上部の膜厚が厚くなるようにシリコン膜を成膜する第１成膜工程と、
前記第１成膜工程の後、前記基板にエッチングガスを供給し、前記凸部の上面に前記シリコン膜を残存させると共に前記凸部の側壁の前記シリコン膜を除去するエッチング工程と、
前記エッチング工程の後、前記基板にシリコン含有ガスを供給し、前記凸部の側壁の下部よりも上部の膜厚が厚くなるようにシリコン膜を成膜する第２成膜工程と、
を有する、
成膜方法。 A film forming method for selectively forming a silicon film on a plurality of protrusions formed on a substrate,
A first film forming step of supplying a silicon-containing gas to the substrate, and forming a silicon film so that a film thickness of the silicon film is greater than a lower portion of a side wall of the protrusion;
After the first film forming step, an etching step of supplying an etching gas to the substrate, leaving the silicon film on the upper surface of the protrusion, and removing the silicon film on the side wall of the protrusion,
After the etching step, a silicon-containing gas is supplied to the substrate, and a second film forming step of forming a silicon film so that a film thickness is higher than a lower part of a side wall of the convex part,
Having,
Film formation method. 前記エッチング工程では、前記シリコン膜をコンフォーマルにエッチングする、
請求項１に記載の成膜方法。 In the etching step, the silicon film is conformally etched.
The film forming method according to claim 1. 前記第１成膜工程では、隣接する前記凸部により形成される開口が閉塞しないように前記シリコン膜を成膜する、
請求項１又は２に記載の成膜方法。 In the first film forming step, the silicon film is formed so that an opening formed by the adjacent protrusion is not closed.
The film forming method according to claim 1. 前記第２成膜工程では、隣接する前記凸部により形成される開口が閉塞しないように前記シリコン膜を成膜する、
請求項１乃至３のいずれか一項に記載の成膜方法。 In the second film forming step, the silicon film is formed so that an opening formed by the adjacent protrusion is not closed.
The film forming method according to claim 1. 前記第１成膜工程を１回行った後、
前記エッチング工程及び前記第２成膜工程を交互に所定の回数繰り返し、前記凸部の上面に所定の膜厚のシリコン膜を成膜する、
請求項１乃至４のいずれか一項に記載の成膜方法。 After performing the first film forming step once,
The etching step and the second film forming step are alternately repeated a predetermined number of times, and a silicon film having a predetermined thickness is formed on the upper surface of the projection.
The film forming method according to claim 1. 前記第２成膜工程では、隣接する前記凸部により形成される開口が閉塞するように前記シリコン膜を成膜する、
請求項１乃至３のいずれか一項に記載の成膜方法。 In the second film forming step, the silicon film is formed such that an opening formed by the adjacent protrusion is closed.
The film forming method according to claim 1. 前記第１成膜工程の前に、前記基板にアミノシラン系ガスを供給し、前記凸部にシード層を形成するシード層形成工程を更に有する、
請求項１乃至６のいずれか一項に記載の成膜方法。 Before the first film forming step, the method further includes a seed layer forming step of supplying an aminosilane-based gas to the substrate and forming a seed layer on the protrusion.
The film forming method according to claim 1. 前記第１成膜工程における前記シリコン含有ガスは、分子式中に珪素を２つ以上含む高次シラン系ガスである、
請求項１乃至７のいずれか一項に記載の成膜方法。 The silicon-containing gas in the first film forming step is a higher silane-based gas containing two or more silicon atoms in a molecular formula.
The film forming method according to claim 1. 前記高次シラン系ガスは、ジシランガスである、
請求項８に記載の成膜方法。 The higher order silane-based gas is a disilane gas,
The film forming method according to claim 8. 前記エッチングガスは、臭素含有ガス又はヨウ素含有ガスである、
請求項１乃至９のいずれか一項に記載の成膜方法。 The etching gas is a bromine-containing gas or an iodine-containing gas,
The film forming method according to claim 1. 前記臭素含有ガスは、ＨＢｒガス又はＢｒ２ガスであり、
前記ヨウ素含有ガスは、ＨＩガス又はＩ２ガスである、
請求項１０に記載の成膜方法。 The bromine-containing gas is HBr gas or Br 2 gas,
The iodine-containing gas is HI gas or I 2 gas,
The film forming method according to claim 10. 前記凸部は、組成の異なるシリコン含有膜を積層した積層膜である、
請求項１乃至１１のいずれか一項に記載の成膜方法。 The protrusion is a laminated film in which silicon-containing films having different compositions are laminated,
The film forming method according to claim 1. 基板の上に形成された複数の凸部の上部に選択的にシリコン膜を成膜する装置であって、
前記基板を収容する処理容器と、
前記処理容器内にシリコン含有ガスを供給する成膜ガス供給部と、
前記処理容器内にエッチングガスを供給するエッチングガス供給部と、
制御部と、
を備え、
前記制御部は、
前記基板にシリコン含有ガスを供給し、前記凸部の側壁の下部よりも上部の膜厚が厚くなるようにシリコン膜を成膜する第１成膜工程と、
前記第１成膜工程の後、前記基板にエッチングガスを供給し、前記凸部の上面に前記シリコン膜を残存させると共に前記凸部の側壁の前記シリコン膜を除去するエッチング工程と、
前記エッチング工程の後、前記基板にシリコン含有ガスを供給し、前記凸部の側壁の下部よりも上部の膜厚が厚くなるようにシリコン膜を成膜する第２成膜工程と、
を実行する、
成膜装置。 An apparatus for selectively forming a silicon film on a plurality of protrusions formed on a substrate,
A processing container for housing the substrate,
A film forming gas supply unit for supplying a silicon-containing gas into the processing container,
An etching gas supply unit that supplies an etching gas into the processing container,
A control unit;
With
The control unit includes:
A first film forming step of supplying a silicon-containing gas to the substrate, and forming a silicon film so that a film thickness of the silicon film is greater than a lower portion of a side wall of the protrusion;
After the first film forming step, an etching step of supplying an etching gas to the substrate, leaving the silicon film on the upper surface of the protrusion, and removing the silicon film on the side wall of the protrusion,
After the etching step, a silicon-containing gas is supplied to the substrate, and a second film forming step of forming a silicon film so that a film thickness is higher than a lower part of a side wall of the convex part,
Run,
Film forming equipment.
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